vanel jean-charles llr / in2p3 nikhef 1-4 april 2003 nikhef 1-4 april 2003 technical status of the...

Vanel Jean-Charles LLR / IN2P3Vanel Jean-Charles LLR / IN2P3 NIKHEF 1-4 April 2003NIKHEF 1-4 April 2003

Technical status of the W-Si Technical status of the W-Si project project CALICE : CALICE : CACAlorimeter for the lorimeter for the LILInear near CCollider with ollider with

EElectronslectrons A calorimeter optimized for the Energy Flow A calorimeter optimized for the Energy Flow measurement of multi-jets final state at the Future measurement of multi-jets final state at the Future Linear Collider running at a center-of-mass energy Linear Collider running at a center-of-mass energy between 90 GeV to 1 TeV.between 90 GeV to 1 TeV.

Electromagnetic CalorimeterElectromagnetic Calorimeter Hadronic CalorimeterHadronic Calorimeter

http://polywww.in2p3.fr/flc/calice.html


General view of the General view of the calorimetercalorimeter Tracker : TPCTracker : TPC

ECAL : Sandwich Wplate & Si WaferECAL : Sandwich Wplate & Si WaferHCAL : DHCAL or AHCALHCAL : DHCAL or AHCALCoil : 4 T (2 Coil : 4 T (2 ))


ECAL concept : ECAL concept :

- A A fine granularity calorimeter with large number of segmentationfine granularity calorimeter with large number of segmentation is is proposed as the best solution for the energy flow, lepton identification, proposed as the best solution for the energy flow, lepton identification, photon reconstruction with good precision on energy and direction.photon reconstruction with good precision on energy and direction.

- On the other side, the coil thickness is bigger than usual due to the 4 On the other side, the coil thickness is bigger than usual due to the 4 Tesla field needed to maintain the machine background close to the Tesla field needed to maintain the machine background close to the beam pipe. beam pipe. Therefore , the ECAL has to be very compact. (1,30 m for Therefore , the ECAL has to be very compact. (1,30 m for ECAL and HCAL)ECAL and HCAL)

- Such a calorimeter could be made of Such a calorimeter could be made of Tungsten-Silicon sandwichTungsten-Silicon sandwich..- With pad of 1x1 cm and 40 layers : With pad of 1x1 cm and 40 layers : A TRACKER CALORIMETERA TRACKER CALORIMETER . .

- It gives a clean picture of all energy flow objects in all type of eventsIt gives a clean picture of all energy flow objects in all type of events- Simulation using GEANT4 lead to think of an energy resolution on Simulation using GEANT4 lead to think of an energy resolution on

electron/photon in the region of Delta E /E = 11% / sqrt(E) electron/photon in the region of Delta E /E = 11% / sqrt(E)


Toward physique Toward physique prototype :prototype :


ECAL general view

3rd structure (3×1.4mm of W plates)

370 mm

180 mm

Silicon wafer

2nd structure (2×1.4mm of W plates)

VME/…

HCAL

VFEMovable table

ECALBeam

monitoring

Global view of the test beam setup

Prototypes Prototypes overviewoverview

BEAM

1st structure (1.4mm of W plates)

Detector slab

370 mm


Design and construction of a mould with all metallic pieces for the 3 different structures

Mould for alveolus structure 1.4

Alveolus structuresAlveolus structures

Structure 5 alveolus :(10 layers)

Detector slab (here it is just a type H structure)


Sizes of the structure : Sizes of the structure : AlveolusAlveolus

8.5 mm8.5 mm

125

.6 m

m1

25

.6 m

m

374.5 mm

374.5 mm


Front End electronics

(Cfi / W) structure type H

Silicon wafer

Shielding

PCB

Al. ShieldingPCB (multi-layers)

( 2.4 mm)

Silicon wafer(0.525 mm)

Tungsten(1.4 mm, 2×1.4 or 3×1.4 mm)

8.5

mm

Composite structure (0.15 mm / layer)

Transverse view

Detector slabDetector slab

PCB : PCB :

- 14 layers14 layers

- Thickness 2.4 mmThickness 2.4 mm


Type H structure Type H structure

Carbon fiber

Tungsten 1.4 mm thick

Conception and realization of mould for manufacturing the whole 30 type H structures (3 different thickness W) :

Mould structure H : Ended alveolar :


Sizes of the structure : Sizes of the structure : SlabSlab

8,3

mm

8,3

mm

Aluminum foil : ~0.1 mmAluminum foil : ~0.1 mm

PCB : 2.4 mmPCB : 2.4 mm

Wafer : 0.525 mmWafer : 0.525 mm

Carbon fiber : 0.15 mmCarbon fiber : 0.15 mm

W plate : 1.4 mmW plate : 1.4 mm


PCBPCB

PCB, Wafer, Chip : still in progressPCB, Wafer, Chip : still in progress


WaferWaferWaferWafer

PCBPCB



PCBPCB

ChipChipChipChip



4” high resistivity wafers

- 525 microns thick – 5Kcm

- tile side: 62.0 + 0.0 - 0.1 mm

- guard ring

ECAL prototype ECAL prototype silicon wafer silicon wafer descriptiondescription

Dead zone w

idth is

only 1mm

39 good 39 good (< 2 nA leakage)

