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________________________________________________________________ Maxim Integrated Products 1

TQFN

TOP VIEW

*EXPOSED PAD. CONNECT EP TO GND.

4

5

3

2

12

11

13

LOBI

AS

GND

GND

14

V CC

GND

IF-

IF+

GND

6 7

GND

9 10

20 19 17 16

GND

GND

GND

GND

LO

GND

V CC

GND

8

18

GND

1

EP*

15 VCCRF

+

MAX2051

19-4582; Rev 0; 4/09

PART TEMP RANGE PIN-PACKAGE

MAX2051ETP+ -40°C to +85°C 20 Thin QFN-EP*

MAX2051ETP+T -40°C to +85°C 20 Thin QFN-EP*

®

+*

http://www.maxim-ic.com.cn

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

DC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, VCC = +4.75V to +5.25V, no input AC signals. TC = -40°C to +85°C, unless otherwise noted. Typical val-ues are at VCC = +5.0V, TC = +25°C, unless otherwise noted.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functionaloperation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure toabsolute maximum rating conditions for extended periods may affect device reliability.

Note 1: Based on junction temperature TJ = TC + (θJC x VCC x ICC). This formula can be used when the temperature of the exposedpad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junctiontemperature must not exceed +150°C.

Note 2: Junction temperature TJ = TA + (θJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB isknown. The junction temperature must not exceed +150°C.

Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com.cn/thermal-tutorial.

Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.

VCC to GND...........................................................-0.3V to +5.5VRF, LO to GND.........................................................-0.3V to 0.3VIF+, IF-, LOBIAS to GND ............................-0.3V to (VCC + 0.3V)RF, LO Input Power ........................................................+20dBmRF, LO Current (RF and LO is DC shorted to GND

through balun).................................................................50mAContinuous Power Dissipation (Note 1) ........................2100mW

θJA (Notes 2, 3)..............................................................+33°C/WθJC (Note 3)........................................................................8°C/WOperating Case Temperature Range

(Note 4) ...................................................TC = -40°C to +85°CJunction Temperature ......................................................+150°CStorage Temperature Range .............................-65°C to +150°CLead Temperature (soldering, 10s) .................................+300°C

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage VCC 4.75 5 5.25 V

Supply Current ICC Total supply current 105 130 mA

RECOMMENDED AC OPERATING CONDITIONSPARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RF Frequency fRF (Notes 5, 6) 850 1550 MHz

LO Frequency fLO (Note 5) 1200 2250 MHz

IF Frequency fIFMeeting RF and LO frequency ranges; IFmatching components affect the IFfrequency range (Note 5)

50 1000 MHz

LO Drive Level PLO -3 +9 dBm

http://www.maxim-ic.com.cn/thermal-tutorial

_______________________________________________________________________________________ 3


Conversion Power Loss LCfRF = 1200MHz, fLO = 1700MHz,fIF = 500MHz, TC = +25°C (Notes 8, 9)

7.4 9 dB

Conversion Power LossTemperature Coefficient

TCL TC = -40°C to +85°C 0.01 dB/°C

Conversion Power Loss Variationvs. Frequency

ΔLC fLO = 1200MHz to 2250MHz ± 0.5 dB

Noise Figure NFSSB Single sideband 7.8 dB

Input 1dB Compression Point IP1dB 24 dBm

Third-Order Input Intercept Point IIP3

V C C = + 5.0V ,fR F1 = 1200M H z,fR F2 = 1201M H z,P R F = 0d Bm tone,fLO = 1562M H z, P LO = 0d Bm , TC = +25°C,fIF = 362M H z ( N otes 8, 9)

33 35 dBm

PRF =-14dBm

73 88

PRF =-10dBm

69 84

Single tone, fRF =1200MHz,fIF = 192.5MHz to 857.5MHz,fLO = 1392.5MHz to 2057.5MHz,PLO = +3dBm, resultantfSPUR = 1007.5MHz to 342.5MHz(Notes 8, 9, 10)

PRF =0dBm

59 74

PRF =-14dBm

74 78

PRF =-10dBm

70 74

2RF-LO Spurious Rejection 2 x 1

Single tone, fRF =1200MHz,fIF = 857.5MHz to 1000MHz,fLO = 2057.5MHz to 2200MHz,PLO = +3dBm, resultantfSPUR = 342.5MHz to 200MHz(Notes 8, 9, 10)

