JAJA482

(TI)TITI

TITITITI

TINA-TITM ()

1.2 (MOSFET) MARKETING

1.2.7 (MOSFET)

MOSFET p n

SPICE 1.2.65() 2 1.2.66

()

JFETMOSFET

1.2.65 MOSFET

1.2.66 MOSFET

www.tij.co.jp

TINA-TI 2

MOSFET

MOS (FET) 1934

( Julius Edgar Lilienfeld, April 18, 1882 August 28, 1963 ) 1933

1.2.67

Vin

A-C Vin(Cu2S) 1.2eV

MOS

1.2.67 DEVICE FOR CONTROLLING ELECTRIC CURRENT (U.S. Patent 1,900,018) [21]

MOSFET

1950 1960 (SiO2)

1963 (Dawon Kahng) (M.M.Atalla) n

p SiO2

1.2.68 (Metal-Oxide-Semiconductor Field-Effect Transistor: MOSFET)

1.2.68 SiO2

SiO2

MOSFET

1.2.68 ELECTRIC FIELD CONTROLLED SEMICONDUCTOR DEVICE(U.S. Patent 3,102,230) [22]

www.tij.co.jp

TINA-TI 3

CMOS-IC

(IC) 1961Micrologic

Micrologic IC8 TO-5 RTL (Resistor-Transistor Logic)

1.2.69Micrologic 3 NOR

[23]

1963 TTL (Transistor-Transistor Logic) TTL

SN7400 TTL

1.2.70 SN7410 TTL [24]

1.2.69 RTL ( 3 NOR) 1.2.70 TTL (3 NAND)

1960MOSFET IC (MOS-IC) MOSFET

IC1963

MOS-IC CMOS (Complementary MOS logic) 1.2.71

[25]

1.2.71 (a) CMOS VI High pMOSFET

Low nMOSFET High Low

Low High

TTLCMOS

nMOSFET pMOSFET

(a)CMOS (b) CMOS

1.2.71 LOW STAND-BY COMPLEMENTARY FIELD EFFECT CIRCUITRY (US patent 3,356,858) [25 ]

www.tij.co.jp

TINA-TI 4

CMOS

1968 RCA CMOS CD4000C D4000 3V15V

MHz

CD4000 20mMOS

CMOS

1970 TTL SN7400 25MHz CMOS

74HC [26] TTL TTL

74HCT [27] 74ACT[28] CMOS TTL

1974 IBMMOSFET

2 [29] 1970

CMOS-LSI

CMOS-LSI 1.2.5CMOS

MOSFET

1.2.4 1.2.75 [30]

1.2.75

1.2.4 SN74AUP1G14 [31]

1.2.5 [32]

www.tij.co.jp

TINA-TI 5

1.2.72 1.2.73 SN74AUP1G14 HSPICE

( ) ( )

1.2.72 SN74AUP1G14

1.2.73 SN74AUP1G14

www.tij.co.jp

TINA-TI 6

CMOS

NTT 1987 TZ-802TZ-802 900g

40NTT DoCoMo 1993 2 PDC800

CMOS-IC

CMOS GSM

CMOS 1990( 200nm)

CMOS CMOS

2001 IEEE 0.1m

CMOS 1.2.6 [33]

MOSFET

MOSFET

MOSFET IO MOSFET

0.1m CMOS

(SiO2 ) 1.5V 1.2.74

nMOSFET N-well

N-well

nMOSFET 4.3V pMOSFET 7.5V-

1.2.74 nMOSFET

1.2.6 0.1m CMOS [33]

www.tij.co.jp

TINA-TI 7

CMOS

CMOS IC CMOS

CMOS

CMOS 1.2.75

CMOS CMOS

LSI CMOS CMOS

CMOS ADC ADC

DAC DAC BiCMOS 25GHz 1/f

(SiGe) NPN PNP

(SOI) BiCMOS

ADC BiCMOSMOS (LDMOS) CMOS (DECMOS)

BiCMOS IC

1.2.75 CMOS [34]

1.2.76 CMOS HPA07 [34]

CMOS HPA07 1.2.76

ICCMOS

CMOS CMOS

www.tij.co.jp

TINA-TI 8

CMOS

MOSFET RCA 1974 CA3130 1.2.77

CA3130 pMOSFET CMOSpMOSFETLF355 TL084

p JFET5~ IC 1

1.2.78pMOSFET npn

n [35]CA3130 nMOSFET

p

CA3130+15V

pMOSFET npn

npn 2

5000 (74dB) 150k (104dB) [36]

