TRANSDUCERS '01EUROSENSORS XV

The 11th International Conference on Solid-State Sensors and Actuators

June 1 0 - 14,2001Munich, Germany

UNIVERSITATSBIBLIOTHEKHANNOVER

TECHNiSCHE!NFORMATIONSBIBLIOTHB<

DIGEST OF TECHNICAL PAPERS - VOLUME 1

Sessions 1A1 - 2D3Papers 1A1.01 - 2D3.09Ppp. 1 - 880

SpringerUB/TIB Hannover122 076 656

89

CONTENTS1A1 Plenary 1Monday, June 11, 2001, (9.00 a.m. - 12.30 p.m.)

1A1.01 Technologies for Microturbomachinery -M. Schmidt <invited speaker>, Massachusetts Inst. Tech.,Cambridge, MA, USA

P-2

1A1.02 MEMS Meets Insects -I. Shimoyama <invited speaker>, K. Hoshino, Y. Ozaki,S. Tamaki, S. Takeuchi, and T. Yasuda, U. Tokyo, Tokyo, Japanp. 6

1A2 Plenary 2Monday, June 11, 2001 (9.00 a.m. - 12.30 p.m.)

] |

1A2.01 Retina Implant - A BioMEMS Challenge -J.-U. Meyer <invited speaker>, Fraunhofer Inst. Biomed.Engineering, St. Ingbert, Germanyp. 12

1A2.02 MEMS - The View Back ... and the VistasAhead -R. S. Muller <invited speaker>, U. California, Berkeley,CA, USAp. 20

1A3 MEMS Power GenerationMonday, June 11, 2001 (2:00 p.m. - 3:20 p.m.)

1 A3.01 Miniaturized Thermoelectric Generators Basedon Poly-Si and Poly-SiGe Surface Micromachining -M. Strasser*, R. Aigner, and M. Franosch, Infineon Tech. A6,Munich, Germany, G. Wachutka, (and*), Munich U. Tech.,Munich, Germanyp. 26

1A3.02 A Combustion-Based MEMS ThermoelectricPower Generator -S. Schaevitz, A. Franz, K. Jensen, and M. Schmidt, MIT,Cambridge, MA, USAp. 30

1A3.03 An Integrated Combuster-ThermoelectricMicro Power Generator -C. Zhang, K. Najafi, L Bernal, and P. Washabaugh,U. Michigan, Ann Arbor, Ml, USA,p. 34

1A3.04 A Laser-Micromachined Vibrational to Elec-trical Power Transducer for Wireless Sensing Systems -N. Ching, H. Wong, W. Li, and P. Leong, Chin. U. Hong Kong,Hong Kong, SAR, Z. Wen, Chongqing U., Chinap. 38

1A3.05P Micro Generator Systems -K. Izumida, N. Toyota, M. Yoshimura, Y. Muroi, T. Takenaka,and K. Ikeda, Tokyo U., Tokyo, Japanp. 42

1A3.06P The Modelling of a Piezoelectric VibrationPowererd Generator for Microsystems -P. Glynne-Jones, S. Beeby, E. James, and N. White,U. Southampton, Southampton, UKp. 46

1B3 Acoustic SensorsMonday, June 11, 2001 (2:00 p.m. - 3:20 p.m.)

1 B3.01 Bimorph Piezoelectric Acoustic Transducer -M. Niu, U. Hawaii, Honoulu, HI, USA, E. Kim, USC,Los Angeles, CA, USAp. 110

1B3.02 High-Directivity Array of Ultrasonic MicroSensor Using PZT Thin Film on Si Diaphragm -K. Yamashita, H. Katata, and M. Okuyama, Osaka U., Osaka,Japan, H. Miyoshi, G. Kato, and S. Aoyagi, Kansai U., Osaka,Japan, Y. Suzuki, Tech. Res. Inst. Osaka Pref., Osaka, Japanp. 114

1B3.03 Self-Calibrating Micromachined Microphoneswith Integrated Optical Displacement Detection -N. Hall and F. Degertekin, Georgia Tech., Atlanta, GA, USAp. 118

1B3.04 Single-Chip Low-Voltage Analog-to-DigitalInterface for Encapsulation with Electret Microphone -0. Bajdechi and J. Huijsing, Delft U. Tech., Delft,The Netherlandsp. 122

1B3.05P Silicon Microphones with Low StressMembranes -M. Fiildner*, A. Dehe, R. Aigner, and T. Bever, InfineonTech. AG, Munich, Germany, R. Lerch, and (*), U. Erlangen-Nuremberg, Erlangen, Germanyp. 126

1 B3.06P Fabrication of a Biomimetic Corrugated Poly-silicon Diaphragm with Attached Single Crystal SiliconProof Masses -K. Yoo and J. Yeh, Cornell U., Ithaca, NY, USA, N. Tien, U.California, Davis, CA, USA, C. Gibbons, Q. Su, W. Cui, andR. Miles, SUNY, Binghampton, NY, USAp. 130

1C3 Packaqinq ft Wafer BondinqMonday, June 11, 2001 (2:00 p.m. - 3:20 p.m.)

1 C3.01 Selective Encapsulation Using a Polymeric orBonded Silicon Constraint Dam for Media CompatiblePressure Sensor Applications -G. Li, J. Schmiesing, A. McNeil, K. Neumann, B. Gogoi,G. Bitko, S. Petrovic, J. Torres, M. Fuhrmann, and D. Monk,Motorola Semieon., Tempe, AZ, USAp. 178

1C3.02 Wafer-Level Packaging Using Localized MassDeposition -P. Chang-Chien and K. Wise, U. Michigan, Ann Arbor, Ml, USAp. 182

1C3.03 'Cavity-Micromachining' Technology: Zero-Package Solution for Inertial Sensors -R. Aigner, K. Oppermann, H. Kapels, and S. Kolb, InfineonTech. AG, Munich, Germany,p. 186

1C3.04 Accelerated Hermeticity Testing of a Glass-Silicon Package Formed by RTP Aluminum-to-SiliconNitride Bonding -M. Chiao and L Lin, U. California, Berkeley, CA, USAp. 190

1C3.05P An Ultra-Thin Hermetic Package UtilizingElectroplated Gold -B. Stark and K. Najafi, U. Michigan, Ann Arbor, Ml, USAp. 194

1C3.06P Plastic BGA Package and Direct FilterAttachment for CMOS Thermal Imagers -M. Waelti, IntelliSense Corp., Wilmington, MA, USA,A. Schaufelbuhl, 0. Brand, and H. Baltes, ETH Zurich,Zurich, Switzerlandp. 198

1C3.07P Novel Optical Transceiver with CompoundParabolic Concentrator for Graded Index Plastic OpticalFiber -Y. Matsumoto, A. Nakazono, T. Kitahara, and Y. Koike,Keio U., Yokohama, Japanp. 202

1C3.08P Mounting of Si-Chips with Plastically BentCantilevers -E. Gartner, J. Friihauf, and E. Jansch, Tech. U. Chemnitz,Chemnitz, Germany, B. Hannemann, U. Bremen, Bremen,Germanyp. 206

1C3.09P Anisotropic Conductive Adhesion of Micro-sensors Applied in the Instance of a Low Pressure Sensor -R. Briegel, M. Ashauer, H. Ashauer, H. Sandmaier*, andW. Lang, HSG-IMIT, Villingen-Schwenningen, Germany,(* and U. Stuttgart, Stuttgard, Germany)p. 210

1C3.10P Nanosecond-Pulsed Laser Bonding with aBuilt-in Mask for MEMS Packaging Applications -C. Luo, L Lin, and M. Chiao, U. California, Berkeley, CA, USAp. 214

1 C3.11 P Local Laser Bonding for Low TemperatureBudget -U. Mescheder and C. Nachtigall, U. Furtwangen, Germany,M. Alavi, K. Hiltmann, C. Lizeau, and H. Sandmaier*,HSG-IMIT, Villingen-Schwenningen, Germany, (* andU. Stuttgart, Stuttgard, Germany)p. 218

1C3.12P An 8-Inch Wafer Bonding Apparatus withUltra-High Alignment Accuracy Using Surface ActivatedBonding (SAB) Concept -T. Suga, T. Itoh, and M. Howlader, U. Tokyo, Tokyo, Japanp. 222

1C3.13P Si-Si Bonding Using RF and MicrowaveRadiation -K. Thompson, Y. Gianchandani, J. Booske, and R. Cooper,U. Wisconsin, Madison, Wl, USAp. 226

1 C3.14P Anodic-Bonding on Glass Layers Prepared by aSpin-On Glass Process: Preparation Process and Experi-mental Results -H. Quenzer and A. Schulz, Fraunhofer ISiT, Itzehoe, Germany,T. Kinkopf, and T. Helm, Fraunhofer IBMT, St. Ingbert,Germanyp. 230

1C3.15P Silicon Pyrex Electrostatic Bonding:Applicability to Industrial Microdevices Production -G. Blasquez and P. Favaro, CNRS-LAAS, Toulouse, Francep. 234

1D3 Bio-Sensing SystemsMonday, June 11, 2001 (2:00 p.m. - 3:20 p.m.)

1 D3.01 A Dielectrophoresis-Based Array Cytometer -J. Voldman, M. Gray, and M. Schmidt, MIT, Cambridge,MA, USA, M. Toner, Mass. Gen. Hospital, Boston, MA, USAp. 322

1D3.02 Fabrication of Directly Synthesized DNA ChipUsing Photolithography for Rapid and Parallel GeneAnalysis -K. Takahashi and M. Esashi, Tohoku U., Sendai, Japan,K. Seio, and M. Sekine, Tokyo Inst. Tech., Yokohama, Japan,0. Hino, Cancer Inst, Tokyo, Japanp. 326

1D3.03 Immobilized Two Dimensional Protein Arraysby u-Stamp and Protein Well -F. Tseng, S. Lin, H. Huang, C. Huang, and C. Chieng, Nat.Tsing-Hua U., Hsinchu, Taiwan, ROCp. 330

1 D3.04 Electrochemical Gene Detection with PCR Chip -M. Kobayashi, M. Oomura, Y. Morita, Y. Murakami,K. Yokoyama, and E. Tamiya, JAIST, Ishikawa, Japan,T. Kusakawa, Hokuto Sci. Ind., Toyama, Japanp. 334

1D3.05P Soft Lithographic Techniques for Guidanceof Hippocampal Neurons on Micro-Electrode Arrays -L Griscom and H. Fujita, U. Tokyo, Japan, P. Degenaar andE. Tamiya, Japan Adv. Inst. Tech., Japan, B. LePioufle,Ecole Norm. Sup., Cachan, Bruz, Francep. 338

1D3.06P Development of a Superoxide Sensor bySuperoxide Dismutase Immobilization -K. Endo, S. Aoyagi, and K. Sakai, Waseda U., Tokyo, Japan,T. Miyasaka, N. Himi, and S. Mochizuki, Kawasaki Med.School, Japanp. 342

1D3.07P Bioelectronic Nose for Methyl MercaptanVapor Using a Xenobiotic Metabolizing System -K. Mitsubayashi and Y. Hashimoto, Tokai U., Kanagawa,Japanp. 346

1D3.08P Radial Artery Pulse Detection System Basedon EIGHT Constitutional Medicine Theory -Y. Jeong, S. Moon, C. Lee, H. Lee, J. Gong, J. Chang, andK. Chun, Seoul Nat. U., Seoul, Korea, D. Kuon, Jeson OrientalClin., Seoul, Korea, S. Park, Kyungpook, Nat. U.,Taegu, Koreap. 350

1D3.09P Development of a Multichannel IntegratedInterferometer Immunosensor -A. Ymeti, J. Kanger, R. Wijn, P. Lambeck, and J. Greve,U. Twente, Enschede, The Netherlandsp. 354

1D3.10P Flexible BIOMEMS with Electrode Arrange-ments on Front and Back Side as Key Component inNeural Prostheses and Biohybrid Systems -T. Stieglitz and M. Gross, Fraunhofer IBMT, St. Ingbert,Germanyp. 358

1D3.11P Self-Assemblage of Redox Proteins andNucleic Acids onto a Lipidic Biosensor -W. Boireau and D. Pompon, CNRS-CGM, Gif/Yvette, France,S. Bombard and M. Sari, CNRS UMR, Paris, Francep. 362

1D3.12P Development of Receptor Based AffinityMicroassay -T. Frommichen, A. Zimmermann, T. Nann, A. Sippel, andG. Urban, U. Freiburg, Freiburg, Germanyp. 366

1D3.14P An In-Line Osmometer for Application inTissue Based Bio-Sensor Systems -N. Mourlas, N. Maluf*, and G. Kovacs, Stanford U., Stanford,CA, USA, (* and New Focus, Santa Clara, CA, USA)p. 370

1 D3.15P A Biosensor for 'Escherichia Coli' Based on aPotentiometric Alternating Biosensing (PAB) Transducer -C. Ercole, M. Del Gallo, M. Pantalone, S. Santucci, andA. Lepidi, U. L'Aquila, L'Aquila, Italy, C. Laconi andL Mosiello, ENEA C.R. Casaccia, Rome, Italyp. 374

1D3.16P Sensing Nitric Oxide Neuronal MessengersUsing Screen-Printed Carbon Micro-Electrode Arrays -P. George and N. Thakor, Johns Hopkins U., Baltimore, MD,USA, J. Muthuswamy, Arizona U., Tempe, AZ, USA, J. Currieand M. Paranjape, Georgetown U., Washington, D.C., USAp. 378

1D3.17P Cuff Actuator for Adaptive Holding Conditionaround Nerves -S. Konishi, T. Kobayashi, H. Maeda, and M. Makikawa,Ritsumeikan U., Shiga, Japan, S. Asajima, Shiga U.Med. Sci., Shiga, Japanp. 382

1D3.18P Intracellular Neuronal Recording with HighAspect Ratio MEMS Probes -Y. Hanein, U. Lang, J. Theobald, R. Wyeth, T. Daniel,0. Willows, D. Denton, and K. Bohringer, U. Washington,Seattle, WA, USAp. 386

1 D3.19P Analysis of Microelectrode-Recorded Signalsfrom a Cardiac Cell Line as a Tool for PharmaceuticalScreening -K. Gilchrist, L Giovangrandi, and G. Kovacs, Stanford U.,Stanford, CA, USAp. 390

1 D3.20P The Fabrication of the Novel Micro Time-of-Flight (TOF) Mass Spectrometer with a Micro Ion Source -H. Yoon, T. Park, and S. Yang, Ajou U., Suwon, Korea,J. Kim, and K. Jung, Wonkwang U., Iksan, Koreap. 394

1D3.21P Discrimination of D-Amino Acids from L-Amino Acids Using Membrane Characteristics Change -H. Chibvongodze, K. Hayashi, and K. Toko, Kyushu U.,Fukuoka, Japanp. 398

1D3.22P Design of Miniaturized Solid-State SensorsBased on Silicon Structure with Back-Side Contacts -K. Wygladacz, E. Malinowska, and Z. Brzozka, Warsaw U.Tech., Warsaw, Poland, D. Pijanowska and J. Jazwinski,Inst. Elec. Tech., Warsaw, Polandp. 402

1A4 Integrated SystemsMonday, June 11, 2001 (3:40 p.m. - 5:20 p.m.)

