table of contents i - university of texas at arlington · table of contents ..... i introduction...

MEMScAP

i

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MEMS Pro User Guide Contents Index

Table Of Contents

Table Of Contents .......................................

Introduction ...........................................................

MEMS Pro System ................................................

Total Solution .................................................................

Tool Flow ........................................................................

Schematic Capture (S-Edit) ........................................

Table Of Contents

ii

Simulator (T-Spice Pro) ...........................................................6

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ration) 10

ut) ...11

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MEMS Pro User Guide Contents Index Help

Layout Editor (L-Edit) .................................................

User-programmable Interface ....................................

Layout vs. Schematic (LVS) ......................................

3D Modeler .....................................................................

MEMS Block Place and Route ..................................

MEMS Library (MEMSLib) ......................................

Foundry Support ............................................................

Embedded features in ANSYS ..................................

Reduced Order Modeling (Macro-Model Gene

Automatic mask layout generation (3D to Layo

What’s New in Version 3.0 .............................

Documentation Conventions .........................

Table Of Contents

iii

MEMS Pro Tutorial ............................................16

...........17

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Introduction .................................................................

The Design Example ....................................................

Creating a Schematic ..........................................

Launching S-Edit ..........................................................

Opening the File ............................................................

Creating a New Module ...............................................

Instantiating Components ...........................................

Instantiating a Plate ...............................................

Instantiating Comb-drives ....................................

Instantiating Folded Springs ................................

Wiring Objects ...............................................................

Zooming the View ....................................................

Instantiating Voltage Sources ....................................

Table Of Contents

iv

Placing Global Nodes ..............................................................29

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Editing Object Properties ............................................

Labeling Nodes ..............................................................

Adding Simulation Commands .................................

Exporting a Netlist .................................................

Tutorial Breakpoint .......................................................

Simulating from a Netlist .................................

Simulating with T-Spice ..............................................

Probing a Waveform ...........................................

Viewing a Waveform ...........................................

Chart Setups ...................................................................

Trace Manipulation .......................................................

Generating a Layout ............................................


Launching L-Edit ..........................................................

Table Of Contents

v

Opening the File .......................................................................57

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...........65

...........66

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...........70

...........73

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Creating Components ...................................................

Using the MEMS Library Palette ........................

Generating the Plate ..............................................

Generating the Comb-drives ................................

Editing an Already Generated Component ......

Attaching Components ...........................................

Generating the Folded Springs ............................

Generating the Ground Plate ...............................

Generating the Bonding Pads ..............................

Viewing Properties .......................................................

Viewing a 3D Model .............................................


Launching L-Edit and Opening a File .....................

Process Definition .........................................................

Table Of Contents

vi

Importing the Process Definition ...................................74

...........78

...........78

...........78

...........80

...........82

...........82

...........86

...........86

...........88

...........89

...........91

...........95

...........95


3D Model View .............................................................

Generating the 3D Model .....................................

Manipulating the 3D Model View .......................

Multiple Views .........................................................

Viewing the 3D Model ...........................................

3D Cross-section ...........................................................

Drawing Tools ............................................................


Drawing a Wire .............................................................

Drawing a Torus ............................................................

Drawing a Curved Polygon ........................................

Drawing a Circle ...........................................................

Drawing a Box ...............................................................

Table Of Contents

vii

MEMS Pro Toolbar .............................................97

...........98

.........103

.........103

.........105

.........109

.........109

.........111

.........112

.........113

.........114

.........114

.........116

.........118


Introduction .................................................................

Library Menu .............................................................

Library Palette ................................................................

Edit Component .............................................................

3D Tools Menu ..........................................................

Editing a Process Definition .......................................

Viewing a 3D Model ....................................................

Deleting a 3D Model ....................................................

Exporting a 3D Model .................................................

Easy MEMS Menu ................................................

Creating holes in a plate ..............................................

Copying objects .............................................................

Splines ...............................................................................

Table Of Contents

viii

Creating Splines .....................................................................118

.........120

.........121

.........121

.........122

.........122

.........123

.........124

.........124

.........124

.........126

.........127


Editing Splines ...............................................................

Tools ...................................................................................

Viewing Vertex Coordinates ......................................

Viewing Vertex Angles ...............................................

Viewing Vertex Information ......................................

Clearing Vertex Information ......................................

Help .....................................................................................

MEMS Pro User Guide ................................................

About MEMS Pro .........................................................

Splines ..............................................................................

Introduction .................................................................

Table Of Contents

ix

Understanding Splines ..........................................................127

.........129

.........132

.........132

.........134

.........137

.........139

.........141

.........146

.........147

.........148

.........149


Create Spline Dialog Box .................................

Creating Splines .......................................................

Creating Splines from Angled Wires .......................

Interpolation .............................................................

Approximation .........................................................

Re-creating Angled Wires ..........................................

Creating Splines from Polygons ................................

Editing Splines ...........................................................

MEMS Pro Utilities ..................................

Introduction .................................................................

Running Macros in L-Edit .............................

Table Of Contents

x

Loading the Macros ...............................................................149

.........150

.........150

.........150

.........152

.........154

s ....157

.........157

.........159

.........161

.........163

.........164

.........164

.........164

.........167


Generating Polar Arrays .................................

Description ......................................................................

Accessing the Function ................................................

Parameters .......................................................................

Generating Holes in a Plate ...........................

Viewing Vertex Coordinates and AngleViewing Vertex Coodinates .......................................

Viewing Vertex Angles ..............................................

Viewing Vertex Information ......................................

Clearing Vertex Information ......................................

Approximating All-angle Objects ............

Description ......................................................................

Accessing the Macro ....................................................

Parameters .......................................................................

Table Of Contents

xi

Generating Concentric Circles ............................168

.........168

.........168

.........169

.........169

.........169

.........170

.........170

.........171

.........172

.........173

.........173


Location ...........................................................................

Description ......................................................................

Accessing the Macro ....................................................

Parameters .......................................................................

Input File Format ...........................................................

Syntax .........................................................................

Example .....................................................................

Parameters .......................................................................

3D Modeler ..............................................................

Introduction .................................................................

MCNC MUMPs Thermal Actuator ..........................

Table Of Contents

xii

MCNC MUMPs Rotary Motor ...........................................175

.........177

.........180

.........182

.........182

.........182

.........184

.........186

.........188

.........190

.........190

.........191

.........192

.........192

.........195


Analog Devices iMEMS ADXL Accelerometer ...

Bulk Micromachined Diaphragm ..............................

Accessing 3D Models ...........................................

3D Model Input .............................................................

3D Modeler Output .......................................................

Accessing the 3D Tools ...............................................

Defining Colors for 3D Models ...................

Viewing 3D Models from Layout .............

3D Model View User Interface ....................

Application Elements ...................................................

Title Bar ...........................................................................

Menu Bar .........................................................................

File Menu ..................................................................

View Menu ................................................................

Table Of Contents

xiii

Tools Menu ........................................................................204

.........205

.........206

.........207

.........209

.........210

.........213

.........215

.........218

.........220

.........223

.........225

.........226

.........228

.........228


Setup Menu ...............................................................

Window Menu ..........................................................

Help Menu .................................................................

3D Model Tool Bar .......................................................

Palette ..............................................................................

Status Bar ........................................................................

Viewing a Cross-section ....................................

Deleting 3D Models ...............................................

Exporting 3D Models ..........................................

Linking to ANSYS .................................................

Editing the Process Definition .....................

Importing the Process Definition ..............................

Process Identification ...................................................

Editing the Process Steps List ....................................

Table Of Contents

xiv

Enable .................................................................................229

.........229

.........229

.........230

.........230

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.........231

.........234

.........235

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Display 3D model for this step ............................

Move Step ..................................................................

Add Step .....................................................................

Delete Step ................................................................

Editing Individual Process Steps ...............................

Wafer ................................................................................

Deposit .............................................................................

DepositType = CONFORMAL ............................

DepositType = SNOWFALL .................................

DepositType = FILL ...............................................

Etch ...................................................................................

Orientation Considerations ..................................

EtchType = SURFACE ..........................................

EtchType = BULK ..................................................

Table Of Contents

xv

EtchType = SACRIFICIAL ............................................248

.........249

.........252

.........253

.........253

.........254

ers .254

ns ..254

.........256

.........257

.........257

.........257


MechanicalPolish ..........................................................

3D Modeler Error Checks ..............................

Checking if the 3D Model is Out-of-Date .........

Checking if a Process Definition is used ...........

Checking for Process with Derived Layers ......

Checking for the Existence of all Required Lay

Checking for Wires or Self-Intersecting Polygo

ANSYS Tutorial ..............................................

Introduction .................................................................

Launching L-Edit ..........................................................

Opening the File ............................................................

Table Of Contents

xvi

Viewing the 3D Model .........................................................258

.........259

.........261

.........261

.........263

.........264

.........265

.........269

.........272

.........273

.........276

.........277

.........278


Exporting the 3D Model ..............................................

Reading the 3D Model in ANSYS ............

Viewing the 3D Model in ANSYS ...........................

Setting Material Properties .........................................

Adding an Element Type ............................................

Setting Boundary Conditions .......................

Meshing the Model ................................................

Running the Analysis ..........................................

Displaying the Results ........................................

Computing the Spring Constant ...............

Entering Models under Windows NT ..

ANSYS to Layout Generator ....

Table Of Contents

xvii

Introduction ..........................................................................279

.........281

.........281

.........285

.........287

.........291

.........292

.........292

.........295

.........296

.........297

.........298

.........299

.........303

.........315


3-D to Layout Tools ..............................................

Overview .........................................................................

Import Mems ..................................................................

Creation of Volumes ....................................................

Deletion of Volumes ....................................................

Addition of Volumes ....................................................

Component Names ........................................................

Saving Mems ..................................................................

Unit ...................................................................................

Exporting a CIF File .....................................................

The LAYOUT Menu Item ..........................................

The Layout Generator Program ...............

Definition of a Technology File ..................

Limitations ....................................................................

Table Of Contents

xviii

Negative Mask Without Hole .............................................315

.........315

.........315

.........315

.........316

.........316

.........323

.........326

.........334

.........335

.........335

.........337


Substrate ..........................................................................

Splines ..............................................................................

Boolean Operations on Layers ...................................

Tutorial ............................................................................

Import Mems ..................................................................

3D Modifications ..........................................................

The Layout Generator Program .................................

Reduced Order Modeling ...............

User Manual ................................................................

Introduction ....................................................................

R.O.M. Menu .................................................................

Table Of Contents

xix

Condensation Algorithm ......................................................340

.........340

.........341

Systems 348

.........349

.........353

.........370

d Cases 370

.........372

.........374

oad Cases

.........382

.........385

imulator 392


Fundamentals ...........................................................

Running the Condensation ....................................

Reduction of Electrostatically Coupled Structural

Fundamentals ...........................................................

Running the Reduction Algorithm .......................

ROM Tutorial ............................................................

Condensation: Reduction with Single DOF & Loa

Model Generation ...................................................

Performing Reduction ............................................

Condensation: Reduction with Multiple DOFs & L

380



Simulating a reduced model using the SPICE s

Table Of Contents

xx

Reduction of Electrostatically Coupled Structural Systems 408

.........410

.........411

imulator 422

.........436

.........437

.........439

.........453

.........454




Simulating a reduced model using the SPICE s

Optimization Tutorial ...........................

Introduction .................................................................

Setting up the Optimization ..........................

Running the Optimization ..............................

Examining the Output ........................................

Table Of Contents

xxi

Verification .......................................................................457

.........458

.........459

.........463

.........468

.........471

.........474

.........475

.........475

.........475

.........476


Introduction .................................................................

Adding Connection Ports ................................

