tcad: suprem,piscessuprem, piscesbandi.cbnu.ac.kr/~ysk/devnot6.pdf · 2011-04-10 · tcad:...
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TCAD: SUPREM, PISCESTCAD SUPREM, PISCES
김 영 석
충북대학교 전자정보대학
2012.9.1
E il ki @ b kEmail: [email protected]
전자정보대학 김영석 1
TCADTCAD(Technology Computer Aided Design, Technology CAD)
Electronic design automation
Process CAD
M d l t (diff i I/I) > Si l t d iModels process steps (diffusion, I/I) => Simulates device structure (junction depth, doping profiles), e.g., SUPREM
Device CAD
Models devices based on fundamental physics (mobilities, doping profiles) => Simulates device behavior, e.g., PISCES
Ci it CADCircuit CAD
Compact Modeling of the device (not based on fundamental physics) => Simulates circuit behavior, e.g., SPICEp
전자정보대학 김영석 2
TCAD
From WikiDFM: Design For Manufacturing PSM: Phase Shift Masking
전자정보대학 김영석 3
DFM: Design For Manufacturing, PSM: Phase Shift MaskingCMP: Chemical Mechanical Planarization, STI: Shallow Trench Isolation
TCAD Work Flow
전자정보대학 김영석 4
http://www3.ntu.edu.sg/eee/eee6/LectureNotes/E425/index.htm
Process Simulation
전자정보대학 김영석 5
Process Simulation
ModelsInput- Grid Generation
OutputS / h- Diffusion
- OxidationI l t ti
- Grid Generation- Mask Definition- Structure Initialization
- Structure/Mesh- Doping profiles
Junction Depths- Implantation- Deposition/masking
- Process Step Spec.- Junction Depths
/masking/etching
전자정보대학 김영석 6
Process SimulatorsProcess flow simulators are tools which simulate the full semiconductor manufacturing flow
Process Simulators
SUPREM3: 1-D Standford UnivSUPREM3: 1-D, Standford Univ.
SUPREM4: 2-D
FEDSS: IBM
PROPHET: AT&T
DIOS: ISE (Swiss)
TSUPREM4: commertial, based on SUPREM4
TAURUS-PROCESS
ATHENA: commertial based on SUPREM4ATHENA: commertial, based on SUPREM4
FLOOPS: U. of Florida
Equipment Simulators
ILLUM2D/3D: the Institute for Microelectronics at the Technical University of Vienna, lithography
SPLAT/SAMPLE2D/3D PROLITH SOLID E ACESSPLAT/SAMPLE2D/3D, PROLITH, SOLID E, ACES
전자정보대학 김영석 7
http://www.iue.tuwien.ac.at/phd/minixhofer/node4.html
Summary of NMOS Process Flow
전자정보대학 김영석 8
TCAD InputLayout
P C ditiProcess Conditions
Diffusion: Temp., Pressure, Time, Flow Rates
Oxidation: Temp. Ramps, Gas RampsOxidation Temp. Ramps, Gas Ramps
Ion Implantation: Dose, Energy, Tilt, Revolving, Beam Div., Ionization Level
전자정보대학 김영석 9
NMOS Process Simulations with TSUPREM4
Mesh Generations
전자정보대학 김영석 10
NMOS Process Simulations with TSUPREM4
Oxidation
전자정보대학 김영석 11
NMOS Process Simulations with TSUPREM4
Nitride Deposition p s
전자정보대학 김영석 12
NMOS Process Simulations with TSUPREM4
Nitride Etch
전자정보대학 김영석 13
NMOS Process Simulations with TSUPREM4
Field Oxidation
전자정보대학 김영석 14
NMOS Process Simulations with TSUPREM4
Nitride Remove
전자정보대학 김영석 15
NMOS Process Simulations with TSUPREM4
Field Implant Profiles p s
전자정보대학 김영석 16
NMOS Process Simulations with TSUPREM4
VTH Adjust Implant Profiles j s p s
전자정보대학 김영석 17
NMOS Process Simulations with TSUPREM4
Before Gate Oxidation
전자정보대학 김영석 18
NMOS Process Simulations with TSUPREM4
Gate Oxidation
전자정보대학 김영석 19
NMOS Process Simulations with TSUPREM4
Polysilicon Gate Depositionys p s
전자정보대학 김영석 20
NMOS Process Simulations with TSUPREM4
Gate Poly Etch y
전자정보대학 김영석 21
NMOS Process Simulations with TSUPREM4
LDD and S/D Implant p
전자정보대학 김영석 22
NMOS Process Simulations with TSUPREM4
LDD Spacer Oxide Etch p
전자정보대학 김영석 23
NMOS Process Simulations with TSUPREM4
Metal Etch
전자정보대학 김영석 24
Device Simulation
전자정보대학 김영석 25
Device Simulation
Basic Eqs.i i ’
Input- Structure/Mesh
OutputS / h- Poission’s eq.
- Continuity eq.Drift Diffusion eq
- Structure/Mesh- Doping Profiles- Structure Initialization
- Structure/Mesh- Doping Profiles
Junction Depths- Drift-Diffusion eq.Models- Rec-Gen
- Process Step Spec.- Junction Depths
- Mobility- F-D, Boltzmann
전자정보대학 김영석 26
Device SimulatorsGeneric Device Simulators
PISCES 2ET: Standford Univ.
FIELDAY
PADREPADRE
MINIMOS-NT
MEDICI: based on PISCESMEDICI: based on PISCES
DESSIS
ATLAS
FLOODS
Specialized Device Simulators
MINIMOS: f MOSFETMINIMOS: for MOSFET
PISCES: for MOSFET, Standford Univ.
SEQUOIASEQUOIA
BIPOLE: for Bipolar
전자정보대학 김영석 27
NMOS Device Simulations with MEDICI
Initial Grid
전자정보대학 김영석 28
NMOS Device Simulations with MEDICI
Doping Regridp g g
전자정보대학 김영석 29
NMOS Device Simulations with MEDICI
Potential Regrid g
전자정보대학 김영석 30
NMOS Device Simulations with MEDICI
Impurity Profilesp y s
전자정보대학 김영석 31
NMOS Device Simulations with MEDICI
Impurity Contoursp y s
전자정보대학 김영석 32
NMOS Device Simulations with MEDICI
Gate Characteristics s s
전자정보대학 김영석 33
NMOS Device Simulations with MEDICI
Drain Characteristics s s
전자정보대학 김영석 34
NMOS Device Simulations with MEDICI
Drain Characteristics: Potential Contours s s s
전자정보대학 김영석 35
NMOS Device Simulations with MEDICI
Substrate Currents
전자정보대학 김영석 36
NMOS Device Simulations with MEDICI
Gate Current
전자정보대학 김영석 37
NMOS Device Simulations with MEDICI
Drain Current Snapback p
전자정보대학 김영석 38
NMOS Device Simulations with MEDICI: Ex2
Definition of Mesh, Electrodes, Contacts s , s, s
전자정보대학 김영석 39
NMOS Device Simulations with MEDICI: Ex2
Doping Profilesp g s
전자정보대학 김영석 40
NMOS Device Simulations with MEDICI: Ex2
ID-Vg Curveg
전자정보대학 김영석 41