1A4.01 A Miniaturized, Autonomous, ProgrammableStress Monitoring Device, Part of a Dental Prosthesis -R. Puers, W. Claes, W. Sansen, M. De Cooman, J. Duyck,and I. Naert, K. U. Leuven, Heverlee, Belgiump. 52

1A4.02 Monolithic Surface-Mieromachined SensorSystem for High Pressure Applications -H. Kapels, R. Aigner, Infineon Tech. AG, Munich, Germany,C. Kolle, Infineon Tech. AG, Villach, Austriap. 56

1A4.03 Dedicated Interface Electronics for Capa-citively-Coupled Conductivity Detection in On-ChipCapillary Electrophoresis -F. Laugere, G. Lubking, J. Bastemeijer, and M. Vellekoop,Delft U. Tech., Delft, The Netherlandsp. 60

1A4.04 Sensitivity Enhancement of MEMS InertialSensors Using Negative Springs and Active Control -M. Handtmann*, R. Aigner, and A. Meckes, Infineon Tech.AG, Munich, Germany, G. Wachutka, (and*) Munich U. Tech.,Munich, Germany,p. 64

1A4.05 A Smart Wind-Sensor Based on ThermalSigma-Delta Modulation -K. Makinwa and J. Huijsing, Delft U. Tech., Delft,The Netherlandsp. 68

1A4.06P High Mass and Spatial Resolution Mass SensorBased on Resonating Nano-Cantilevers Integrated withCMOS-Z. Davis, B. Helbo, 0. Hansen, and A. Boisen, Tech. U.Denmark, Lyngby, Denmark, G. Abadal, F. Perez-Murano,R. Ruiz, and N. Barniol, U. Auton. Barcelona, Bellaterra,Spain, F. Campabadal, J. Esteve, and E. Figueras, Inst.Microelec, Bellaterra, Spainp. 72

1A4.07P Position Sensing System Using IntegratedMagnetic Sensors and Neural Networks -M. Takayama, Shikoku Polytech. Col., Kagawa, Japan,K. Maenaka and A. Yamamoto, Himeji Inst. Tech., Hyogo,Japanp. 76

1 A4.08P An Accurate CMOS Smart Temperature Sensorwith Dynamic Element Matching and Second-OrderCurvature Correction -M. Pertijs and J. Huijsing, Delft U. Tech., Delft,The Netherlands, A. Bakker, Philips Semicon., Delft,The Netherlandsp. 80

1A4.09P The Scaling of Multiple Sensor Signals witha Wide Dynamic Voltage Range -G. Wang, G. Meijer, Delft U. Tech., Delft, The Netherlandsp. 84

1A4.10P Integrated Multi-Sensor System for Intel-ligent Data Carrier -T. Fujita and K. Maenaka, Himeji Inst. Tech., Hyogo, JapanK. Inoue, A. Tsuchitani, S. Arita, Tech. Res Inst. and SEIS Proj.,Osaka, Japanp. 88

1A4.11 P Novel Surface-Micromachined Low-PowerFuses for On-Chip Calibration -D. Maier-Schneider, S. Kolb, B. Winkler, and W. Werner,Infineon Tech. AG, Munich, Germanyp. 92

1A4.12P Sensors Linearity Improvement by Means ofDithering: Feasibility and Limits -J. Holub and R. Smid, Czech Tech. U., Prague, Czech Republicp. 96

1A4.13P Electronic Protection of the ConductivityDetector in a Micro Capillary Electrophoresis Channel -J. Bastemeijer, W. Lubking, F. Laugere, and M. Vellekoop,Delft U. Tech., Delft, The Netherlandsp. 100

1 A4.14P Sophisticated Interface Electronics for QCM -J. Schroder, R. Borngraber, F. Eichelbaum, andP. Hauptmann, Otto-von-Guericke U., Magdeburg, Germanyp. 104

1B4 Magnetic SensorsI Monday, June 11, 2001 (3:40 p.m. - 5:20 p.m.)

1 B4.01 Reference Magnetic Actuator for Self Calibrationof a Very Small Hall Sensor Array -M. Demierre, S. Pesenti, J. Frounehi, P. Besse, and R. Popovic,Swiss Fed. Inst. Tech., Lausanne, Switzerlandp. 136

1B4.02 A Vertical Hall Device in CMOS High-VoltageTechnology -E. Schurig, M. Demierre, and R. Popovic, Swiss Fed. Inst.Tech., Lausanne, Switzerland, C. Schott, SENTRON AG,Zug, Switzerlandp. 140

1B4.03 Single Deposition GMR Sensors for RotationalSpeed Sensing -C. Giebeler, J. Ruigrok, and J. van Zon, Philips Res. Lab.,Eindhoven, The Netherlandsp. 144

1 B4.04 High Directional Sensitivity of MicromachinedMagnetic Fluxgate Sensors -R. Rub, S. Gupta, and C. Ahn, U. Cincinnati, Cincinnati,OH, USAp. 148

1B4.05 Magnetic Sensor Based on Stabilized MOSFETField Emitter Arrays -M. Avram, Nat. Inst. Res. Dev. Microtech., Bucharest,Romaniap. 152

1B4.06P A New Highly Sensitive Parallel-Field HallMicrosensor -C. Roumenin, D. Nikolov, A. Ivanov, and C. Mihailova,Bulgarian Acad. Sci., Sofia, Bulgariap. 156

1B4.07P High Sensitivity Hall Magnetic Sensors UsingPlanar Micro and Macro Flux Concentrators -P. Drljaca, V. Schlageter, F. Vincent, and R. Popovic, SwissFed. Inst, Lausanne, Switzerlandp. 160

1 B4.08P Ferromagnetic Micromechanical Magneto-meters -H. Yang, N. Myung, J. Yee, D. Park, B. Yoo, M. Schwartz,K. Nobe, and J. Judy, U. California, Los Angeles, CA, USAp. 164

1B4.09P A Study on Narrow-Range Angle SensorsBased on Wiggles in Angular Dependence of Pseudo-HallEffect in Permalloy Thin Films -P. Kim*, N. Thuy, P. LeMinh*, and D. Manh, ITIMS, Hanoi,Vietnam, (* and U. Twente, Ensehede, The Netherlands)p. 168

1B4.10P Stochastically Distributed Nanowires withMicro-Lithographic Interconnects for Magnetic FieldSensors -M. Lindeberg and K. Hjort, Uppsala U., Uppsala, Sweden,Y. Jaccard and J. Ansermet, Swiss Fed. Inst., Lausanne,Switzerlandp. 172

1C4 Modelling ft SimulationMonday, June 11, 2001 (3:40 p.m. - 5:20 p.m.)

1C4.01 Improved Coupled-Field FE Analysis of Micro-machined Electromechanical Transducers -J. Wibbeler, CAD-FEM GmbH, Chemnitz, Germany,D. Scheibner and J. Mehner, Chemnitz U. Tech., Chemnitz,Germanyp. 240

1C4.02 Theoretical Analysis of the Tilting Effect inSilicon Micro-Switches -K. Suzuki and A. Pauly, NEC Corp., Ibaraki, Japanp. 244

1C4.03 Macromodeling of an Electrostatic TorsionalActuator -R. Sattler and G. Wachutka, Munich U. Tech., Munich,Germany, F. Plotz, Infineon Tech. AG, Munich, Germanyp.248

1C4.04 A Novel Topology Design Scheme for theMulti-Physics Problems of Electro-Thermally ActuatedCompliant Micromechanisms -L Yin and G. Ananthasuresh, U. Pennsylvania, Philadelphia,PA, USAp. 252

1 C4.05 An Analytical Model of the Piezojunction Effectfor Arbitrary Stress and Current Orientations -F. Creemer and P. French, Delft U. Tech., Delft,The Netherlandsp. 256

1C4.06P Computational Methods for Reduced OrderModeling of Coupled Domain Simulations -F. Bennini, J. Mehner, and W. Dotzel, Chemnitz U. Tech.,Chemnitz, Germanyp. 260

1C4.07P Automatic Reduced-Order Modeling inMEMCAD Using Modal Basis Functions -M. Varghese and S. Senturia, MIT, Cambridge, MA, USA,J. Gilbert, and V. Rabinovich, Coventor, Cambridge, MA, USAp. 264

1C4.08P Modeling and Simulation of Micro-electromechanical Systems with an Analog HardwareDescription Language -G. Zhou and P. Dowd, Nanyang Tech. U., Singaporep. 268

1C4.09P Automatic Transfer from Bulk-Silicon Tech-nology Simulation into the FEM-Environment -D. Zielke and R. Lieske, GEMAC mbH, Chemnitz, Germany,J. Will, Cadfem GmbH, Grafing, Germanyp. 272

1C4.10P Efficient Numerical Predictions of MEMSFluid-Structure Interaction Damping -J. Hyvarinen, Anker-Zemer Eng. AB, Karlskoga, Sweden,J. Soderkvist, Colibri Pro Dev. AB, Taby, Swedenp. 276

1C4.11P Layout Extraction for Integrated Electronicsand MEMS Devices -B. Baidya and T. Mukherjee, Carnegie Mellon U., Pittsburgh,PA, USAp. 280

1C4.12P A High Torque Density MEMS MagneticInduction Machine -H. Koser and J. Lang, MIT, Cambridge, MA, USA, F. Cms,and M. Allen, Georgia Tech., Atlanta, GA, USAp. 284

1C4.13P Modeling the Pull-In Parameters of Electro-static Actuators with a Novel Lumped Two Degrees ofFreedom Pull-In Model -0. Boehobza-Degani, Y. Yaniv, E. Socher, and Y. Nemirovsky,Technion, Haifa, Israelp. 288

1C4.14P On the Effect of Residual Charges on thePull-In Parameters of Electrostatic Actuators -0. Boehobza-Degani, E. Socher, and Y. Nemirovsky, Technion,Haifa, Israelp. 292

1C4.15P Low Voltage Driven Capillary ElectrophoresisChips Using Travelling Electric Field Design -Y. Lin and W. Wu, Nat. Cheng Kung U., Tainan, Taiwanp. 296

1 C4.16P Modeling and Characterization of Lame-modeMicroresonators Realized by UV-Liga -H. Majjad, J. Coudevylle, S. Basrour, and M. de Labachelerie,Lab. Phys. Metrol. Osci., Besancon, Francep. 300

1C4.17P Design and Simulation of Capacitive, Piezo-resistive and Piezoelectric Triaxial AccelerometersUsing a Highly Symmetrical Quad-Beam Structure -G. Li, Z. Li, Y. Jin, Y. Hao, D. Zhang, and G. Wu, Peking U.,Beijing, Chinap. 304

1 C4.18P FET Pressure Sensor and Iterative Method forModelling of the Device -R. Jachowicz and Z. Azgin, Warsaw U. Tech., Warsaw,Polandp. 308

1C4.19P Dielectric Micro-hotplate for IntegratedSensors: An Electro-Thermo-Mechanical Analysis -J. Puigcorbe, A. Vila, and J. Morante, U. Barcelona,Barcelona, Spain, I. Gracia, and C. Cane, Cen. Nat.Microelec, Barcelona, Spainp. 312

1C4.20P On-Chip Integrated Silicon Bulk-Microma-chined Soil Moisture Sensor Based on the DPHPMethod -A.Valente, U. Tras-os-Montes Alto Douro.Vila Real, Portugal,C. Couto and J. Correia, U. Minho, Azurem, Portugalp. 316

1D4 Technology for Biomedical SystemsMonday, June 11, 2001 (3:40 p.m. - 5:20 p.m.)

1 D4.01 A Miniaturized Analysis System Based onCapillary Electrophoresis and Contactless ConductivityDetection -J. Lichtenberg, E. Verpoorte, and N. de Rooij, U. Neuchatel,Neuchatel, Switzerlandp. 408

1D4.02 Fabrication of a Micro Needle for a TraceBlood Test -K. Oka and S. Aoyagi, Kansai U., Osaka, Japan, Y. Isono,Ritsumeikan U., Shiga, Japan, G. Hashiguchi, Kagawa U.,Kagawa, Japan, H. Fujita, Tokyo U., Tokyo, Japanp. 412

1 D4.03 A 256-Site 3D CMOS Microelectrode Array forMultipoint Stimulation and Recording in the CentralNervous System -M. Gingerich, J. Hetke, D. Anderson, and K. Wise,U. Michigan, Ann Arbor, Ml, USAp. 416

1 D4.04 A Disposable Intelligent Mosquito with aReversible Sampling Mechanism Utilizing the VolumePhase Transition of a Gel -H. Suzuki, T. Tokuda, and K. Kobayashi, U. Tsukuba, Ibaraki,Japanp. 420

1D4.05 Micromachined Ultrasonic Ophthalmic Micro-surgical Tool with Integrated Pressure Sensor -X. Chen and A. Lai, U. Wisconsin, Madison, Wl, USAp. 424

2A1 Inertial Sensors 1Tuesday, June 12, 2001 (8:30 a.m. - 10:00 a.m.)

2A1.01 Inertial Sensors for Automotive Applications -H. Kuisma <invited speaker>, VTI Hamlin, Vantaa, Finlandp. 430

2A1.02 RASTA: The Real-Acceleration-For-Self-TestAccelerometer -S. Reyntjens and R. Puers, K. U. Leuven, Leuven, Belgiump. 434

2A1.03 Fiber-Optics MEMS Accelerometer with HighMass Displacement Resolution -B. Guldimann, P. Dubois, P. Clerc, and N. de Rooij,U. Neuchatel, Neuchatel, Switzerlandp. 438

2A1.04 A Monolithic Three-Axis Accelerometer withSymmetric Properties -H. Rodjegard and G. Andersson, IMEG0 Inst, Goteborg,Swedenp. 442

2A1.05P 5-Axis Capacitive Motion Sensor Fabricatedby Silicon Micromachining Technique -Y. Watanabe, T. Mitsui, T. Mineta, and S. Kobayashi,Yamagata Res. Inst. Tech., Yamagata, Japan, N. Taniguchi,and K. Okada, WAC0H Corp., Saitama, Japanp. 446

2A1.06P A 19-Element Shock Sensor Array for Bi-Directional Substrate-Plane Sensing Fabricated bySacrificial LIGA -S. McNamara and Y. Gianchandani, U. Wisconsin,Madison, Wl, USAp. 450

2B1 Optical SensorsTuesday, June 12, 2001 (8:30 a.m. - 10:00 a.m.)

