thermally-enhanced high power rf ldmos fet 800 w, 48 v

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02.1, 2020-11-02

All published data at TCASE = 25°C unless otherwise indicatedESD: Electrostatic discharge sensitive device—observe handling precautions!

PTRA097058NB Package PG-HB2SOF-6-1

Thermally-Enhanced High Power RF LDMOS FET800 W, 48 V, 730 – 960 MHz

DescriptionThe PTRA097058NB is a 800-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features• Broadband internal input and output matching• Asymmetric design

- Main: P1dB = 250 W typical - Peak: P1dB = 500 W typical

• Typical pulsed CW performance, 960 MHz, 48 V, 10 µs, 10% duty cycle, class AB test, Doherty configuration - Output power at P1dB = 630 W - Output power at P3dB = 800 W - Efficiency = 55% - Gain = 19 dB

• Capable of handing 10:1 VSWR at 48 V, 112 W (CW)output power

• Integrated ESD protection• Human Body Model Class 1C (per ANSI/ESDA/JEDEC

JS-001)• Low thermal resistance• Pb-free and RoHS-compliant

PTRA097058NB

RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) VDD = 48 V, IDQ = 450 mA, POUT = 112 W avg, VGS(peak) = 1.9 V, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristics Symbol Min Typ Max Unit

Gain Gps 17.3 18.4 — dB

Drain Efficiency hD 45 48 — %

Adjacent Channel Power Ratio ACPR — –30 –26.5 dBc

Output PAR @ 0.01% CCDF OPAR 6.5 7.5 — dB

-70

-50

-30

-10

10

30

50

70

0

4

8

12

16

20

24

28

25 30 35 40 45 50 55 60

Effic

ienc

y (%

)

Peak

/Ave

rage

Rat

io, G

ain

(dB)

Average Output Power (dBm)

Single-carrier WCDMA Drive-upVDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 1.9 V,

ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

ptra097058nb_g2

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02.1, 2020-11-02 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02.1, 2020-11-02

2PTRA097058NB

DC Characteristics

Characteristics Conditions Symbol Min Typ Max Unit

Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V

Drain Leakage Current VDS = 48 V, VGS = 0 V IDSS — — 1 µA

VDS = 105 V, VGS = 0 V — — 10 µA

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA

On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.07 — W

On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.04 — W

Operating Gate Voltage (main) VDS = 48 V, IDQ = 450 mA VGS 3.3 3.55 3.8 V

Operating Gate Voltage (peak) VDS = 48 V, IDQ = 0 mA VGS — 1.9 — V

Maximum Ratings

Parameter Symbol Value Unit

Drain-source Voltage VDSS 105 V

Gate-source Voltage VGS –6 to +12 V

Operating Voltage VDD 0 to +55 V

Junction Temperature TJ 225 °C

Storage Temperature Range TSTG –65 to +150 °C

1. Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. 2. Parameters values can be affected by end application and product usage. Values may change over time.

Thermal Characteristics

Characteristics Symbol Value Unit

Thermal Resistance (main, TCASE = 70 °C, 112 W CW) RqJC 0.48 °C/W

(peak, TCASE = 70 °C, 457 W CW) RqJC 0.204 °C/W

Moisture Sensitivity Level

Level Test Standard Package Temperature Unit

3 IPC/JEDEC J-STD-020 260 °C

Ordering Information

Type and Version Order Code Package Shipping

PTRA097058NB V1 R2 PTRA097058NB-V1-R2 PG-HB2SOF-6-1 Tape & Reel, 250 pcs


3PTRA097058NB

Typical Performance (data taken in test fixture)

50

52

54

56

58

60

62

14

15

16

17

18

19

20

860 880 900 920 940 960 980 1000 1020

Effic

ienc

y (%

)

Gai

n (d

B)

Frequency (MHz)

Single-carrier WCDMA Broadband Performance

VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 1.9 V, POUT = 50.5 dBm, 3GPP WCDMA signal, PAR = 10 dB

Efficiency

Gain

-30

-25

-20

-15

-10

-40

-35

-30

-25

-20

850 900 950 1000 1050

Ret

urn

Loss

(dB)

ACPL

& A

CP

Up

(dBc

)

Frequency (MHz)

