uci c h e m i s t r y p e n n e r g r o u p nanowire "thinning" by kinetically controlled...
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UCI C h e m i s t r yP e n n e r G r o u p
Nanowire "Thinning" by Kinetically Controlled Electrochemical Stripping: A New Route to Ultra
Small Metal Nanowires
2005 IM-SURE Symposium
Mike Thompson, R.M. Penner. Department of Chemistry. UC Irvine
Fig 2: At left is an SEM image of antimony wires with no stripping. At right is an image of the same sample that has been set at a potential of 0.01V for 60s. The diameter of the wire and the number of particles on the terraces have been greatly reduced by the stripping, while still retaining the morphology of the original wires.
UCI C h e m i s t r yP e n n e r G r o u p
1. Electrochemical Step Edge Decoration (ESED) as a method for making metal nanowires.
2. My mission: Make smaller Sb and Au nanowires
3. Smaller nanowires: Results and discussion
outline
UCI C h e m i s t r yP e n n e r G r o u p
1. Electrochemical Step Edge Decoration (ESED) as a method for making metal nanowires.
2. My mission: Make smaller Sb and Au nanowires
3. Smaller nanowires: Results and discussion
outline
UCI C h e m i s t r yP e n n e r G r o u p
Electrochemical Step Edge Decoration:
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UCI C h e m i s t r yP e n n e r G r o u p
Our electrochemical setup…
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-2000
-1500
-1000
-500
0
500
1000
-1000 -800 -600 -400 -200 0 200 400 600
Scan 1
Scan 2
Scan 3
Potential (mV vs. SCE)
Cu
rre
nt
(A
)
EoxEnuc
Egrow
Three steps : oxidation, nucleation, and growth
Sb3+ + 3 e- Sb0
Sb0 Sb3+ + 3 e-
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0
200
400
600
800
1000
0 5 10 15
Wire
Dia
met
er,
nm.
Time1/2,s1/2
-0.75 V, 1.0 mM Na2MoO
4-0.90 V, 0.16 mM Na
2MoO
4
4 s 16 s
256 s128 s
64 s32 s
ESED allows for size selective growth (MoO2 wires pictured):
UCI C h e m i s t r yP e n n e r G r o u p
1. Electrochemical Step Edge Decoration (ESED) as a method for making metal nanowires.
2. My mission: Make smaller Sb and Au nanowires
3. Smaller nanowires: Results and discussion
outline
UCI C h e m i s t r yP e n n e r G r o u p
-2000
-1500
-1000
-500
0
500
1000
-1000 -800 -600 -400 -200 0 200 400 600
Scan 1
Scan 2
Scan 3
Potential (mV vs. SCE)
Cu
rre
nt
de
ns
ity
(A
cm
-2)
Egrow, 75 sEox, 5sEnucl, 40 ms
A case study using antimony nanowires… 5 mM SbCl3, 0.1 M Tartaric Acid, 0.1 M Nitric Acid
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122 nm
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THESE WIRES ARE TOO BIG! Antimony nanowires with diameters larger than 40 nm have no interesting properties, and thus are useless.
How can we reduce the minimum size of these wires (from 120 nm to 40 nm)?
The answer is simple: Use electrochemistry to slowly etch them away.
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Sb CV(vs. SCE)
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-500
0
500
1000
-1000 -800 -600 -400 -200 0 200 400 600
Scan 1
Scan 2
Scan 3
-1000
-800
-600
-400
-200
0
-100 -80 -60 -40 -20 0 20 40
Potential (mV)C
urr
ent
(μA
)
Using kinetically-controlled anodic etching to make the wires smaller...
Potential (mV vs. SCE)
Cu
rrent (
A)
Sb3+ + 3 e- Sb0
Sb0 Sb3+ + 3 e-
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Penner, JPC-B 106 (2002) 3339.
