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Activity 1 : Introduction to CCDs. In this activity the basic principles of CCD Imaging is explained. Simon Tulloch
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1 POLYGENERATION OF ELECTRICITY, HEAT and ULTRA PURE WATER for SEMICONDUCTOR INDUSTRY Chuanfeng Liu Supervisors: Andrew Martin EGI KTH Aapo Sääsk Xzero
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O RD_FASE2 – Slides per ClaraG. Darbo – INFN / Genova Roma, 17 September 2014 Pixel : LS1, Run2 and Fase 2 Slides per Clara 17 September 2014 G. Darbo–
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Selex - 2009 - GaN-HEMT Technology Development for Next Generation AESA Systems Applications
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Ch28 microelectronic devices
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6 July 2010 Thomas Bergauer (HEPHY Vienna) Status of Double Sided Silicon Sensors B2GM
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16th April 2008R. Bates Glasgow University Experience with an industrial vendor in the manufacture of 3D detectors R. Bates, C. Fleta, D. Pennicard, C
219 views
Copyright Prentice-Hall Chapter 28 Fabrication of Microelectronic Devices
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NIU Workshop R. Frey1 Reconstruction Issues for Silicon/Tungsten ECal R. Frey U. Oregon NIU Workshop, Nov 8, 2002
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LCWS2002 R. Frey1 Silicon/Tungsten ECal for the SD Detector M. Breidenbach, D. Freytag, G. Haller, M. Huffer, J.J Russell Stanford Linear Accelerator Center
215 views
Background on Gigabit Ethernet ECE 4006 C G3: Karen Cano, Scott Henderson, Di Qian Dec, 5 2002
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Hans-Günther Moser MPI für Physik TIPP 2011 Satellite Meeting on 3D Integration June 14, 2011 3D Technology Developments in Europe and EU Supported Activities
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