Single-carrier WCDMA Broadband Performance

VDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 1.9 V, POUT = 50.5 dBm, 3GPP WCDMA signal, PAR = 10 dB

ACPUACPLIRL

ptra097058nb_g4 0

10

20

30

40

50

60

70

14

15

16

17

18

19

20

21

29 33 37 41 45 49 53 57 61

Effic

ienc

y (%

)

Gai

n (d

B)

Output Power (dBm)

Pulsed CW PerformanceVDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 1.9 V,

12 μs pulse width, 10 % duty cycle

925 MHz Gain942 MHz Gain960 MHz Gain925 MHz Eff942 MHz Eff960 MHz Eff

ptra0997058nb_g5

0

10

20

30

40

50

60

-70

-60

-50

-40

-30

-20

-10

25 30 35 40 45 50 55 60

Effic

ienc

y (%

)

ACP

Up

& Lo

w (d

Bc)

Average Output Power (dBm)

Single-carrier WCDMA Drive-upVDD = 48 V, IDQ(MAIN) = 450 mA, VGS(PEAK) = 1.9 V,

ƒ = 960 MHz, 3GPP WCDMA signal,PAR = 10 dB, BW = 3.84 MHz

ACPUACPLEfficiency

ptra097058nb_g1


4PTRA097058NB

Typical Performance (cont.)

0

10

20

30

40

50

60

70

14

15

16

17

18

19

20

21

29 33 37 41 45 49 53 57 61

Effic

ienc

y (%

)

Gai

n (d

B)

Output Power (dBm)

Pulsed CW Performanceat various VDD

IDQ(MAIN) = 450 mA, VGS(PEAK)= 1.9V, ƒ = 960 MHz, 12 μs pulse width, 10 % duty cycle

44 V Gain48 V Gain50 V Gain44 V Eff48 V Eff50 V Eff

ptra097058nb_g6

-35

-30

-25

-20

-15

-10

-5

0

12

13

14

15

16

17

18

19

875 900 925 950 975 1000 1025

Inpu

t Ret

urn

Loss

(dB)

Gai

n (d

B)Frequency (MHz)

CW Performance Small SignalGain & Input Return Loss VDD = 48 V, IDQ(MAIN) = 450 mA,

VGSPEAK = 1.9 V

IRL

Gain

ptra097058nb_g7


5PTRA097058NB

Load Pull Performance

Main Side Load Pull Performance – Pulsed CW signal – 10 µsec, 10% duty cycle, 48 V, IDQ = 450 mA, class AB

P1dB

Max Output Power Max Drain EfficiencyFreq

[MHz]Zs

[W]Zl

[W]Gain [dB]

P1dB[dBm]

P1dB [W]

hD[%]

Zl [W]

Gain [dB]

P1dB [dBm]

P1dB [W]

hD[%]

760 3.3 + j0.76 2.4 – j0.48 22.08 54.29 268.53 62.2 3.9 + j1.6 23.5 52.60 181.97 73.8

820 2.1 – j1.35 1.7 – j0.14 21.53 54.10 257.04 61.2 3.4 + j2.5 23.26 51.23 132.74 72.3

925 2.2 – j3.3 1.7 – j1.2 20.41 54.27 267.3 57.8 2.2 + j0.7 22.09 52.16 164.44 69.0

960 2.8 – j4 1.6 – j0.9 20.54 54.32 270.4 61.6 1.7 + j1 22.44 51.67 146.89 73.0

P3dB


[MHz]Zs

[W]Zl

[W]Gain [dB]

P3dB [dBm]

P3dB [W]

hD[%]

Zl [W]

Gain [dB]

P3dB [dBm]

P3dB [W]

hD[%]

760 3.3 + j0.76 2.4 – j0.6 20.03 55.09 322.85 65.6 4.5 + j2.4 21.65 52.48 177.01 75.9

820 2.1 – j1.35 1.7 – j1.1 19.04 55.08 322.11 59.9 2.85 + j0.6 20.8 53.86 243.22 74.8

925 2.2 – j3.3 1.7 – j1.3 18.42 55.11 324.34 60.9 2 + j0.6 20 53.00 199.53 70.9

960 2.8 – j4 1.6 – j1 18.4 55.16 328.1 63.1 1.7 + j0.9 20.36 52.55 179.89 73.2

Peak Side Load Pull Performance – Pulsed CW signal – 10 µsec, 10% duty cycle, 48 V, VGSPK = 2 V, class C

