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The holistic approach to meet today’s patterning challenges
Martyn Coogans Product Manager, Applications
10 nm
ovX ovY99.7 42.1 43.8Max 42.1 43.8m+3s60.1 69.73sd 59.9 66.0
wafer 7
Wafer alignment Etch fingerprint
CMP fingerprint Metrology accuracy
On product OVERLAY > 6nm
10 nm99.7%Fx: 0.65 nmy: 0.56 nm
( )
NXT-C:1970 & NXE:3300 - Scanner OVERLAY < 2nm
NXT-C:1970 Champion data
(0.7-0.6nm)
10 nm99.7%x: 0.9 nmy: 0.7 nm
NXE:3300 Champion data
(0.9-0.7nm)
Scanner Overlay Error Contribution Other Overlay Error Contributors
Customer Challenge: scanner and non scanner contributors to patterning performance must be addressed – example Overlay
7 September 2015
Public Slide 2
Scanner is the only tool processing the wafer at the field level allowing per field corrections, linear and high order
Public Slide 3
Dose manipulator
D
F
O
Dose
Overlay
Focus In
terfa
ces
(kno
bs)
actu
ator
s
Wafer stage
Reticle stage
Inside NXT and NXE scanners Scanner exposure is field-by-field
ASML holistic lithography: links the scanner to YieldStar metrology and computational lithography design context
Advanced
lithography capability
Computational Lithography
Design context
Process Window Enlargement
YieldStar Metrology and
Control SW
Process Window Control
Process window detection
NXT - Immersion NXE - EUV
Public
ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)
Ramp Process development HVM
Optimal models and sampling
Static process setup
Overlay and Imaging On-Product Performance
3
Reduce L2L , W2W
3 Dynamic process setup
waf
er 2
waf
er
lot 2 lot
machine 2 machine
Reduce Impact of Variations
4 Process control & monitoring
Excursion control thru scanner, metro & process KPI monitoring
Maintain Performance
5
Public
Optimal metrology accuracy, precision and throughput
Metrology setup
YieldStar and Smash Metrology
µDBO
µDBF
SMASH XY
2
CD
Matched machine overlay on all layouts
Scanner Performance 1
1.7nm
Holistic lithography addresses the 3 contributors of on product overlay
On
Prod
uct O
verla
y (n
m)
Scanner Contribution
Application dependent contribution
Process Contribution
Public
Separate control loops for scanner, layout dependent and process to optimize holistic control
Application dependent calibration
Process models
Baseliner Grid
Dense subrecipe
On
Prod
uct O
verla
y (n
m)
Public
ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)
Ramp Process development HVM
Optimal models and sampling
Static process setup
Overlay and Imaging On-Product Performance
3
Reduce L2L , W2W
3 Dynamic process setup
waf
er 2
waf
er
lot 2 lot
machine 2 machine
Reduce Impact of Variations
4 Process control & monitoring
Excursion control thru scanner, metro & process KPI monitoring
Maintain Performance
5
Public
Optimal metrology accuracy, precision and throughput
Metrology setup
YieldStar and Smash Metrology
µDBO
µDBF
SMASH XY
2
CD
Matched machine overlay on all layouts
Scanner Performance 1
1.7nm
9
• Single acquisition of ±1st order, Multi-layer targets, and Double exposure targets • Overlay & Focus combined 40%+α lower CAPEX
<Date>
Confidential YieldStar 350E metrology improved throughput, accuracy, process robustness and application space
Sampling points
• Higher source power • RGB alignment source • Higher detection NA
Accuracy
• Bottom grating asymmetry • Self-referencing • Higher wavelength for opaque
layers
Wide application
• μDBO/μDBF • DBO/DBF • Small Spot ADI/AEI CD
Robustness
YS350E spot-size
YS250D spot-size
Accuracy Sampling points
Robustness Applications
Multi layer target
ASML Confidential
YieldStar OCD - Angular Resolved, High-NA Technology Fast, High-order Dose & ADI/AEI Fingerprint Monitor & Corrections
7 September 2015
Public
Slide 10
SE=Spectroscopic Ellipsometry; RE=Normal Incidence Reflectometry
Improved Fingerprint Correction
*10X10um available on YieldStar 350
Lower Noise @ Performance High Order Sampling with Small Inspection Areas*
30% full wafer CDU 3σ improvement with YS
Nor
mal
ized
In
trafie
ld C
DU
3σ
Baseline High-Order Correction
CD-SEM YieldStar Baseline High-Order
Correction Nor
mal
ized
Intra
field
CD
U 3σ
2X Less Metrology
Noise 45%
Correction Improvement
25% Correction Improvement
9/7/2015
Public Slide 11
PR
BARC
A
E
SiB
C
D
PR
BARC
A
E
SiB
C
D
Process/ Litho Input
• Process Stack • Material properties • Scanner aberrations • Illumination Pupil • Design rules • OPC Model • Process Variations
Computational target design optimization
(D4C)
• Build stack • Set conditions • Run simulations • Rank available targets • Predict improvements
Holistic metrology flow optimizes target design and recipe selection for optimal alignment and overlay
Reticle tape-out and metrology strategy
• Optimized Metrology
target GDS • Optimized Alignment
target GDS • Measurement recipe
recommendations • Alignment Tree Strategy
Monitoring metrology Performance
(Litho InSight)
• Tool health • Overlay Accuracy • Stack variations • Device Matching stability
Target selection and Recipe Optimization
(YieldStar)
• Automated flow • Overlay accuracy
reference based on overlay data of multiple wavelengths and polarization
• Robust for bottom grating asymmetry
Detectability
Process Robustness Device matching
9/7/2015
Public Slide 12
Printability
The holistic approach for robust alignment and metrology targets giving best precision and accuracy
Larger target process window Stronger and more robust signal
Accurate target behaves like device cell Target aberration sensitivity matches device
Detectability
Process Robustness Device matching
9/7/2015
Public Slide 13
Printability
Larger target process window Stronger and more robust signal
Accurate target behaves like device cell Target aberration sensitivity matches device Target optimization can deliver better overlay and potentially higher yield
SPIE 2015 : Improving overlay with computationally designed metrology targets. SK hynix, Young-Sik Kim, et. al.