2B1.01 Transmission-Type Optical Sensors Fabricatedby Si Micromachining -K. Hane <invited speaker>, M. Sasaki, Tohoku U., Sendai,Japanp. 524

2B1.02 Miniature C02 Gas Sensor (1 cm3) Using SiliconMicrobolometers and Micro Variable Infrared Filter -N. Kishi, H. Hara, and H. Iwaoka, Yokogawa Elec. Corp.,Nagano, Japanp. 528

2B1.03 CMOS Integrated Wavefront Sensor -D. de Lima Monteiro, G. Vdovin, and M. Loktev, Delft U.Tech, Delft, The Netherlandsp. 532

2B1.04 Development of a Micro-Optical Distance Sensorwith Electrical I/O Interface -T. Oka, H. Nakajima, A. Shiratsuki, and M. Tsugai, MitsubishiElec. Corp., Hyogo, Japan, U. Wallrabe, U. Hollenbach,P. Krippner, and J. Mohr, FZK, Karlsruhe, Germanyp. 536

2B1.05P Bias Dependent Photocurrent Collection inp-i-n a-Si:H/SiC:H Heterojunction -P. Louro, M. Vieira, Y. Vygranenko, M. Fernandes, andR. Schwarz, ISEL, Lisbon, Portugal, M. Schubert, U. Stuttgart,Stuttgard, Germanyp. 540

2B1.06P Photochemical Reaction by Nanometer-ScaleLight Emitting Diode-Antifuses -P. LeMinh, J. Holleman, H. Wallinga, and A. van den Berg,U. Twente, Enschede, The Netherlandsp. 544

2B1.07P Fabrication and Optical Measurements ofMulti-Slit Grating Based Infrared Micro-Spectrometer -S. Kong, D. Wijngaards, G. de Graaf, and R. Wolffenbuttel,Delft U. Tech., Delft, The Netherlandsp. 548

2B1.08P Si Micromachined Optical Encoder Based onGrating Imaging -K. Hane, T. Endo, and M. Sasaki, Tohoku U, Sendai, Japan,Y. Ito, Harmonic Drive Sys. Inc., Nagano, Japanp. 552

2B1.O9P CMOS Micromachined Infrared Imager Pixel -H. Lakdawala and G. Fedder, Carnegie Mellon U.,Pittsburgh, PA, USAp. 556

2B1.1OP Wavelength-Differential Imaging UsingVariable Interferometer and Visualization of Gas Flow -K. Yamashita and M. Okuyama, Osaka U., Osaka, Japan,T. Nagashima, Hochiki Corp., Tokyo, Japan, S. Hatta,R. Kajihara, and Y. Hamakawa, Ritsumeikan U., Shiga, Japanp. 560

2B1.11P An Uncooled Infrared Sensor of DielectricBolometer Mode Using a New Detector Technique ofOperation Bias Voltage -M. Noda, K. Inoue, M. Ogura, H. Xu, S. Murakami,H. Kishihara, and M. Okuyama, Osaka U., Osaka, Japanp. 564

2B1.12P Pyroelectric High-Resolution Linear Arraywith 256 Micromachined Lithium Tantalate Pixels -R. Koehler*. V. Norkus*. G. Gerlach, Dresden U. Tech.,Dresden, Germany, J. Vollheim, N. HeB, G. Hofmann,and (*), DIAS GmbH, Dresden, Germanyp. 568

2C1 Basic Physical Effects in MEMS| Tuesday, June 12, 2001 (8:30 a.m. - 10:00 a.m.)

2C1.01 Nano Electromechanical Systems -M. Roukes <invited speaker>, Caltech, Pasadena, CA, USAp. 658

2C1.02 Why Is (111) Silicon a Better MechanicalMaterial for MEMS? -J. Kim and D. Cho, Seoul Nat. U., Seoul, Korea, R. Muller,U. California, Berkeley, CA, USAp. 662

2C1.O3 Analyzing Fluid Compression Effects inComplicated Micromachined Devices -X. Wang and J. White, MIT, Cambridge, MA, USAp. 666

2C1.04 Physically-Based Modeling of Squeeze FilmDamping by Mixed Level System Simulation -G. Schrag, P. Voigt, and G. Wachutka, Munich U. Tech.,Munich, Germanyp. 670

2C1.05P Microdischarge Device Fabricated in Siliconby Micromachining Technique with Pyramidal Cavity -J. Chen, S. Park, J. Eden, and C. Liu, U. Illinois, Urbana, IL, USAp. 674

2C1.06P Using the Pull-In Voltage as VoltageReference -E. Cretu, L Rocha, and R. Wolffenbuttel, Delft U. Tech.,Delft, The Netherlandsp. 678

2D1 Chemical SensingTuesday, June 12, 2001 (8:30 a.m. - 10:00 a.m.)

2D1.01 The Emergence of Physical Chemosensors andBiosensors -M. Vellekoop <invited speaker>, Delft U. Tech., Delft,The Netherlandsp. 770

2D1.02 MEMS Spectrometer for Infrared Gas AnalysisBased on a Tunable Filter of Porous Silicon -G. Lammel, S. Schweizer, and P. Renaud, Swiss Fed. Inst.Tech, Lausanne, Switzerlandp. 776

2D1.03 A Photoacoustic Gas Sensing Silicon Micro-system -P. Ohlckers* and A. Ferber, Fifty-four point Seven, Oslo,Norway, (* and U. Oslo, Oslo, Norway), V. Dmitriev, andG. Kirpilenko, Patinor Coat, Moscow, Russiap. 780

2D1.04 High-Q Factor RF Planar Microcoils on GlassSubstrates for NMR Spectroscopy -C. Massin, G. Boero, P. Eichenberger, P. Besse, and R. Popovic,Swiss Fed. Inst. Tech, Lausanne, Switzerlandp. 784

2D1.05P Micromachined Mass Spectrometer -N. Sillon and R. Baptist, CEA/LETI, Grenoble, Francep. 788

2A2 Inertial Sensors 2Tuesday, June 12, 2001 (10:20 a.m. - 12:00 p.m.)

2A2.01 A Symmetric Surface Micromachined Gyroscopewith Decoupled Oscillation Modes -S. Alper and T. Akin, Middle East Tech. U, Ankara, Turkeyp. 456

2A2.O2 A Link Beam Driven, Triple Axis Angular RateSensor Based on a Double Gimbal Structure -M. Tsugai, N. Konno, Y. Ariyoshi, and I Usami, MitsubishiElec. Corp, Hyogo, Japan, H. Fujita, U. Tokyo, Tokyo, Japanp. 460

2A2.03 New Approach for Frequency Matching of TuningFork Gyroscopes by Using a Nonlinear Driving Concept -0. Schwarzelbach, G. Fakas, and W. Nienkirchen,Fraunhofer ISiT, Itzehoe, Germanyp. 464

2A2.04 Self-Test for Resonant Structure Sensors Appliedto a Tuning Fork Gyro and a Resonant Accelerometer -K. Bauer, W. Ficker, K. Koppenhagen, E. Stenzel, andJ. Schalk, EADS Deutschl. GmbH, Munich, Germany,M. Aikele, TEMIC, Munich, Germany, F. Neubauer,DaimlerChrysler, Sindelfingen, Germanyp. 468

2A2.05 New Digital Readout Electronics for Capa-citive Sensors by the Example of Micro-Machined Gyro-scopes -A. GaiBer, W. Geiger, T. Link, J. Merz, S. Steigmajer, A. Hauser,H. Sandmaier*, and W. Lang, HSG-IMIT, Villingen-Schwenningen, Germany, (* and U. Stuttgart, Germany),N. Niklasch, ViCon Eng, Munich, Germanyp. 472

2A2.06P A Bulk-Micromachined Single Crystal SiliconGyroscope Operating at Atmospheric Pressure -S. Kim, J. Lee, C. Kim, and Y. Kim, Seoul Nat. U, Seoul, Koreap. 476

2B2 Image SensorsTuesday, June 12, 2001 (10:20 a.m. - 12:00 p.m.)

2B2.01 A Chopperless Pyroelectric Active PixelInfrared Image Sensor Using Chip Shift Operation -S. Kawahito, Shizuoka U, Hamamatsu, Japan, K. Sawada,K. Tada, M. Ishida, and Y. Tadokoro, Toyohashi U. Tech,Toyohashi, Japanp. 574

2B2.02 Laser Scanned Photodiodes (LSP) for ImageSensing -M. Vieira, M. Fernandes, P. Louro, and R. Schwarz, ISEL,Lisbon, Portugal, M. Schubert, U. Stuttgart, Stuttgard,Germanyp. 578

2B2.03 Electron Emission Type Infrared Image SensorUsing Ferroelectric Thin Plate -K. Tomita, D. Takamuro, K. Sawada, and M. Ishida, ToyohashiU. Tech, Toyohashi, Japanp. 582

2B2.04 A Millimeter-Wave Image Sensor Using AntennaCoupled Micro Thermocouple -D. Lee, K. Lee, S. Chang, and H. Hwang, Korea Elec. Tech. Inst,KyungGi-Do, Koreap. 586

2B2.05 A MEMS Non-lnterferometric Differential Con-focal Scanning Optical Microscope -W. Piyawattanametha, P. Patterson, G. Su, H. Toshiyoshi,and M. Wu, U. California, Los Angeles, CA, USAp. 590

2C2 Actuators 1Tuesday, June 12, 2001 (10:20 a.m. - 12:00 p.m.)

2C2.01 Parallel Linear Actuator System with HighAccuracy and Large Stroke -S. Konishi, K. Ohno, and M. Munechika, Ritsumeikan U,Shiga, Japanp. 682

2C2.02 A High-Frequency, High Stiffness PiezoelectricMicro-Actuator for Hydraulic Applications -D. Roberts, L Steyn, H. Li, K.Turner, L. Saggere, S. Spearing,M. Schmidt, and N. Hagood, MIT, Cambridge, MA, USA,R. Mlcak, Boston MicroSys. Inc., Woburn, MA, USAp. 686

2C2.03 A Monolithic Piezoelectric Miniature Robotwith 5 DOF -U. Simu and S.Johansson, Uppsala U, Uppsala, Swedenp. 690

2C2.04 A Novel Micromachined ElectromagneticLoudspeaker for Hearing Aid -M. Cheng, W. Huang, R. Huang, and T. Chin, Nat.Tsing Hua U, Hsinchu, Taiwanp. 694

2C2.05 An Active Guide Wire with Shape MemoryAlloy Bending Actuator Fabricated by Room Tem-perature Process -T. Mineta, T. Mitsui, Y. Watanabe, and S. Kobayashi,Yamagata Res. Inst. Tech, Yamagata, Japan, Y. Haga,M. Esashi, Tohoku U, Sendai, Japanp. 698

2C2.06P The Floating Mass Vibration Transducer UsingPolyimide Elastic Body for Implantable Hearing Aid -K. Lee, S. Lee, S. Park, J. Cho, and S. Lee, KyungpookNat. U, Taegu, Korea, S. Lee, Agency Tech. Std, Koreap. 702

2C2.07P Bistable Thin Film Composites with TiHfNi-Shape Memory Alloys -B. Winzek, T. Sterzl, and E. Quandt, CAESAR, Bonn, Germanyp. 706

2C2.08P SMA Microgripper System -M. Kohl, B. Krevet, and E. Just, FZK GmbH, Karlsruhe,Germanyp. 710

2C2.09P Compliant Microtransmissions for Recti-linear Electro-Thermal Actuators -L Chu, J. Hetrick, and Y. Gianchandani, U. Wisconsin,Madison, Wl, USAp. 714

2C2.10P Bulk Micromachined Durable Air-FlowMicroactuator Array for Robust Conveyance Systems -Y. Mita, M. Arai, A. Tixier, and H. Fujita, U. Tokyo, Tokyo, Japanp. 718

2C2.11 P A New Micro Pneumatic Actuator for Micro-mechanical Systems -S. Butefisch, V. Seidemann, and S. Biittgenbach,Braunschweig U. Tech, Braunschweig, Germanyp. 722

2C2.12P Influence of Elastic Deformation in SurfaceAcoustic Wave Motor Friction Drive -M. Kurosawa and H. Itoh, Tokyo Inst. Tech, Tokyo, Japan,K. Asai, Matsushita Co, Kawasaki, Japanp. 726

2D2 Chemical Sensing 2Tuesday, June 12, 2001 (10:20 a.m. - 12:00 p.m.)

2D2.01 Design and Fabrication of a HydrodynamicChromatography Chip -M. Blom, J. Gardeniers, M. Elwenspoek, and A. van den Berg,U. Twente, Enschede, The Netherlands, E. Chmela, andR. Tijssen, U. Amsterdam, Amsterdam, The Netherlandsp. 794

2D2.02 Chemical Images by an Artificial Olfactory Bulb -J. Mizsei and S. Ress, Budapest U. Tech, Budapest, Hungaryp. 798

2D2.03 Miniaturized Flame lonization Detector for GasChromatography -S. Zimmermann, J. Muller, Tech. U. Hamburg-Harburg,Hamburg, Germany, P. Krippner, and A. Vogel, ABB AGCorp. Res, Heidelberg, Germanyp. 802

2D2.04 New Type of Thermal Conductivity Sensor forGas Detection -P. Tardy, J. Coulon, and F. Menil, ENSEIRB U. Bordeaux,Talence, Francep. 806

2D2.05 Impedance Imaging of Chemical and Bio-Chemical Systems -J. Stetter, U. Gopel, W. Penrose, and L Manno, IllinoisInst. Tech, Chicago, IL, USAp. 810

2A3 Pressure ft Force SensorsI Tuesday, June 12,2001 (1:30 p.m. -3:10 p.m.)