Extracting Layout ..................................................

Extracting Schematic for LVS ....................

Comparing Netlists ................................................

Command Tool .................................................

Introduction .................................................................

Usage in S-Edit ..............................................................

Schematic Mode .......................................................

Symbol Mode ............................................................

Table Of Contents

xxii

Property Creation ............................................................476

.........477

.........477

.........478

.........479

.........482

.........482

.........483

.........483

.........484

l ....486

.........488


Accessing the Command Tool .....................

Schematic Tools Toolbar ............................................

Module Menu .................................................................

Command Tool Dialog .......................................

Schematic Object Creation ............................

Template Module .....................................................

Symbol Mode ..............................................................

Schematic Object in Symbol Mode ..........................

Create Property Dialog ................................................

Block Place and Route Tutoria

Initializing the Design .........................................

Table Of Contents

xxiii

Routing the Design .........................................................499

........506

.........507

.........508

.........511

.........512

.........514

.........514

.........518


Extending the MEMS Library

Introduction .................................................................

Schematic Symbols ................................................

SPICE Models ............................................................

Application Example ....................................................

Layout Generators .................................................

Sample Layout Generator ...........................................

MEMSLib Reference .............................

Table Of Contents

xxiv

Introduction ..........................................................................519

.........522

.........524

.........526

.........528

.........530

.........532

OMB_1,

.........534

M_2)) 535

.........537

pe 1

e1 ...541


Acknowledgment ..........................................................

Using the MEMS Library ...............................

Accessing the MEMS Library Palette ..

Show Details Button .....................................................

Editing the Generated Layout Parameters ..............

Active Elements ........................................................

Linear Electrostatic Comb Drive Elements (S_LC

S_LCOMB_2) 532

Linear Electrostatic Comb Drive Elements ............

Linear Side Drive Elements (S_LSDM_1, S_LSD

Linear Side Drive Elements ........................................

Unidirectional Rotary Comb Drive Elements - Ty

(S_RCOMBU_1, S_RCOMBU_2) 538

Unidirectional Rotary Comb Drive Elements-Typ

Table Of Contents

xxv

Unidirectional Rotary Comb Drive Elements - Type 2

pe2 .545

OMBD_1,

.........549

DM_2) 550

.........553

M_2) 554

.........556

SDM_2) 557

.........559

.........560

.........560

.........562


(S_RCOMBUA_1, S_RCOMBUA_2) 542

Unidirectional Rotary Comb Drive Elements - Ty

Bidirectional Rotary Comb Drive Elements (S_RC

S_RCOMBD_2) 546

Bidirectional Rotary Comb Drive Elements ..........

Rotary Comb Drive Elements (S_RCDM_1, S_RC

Rotary Comb Drive Elements ....................................

Rotary Side Drive Elements (S_RSDM_1, S_RSD

Rotary Side Drive Elements .......................................

Harmonic Side Drive Elements (S_HSDM_1, S_H

Harmonic Side Drive Elements .................................

Passive Elements ......................................................

Journal Bearing Elements 1 (S_JBEARG_1) ........

Journal Bearing Elements 1 ........................................

Table Of Contents

xxvi

Journal Bearing Elements 2 (S_JBEARG_2) .................563

.........565

_LCLS_1,

.........568

_LCLSB_1,

.........571

S_1,

.........574

RAL_1,

.........577

.........578


Journal Bearing Elements 2 ........................................

Linear Crab Leg Suspension Elements - Type 1 (S

S_LCLS_2) 566

Linear Crab Leg Suspension Elements - Type 1 ...

Linear Crab Leg Suspension Elements - Type 2 (S

S_LCLSB_2) 569

Linear Crab Leg Suspension Elements - Type 2 ...

Linear Folded Beam Suspension Elements (S_LFB

S_LFBS_2) 572

Linear Folded Beam Suspension Elements ............

Dual Archimedean Spiral Spring Elements (S_SPI

S_SPIRAL_2) 575

Dual Archimedean Spiral Spring Elements ............

Test Elements .............................................................

Table Of Contents

xxvii

Area-Perimeter Dielectric Isolation Test Structure Element

Element 580

TEST_1) 581

.........583

TEST_2) 584

.........586

s

s .....589

1,

.........592

_1,


(S_APTEST_1) 578

Area-Perimeter Dielectric Isolation Test Structure

Crossover Test Structure Element - Type 1 (S_CO

Crossover Test Structure Element - Type 1 ...........

Crossover Test Structure Element - Type 2 (S_CO

Crossover Test Structure Element - Type 2 ...........

Euler Column (Doubly Supported Beam) Element

(S_EUBEAM_1, S_EUBEAM_2) 587

Euler Column (Doubly Supported Beam) Element

Array of Euler Column Elements (S_EUBEAMS_

S_EUBEAMS_2) 590

Array of Euler Column Elements ..............................

Guckel Ring Test Structure Elements (S_GURING

S_GURING_2) 593

Table Of Contents

xxviii

Guckel Ring Test Structure Elements ...............................595

.......596

.........598

.........599

.........600

.........601

.........601

.........603

.........604

.........606

.........607

.........609

.....) 610

.........611

.........612


Array of Guckel Ring Elements (S_GURINGS_1)

Array of Guckel Ring Elements ................................

Multilayer Pad Element (S_PAD_1) ........................

Multilayer Pad Element ...............................................

Resonator Elements ..............................................

Plate (S_PLATE_1) ......................................................

Plate ..................................................................................

Comb Drive (S_LCOMB_3) ......................................

Comb Drive (comb) ......................................................

Folded Spring (S_LFBS_3) ........................................

Folded Spring .................................................................

Ground Plate (S_GDPLATE_1..............................

Ground Plate ...................................................................

Bonding Pad (S_PAD_2) ............................................

Table Of Contents

xxix

Bonding Pad ............................................................................613

.........614

.........615

.........616

.........618

.........619

.........620

.........621

.........622


Technology Setup .........................................

Introduction .................................................................

MCNC MUMPs ........................................................

Device Examples ...........................................................

Analog Devices/MCNC iMEMS ................

Sandia ITT ....................................................................

MOSIS/CMU ..............................................................

MOSIS/NIST ..............................................................

Table Of Contents

xxx

Process Definition .................................................623

.........624

.........628

.........628

.........628

.........629

.........629

.........630

.........630

.........630

.........631

.........634

.........634

.........634


Introduction .................................................................

Process Steps ...............................................................

ProcessInfo .....................................................................

Syntax .........................................................................

Example .....................................................................

Description ...............................................................

Wafer ................................................................................

Syntax .........................................................................

Example .....................................................................

Description ...............................................................

Deposit .............................................................................

Syntax .........................................................................

Example .....................................................................

Table Of Contents

xxxi

Description ........................................................................635

.........636

.........639

.........642

.........644

.........647

.........647

.........647

.........648

.........649

.........651

.........654

.........657

.........659

.........659


DepositType = CONFORMAL ............................

Thickness and Scf ....................................................

DepositType = SNOWFALL .................................

DepositType = FILL ...............................................

Etch ...................................................................................

Syntax .........................................................................

Example .....................................................................

Description ...............................................................


EtchType = SURFACE ..........................................

EtchType = BULK ..................................................

EtchType = SACRIFICIAL ...................................

MechanicalPolish ..........................................................

Syntax .........................................................................

Table Of Contents

xxxii

Example ..............................................................................659

.........660

.........664

.........664

.........664

.........665

.........666

.........669

.........669

.........669

.........670

.........675

.........676


Description ...............................................................

ImplantDiffuse ...............................................................

Syntax .........................................................................

Example .....................................................................

Description ...............................................................


Grow .................................................................................

Syntax .........................................................................

Example .....................................................................

Description ...............................................................

Editing the Process Definition .....................

Process Definition Example: MUMPs ..

Table Of Contents

xxxiii

INDEX ......................................................................................683


MEMScAP

1

2

5

12

13


1 Introduction

��MEMS Pro System

��Tool Flow

��What’s New in Version 3.0

��Documentation Conventions

Introduction MEMS Pro System

2

stems (MEMS) andant bottleneck in thegy.

ombines aspects ofAD.

ed on the following

ulti-physics circuit

ription levels: theel (SPICE, HDL-A,sk layout);

r other 3D analysisners, IC designers,ers to share criticallanguage for each


MEMS Pro System

The interdisciplinary nature of Micro-Electro-Mechanical Sythe expertise required to develop the technology is a significtimely design of new products incorporating MEMS technolo

This issue calls for a new generation of design tools that cEDA and mechanical / thermal / fluidic / optical / magnetic C

MEMSCAP approach to solving this design bottleneck is basprinciples and features:

� Supporting multiple flows: for the component engineer, mdesigner and for the system engineer;

� Allowing data exchange between the different descstructural level (FEM/BEM), the system/behavioral levVHDL-AMS, Verilog-AMS), and the physical level (ma

� Targeting key features for MEMS specific design.

MEMS Pro, in combination with ANSYS Multiphysics oprograms, enables system designers, MEMS circuit desigprocess engineers, MEMS specialists, and packaging enginedesign and process information in the most relevant contributor.


3

The MEMS Pro package includes a schematic entry tool, an analog and mixedistical analyzer, anout editing tool, ancement and routingxtraction tool (fromtracted from layoutEMS examples.

compass a 3D solid, a 3D solid model

editor, true curveding the MEMS Pro

k layout generation Layout), as well asrdware description

nd VHDL industryy mask makers andonal converter). 3D


analog / digital circuit level behavioral simulator, a statoptimizer, a waveform viewer, a full-custom mask-level layautomatic layout generator, an automatic standard cell platool, a design rule checking feature, an automatic netlist elayout or schematic), a comparison tool between netlists exand schematics (Layout Versus Schematic), and libraries of M

MEMS specific key features also available in MEMS Pro enmodel generator using mask layout and process informationviewer with cross-section capability, a process descriptiondrawing tools and automation of time consuming tasks usEasy MEMS features.

Embedded features within ANSYS 5.6 allow automatic masfrom an ANSYS 3D Model and process description (3D toautomatic MEMS behavioral Model generation in halanguages (Reduced Order Modeling).

Total Solution

S-Edit schematics are easily transferred to EDIF, SPICE aformats. L-Edit layout exports to standard formats accepted bfoundries including GDS II, CIF and DXF (through an opti


4

models also can be generated from layout and process definition and viewed inrted in SAT format

D, ANSYS, Ansoftthose from CFDRClity to generate CIFng feature generatesnd accurate system


the L-Edit environment. These 3D models may also be expoand directly used with third party tools such as AutoCAHFSS, Maxwell 3D, ABAQUS, and MSC/NASTRAN and and Coyote Systems. Now, Version 3.00 offers the possibiformat layouts from 3D models. The Reduced Order ModeliMEMS behavioral models in SPICE and HDL-A for fast alevel simulations.

Introduction Tool Flow

5

ferent component of


Tool Flow

Each stage of the MEMS design process is addressed by a difthe MEMS Pro tool suite.


6

Schematic Capture (S-Edit)

for MEMS and ICry front end to theacement and router,ms. S-Edit and its

design may be builtnology and vendor.des without wiring.mbol can represent schematics can bexample, the MEMSematic symbols and

ixed analog/digitalgine that has been

ircuits, the T-Spicers.

s in T-Spice. In theuivalent circuits of table models fromlysis of the MEMS


S-Edit is a fully hierarchical schematic capture program applications. The program also serves as a schematic entT-Spice simulator, L-Edit/ SPR automatic standard cell pland layout vs. schematic (LVS) netlist comparison prograassociated libraries are technology independent; that is, the and tested before choosing a specific manufacturing techUser-defined global symbols convey connection among noS-Edit also supports global node naming so that a single syseveral distinct nodes in the design. Using S-Edit, MEMSdesigned to include signals in multiple energy domains. For eLibrary includes a set of examples of electro-mechanical schmodels.