PRF =0dBm

60 64

dBc

PRF =-14dBm

68 79

PRF =-10dBm

64 75

Single tone, fRF =1200MHz,fIF = 97.5MHz to 430MHz,fLO = 1297.5MHz to 1630MHz,PLO = +3dBm, resultantfSPUR = 195MHz to 860MHz(Notes 8, 9, 10)

PRF =0dBm

54 65

PRF =-14dBm

71.5 77.4

PRF =-10dBm

67.5 73.4

2LO-2RF Spurious Rejection 2 x 2

Single tone, fRF =1200MHz,fIF = 430MHz to 525MHz,fLO = 1630MHz to 1725MHz,PLO = +3dBm, resultantfSPUR = 860MHz to 1050MHz(Notes 8, 9, 10)

PRF =0dBm

57.5 63.4

dBc

AC ELECTRICAL CHARACTERISTICS (DOWNCONVERTER OPERATION)(Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = 0dBm, fRF = 1000MHz to 1250MHz, fLO = 1200MHz to 2250MHz, fIF = 50MHz to 1000MHz, fRF < fLO, TC = -40°C to +85°C.Typical values are at VCC = +5.0V, PRF = 0dBm, PLO = 0dBm, fRF =1200MHz, fLO = 1700MHz, fIF = 500MHz, TC = +25°C, unlessotherwise noted.) (Note 7)

4 _______________________________________________________________________________________

AC ELECTRICAL CHARACTERISTICS (DOWNCONVERTER OPERATION) (continued)(Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = 0dBm, fRF = 1000MHz to 1250MHz, fLO = 1200MHz to 2250MHz, fIF = 50MHz to 1000MHz, fRF < fLO, TC = -40°C to +85°C.Typical values are at VCC = +5.0V, PRF = 0dBm, PLO = 0dBm, fRF =1200MHz, fLO = 1700MHz, fIF = 500MHz, TC = +25°C, unlessotherwise noted.) (Note 7)


PRF =-14dBm

87.5 101

PRF =-10dBm

79.5 933LO-3RF Spurious Rejection 3 x 3

Single tone, fRF = 1200MHz,50MHz < fIF < 1000MHz,1250MHz < fLO < 2200MHz(Notes 8, 9)

PRF = 0dBm 59.5 73

dBc

LO Leakage at RF Port PLO = +3dBm (Notes 6, 8) -33.5 -27.5 dBm

LO Leakage at IF Port PLO = +3dBm (Notes 8, 9) -26.3 -22.9 dBm

RF-to-IF Isolation fR F = 1200M H z, P L O = + 3d Bm ( N otes 8, 9) 24 51 dB

RF Input Impedance ZRF 50 Ω

RF Input Return LossLO on and IF terminated with a matchedimpedance

12 dB

LO Input Impedance ZLO 50 Ω

LO Input Return LossRF and IF terminated with a matchedimpedance (Note 11)

11 dB

IF Output Impedance ZIFNominal differential impedance at the IC’sIF outputs

50 Ω

IF Output Return Loss

RF ter m i nated i nto 50Ω , LO d r i ven b y 50Ω sour ce, IF tr ansfor m ed to 50Ω si ng l e- end ed usi ng exter nal com p onents show n i n theTyp i cal Ap p l i cati on C i r cui t

15 dB

_______________________________________________________________________________________ 5

AC ELECTRICAL CHARACTERISTICS (UPCONVERTER OPERATION)(Typical Application Circuit, RF and LO ports are driven from 50Ω sources, fRF < fLO. Typical values are at VCC = +5.0V, PIF = 0dBm,PLO = 0dBm, fRF = 1250MHz, fLO = 1600MHz, fIF = 350MHz, TC = +25°C, unless otherwise noted.) (Note 7)


Conversion Power Loss LC 7.5 dB

Third-Order Input InterceptPoint

IIP3 fIF1 = 350M H z, fIF2 = 351M H z, P IF = 0d Bm /tone 33.4 dBm

LO-2IF Spurious Rejection 61 dBc

LO+2IF Spurious Rejection 63.3 dBc

LO-3IF Spurious Rejection 78 dBc

LO+3IF Spurious Rejection 79 dBc

LO Leakage at RF Port PLO = +3dBm -35.7 dBm

IF Leakage at RF Port -52 dBm

RF Return Loss 12.3 dB

IF Input Return Loss fLO = 1200MHz 18 dB

Note 5: Operation outside this range is possible, but with degraded performance of some parameters. See the Typical OperatingCharacteristics section.