The holistic approach for robust alignment and metrology targets giving best precision and accuracy
ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)
Ramp Process development HVM
Optimal models and sampling
Static process setup
Overlay and Imaging On-Product Performance
3
Reduce L2L , W2W
3 Dynamic process setup
waf
er 2
waf
er
lot 2 lot
machine 2 machine
Reduce Impact of Variations
4 Process control & monitoring
Excursion control thru scanner, metro & process KPI monitoring
Maintain Performance
5
Public
Optimal metrology accuracy, precision and throughput
Metrology setup
YieldStar and Smash Metrology
µDBO
µDBF
SMASH XY
2
CD
Matched machine overlay on all layouts
Scanner Performance 1
1.7nm
Overlay Optimizer 2 19par interface shows 0.4nm OPO improvement in matched machine mode
Overlay Optimizer 1 Simulation - self corrected
3.8; 3.0nm
Add 19par OVO2 interface
Layer 1 -- NXT:1960 Layer 2 -- NXT:1970
3.4, 2.8nm
Overlay Optimizer 2 Simulation - self corrected
ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)
Ramp Process development HVM
Optimal models and sampling
Static process setup
Overlay and Imaging On-Product Performance
3
Reduce L2L , W2W
3 Dynamic process setup
waf
er 2
waf
er
lot 2 lot
machine 2 machine
Reduce Impact of Variations
4 Process control & monitoring
Excursion control thru scanner, metro & process KPI monitoring
Maintain Performance
5
Public
Optimal metrology accuracy, precision and throughput
Metrology setup
YieldStar and Smash Metrology
µDBO
µDBF
SMASH XY
2
CD
Matched machine overlay on all layouts
Scanner Performance 1
1.7nm
7 September 2015 Slide 17
TwinScan NXT
customer Fab Host
(APC and /or MES)
Product wafers
Holistic Lithography delivers < 4nm On-Product matched overlay for Logic customers
YieldStar Baseliner wafers YieldStar
Litho InSight
Customer 10p R2R
HOCPE corrections on R2R residuals
Public
7 September 2015 Slide 18
TwinScan NXT
customer Fab Host
(APC and /or MES)
Product wafers
Holistic Lithography delivers < 4nm On-Product matched overlay for memory customers
YieldStar Baseliner wafers YieldStar
Litho InSight HOCPE corrections
4.2 nm 5.3 nm
OVL
(m+3
s) [n
m]
4.7 nm 3.8 nm
Lot
POR LIS POR LIS
x y
Public
ASML holistic lithography: supports the setup, control & optimization of litho performance (Overlay, Focus, Dose)
Ramp Process development HVM
Optimal models and sampling
Static process setup
Overlay and Imaging On-Product Performance
3
Reduce L2L , W2W
3 Dynamic process setup
waf
er 2
waf
er
lot 2 lot
machine 2 machine
Reduce Impact of Variations
4 Process control & monitoring
Excursion control thru scanner, metro & process KPI monitoring
Maintain Performance
5
Public
Optimal metrology accuracy, precision and throughput
Metrology setup
YieldStar and Smash Metrology
µDBO
µDBF
SMASH XY
2
CD
Matched machine overlay on all layouts
Scanner Performance 1
1.7nm
Engineering & diagnostic capability to maintain and control performance in high volume
Litho Clusters
Customer MES / APC server
Design database
Design & process info
Dashboard Fingerprint analysis Trends, down drilling Budget breakdown
LCP
Data logistics Monitoring, diagnostics
Dat
a ch
anne
l
Litho InSight software is supporting engineers in-house to deliver
• Dashboards • Analyses • Trending • Data management
7 September 2015 Slide 20
Public
Thanks to: Jim Kavanagh, Chris Kim, Stuart Young, Steven Welch, Henk Niesing, Chris de Ruiter, Jan Mulkens, Jaap Karssenberg, Manouk Rijpstra, Martin Ebert, Stefan Weichselbaum, Christophe Fouquet, Gary Zhang, Paul Tuffy, Kevin Ryan & Lotte Williams