MOSFETCMOS

MOSFETCA3130 JFET

LF355 TL084 CA3130 CMOS

CA3140

1.2.77 CA3130

1.2.78 npn pMOSFET

www.tij.co.jp

TINA-TI 9

CMOS

CMOS

1.2.79 CMOS1M1, M2, M3

M4, M5 Vin2M6

M7 CMOS 1.2.76

1.2.76

M2, M6 M3, M5, M6, M7

1.2.77 1.2.78

1.2.77

1.2.78

M2

1.2.79 1.2.80 M6

M4 -

1.2.79 1.2.80

1.2.79

1.2.80

1.2.79

1.2.79 2 CMOS

www.tij.co.jp

TINA-TI 10

1.2.80 ( 1.2.79)

CMOS

2 CMOS

1.2.82MOSFET (M6, M7, M8, M9)

MOSFET (M2, M3)MOSFET

1.2.81 2 CMOS 1.2.82

www.tij.co.jp

TINA-TI 11

1.2.84 CMOS

1 CMOS 2 CMOS

2 CMOS

MOSFET (M4, M5)- MOSFET (M8, M9,

M10, M11) MOSFET

MOSFET 1.2.83-

1.2.82 MOSFET

CMOS 1.2.81

1.2.81

1.2.83 nMOSFET

1.2.82

1.2.84 CMOS

www.tij.co.jp

TINA-TI 12

CMOS CMOS 1.2.7 1.2.86 OPA313

AB

n MOSFET pMOSFET 2

pMOSFET nMOSFET 1.2.85 1.1V2

1.2.85 OPA313 [37]

1.2.86 OPA313 [37]

GBW

Hz

V/s

pA

0.1~10Hz

A

V

OPA313 [37]

1M 0.5 6 2 50 1.85.5 1MHz GBW, ,

OPA365 [38]

50M 25 5 1 4.6mA 2.55.5 50MHz GBW, ,

1.2.7 CMOS CMOS

www.tij.co.jp

TINA-TI 13

1.2.88 OPA365 pMOSFET nMOSFET AB

1.2.88 1.8V

1.2.87

1.2.87 OPA365 [38]

1.2.88 OPA365 [38]

www.tij.co.jp

TINA-TI 14

MOSFET SPICE

SPICE 1970 CANCER (computer analysis of non-linear circuits,

excluding radiation) CANCER IC MSI ( Medium Scale Integration

circuit ) IC1972

CANCER SPICE1 ( Shichman-Hodges Model )

JFETMOSFET [39]

1975HSPICE PSPICE SPICE2

SPICE2

MOSFET 1.2.8

LEVEL = 1 V-I

LEVEL = 2 LEVEL=1

LEVEL =

1.2.8 SPICE2MOSFET

MOSFET SPICE2

MOS SPICE2 MOSFET

SPICE SPICEMOSFET

PSPICE LEVEL1LEVELMOSFET HSPICE LEVEL1LEVEL64

MOSFET

TINA-TI 1.2.89

SPICE2 LEVEL 3 422 n POWER MOSFET 133

p POWER MOSFET 1.2.8 SPICE2MOSFET

PSPICEMOSFET 1.2.90 1.2.91 TINA-TI

1.2.89 TINA-TI POWER MOSFET ( SPICE2 LEVEL-3 )

www.tij.co.jp

TINA-TI 15

1.2.90 PSPICE ( LEVEL 7, MOSFET )

www.tij.co.jp

TINA-TI 16

1.2.91 PSPICE ( LEVEL 7, pMOSFET )

www.tij.co.jp

TINA-TI 17

MOSFET SPICE DC

MOSFET 1.2.92

SiO2

SiO2 MOSFET

JFET-

1.2.92 MOSFET

SPICEMOSFET 1.2.8 (LEVEL=1)

MOSFET 3- (BCE) 1.2.83

(BCE)

( )

( )

( ) ( )

( ( ) )( ) ( )

1.2.84

( )