Note 6: Not production tested.Note 7: All values reflect losses of external components, including a 0.6dB loss at fIF = 350MHz and a 0.8dB loss at

fIF = 1000MHz due to the 1:1 transformer. Output measurements were taken at IF outputs of the Typical Application Circuit.Note 8: Guaranteed by design and characterization.Note 9: 100% production tested for functionality.Note 10: Additional improvements (of up to 4dB to 6dB) in spurious responses can be made by increasing the LO drive to +6dBm.Note 11: The LO return loss can be improved by tuning C9 to offset any parasitics within the specific application circuit. Typical

range of C9 is 10pF to 50pF.

6 _______________________________________________________________________________________

CONVERSION LOSS vs. IF FREQUENCY(DOWNCONVERSION MODE)

MAX

2051

toc0

1

IF FREQUENCY (MHz)

CONV

ERSI

ON L

OSS

(dB)

810620430240

6

7

8

9

10

TC = -40°C

TC = +25°CTC = +85°C

550 1000


MAX

2051

toc0

2

IF FREQUENCY (MHz)

CONV

ERSI

ON L

OSS

(dB)

810620430240

6

7

8

9

10

550 1000

PLO = -3dBm, 0dBm, +3dBm


MAX

2051

toc0

3

IF FREQUENCY (MHz)

CONV

ERSI

ON L

OSS

(dB)

810620430240

6

7

8

9

10

550 1000

VCC = 4.75V, 5.0V, 5.25V

IIP3 vs. IF FREQUENCY(DOWNCONVERSION MODE)

MAX

2051

toc0

4

IIP3

(dBm

)

33

32

31

34

35

36

37

30

IF FREQUENCY (MHz)81062043024050 1000

TC = -40°C

TC = +25°C, +85°C

PRF = 0dBm/TONE

MAX

2051

toc0

5


IIP3

(dBm

)

33

32

31

34

35

36

37

30

IF FREQUENCY (MHz)81062043024050 1000

PRF = 0dBm/TONE


MAX

2051

toc0

6


IIP3

(dBm

)

33

32

31

34

35

36

37

30

IF FREQUENCY (MHz)81062043024050 1000

PRF = 0dBm/TONE

VCC = 5.0V

VCC = 5.25V

VCC = 4.75V

2RF-LO RESPONSE vs. IF FREQUENCY(DOWNCONVERSION MODE)

MAX

2051

toc0

7

IF FREQUENCY (MHz)

2RF-

LO R

ESPO

NSE

(dBc

)

81062043024050

60

70

80

90

50 1000

TC = -40°C

TC = +25°C

TC = +85°C

PRF = 0dBm

MAX

2051

toc0

8

2RF-LO RESPONSE vs. IF FREQUENCY(DOWNCONVERSION MODE)

IF FREQUENCY (MHz)

2RF-

LO R

ESPO

NSE

(dBc

)

81062043024050

60

70

80

90

50 1000

PRF = 0dBm

PLO = +3dBm

PLO = 0dBm

PLO = -3dBm

MAX

2051

toc0

92RF-LO RESPONSE vs. IF FREQUENCY

(DOWNCONVERSION MODE)

IF FREQUENCY (MHz)

2RF-

LO R

ESPO

NSE

(dBc

)

81062043024050

60

70

80

90

50 1000

PRF = 0dBm

VCC = 4.75V, 5.0V, 5.25V

(Typical Application Circuit, Downconversion mode, VCC = +5.0V, PLO = 0dBm, PRF = 0dBm, fRF = 1200MHz, LO is high-sideinjected, TC = +25°C, unless otherwise noted.)


