Slide 1

Temperature, strain, and width effectsTuning the hole mobility in InP semiconductor nanowires

Mariama Rebello Sousa DiasVictor Lopez-RichardSergio E. UlloaAdalberto PicininLeonardo K. Castelano Jos Pedro Rino Gilmar E. MarquesSummaryTemperature effects: Molecular dynamics simulationsConfinement and Strain effects: Valence band ground statesWidth effectsHole Mobility: width, strain, and temperatureConclusions

Potentials2 body interaction3 body interaction

WTemperature effects: MD simulationsTemperature effects: MD simulations Coulomb;Steric repulsion;Charge-induced dipole;Van der Waals attraction.Covalent character of the bonds (groups connected by In-P cohesive bond)Potentials2 body interaction3 body interaction

W

Shift to lower frequencies2. Increase in the peak size Phonon density of states:Temperature effects: MD simulationsConfinement and Strain effects

Confinement and Strain effects

E1A1Confinement and Strain effects

E2

Confinement and Strain effectsHole-phonon interaction via deformation potential

Hole-phonon interaction via deformation potential

Hole-phonon interaction via deformation potential

Hole-phonon interaction via deformation potentialHole mobility

Hole mobility

Hole mobility

ConclusionsMD simulation: LO phonon peak position and lifetime are different for different temperatures.Electronic structures changes with strain and/or size.Hole mobility changes in a non-monotonic fashion.Tuning parameters we can characterize a resonant behavior in the mobility.Thank you!