Simulator (T-Spice Pro)

The T-Spice simulator provides full-chip analysis of analog, mand MEMS designs using an extremely fast simulation enproven in designs of over 300,000 devices. For large csimulator can be ten times faster than typical SPICE simulato

MEMS macromodels can be implemented in 3 different waysimplest form, MEMS devices may be modeled using eqstandard SPICE components. Another method is to createexperimental data or finite element or boundary element ana


7

devices. A third method is to use the external functional model interface. ThisEMS macromodels

ls, and the advancedeally suited to sub-, embedded withinits display each time

device or processr design. Definingria, and choosing

zation Wizard. The will need.

arameter values byhis type of statisticaliation will have on

and IC design. This. Primitives include, and tori. Drawing


last method allows quick and easy prototyping of custom Musing a C code interface.

The program includes standard SPICE models, BSIM3 modeMaher/Mead charge-controlled MOSFET model that is idmicron design. The W-Edit graphical waveform viewerT-Spice, displays analysis results, and automatically updates T-Spice simulates a circuit.

Powerful optimization algorithms automatically determineparameters that will optimize the performance of youparameters to be varied, setting up optimization criteoptimization algorithms is a cinch using the new OptimiWizard prompts you for the optimization criteria the program

Monte Carlo analysis generates “random” variations in pdrawing them probabilistically from a defined distribution. Tanalysis may be used to discover what effects process varsystem performance.

Layout Editor (L-Edit)

L-Edit is an interactive, graphical layout editor for MEMS full-custom editor is fast, easy-to-use, and fully hierarchicalboxes, polygons, circles, lines, wires, labels, arcs, splines


8

modes include 90°, 45°, and all-angle layout. Shortcuts are also available forved polygons” withdy. The new MEMSific design features.rmation, and the uselate release feature.

terface, 3D modelerS library).

ing, and extendingt/UPI is the macrothe C language, that recognized by their(for example, comb used geometry (fory stroke. L-Edit/UPIliminating the need

by the user, or from party vendors. Thend netlist extraction-party applications.


quickly laying out circles, tori, pie slices, splines, and “curtrue curved edges. Designs created in L-Edit are foundry reaPro Toolbar in Version 3.00 gives access to MEMS specThey gather the creation of splines, the display of vertex infoof Easy MEMS features like the polar array feature and the pIt also includes access to the process definition graphical inand viewer, MEMS specific DRC, and MEMSLib (the MEM

User-programmable Interface

L-Edit/UPI is a powerful tool for automating, customizL-Edit’s command and function set. The heart of L-Ediinterface. Macros are user-programmed routines, written in describe automated actions or sets of actions. Macros can be.dll file extension. Complex, parameterized cell generation drives, rotary motors, gears, etc.) as well as simple but oftenexample, bonding pads) can be implemented with a single keincludes a C language interpreter for reading macro code, efor a system compiler. The program reads .dll files producedMEMSCAP or Tanner libraries, or libraries supplied by thirdUPI provides user access to L-Edit’s Design Rule Checker amodules, and may be used to integrate L-Edit with other third


9

Layout vs. Schematic (LVS)

r another schematict. LVS is a check toircuit". Should any

used to identify and

esign-in-progress isels of your MEMSthe many foundryg your own custom bulk micromaching. You can easily

ming, cross-sectionetry can be exported

and prevent wiring. The MEMS blockks of MEMS and IC


LVS compares the SPICE netlist generated from S-Edit oeditor with the netlist generated from layout by L-Edit⁄Extracensure that both netlists represent the same multiphysics "cinconsistencies be found between the two lists, LVS can be resolve the ambiguity.

3D Modeler

Accurate three-dimensional (3D) visualization of your dcrucial to successful fabrication. You can create 3D moddevice layout geometry directly in L-Edit using one of fabrication process descriptions we support, or by specifyinprocess. The 3D Solid Modeler permits views of surface andsteps including deposit, etch, and mechanical polishingcustomize your view with features such as panning, zoomodeling, and other viewing controls. 3D solid model geomin a SAT format.

MEMS Block Place and Route

The block place and route feature will save you time mistakes. Routing may be done automatically or manuallyplace and route enables you to connect component level bloc


10

devices. Efficiency enhancing features include hierarchical block placement,line signal integrity

ulation models, andponents. MEMSLibhanical transducers,s example elements

design rules, layerrameter values, andles include MCNCT).

ration)

utomatic generationation. It captures the


block level floor planning, an EDIF netlist reader, and on-analysis.

MEMS Library (MEMSLib)

MEMSLib provides MEMS designers with schematics, simparameterized layout generators for a set of MEMS comincludes several types of suspension elements, electro-mecand test structures for extracting material properties. Varioucan be assembled to produce a single MEMS device.

Foundry Support

We’ve included examples of process setup information fordefinitions, extraction rules, process definitions, model pamacros from the most popular foundries. Processes examp(MUMPs), Sandia (M3M), ADI (iMEMS), and MOSIS (NIS

Embedded features in ANSYS

Reduced Order Modeling (Macro-Model Gene

Powered by ANSYS Multiphysics, MEMS Modeler offers aof behavioral models for fast and accurate system level simul


11

essential behavior for mechanical devices, and coupled electrostatics-mechanicsis and very accurate

ut)

format from FEM


MEMS components. Transient simulations, "what if" analyssystem simulation are then easily and quickly performed.

Automatic mask layout generation (3D to Layo

FEM-to-layout automatically generates mask layout in CIFmodels developed from a target process definition.

Introduction What’s New in Version 3.0

12

w and boost yourt you optimize yourshorten your design

efer to MEMS Pro

ar array feature, andies on page 147

rator on page 278

ling on page 334


What’s New in Version 3.0

MEMS Pro has been enhanced to simplify design floproductivity. We have incorporated technology that will ledesigns before you submit them to the foundry, and thereby cycle. For more information about

� The new MEMS-specific Graphical User Interface, rToolbar on page 97

� Easy MEMS including the plate release feature, the polthe vertex information viewer, refer to MEMS Pro Utilit

� Automatic spline generator, refer to Splines on page 126

� 3D to Layout generator, refer to ANSYS to Layout Gene

� Reduced Order Modeling, refer to Reduced Order Mode

Introduction Documentation Conventions

13

hical and stylistic

statements, specialare represented by a

sign. For example,

dialog box title by ayers—General both

output messages are

uld be made are


Documentation Conventions

This section contains information about the typograpconventions employed by this user guide.

In-line references to menu and simulation commands, devicecharacters, and examples of user input and program output bold font. For example: .print tran v(out).

Elements in hierarchical menu paths are separated by a >File > Open means the Open command in the File menu.

Tabs in dialog boxes are set off from the command name or dash. For example, Setup > Layers—General and Setup Larefer to the General tab of the Setup Layers dialog.

Freestanding quotations of input examples, file listings, and represented by a constant-width font—for example:

.ac DEC 5 1MEG 100MEG

Variables for which context-specific substitutions shorepresented by bold italics—for example, myfile.tdb.


14

Sequential steps in a tutorial are set off with a check-box dingbat (�) in the

en in boldface, withms left-click, right-e buttons.

…).


margin.

References to keyboard-mouse button combinations are givthe first letter capitalized—for example, Alt + Left. The terclick, and center-click all assume default mappings for mous

Text omitted for clarity or brevity is indicated by an ellipsis (

Special keys are represented by abbreviations, as follows.

Key Abbreviation

Shift Shift

Enter Enter

Control Ctrl

Alternate Alt

Backspace Back

Delete Del

Escape Esc

Insert Ins

Tab Tab


15

ir abbreviations aret the Ctrl and R keys

r abbreviations aret the Alt and E keysy after which the R

y a slash (/). Foressed together with

Key Abbreviation


When certain keys are to be pressed simultaneously, theadjoined by a plus sign (+). For example, Ctrl + R means thaare pressed at the same time.

When certain keys are to be pressed in sequence, theiseparated by a space ( ). For example, Alt + E R means thaare pressed at the same time and then released, immediatelkey is pressed.

Abbreviations for alternative key-presses are separated bexample, Shift + ↑ / ↓ means that the Shift key can be preither the up (↑) arrow key or the down (↓) arrow key.

Home Home

End End

Page Up PgUp

Page Down PgDn

Function Keys F1 F2 F3 …

Arrow Keys ↓ , ←, →, ↑

MEMScAP

16

17

19

40

42

45

47

56

73

86


2 MEMS Pro Tutorial

��Introduction

��Creating a Schematic

��Exporting a Netlist

��Simulating from a Netlist

��Probing a Waveform

��Viewing a Waveform

��Generating a Layout

��Viewing a 3D Model

��Drawing Tools

MEMS Pro Tutorial Introduction

17

design of a MEMSrial on page 370, thed Route Tutorial on targeted to specialtutorial includes asing L-Edit/Extract

ly familiar with the

ystem behavior, and-Spice, W-Edit, andly, and generate and

l subdirectory of thehat you follow the exit the tutorial att Simulating from aing a 3D Model on


Introduction

In the MEMS Pro tutorial, you will follow the complete resonator. The ANSYS Tutorial on page 176, the ROM TutoANSYS to layout Tutorial on page 316, the Block Place anpage 486, and the Optimization Tutorial on page 435 arefeatures of MEMS Pro. The advanced portion of this demonstration of layout extraction and netlist comparison uand LVS. Those chapters assume that the user is completematerial covered in this general tutorial.

In this tutorial, you will create a schematic design, analyze sgenerate device layout with the MEMS Pro tools S-Edit, TL-Edit. You will draw mask layout manually and automaticalview 3D models and cross-sections in L-Edit.

All files mentioned in this chapter are located in the tutoriamain MEMS Pro installation directory. We recommend ttutorial from the beginning; however, you may enter andseveral points during the design. Tutorial breakpoints occur aNetlist on page 42, Generating a Layout on page 56, Viewpage 73, and at Drawing Tools on page 86.

MEMS Pro Tutorial Introduction

18

The Design Example

User Guide, is anEMS transducer thatity of its resonantas chosen for yourmechanical system.library components


The design example, appearing throughout the MEMS Proelectrostatic lateral comb-drive resonator. A resonator is a Mcan be used as a sensor by exploiting the high sensitivfrequency to various physical parameters. The resonator wreview because it is an easily understood coupled electro-The resonator will be designed using the MEMSLib including comb-drives, a plate and folded springs.

MEMS Pro Tutorial Creating a Schematic

19

te designs using the

in the installation

w) contains the file

ion

contains often used


Creating a Schematic

In this section, you will learn how to navigate and manipulaS-Edit schematic editor.

Launching S-Edit

� Launch S-Edit by double-clicking the S-Edit icon directory.

The S-Edit user interface consists of five areas:

� The title bar (at the very top of the application windoname, module name, page name, and mode.

� The menu bar (at the top) contains commands

� The palette bar (on the left) contains tool icons

� The status bar (at the bottom) contains runtime informat

� The display area (in the center) contains the schematic

� The standard commands toolbar (below the menu bar)commands


20

Designs are contained in files, each of which consists of one or more modules.

odule showing the

ity of the module.

sist largely of two

objects, and labels;

d to their originals.mbol page.

ith Modules on page

components of anponents, and run an


Modules are viewed in either of two modes:

� Symbol Mode: a graphical representation of the mmodule’s connections.

� Schematic Mode: shows the composition and connectiv

The schematic may contain one or more pages which concomponent types:

� Primitives: geometrical objects, wires, ports, annotationall created with the S-Edit drawing tools.

