um pps lab activities - hv readout long run - single source saturation test pps meeting april 30,...
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UM PPS Lab Activities- HV Readout Long Run
- Single Source Saturation Test
PPS meeting April 30, 2012
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UM PPS Activities 2
Waveforms from 1 Run Last Week
4/30/2012
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UM PPS Activities 3
HV Readout Long Run Setup• HV board with 11 lines [90,100] at 815V• 7 out of 11 lines with the circuitry to read them out• 4 consecutive HV lines 94-97 connected to the DRS • Signal attenuation of 32 dB (40 times on amplitude)• Source sitting on top of the 1 mm slit graphite collimator
aligned over a single HV line (#96)• DRS threshold very low (60 mV) so that no matter what line
had a pulse, the trigger line fired (Fan-in/Fan-out not OK) at the analysis lever a much harder threshold (200 mV) was used to select real hit-lines
• Trick: DRS channel 3 signals is always smaller so 3230 dB
4/30/2012
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UM PPS Activities 4
Number of HV Pulses/Event
4/30/2012
125
2
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UM PPS Activities 5
HV Pulses Multiplicity per Channel
4/30/2012
Last week result on the left quite different from this long run: now almost only the closest line has hits, and they have a comparable rate. Important to check with a larger number of lines (small improvement the same test with the source on one of the two extreme lines)
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UM PPS Activities 6
HV Pulse Amplitude
4/30/2012
The trigger line (#3) has larger amplitude pulses (and #4 smaller)
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UM PPS Activities 7
HV Pulse Rise Time (10%-90%)
4/30/2012
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UM PPS Activities 8
HV Pulse Width
4/30/2012
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UM PPS Activities 9
HV Pulse Pseudo-Charge=|A|*W
4/30/2012
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UM PPS Activities 10
Time Between Events
4/30/2012
Why this structure?
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UM PPS Activities 11
Saturation Test• Saturation: rate of incoming ionizing particles larger than the inverse of
the pixel recovery time (RHV*Cpixel) limiting the number of discharges
• PDP geometry fixes Cpixel measured ~10pF, and with HV quench resistor 200 MΩ RC~ 2ms max rate O(kHz)
• Sources measured with a Geiger counter after one layer of glass: (1R=2.58*10-4 C/kg ~2.1*109 ion couples) – 106Ru~130 mR/h ~7 ·104 ions/sec – 90Sr~170 mR/h ~ 105 ions/sec
over the entire source area ~1.3 cm2 (pixel ~1.5 mm2)• Idea: single HV line x 4 RO lines increasing the HV to maximize the
probability of a plasma discharge in the gas. Above a certain threshold higher voltage should not produce more hits
• Background events/rates are measured without any source and the data runs are only with 106Ru
4/30/2012
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UM PPS Activities 12
Test with R(HV)=200 MΩ
4/30/2012
Based on the fit results at R(HV)=200 MΩ with C(pixel)=10 pF RC= 2 ms saturation @ 500 Hz reached at 1900.6 V
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UM PPS Activities 13
Test with R(HV)=1 GΩ
4/30/2012
Behavior not very linear. Hint of saturation at HV>930V (different HV line but same rate as before once RHV=200 MΩ s used)
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UM PPS Activities 14
Extended Test with R(HV)=1 GΩ
4/30/2012
The behavior seems more linear (except the first points) and the hint of saturation at HV>930V has disappeared
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UM PPS Activities 15
Full Test with R(HV)=1 GΩ
4/30/2012
Second set of points the day after: no hints of saturation!Jump of background events more and more important at higher HV
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UM PPS Activities 16
No Saturation. Really?!
4/30/2012
The ratio of the data rates with the two RHV values agrees with the ratio of the maximum rates based on the recovery time we were saturated the whole time!
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UM PPS Activities 17
Conclusions• The HV readout long test shows that almost always only one line
has a pulse (are the nearby dead?)• A few features (like ΔT between events) not yet understood• Increasing the HV maybe/likely
– increases the active pixel area– increases the active distance in the gas gap to have plasma discharges– reduces the recovery voltage to have a new discharge (only for low
values of HV it is needed more than one recovery time to have back the line to a voltage high enough to produce another plasma discharge)
• To test the saturation effect we will keep the voltage fixed and just change the quench resistor. We expect that starting from low RHV the rate will increase until a certain value after which it is constant
4/30/2012