unclassified report: proceedings of the mos model 11 workshop · mos model 11 (mm11), the successor...
TRANSCRIPT
Nat.Lab. Unclassified Report 2002/810
Date of issue: 04/2002
Proceedings of the MOS Model 11workshopPhysical Background and Parameter Extraction ofMOS Model 11
R. van Langevelde (ed.)
c©Philips Electronics Nederland N.V. 2002
2002/810
Authors’ address data: R. van Langevelde WAY41;[email protected]
c©Philips Electronics Nederland N.V. 2002All rights are reserved. Reproduction in whole or in part is
prohibited without the written consent of the copyright owner.
ii c©Philips Electronics Nederland N.V. 2002
2002/810
Unclassified Report: 2002/810
Title: Proceedings of the MOS Model 11 workshopPhysical Background and Parameter Extraction of MOS Model11
Author(s): R. van Langevelde (ed.)
Part of project: Compact Modelling
Customer: Philips Semiconductors
Keywords: MOS Model 11, compact modelling, MOSFET, CMOS, RF
Abstract: A new compact model for MOS transistors has been developed,MOS Model 11 (MM11), the successor of MOS Model 9. OnApril 16th, 2002, a MOS Model 11 workshop was organized byMOS4YOU (J. Knol) in co-operation with the NatLab. Threelectures were given, dealing with:
• the physical background of MM11
• the parameter extraction for MM11
• RF-CMOS models based on MM11
The slides used for the last topic are classified, and can be foundin NL-TN2002/168. This report consists of the copies of theslides used in the first two presentations.
Conclusions:
c©Philips Electronics Nederland N.V. 2002 iii
2002/810
iv c©Philips Electronics Nederland N.V. 2002
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April 16th, 2002
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Introduction: MOS Model 11
Goals for Goals for MOSMOS Model 11 (MM11): Model 11 (MM11):
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� use of ys-formulations results in accurate description ofmoderate inversion region
� improved description of several physical effects results inaccurate and symmetrical description of currents, charges,noise and distortion
� fulfills Compact Model Council benchmark tests� parameters determined from I-V and C-V measurements� no increase in number of parameters� no increase in simulation time� verified on 100nm CMOS technology and sub-100nm devices
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• http://www.semiconductors.philips.com/Philips_Models
� circuit simulators• Pstar (Philips in-house)
• Spectre (Cadence)
• Hspice (Avant!)
• ADS (Agilent)
• Eldo (Mentor Graphics)
• HSIM (NASSDA)
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� “Effect of gate-field dependent mobility degradation on distortion analysis
in MOSFET’s”, R. v. Langevelde and F.M. Klaassen,
IEEE Trans. El. Dev., Vol.44, p.2044, 1997
� “Accurate drain conductance modeling for distortion analysis in MOSFETs”,
R. v. Langevelde and F.M. Klaassen, IEDM’97 Technical Digest, p.313, 1997
� “A compact MOSFET model for distortion analysis in analog circuit design”,
R. v. Langevelde, Ph.D. Thesis, University of Technology Eindhoven, 1998
� “Accurate thermal noise model for deep sub-micron CMOS”,
A.J. Scholten et al., IEDM’99 Technical Digest, p.155, 1999
� “An explicit surface-potential-based MOSFET model for circuit simulation”,
R. v. Langevelde and F.M. Klaassen, Solid-State Electron., Vol.44, p.409, 2000
CMC benchmark tests
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Literature
� “RF-Distortion characterisation of sub-micron CMOS”,
L.F. Tiemeijer et al., Proc. ESSDERC’00, p.464, 2000
� “RF-Distortion in deep sub-micron CMOS technologies”,
R. v. Langevelde et al., IEDM’00 Technical Digest, p.807, 2000
� “BSIM4 and MOS Model 11 benchmarks for MOSFET capacitances”,
A.J. Scholten et al., CMC meeting, March 2001, http://www.eigroup.org/cmc
� “MOS Model 11, Level 1100’’, R. v. Langevelde,
Nat.Lab. Unclassified Report NL-UR 2001/813, April 2001, see website
� “Compact MOS modelling for RF circuit simulation”,
A.J. Scholten et al., Proc. SISPAD’01, p.194, 2001
� “Advanced compact MOS modelling”,
R. v. Langevelde et al., Proc. ESSDERC’01, p.81, 2001
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� “Compact modelling of pocket-implanted MOSFETs”,
A.J. Scholten et al., Proc. ESSDERC’01, p.311, 2001
� “Gate current: Modeling, DL extraction and impact on RF performance”,
R. v. Langevelde et al., IEDM’01 Technical Digest, p.289, 2001
� “Parameter extraction for surface-potential based compact MOS Model 11”,
R. v. Langevelde, Agilent World-Wide IC-CAP Users’ Conference, Dec. 2001
� “MOS Model 11, Level 1101’’, R. v. Langevelde et al.,
Nat.Lab. Unclassified Report NL-UR 2002/802, January 2002, see website
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Introduction: MOS Model 11
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� its parameter extraction is simple, and only usesDC and CV measurements
� temperature scaling is implemented on miniset-level (in contrast to MM9)
� it has a choice between two geometry scalingrules: binning and physical rules
� www.semiconductors.philips.com/philips_models
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ConclusionV
2002/810
c©Philips Electronics Nederland N.V. 2002
2002/810
Author(s) R. van Langevelde (ed.)
Title Proceedings of the MOS Model 11 workshopPhysical Background and Parameter Extraction of MOSModel 11
Distribution
Nat.Lab./PI WB-5PRB Briarcliff Manor, USALEP Limeil–Brevannes, FrancePFL Aachen, BRDCIP WAH
Director: Dr. C.J. van der Poel WAY31Department Head: Dr. R. Woltjer WAY41
Abstract
Full report
c©Philips Electronics Nederland N.V. 2002