_______________________________________________________________________________________ 7

MAX

2051

toc1

0

2LO-2RF RESPONSE vs. IF FREQUENCY(DOWNCONVERSION MODE)

IF FREQUENCY (MHz)

2LO-

2RF

RESP

ONSE

(dBc

)

81062043024045

55

65

75

85

50 1000

PRF = 0dBm

TC = -40°C, +25°C, +85°C

MAX

2051

toc1

1


IF FREQUENCY (MHz)

2LO-

2RF

RESP

ONSE

(dBc

)

81062043024045

55

65

75

85

50 1000

PRF = 0dBm

PLO = +3dBm

PLO = 0dBmPLO = -3dBm


MAX

2051

toc1

2

IF FREQUENCY (MHz)

2LO-

2RF

RESP

ONSE

(dBc

)

81062043024045

55

65

75

85

50 1000

PRF = 0dBm

VCC = 4.75V, 5.0V, 5.25V

MAX

2051

toc1

3


IF FREQUENCY (MHz)

3LO-

3RF

RESP

ONSE

(dBc

)

81062043024045

55

65

75

85

50 1000

PRF = 0dBm

TC = -40°C, +25°C, +85°C

MAX

2051

toc1

4


IF FREQUENCY (MHz)

3LO-

3RF

RESP

ONSE

(dBc

)

81062043024045

55

65

75

85

50 1000

PRF = 0dBm


MAX

2051

toc1

5


IF FREQUENCY (MHz)

3LO-

3RF

RESP

ONSE

(dBc

)

81062043024045

55

65

75

85

50 1000

PRF = 0dBm

VCC = 4.75V, 5.0V, 5.25V

LO LEAKAGE AT IF PORT vs. LO FREQUENCY(DOWNCONVERSION MODE)

MAX

2051

toc1

6

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

2010182016301440

-40

-30

-20

-10

-501250 2200

TC = -40°C, +25°C, +85°C

MAX

2051

toc1

7

LO LEAKAGE AT IF PORT vs. LO FREQUENCY(DOWNCONVERSION MODE)

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

2010182016301440

-40

-30

-20

-10

-501250 2200

PLO = -3dBm, 0dBm, +3dBm MAX

2051

toc1

8LO LEAKAGE AT IF PORT vs. LO FREQUENCY


LO FREQUENCY (MHz)

LO L

EAKA

GE A

T IF

POR

T (d

Bm)

2010182016301440

-40

-30

-20

-10

-501250 2200

VCC = 4.75V, 5.0V, 5.25V


8 _______________________________________________________________________________________

RF-TO-IF ISOLATION vs. LO FREQUENCY(DOWNCONVERSION MODE)

MAX

2051

toc1

9

LO FREQUENCY (MHz)

RF-T

O-IF

ISOL

ATIO

N (d

B)

2010182016301440

40

50

60

70

80

20

30

1250 2200

TC = -40°CTC = +25°C

TC = +85°C

fRF = 1200MHz

MAX

2051

toc2

0


LO FREQUENCY (MHz)

RF-T

O-IF

ISOL

ATIO

N (d

B)

2010182016301440

40

50

60

70

80

20

30

1250 2200


fRF = 1200MHz

MAX

2051

toc2

1


LO FREQUENCY (MHz)

RF-T

O-IF

ISOL

ATIO

N (d

B)

2010182016301440

40

50

60

70

80

20

30

1250 2200

VCC = 4.75V, 5.0V, 5.25V

fRF = 1200MHz

LO LEAKAGE AT RF PORT vs. LO FREQUENCY(DOWNCONVERSION MODE)

MAX

2051

toc2

2

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

-40

-35

-30

-25

-20

-50

-45

LO FREQUENCY (MHz)20101820163014401250 2200

TC = -40°C

TC = +25°C

TC = +85°C

MAX

2051

toc2

3


LO L

EAKA

GE A

T RF

POR

T (d

Bm)

-40

-35

-30

-25

-20

-50

-45

LO FREQUENCY (MHz)20101820163014401250 2200


MAX

2051

toc2

4


LO L

EAKA

GE A

T RF

POR

T (d

Bm)

-40

-35

-30

-25

-20

-50

-45

LO FREQUENCY (MHz)20101820163014401250 2200

VCC = 4.75V, 5.0V, 5.25V

RF PORT RETURN LOSS vs. RF FREQUENCY (DOWNCONVERSION MODE)

MAX

2051

toc2

5

RF FREQUENCY (MHz)

RF P

ORT

RETU

RN L

OSS

(dB)

1400130012001100

20

15

10

5

0

30

25

1000 1500

fIF = 200MHz


MAX

2051

toc2

6

207517501425

15

10

5

0

201100 2400

RF PORT RETURN LOSS vs. LO FREQUENCY (DOWNCONVERSION MODE)

LO FREQUENCY (MHz)