2A3.01 A Piezoresistive Low-Pressure Sensor Fabri-cated Using Silicon-On-lnsulator (SOI) for HarshEnvironment Applications -J. von Berg, M. Gnielka, C. Cavalloni, and T. Boltshauser,Kistler Instr. AG, Winterthur, Switzerland, T. Diepold, FirstSen. Tech, Berlin, Germany, B. Mukhopadhyay, andE. Obermeier, Berlin U. Tech, Germanyp. 482

2A3.O2 High Temperature Characterization of CeramicPressue Sensors -M. Fonseca, J. English, M. von Arx, and M. Allen, GeorgiaTech, Atlanta, GA, USAp. 486

2A3.03 The NanoPirani - Presumably the World'sSmallest Pressure Sensor -S. Reyntjens, D. De Bruyker, and P. Puers, K. U. Leuven,Leuven, Belgiump. 490

2A3.04 Miniaturized Pressure Sensor Using a FreeHanging Strain-Gauge with Leverage Effect for IncreasedSensitivity -P. Melvas, E. Kalvesten, P. Enoksson, and G. Stemme,Royal Inst. Tech, Stockholm, Swedenp. 494

2A3.05 Capacitive Silicon Microsensor for Force andTorque Measurement -A. Meckes and R. Aigner, Infineon Tech. AG, Munich,Germany, G. Dorfinger, and G. Wachutka, Munich U. Tech,Munich, Germanyp. 498

2A3.06P A New Vacuum Friction Gauge Based on a SiTuning Fork -S. Kurth, K. Hiller, N. Zichner, J. Mehner, C. Kaufmann,W. Dotzel, and T. Gessner, Chemnitz U. Tech, Chemnitz,Germany, T. Iwert, and S. Biehl, u-Sen MST GmbH,Rudolstadt, Germanyp. 502

2A3.07P A Servo-Controlled Capacitive Pressure Sensorwith a Three-Mask Fabrication Sequence -J. Park and Y. Gianchandani, U. Wisconsin, Madison, Wl, USAp. 506

2A3.08P High Temperature Pressure Sensor withMonolithically Integrated CMOS Readout Circuit Basedon SIMOX Technology -K. Kasten and W. Mokwa*, Aachen U. Tech, Aachen,Germany, N. Kordas, H. Kappert, and (*), Fraunhofer IMS,Duisburg, Germanyp. 510

2A3.09P Fabrication and Testing of Single Crystalline3C-SiC Piezoresistive Pressure Sensors -C. Wu, S. Stefanescu, H. Kuo, C. Zorman, and M. Mehregany,Case West. Reserve U, Cleveland, Ohio, USAp. 514

2A3.10P Stable and Corrosion-Resistant SapphireCapacitive Pressure Sensor for High Temperature andHarsh Environments -S. Kimura, Y. Ishikura, T. Kataoka, M. Soeda, T. Masuda,Y. Yoshikawa, and M. Nagata, Yamatake Corp, Kanagawa,Japanp. 518

2B3 Micromachining ft EtchingTuesday, June 12, 2001 (1:30 p.m. - 3:10 p.m.)

2B3.01 Micromachining of Piezoelectric MEMS -J. Baborowski, N. Ledermann, S. Gentil, and P. Muralt,Swiss Fed. Inst. Tech, Lausanne, Switzerlandp. 596

2B3.02 Methods for Fabrication of Released NickelComb-Drive Devices on CMOS -A. Yalcinkaya, J. Ravnkilde, and 0. Hansen, Tech. U. Denmark,Lyngby, Denmark, L Johansen, IONAS A/S, Birkerod, Denmarkp. 600

2B3.03 Anisotropic Si Etching Technique for OpticallySmooth Surfaces -M. Sasaki, T. Fujii, Y. Li, and K. Hane, Tohoku U, Sendai, Japanp. 604

2B3.04 Ultra-Fast Anisotropic Silicon Etching withResulting Mirror Surfaces in Ammonia Solutions -C. Mihalcea, S. Khumpuang, M. Kuwahara, Z. Yang,R. Maeda, J. Tominaga, and N. Atoda, Nat. Inst Adv.Interdis. Res, Ibaraki, Japanp. 608

2B3.05 Aspect Ratio and Crystallographic OrientationDependence in Deep Dry Silicon Etching at CryogenicTemperatures -G. Craciun, M. Blauw, E. van der Drift, and P. French, DelftU. Tech, Delft, The Netherlandsp. 612

2B3.06P Fabrication of Micromechanical Structures ofTitania and Titanium with Electrophoretic Deposition -C. Marquordt and M. Allen, Georgia Tech, Atlanta, GA, USAp. 616

2B3.07P Surface Micromachining Process for c-Si asActive Material -A. Kovacs and U. Mescheder, U. Furtwangen, Furtwangen,Germanyp. 620

2B3.08P Advanced Sacrificial Poly-Si Technology forFluidic Systems -J. Berenschot, N. Tas, T. Lammerink, M. Elwenspoek, andA. van den Berg, U. Twente, Ensehede, The Netherlandsp. 624

2B3.09P A New Processing Technique to PreventStiction Using Silicon Selective Etching for S0I-MEMS -N. Fujitsuka and J. Sakata, Toyota Inc., Aichi, Japanp. 628

2B3.10P Electrochemical Etching for n-Type SiliconUsing a Novel Etchant -S. Izuo, H. Ohji, and K. Tsutsumi, Mitsubishi Elec. Corp,Hyogo, Japan, P. French, Delft U. Tech., Delft,The Netherlandsp. 632

2B3.11P A Novel Sub-Micron Gap FabricationTechnology Using Chemical-Mechanical Polishing (CMP):Application to Lateral Field Emission Device (FED) -C. Lee and C. Han, KAIST, Daejon, Koreap. 636

2B3.12P Micro- and Nanopatterning of Sensor Chipsby Means of Macroporous Silicon -A. Kurowski and J. Schultze, Heinrich-Heine U. Duesseldorf,Duesseldorf, Germany, H. LCith, and M. Schoning*, Res. Cent.Juelich, Juelich, Germany, (* and U. Aachen, Juelich, Germany)p. 640

2B3.13P Microfluidic Channel Routing with ProtectedConvex Corners -J. Kwon and E. Kim, U. S. California, Los Angeles, CA, USAp. 644

2B3.14P A New Explanation of Mask-Corner Undercutin Anisotropic Silicon Etching: Saddle Point in EtchingRate Diagram -M. Shikida, K. Nanbara, T. Koizumi, H. Sasaki, M. Odagakiand K. Sato, Nagoya U, Nagoya, Japan, M. Ando andS. Furuta, Sanwa Kagaku Kenkyusho Co. Ltd, Gifu, Japan,K. Asaumi, Fuji Co, Tokyo, Japanp. 648

2B3.15P BrF3 Dry Release Technology for Large Free-standing Parylene MEMS -T. Yao, X. Yang, and Y. Tai, California Tech, Pasadena, CA,USAp. 652

2C3 Actuators 2Tuesday, June 12, 2001 (1:30 p.m. - 3:10 p.m.)

2C3.01 Design, Fabrication and Testing of New CombActuators Realizing Three-Dimensional ContinuousMotions -Y. Ando, T. Ikehara, and S. Matsumoto, Nat. Inst. Adv. Ind.Sci. Tech, Ibaraki, Japanp. 732

2C3.02 Optimal Shape Design for Electrodes of a RotaryMicroactuator -S. Jung, J. Choi, C. Lee, C. Park, D. Min, C. Kim, and J. Jeon,Samsung Adv. Inst. Tech, Suwon, Korea, J. Park, Yonsei U,Seoul, Koreap. 736

2C3.03 Electrostatically-Driven-Leverage Actuator asan Engine for Out-of-Plane Motion -H. Lin, H. Hu, W. Fang, and R. Huang, Nat. Tsing Hua U,Hsinchu, Taiwanp. 740

2C3.04 Self-Reciprocating Radioisotope-PoweredCantilever -H. Li, A. Lai, J. Blanchard, and D. Henderson, U. Wisconsin,Madison, Wl, USAp. 744

2C3.05 A Micromechanical Switch with Electro-statically Driven Liquid-Metal Droplet -J. Kim, W. Shen, and C. Kim, U. California, Los Angeles, CA,USA, L Latorre, Lab. Inf., Robot, Microelec, Montpellier,Francep. 748

2C3.06P Fabrication of Micro XY-Stage with Large-AreaRectangular Shuttle Using Anodic Bonding Process -C. Kim and Y. Kim, Seoul Nat. U, Seoul, Korea, H. Jeong,J. Choi, and J. Jeon, Samsung Adv. Inst. Tech, Suwon, Koreap. 752

2C3.07P A Novel Electrostatic Vertical ActuatorFabricated in One Homogeneous Silicon Wafer UsingExtended SBM Technology -J. Kim, S. Park, and D. Cho, Seoul Nat. U, Seoul, Koreap. 756

2C3.08P New Current Drive Method to Extend theStable Operation Range of Electrostatic Actuators:Experimental Verification -R. Guardia, A. Dene, and R. Aigner, Infineon Tech. AG,Munich, Germany, L Castaner, U. Politec. Catalunya,Barcelona, Spainp. 760

2C3.09P 3D Self-Assembled Micro-Actuators forOptical Applications -E. Quevy and L Buchaillot, Inst. Elec. Microelec. Nord,Villeneuve d'Ascq, France, D. Collard, U. Tokyo, Tokyo, Japanp. 764

2D3 Materials for Gas SensingTuesday, June 12, 2001 (1:30 p.m. - 3:10 p.m.)

I i

2D3.01 Preparation of Thermally Stable MesoporousTin Oxide as a Semiconductor Gas Sensor Material -T. Hyodo, N. Nishida, Y. Shimizu, and M. Egashira,Nagasaki U, Nagasaki, Japanp. 816

2D3.02 Silicon Planar Microcalorimeter EmployingNanostructured Films -J. Gardner and S. Lee, Warwick U, Coventry, UK,P. Bartlett and S. Guerin, Southampton U, UK, D. Briand,and N. de Rooij, U. Neuchatel, Neuchatel, Switzerlandp. 820

2D3.03 Screen Printed Metal Oxide Gas Sensors withMicrominiature Gas Separation Systems -K. Pratt and C. King, Capteur Sen. Ana, Oxon, UKp. 824

2D3.04 Group Ill-Nitride based Sensors for ExhaustGas Monitoring -J. Schalwig and G. Muller, EADS Deutschl. GmbH, Munich,Germany, 0. Ambacher and M. Stutzmann, Munich U.Tech, Munich, Germanyp. 828

2D3.05 Pt/CeO2 SiC Schottky Diodes with HighResponse to Hydrogen and Hydrocarbons -S. Jacobsen, SensoNor, Horten, Norway, U. Helmersson,L Ekedahl, I. Lundstrom, and A. Lloyd Spetz, Linkoping U,Linkoping, Sweden, P. Martensson, AppliedSensor,Linkoping, Swedenp. 832

2D3.06P Comparison of Single and Binary Oxide Mo03,TiO2 and W03 Sol-gel Gas Sensors -K. Galatsis, Y. Li, and W. Wlodarski, RMIT U, Melbourne,Australia, E. Comini and G. Sberveglieri, U. Brescia, Brescia,Italy, C. Cantalini, S. Santucci, and M. Passacantando,U. L'Aquila, L'Aquila, Italyp. 836

2D3.07P Gas Sensing Properties of P-type Semicon-ducting Cr-doped TiO2 Thin Films -Y. Li, Shanghai Inst. Ceram, Shanghai, China, W. Wlodarski,K. Galatsis, S. Moshli, J. Cole, and S. Russo, RMIT U,Melbourne, Australia, N. Rockelmann, CSIRO, Melbourne,Australiap. 840

2D3.08P Polysilicon Mesoscopic Wires Coated by Pdas High Sensitivity H2 Sensors -A. Tibuzzi, C. Di Natale, and A. D'Amieo, U. Tor Vergata,Rome, Italy, B. Marghesin, S. Brida, and M. Zen, ITC-IRST,Povo, Italy, G. Soncini, U. Trento, Italyp. 844

2D3.09P New Material for Thin Film Filament of Micro-machined Hot-Plate -A. Pollien, J. Baborowski, N. Ledermann, and P. Muralt,Swiss Fed. Inst. Tech, Lausanne, Switzerlandp. 848

3A1 Microthrusters and MicrojetsWednesday, June 13, 2001 (8:30 a.m. - 10:00 a.m.)

3A1.01 Microsystems in Space Exploration -L Stenmark <invited speaker>, Uppsala U, Uppsala, Swedenp. 882

3A1.02 A Hybrid Cold Gas Microthruster System forSpacecraft -J. Kohler, U. Simu, J. Bejhed, H. Kratz, K. Jonsson, H. Nguyen,F. Bruhn, C. Hedlund, U. Lindberg, K. Hjort, and L Stenmark,Uppsala U, Uppsala, Swedenp. 886

3A1.03 High-Density Micromachined Acoustic EjectorArray for Micro Propulsion -T. Chou, K. Najafi, M. Muller, L Bernal, and P. Washabaugh,U. Michigan, Ann Arbor, Ml, USAp. 890

3A1.04 "Water Needle" - A New Phenomenon for Ink-Jet Printing -Q. Zou and D. Huang, U. Hawaii, Honolulu, HI, USA,E. Kim, USC, Los Angeles, CA, USAp. 894

3A1.05P A High-Impulse Low-Power MicrothrusterUsing Liquid Propellant with High-Viscous Fluid-Plug -S. Kim, T. Kang, and Y. Cho, Korea Adv. Inst. Sci, Taejon,Koreap. 898

3A1.06P A Micromachined Monolithic InkJet Print Headwith Dome Shape Chamber -C. Lee, K. Na, D. Maeng, K. Kuk, and Y. Oh, Samsung Adv.Inst. Tech, Suwon, Koreap. 902

3A1.07P A Surface Micromachined Electrostatic DropEjector -P. Galambos, K. Zavadil, R. Givler, and F. Peter, Sandia Nat.Labs, Albuquerque, NM, USA, A. Gooray, and G. Roller,Xerox Corp, Webster, NY, USA, J. Crowley, ElectrostaticApps, Morgan Hill, CA, USAp. 906 •

3A1.08P Performance Improvement in Domejet InkJetPrint Head by Measuring Temperature of Heater -D. Maeng, K. Kuk, C. Lee, K. Na, and Y. Oh, Samsung Adv.Inst. Tech, Suwon, Koreap. 910

3B1 Materials 1Wednesday, June 13, 2001 (8:30 a.m. - 10:00 a.m.)

