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The top documents tagged [interface traps]
Ppt 1
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1 Material Dependence of NBTI Stress & Recovery in SiON p-MOSFETs S. Mahapatra, V. D. Maheta, S. Deora, E. N. Kumar, S. Purawat, C. Olsen 1, K. Ahmed 1,
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1 Chapter 2 CARRIER AND DOPING DENSITY. 2 2.1 Introduction Carrier density is related to the resistivity but is usually measured independently. Carrier
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Radiation Effects in Microelectronics EE-698a Course Seminar by Aashish Agrawal
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1 OXIDE AND INTERFACE TRAPPED CHARGES, OXIDE THICKNESS CHAPTER 6
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" On trying daring ideas with Herb". P.M.Petroff Professor Emeritus Materials Department, University of California, Santa Barbara
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Radiation Effects in Microelectronics
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A Top-down Design Methodology with Embedded Aging Sensors for Robust System Design
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" On trying daring ideas with Herb". P.M.Petroff Professor Emeritus Materials Department , University of California , Santa Barbara
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