RF P

ORT

RETU

RN L

OSS

(dB)

fIF = 50MHz TO 1000MHz

fRF = 1400MHz fRF = 1300MHz

fRF = 1100MHzfRF = 1200MHz

MAX

2051

toc2

7

810620430240

25

20

15

10

5

0

3050 1000

IF PORT RETURN LOSS vs. IF FREQUENCY (DOWNCONVERSION MODE)

IF FREQUENCY (MHz)

IF P

ORT

RETU

RN L

OSS

(dB)

VCC = 4.75V, 5.0V, 5.25V

_______________________________________________________________________________________ 9

MAX

2051

toc2

8

2240198017201460

15

10

5

0

201200 2500

LO PORT RETURN LOSS vs. LO FREQUENCY (DOWNCONVERSION MODE)

LO FREQUENCY (MHz)

LO P

ORT

RETU

RN L

OSS

(dB)

PLO = -3dBm PLO = 0dBm

PLO = +3dBm

SUPPLY CURRENT vs. EXPOSED PADTEMPERATURE (TC)


MAX

2051

toc2

9

EXPOSED PAD TEMPERATURE (°C)

SUPP

LY C

URRE

NT (m

A)

603510-15

80

90

100

110

120

130

70-40 85

VCC = 5.0VVCC = 5.25V

VCC = 4.75V

MAX

2051

toc3

0

IIP3 vs. IF FREQUENCY(ALTERNATIVE VALUES OF C2)

IF FREQUENCY (MHz)

IIP3

(dBm

)

85065045025026

34

32

30

28

36

38

40

50 1050

PRF = 0dBm/TONEDOWNCONVERSION MODE

OPEN LSB, USB

2.0pF LSB, USB

1.5pF LSB, USB1.0pF LSB, USB

fRF = 1200MHz

MAX

2051

toc3

1

2RF-LO vs. IF FREQUENCY(ALTERNATIVE VALUES OF C2)

IF FREQUENCY (MHz)

2RF-

LO (d

Bc)

770590410230-85

-75

-80

-70

-65

-60

50 950

PRF = 0dBmDOWNCONVERSION MODE

OPEN

1.0pF

1.5pF2.0pF1.0pF

1.5pF

2.0pF

OPENfRF = 1200MHz

MAX

2051

toc3

2

2LO-2RF vs. IF FREQUENCY(ALTERNATIVE VALUES OF C2)

IF FREQUENCY (MHz)

2LO-

2RF

(dBc

)

770590410230-75

-65

-70

-60

-55

-50

50 950


OPEN

1.0pF, 1.5pF, 2.0pF

1.0pF

1.5pF

2.0pFOPEN

fRF = 1200MHz

MAX

2051

toc3

4

2RF-LO vs. IF FREQUENCY(VARIOUS LO DRIVE LEVELS)

IF FREQUENCY (MHz)

2RF-

LO (d

Bc)

810620430240-90

-85

-75

-80

-70

-65

-60

50 1000

PLO = -3dBm

PLO = +9dBm

DOWNCONVERSION MODEfRF = 1200MHz

PLO = 0dBm

PLO = +3dBm

PLO = +6dBm

MAX

2051

toc3

5

2LO-2RF vs. IF FREQUENCY(VARIOUS LO DRIVE LEVELS)

IF FREQUENCY (MHz)

2LO-

2RF

(dBc

)

810620430240-80

-75

-65

-70

-60

-55

-50

50 1000

PLO = -3dBm

PLO = 0dBmPLO = +3dBm

PLO = +6dBmPLO = +9dBm

DOWNCONVERSION MODEfRF = 1200MHz

MAX

2051

toc3

3

3LO-3RF vs. IF FREQUENCY(ALTERNATIVE VALUES OF C2)

IF FREQUENCY (MHz)

3LO-

3RF

(dBc

)

770590410230-80

-75

-65

-70

-60

-55

-50

50 950


OPEN

1.0pF1.5pF

2.0pF

1.0pF1.5pF

2.0pF

OPEN

fRF = 1200MHz


10 ______________________________________________________________________________________

MAX

2051

toc4

3

LO-2

IF R

ESPO

NSE

(dBc

)

50

60

70

80

40

LO-2IF RESPONSE vs. RF FREQUENCY(UPCONVERSION MODE)

RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

PLO = +3dBmPLO = 0dBm

PLO = -3dBm

MAX

2051

toc4

4

LO-2

IF R

ESPO

NSE

(dBc

)

