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The top documents tagged [monolayer growth]
Formation of Sub-10 nm width InGaAs finFETs of 200 nm Height by Atomic Layer Epitaxy *D. Cohen-Elias 1, J.J.M. Law 1, H.W. Chiang 1, A. Sivananthan 1,
233 views
Ellipsometric characterization of porous Silicon coated with atomic layer deposited ZnO Zsófia Baji, János Volk, Attila Lajos Tóth, Zoltán Lábadi, Zsolt
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Nadia Dubé *, Alan Cheng * and Michel L. Tremblay * McGill Cancer Centre and Department of Biochemistry, McGill University, 3655 Promenade Sir-William-Osler,
237 views
Proposal for an FP6 STREP FET based on nanodevice ideas with SiC
35 views
Proposal for an FP6 STREP FET based on nanodevice ideas with SiC
44 views