� Instances: “copies” of other modules, dynamically linkeInstances are displayed in a design using the module’s sy

Note For more information on instancing modules, see Working w97 of the S-Edit User Guide and Reference.

Opening the File

As part of this section of the tutorial, you will place theelectrostatic lateral comb-drive resonator, connect those comAC analysis on your design.


21

The schematic symbols for these components have two pins for each connectingbscript _e), and thebscript _m). Theseequency sweep (ACt frequency and ther of the componentsterms of electricalical and mechanicalo energy domains.

eson.sdb file in the

ed at the top of there 1.

92, Working withage 116, Levels ofdit User Guide and


side: one carrying the electrical signal (denoted with the suother carrying the mechanical signal (denoted with the susymbols are assembled to form the resonator design and a franalysis) of the system is performed to discover the resonanmagnitude of displacement. The electro-mechanical behavioare modeled by expressing the mechanical behavior in analogs. These models can then be used to solve for the electrbehavior of the system as well as the coupling between the tw

The completed design is provided for your reference in the rtutorial directory.

� Select File > Open to open this file.

The current (visible) file, module, page, and mode are namtitle bar. The schematic view of the resonator appears in Figu

Note For more information, see Working with Files on page Modules on page 97, Working with Schematic Pages on pDesign on page 31 and Viewing Modes on page 33 of the S-EReference.


22

nator

new module.


Figure 1: Schematic view of the complete reso

Creating a New Module

To initiate your new resonator design, you must first create a


23

� Select Module > New to create a module.

OK.

name, and click the

y time by using theodule to open. Use

cting MyResonator

alog.

ins), will appear at


� In the Module Name edit field, enter MyResonator and click

Now would be a good time to save a copy of the file.

� Select File > Save As to invoke the Save As dialog.

� Select the tutorial directory, enter myreson.sdb as the fileSave button.

You can compare your work to the reference design at anModule > Open command and choosing Resonator as the mModule > Open again to return to your design, this time seleas the module to be opened.

Instantiating Components

Instantiating a Plate

� Select Module > Instance to invoke the Instance Module di

� Select plate4 as the Module to Instance and click OK.

Plate4, a four-sided plate with eight points of connection (pthe center of the schematic page.


24

� Home the view by selecting View > Home or by pressing the Home key. Thetents of the window.

in the middle of theion using the S-Edit

right mouse button mice, press the Alt

tiated plate.

tance. With the firste.

Horizontal.


view of the plate will be resized so that the plate fills the con

Instantiating Comb-drives

� Instantiate the comb module as you instantiated the plate.

The newly instantiated comb will appear on top of plate4 schematic window. You will have to move it to a new locatclick and drag feature.

Note Objects in S-Edit can be moved by selecting with the left orand dragging with the center mouse button. For two-buttonkey and left-click to drag objects.

� Place the comb-drive to the right side of the previously instan

� Place a second comb-drive into the design by copying the inscomb instance selected, select Edit > Copy, then Edit > Past

� Select the left comb and then flip it by choosing Edit > Flip >


25

� Move the comb-drives so that their connection pins, represented by circles, line on page 180 of the

ate

e.

Vertical.


up with the pins on the plate4 instance (Figure 2) (see PinsS-Edit User Guide and Reference).

Figure 2: Aligning the comb-drives to the pl

Instantiating Folded Springs

� Instantiate the fspring module and place it above the plate.

� Create a copy of the folded spring and place it below the plat

� Flip this second instance of fspring by selecting Edit > Flip >


26

Wiring Objects

Line tool. Lines arerical objects used to connect objects.

on page 175 of the

w for accuracy.

ow enough room to.

the plus and minusthe view.


Wires are drawn using the Wire tool .

First time, users of S-Edit may confuse the Wire tool with theused to graphically represent components; they are non-electannotate your schematic. Wires are electrical and are used to

Note For more information on wiring your schematic, see WiresS-Edit User Guide and Reference.

Zooming the View

Sensitive operations such as wiring nodes require a closer vie

� Select View > Zoom > Mouse.

� Drag a box around the plate with the left mouse button. Allsee the areas between the comb-drives and the folded springs

If you find you have zoomed in too much or too little, usekeys to Zoom in and out. The arrow keys can be used to pan


27

on page 134 of the

d other schematic

bottom_m pin. The4 instance.

tton while placing a

page 184, Pins onnd Reference.

t-clicking at the pinn open circle on the

ts (see Figure 3).


Note For more information on zooming, see Panning and ZoomingS-Edit User Guide and Reference.

You will now create connections between the plate ancomponents with wires.

� Select the Wire tool from the schematic toolbar.

� Initiate the wire placement by left-clicking on plate4 at the pin is shown as an open circle on the bottom left of the plate

Vertices can be placed on wires by clicking the left mouse buwire.

Note For more information on making connections, see Nodes onpage 180, and Wires on page 175 of the S-Edit User Guide a

� Move the cursor down and end the wire placement by righcalled free_m on the bottom fspring. This pin is shown as atop left of the bottom fspring instance.

� Repeat this process to wire the plate with the other componen


28

� Home the view by pressing the Home key.

nts

atic for simulation.


Figure 3: Schematic view of the wired eleme

Next, you will add stimuli and commands to set up this schem


29

Instantiating Voltage Sources

f the top fspring.

_e pins of the rightre on the top of the

make sure you have

matics. They allowout the need to drawer, ground, anchor,ting throughout the


� Instantiate the Source_v_ac module.

� Place it to the left of the left comb.

� Instantiate the Source_v_dc module.

� Place it to the right of the right comb.

� Copy the instance of Source_v_dc and place it to the right o

� Wire the positive terminals of the voltage sources to the fixcomb, left comb, and top fspring. The positive terminals avoltage source, in this example.

� Compare your design to the finished design in Figure 1 to placed the voltage sources correctly.

Placing Global Nodes

Global nodes simplify the drawing and maintenance of schenodes throughout a design to be connected to each other withor delete wires. Global nodes are especially useful for powclock, reset, and other system-wide nodes that require rouhierarchy of the design.


30

on page 191 of the

the design with thees that function asymbol, you connect design file that are global nodes.

hree of them will bees to set electricalhanical terminals to

Symbol tool on the


Note For more information on global nodes, see Global Nodes S-Edit User Guide and Reference.

To create a global node, you must place a global symbol onGlobal Symbol tool. Global symbols are special instancwireless connectors. When you attach a node to a global sthat node to all other nodes on every page and module in theattached to the same global symbol. Such nodes then become

You will add six global ground symbols to the schematic. Tconnected to the negative terminals of the voltage sourcgrounds. The other three will be connected to the fixed mecsignify mechanical anchors.

� To place a ground symbol onto the design, click the Globalleft side of the schematic window .


31

� Left-click on the schematic page. The Instance Module browse box will appear,nd) symbol will be

the previous step.

round symbols to a

voltage sources to a


with a list of the available global nodes and the ground (Gpreselected.

Figure 4: Instance Module browse box

� Click OK.

The ground symbol will be placed where you left-clicked in

� Copy and paste the ground symbol five times. Move two gplace on the schematic near each voltage source.

� Now wire the negative (lower) terminal of each of the three ground symbol.


32

� Of the remaining three ground symbols, one should be connected to the fix_m pinhe fix_m pins of the

n Figure 1.

the bottom fspringct them to the fix_e

gure 1 to make sure

s in the schematic to

cking it. Invoke thedit > Edit Object.


of the top spring, and the other two should be connected to ttwo comb-drives.

� Compare your wiring to the completed schematic presented i

� Pins fix_e (fixed electrical) and fix_m (fixed mechanical) ofshould be the only pins left unconnected at this point. Conneand fix_m pins, respectively, of the top fspring.

� Compare your design to the finished design presented in Fithe resonator has been wired correctly.

Editing Object Properties

Now, you will edit the properties of one of the voltage sourceset up the design for simulation.

� Select the voltage source next to the left comb by right-cliEdit Instance of Module Source_v_ac dialog by selecting E


33

c dialog

ding edit fields.

f 0 volts. Do this by0 in the V field.

value of 50 Volts.


Figure 5: Edit Instance of Module Source_v_a

� Enter 1 for mag, 0 for phase, and 0 for Vdc in the correspon

� Click OK.

� Give the voltage source for the right comb-drive a DC value ochoosing Edit > Edit Object with this source selected. Enter

� Similarly, give the voltage source for the folded springs a DC


34

Labeling Nodes

e is a point on the. Nodes are definedection of schematichin a single module, node-name appears different points of

e, but you may alsopful for annotating

.

, and rte. To label ae Label dialog box.ight_m and free_metween right_e and

ion button, click thee Label dialog box,of the label origin.


In S-Edit, connectivity is defined in terms of nodes. A nodschematic to which one or more pins or wires are connectedby their name, and the scope of a node is normally the collpages in a module. That is, if a node-name appears twice witboth names refer to the same point of connection. If the samewithin two different modules, the nodes refer to completelyconnection. S-Edit automatically assigns names to each nodmanually name nodes. User-assigned node labels are helS-Edit schematics and producing more readable netlists.

� Select the Node Label tool from the schematic toolbar

� Label the two wires connecting plate4 to the right comb, rtmnode, click it and enter the new node name in the Place NodThe rtm node label should be placed on the wire between rpins, and the rte node label should be placed on the wire bfree_e pins.

� To change the orientation of the node label, click the Selectnode label, and select Edit > Edit Object. From the Edit Nodclick one of the eight radio buttons representing the location


35

� Edit the node label orientations to look somewhat like the layout in Figure 6.

atch the names weou wish. This is an

beled nodes.

entering device andation options within

s. One instructs themulator to include as parameters for the


Figure 6: rtm and rte nodes

� You may rename the rest of the nodes in your diagram to mhave given ours in the Resonator module in reson.sdb, if yoptional step. S-Edit will automatically assign names to unla

Adding Simulation Commands

The Command tool provides an easy, convenient means of model statements, stimuli, simulation commands, and simulthe S-Edit environment.

We will use the Command tool to add two SPICE commandsimulator to run an AC simulation. The other instructs the sifile in the simulation netlist that contains fabrication procesresonator components.


36

� Select the Command tool from the schematic toolbar.

ialog (Figure 7).

ries on the left. Byf the dialog containsmand list may also

xample, clicking thed show the same listlected, the right sideed command.


� Click the work area to invoke the T-Spice Command Tool d

Figure 7: T-Spice Command Tool dialog

The T-Spice Command Tool dialog lists command categodefault, the Analysis category is selected and the right side obuttons listing the commands within that category. This combe viewed by clicking the + sign next to each category. For e+ sign next to Analysis category will expand this category anof commands as those on the buttons. When a command is seof the dialog changes to contain the parameters for the select


37

� Add an AC analysis command by clicking the AC button on the right side of the

nd Tool dialog willhe right side of thespecific to the AC


T-Spice Command Tool dialog.

The directory tree on the left side of the T-Spice Commaopen up to list the commands available under Analysis. TT-Spice Command Tool dialog will contain parameters Analysis command.


38

� Select decade as the Frequency sampling type, set Frequencies per decade to To to 100k. Click

process information


500, Frequency range From to 10k and Frequency rangeInsert Command.

Figure 8: Customizing the AC analysis

Once the AC analysis is set up, we need to bring fabrication into the netlist. The steps below guide you through this task.


39

� Click the work area to open the T-Spice Command Tool dialog. Click the + nextlog.

nd button. You cann.

ile


to the Files entry of the tree located on the left side of the dia

� Click Include file under Files.

