towerjazz high performance sige bicmos processes · towerjazz sige hbjt offers best in class sige...
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TowerJazz High Performance
SiGe BiCMOS processes
2
Comprehensive Technology Portfolio
Mixed-Signal Digital CMOS
0.35 µm
0.50 µm
BiCMOS, SiGe
Power/BCD BCD
RFCMOS RFCMOS and SOI CMOS
BCD
RFCMOS and SOI CMOS
Power/BCD
0.13µm
SiGe SiGe SiGe
0.25 µm
0.18/0.16/0.152 µm
0.13 µm
Mixed-Signal Digital CMOS
Mixed-Signal Digital CMOS
Mixed-Signal Digital CMOS
Mixed-Signal Digital CMOS
eNVM
Image Sensor (X-Ray & Visible)
Image Sensor (X-Ray & Visible)
eNVM
Image Sensor (X-Ray & Visible)
RFCMOS and SOI CMOS
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RF CMOS and SiGe BiCMOS
Cell Phone, WiFi TxRx Basestation, Specialty Wireless TV, Satellite, STB Tuners
High Performance SiGe
Optical Fiber Networks Automotive Radar 60 GHz WiFi, 24GHz Backhaul Light Peak and Thunderbolt GPS LNA
SOI Switch and SiGe Power Amplifiers
Power Amplifiers Antenna Switch PA Controllers
Complementary BiCMOS
Line Drivers DSL, HomePlug, ATE HDD PreAmp DAC, ADC
RF and HPA Applications and Technology
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Best-in-class SiGe, RF CMOS, RF models and Design Enablement
RF and Tuners Front-End Modules
mmWave High Performance Analog
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RF CMOS Controller Platform
5V, 0.18um optimized CMOS Up to 50% die size shrink vs. 0.25um 1.8V Logic, Bipolar, LDMOS options
SiGe PA, through-silicon-via (TSV), IPD
SiGe PA cells for WiFi and Cellular TSV for low-inductance ground 1.8/3.3/5V CMOS, high res options IPD (5um dual-Cu in development)
Platform for integration of FEM
Thin-Film SOI (best in class Ron-Coff) Thick-Film SOI for ease of integration 5V control, LNA, PA/Driver options
Models, design tools and IP
Example: PA Design Library (PADL) Example: 4T, 6T, 9T SOI Switch IP Analog / RF Design Services
Front-End Module Technology
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Best-in-class SiGe, RF CMOS, RF models and Design Enablement
Controller SOI Switch
Power Amplifier Design Services and IP
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Schematic of Key Features in SiGe BiCMOS platform
The SiGe HBJTs are embedded into complimentary
BiCMOS platforms offering high performance RF , analog
and digital performances.
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SiGe HBJT device structure
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The high-performance bipolar transistors are built “vertically”
meaning that the n-p-n structure is created perpendicularly from
the top of the wafer down.
TowerJazz High Speed SiGe Processes
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SBC18HA SBC18H2 SBC18H3 SBC13HA SBC13H3
Status Prod. Prod. Proto. Proto. Devel.
CMOS Voltages 1.8/3.3V 1.8/3.3V 1.8/3.3V 1.2/3.3V 1.2/3.3V
HS Bipolar
FT (GHz) 150 200 240 200 240
FMAX (GHz) 190 200 270 200 270
BVCEO (V) 2.2 1.9 1.6 1.9 1.6
Capacitor fF/µm2 2.8/5.6 2/4 2.8/5.6 2.8/5.6 2.8/5.6
Varactor Q at 20 GHz 10 NA 15 NA 15
LPNP Beta 32 7 30 7 30
There are numerous other SBC18 flavors in production with variations in back end configuration, selection of available devices etc. Presented data mainly from the SBC18H2/H3 flavors.
SiGe HBJT’s current and power gain
240 GHz Ft / 270 GHz Fmax devices in mass production.
High frequency performances sustained for wide collector
current range.
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0.1 1 10
0
50
100
150
200
250
SBC18H2
SBC18H3
FP
EA
K
T (
GH
z)
JC (mA/µm
2)
VCB
= 0.5V
FMEAS
=20GHz
3µm Emitter 122 Device
0.1 1 10
0
50
100
150
200
250
300
SBC18H2
SBC18H3
FP
EA
K
MA
X (
GH
z)
JC (mA/µm
2)
VCB
= 0.5V
FMEAS
=20GHz
3µm Emitter 122 Device
SiGe HBJT’s gain vs DC power density
TowerJazz Devices are optimized for low power consumption.
