unclassified report: proceedings of the mos model 11 workshop · mos model 11 (mm11), the successor...

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Nat.Lab. Unclassified Report 2002/810 Date of issue: 04/2002 Proceedings of the MOS Model 11 workshop Physical Background and Parameter Extraction of MOS Model 11 R. van Langevelde (ed.) c Philips Electronics Nederland N.V. 2002

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Page 1: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

Nat.Lab. Unclassified Report 2002/810

Date of issue: 04/2002

Proceedings of the MOS Model 11workshopPhysical Background and Parameter Extraction ofMOS Model 11

R. van Langevelde (ed.)

c©Philips Electronics Nederland N.V. 2002

Page 2: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

2002/810

Authors’ address data: R. van Langevelde WAY41;[email protected]

c©Philips Electronics Nederland N.V. 2002All rights are reserved. Reproduction in whole or in part is

prohibited without the written consent of the copyright owner.

ii c©Philips Electronics Nederland N.V. 2002

Page 3: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

2002/810

Unclassified Report: 2002/810

Title: Proceedings of the MOS Model 11 workshopPhysical Background and Parameter Extraction of MOS Model11

Author(s): R. van Langevelde (ed.)

Part of project: Compact Modelling

Customer: Philips Semiconductors

Keywords: MOS Model 11, compact modelling, MOSFET, CMOS, RF

Abstract: A new compact model for MOS transistors has been developed,MOS Model 11 (MM11), the successor of MOS Model 9. OnApril 16th, 2002, a MOS Model 11 workshop was organized byMOS4YOU (J. Knol) in co-operation with the NatLab. Threelectures were given, dealing with:

• the physical background of MM11

• the parameter extraction for MM11

• RF-CMOS models based on MM11

The slides used for the last topic are classified, and can be foundin NL-TN2002/168. This report consists of the copies of theslides used in the first two presentations.

Conclusions:

c©Philips Electronics Nederland N.V. 2002 iii

Page 4: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

2002/810

iv c©Philips Electronics Nederland N.V. 2002

Page 5: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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MOS Model 11 Workshop

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April 16th, 2002

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� suitable for digital, analog and RF

� suitable for modern/future CMOS processes

�physics based

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�number of parameters comparable to MM9

� simple parameter extraction

Introduction: MOS Model 11

Goals for Goals for MOSMOS Model 11 (MM11): Model 11 (MM11):

Page 6: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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� bias-dependent overlap capacitances

implemented physical effects:

Page 7: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 19: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 21: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 23: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 24: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 25: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 26: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 27: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 28: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 29: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 30: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 31: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 32: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 33: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 35: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Page 36: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Kwok K. Hung et al. , IEEE Trans. El. Dev. 37 (3), p.654 (1990); ibid. (5), p.1323 (1990).

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Page 41: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Summary

� use of ys-formulations results in accurate description ofmoderate inversion region

� improved description of several physical effects results inaccurate and symmetrical description of currents, charges,noise and distortion

� fulfills Compact Model Council benchmark tests� parameters determined from I-V and C-V measurements� no increase in number of parameters� no increase in simulation time� verified on 100nm CMOS technology and sub-100nm devices

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Availability

� public domain• source code in C (including solver)

• documentation of model and parameter extraction

• http://www.semiconductors.philips.com/Philips_Models

� circuit simulators• Pstar (Philips in-house)

• Spectre (Cadence)

• Hspice (Avant!)

• ADS (Agilent)

• Eldo (Mentor Graphics)

• HSIM (NASSDA)

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Literature

� “Effect of gate-field dependent mobility degradation on distortion analysis

in MOSFET’s”, R. v. Langevelde and F.M. Klaassen,

IEEE Trans. El. Dev., Vol.44, p.2044, 1997

� “Accurate drain conductance modeling for distortion analysis in MOSFETs”,

R. v. Langevelde and F.M. Klaassen, IEDM’97 Technical Digest, p.313, 1997

� “A compact MOSFET model for distortion analysis in analog circuit design”,

R. v. Langevelde, Ph.D. Thesis, University of Technology Eindhoven, 1998

� “Accurate thermal noise model for deep sub-micron CMOS”,

A.J. Scholten et al., IEDM’99 Technical Digest, p.155, 1999

� “An explicit surface-potential-based MOSFET model for circuit simulation”,

R. v. Langevelde and F.M. Klaassen, Solid-State Electron., Vol.44, p.409, 2000

CMC benchmark tests

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� “RF-Distortion characterisation of sub-micron CMOS”,

L.F. Tiemeijer et al., Proc. ESSDERC’00, p.464, 2000

� “RF-Distortion in deep sub-micron CMOS technologies”,

R. v. Langevelde et al., IEDM’00 Technical Digest, p.807, 2000

� “BSIM4 and MOS Model 11 benchmarks for MOSFET capacitances”,

A.J. Scholten et al., CMC meeting, March 2001, http://www.eigroup.org/cmc

� “MOS Model 11, Level 1100’’, R. v. Langevelde,

Nat.Lab. Unclassified Report NL-UR 2001/813, April 2001, see website

� “Compact MOS modelling for RF circuit simulation”,

A.J. Scholten et al., Proc. SISPAD’01, p.194, 2001

� “Advanced compact MOS modelling”,

R. v. Langevelde et al., Proc. ESSDERC’01, p.81, 2001

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� “Compact modelling of pocket-implanted MOSFETs”,

A.J. Scholten et al., Proc. ESSDERC’01, p.311, 2001

� “Gate current: Modeling, DL extraction and impact on RF performance”,

R. v. Langevelde et al., IEDM’01 Technical Digest, p.289, 2001

� “Parameter extraction for surface-potential based compact MOS Model 11”,

R. v. Langevelde, Agilent World-Wide IC-CAP Users’ Conference, Dec. 2001

� “MOS Model 11, Level 1101’’, R. v. Langevelde et al.,

Nat.Lab. Unclassified Report NL-UR 2002/802, January 2002, see website

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MOS4YOU, Nijmegen

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� suitable for modern/future CMOS processes

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Introduction: MOS Model 11

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Page 46: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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� its parameter extraction is simple, and only usesDC and CV measurements

� temperature scaling is implemented on miniset-level (in contrast to MM9)

� it has a choice between two geometry scalingrules: binning and physical rules

� www.semiconductors.philips.com/philips_models

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Page 84: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

2002/810

c©Philips Electronics Nederland N.V. 2002

Page 85: Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

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Author(s) R. van Langevelde (ed.)

Title Proceedings of the MOS Model 11 workshopPhysical Background and Parameter Extraction of MOSModel 11

Distribution

Nat.Lab./PI WB-5PRB Briarcliff Manor, USALEP Limeil–Brevannes, FrancePFL Aachen, BRDCIP WAH

Director: Dr. C.J. van der Poel WAY31Department Head: Dr. R. Woltjer WAY41

Abstract

Full report

c©Philips Electronics Nederland N.V. 2002