� Set Include file to process.sp and click the Insert Commatype the filename in, or you can find it with the Browse butto

Figure 9: Selecting the technology process f

MEMS Pro Tutorial Exporting a Netlist

40

rforming one of the

Export.

s toolbar.

of the system using

S-Edit to export aice, a new, activendow will becomedit to analyze your

starting the tutorialopen the reson.sdb


Exporting a Netlist

An S-Edit schematic can be exported to a SPICE netlist by pefollowing operations:

� Using the Export Netlist dialog box accessed via File >

� Clicking the T-Spice button on the Standard Command

The netlist can be used to test the performance characteristicsT-Spice or other SPICE programs.

The next few instructions ask you to invoke T-Spice fromnetlist and to run a simulation. When you invoke T-Spapplication window will appear. The current S-Edit wiinactive, but do not close it. You will be returning to S-Esimulation results.

Tutorial Breakpoint

You will now use T-Spice to simulate a circuit. If you arehere, double click the S-Edit icon and select File > Open to file in the tutorial directory.

MEMS Pro Tutorial Exporting a Netlist

41

Note that we have provided a working module of the resonator for you to usencomplete, or if yousonator. Follow the resonator you have

ining Resonator to

in the Standardetlist open.

file name will beexported netlist file

e will appear in thee S-Edit open.

g a Netlist on page


through the rest of the tutorial if the resonator you created is iare entering the tutorial at this step. Our module is called Renext two steps to access Resonator. If you want to use thecreated, move ahead to the third step “Launch T-Spice.”

� Use the Module > Open command.

� Select the module Resonator, click OK. Click the page contaensure that it is active.

� Launch T-Spice. Click the T-Spice button locatedCommands toolbar. T-Spice will launch with the exported n

If you chose your resonator module, the exported netlistMyResonator.sp. If you chose our resonator module, the name will be Resonator.sp in the tutorial directory. This namtitle bar of the input file window of T-Spice. You should leav

Note For more information on exporting schematics, see Exportin228 of the S-Edit User Guide and Reference.

MEMS Pro Tutorial Simulating from a Netlist

42

, and the simulatione coupled electro-E.

nd replace of stringsnd tool for SPICEterface:

ion

runtime information


Simulating from a Netlist

Using T-Spice and W-Edit, SPICE netlists can be simulatedresults can be displayed graphically. In this example, thmechanical behavior of the resonator is simulated using SPIC

Simulating with T-Spice

T-Spice contains a full featured editor that includes search aand regular expressions, incremental find, and the Commasyntax assistance. There are four areas on the T-Spice user in

� The menu bar (at the top) contains menu commands

� The toolbar (beneath the menu bar) contains tool icons

� The status bar (at the bottom) contains runtime informat

� The work area (in the center) contains input file and windows


43

The T-Spice window (Figure 10) allows to view a SPICE file in which theand connectivity are

ation toolbar to run

C analysis that you


exported resonator components, their simulation parameters displayed.

Figure 10: T-Spice window

� Click the Run Simulation button located in the Simulthe simulation.

� Click Start Simulation in the Run Simulation dialog. The Aset up from S-Edit will now be performed.


44

The Simulation Output window will appear, displaying simulation statistics andes.

ce the simulation isdit Probe tool.


progress information, as well as any warning or error messag

During the AC analysis, simulation results are recorded. Oncomplete, you may examine the analysis results using the S-E

MEMS Pro Tutorial Probing a Waveform

45

ign and probe nodese. When a node islays the waveform-Edit can also beform Viewer or byis tutorial, we will

robing on page 243

ntains the resonator

ar. The cursor now

isplaying the results


Probing a Waveform

The waveform probe is used to browse through an S-Edit desto examine circuit simulation results for the specified nodprobed, S-Edit invokes W-Edit, which automatically dispcorresponding to the simulation results for that node. Wlaunched from T-Spice by selecting Window > Show Waveclicking the W-Edit button from the T-Spice toolbar. In thinvoke W-Edit from S-Edit using the probing feature.

Note For more information on waveform probing, see Waveform Pof the S-Edit User Guide and Reference.

� Click somewhere in the S-Edit schematic window that coschematic to re-activate S-Edit.

� Click the Probe tool located on the Schematic toolbhas the shape of the Probe tool.

� Left-click with the Probe tool on the rtm node.

During waveform probing, W-Edit is launched, graphically dof the T-Spice simulation.

MEMS Pro Tutorial Probing a Waveform

46

The W-Edit window should display a chart containing the magnitude and phaseis.


of the displacement of node rtm for the performed AC analys

MEMS Pro Tutorial Viewing a Waveform

47

ild windows, each

e button on the

trace into separateses W-Edit to show

tude information for(rtm) plotted versus


Viewing a Waveform

The W-Edit application window can contain many chcontaining one or more charts.

� Maximize the window containing your results by clicking thupper right corner of the window.

Chart Setups

W-Edit allows the expansion of charts with more than onecharts, each containing a single trace. Collapsing the chart cauall the visible traces in one chart.

� Select Chart > Expand Chart.

There should now be two charts (Figure 11), one with amplinode rtm, vm(rtm), and one showing the phase angle, vpfrequency.


48

� Now you should be able to view a peak in amplitude at around 13 kHz.

phase angle

implify a waveform


Figure 11: Charts representing the amplitude and the

Trace Manipulation

At times, you may find it necessary to hide traces in order to swindow.


49

� Select both charts by choosing Edit > Select All.

.

The checkmark will


� Choose Chart > Collapse Charts.

� With the (now single) chart selected, choose Chart > Traces

� In the Traces dialog, select vp(rtm).

� Click the box beneath the Show label to unselect vp(rtm). disappear.


50

The trace information will still be available, but the trace will not appear the next


time you view the chart.

Figure 12: Traces dialog

� Click Apply and then OK to return to the chart.


51

Notice that the displayed unit for vm(rtm) is Volts. The mechanical behavior ofal components; thertm) represents the dependent variable be meters.


this system is modeled with electrical analogs of mechanicmechanical displacement maps to voltage. Therefore, vm(displacement at the rtm node. Let’s change the label on theaxis from Volts to Displacement. The new Y-axis units will


52

� Select the top chart. Choose Chart > Options to invoke the Chart Options Y-axis Label field


dialog. Click the Axes tab. Enter Displacement(rtm) in theand m as the Y-axis Units.

Figure 13: Chart Options dialog

The chart title can also be customized, if you wish.


53

� In the General tab of the Chart Options dialog, set the Chart title to Lateral

orm

rs are vertical lines,ions on the trace forto the full height ornd the chart, their


Comb-drive Resonator and click OK.

Figure 14: Customizing the amplitude wave f

You may want to measure specific values on the chart. Cursohorizontal lines, or + points that can be used to identify locatmeasuring. The vertical and horizontal line cursors extend length of the chart. As the line cursors are moved arou


54

coordinates appear at the margins of the chart window. We demonstrate the use

be dragged with the difference in X axisart window. The Y

yed under the trace

peak.

e tip of the peak in.

area outlined by thee closer W-Edit willu have a clear view

hat your mouse is int.

ace peak.


of Vertical Bar cursors below.

� Select Chart > Cursors > Vertical Bars.

Two vertical cursors should appear on the chart. They can left mouse button. Their X axis locations (x1 and x2) and thelocations (dx) are displayed on the top left corner of the chaxis location of the moving or last moved cursor is displaname on the right side of the chart.

� Position the left bar so that it lines up with the tip of the trace

� Select View > Mouse Zoom. Click and drag a box around thvm(rtm). Make sure your drag box is within the chart window

W-Edit will change the magnification of the chart so that thebox fills an entire window. The smaller the box is drawn, thzoom into the chart. Continue magnifying your view until yoof the peak.

If you have zoomed-in too closely, you can retreat. Be sure tthe window you want to adjust, then select View > Zoom Ou

� Position the left cursor so that it lines up with the tip of the tr


55

The frequency value is shown as x1 and should be about 13 kHz. Thertm), and should be

r

y-value of thecurve at the xvalue of the moving or last movedcursor


displacement value can be found under the trace name, vm(about 5.1 µm.

Figure 15: Using the Vertical Bars curso

x1, x2, and dx

Cursors

MEMS Pro Tutorial Generating a Layout

56

sing File > Exit.

ponents, the plate,

MS Layout Palette.

in the installationthe work area.

dit user interface. Incut bar that contains

m discrete, usuallynd instantiated.

on window.


Generating a Layout

� You may now exit S-Edit, T-Spice and W-Edit, if you like, u

Now, you will learn how to create, from MEMS layout comcomb-drives and springs used in the resonator.

Tutorial Breakpoint

You will now generate the layout of a resonator using the ME

Launching L-Edit

� Launch L-Edit by double-clicking the L-Edit icon directory. A default file named Layout1 should be visible in

The L-Edit user interface is similar in appearance to the S-Eaddition to the menu, palette, and status bars, there is a shortbuttons for the most commonly-used menu commands.

As in S-Edit, L-Edit files are assembled hierarchically frofunctionally distinct, units called cells, which can be edited a

The current file and cell are named at the top of the applicati


57

Opening the File

r cell should appear reson.tdb file as a

containing Cell0 of

the Library Palette

sive elements, testllection contains allarts can be created

S Pro, but that task

of your installation

eared in the L-Edit


� Select File > Open to open the reson.tdb file. The Resonatoas the active cell. Use this view of the Resonator cell of thereference while you work through this section.

� Make the Layout1 file active by selecting the window Layout1 from the list of windows under the Window menu.

Creating Components

The mask layout for MEMS components can be created usingaccessed via the Library option of the MEMS Pro Toolbar.

The MEMS Library Palette contains active elements, paselements and resonator elements. The resonator element cothe parts you will need to create a resonator. All of these pmanually, using the drawing primitives available in MEMwould be tedious and time consuming.

The MEMS Library Palette should have been loaded as partsetup.

� Check that the MEMS Pro Toolbar has automatically appwindow.


58

If the MEMS Pro Toolbar is not automatically loaded, you will need to load ito Toolbar.

o invoke the Library

: Active Elements,ts. You will use the


manually. Refer to the introduction of Chapter 3 - MEMS Pr

Using the MEMS Library Palette

� Select Library > Library Palette in the MEMS Pro Toolbar tPalette dialog box.

The MEMS Library Palette dialog box contains four tabsPassive Elements, Test Elements, and Resonator ElemenResonator Elements in this tutorial.


59

� Select the Resonator Elements tab to make the resonator components available.

acro.

te.


Figure 16: MEMS Layout Palette

Generating the Plate

� Click the Plate button to invoke the plate generation m

A dialog box will appear requesting the parameters of the pla


60

� Enter 100 as the Width and click OK, accepting the default values for the other

rs. To see the entiresing the Home key.teInst) of a newly

uld set the Name of macro again in the

rive.


parameters.

Figure 17: Plate Parameters dialog

L-Edit ⁄UPI now creates a plate matching the input parameteplate, home the view by selecting View > Home or by presThe plate shown in the active window is an instance (Placreated cell named Plate.

Each cell name must be unique in a file. Therefore, you shoPlate Cell to something other than Plate when running thesame file.

Generating the Comb-drives

� Click the comb-drive button to create a lateral comb-d


61

� Change the Name of Instance to CombRight and click OK.

ssing the minus key

d it. The component

box


� Once a comb-drive appears on the screen, zoom out by preseveral times or by selecting View > Zoom Out.

Editing an Already Generated Component

You will now learn to edit a component once you have createyou will edit is the comb-drive you have just instantiated.

� Select the comb drive

� Select Library > Edit Component.

The Linear Comb Parameters dialog box appears.

Figure 18: Linear Comb Parameters dialog


62

� Set the Number of gaps to 21 and click OK.

ve


The modified comb drive appears in the L-Edit window.