First test production First test production with 43 waferswith 43 wafers


Wafer :Wafer :

0

1

2

3

4

5

6

7

8

00,

40,

81,

21,

6 22,

42,

83,

23,

6

Nu

mb

er

of

pa

ds

,00%

20,00%

40,00%

60,00%

80,00%

100,00%

120,00%

Fréquence % cumulé

Leakage curent (nA)Leakage curent (nA)

Thickness : 525 microns Thickness : 525 microns 3 % 3 %

In silicon ~80 e-h pairs / micron In silicon ~80 e-h pairs / micron 42000 e42000 e-- /MiP/MiP

Capacitance : ~25 pFCapacitance : ~25 pF

Leakage current : 1 – 5 nALeakage current : 1 – 5 nA

Full depletion bias : ~150 VFull depletion bias : ~150 V

Nominal operating bias : 200 VNominal operating bias : 200 V

Institute of Nuclear Physics - Moscow State University

Institute of Physics, Academy of Sciences of the Czech Republic - Prague


1 wafer

62mm

62mm

PCBWafers

The aluminium sheet is the ground

Aluminium sheet

10mm

10mm

2 2 2 2 2

2

6

Diode footprint

Detector schematic descriptionDetector schematic descriptionAmorphous silicon deposition Resistance

Capacitance (AC coupling)

Yvan BonnasieuxYvan BonnasieuxPhysique des Interfaces et Couches Minces Physique des Interfaces et Couches Minces

- Ecole Polytechnique - Palaiseau- Ecole Polytechnique - Palaiseau

Diode pin out

Diode bias

Sig. readout


Passive component on the Passive component on the wafer :wafer :

R

C

1 0

1 0

0,1 0,1

2

0,1

0,2

7,6

9,8

Capacitance : Dielectric : silicon nitrite Refractive index : n=2 Thickness : e = 2 m

rn

Resistance : material : aSiH Resistivity : =1011 .cm Thickness : l = 2 m

e

SC

r0

S

lR

C= 1,32 nF

R= 102 M


Passive component on the Passive component on the wafer :wafer :

-0,6

-0,4

-0,2

0

0,2

0,4

0,6

-300 -200 -100 0 100 200 300

Tension (V)

curr

ent

(nA

)

Capacitance : C ~ 1.4 nF Leakage current

Problem of measurement

Resistance : Still in progress …


Gluing of Si waferGluing of Si waferA automatic device is use to deposit the conductive glue :

X-Y-Z table (400×400×150 mm3) with glue dispensing tool (conductive glue)

Gluing and placement ( 0.1 mm) of 270270 wafers with 6×6 pads

About 10 00010 000 points of glue.


Vdc = -200V

DC block

Detector

Amp

Charge preamp

OPA

shaper Track & hold

Front end electronic : Front end electronic : AsicAsic Laboratoire de l'Accélérateur Linéaire - OrsayLaboratoire de l'Accélérateur Linéaire - Orsay


Vdc = -200V

DC block

Detector

Amp

Charge preamp

OPA

shaper Track & hold

Front end electronic : Front end electronic : AsicAsic

4.2 pC max input charge (650 MIP)2.8V dynamic rangebelow 1% non-linearity

4.2 pC max input charge (650 MIP)2.8V dynamic rangebelow 1% non-linearity

Laboratoire de l'Accélérateur Linéaire - OrsayLaboratoire de l'Accélérateur Linéaire - Orsay


Vdc = -200V

DC block

Detector

Amp

Charge preamp

OPA

shaper Track & hold


180ns peaking time



Vdc = -200V

DC block

Detector

Amp

Charge preamp

OPA

shaper Track & hold


Multiplexing output :Multiplexing output :18 channel / chip18 channel / chip2 chips / wafer2 chips / waferENC = 2200 @ 80 pFENC = 2200 @ 80 pF

Multiplexing output :Multiplexing output :18 channel / chip18 channel / chip2 chips / wafer2 chips / waferENC = 2200 @ 80 pFENC = 2200 @ 80 pF


Talk from Bernard Bouquet : R&D for ECAL-VFE technology prototype


Front end electronic : AsicFront end electronic : Asic

New FLC_PHY2 – General presentation

FLC_PHY1 FLC_PHY2• Preamp 16 gains (0.2, 0.4, 0.8, 1.6pF switchable)• Lower noise (input transimproved)• Shaper bigain differential• track & hold differential