1.2.9MOSFET

MOSFET

- -

PMOSFET

1.2.89 n POWER MOSFET 2N6755 p POWER MOSFET 2N6804

1.2.93 1.2.94

=

www.tij.co.jp

TINA-TI 18

1.2.9 SPICE2 MOSFET

www.tij.co.jp

TINA-TI 19

1.2.93 MOSFET

www.tij.co.jp

TINA-TI 20

1.2.94 MOSFET

www.tij.co.jp

TINA-TI 21

MOSFET SPICE MOSFET 1.2.95 MOSFET

1.2.96

1.2.95 MOSFET 1.2.96 MOSFET

SPICE2 LEVEL=1 1.2.85

( )

(

) ( )

(

) L, ( )

1.2.86

1.2.86

1.2.5

1.2.87 1.2.88

( ) 1.2.87

( ) 1.2.88

1.2.5 B-D 0- pnB-S 0- pn

www.tij.co.jp

TINA-TI 22

MOSFET SPICE MOSFET AC 1.2.97

1.2.97 MOSFET

1.2.89 1.2.90 1.2.91

1.2.89

1.2.90

1.2.91

www.tij.co.jp

TINA-TI 23

TINA-TI MOSFET

TINA-TIMOSFET 1.2.98 1.2.99

MOSFET p n

2

1.2.98 MOSFET

+ [ ] [ ] [ ] [ ]

+ [ ] [ ] [ ] [ ]

+ [ ] [ ]

[ ] +

( m) (m) ( m2)

( m)

1.2.6MOSFET ,

DCMOSFET

[ ]

[ ]

1.2.99MOSFET

TINA-TI

MIN 5 2 0 0 NWEAK L=20U W=10U

M1 3 4 5 5 M_2N5460 L=100U NR=0 NRS=0

www.tij.co.jp

TINA-TI 24

1.2.99

www.tij.co.jp

TINA-TI 25

[1] W. F Gale and T. C. Totemeier, Smithells Metals Reference Book, Eighth Edition,

Butterworth-Heinemann 2004, ISBN:9780750675093

[2] Sami Franssila, Introduction to Microfabrication, John Wiley & Sons @ 2004, ISBN:9780470851050

[3] Muammer Ko and Turul ze, Micro-Manufacturing: Design and Manufacturing of Micro-Products

John Wiley & Sons @ 2001, ISBN:9780470556443

[4] William Shockley, Electrons And Holes In Semiconductors , 1950

[5] U.S. Department of the Army, Basic Theory and Application of Transistors, 1959

[6] Ebers, J.J., Moll, J.L., Large-Signal Behavior of Junction Transistors

Proceedings of the IRE Volume: 42 , Issue: 12, 1954

[7] H. K. Gummel and H. C. Poon, "An integral charge control model of bipolar transistors",

Bell Syst. Tech. J., vol. 49, pp. 827852, MayJune 1970

[8] L. Nagel and R. Rohrer, "Computer Analysis of Nonlinear Circuits, Excluding Radiation (CANCER),"

IEEE J Solid-State Circuits, Vol SC-6, No 4, August 1971, pp. 166-182

[9] L. W. Nagel and D. O. Pederson, Simulation Program with Integrated Circuit Emphasis (SPICE),

presented at 16th Midwest Symp. on Circuit Theory, Ontario, Canada, April 12, 1973 and available as Memorandum

No ERL-M382, Electronics Research Laboratory, College of Engineering, University of California, Berkeley, CA,

[10] L. W. Nagel, SPICE2: A Computer Program to Simulate Semiconductor Circuits,

PhD dissertation, Univ. of California, Berkeley, CA, May 9 1975 and available as Memorandum No ERL-M520,

Electronics Research Laboratory, College of Engineering, University of California, Berkeley, CA,

[11] E. Cohen, Program Reference for SPICE2,

University of California, Berkeley, ERL Memo UCB/ERL M75/520, May 1975,

[12] T. L. Quarles, SPICE3 Version 3C1 Users Guide.

University of California, Berkeley, ERL Memo No. UCB/ERL M89/47, April 1989.