Figure 19: Viewing the modified comb-dri


63

This editing possibility is quite useful. Indeed, if you instantiate a component andt modify one of its instantiated.

two objects slightly

cting it with a click,ing it to the desiredbject while holding

view to where the


then decide that it should be larger or longer, you can jusparameters and the newly edited component is automatically

Attaching Components

� Drag the comb-drive to the right side of the plate so that theoverlap.

Recall that an object can be dragged to new locations by seleand then holding down the center mouse button while movlocation on the page. For two-button mice, left-click on the odown the Alt key to accomplish the move.

� Zoom in with the plus key. Use the arrow keys to pan thecomb-drive overlaps the plate.


64

� Re-align the comb-drive so that it looks like the figure below.

late

, then Edit > Paste. top of your existing

ontal.

t > Edit Object and

ure 21).


Figure 20: Aligning the comb-drive to the p

� Copy the comb-drive by clicking it and choosing Edit > CopyThe new comb-drive will appear in the center of the page, ondrawing. Move it to the side of the other layout objects.

� Flip the second comb-drive by selecting Draw > Flip > Horiz

� Change the name of this copied instance by selecting Edientering CombLeft in the Instance Name field.

� Attach the second comb-drive to the left side of the plate (Fig


65

n

button from the


Figure 21: Viewing the uncomplete desig

Generating the Folded Springs

� Create a folded spring by clicking the Folded Spring Library Palette.

� Change the Name of Instance to SpringTop and click OK.


66

� Position it above the center of the plate so that it overlaps (see Figure 22).

al. Position the new

t > Edit Object and

button from thees and click OK.


Figure 22: Positioning the folded spring

� Copy and paste SpringTop. Then, select Edit > Flip > Verticfolded spring below the plate.

� Change the name of this copied instance by selecting Edientering SpringBottom in the Instance Name field.

Generating the Ground Plate

� Create a ground plate by clicking the Ground Plate Library Palette. Leave all the parameters at their default valu


67

� Home the view, then move the ground plate so that it covers all the moving parts

button. Leave allOK.

b-drive (Figure 23).

y drawing a box on

oly0 layer from the the Layers Palette.ll appear displayinge top of the Layers


of the resonator (refer to Figure 24).

Generating the Bonding Pads

� Create a bonding pad by clicking the Bonding Pad parameters for the bonding pad at their default values. Click

� Position the bonding pad slightly to the right of the right com

Now, you must connect the bonding pad to the comb-drive bPoly0 overlapping the two components.

� Choose the Box tool by clicking it and select the PLayers Palette by clicking on the first item in the first row ofAs your mouse is moved over the Poly0 button, a tool tip withe layer name. Poly0 will also appear in the list box at thPalette.


68

� Click once to set the upper left corner, hold the key down and drag to the

-drive.

g a box on Poly0 fashion as above.

ttom left side of the


opposite corner, and release.

Figure 23: Attaching the first bonding pad

� Copy the bonding pad and place it to the left of the left comb

� Flip the bonding pad by selecting Draw > Flip > Horizontal.

� Connect the bonding pad to the comb-drive by drawinoverlapping the comb-drive and the bonding pad in a similar

� Make a third copy of the bonding pad and place it to the boground plate.

1

2


69

� Connect the ground plate to the bonding pad by drawing a box on Poly0r fashion as above.

Cell0. Select Cell >

s the file name and

or


overlapping the bonding pad and the ground plate in a simila

� Change the name of the cell you have been working on fromRename. Enter MyResonator as the cell name.

� Save the file by choosing File > Save. Enter myreson.tdb aclick OK.

Figure 24: Final view of the lateral resonat


70

If you are interested in performing layout netlist extraction and layout vs.tion and use the

es, polygons, wires,erties can containuch as what color it.

ory called Extractlayout and its netlistfo dialog box or the

erties on page 1-66e.

as constructed. You

t.


schematic comparison, refer to Chapter 11 - Verificamyreson.tdb file.

Viewing Properties

Properties can be attached to any L-Edit object including boxcircles, ports, rulers, instances, cells, and files. Propsupplementary but necessary information about an object, swill appear when modeled, or what its constituent material is

MEMS Pro library components have a properties categProperties. This category provides a link between a design description. Extract Properties are accessed via the Cell InEdit Instance dialog box.

Note For more information on properties and extraction, see Propand Extracting Layout on page 3-48 of the L-Edit User Guid

Properties were applied to each part of the resonator as it wwill look at those properties now.

� Select the instance of the Plate and choose Edit > Edit Objec


71

� Click the Properties button. This instance should have no properties attached to⁄Extract pursues the

t button to view the

TRACT folder.

lder (Figure 25).


it. If the instance does not have Extract Properties, L-Edithierarchy and looks for extract properties on the parent cell.

� Select Cell from the Parent list box and click the View Parenproperties for the Plate cell.

� To view the extract properties, click the + sign next to the EX

Three properties should be displayed under the EXTRACT fo

Figure 25: Properties dialog box


72

Try selecting different properties to view their types and values on the right side

t the plate length is


of the display.

� Click the L property. The value that you entered to represenshown as the Value on the right side of the dialog.

To return to the layout, perform the following operations:

� Click Cancel to exit this Properties dialog box.

� Click Cancel to exit the main Properties dialog box.

� Click Cancel to exit the Edit Object(s) dialog box.

MEMS Pro Tutorial Viewing a 3D Model

73

from a layout and a

ginning the tutorialng a File to open theg from the previousfinition on page 74.

in the installationthe work area.


Viewing a 3D Model

The 3D Model Viewer automatically generates a 3D model process definition.

Tutorial Breakpoint

You will now create and view a solid model. If you are benow, follow the next section on Launching L-Edit and Openidesign file you have been provided with. If you are continuinsection, you may use your own design and skip to Process De

Launching L-Edit and Opening a File

� Launch L-Edit by double-clicking the L-Edit icon directory. A default file named Layout1 should be visible in

� Close the Layout1 file by selecting File > Close.


74

� Using the File > Open command, open the reson.tdb file (Figure 26) .

fabrication processready be saved with


Figure 26: Layout view of the resonator

Process Definition

Importing the Process Definition

In addition to layout or mask data, the 3D Modeler needs thedescription to generate 3D models. This information may althe layout, if not, it must be imported into the design file.


75

The following setup procedure loads the process information into the design file.ith the design file; it

Pro Palette. In the

pen button.

finition on page 352


Once imported, the process definition information is saved wneed not be re-imported when the file is re-opened.

� Choose 3D Tools > Edit Process Definition in the MEMSProcess Definition dialog, click the Import button.

� In the Open dialog box, select mumps_i.pdt and click the O

Note For more information on process definitions, see Process Deof the MEMS Pro User Guide.


76

Information describing the MCNC MUMPs process is imported into the dialogs used to build a 3D

on for the processcess steps. Beneath


box. This information, in conjunction with the open layout, imodel.

Figure 27: Process Definition dialog box

The top of the dialog box contains identifying informatidefinition. The left side of the dialog contains a list of the pro


77

it and to its side are the controls for adding, deleting, moving, enabling, andf the dialog contains

Editing the Processhe MEMS Pro User

ocess definition. Itlysilicon layer. (Asaving computationthe linear resonatorning of the seconde composed of the and the metal layer,ete.

tabase, click OK to


displaying 3D models for intermediate steps. The right side othe parameters of the selected step in the process steps list.

Note For more information on editing process definitions, see Definition on page 149 and Process Steps on page 357 of tGuide.

Mumps_i.pdt is an abridged version of the MUMPS princludes the steps up to the patterning of the second posimplified process is used for the tutorial in the interest of time.) You do not lose any important information because structure is defined by the process steps up to the patterpolysilicon layer. Note though, that the bonding pads arstacking of the first polysilicon layer, third polysilicon layer,so the 3D representation of the bonding pads will be incompl

� To attach the MUMPs process information to the design daclose the Process Definition dialog.


78

3D Model View

w to make it active.

te.

ill appear. In a fewindow. When a 3D

the 3D Model View

View toolbar or the

w it from any angle.


Generating the 3D Model

� Click somewhere in the title bar of the resonator layout windo

� Choose 3D Tools > View 3D Model in the MEMS Pro Palet

The 3D model generation will begin and a progress dialog wminutes, the 3D model will appear in a new, active, L-Edit wModel View window is active, the menu bar changes and toolbar buttons become enabled.

Manipulating the 3D Model View

To manipulate the 3D model view, use either the 3D Modelmenu options under the View menu.

Figure 28: 3D Model View Toolbar

The Orbit View allows you to rotate the model in order to vie


79

� Select View > Orbit or click the Orbit toolbar button.

.

the area of interest.

toolbar button.

box and release the

to Orbit, Pan, and

rbit.

Zoom in and out.

e view.


� Click and drag over the 3D model window to orbit the model

The 3D model view may be translated by panning the view.

� Select View > Pan or click the Pan toolbar button.

� Click and drag over the 3D model window to pan.

You may examine the details of the model by zooming in to

� Select View > Zoom > Box or click the Window Zoom

� Click and drag the pointer to the opposite corner of the zoommouse button.

You may also use the Ctrl key and the three mouse buttonsZoom:

� Ctrl+Left click and drag over the 3D model window to O

� Ctrl+Right click and drag over the 3D model window to

� Ctrl+Center click and drag over the 3D model to Pan th


80

he solid model, seeuide.

ultaneously.

e it active.

l twice to create two


Note For more information on changing your point of view of tAccessing 3D Models on page 110 of the MEMS Pro User G

Multiple Views

Multiple views of the generated 3D model may be viewed sim

� Click somewhere in the title bar of the layout window to mak

� In the MEMS Pro Palette, select 3D Tools > View 3D Modemore views of the 3D model.


81

� Select Window > Tile to tile the windows. All open windows will be resized soodel view may be

eration steps


that they fit without overlapping (Figure 29). Each 3D mmanipulated independently.

Figure 29: Tiling the windows displaying the 3D gen


82

Viewing the 3D Model

be viewed again. Inon into the Tanner

active; close all 3Dight corner of each

e and the 3D model

oss-section tool.

e it active.

te to create another

del Cross-Section


Once generated, 3D models do not need to be regenerated toaddition, 3D models are saved with the design informatiDatabase .tdb file.

� Keep the layout window with the original design open and model windows by clicking the button in the upper rwindow.

� Select 3D Tools > View 3D Model in the MEMS Pro Palettwill reopen without generating.

3D Cross-section

Cross-sections may be taken from the 3D model using the Cr

� Click somewhere in the title bar of the layout window to mak

� Select 3D Tools > View 3D Model in the MEMS Pro Paletview of the 3D model.

� Click the Cross-section tool . The Generate 3D Modialog will appear (Figure 30).


83

dialog

tion view.

line representing thel. The cross-section

ows at once.


Figure 30: Generate 3D Model Cross Section

� Click OK. A new L-Edit window will appear with a cross-sec

The 3D Model View window will snap to the top view and a cross-section cut plane will be displayed on top of the modeplane is always normal to the surface of the wafer.

� Select Window > Tile so that you can view all the open wind


84

� Manipulate the cross-section plane line to the desired location by using the leftsection window will

ss-section steps

clicking a toolbarxt desired function.


mouse button to move the end points of the line. The cross-be updated with each manipulation of the line.

Figure 31: Tiling the windows displaying the various cro

� To exit the cross-section mode, select a different mode bybutton or by selecting the menu item corresponding to the ne


85

oss-section on page


Note For more information on cross-sections, see Viewing a Cr141.

MEMS Pro Tutorial Drawing Tools

86

tools available withwires and polygons,se some of these to

s.

on.


Drawing Tools

In this section of the tutorial, we will explore the drawing MEMS Pro. MEMS Pro supports objects such as all-angle arcs, tori, circles, splines, and curved polygons. We will udraw a rotary side-drive motor.