P1dB


[MHz]Zs

[W]Zl

[W]Gain [dB]

P1dB[dBm]

P1dB [W]

hD [%]

Zl [W]

Gain [dB]

P1dB [dBm]

P1dB [W]

hD [%]

760 0.8 – j0.4 0.87 – j0.7 18.88 57.94 622.3 62.5 0.54 + j0.4 19.87 53.88 244.3 75.6

820 0.7 – j1.55 0.85 – j0.57 18.27 57.74 594.3 60.8 0.55 + j0.39 19.27 54.47 279.9 74.2

925 1.15 – j3.13 0.83 – j0.55 17.18 57.62 578.1 61.0 0.53 + j0.32 17.79 54.56 285.8 73.9

960 1.66 – j3.68 0.8 – j0.63 16.76 57.54 567.5 59.1 0.55 + j0.1 17.87 55.26 335.7 72.9

P3dB


[MHz]Zs

[W]Zl

[W]Gain [dB]

P3dB[dBm]

P3dB[W]

hD [%]

Zl [W]

Gain [dB]

P3dB[dBm]

P3dB[W]

hD [%]

760 0.8 – j0.4 0.89 – j0.72 16.81 58.64 731.1 64.4 0.84 + j0.07 17.83 56.86 485.3 74.9

820 0.7 – j1.55 0.88 – j0.63 16.15 58.46 701.5 62.1 0.54 + j0.22 17.75 55.90 389 74.2

925 1.15 – j3.13 0.86 – j0.6 15.06 58.33 680.8 61.7 0.55 + j0.1 16.33 56.24 420.7 72.7

960 1.66 – j3.68 0.9 – j0.67 14.69 58.23 665.3 60.8 0.55 + j0.06 15.93 56.00 398.1 72.4


6PTRA097058NB

Reference Circuit, 925 – 960 MHz

Reference circuit assembly diagram (not to scale)

Reference Circuit AssemblyDUT PTRA097058NB V1Test Fixture Part No. LTA/PTRA097058NB-V1PCB Rogers 4350, 0.020” thick, 2 oz. copper, εr = 3.66, ƒ = 925 – 960 MHzFind Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF

C104

R103

U1

C110C111

C102

C108

C109

R102

C112C113C114

C106

C107

R101

C101

C105

C103

)

C217 C218

C202

C213C212

C208

C203

C215

C206

C205 C201

C209 C210

C216

C214

C204

C211C207

PTRA097058NB_IN_05

(284) RO4350, 20 MIL PTRA097058NB_OUT_05

RO4350, 20 MIL

(284)

p t r a 0 9 7 0 5 8 n b _ C D _ 0 9 - 0 2 - 2 0 2 0

Components InformationComponent Description Manufacturer P/NInput C101, C102 Capacitor, 8.2 pF ATC ATC600F8R2CT250X

C103 Capacitor, 4.3 pF ATC ATC600F4R3BT250X

C104, C105, C111, C112 Capacitor, 68 pF ATC ATC600F680JT250X

C106, C113 Capacitor, 1 µF, 6.3 V Murata Electronics GRM188R60J105KA01D

C107, C114 Capacitor, 10 µF, 100 V Murata Electronics GRM32EC72A106KE05L

C108, C109 Capacitor, 12 pF ATC ATC600F120JT250X

C110 Capacitor, 4.7 pF ATC ATC600F4R7BT250X

R101, R102 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100V

R103 Resistor, 50 ohms RICHARDSON C16A50Z4

U1 Hybrid Coupler RJ2 CMX09Q02


7PTRA097058NB

Components InformationComponent Description Manufacturer P/NOutputC201, C214 Capacitor, 6.2 pF ATC ATC600F6R2CT250X

C202 Capacitor, 12 pF ATC ATC600F120JT250X



C206, C216 Capacitor, 1 µF, 100 V TDK Corporation C4532X7R2A105M230KA

C207, C208, C209, C210, C217 Capacitor, 10 µF, 100 V TDK Corporation C5750X7S2A106M230KB