• Preamp 1 gain (1.5pF)• Low noise (2200e-)• Shaper Mono gainunipolar• track & hold Unipolar

Pin-Pincompatibility

AmpOPA

OPA

MUX out Gain=1

MUX out Gain=10

1 channel


New FLC_PHY2

• Peaking time is 200ns on both gain•High-gain shapers can be shut down by switching off their biases•Two different output for low gain and high gainInterface compatibility with the read out is keptNew interface not written at this point

Linearity simulationTransient simulation


DAQ :DAQ : VME (use and modify CMS board for Si VME (use and modify CMS board for Si

tracker)tracker)

21 January 2003 Paul Dauncey - UK Electronics 1

FED layoutIdeally, keep everything to the right, redo everything to the left

• Restrictsreadout board to same I/O and inter-FPGA paths as FED

• No major problems seen so far

Need of 6 boards for physic prototypeNeed of 6 boards for physic prototypeNeed of 6 boards for physic prototypeNeed of 6 boards for physic prototype

Talk from Paul Dauncey : DAQ for the CALICE beam test


Cosmic test bench: general Cosmic test bench: general viewview


2 XY planes : 16 in X et 16 in Y (40x40 cm2 XY planes : 16 in X et 16 in Y (40x40 cm22))

scintillators reading : PM + Ampli + Trigger scintillators reading : PM + Ampli + Trigger LogicLogic

Crate VME :Crate VME :

- QDC CAENQDC CAEN

- Trigger + Veto (dual timer)Trigger + Veto (dual timer)

- Crate Controller : Crate Controller : PCI MXI-2 (NI) PCI MXI-2 (NI) boardboard

2 XY planes : 16 in X et 16 in Y (40x40 cm2 XY planes : 16 in X et 16 in Y (40x40 cm22))

scintillators reading : PM + Ampli + Trigger scintillators reading : PM + Ampli + Trigger LogicLogic

Crate VME :Crate VME :

- QDC CAENQDC CAEN

- Trigger + Veto (dual timer)Trigger + Veto (dual timer)

- Crate Controller : Crate Controller : PCI MXI-2 (NI) PCI MXI-2 (NI) boardboard




Pattern generation board Pattern generation board (Labo)(Labo) : :Numerical CPLDNumerical CPLDClock toward PCB : 208 KHzClock toward PCB : 208 KHz

Level translator TTL/RS422Level translator TTL/RS422

Pattern generation board Pattern generation board (Labo)(Labo) : :Numerical CPLDNumerical CPLDClock toward PCB : 208 KHzClock toward PCB : 208 KHz

Level translator TTL/RS422Level translator TTL/RS422



Talk from Cristina Lo Bianco : Assembly and cosmic test for the W-SI prototype (CALICE)

Commercial board (National Instrument)Commercial board (National Instrument) - PCI Interface- PCI Interface - ADC 12 bits (1.25 Msa/s)- ADC 12 bits (1.25 Msa/s) - DMA Transfer- DMA Transfer - Input dynamic : from +/- 0.05 to +/- - Input dynamic : from +/- 0.05 to +/- 10V10V

Commercial board (National Instrument)Commercial board (National Instrument) - PCI Interface- PCI Interface - ADC 12 bits (1.25 Msa/s)- ADC 12 bits (1.25 Msa/s) - DMA Transfer- DMA Transfer - Input dynamic : from +/- 0.05 to +/- - Input dynamic : from +/- 0.05 to +/- 10V10V


Other ECAL R&D Other ECAL R&D

Thermal studiesThermal studies VFE inside beamVFE inside beam

(Chip evaluation board and small DAQ are (Chip evaluation board and small DAQ are ready)ready)

Passive component on the wafer Passive component on the wafer (Capacitance Ok and resistance still in progress)(Capacitance Ok and resistance still in progress)

Amorphous silicon … (works of Amorphous silicon … (works of Pierre Jarron at Cern)Pierre Jarron at Cern)

……



Thermal studiesThermal studies

Pad

Silicon wafer

PCB

Aluminium

Cooling tube Cooling tubeVFE chip1.3 mm

1.0 mm

0.5 mm

Thermal contact

gluing for electrical contact

AC coupling elements ?

power linecommand linesignal out

Pad

Silicon wafer

PCB

Aluminium

Cooling tube Cooling tubeVFE chip1.3 mm

1.0 mm

0.5 mm

Thermal contact

gluing for electrical contact

AC coupling elements ?

power linecommand linesignal out




In the case of 40 layers and In the case of 40 layers and considering a power considering a power dissipated of about 5 mW/cmdissipated of about 5 mW/cm22 the temperature at the the temperature at the middle of structure would be middle of structure would be about about 280 °C280 °C




PCB 1mm thick(with wafers)

Heat points(VFE chip)

Cooling channel

Radiator aluminium plate

Structure type H

Thermal sensors

Externalconnections



Thermal studiesThermal studies VFE inside beamVFE inside beam

(Chip evaluation board and small DAQ are (Chip evaluation board and small DAQ are ready)ready)

Passive component on the wafer Passive component on the wafer (Capacitance Ok and resistance still in progress)(Capacitance Ok and resistance still in progress)

Amorphous silicon … (works of Amorphous silicon … (works of Pierre Jarron at Cern)Pierre Jarron at Cern)

……


Physic prototype : Physic prototype : who who ??