3B1.01 Epitaxial Technology for MEMS Applications -M. Ishida <invited speaker>, Toyohashi U. Tech, Japanp. 980

3B1.02 Novel Low-Temperature CVD Process forSilicon Carbide MEMS -C. Stoldt, C. Carraro, W. Ashurst, M. Fritz, D. Gao, andR. Maboudian, U. California, Berkeley, CA, USAp. 984

3B1.03 Poly SiGe, a Promising Material for MEMSPost-Processing on Top of Standard CMOS Wafers -S. Sedky, Cairo U, Giza, Egypt, A. Witvrouw, and K. Baert,IMEC, Leuven, Belgiump. 988

3B1.04 A Bonded-Micro-Platform Technology forModular Merging of RF MEMS and Transistor Circuits -A. Wong, Y. Xie, and C. Nguyen, U. Michigan, Ann Arbor,Ml, USAp. 992

3C1 Microprobes ft NanodevicesWednesday, June 13, 2001 (8:30 a.m. - 10:00 a.m.)

3C1.01 The "Millipede" - More than 1000 Tips forParallel and Dense Data Storage -P. Vettiger <invited speaker>, G. Cross, M. Despont,U. Drechsler, U. Durig, W. Haberle, M. Lutwyche,H. Rothuizen, R. Stutz, R. Widmer, and G. Binnig, IBMZurich, Zurich, Switzerlandp. 1054

3C1.02 Microsystem for Vertical Profile Measurementof High Aspect-Ratio Microstructures -E. Lebrasseur, J. Pourciel, T. Bourouina, M. Ozaki,T. Masuzawa, and H. Fujita, U. Tokyo, Tokyo, Japanp. 1058

3C1.03 Nanometric Sensing and Processing withMicromachined Functional Probe -T. Ono, X. Li, D. Lee, H. Miyashita, and M. Esashi, Tohoku U,Sendai, Japanp. 1062

3C1.04 Fabrication and Properties of Ultra Small Si WireArrays by Vapor-Liquid-Solid Growth with Circuits -T. Kawano, Y. Kato, M. Futagawa, H. Takao, K. Sawada,and M. Ishida, Toyohashi U. Tech, Toyohashi, Japanp. 1066

3C1.05P Formation of Ultra-Shallow p+/n Junctionsusing BF2 Implantation for the Fabrication of ImprovedPiezoresistive Cantilevers -E. Cocheteau, C. Bergaud, L Bary, and R. Plana, LAAS/CNRS,Toulouse, France, B. Belier, U. Paris-Sud, Orsay, Francep. 1070

3C1.06P CMOS 10-Cantilever Array for Constant-ForceParallel Scanning AFM -D. Lange, M. Zimmermann, C. Hagleitner, 0. Brand, andH. Baltes, ETH Zurich, Zurich, Switzerlandp. 1074

3C1.07P On a MEMS-Based Parametrically AmplifiedAtomic Force Sensor -M. Wolfson, Cornell U, Ithaca, NY, USA, N. MacDonald,U. California, Santa Barbara, CA, USAp. 1078

3C1.08P A Longitudinally Vibrating Touch Probe SensorUsing PZTThin Film Vibrator -T. Kanda and T. Higuchi, U. Tokyo, Tokyo, Japan,M. Kurosawa, Tokyo Inst. Tech, Tokyo, Japanp. 1082

3C1.09P Fabrication of a Nanoneedle Array -H. Neves, R. Goldsmith, A. Degolyer, G. Bachand, J. Schmidt,and C. Montemagno, Cornell U, Ithaca, NY, USAp. 1086

3C1.10P Fabrication of Various Shapes Nano StructureUsing Si Anisotropic Etching and Silicidation -K. Kakushima, M. Mita, Y. Mita, and H. Fujita, U. Tokyo,Tokyo, Japan, G. Hashiguchi, Kagawa U, Japanp. 1090

3D1 Microfluidics - BioWednesday, June 13, 2001 (8:30 a.m. - 10:00 a.m.)

3D1.01 Disposable Plastic Microfluidic Arrays forApplications in Biotechnology -T. Boone, Z. Fan, I. Gibbons, A. Ricco <invited speaker>,A. Sassi, S. Singh, D. Slomski, H. Tan, S. Williams, V. Xiao,and Q. Xue, ACLARA Biosci. Inc., Mountain View, CA, USAp. 1146

3D1.02 Droplet Manipulation on a SuperhydrophobicSurface for Microchemical Analysis -A. Torkkeli, A. Ha'ara" and J. Saarilahti, VTT Electronics,Finland, H. Harma and T. Soukka, U. Turku, Turku, Finland,P. Tolonen, Wallac Oy, Turku, Finlandp. 1150

3D1.03 Hydrodynamic Addressing; a Flow Cell forImproved Signal Quality in Bioanalytical Systems -M. Tidare and H. Roos, Biacore AB, Uppsala, Sweden,U. Lindberg, Uppsala U, Uppsala, Swedenp. 1154

3D1.04 Microfluidic Chips with MxN ContinuousSample Introduction Function Using HydrodynamicFlow Switching -G. Lee, B. Hwei, and G. Huang, Nat. Cheng Kung U, Tainan,Taiwanp. 1158

3D1.05P PMMA (Poly-Methylmethacrylate) Microchipsfor On-Line DNA Preconcentration and Electrophoresis -Y. Lin, H. Ho, and S. Hou, Nat. Cheng Kung U, Tainan,Taiwan, C. Wu, ITRI, Hsinchu, Taiwanp. 1162

3D1.06P Glass-Silicon Bonding Technology with Feed-Through Electrodes for Micro Capillary Electrophoresis -Y. Chan, R. Lenigk, M. Carles, N. Sucher, M. Wong, andY. Zohar, Hong Kong U. Sci. Tech, Hong Kongp. 1166

3D1.07P Polycarbonate-Based Capillary ElectrophoresisDevices for DNA Analysis -Y. Liu, D. Ganser, A. Schneider, R. Liu, J. Blackwell, D. Fayden,D. Weston, D. Rhine, T. Smekal, and P. Grodzinski,Motorola Inc., Tempe, AZ, USAp. 1170

3D1.08P High Aspect Ratio Quartz Channels forCapillary Electrophoresis -L Ceriotti, E. Verpoorte, and N. de Rooij, U. Neuchatel,Neuchatel, Switzerland, K. Weible, Weible Optech,Neuchatel, Switzerlandp. 1174

3D1.09P Experimental Verification of an ImprovedMethod for Conductivity Detection in On-ChipCapillary Electrophoresis Systems -F. Laugere, A. Berthold, G. Lubking, J. Bastemeijer, R. Guijt,E. Baltussen, P. Sarro, and M. Vellekoop, Delft U. Tech,Delft, The Netherlandsp. 1178

3D1.10P Si Based Thin-Film Filter with High Visible-Over-UV Selectivity for Biochemical FluorescenseAnalysis -V. lordanov, G. Lubking, R. Ishihara, R. Wolffenbuttel, P. Sarro,and M. Vellekoop, Delft U. Tech, Delft, The Netherlandsp. 1182

3D1.11P A Chemilumineseence-Based Multi-SensorSystem for the Analytical Detection of Gases -S. Terakado, K. Namikoshi, T. Maruyama, T. Okabayashi,I. Yamamoto, K. Utsunomiya, N. Yamashita, andM. Nakagawa, Okayama U. Sci, Okayama, Japanp. 1186

3D1.12P On-Chip Impedance-Spectroscopy for Flow-Cytometry Using a Differential Electrode Sensor -S. Gawad, M. Wuthrich, and P. Renaud, Swiss Fed. Inst. Tech,Lausanne, Switzerland, L Schild, U. Lausanne, Lausanne,Switzerland, 0. Dubochet, Leister Process Tech, Sarnen,Switzerlandp. 1190

3D1.13P Multi-Inlet Chip for Electrokinetic Immuno-metric Heterogeneous Immunoassay -A. Dodge, X. Wang, E. Verpoorte, and N. de Rooij,U. Neuchatel, Neuchatel, Switzerlandp. 1194

3D1.14P A Durable Sensor for Blood Cell CounterUsing MEMS Technology -D. Satake, H. Ebi, N. Oku, and K. Matsuda, Horiba Ltd, Kyoto,Japan, H. Takao, M. Ashiki, and M. Ishida, Toyohashi U.Tech, Toyohashi, Japanp. 1198

3D1.15P Manufacturing and Integration of DiffractiveOptical Elements with Microfluidic CD Devices -F. Nikolajeff, 0. Larsson, and 0. Ohman, AmicAB, Uppsala,Sweden, P. Andersson, Gyros AB, Uppsala, Swedenp. 1202

3D1.16P Characterization of a Mixing Layer Micro-device -S. Lee, M. Wong, and Y. Zohar, Hong Kong U. Sci. Tech,Hong Kongp. 1206

3D1.17P Fabrication of Flexible, Implantable Micro-electrodes with Embedded Fluidic Microchannels -S. Metz, R. Holzer, and P. Renaud, Swiss Fed. Inst. Tech,Lausanne, Switzerlandp. 1210

3D1.18P Microfluidic Bioanalysis Cartridge withInterchangeable MicroChannel Separation Components -M. Taylor, F. Raisi, P. Belgrader, F. Pourahmadi, A. Herr,G. Kintz, and M. Northrup, Cepheid, Sunnyvale, CA, USAp. 1214

3D1.19P Universal Integrated Diagnostic SamplePreparation for Rapid Quantitative and QualitativeNucleic Acid Analysis -R. Buser and D. Buchel, NTB U. Appl. Sci, Buchs,Switzerland, D. Bachi, ETH Zurich, Zurich, Switzerland,P. Day, Children's Hospital, Zurich, Switzerlandp. 1218

3A2 Micropumps ft MicrovalvesWednesday, June 13, 2001 (10:20 a.m. - 12:00 p.m.)

3A2.01 The Optimized SMA Micro Pump ChipApplicable to Liquids and Gases -K. Ikuta, T. Hasegawa, and T. Adachi, Nagoya U, Nagoya,Japanp. 916

3A2.02 A Micromachined Silicon Low-Voltage Parallel-Plate Electrokinetic Pump -D. Laser, S. Yao, C. Chen, J. Mikkelsen Jr., K. Goodson,J. Santiago, and T. Kenny, Stanford U, Stanford, CA, USAp. 920

3A2.03 Pneumatic Silicon Microvalves with Piezo-electric Actuation -S. Klutje, G. Neumayer, U. Schaber, and M. Wackerle,Fraunhofer IMS, Munich, Germany, M. Maichl, P. Post,and M. Weinmann, Festo AG, Esslingen, Germany,R. Wanner, Beurer GmbH, Ulm, Germanyp. 924

3A2.04 Electrostatic Microvalves in Silicon with 2-Way-Function for Industrial Applications -J. Schaible, R. Zengerle*, H. Sandmaier**, T. Strobelt, HSG-IMIT,Villingen-Schwenningen, Germany, J. Vollmer, HoerbigerOriga, Schongau, Germany, (* and U. Freiburg, Freiburg,Germany), (** and U. Stuttgart, Stuttgard, Germany)p. 928

3A2.05 Micro Flow Switches Using Thermal Gelationof Methyl Cellulose for Biomolecules Handling -K. Tashiro, S. Ikeda, T. Sekiguchi, H. Sato, S. Shoji, H. Makazu,K. Watanabe, and T. Funatsu, Waseda U, Tokyo, Japan,S. Tsukita, Kyoto U, Kyoto, Japanp. 932

3A2.06P Batch Fabrication of Silicon Micropumps -M. Richter, J. Kruckow, J. Weidhaas, M. Wackerle, A. Drost,U. Schaber, M. Schwan, and K. Kuhl, Fraunhofer IMS,Munich, Germanyp. 936

3A2.07P High-Speed and Bi-Stable Electrolysis-Bubble Actuated Gate Valves -A. Papavasiliou, A. Pisano, and D. Liepmann, U. California,Berkeley, CA, USAp. 940

3B2 Materials 2| Wednesday, June 13, 2001 (10:20 a.m. - 12:00 p.m.)

3B2.01 Performance Characterization of Ultra-ThinN-Type Piezoresistive Cantilevers -Y. Liang, S. Ueng, and T. Kenny, Stanford U, Stanford, CA,USAp. 998

3B2.02 Single Crystalline Silicon Nano Wire Piezo-resistors for Mechanical Sensors -I Toriyama, Y. Tanimoto, and S. Sugiyama, Ritsumeikan U,Shiga, Japanp. 1002

3B2.03 The Temperature-Stable Piezoelectric MaterialGaP04 and its Sensor Applications -P. Worsch, P. Krempl, F. Krispel, C. Reiter, H. Thanner, andW. Wallnofer, AVL List GmbH, Graz, Austriap. 1006

3B2.04 Thermophysical Characterisation of Poly Si07Ge03

for Use in Thermoelectric Devices -D. Wijngaards, S. Kong, P. Sarro, and R. Wolffenbuttel,Delft U. Tech, Delft, The Netherlandsp. 1010

3B2.05 Investigation of 4H-SiC as a New Material forHall or Temperature Sensors Working up to 500° C -J. Robert, S. Contreras, J. Camassel, J. Pernot, and E. Neyret*,U. Montpellier II, Montpellier, France, L Di Cioccio,T. Billon, (and *), CEA/LETI, Grenoble, Francep. 1014

3B2.06P PZTThin Films for Piezoelectric Micro-actuatorApplications -H. Kiippers, T. Leuerer, U. Schnakenberg, W. Mokwa,M. Hoffmann, T. Schneller, U. Bottger, and R. Waser,Aachen U. Tech, Aachen, Germanyp. 1018

3B2.08P High Aspect Ratio Soft Micromolding ofPiezoceramic Thick Films -T. Rosqvist and S.Johansson, Uppsala U, Uppsala, Swedenp. 1022

3B2.09P Properties of 1-3 PZT Composite for Ultra-sonic Transducer Array Fabricated by Micro-Pressingand Dicing Methods -J. Park, J. Cho, S. Jung, and S. Park, Korea Elec. Tech. Inst,Kyung-gi, Korea, S. Lee, D. Kim, and J. Han, Prosonic Co.Ltd, Kyong-buk, Koreap. 1026

3C2 MEMS Resonators[Wednesday, June 13, 2001 (10:20 a.m. - 12:00 p.m.)