C211 Capacitor, 10 µF, 100 V Murata Electronics GRM32EC72A106KE05L

C212 Capacitor, 15 pF ATC ATC600F150JT250X

C213 Capacitor, 1.5 pF ATC ATC600F1R5CT250X

C218 Capacitor, 100 µF, 63 V Panasonic Electronic Components EEE-FK1J101P

Pinout Diagram (top view)

Pin DescriptionD1 Drain device 1 (main) D2 Drain device 2 (peak) G1 Gate device 1 (main) G2 Gate device 2 (peak)V1 Drain Video Decoupling, No DC BiasV2 NC (it is recommended to ground this pin)S Source (flange)

Main Peak

D1 D2

G2G1P G - H B 2 S O F - 6 - 1 _ P D _ 0 9 - 2 1 - 2 0 1 6

S = flange

V1 V2

Bias Sequencing

Bias ON 1. Ensure RF is turned off2. Apply pinch-off voltage of 0 V to the gate3. Apply nominal drain voltage4. Bias gate to desired quiescent drain current5. Apply RF

Bias OFF1. Turn RF off2. Apply pinch-off voltage of 0 V to the gate3. Turn-off drain voltage4. Turn-off gate voltage

Reference Circuit, 925 – 960 MHz (cont.)


8PTRA097058NB

Package Outline Specifications

Package PG-HB2SOF-6-1

32.262x 14.12 2x 10.62x 1.02

2.837.064x 11.29 2x 4.44

1.57

9.96

5

1

1

9.96

19.4

6

3.30

0.25

3.8132.26

5

2x 4

.75

2x 1.00

2.03

7.19 2x

0.6

3x 4

5°

10°

7°

2x 0.500.05

8.46

4.23

31.26

3.51

D1 D2

G1 G2

D2 D1

G2 G1

V V

V V

PG-HB2SOF-6-1_prelim_02-09-2017


Diagram Notes—unless otherwise specified:

1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included.

2. Fillets and radii: all radii are 0.3 mm max.

3. Interpret dimensions and tolerances per ISO 8015.

4. Dimensions are mm.

5. Does not include mold/dam bar and metal protrusion.

6. All tolerances ± 0.1 mm unless specified otherwise.

7. All metal surfaces tin pre-plated, except area of cut.

8. Lead thickness: 0.25 mm.

9. Pins: D1, D2 – drain; G1, G2 – gate; S – source;

V – drain video decoupling, no DC bias












32.262x 14.12 2x 10.62x 1.02

2.837.064x 11.29 2x 4.44

1.57

9.96

5

1

1

9.96

19.4

6

3.30

0.25

3.8132.26

5

2x 4

.75

2x 1.00

2.03

7.19 2x

0.6

3x 4

5°

10°

7°

2x 0.500.05

8.46

4.23

31.26

3.51

D1 D2

G1 G2

D2 D1

G2 G1

V V

V V



TOP VIEW

BOTTOM VIEW












32.262x 14.12 2x 10.62x 1.02

2.837.064x 11.29 2x 4.44

1.57

9.96

5

1

1

9.96

19.4

6

3.30

0.25

3.8132.26

5

2x 4

.75

2x 1.00

2.03

7.19 2x

0.6

3x 4

5°

10°

7°

2x 0.500.05

8.46

4.23

31.26

3.51

D1 D2

G1 G2

D2 D1

G2 G1

V V

V V



9. Pins : D1, D2 – drain; G1, G2 – gate; V1 – drain video decoupling, no DC bias; V2 – NC (it is recommended to ground this pin); S – source

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 02.1, 2020-11-02 www.wolfspeed.comRev. 02.1, 2020-11-02

9PTRA097058NB

Revision HistoryRevision Date Data Sheet Type Page Subjects (major changes since last revision)

01 2019-08-08 Advance All Proposed specification for new product development

01.1 2020-04-08 Advance 2 corrected 28V to 48V

02 2020-09-15 Production All Data Sheet reflects released product specification

02.1 2020-11-02 Production 6 Updated frequency range for circuit

© 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.

For more information, please contact:

4600 Silicon DriveDurham, North Carolina, USA 27703www.wolfspeed.com/rf

Sales Contact [email protected]

Notes & Disclaimer

Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree.

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.:

PTRA097058NB-V1-R2

https://www.mouser.com/wolfspeed

https://www.mouser.com/access/?pn=PTRA097058NB-V1-R2

thermally-enhanced high power rf ldmos fet 800 w, 48 v

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