A special tutorial to use splines is given in Chapter 4 - Spline

Tutorial Breakpoint

� If you are starting the tutorial here, double-click the L-Edit ic

Ten object types are supported:

� Box

� Polygon

� Wire

� Circle

� Arc

� Torus

� Splines


87

� Port

Editing Objects on

plete (right) layoutsorial will guide you

Area to be completed


� Ruler

� Instance

Note For more information on drawing objects, see Drawing andpage 1-240 of the L-Edit User Guide.

� From L-Edit, open the motor.tdb file.

In the visible cell, Demo, there are complete (left) and incomof a rotary side drive electrostatic motor. This part of the tutin finishing the incomplete design.

completemotorexample


88

Drawing a Wire

stator on the poly1

several vertices.

visible as in Figure drag to the opposite


On the incomplete motor design, a pad is not attached to alayer. A wire must be drawn to connect this pad to its stator.

The anchor point is the first vertex of a wire. Wires can have

� Select View > Zoom > Mouse so that the pad and torus are32. Left-click at one box corner, hold the button down as youbox corner, and release.

Figure 32: Wiring the pad to the stator

start

end


89

� Select All Angle Wire by clicking the button in the Drawing toolbar.

angement of squarentiated by color andhe layer beneath thed by clicking the

ccessive clicks willd to end the wire.

and the pad or thesen is completed, that of the wire.

ator units and click

sets the center. Theird click decides the


� Choose the poly1 layer from the Layer Palette.

The mask layers are displayed in the Layer Palette as an arricons that represent the available layers. The icons are differepattern. As you move the cursor over an icon, the name of tcursor appears in the Status bar. A layer is selectecorresponding icon.

� Click the stator opposite the pad to start drawing a wire. Suproduce intermediate points of connection. Right-click the pa

It is important that the wire touch the poly1 layer of the toruselements will not be connected. When the drawing operationew object remains selected. You will now change the width

� Select Edit > Edit Object. Change the Wire Width to 15 locOK.

Drawing a Torus

When drawing a torus, the first click of the left mouse buttonsecond click determines the inner radius of the torus. The thouter radius and the sweep angle.


90

� Select the Torus tool from the Drawing toolbar.

ing the torus. Left-right-clicking at the


� Left-click the center of the incomplete motor to begin drawclick at the inner radius point, then complete the torus by outer radius point (Figure 33).

Figure 33: Creating a torus

outer radius point

inner radius point

center


91

Drawing a Curved Polygon

be drawn first. Theecting a given edgeurve with the center

e you drew with the

a way that the left-

oolbar.


To create a curved polygon, a straight edged polygon muststraight edges can then be converted to curved edges by selwith a Ctrl+Right click and then dragging out the desired cmouse button.

You will used a curved polygon to draw a stator like the ontorus tool.

� Select the Window Zoom tool to arrange the view in such most stator is visible (Figure 34).

� Select the All Angle Polygon tool from the Drawing t


92

� Left-click the first numbered vertex to begin drawing the polygon. Left-click they right-clicking the

ted, the edge will be


second and the third vertices, then complete the polygon bfourth numbered vertex (Figure 34).

Figure 34: Creating the all angle polygon

� Select the rightmost edge with a Ctrl+Right click. Once selechighlighted.


93

� Press the Ctrl key, hold and drag the center mouse button (Alt+Left hold for tworved edge as shown

lygon

e selected, the edge


button mice) to the left to convert the straight edge into a cubelow. Release the mouse button to complete this action.

Figure 35: Curving the rightmost edge of the po

� Similarly, select the left edge with a Ctrl+Right click. Oncwill be highlighted.


94

� Press the Ctrl key, hold and drag the center mouse button (Alt+Left hold for twourved edge. Release

lygon

rves on page 1-254


button mice) to the left to convert the straight edge into a cthe mouse button to complete this action (Figure 36). .

Figure 36: Curving the leftmost edge of the po

Note For more information on drawing and editing curves, see Cuof the L-Edit User Guide.


95

Drawing a Circle

that it matches thee; drag the mouse to

es positioned at 90ºst be placed on the

ove it to the proper

om the anchor pointway, and release.

lick for two buttone dimple should be


� Select the Circle tool and select the poly0 layer.

� Place a circle at the center of the incomplete design so completed design. Left-click to anchor the center of the circlset the radius of the circle and release.

Drawing a Box

Close inspection of the rotor reveals there are three dimplintervals near the center of the rotor. A fourth dimple mudimple layer to complete the pattern.

� Choose the Box tool and select the dimple layer.

The box may be constructed anywhere on the layer. We will mlocation after it is complete.

� Left-click to anchor the first corner of the box, drag away frto determine the opposite corner of the box three grid units a

� Left-click the newly drawn dimple box to select it.

� Move the dimple into place with a center-click (Alt+Left cmice) and hold, drag and release at the desired location. Th


96

placed to the right side of the rotor so that it is approximately 90º from the next


nearest dimple (Figure 37).

Figure 37: Creating a dimple

This concludes the basic tutorial of MEMS Pro.

new dimple

MEMScAP

97

98

103

109

114

118

121

124


3 MEMS Pro Toolbar

��Introduction

��Library Menu

��3D Tools Menu

��Easy MEMS Menu

��Splines

��Tools

��Help

MEMS Pro Toolbar Introduction

98

portunity to accessformer options that

it menu bar (Libraryated features (Platelitate the designer’s

e opening of the L- Pro features to the

rform the following


Introduction

The new MEMS Pro Toolbar (see Figure 38) offers the oprelevant MEMS-specific features. These features are either were previously accessible from the Tools menu of the L-EdPalette, 3D Tools menu and Polar Array option) or new creRelease option, Splines menu, and Tools menu) that facitasks.

The MEMS Pro Toolbar can be launched automatically at thEdit session. Its purpose is to better expose all the MEMSuser.

Figure 38: MEMS Pro Toolbar

If the MEMS Pro Toolbar is not automatically loaded, peoperations:


99

� Select Tools > Macro to invoke the Macro dialog.

EMSPhysical.dll in


� Click the Add button to bring up the Open dialog. Select Mthe memslibs directory.

The MEMS Pro Toolbar appears.

� Click the Close button to exit the Macro dialog.

� Then, select Setup > Application.

The Setup Application dialog box appears.


100
Figure 39: Setup Application dialog box


101

� Browse to the ledit.ini file located under Program Files / Memscap / MEMS Pro


v3.00 and click OK.

� Click Tools > Macro.

The Macro dialog box appears.

Figure 40: Macro dialog box


102

� Select the MEMSPhysical.dll in the bottom area and click the Load at startup


check box.

� Click Close.

Your MEMS Pro Toolbar will now appear automatically.

MEMS Pro Toolbar Library Menu

103

an be assembled toive, passive and test

Library > Library


Library Menu

The Library menu offers two possibilities:

� Accessing the Library Palette

� Editing components created using the Library Palette

Library Palette

The Library Palette contains a variety of components that ccreate a full MEMS device. It allows the instantiation of actelements but also resonator elements.

� Access the Library Palette (see Figure 41) by selectingPalette in the MEMS Pro Toolbar.


104

ry Palette, refer to


Figure 41: Library Palette

Note For more information on discovering and using the LibraChapter 15 - MEMSLib Reference.


105

Edit Component

you have previously

re 42).


You have now the possibility to modify the components that created using the Library Palette.

To edit components, perform the following steps:

� Select the component you want to edit.

In this example, consider a harmonic side drive (refer to Figu


106

component appears


Figure 42: Default harmonic side drive

� Select Library > Edit Component.

A dialog box displaying the parameters of the selected (Figure 43).


107

side drive


Figure 43: Parameters dialog box of the harmonic

� Modify the parameters values and click OK.


108

The component has been edited (Figure 44).


Figure 44: Edited harmonic side drive

MEMS Pro Toolbar 3D Tools Menu

109

D model generation

Definition.

to browse for theus steps of the 3D


3D Tools Menu

The 3D Tools menu gathers all the options related to the 3and viewing. You can perform the following operations:

� Edit a process definition

� View a 3D model

� Delete a 3D model

� Export a 3D model

Editing a Process Definition

� To edit a process definition, select 3D Tools > Edit Process

The Process Definition dialog box appears allowing youdesired process definition file (.pdt) and to edit the variogeneration (see Figure 45).


110
Figure 45: Process Definition dialog box


111

Editing the Process

as to be previouslyesent document, for

layed in the L-Edit

olbar.

ating which step is model appears in a

ng 3D Models from


Note For more information on editing process definitions, refer toDefinition in Chapter 17 - Process Definition.

Viewing a 3D Model

To view the 3D model of a layout, a process definition hdetermined (refer to Editing a Process Definition in the prmore information)

To view the 3D model of a layout, the layout has to be dispmain window.

� Then, select 3D Tools > View 3D Model in the MEMS Pro To

A progress bar called Generating 3D Model appears indiccurrently performed. At the end of the 3D generation, the 3Dnew window.

Note For more information on viewing a 3D model, refer to ViewiLayout of Chapter 6 - 3D Modeler.


112

Deleting a 3D Model

l in the MEMS Pro

can choose to delete

eting 3D Models of


To delete a 3D model, select 3D Tools > Delete 3D ModeToolbar.

The Delete 3D Models dialog box appears (Figure 46). You one cell, one file or all open files.

Figure 46: Delete 3D Models dialog box

Note For more information on deleting 3D models, refer to DelChapter 6 - 3D Modeler.


113

Exporting a 3D Model

l in the MEMS Pro

port your 3D model

rting 3D Models of


To export a 3D model, select 3D Tools > Export 3D ModeToolbar.

The Export 3D Model dialog appears (Figure 47). You can exinto a .sat or a .anf file.

Figure 47: Export 3D Model dialog

Note For more information on exporting 3D models, refer to ExpoChapter 6 - 3D Modeler.

MEMS Pro Toolbar Easy MEMS Menu

114

you to perform the

oles.

lbar.

ne the width, lengthermine whether youhe width and length


Easy MEMS Menu

The Easy MEMS menu offers two useful features that allowfollowing operations:

� Creating holes in a plate

� Customizing the duplication of elements

Creating holes in a plate

To create holes in a plate, perform the following operations:

� On your layout, select the plate in which you want to create h

� Choose Easy MEMS > Plate Release in the MEMS Pro Too

The Plate Release dialog appears (Figure 48). You can defiand spacing of the holes that will be created. You can also detwant to create dimples or not. And, you can define not only tof the dimples but also the ratio of dimples per hole.


115
Figure 48: Plate Release dialog


116

enerating Holes in a

reference point and

nt to duplicate andr.

re depends on three


Note For more information on creating holes in a plate, refer to GPlate in Chapter 5 - MEMS Pro Utilities.

Copying objects

The Polar Array feature allows you to copy objects around ato keep a regular angle between each object.

� To use the Polar Array feature, select the element you wachoose Easy MEMS > Polar Array in the MEMS Pro Toolba

The Polar Array dialog box appears (Figure 49). This featuparameters:

� The number of copies you want to create

� The angle for the copies

� The center of the array


117

refer to Generating


Figure 49: Polar Array dialog

Note For more information on using the Polar Array function, Polar Arrays in Chapter 5 - MEMS Pro Utilities.

MEMS Pro Toolbar Splines

118

.0. It consists of the

refer to Chapter 4 -

like to create spline-

ve the possibility to


Splines

The Splines feature is a new feature of MEMS Pro Version 3possibility of creating and editing splines.

Note For more information on the creation and edition of splines,Splines.

Creating Splines

To create splines, perform the following operations:

� Select the reference wire or the object for which you would edge.