3C2.01 A 10-MHz Micromechanical Resonator PierceReference Oscillator for Communications -S. Lee, M. Demirci, and C. Nguyen, U. Michigan, Ann Arbor,Ml, USAp. 1094

3C2.02 High Q Achieved in Microwave InductorsFabricated by Parallel Self-Assembly -G. Dahlmann and E. Yeatman, Imperial College, London,UK, P. Young, I. Robertson, and S. Lucyszyn, U. Surrey,Guildford, UKp. 1098

3C2.03 14 MHz Micromechanical Oscillator -T. Mattila, 0. Jaakkola, J. Kiihamaki, J. Karttunen, A. Oja,H. Seppa, and H. Kattelus, VTT, Finland, T. Lamminmaki,P. Rantakari, and I. Tittonen, Helsinki U. Tech, Helsinki,Finlandp. 1102

3C2.04 Much Enlarged Resonant Amplitude of Micro-Resonator with Two-Degreee-Of-Freedom (2-DOF)Mechanical Coupling Scheme -X. Li*, T. Ono, and M. Esashi, Tohoku U, Sendai, Japan,R. Lin, Nanyang Tech. U, Singapore, (* and Chinese Acad.Sci, Shanghai, China)p. 1106

3C2.05 Q-Optimized Lateral Free-Free Beam Micro-mechanical Resonators -W. Hsu, J. Clark, and C. Nguyen, U. Michigan, Ann Arbor,Ml, USAp. 1110

3C2.06P Embedded Solenoid Inductors for RF CMOSPower Amplifiers -Y. Yoon, E. Chen, M. Allen, and J. Laskar, Georgia Tech,Atlanta, GA, USAp. 1114

3C2.07P Measurement Techniques for Capacitively-Transduced VHF-to-UHF Micromechanical Resonators -J. Clark, W. Hsu, and C. Nguyen, U. Michigan, Ann Arbor,Ml, USAp. 1118

3D2 Polymer-Based MicrosystemsWednesday, June 13, 2001 (10:20 a.m. - 12:00 p.m.)

3D2.01 A Foldable Artificial Lens with an IntegratedTransponder System for Measuring Intraocular Pressure -S. Ullerich, W. Mokwa*, and U. Schnakenberg, Aachen U.Tech, Aachen, Germany, G. vom Bogel (and *), FraunhoferIMS, Duisburg, Germanyp. 1224

3D2.02 Design of a Self-Contained 3D Microvalve inPDMS-V. Namasivayam, U. Michigan, Ann Arbor, Ml, USA, R. Liu,and P. Grodzinski, Motorola PSRL, Tempe, AZ, USA,B. Towe, Arizona State U, Tempe, AZ, USAp. 1228

3D2.03 Novel Liquid Injection Method with Wedge-Shaped MicroChannel on a PDMS Microchip System forDiagnostic Analyses -R. Aoyama, M. Seki, J. Hong, and T. Fujii, U. Tokyo, Tokyo,Japan, I. Endo, Inst. Phys. Chem. Res, Saitama, Japanp. 1232

D2.04 Modular Biosystem for the Culture andCharacterisation of Scarce Epithelial Cell Tissues -S. Hediger, G. Chambon, A. Sayah, and M. Gijs, Swiss Fed.Inst. Tech, Lausanne, Switzerland, W. Hunziker, U. Lausanne,Lausanne, Switzerlandp. 1236

3D2.05 A New Fixed-Volume Metering Micro-dispenser Module Based on sPROMs Technology -A. Puntambekar, H. Cho, C. Hong, J. Choi, and C. Ahn,U. Cincinnati, Cincinnati, OH, USA, S. Kim, and V. Makhijani,CFD Res. Corp, Huntsville, AL, USAp. 1240

3A3 Microfluidics - SystemsWednesday, June 13, 2001 (1:30 p.m. - 3:10 p.m.)

3A3.01 A Pneumatically-Actuated Silicon Microvalve andits Application to Functional Fluidic Integrated Circuits -H. Takao, M. Ishida, and K. Sawada, Toyohashi U. Tech,Toyohashi, Japanp. 946

3A3.02 Characterization of a Micro-Mixing, Pumping,and Valving System -A. Deshmukh, D. Liepmann, and A. Pisano, U. California,Berkeley, CA, USAp. 950

3A3.03 Smart Passive Microfluidic Systems Based onFerrofluids for uTAS Applications -R. Perez-Castillejos, J. Esteve, and M. Acero, CSIC,Barcelona, Spain, A. Menz, IMSAS, Bremen, Germany,K. Kriz, Lund U, Lund, Swedenp. 954

3A3.04 A Frequency Addressable Ultrasonic MicrofluidicActuator Array -V. Kaajakari, A. Sathaye, and A. Lai, U. Wisconsin, Madison,Wl, USAp. 958

3A3.05 Stainless Steel-Based Integrated Mass-FlowController for Reactive and Corrosive Gases -K. Hirata, D. Sim, and M. Esashi, Tohoku U, Sendai, Japanp. 962

3A3.06P Thermal Bubble Powered Microfluidic Mixerwith Gas Bubble Filter -J. Tsai, U. Michigan, Ann Arbor, Ml, USA, L Lin, U. California,Berkeley, CA, USAp. 966

3A3.07P A Portable Drug Delivery System with SiliconCapillaries as Key Components -M. Richter, A. Leukert, U. Schaber, and M. Wackerle,Fraunhofer IMS, Munich, Germany, N. Lutter and E. Kozma,U. Erlangen-Nuremberg, Germany, K. Neuder, LRE Tech.GmbH, Munich, Germanyp. 970

3A3.08P Development of a High Density, Planar,Modular Microfluidic Interconnect System -R. Darling. U. Washington, Seattle, WA, USAp. 974

3B3 Surface ModificationWednesday, June 13, 2001 (1:30 p.m. - 3:10 p.m.)

3B3.01 Low Force Electrical Contact MeasurementsUsing Piezoresistive MEMS Cantilevers to CharacterizeThin-Film Metallization -B. Pruitt, D. Choi, J. Florando, W. Nix, and T. Kenny,Stanford U, Stanford, CA, USA, R. Martens, S. Wenzel,and C. Reynolds, Formfactor Inc., USAp. 1032

3B3.02 Analysis and Experiments for EvaluatingAdhesion of Arbitrary Shape Microstructures usingOptimization Method -S. Tezuka, S. Kato, T. Watanabe, and H. Iwaoka, YokogawaElec. Corp, Nagano, Japanp. 1036

3B3.03 Controlled Part-to-Substrate Micro-Assemblyvia Electrochemical Modulation of Surface Energy -X. Xiong, Y. Hanein, W. Wang, D. Schwartz, and K. Bohringer,U. Washington, Seattle, WA, USAp. 1040

3B3.04 Ultrahydrophobic Surface Selectively Modifiedby Pulse Electrodeposition from Aqueous Dispersion ofPTFE Particles -T. Abe and M. Esashi, Tohoku U, Sendai, Japanp. 1044

3B3.05 Conformal Coating Process of Anti-StickingThin Film Using C4FB and Ar Plasma without AdditionalEquipment -C. Cho, W. Kim, and H. Shin, Samsung Elec. Co, Suwon, Koreap. 1048

3C3 High Aspect Ratio MEMSWednesday, June 13, 2001 (1:30 p.m. - 3:10 p.m.)

I i

3C3.01 Honeycomb-Shaped Deep-Trench Oxide PostsCombined with the SBM Technology for MicromachiningSingle-Crystal Silicon without Using SOI -S. Lee, S. Park, and D. Cho, Seoul Nat U, Seoul, Koreap. 1124

3C3.02 A Novel High Aspect Ratio Technology forMEMS Fabrication Using Standard Silicon Wafers -A. Bertz, R. Knofler, and T. Gessner*, Chemnitz U. Tech,Chemnitz, Germany, M. Kiichler, and (*), Fraunhofer IZM,Chemnitz, Germanyp. 1128

3C3.03 Pillar Structures with the Space of Sub-MicronsFabricated by the Macroporous Based Micromachining -H. Ohji, S. Izuo, and K. Tsutsumi, Mitsubishi Elec. Corp,Hyogo, Japan, P. French, Delft Tech. U., Delft, The Netherlandsp. 1132

3C3.04 Extension of Surface/Bulk Micromachining:One-Mask Fabrication Technology Enabling the Inte-gration of 6-DOF Inertial Sensors on a Single Wafer -S. Lee, B. Lee, K. Jung, J. Choi, T. Chung, and Y. Cho,Samsung Adv. Inst. Tech, Suwon, Koreap. 1136

3C3.05 Three-Dimensional Micromachining of SiliconNitride for Power Microelectromechanical Systems -S. Sugimoto, S. Tanaka, J. Li, T. Genda, R. Watanabe, andM. Esashi, Tohoku U, Sendai, Japanp. 1140

3D3 Electrochemical SensorsWednesday, June 13, 2001 (1:30 p.m. -3:10 p.m.)

3D3.01 Improved Recovery Time for ISFET GlucoseSensor -K. Park, Y. Lee, M. Lee, S. Choi, and B. Sohn, KyungpookNat. U, Taegu, Koreap. 1246

3D3.02 A Simple pH Detector Based on an OrganicField-Effect Transistor -C. Bartic, A. Campitelli, and S. Borghs, IMEC, Leuven,Belgium, B. Palan, Czech Tech. U, Prague, Czech Republicp. 1250

3D3.03 Single Drop Acid-Rain Analysis Using Micro-sensors -S. Wakida, M. Yamane, Y. Tsujimura, and X. Wu, Nat. Inst.Adv. Ind. Sci. Tech, Osaka, Japan, J. Liu, Beijing U. Aero.Astro, Beijing, Chinap. 1254

3D3.04 Study of Gas lonization for Micro-Devices -R. Longwitz, H. van Lintel, P. Renaud, and C. Hollenstein,Swiss Fed. Inst. Tech, Lausanne, Switzerland, R. Carr, SLAC,Stanford, CA, USAp. 1258

3D3.05 Thermolysin as a Recognition Element forMicrodetermination of Zinc(ll) Ions Based on theApoenzyme Reactivation Methods -I. Satoh, T. Ishigami, S. Oyanagi, and Y. lida, KanagawaInst. Tech, Atsugi, Japanp. 1262

4A1 CommercializationThursday, June 14, 2001 (8:30 a.m. - 10:00 a.m.)

4A1.01 Increasing Probability of a Success for High-TechStartup Companies -J. Bryzek <invited speaker>, Transparent Networks Inc.,Santa Clara, CA, USAp. 1268

4A1.02 Competitive Position of the Micro SystemTechnologies for Wavelength Handling in all-opticalNetworks for Telecom -E. Mounier and J. Eloy, Yole Dev, Lyon, Francep. 1276

4A1.03 Development of Micro-machined Three-axisSensors in Venture Business -K. Okada, N. Taniguchi, S. Takagi, and H. Itano, WAC0HCorp, Saitama, Japanp. 1280

4A1.04 MEMS Commercialization: Slow but Steady -R. Payne, Andover, MA, USAp. 1284

4B1 Materials CharacterizationThursday, June 14, 2001 (8:30 a.m. - 10:00 a.m.)

4B1.01 Friction and Wear Properties of Micro-structures in MEMS -W. Wang <invited speaker>, Y. Wang, H. Bao, and B. Xiong,Chinese Acad. Sci, Shanghai, China, M. Bao, Fudan U,Shanghai, Chinap. 1354

4B1.02 Electronic Transport Mechanisms in W03-BasedUltra-Thin Film Chemiresistive Sensors -S. Moulzolf and R. Lad, U. Maine, Orono, ME, USAp. 1358

4B1.03 Fast Thermal Characterization of Nano-LiterFluid Volumes -H. Ernst, A. Jachimowicz, B. Birkenmeier, B. Bohl, andG. Urban, U. Freiburg, Freiburg, Germanyp. 1362

4B1.04 Effect of Temperature on MechanicalProperties of Polysilicon -W. Sharpe Jr., M. Eby, and G. Coles, Johns Hopkins U,Baltimore, MD, USAp. 1366

4B1.05P The Design and Analysis of Shock ResistantMicrosystems (MEMS) -V. Srikar and S. Senturia, MIT, Cambridge, MA, USAp. 1370

4B1.06P In-Situ Mechanical Characterization of a100 Nanometer Thick Free Standing Aluminum Film inTEM Using MEMS Force Sensors -M. Haque and M. Saif, U. Illinois, Urbana, ll_ USAp. 1374

4B1.07P Tensile Testing System for Sub-MicrometerThick Films -T. Tsuchiya*, M. Shikida, and K. Sato, Nagoya U, Nagoya,Japan, (* and Toyota Inc., Japan)p. 1378

4B1.08P Fabrication, Test and Simulation of a ParyleneDiaphragm -W. Sim, B. Kim, and J. Park, Korean Inst. Sci. Tech, Seoul,Korea, D. Kim, and B. Choi, Sogang U, Seoul, Korea,K. Kim, K. Kwon, and S. Yang, Ajou U, Ajou, Koreap. 1382

4B1.09P Silicon, Parylene, and Silicon/ParyleneMicro-Needles for Strength and Toughness -P. Stupar and A. Pisano, U. California, Berkeley, CA, USAp. 1386

4B1.10P Uniaxial Stress Effect on Copper EnergyLevels in Silicon -Y. Kanda, T. Matsuura, K. Miyake, and T. Katsumata, Toyo U,Kawagoe, Japan, T. Yoshida, ShinEtsu Semicon. Co, Gunma,Japanp. 1390

4B1.11 P Fracture Properties of LPCVD Silicon Nitride ThinFilms from the Load-Deflection of Long Membranes -J. Yang, C. Peters, and 0. Paul, U. Freiburg, Freiburg, Germanyp. 1394

4B1.12P Temperature Dependent Thermal Conduc-tivities of CMOS Layers by Micromachined Thermal vander Pauw Test Structures -S. Hafizovic and 0. Paul, U. Freiburg, Freiburg, Germanyp. 1398

4B1.13P A Study on Nonlinear Torsional Character-istics of Polyimide Hinges -H. Miyajima, T. Arikawa, T. Hidaka, K. Tokuda, andK. Matsumoto, Olympus Opt. Co. Ltd, Tokyo, Japanp. 1402

4B1.14P Die-Level Characterization of Bulk-EtchedMEMS Using Resonant Ultrasound Spectroscopy -H. Guo and A. Lai, U. Wisconsin, Madison, Wl, USAp. 1406

4B1.15P The Silicon Optical Absorption CoefficientRevisited -R. Wolffenbuttel, Delft U. Tech, Delft, The Netherlandsp. 1410

4B1.16P n-Type B-SiC Piezoresistance Analysis underHigh Temperature and High Impurity Concentration -T. Toriyama, New Energy Ind. Tech. Dev. Org, Tokyo,Japan, S. Sugiyama, Ritsumeikan U, Shiga, Japanp. 1414

4B1.17P Strength and Leak Testing of PlasmaActivated Bonded Interfaces -M. Visser and A. Hanneborg, U. Oslo, Oslo, Norway,S. Weichel and R. de Reus, ADC Denmark, Farum, Denmarkp. 1418

4B1.18P Characteristics of Low Force Contact Processfor MEMS Probe Cards -T. Itoh, K. Kataoka, and T. Suga, U. Tokyo, Tokyo, Japanp. 1422

4B1.19P Analysis of Ultrasonic Wire Bonding by In-SituPiezoresistive Microsensors -J. Schwizer, 0. Brand, and H. Baltes, ETH Zurich, Zurich,Switzerland, M. Mayer, ESEC Cham, Switzerlandp. 1426

4B1.20P A Tactile Sensor Instantaneously EvaluatingFriction Coefficients -K. Nakamura and H. Shinoda, U. Tokyo, Tokyo, Japanp. 1430

4C1 RFMEMSThursday, June 14, 2001 (8:30 a.m. - 10:00 a.m.)

