Total dose test for commercial off−the shelf Total dose test for commercial off−the shelf components to be used in space experiments: A components to be used in space experiments: A

survey on current technologiessurvey on current technologies

M. Menichelli, R.Battiston, S.Bizzaglia, S.Blasko, L.Di Masso, A.Papi,G.Scolieri.

INFN Sez. di PerugiaG.Castellini, A.Gabbanini, M.Tesi.

CNR−IROE Firenze

OverviewOverview

A Introduction to the program

A The test procedure

A Results on Diodes

A Results on BJTs

A Results on MOSFETs

A Results on Operational Amplifiers

A Results on other components

Introduction to the programIntroduction to the program

A The total dose test that will be shown are performed in order to use COTS in the construction of power supply and control electronics for particle physics space experiments (i.e. AMS and Pamela)

A This work has been funded by ASI−INFN joint program (5%) for developement of power supply to be used in space

A This Program has been performed in collaboration with CAEN Aerospace (Viareggio−Italy).

The test procedureThe test procedure

A Irradiation using a Co60 Gamma ray Source (1.25 MeV energy at dose rate of 3.9 krad/h following the ESA/SCC 22900 specifications) in ENEA Casaccia.

A We tested electronic components at the total dose of 30 krad ( three samples each). Making measurements of relevant parameters at 0 krad (before testing), 3 krad, 10 krad, 30 krad.

A The tested components have been annealed. (168 hours of operation at 25 C) During annealing measurement of relevant parameters has been taken after 12, 24 and 168 hours.

A After annealing, aging has been performed (168 hours of continous operation at 85 C). After aging final measurement of relevant parameters have been performed.

DiodesDiodes

A We tested 3 kind of diodesA Zener diodes

A Schottky diodes

A p−n junction diodes

Zener diodesZener diodes

A We tested:A BZX285C5V1,BZX285C12, BZX285C15 from

Philips

A UDZ5.6,UDZ12,UDZ15 from Rohm

Reverse voltage for Philips diodesReverse voltage for Philips diodes

Reverse voltage for Rohm diodesReverse voltage for Rohm diodes

Conclusions for Zener diodesConclusions for Zener diodes

A No failure for any diode tested

A reverse voltage very stable (less than 2% fluctuations)

Schottky diodesSchottky diodes

A We tested:1N5617, 1N5822, MBR1545, B2515, MBR3045 from Motorola

Forward Drop Forward Drop

Reverse currentReverse current

Conclusions on Schottky diodesConclusions on Schottky diodes

A Forward drop stable within 10%

A Reverse current stable within 40%

A B2515 stopped operation (all samples tested after 12 hr of annealing

p−n juction diodes (medium p−n juction diodes (medium voltage)voltage)

A We tested: ES2B from Vishay,, LL4148 from Philips, 1SS353 from Rohm, BAS16 and BAS21 from Siemens.

Forward dropForward drop

Reverse currentReverse current

Conclusions on p−n junction Conclusions on p−n junction diodesdiodes

A After 12 hr annealing LL4148 stopped functionality (all samples)

A Forward drop stable at 2%

A Reverse current variations within 25% except 1SS353 that showed a decrease in current during each step of the test

BJT transistorsBJT transistors

A We measured 3 npn and 6 pnp transistors

A The npn were MMBTA42, MJD200, MMBT3904LT1 all by Motorola

A The pnp were MMBTA92, MJD210, MJD350, 2N5401, MMBT3904LT1 by Motorola and BD434 by Philips

hhFEFE

for npn for npn

hhFEFE

for pnp for pnp

Conclusion for BJT transistorsConclusion for BJT transistors

A hFE

is very sensive to total dose expecially

on npn transistors

A usually transistor with higher gain are more sensitive

MOS transistorsMOS transistors

A We tested 10 MOSFET transistors 9 N−channel and 1 P−channel. We measured V

th , Idss(OFF)

and the Rds (ON).

A N−channel transistor were:MTD20N06HD by Motorola, FDS 9936A, FDS 6680A, FDS 6612A, FDS 6690A by Fairchild, SUP60N06 by Vishay, IRF540, IRF640 and IRF740 by International Rectifiers.

A P−channel transistor was:NDP6020P by Motorola

VVthth measurement measurement

Idss(OFF) measurementIdss(OFF) measurement

Rds(ON) measurementRds(ON) measurement

Conclusions on MOSFETsConclusions on MOSFETs

A Vth

and Idss(OFF) are very sensitive to

radiation expecially in some cases (e.g. MTD20N06HD)

A Rds(ON) is stable within 10% in all measured samples

Results on OP−AMPsResults on OP−AMPs

A We tested 5 op−amps:LF347 and LM6142 from National Semiconductors, OP471, OP17 and OP249 from Analog devices.

A LM6142 is a dual low power rail−to−rail op−amp

A LF347,OP17 and OP249 are JFET amplifier.

A OP471 is bipolar amplifier

A We measured offset currents, power consumtion and open loop gain

Relative variations for offset Relative variations for offset currentscurrents

Relative variation of open loop Relative variation of open loop gaingain

Conclusions on op−ampsConclusions on op−amps

A JFET op−amp OP17 and OP249 had the largest degradation while LF347 was stable.

A The other 2 op−amps have not major degradation

Other componentsOther components

A We tested 2 current sensors: LM3812−7.0 and LM3813−1.0

A 1 CAN controller

A 2 CAN tranceivers

A 1 EEPROM

A 1 PLD

Current SensorsCurrent Sensors

A LM3812−7.0 and LM3813−1.0

A Both ok after 3 krad they started drawing 4−5 times the usual currents after 10 krad but they both remain functional shutdown mode did not reduce their current significantly

A At 30 krad they draw more then 100 times their usual current LM3812 was not functional while LM3813 was still functional

A After annealing and ageing LM3813 completely recovered its usual power consumption, LM3812 recovered its functionality and power consumption in operating mode but its shutdown mode consumes 10 times more the operating mode

CAN controllerCAN controller

A SJA1000 by Philips

A At 30 krad its power consumption raised 30 times but remained functional

A After annealing and ageing we observed a reduction in consumtion by about 20% and no loss of functionality

CAN tranceiversCAN tranceivers

A We tested 82C250 and 82C251

A Power consumption and functionality remain the same during all phases of the test

PLDPLD

A We tested ispLSI2032 from Lattice

A After 3 krad device is Ok

A After 10 krad power consumption increase by a factor 3 and it was no longer possible to program it

A After 30 krad was impossible to read the data and program it power consumption had a further increase by a factor 3 recovery of the device was impossible

EEPROMEEPROM

A We tested Am29F010 from AMD

A Ok after 3 krad

A After 10 krad took longer to write on it, data were readable power consumption increased a factor 20

A After 30 krad the device was impossible to program but data still readable and power consumption increased an additional factor 50.

A After annealing and aging data were still readable power consumtion decreases by 35 % but still impossible to program it