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0.1 1 10
5
10
15
20 SBC18H2
SBC18H3
70% Lower Power
UG a
t 2
8G
Hz (
dB
)
DC Power Density (mW/µm2)
0.1 1 10
0
5
10
15
20
SBC18H2
SBC18H3
h2
1 a
t 2
8G
Hz (
dB
)
DC Power Density (mW/µm2)
35% Lower Power
SiGe HBJT’s Noise
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0 10 20 30 40 50 60 70 80 90 1000
1
2
3
4
5
6
7
8
9
10
SBC18H2
SBC18H3
NF
MIN
(d
B)
Frequency (GHz)
-1.3dB
0 2 4 6 8 10 12 14 16 18
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.13x20 µm Single Emitter, Dual Base, Dual Collector
40 GHz
32 GHz
20 GHz
NF
MIN
(d
B)
IC (mA)
8 GHz
SBC18H4 minimum noise figure at 20Ghz is measured
less than 1dB and at 40GHz at only 2dB.
NFMIN is flat across various frequency ranges.
Circuit examples at ~100GHz: LNAs
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5
6
7
8
9
10
11
12
13
14
15
70 75 80 85 90 95 100 105 110
Me
asu
red
Re
ceiv
er
NF
(dB
)
Input RF Frequency (GHz)
Receiver NF - Element 1 (H3)Receiver NF - Element 2 (H3)Receiver NF - Element 3 (H3)Receiver NF - Element 4 (H3)Receiver NF - Element 1 (H2)Receiver NF - Element 2 (H2)Receiver NF - Element 3 (H2)Receiver NF - Element 4 (H2)
0
5
10
15
20
25
30
35
40
70 75 80 85 90 95 100 105 110
Me
asu
red
Re
ceiv
er
Ga
in (
dB
)
Input RF Frequency (GHz)
Receiver Gain - Element 1 (H3)Receiver Gain - Element 2 (H3)Receiver Gain - Element 3 (H3)Receiver Gain - Element 4 (H3)Receiver Gain - Element 1 (H2)Receiver Gain - Element 2 (H2)Receiver Gain - Element 3 (H2)Receiver Gain - Element 4 (H2)
SBC18H2
Broad band mm-wave LNAs fabricated in SBC18H2 and SBC18H3 4 identical LNAs built for a 4-channel W-band phased-array receiver Nearly 30dB of gain above noise floor at 85GHz Almost perfect matching between LNAs
RF Grounding:
Deep Silicon Vias vs. Through Silicon Vias
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Deep Silicon Vias and Through Silicon Vias are available for enhanced RF grounding.
Metal 1
Backside Metallization
Through-Silicon Vias
~100um
Deep Silicon Vias
~10um
Metal 1
Backside Metallization
p++ handle wafer
p- Epi
emitter
collector
~15
0u
m
Bipolar Roadmap
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next generation (SBC18H4) is in final development
stage ,Fmax=350Ghz , improved noise figure.
SiGe NPN on thick film SOI under development.
1 10
0
100
200
300
SBC18H2
SBC18H3
SBC18H4 (prototype)
FP
EA
K
MA
X (
GH
z)
JC (mA/µm
2)
VCB
= 0.5V
FMEAS
=20GHz
3µm Emitter 122 Device
0 10 20 30 40 50
0
1
2
3
4
5
SBC18H2
SBC18H3
SBC18H4 (Prototype)
NF
MIN
(d
B)
Frequency (GHz)
0.13x20um 122 Device
VBE
=0.825V
Summary
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TowerJazz offer SiGe HBJT devices on 0.35µm, 0.18µm
and 0.13µm technology nodes.
TowerJazz SiGe HBJT offers Best in class SiGe Speed /
Power and Best in class Noise.
The SiGe HBJTs are embedded into complimentary
BiCMOS platforms offering high performance RF, analog
and digital performances.
www.towerjazz.com
Complete SBC18H3 Device Roster
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Family Device Characteristics
CMOS 1.8V CMOS Model-exact copy of all other TJ 0.18um CMOS
3.3V CMOS
Bipolar HS NPN 240 GHz FT / 280 GHz FMAX
STD NPN 55GHz FT / 3.2V BVCEO
LPNP b=35
Resistors Poly 235 W/sq and 1000 W/sq
Metal 25 W/sq TiN on M3
Capacitors Single MIM 2 or 2.8 fF/µm2
Stacked MIM 4 or 5.6 fF/µm2
Varactors 1.8V MOS Q @ 20GHz = 20
Hyper-abrupt junction Q @ 20GHz =15, Tuning Ratio = 21%
RF Diodes p-i-n Isolation <-15dB, Insertion loss > -3.5dB at 50GHz
Schottky FC > 800 GHz
SiGe HBJT basic layout-122 configuration
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AA, EP
BP SC
AREA2
XN
AA
WN
EW
WN
N+ for Nsub
WN
N+ for Nsub STI STI
SC Implant
SiGe-Based layer
EW
Emitter Poly
Collector Collector Emitter Base Base
Native P-sub
WN
N+ for Nsub
WN
N+ for Nsub STI STI
SC Implant
SiGe-Based layer
EW
Emitter Poly
Collector Collector Emitter Base Base
Native P-sub