4C1.01 Integrated RF MEMS for Single Chip Radio -K. Grenier*, B. Barber, H. Safar, and P. Gammel <invitedspeaker>, Agere Sys, Murray Hill, NJ, USA, V. Lubecke,and M. Zierdt, Lucent Tech, Murray Hill, NJ, USA, P. Pons,and (*), LAAS-CNRS, Toulouse, Francep. 1528

4C1.02 Fabrication of a 94 GHz LIGA Klystrino -Y. Cheng, Synch. Rad. Res. Cent, Hsinchu, Taiwan,G. Scheitrum, G. Caryotakis, and A. Hasse, Stanford Lin.Ace. Cen, Menlo Park, CA, USA, L Song, U. California,Davis, CA, USA, B. Arfin, Arfin Associat, San Carlos, CA,USA, B. James, Comm. Pow. Ind, Palo Alto, CA, USAp. 1 532

4C1.03 Scalability of Capacitive RF MEMS Switches -M. Ulm, M. Reimann, T. Walter, and R. Muller-Fiedler,Robert Bosch GmbH, Stuttgard, Germany, E. Kasper,U. Stuttgart, Stuttgard, Germanyp. 1536

4C1.04 A 3-Voltage Actuated Micromachined RF Switchfor Telecommunications Applications -J. Park, K. Kang, N. Kang, Y. Kwon, and Y. Kim, SeoulNat. U, Seoul, Korea, C. Kim, and C. Song, Samsung Adv.Inst. Tech, Korea, C. Cheon, U. Seoul, Seoul, Koreap. 1540

4C1.05P A Novel MEMS LC Tank for RF VoltageControlled Oscillator (VCO) -S. Seok, C. Nam, W. Choi, and K. Chun, Seoul Nat. U,Seoul, Korea, S. Choi, YeungNam U, Kyongbuk, Koreap. 1544

4C1.06P Copper Interconnect Low-K Dielectric Post-CMOS Micromachining -X. Zhu, S. Santhanam, H. Lakdawala, H. Luo, and G. Fedder,Carnegie Mellon U, Pittsburgh, PA, USAp. 1548

4C1.07P A Micromachined Millimeter Wave PhaseShifter Using Semi-Lumped Elements -J. Park, H. Kim, K. Kang, Y. Kwon, and Y. Kim, SeoulNat. U, Seoul, Koreap. 1552

4C1.08P Reducing the Effect of Parasitic Capacitanceon MEMS Measurements -P. Rantakari, M. Koskenvuori.T. Lamminmaki, and I.Tittonen,Helsinki U. Tech, Helsinki, Finland, J. Kiihamaki, VTT, Finlandp. 1556

4C1.09P Performance and Dynamics of a RF MEMSSwitch -F. Plotz*, S. Michaelis, G. Fattinger, and R. Aigner,Infineon Tech. AG, Munich, Germany, R. Noe, and (*),U. Paderborn, Paderborn, Germanyp. 1560

4C1.10P Fabrication of a Solenoid-Type MicrowaveTransformer -Y. Choi, J. Yoon, B. Kim, E. Yoon, and C. Han, KAIST,Daejon, Koreap. 1564

4D1 Biomimetic ft Biomedical SystemsThursday, June 14, 2001 (8:30 a.m. - 10:00 a.m.)

4D1.01 Biomimetic Sensing Systems for AcousticMeasurement and Visual Tracking -W. Mitsuhashi <invited speaker>, U. Electro.-Commun,Tokyo, Japanp. 1650

4D1.02 Sound Source Localization Sensor withMimicking Barn Owls -N. Ono and S. Ando, U. Tokyo, Tokyo, Japanp. 1654

4D1.03 Multi-Parameter Catheter Sensor System withIntravascular Navigation -D. Tanase, J. Goosen, P. Trimp, and P. French, Delft U.Tech, Delft, The Netherlandsp. 1658

4D1.04 Exploring Insect Biomechanics with Micro-machined Force Sensors -M. Bartsch and T. Kenny, Stanford U, Stanford, CA, USA,W. Federle and R. Full, U. California, Berkeley, CA, USAp. 1662

4D1.05P The Mechanical Property of the Coiled Axonof Meissner Corpuscles for Human Tactile Sensing andits Application to a Biomimetic Tactile Sensor with aHelical Structure -T. Nara and S. Ando, U. Tokyo, Tokyo, Japanp. 1666

4A2 Optical MEMS 1Thursday, June 14,2001 (10:20 a.m.- 12:00 p.m.)

4A2.01 Micromirrors for Adaptive-Optics Arrays -M. Helmbrecht, U. Srinivasan, C. Rembe, R. Howe, andR. Muller, U. California, Berkeley, CA, USAp. 1290

4A2.02 Dual-Mode Micromirrors for Optical PhasedArray Applications -U. Krishnamoorthy, K. Li, and J. Heritage, U. California, Davis,CA, USA, K. Yu, D. Lee, and 0. Solgaard, Stanford U,Stanford, CA, USAp. 1294

4A2.03 Torsional Micromirrors with Lateral Actuators -V. Milanovic, Adriatic Res. Inst, Berkeley, CA, USA,M. Last, and K. Pister, U. California, Berkeley, CA, USAp. 1298

4A2.04 Micromachined Multi-Lever Linkage AngularMotion Amplifier -H. Lin, M. Wu, W. Fang, and R. Huang, Nat. Tsing Hua U,Hsinchu, Taiwanp. 1302

4A2.05 Mechanical Behavior of a Silicon Micro-OpicalAttenuator -K. Suzuki, T. Mercier, T. Oguma, and T. Shibuya, NEC Corp,Ibaraki, Japanp. 1306

4A2.06P High Resolution Micromachined ScanningMirror -H. Lin, H. Hu, W. Fang, and R. Huang, Nat. Tsing Hua U,Hsinchu, Taiwanp. 1310

4A2.07P Integrated Micromachined Tunable Lasersfor All-Optical Network Applications -X. Zhang, A. Liu, V. Murukeshan, and F. Chollet, NanyangTech. U, Singaporep. 1314

4B2 Flow ft Thermal SensorsThursday, June 14, 2001 (10:20 a.m. - 12:00 p.m.)

4B2.01 Sensitive Thermal Flow Sensor Based on aMicromachined Two-Dimensional Resistor Array -J. van Baar, R. Wiegerink, G. Krijnen, T. Lammerink, andM. Elwenspoek, U. Twente, Enschede, The Netherlandsp. 1436

4B2.02 A Novel Micromachined Flow Sensor UsingPeriodic Flapping Motion of a Planar Jet Impinging on aV-Shaped Plate -G. Lee, T. Kuo, and W. Wu, Nat. Cheng-Kung U, Tainan,Taiwanp. 1440

4B2.03 Time of Flight Micro Flow Sensor for AqueousFluids Using In-Situ Produced Tracer -J. Wu and W. Sansen, K. U. Leuven, Heverlee, Belgiump. 1444

4B2.04 AC-Driven Temperature-Balance Flow Sensor -T. Lammerink, N. Tas, J. van Honschoten, G. Krijnen,J. van Baar, and M. Elwenspoek, U. Twente, Enschede,The Netherlandsp. 1448

4B2.05 A Thermal Flow Sensor for Common RailInjection Systems -U. Schmid, G. Krotz, and R. Hoffmann, EADS, Deutschl.GmbH, Munich, Germany, D. Schmitt-Landsiedel, MunichU. Tech, Munich, Germanyp. 1452

4B2.06P High Resolution Level Sensors for HarshEnvironments -M. Sesterhenn, M. Schmitt, and H. Sandmaier*, U. Stuttgart,Stuttgard, Germany, H. Ashauer, G. Raffa, T. Strobelt, and(*), HSG-IMIT, Villingen-Schwenningen, Germanyp. 1456

4B2.07P A Micromachined Coriolis-Force-Based MassFlowmeter for Direct Mass Flow and Fluid DensityMeasurement -Y. Zhang and N. Najafi, Integr. Sens. Sys. Inc., Ypsilanti,Ml, USA, S. Tadigadapa, Penn U, PA, USAp. 1460

4B2.08P Thermal Flow Sensors for Very Small FlowRate-M. Ashauer, H. Scholz, R. Briegel, H. Sandmaier*, andW. Lang, HSG-IMIT, Villingen-Schwenningen, Germany,(* and U. Stuttgart, Stuttgard, Germany)p. 1464

4B2.09P A Novel Low Cost Lead-Frame Air FlowAnemometer -M. Dominguez, F. Masana, V. Jimenez, S. Bermejo, J. Amirola,and L Castaner, U. Politec. Cataluna, Barcelona, Spainp. 1468

4B2.10P Low-Cost Flow Transducer Fabricated withthe AMANDA-Process -D. Dittmann, R. Ahrens, Z. Rummler, K. Schlote-Holubek,and W. Schomburg, FZK, Karlsruhe, Germanyp. 1472

4B2.11 P A MEMS Surface Fence Sensor for Wall ShearStress Measurement in Turbulent Flow Areas -T. von Papen, H. Ngo, E. Obermeier, M. Schober,S. Pirskawetz, and H. Fernholz, Berlin U. Tech, Berlin,Germanyp. 1476

4B2.12P An Electronical Characterisation Method foran Acoustic and Thermal Flow Sensor -J. van Honschoten, T. Lammerink, H. de Bree, G. Krijnen,and M. Elwenspoek, U. Twente, Enschede, The Netherlandsp. 1480

4B2.13P A Resonant Temperature Sensor Based onElectrical Spring Softening -W. Hsu, J. Clark, and C. Nguyen, U. Michigan, Ann Arbor,Ml, USAp. 1484

4B2.14P Micromachined Inclinometer with HighSensitivity and Very Good Stability -S. Billat, H. Glosch, M. Kunze, F. Hedrich, J. Freeh, J. Auber,H. Sandmaier*, and W. Lang, HSG-IMIT, Villingen-Schwen-ningen, Germany, (* and U. Stuttgart, Stuttgard, Germany)p. 1488

4B2.15P Thermal and Gas-Sensing Properties of aMicromachined Thermal Conductivity Sensor -I. Simon and M. Arndt, Robert Bosch GmbH, Reutlingen,Germanyp. 1492

4B2.16P Thermal Performance and Stability of PolySi/Pt(Ni) Thin Film Temperature Sensors on GaAs -T. Lalinsky, P. Hrkut, Z. Mozolova, T. Kovacik, andA. Krajcer, Slovak Acad. Sci, Bratislava, Slovak Republicp. 1496

4B2.17P Temperature Sensors with High IrradiationResistance for Atomic Application -Y. Shwarts, V. Sokolov, M. Shwarts, and E. Venger, Nat.Acad. Sci. Ukraine, Kiev, Ukrainep. 1500

4C2 3D MEMSThursday, June 14,2001 (10:20 a.m.- 12:00 p.m.)

4C2.01 3D MEMS Fabrication Using Low-TemperatureWafer Bonding with Benzocyclobutene (BCB) -T. Chou and K. Najafi, U. Michigan, Ann Arbor, Ml, USAp. 1570

4C2.02 Novel Shaped Microstructures Processed byDeep X-Ray Lithography -S. Sugiyma and H. Ueno, Ritsumeikan U, Shiga, Japanp. 1574

4C2.03 Direct Microfabrication Using an X-RayMicro-Beam -T. Katoh and Y. Zhang, Sumitomo Heavy Ind. Ltd, Tokyo,Japan, Y. Kagoshima, Y. Tsusaka, and J. Matsui, HimejiInst. Tech, Hyogo, Japanp. 1578

4C2.04 Plastic Deformation Magnetic Assembly (PDMA)of 3-D Microstructures: Technology Development ftApplication -J. Zou, J. Chen, and C. Liu, U. Illinois, Urbana, IL, USAp. 1582

4C2.05 Fabrication of an Electrostatic Lens Array withSeparate Electrodes and Shield Membranes Using UV-Liga Process -H. Ono, K. Nagae, Y. Shimada, H. Maehara, T. Yagi,M. Muraki, and M. Okunuki, Canon Inc., Kanagawa, Japanp. 1586

4C2.06P A 3-Dimensional Wafer-Level StackingTechnology with Precise Vertical Interconnections toMEMS Applications -K. Park, K. Lee, T. Nakamura, Y. Yamada, I Morooka, Y. Igarashi,H. Kurino, and M. Koyanagi, Tohoku U, Sendai, Japanp. 1590

4C2.08P A Low Temperature, Wafer Level TransferIntegration Technology -F. Niklaus, P. Enoksson, P. Griss, E. Kalvesten, and G. Stemme,Royal Inst. Tech, Stockholm, Swedenp. 1594

4C2.09P Parallel Discharge with Partitioned ElectrodeArrays for Accelerated Batch Mode Micro-EDM -K. Takahata, Matsushita Co. Ltd, Osaka, Japan,Y. Gianchandani, U. Wisconsin, Madison, Wl, USAp. 1598

4C2.10P Fabrication Method for Out-of-Plane Coil bySurface Micromachining -M. Gel, S. Takeuchi, and I. Shimoyama, U. Tokyo, Tokyo,Japanp. 1602

4C2.11P Demonstration of Microscale Heat Exchangerfor a Silicon Micro Gas Turbine Engine -S. Sullivan, X. Zhang, A. Ayon, and J. Brisson, MIT,Cambridge, MA, USAp. 1606

4C2.12P Magnetic Flux Generator for BalancedMembrane Loudspeaker -J. Rehder and P. Rombach, Microtronic A/S, Lyngby,Denmark, 0. Hansen, Tech. U. Denmark, Lyngby, Denmarkp. 1610

4D2 Gas Sensors 1Thursday, June 14, 2001 (10:20 a.m. - 12:00 p.m.)