Walter et al. ChemPhysChem 4 (2003) 131.
nanowire smoothing is predicted by the growth law...
nFL
Vt2iR(t) mdepdep
R= nanowire radius
idep=constant deposition current
Vm=molar volume
n=moles of e-
F= the Faraday
L= nanowire length
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nF
t2jVR(t) stripm
kinetically controlled stripping causes a constant anodic current density, thus...
Thompson, Menke, Penner. in preparation
UCI C h e m i s t r yP e n n e r G r o u p
1. Electrochemical Step Edge Decoration (ESED) as a method for making metal nanowires.
2. My mission: Make smaller Sb and Au nanowires
3. Smaller nanowires: Results and discussion
outline
UCI C h e m i s t r yP e n n e r G r o u p
Sb CV(vs. SCE)
-2000
-1500
-1000
-500
0
500
1000
-1000 -800 -600 -400 -200 0 200 400 600
Scan 1
Scan 2
Scan 3
-1000
-800
-600
-400
-200
0
-100 -80 -60 -40 -20 0 20 40
Potential (mV)C
urr
ent
(μA
)
Choosing the right stripping potential…
Potential (mV vs. SCE)
Cu
rrent (
A)
Sb3+ + 3 e- Sb0
Sb0 Sb3+ + 3 e-
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-0.060 V
-0.025 V
Stripping is extremely sensitive to the applied potential…
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0
5
10
15
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
Sb no stripping
Count
Wire Diameter (nm)
No stripping122 nm
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0
5
10
15
20
0 10 20 30 40 50 60 70 80 90 100110120130140
250 s @ -0.060 V vs. SCE
Count
Nanowire Diameter (nm)
73 nm
250 s stripping
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0
5
10
15
20
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
500 s -0.060 V vs. SCE
Count
Nanowire Diameter (nm)
33 nm 500 s stripping
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33 nm
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Nanowire Diameter vs. Etching Time
y = -0.1717x + 117.64
R2 = 0.987
0
20
40
60
80
100
120
140
0 100 200 300 400 500 600
Etching Time (s)
Nan
ow
ire
Dia
met
er (n
m)
nF
t2jVR(t) stripm
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Gold nanowires are interesting and difficult to make small…try stripping!
Au CV 7-15-05
-250
-200
-150
-100
-50
0
50
100
150
-200 0 200 400 600 800 1000 1200 1400 1600 1800
Potential (mV vs. SCE)
Cu
rre
nt
(uA
)
Scan 1
Scan 2
Scan 3
Oxidation: 5s @ 0.8V
Nucleation:
100ms @ -1.0 V
Growth:
30 s @ 0.45 V
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158 nm145 nm
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0
2
4
6
8
10
12
14
16
0 10 20 30 40 50 60 70 80 90100110120130140150160170180
Au no stripping
Count
Nanowire Diameter (nm)
No stripping145 nm
158 nm
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0
2
4
6
8
10
0 10 20 30 40 50 60 70 80 90100110120130140150160170180
600 s @ 0.810 V vs. SCE
B
Count
Nanowire Diameter (nm)
0
2
4
6
8
10
12
0 10 20 30 40 50 60 70 80 90100110120130140150160170180
1200 s @ 0.810 V vs. SCE
Count
Nanowire DIameter (nm)
600 s
1200 s
109 nm
66 nm
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Gold @ 0.810 V vs. SCE
y = -0.0707x + 144.4
R2 = 0.9909
0
20
40
60
80
100
120
140
160
180
0 200 400 600 800 1000 1200 1400
Stripping Time
Nan
ow
ire
Dia
met
er
Series1
Linear (Series1)
nF
t2jVR(t) stripm
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THANK YOU!
Thanks also to:
Prof. Reg Penner
Erik Menke
Ben Murray
Said Shokair and UROP staff
Konstantin Arutyunov
Funding provided by:
NSF
UROP
EU Commission ULTRA 1-D project for the HOPG