uyemura evf-r presentation

16
Thru-cup EVF-R Technical Development Department Central Research Laboratory C. Uyemura & Co., Ltd. Additive for Acid Copper Via Filling Plating

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Uyemura EVF-R Copper Via Fill Presentation

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Page 1: Uyemura EVF-R Presentation

Thru-cup EVF-R

Technical Development Department

Central Research Laboratory

C. Uyemura & Co., Ltd.

Additive for Acid Copper Via Filling Plating

Page 2: Uyemura EVF-R Presentation

Thru-cup EVF-R

• Microvia Technology - Originally Driven by the Cell Phone Markets - has Spread to Automotive, Consumer & Military Markets

• The Drivers are Chip on Board, Flip Chips and BGA Components. As Well as a General Need for More Real Estate

• New Components with more Connections and Tighter Pitches Require the use of Micro Vias

Microvia Technology

Page 3: Uyemura EVF-R Presentation

• Conventional Drilled Vias have a Pitch Limit of ~0.80mm (31.5 mils)

• New Processors w/ Increased Pin Densities have a Pitch of 0.65mm (25.5 mil), Requiring Filled Micro Vias and Via-in-pad or Landless Via Technology

• Filled Vias have Increased Reliability for Thermal Cycling & IST

• More Reliable Lamination for Buried Vias

Thru-cup EVF-R

Via Fill Microvia Technology

Page 4: Uyemura EVF-R Presentation

Thru-cup EVF-R (1)

Chemicals Component at make-up while plating AnalyzeEVF-1A Brightener 1 mL/L 50 mL/KAH CVSEVF-B Carrier 10 mL/L 100 mL/KAH CVSEVF-R Leveler 2 mL/L 250 mL/KAH CVS

Features

1. Suited for Via Filling panel plating process in DC Mode. 2. Excellent blind via hole filling characteristics for holes with diameters larger

than 80 micro meters.3. Additive concentration controlled by CVS.4. Via Filling performance is not influenced by bath aging and can be

controlled easily.

Additives

Page 5: Uyemura EVF-R Presentation

Thru-cup EVF-R (2)

Mechanism of Via Filling

Brightener

Suppressor (Carrier,Leveler)

Brightener SuppressorSurface much low

Via Bottom little highuniform

Adsorption Deposition rate Bottom up fill

Page 6: Uyemura EVF-R Presentation

Thru-cup EVF-R (3)

Via Filling for Panel Plating

20 ASF-43 min.(19 micron )

20 ASF-43 min.(19 micron )

Via Filling (EVF-R)Via Filling (EVF-R)

PolishingPolishing

PatterningPatterning

StackStack

Page 7: Uyemura EVF-R Presentation

Process Flows

Button Plate

Laser Drill

Coat/Expose/Develop Resist

Resist Strip

Planarize

Panel Plate

Laser Drill

Via Fill Plate

Planarize

Thru-cup EVF-R

Electroless Copper

Electroless Copper

Via Fill Plate

Page 8: Uyemura EVF-R Presentation

Thru-cup EVF-R (4)

Cross SectionCross Section Laser Micro ScopeLaser Micro Scope

1.8 micron 1.8 micron

20 ASF-45 min.(20 micron )20 ASF-45 min.(20 micron )

Diameter: 80 micron Depth: 40 micron

Diameter: 80 micron Depth: 40 micron

Page 9: Uyemura EVF-R Presentation

Thru-cup EVF-R (5)

Via Filling for Panel Plating

20 ASF-34 min.

(15 micron )20 ASF-34 min.

(15 micron )

Diameter: 80 micron Depth: 35 micron

Diameter: 80 micron Depth: 35 micron

20 ASF-45 min.

(20 micron )20 ASF-45 min.

(20 micron )

Diameter: 145 micron Depth: 50 micron

Diameter: 145 micron Depth: 50 micron

20 ASF-45 min.

(20 micron )20 ASF-45 min.

(20 micron )

Diameter: 120 micron Depth: 55 micron

Diameter: 120 micron Depth: 55 micron

Page 10: Uyemura EVF-R Presentation

Thru-cup EVF-R (6)

Running Test

0

0.55

1.1

1.65

0.0 200.0 400.0 600.0 800.0 1000.0

(AH/L)

D (m

icro

n m

)

20 ASF-43 min.(19 micron )

20 ASF-43 min.(19 micron )

Diameter: 93 micronDepth: 60 micron

Diameter: 93 micronDepth: 60 micron

D

49AH/L49AH/L 307AH/L307AH/L

Tank Volume : 230LTank Volume : 230L

599AH/L599AH/L 994AH/L994AH/L

Anode maintenance

Page 11: Uyemura EVF-R Presentation

Thru-cup EVF-R (7)

A

B

C

Panel PWB board

500

400

(mm)

20 ASF-43 min.(19 micron)

20 ASF-43 min.(19 micron)

Diameter: 93 micron Depth: 60 micron

Diameter: 93 micron Depth: 60 micron

Tank Volume : 230LTank Volume : 230L

A B C

Page 12: Uyemura EVF-R Presentation

Thru-cup EVF-R (8)

Tensile Test

20 ASF-113 min.(50 micron )

20 ASF-113 min.(50 micron )

Tank Volume : 230LTank Volume : 230L

0

10

20

30

40

50

0.0 200.0 400.0 600.0 800.0 1000.0

Quantity of Electrolysis (AH/L)

Elon

gatio

n (%

)

0

10

20

30

40

50

Tens

ile s

tren

gth

(kg/

mm

2)

Elongation Tensile strength

Baking : 120oC – 2HrBaking : 120oC – 2Hr

Anode maintenance

Page 13: Uyemura EVF-R Presentation

Thru-cup EVF-R (9)

Equipment

Air agitation

About 40L/min air for 500 X 400mm board

Page 14: Uyemura EVF-R Presentation

Additive for Acid Copper Via Filling Plating

Parameter Operating RangeCuSO4.5H2O 190 - 220g/L

H2SO4 45 - 60g/L

Cl- 30 - 60mg/L

CD 1.5 - 3.5A/dm2

Temperature 22 - 28oC

Thru-cup EVF-R

Bath Compositions and Operating Conditions

Page 15: Uyemura EVF-R Presentation

Additive for Acid Copper Via Filling Plating Features

Suited for Via Filling panel plating processes.

Plating is DC no Pulse Plating required

Excellent blind via hole filling characteristics for holes with diameters larger than 80 micro meters.

Additive concentration controlled by CVS.

Via Filling performance is not influenced by bath aging and can be controlled easily.

Thru-cup EVF-R

Additive for Acid Copper Via Filling Plating

Page 16: Uyemura EVF-R Presentation

• Suited for Via Fill Panel Plating or Button Processes.

• Plating is DC no Pulse Plating required• Short Plating Cycle Times (Less than 120 min.)• Excellent blind via hole filling characteristics• Additive concentration controlled by CVS• No Excessive Carbon Treating• No Pre-Dips or Flash Plating Required• Via Filling performance is not influenced by bat

h aging and can be controlled easily.

Thru-cup EVF-R

Additive for Acid Copper Via Fill Plating