50

60

70

80

40


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

VCC = 4.75V, 5.0V, 5.25V

CONVERSION LOSS vs. RF FREQUENCY(UPCONVERSION MODE)

MAX

2051

toc3

6

RF FREQUENCY (MHz)

CONV

ERSI

ON L

OSS

(dB)

141012701130990

6

7

8

9

10

5850 1550

TC = -40°C

TC = +25°C

TC = +85°C

MAX

2051

toc3

7


RF FREQUENCY (MHz)

CONV

ERSI

ON L

OSS

(dB)

141012701130990

6

7

8

9

10

5850 1550


MAX

2051

toc3

8


RF FREQUENCY (MHz)

CONV

ERSI

ON L

OSS

(dB)

141012701130990

6

7

8

9

10

5850 1550

VCC = 4.75V, 5.0V, 5.25V

INPUT IP3 vs. RF FREQUENCY(UPCONVERSION MODE)

MAX

2051

toc3

9

INPU

T IP

3 (d

Bm)

30

32

36

34

38

40

28

RF FREQUENCY (MHz)141012701130990850 1550

TC = -40°C

TC = +25°C

TC = +85°C

PIF = 0dBm/TONE

MAX

2051

toc4

0


INPU

T IP

3 (d

Bm)

30

32

36

34

38

40

28

RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm/TONE


MAX

2051

toc4

1


INPU

T IP

3 (d

Bm)

30

32

36

34

38

40

28

RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm/TONE

VCC = 5.0VVCC = 5.25V

VCC = 4.75V

MAX

2051

toc4

2

LO-2

IF R

ESPO

NSE

(dBc

)

50

60

70

80

40


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

TC = -40°C

TC = +25°CTC = +85°C

(Typical Application Circuit, Upconversion mode, VCC = +5.0V, PLO = 0dBm, PIF = 0dBm, fIF = 350MHz, LO is high-side injected,TC = +25°C, unless otherwise noted.)

______________________________________________________________________________________ 11


MAX

2051

toc4

5

LO+2

IF R

ESPO

NSE

(dBc

)

50

60

70

80

40

LO+2IF RESPONSE vs. RF FREQUENCY(UPCONVERSION MODE)

RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

TC = -40°C

TC = +25°C

TC = +85°C MAX

2051

toc4

6

LO+2

IF R

ESPO

NSE

(dBc

)

50

60

70

80

40


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

PLO = +3dBm PLO = 0dBm

PLO = -3dBm

MAX

2051

toc4

7

LO+2

IF R

ESPO

NSE

(dBc

)

50

60

70

80

40


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

VCC = 5.25V

VCC = 4.75V, 5.0V

MAX

2051

toc4

8

70

80

90

100

60

LO-3

IF R

ESPO

NSE

(dBc

)


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

TC = -40°C

TC = +25°C

TC = +85°C

MAX

2051

toc4

9

70

80

90

100

60

LO-3

IF R

ESPO

NSE

(dBc

)


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm


MAX

2051

toc5

0

70

80

90

100

60

LO-3

IF R

ESPO

NSE

(dBc

)


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

VCC = 4.75V, 5.0V, 5.25V

MAX

2051

toc5

1

70

80

90

100

60

LO+3

IF R

ESPO

NSE

(dBc

)


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

TC = -40°C

TC = +25°C

TC = +85°C

MAX

2051

toc5

2

70

80

90

100

60

LO+3

IF R

ESPO

NSE

(dBc

)


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm


MAX

2051

toc5

3

70

80

90

100

60

LO+3

IF R

ESPO

NSE

(dBc

)


RF FREQUENCY (MHz)141012701130990850 1550

PIF = 0dBm

VCC = 4.75V, 5.0V, 5.25V

MAX

2051

toc6

1

32023014050 410 500

IF PORT RETURN LOSS vs. IF FREQUENCY(UPCONVERSION MODE)

IF FREQUENCY (MHz)

IF P

ORT

RETU

RN L

OSS

(dB)

25

30

10

15

20

5

0fLO = 1200MHz

VCC = 4.75V, 5.0V, 5.25V

12 ______________________________________________________________________________________

LO LEAKAGE AT RF PORT vs. LO FREQUENCY(UPCONVERSION MODE)

MAX

2051

toc5

4

LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

1760162014801340

-45

-30

-35

-40

-25

-20

-501200 1900

TC = -40°C

TC = +25°C

TC = +85°C

MAX

2051

toc5

5


LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

1760162014801340

-45

-30

-35

-40

-25

-20

-501200 1900


MAX

2051

toc5

6


LO FREQUENCY (MHz)