Mechanic : Mechanic : – W plates : RussianW plates : Russian– ECAL Structure : ECAL Structure : LLRLLR– Infrastructure of beam test : Infrastructure of beam test : LPC Clermont-ferrand ? LPC Clermont-ferrand ? and and ??– beam Hodoscope : beam Hodoscope : ??

Data processing : Data processing : – DAQ / Event Builder : DAQ / Event Builder : ??– Simulation : Simulation : LLRLLR

Electronic : Electronic : – VFE : VFE : LALLAL– DAQ : DAQ : UKUK– Slow control : Slow control : ??

Instrumentation :Instrumentation :– silicon : silicon : LLRLLR and and PICM + Russian and CzechPICM + Russian and Czech– ECAL Integration :ECAL Integration : LLRLLR– Cosmic test bench : Cosmic test bench : LLRLLR


Physic Prototype : Physic Prototype : PlanningPlanning



ID Nom de tâcheQ2 04Q2 03 Q4 03Q1 03 Q1 04Q3 03

aoûmar févoctmai jan mar avrnov juijuljan maifév sep décavr

Prototype (design + layout + Fab.)

5 Gluing studies

Production (9 board)

Chip redisgn + Foundry + test

Cosmic test bench design + fab

Slow control

Event Builder19

DAQ14

Production VFE8

10

PCB design

DAQ

Event Builder

Slow control

Infrastructure test beam20 Infrastructure test beam

Assemblage et Montage11 Chip Production

Q3 04

juljui aoû

Production PCB9PCB fabrication + test +Production

Mecanic1 Mecanic

16

17

sep

15

Structure 1.42 Structure 1.4

Structure type H3 Structure type H

Structure 2.8 - 4.24 Structure 2.8 - 4.2

Assembly6 Assembly

Electronic VFE & PCB7 Electronic VFE & PCB

12 PCB & Chip assemnly

Cosmic test18 Cosmic test of slab detector

13

21 Beam test with electrons

Q4 04

oct nov déc






5 Gluing studies




Slow control

Event Builder19

DAQ14

Production VFE8

10

PCB design

DAQ

Event Builder

Slow control



Q3 04

juljui aoû


Mecanic1 Mecanic

16

17

sep

15




Assembly6 Assembly




13


Q4 04

oct nov décID Nom de tâcheQ2 04Q2 03 Q4 03Q1 03 Q1 04Q3 03


5 Gluing studies

Q3 04

juljui aoû

Mecanic1 Mecanic

sep




Assembly6 Assembly

Q4 04

oct nov déc






5 Gluing studies




Slow control

Event Builder19

DAQ14

Production VFE8

10

PCB design

DAQ

Event Builder

Slow control



Q3 04

juljui aoû


Mecanic1 Mecanic

16

17

sep

15




Assembly6 Assembly




13


Q4 04

oct nov déc




Slow control

Production VFE2

4

PCB design

Slow control


Q3 04

juljui aoû


sep



7

Q4 04

oct nov déc






5 Gluing studies




Slow control

Event Builder19

DAQ14

Production VFE8

10

PCB design

DAQ

Event Builder

Slow control



Q3 04

juljui aoû


Mecanic1 Mecanic

16

17

sep

15




Assembly6 Assembly




13


Q4 04

oct nov déc






Event Builder6

DAQ1 DAQ

Event Builder


Q3 04

juljui aoû

3

4

sep

2



Q4 04

oct nov déc






5 Gluing studies




Slow control

Event Builder19

DAQ14

Production VFE8

10

PCB design

DAQ

Event Builder

Slow control



Q3 04

juljui aoû


Mecanic1 Mecanic

16

17

sep

15




Assembly6 Assembly




13


Q4 04

oct nov déc


Physic prototype Physic prototype program is well advances

First test beam with electrons First test beam with electrons mi 2004mi 2004 First hadronic test beam First hadronic test beam 2005 2005

All is not covered :All is not covered :– Physic prototype in 2004Physic prototype in 2004– R&D (thermal et electronic)R&D (thermal et electronic)– ……

http://polywww.in2p3.fr/flc/calice.html

vanel jean-charles llr / in2p3 nikhef 1-4 april 2003 nikhef 1-4 april 2003 technical status of the...

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