4D2.01 Wavelet Transform and Fuzzy ARTMAP BasedPattern Recognition for Fast Gas Identification Using aMicro-Hotplate Gas Sensor -E. Llobet, J. Brezmes, R. lonescu, X Vilanova, and X. Correig,U. Rovira i Virgili, Tarragona, Spain, S. Al-Khalifa, andJ. Gardner, U. Warwick, Coventry, UK, N. Barsan, Tuebingen U,Tuebingen, Germanyp. 1672

4D2.02 Improvement of Olfactory Video Camera -Gas/Odor Flow Visualization System -T. Tokuhiro, H. Ishida, T. Nakamoto, and T. Moriizumi,Tokyo Inst. Tech, Tokyo, Japanp. 1676

4D2.03 Diffusion Equation-Based Study of Thin FilmSemiconductor Gas Sensor - Response Transient -N. Matsunaga, G. Sakai, K. Shimanoe, and N. Yamazoe,Kyushu U, Fukuoka, Japanp. 1680

4D2.04 Selective Ammonia Exhaust Gas Sensor forAutomotive Applications -R. Moos, R. Muller, and C. Plog, Dornier GmbH, Friedrichs-hafen, Germany, A. Knezevic, H. Leye, and E. Irion, TEMICSensorsys, Kirchheim/Teck, Germany, T. Braun, K. Marquardt,and K. Binder, DaimlerChrysler AG, Stuttgard, Germanyp. 1684

4D2.05 SOI-Based Micro-Hotplate MicrocalorimeterGas Sensor with Integrated BiCMOS Transducer -J. Gardner and J. Covington, U. Warwick, Coventry, UK,F. Udrea, T. Dogaru, C. Lu, and W. Milne, Cambridge U,Cambridge, UKp. 1688

4D2.06P Solid State Dissolved Oxygen Sensor TestMatrix Using a Pulsed-Plasma Deposited PTFE Film -G. McLaughlin, K. Braden, B. Franc, and G. Kovacs,Stanford U, Stanford, CA, USAp. 1692

4D2.07P Highly Sensitive and Selective Gas Sensors Usingthe Polythiophen Derivatives Controlled the Temperature -Y. Sakurai and K. Natsukawa, Tech. Res. Inst. Osaka, Osaka,Japan, H. Jung, T. Inoguchi, T. Shimanouchi, M. Umakoshi,and R. Kuboi, Osaka U, Osaka, Japanp. 1696

4D2.08P Thermal Optimization of a Novel Micro GasSensor Array with Different Operating Temperatures -W. Chung, Dongseo U, Pusan, Korea, J. Lim, and D. Lee,Kyungpook Nat. U, Taegu, Koreap. 1700

4D2.09P A New Micro Sensor Array with Porous TinOxide Thin Films and Micro-Hotplate Dangled by Wiresin Air -D. Lee, Elec. Telecom. Res. Inst, Taejon, Korea, C. Shim,J. Lim, J. Huh, and D. Lee, Kyungpook Nat. U, Taegu, Koreap. 1704

4D2.10P A Novel Micro Gas Sensor Array UsingTemperature Gradient on the Single Glass -J. Lim, B. Joo, H. Jung, D. Lee, J. Huh, and D. Lee,Kyungpook Nat. U, Taegu, Korea, W. Chung, Dongseo U,Pusan, Koreap. 1708

4D2.11P A Data Acquisition System for a Hand-HeldElectronic Nose (H2EN) -H. Chueh, J. Hatfield, P. Wareham, K. Persaud, and P. Payne,UMIST, Manchester, UKp. 1712

4A3 Optical MEMS 2Thursday, June 14, 2001 (1:30 p.m. - 3:10 p.m.)

4A3.01 Fabrication and Experiments on Electro-magnetic Micromirror Array with Bulk Silicon MirrorPlate and Aluminum Spring -C. Ji and Y. Kim, Seoul Nat. U, Seoul, Koreap. 1320

4A3.02 Optical Switch Using Draw-Bridge Micro-mirror for Large Array Crossconnects -A. Liu, X. Zhang, and V. Murukeshan, Nanyang Tech. U,Singapore, Q. Zhang, Q. Zou, and S. Uppili, Inst. Microelec,Singaporep. 1324

4A3.03 A Novel Optical Scanner with Integrated Two-Dimensional Magnetostrictive Actuation and Two-Dimensional Piezoresistive Detection -T. Bourouina, E. Lebrasseur, G. Reyne, H. Fujita, andT. Masuzawa, U. Tokyo, Japan, A. Ludwig, and E. Quandt,CAESAR, Bonn, Germany, H. Muro, T. Oki, and A. Asaoka,Nissan Motor Co, Yokosuka, Japanp. 1328

4A3.04 4x4 Matrix Switch Based on MEMS Switchesand Integrated Waveguides -L Dellmann, W. Noell, and N. de Rooij, U. Neuchatel,Neuchatel, Switzerland, C. Marxer, Sercalo Microtech. Ltd,Schaan, Liechtenstein, K. Weible, Weible OpTech,Neuchatel, Switzerland, M. Hoffmann, U. Dortmund,Dortmund, Germanyp. 1332

4A3.05 Technology of Reflective Membranes for SpatialLight Modulators -S. Sakarya, G. Vdovin, and P. Sarro, Delft U. Tech, Delft,The Netherlandsp. 1336

4A3.06P A Latching, Bistable Optical Fiber SwitchCombining LIGA Technology with MicromachinedPermanent Magnets -K. Fischer, B. Chaudhuri, S. McNamara, H. Guckel,Y. Gianchandani, and D. Novotny, U. Wisconsin, Madison,Wl, USAp. 1340

4A3.07P Waveguiding in MEMS Compatible 3-D,Silicon Photonic Lattices -J. Fleming and S. Lin, Sandia Nat. Labs, Albuquerque, NM,USAp. 1344

4A3.08P Focal Length Control by MicrofabricatedPlanar Electrodes-based Liquid Lens (uPELL) -S. Kwon and L Lee, U. California, Berkeley, CA, USAp. 1348

4B3 Analysis of Fluid-Solid InteractionsThursday, June 14, 2001 (1:30 p.m. - 3:10 p.m.)

4B3.01 Compact Squeezed-Film Damping Model forPerforated Surface -T. Veijola, Helsinki U. Tech, Helsinki, Finland, I Mattila,VTT, Finlandp. 1506

4B3.02 Planar Micro-Fluidic Devices for ControlledVortex Generation -G. Lettieri, E. Verpoorte, and N. de Rooij, U. Neuchatel,Neuchatel, Switzerlandp. 1510

4B3.03 Study of Boiling Regimes and Transient SignalMeasurements in Microchannels -L. Zhang, J. Koo, L Jiang, K. Goodson, J. Santiago, andI Kenny, Stanford U, Stanford, CA, USAp. 1514

4B3.04 Fluid Filling into Microfabricated Reservoirs -F. Tseng, I. Yang, K. Lin, K. Ma, M. Lu, and C. Chieng, Nat.Tsing-Hua U, Hsinchu, Taiwanp. 1518

4B3.05 Mechanistic Model of Diffusion and Reactionin Thin Sensor Layers - The DIRMAS-Model -P. Boeker and 0. Wallenfang, U. Bonn, Bonn, Germany,G. Homer, HKR Sensorsys, Munich, Germanyp. 1522

4C3 Polymer MEMSThursday, June 14, 2001 (1:30 p.m. - 3:10 p.m.)

4C3.01 Application and Investigation of In-PlaneCompliant SU8-Structures for MEMS -V. Seidemann, S. Biitefisch, and S. Biittgenbach, Tech. U.Braunschweig, Braunschweig, Germanyp. 1616

4C3.02 Fabrication of Ultrathick Micromolds UsingJSR THB-430N Negativ UV Photoresist -F. Tseng and C. Yu, Nat. Tsing-Hua U, Hsinchu, Taiwanp. 1620

4C3.03 Fabrication of Complex Micro ChannelSystems Inside Optically-Transparent 3D Substrates byLaser Processing -W. Li and J. Qin, Chinese U. Hong Kong, Hong Kong, SAR,T. Mei, Chinese Acad. Sci, Anhui, Chinap. 1624

4C3.04 Innovative Concept for the Fabrication ofMicromechanical Sensor and Actuator Devices UsingSelectively Metallized Polymers -W. Eberhardt, T. Gerhausser, and M. Giousouf, HSG-IFZ,Stuttgard, Germany, H. Kiick, R. Mohr, and D. Warkentin,U. Stuttgart, Stuttgard, Germanyp. 1628

4C3.05 Photoplastic Shadow Masks for RapidResistless Multi-layer Micropatterning -G. Kim and J. Brugger, U. Twente, Enschede,The Netherlands, B. Kim, U. Tokyo, Tokyo, Japanp. 1632

4C3.06P A Novel UV-LIGA Process Using PMER as aMold Material for Optical Switch Application -K. Chae*, H. Kim, and S. Moon, Korea Inst. Sci. Tech,Seoul, Korea, S. Han, J. Pak, and (*), Korea U, Koreap. 1636

4C3.07P Micro Plastic Embossing Process: Experimentaland Theoretical Characterizations -X. Shen and L Lin, U. California, Berkeley, CA, USAp. 1640

4C3.08P Derivatization of Fluorinated Polymers andtheir Potential Use for the Construction of Biosensors -M. Keusgen, J. Glodek, P. Milka, and I. Krest, U. Bonn,Bonn, Germanyp. 1644

4D3 Gas Sensors 2Thursday, June 14, 2001 (1:30 p.m. - 3:10 p.m.)

4D3.01 Sensing Properties to Dilute Chlorine Gas ofIndium Oxide Based Thin Film Sensors Prepared by EBEvaporation -J. Tamaki, C. Naruo, Y. Yamamoto, and M. Matsuoka,Ritsumeikan U, Shiga, Japanp. 1718

4D3.02 Diffusion Equation-Based Analysis of Thin FilmSemiconductor Gas Sensor - Sensitivity Dependence onFilm Thickness and Operating Temperature -G. Sakai, N. Matsunaga, K. Shimanoe, and N. Yamazoe,Kyushu U, Fukuoka, Japanp. 1722

4D3.03 NO2 and Ozone Monitoring in an Urban Atmos-phere Using Pd/Ge/Pd/lnP(p) Pseudo Schottky Junctions -L. Talazac, F. Barbarin, C. Varenne, and L Mazet,U. Clermont II, Aubiere, France, S. Pellier, and C. Soulier,Reseau AtMO AUVERGNE, Clermont-Ferrand, Francep. 1726

4D3.04 High-Temperature NOx Sensor Based onStabilized Zirconia and ZnFe2O4 Electrode -S. Zhuiykov, M. Muta, N. Yamazoe, and N. Miura,Kyushu U, Fukuoka, Japan, T. Ono, and A. Kunimoto,Riken Corp, Saitama, Japanp. 1730

4D3.05 Trace Benzene Monitoring in the Outdoor Air:Comparative Results Between Measurements CarriedOut with an Innovative Approach and a Std. GC Tool -I. Elmi, E. Lanzi, and V. Poluzzi, ARPA, Bologna, Italy, L Dori,G. Cardinali, S. Nicoletti, S. Guerri, and S. Zampolli, CNR-LAMEL Inst, Bologna, Italy, A. Mastrogiacomo, Urbino U, Italyp. 1734

4D3.06P High H2 Sensing Performance of AnodicallyOxidized TiO2 Film Contacted with Pd -Y. Shimizu, N. Kuwano, T. Hyodo, and M. Egashira,Nagasaki U, Nagasaki, Japanp. 1738

4D3.07P A Selective Ethanol Sensor Device: TiO2 andW/Ti02 by a Novel Sol-Gel Technique -C. Garzella, E. Comini, E. Bontempi, L. Depero, andG. Sberveglieri, Brescia U, Brescia, Italy, C. Frigeri, CNR-MASPEC Inst, Parma, Italyp. 1742

4D3.08P Classification of Indoor Environmental GasesUsing Temperature Modulation of Two SnO2 SensingFilms on a Substrate -N. Choi, C. Shim, K. Song, D. Lee, J. Huh, and D. Lee,Kyungpook Nat. U, Taegu, Koreap. 1746

4D3.09P Thick Film Sensor Chip for CO Detection inPulsing Mode: Detection Mechanism, Design, andRealization -A. Vasiliev, A. Pisliakov, and A. Sokolov, RRC KurchatovInst, Moscow, Russiap. 1750

4D3.10P Evaluation of On-line Hot Flue GasMeasurements -L Uneus, L Ekedahl, I. Lundstrom, and A. Lloyd Spetz,Linkoping U, Linkoping, Sweden, M. Mattsson, and P. Ljung,Vattenfall Utveckling AB, Alvkarleby, Sweden, R. Wigren,and P. Martensson, AppliedSensor, Linkoping, Swedenp. 1754

4D3.11P Influence of the Gate Material andTemperature on the Diode Properties of Schottky DiodesBased on SiC in 02 or CO Ambient -S. Nakagomi, Y. Sanada, and H. Shinobu, IshinomakiSenshu U, Ishinomaki, Japan, L Uneus, I. Lundstrom,L Ekedahl, and A. Lloyd Spetz, Linkoping U, Linkoping,Swedenp. 1758

4D3.12P Hydrocarbon Detection Using M0S Capacitorsin a Temperature-Pulsed Mode -P. Kreisl, J. Schalwig, A. Friedberger, and G. Muller, EADSDeutschl. GmbH, Munich, Germanyp. 1762

4D3.13P Highly Sensitive Vapor Sensor Using anInductively Coupled Surface Acoustic Wave Sensor -J. Wagner, M. von Schickfus, and S. Hunklinger,U. Heidelberg, Heidelberg, Germanyp. 1766

4D3.14P Chemical Sensor Using Polarity ControlledFractal Surface -K. Hayashi, M. Ju, K. Hayama, and K. Toko, Kyushu U,Fukuoka, Japanp. 1770

4D3.15P Detection of Volatile Compounds Correlatedto Human Diseases through Breath Analysis withChemical Sensors -M. Fleischer, E. Simon, E. Rumpel, and H. Meixner,Siemens AG, Munich, Germany, H. Ulmer, AppliedSensor,Reutlingen, Germany, M. Harbeck, M. Wandel, C. Fietzek,and U. Weimar, U. Tuebingen, Tuebingen, Germanyp. 1774

4D3.16P Micro Membrane Reactor: A flow-throughMembrane for Gas Pre-Combustion -A. Splinter, J. Stiirmann, 0. Bartels, and W. Benecke,U. Bremen, Bremen, Germanyp. 1778