[13] Andrei Vladimirescu, THE SPICE BOOK

John Wiley & Sons, Inc., 1994, ISBN 0-471-60926-9

[14] Paolo Antognetti, Giuseppe Massabrio, Semiconductor Device Modeling with SPICE. SECOND EDITION

McGraw-Hill Professional, 1998/12/1, ISBN-10: 0071349553

[15] S.M. SZE, SEMICONDUCTOR DEVICES Physics and Technology

AT&T Bell Laboratories, 1985, JOHN WILEY & SONS,

[16] Richard S. Muller, Theodore I. Kamins and Mansun Chan, Device Electronics for Integrated Circuits, Third Edition

John Wiley & Sons, 2003, ISBN: 9780471593980

[17] Paul R. Gray, Paul J. Hurst, et al., Analysis and Design of Analog Integrated Circuits

John Wiley & Sons 2001, ISBN: 9780471321682

[18] TINA-TI: SPICE-Based Analog Simulation Program V9, Component Help, 2013, Texas Instruments Inc.

[19] LF355 Data Sheet, SNOSBH0C, MARCH 2013, Texas Instruments Inc.

[20] TL084 Data Sheet, SLOS081H, JANUARY 2014, Texas Instruments Inc.

www.tij.co.jp

TINA-TI 26

[21] J.E. LILIENFELD, DEVICE FOR CONTROLLING ELECTRIC CURRENT

U.S. Patent 1,900,018, filed March 28, 1928, issued March 7, 1933

[22] Dawon Kahng, ELECTRIC FIELD CONTROLLED SEMICONDUCTOR DEVICE

U.S. Patent 3,102,230, filed May 31, 1960, issued Aug. 27, 1963

[23] Moore, Gordon E. "The role of Fairchild in silicon technology in the early days of Silicon Valley",

Proceedings of the IEEE, Volume: 86, Issue: 1, Publication Year: 1998, Page(s): 53 62

[24] SN7410 Data Sheet, SDLS035A, 1983, Texas Instruments Inc.

[25] F. M. Wanlass, LOW STAND-BY POWER COMPLEMENTARY FIELD EFFECT CIRCUIT

U.S. Patent 3,356,858, filed June 18, 1963, issued Dec. 5, 1967

[26] High-speed CMOS Logic Data Book, 1983, SCLD001, Texas Instruments

[27] High-speed CMOS Logic Data Book, 1988, ISBN 3-88078-071-4, Texas Instruments

[28] AC/ACT Advanced CMOS Logic Product Information, 1996, SCAA027, Texas Instruments

[29] M., Bohr, "A 30 Year Retrospective on Dennard's MOSFET Scaling Paper,"

IEEE Solid-State Circuits Society Newsletter, vol. 12, 2007, pp. 1113.

[30] CMOS Power Consumption and Cpd Calculation, SCAA035B, June 1997, Texas Instruments

[31] SN74AUP1G14 Data Sheet, SCES878I, June 2003, Texas Instruments

[32] , JAJT001D, 2011,

[33] Chatterjee A., Mosher D., Sridhar S., Kim Y., Nandakumar M,

Aur S.-W., Chen Z.,Madhani P, Tang S., Aggarwal R, Ashburn S., Shichijo, H.

Analog integration in a 0.35 m Cu metal pitch, 0.1 m gate length, low-power digital CMOS technology,

Electron Devices Meeting, 2001 IEDM '01, Technical Digest., Publication Year: 2001 , Page(s): 10.1.1- 10.1.4

[34] 2010, November 2010,

[35] Polinsky, M, Graf, S. MOS-bipolar monolithic integrated circuit technology

IEEE Transactions on Electron Devices, Volume: 20 , Issue: 3, Publication Year: 1973 , Page(s): 239 - 244

[36] Otto Schade, Jr. CMOS/Bipolar Linear Integrated Circuits, ISSCC Digest of Technical Papers, February

1974, pp. 136137. See also: R. L. Sanquini, Building C-MOS, Bipolar Circuits on Monolithic

Chip Enhances Specs, Electronics, October 3, 1974. (The CA3130 CMOS IC op amp.)

[37] OPA313/OPA2313/OPA4313 Data Sheet, SBOS649C, MARCH 2013, Texas Instruments Inc.

[38] OPA365/OPA2365 Data Sheet, SBOS365D, JUNE 2009, Texas Instruments Inc.

[39] Shichman, H. ; Hodges, D., Modeling and simulation of insulated-gate field-effect transistor switching circuits

Solid-State Circuits, IEEE Journal of Volume:3 , Issue: 3, Digital Object Identifier: 10.1109/JSSC.1968.1049902

IMPORTANT NOTICE