LO L

EAKA

GE A

T RF

POR

T (d

Bm)

1760162014801340

-45

-30

-35

-40

-25

-20

-501200 1900

VCC = 4.75V, 5.0V, 5.25V

MAX

2051

toc5

7

-50

-60

-70

-40

-30

IF LEAKAGE AT RF PORT vs. LO FREQUENCY(UPCONVERSION MODE)

LO FREQUENCY (MHz)

IF L

EAKA

GE A

T RF

POR

T (d

Bm)

17601620148013401200 1900

TC = -40°C, +25°C, +85°C

MAX

2051

toc5

8

-50

-60

-70

-40

-30


LO FREQUENCY (MHz)

IF L

EAKA

GE A

T RF

POR

T (d

Bm)

17601620148013401200 1900


MAX

2051

toc5

9

-50

-60

-70

-40

-30


LO FREQUENCY (MHz)

IF L

EAKA

GE A

T RF

POR

T (d

Bm)

17601620148013401200 1900

VCC = 4.75V, 5.0V, 5.25V

RF PORT RETURN LOSS vs. RF FREQUENCY(UPCONVERSION MODE)

MAX

2051

toc6

0

RF FREQUENCY (MHz)

RF P

ORT

RETU

RN L

OSS

(dB)

1500135012001050900

25

10

15

20

5

0

30750 1650

fIF = 350MHz



______________________________________________________________________________________ 13


1 RF

2–5, 9, 10, 11,13, 14

GND

6, 8, 15 VCC

7 LOBIAS

12 LO

16, 17 IF+, IF-

18, 19, 20 GND

— EP

MAX

2051

toc6

2

50

20

30

40

10

0

32023014050 410 500

IF PORT RETURN LOSS vs. IF FREQUENCY(UPCONVERSION MODE)

IF FREQUENCY (MHz)

IF P

ORT

RETU

RN L

OSS

(dB)

fLO = 1200MHzfLO = 1500MHz

fLO = 1900MHz

MAX

2051

toc6

3

1850170015501400

10

15

5

0

201100 1250 2000

LO RETURN LOSS vs. LO FREQUENCY(UPCONVERSION MODE)

LO FREQUENCY (MHz)

LO R

ETUR

N LO

SS (d

B)PLO = +3dBm

PLO = 0dBmPLO = -3dBm

Ω

Ω ±

Ω

14 ______________________________________________________________________________________

Ω

Ω

Ω

Ω Ω

Ω

ΩΩ

ΩΩ

± ±

DESIGNATION QTY DESCRIPTION SUPPLIER

C1, C9 2 47pF microwave capacitors (0402) Murata Electronics North America, Inc.

C2 1 1.3pF microwave capacitor (0402) Murata Electronics North America, Inc.

C3, C4 2 150pF microwave capacitors (0402) Murata Electronics North America, Inc.

C5, C7, C10 3 100pF microwave capacitors (0402) Murata Electronics North America, Inc.

C6, C8, C11 3 0.01μF microwave capacitors (0402) Murata Electronics North America, Inc.

R1 1 61.9Ω ±1% resistor (0402) Digi-Key Corp.

T1 1 1:1 transformer (50:50) MABACT0060 M/A-Com, Inc.

U1 1 MAX2051 IC (20 TQFN-EP) Maxim Integrated Products, Inc.

______________________________________________________________________________________ 15

http://www.maxim-ic.com.cn

16 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600

© 2009 Maxim Integrated Products

PROCESS: SiGe BiCMOS

*EXPOSED PAD. CONNECT EP TO GND.

4

5

3

2

12

11

13

LOBI

AS

GND

GND

14

V CC

GND

IF-

IF+

GND

6 7

GND

9 10

20 19 17 16

GND

GND

GND

GND

LO

GND

V CC

VCCVCC

GND

8

18

GND

1

EP*

15VCCRF

+

MAX2051

IF

T1

RF

C2

C1

C5 C6 C7 C8

C3

R1

LOC9

C4

VCC

C11C10

www.maxim-ic.com.cn/packages

T2055+3 21-0140

http://www.maxim-ic.com.cn/packages

http://pdfserv.maxim-ic.com/package_dwgs/21-0140.PDF

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