� Select Splines > Create in the MEMS Pro Toolbar.

The Create Splines dialog box appears (Figure 50). You haextrapolate or approximate the reference object.


119
Figure 50: Create Spline dialog box


120

Editing Splines

you can modify the

t is to re-create the


To edit a spline, perform the following steps:

� Select the spline you want to edit.

� Select Splines > Edit in the MEMS Pro Toolbar.

The same Create Spline dialog box (see Figure 50), in whichoperation of creating a spline, appears.

Note This option also allows you to undo the spline creation, thaoriginal reference wire.

MEMS Pro Toolbar Tools

121

vertex coordinates,ew the coordinates,

to vertices, refer toS Pro Utilities.

allows you to view

following steps:

Toolbar.

are displayed in the


Tools

The Tools menu gives you access to options related to theangles and information. You now have the possibility to viangles and information related to a vertex.

Note For more information on how to use these features related Viewing Vertex Coordinates and Angles in Chapter 5 - MEM

Viewing Vertex Coordinates

The View Vertex Coordinates feature of MEMS Pro V3.0the coordinates of selected elements.

To view the coordinates of a particular element, perform the

� Select the desired element.

� Choose Tools > View Vertex Coordinates in the MEMS Pro

The vertex number and coordinates of the selected element layout window.


122

Viewing Vertex Angles

le values of selected

orm the following

Toolbar.

ent are displayed in

the coordinates, theent.

want to view the

oolbar.

ent are displayed.


The View Vertex Angles feature allows you to view the angelements.

To view the angle values of a particular element, perfoperations:

� Select the desired element.

� Choose Tools > View Vertex Coordinates in the MEMS Pro

The vertex number and the angle values of the selected elemthe layout window.

Viewing Vertex Information

The View Vertex Information feature allows you to view angle values and the number of the vertices of a selected elem

� To access that feature, select the element for which youinformation.

� Select Tools > View Vertex Information in the MEMS Pro T

The information concerning the vertices of the selected elem


123

Clearing Vertex Information

d element, you cantex Information.


Once you have viewed the vertex information of a selecteremove them from the design by selecting Tools > Clear Ver

MEMS Pro Toolbar Help

124

ide and to various

ro User Guide.

select Help > About


Help

The Help menu gives access to the MEMS Pro User Guinformation concerning MEMS Pro.

MEMS Pro User Guide

To access the MEMS Pro User Guide, select Help > MEMS P

About MEMS Pro

To access information on MEMS Pro and its current version, MEMS Pro.

The About MEMS Pro dialog box appears (Figure 51).

MEMS Pro Toolbar Help

125
Figure 51: About MEMS Pro dialog box

MEMScAP

126

127

129

132

146


4 Splines

��Introduction

��Create Spline Dialog Box

��Creating Splines

��Editing Splines

Splines Introduction

127

ents, section on X-are.html) has been

an adaptation basedread the web site toauty of the X-splinene behavior at each the extreme of an the "angled" curve

. To each vertex isterval.

t belong to the set),ay.

e angles. This shapeed elements.

t belong to the set),


Introduction

A spline generator (refer to the paper on Software FragmSplines, web page link http://www.gk.dtu.dk/home/jab/softwadded to MEMS Pro to aid in fluidics device layout. This is on the lack of a spline primitive in MEMS L-Edit. Please understand how the generator has been implemented. The beis that the user will have an intuitive way of dialing in splicontrol point and it can be shown to go smoothly betweeninterpolated curve to an approximated curve, passing through(the original wire).

Understanding Splines

A spline is defined by a set of vertices and shape factorsassigned a shape factor. The shape factors lie in the [1, -1] in

� If the shape factor lies between [-1, 0[ (where 0 does nothe curve is interpolated in a geometrically continuous w

� If the shape factor is 0, the vertices of the curve becomfactor allows one to recreate angled segments from curv

� If the shape factor lies between ]0, 1] (where 0 does nothe created curve approximates the vertex.

Splines Introduction

128

The Splines option allows you to perform one of the following operations:


� Creating a spline

� Editing a spline

Splines Create Spline Dialog Box

129

reate Spline dialog

lines > Edit in the


Create Spline Dialog Box

The only dialog box used to create and edit splines is the Cbox (Figure 52).

You access it by selecting either Splines > Create or SpMEMS Pro Toolbar.



130

On the left side of the dialog box, the coordinates (in locator units) and the shapeint) of the reference

their numbers. Youls > View Vertex

ions on this viewing Chapter 5 - MEMS

ntrol point can be Whether using thea control point to be

ed in the following

egment (the

d object (the only


factor are displayed for each vertex (also called a control powire.

Note The vertices are displayed in a specific order depending on can view the numbers of the vertices by choosing TooCoordinates in the MEMS Pro Toolbar. For more informatfeature, refer to Viewing Vertex Coordinates and Angles inPro Utilities.

On the right side, the behavior of the curve at each comanipulated either using the slide bar or the radio buttons.slide bar or the rado buttons, one can change the behavior at an approximate, angled or interpolated spline.

The parameters of the Create Spline dialog box are describtable:

Parameter Default Value Description

Interpolate -1.00 Allows interpolation of a reference svalue ranges from -1 to 0)

Angle 0.00 Allows creation of angles on a curveavailable value is 0)


131

overlay the originalhe spline using theuttons of the Spline

f a reference 1)



You also have the possibility to decide whether you want toobject with the spline or replace the original object by tOverlay original object and Replace original object radio bCurve area.

Note The shape factor values range from [-1, +1].

Approximate 1.00 Allows approximation of the angle osegment (the value ranges from 0 to

Splines Creating Splines

132

g operations:

Pro.

ire") (Figure 53) by


Creating Splines

Creating Splines from Angled Wires

To create a spline from an angled wire, perform the followin

� Choose the Selection icon of the Drawing toolbar of MEMS

� Select the angled wire (often referred to as the "reference wclicking on it.


133
Figure 53: Selecting the reference wire

� Choose Splines > Create in the MEMS Pro Palette.


134

The Create Spline dialog box appears (Figure 54).

tex of the selectedike an interpolation

dialog box.



Interpolation

A shape factor between [-1, 0[ applied to the second verreference wire (Figure 53) will cause the shape to behave lspline.

� Select the second vertex on the left side of the Create Spline


135

� Select the Interpolate radio button in the Control Point Shape Factor box.

the new one or not.

55). It goes through


� Choose whether you want to replace the original object with

� Click OK.

The interpolated spline appears in the L-Edit window (Figureall the control points, even the second one.


136
Figure 55: Interpolation spline


137

Approximation

ertex results in anecond vertex of the

dialog box.

ape Factor box.

the new one or not.

ure 56). It does not


A shape factor between ]0,1] applied to the second vapproximation spline. The created curve approximates the sreference wire.

� Select the second vertex on the left side of the Create Spline

� Select the Approximate radio button in the Control Point Sh

� Choose whether you want to replace the original object with

� Click OK.

The approximated spline appears in the L-Edit window (Figgo through the second vertex.


138

e


Figure 56: Creating an approximated splin


139

Re-creating Angled Wires

ay be used to createreference wire from

ctor box.

gure 57).


A shape factor of 0 applied to the second vertex of a spline m(or re-create) an angled vertex. Thus, you can re-create the the approximated or interpolated curve.

Perform the following operations:

� Select the spline.

� Choose Splines > Create in the MEMS Pro Toolbar.

� Select the Angle radio button of the Control Point Shape Fa

� Click OK.

The angled wire is created (or re-created) from the spline (Fi


140
Figure 57: Angled wire


141

ce L-Edit does notg you to start over if

from polygons.

steps:


Warning The resultant curved wire is realized with a polygon sinimplement a spline primitive. This has the downside of forcinyou click OK and then change your mind.

Creating Splines from Polygons

A more impressive possibility is that splines can be generated

To view the advantages of this feature, perform the following

� Create a five vertex polygon (Figure 58).


142
Figure 58: Polygon


143

� Select the polygon.

approximates each

rs


� Select Splines > Create in the MEMS Pro Toolbar.

The Create Spline dialog box appears.

� Modify the shape factors of all the vertices so that the curvevertex (Figure 59).

Figure 59: Modifying the vertex shape facto

� Click OK.


144

The created rounded shape of the polygon appears (Figure 60).


Figure 60: Rounded shape of the polygon


145

You can choose to either interpolate or approximate the vertices of the polygon.oes through all the

the curved resulting.


In the case of an interpolation, the curved resulting shape gvertices of the polygons. In the case of an approximation, shape does not go through any vertex of the original polygon

Splines Editing Splines

146

ics device layout.

the same method as

s.

change the behaviorn angled wire) or to


Editing Splines

A spline editor has been added to MEMS Pro to help in fluid

To edit a spline, perform the following operations:

� Select the spline you want to modify.

� Choose Splines > Edit in the MEMS Pro Palette.

The Create Spline dialog box (Figure 52) appears. Follow the one used to create splines.

Note It is the same dialog as the one used for the creation of spline

Using the dialog box radio buttons and/or slide bar, you can of the existing spline to come back to the original shape (aapply the opposite shape factor.

MEMS Pro Utilities

147

148

149

150

154

157

164

168


5 MEMS Pro Utilities

��Introduction

��Running Macros in L-Edit

��Generating Polar Arrays

��Generating Holes in a Plate

��Viewing Vertex Coordinates and Angles

��Approximating All-angle Objects

��Generating Concentric Circles

MEMS Pro Utilities Introduction

148

e the MEMS layoutcros are located and


Introduction

The MEMS Library contains a host of macros that facilitatdesign process. In this chapter, we describe where these mahow to use them.

MEMS Pro Utilities Running Macros in L-Edit

149

ed automatically at Toolbar. You may-Edit, selecting the

load them manually

the Macro dialog.

ectory>\memslibs\

list and click Run.u.


Running Macros in L-Edit

The macros described in this chapter should have been loadstart-up and bound to the Tools > menu in the MEMS Proconfirm whether the macros have been loaded by starting LTools > menu and looking for them.

Loading the Macros

If the macros have not been loaded automatically, you may using the procedure below:

� Start L-Edit.

� Select Tools > Macro in the main L-Edit menu bar to access

� Click Add and load the macro file <install dirMEMSPhysical.dll.

� To run a macro, either select the macro from the MacrosAlternatively, you may access the macro from the Tools men

MEMS Pro Utilities Generating Polar Arrays

150

stances of a selected

in the MEMS Pro


Generating Polar Arrays

Description

The Polar Array function allows you to generate multiple incell and to place them in an arc.

The Polar Array function depends on three parameters:

� The center of the polar array

� The number of desired copies

� The total angle for the copies

Accessing the Function

� To access this function, select Easy MEMS > Polar ArrayPalette.


151

The Polar Array dialog box opens.


Figure 61: Polar Array dialog


152

Parameters

dialog box options

This number

units). the edit fields or ter by clicking in

displays a center

olar array will be

the Total Angle

ces of the device

the Total Angle


The following table provides a description of the Polar Array


Copies 1 Number of copies in the polar array.does not include the original.

Center of array X = 0, Y = 0 Center of the polar array (in locator You may enter the X and Y values inclick the Pick button to select the centhe layout window. Picking a centermark in the layout.

Total Angle 360 Total angle according to which the pperformed.You may choose between specifyingor the Gap Angle.

Gap Angle 180 Angle separating the various occurento copy.You may choose between specifyingor the Gap Angle.


153

ws you to select the layout ween the 2 points le displays the ie wedge



Pick Angle Clicking the Pick Angle button allothe angle by selecting two points in window. The angle is calculated betand the center point. Picking an angcenter and angle text marks with a psweeping out the angle.

MEMS Pro Utilities Generating Holes in a Plate

154

ensure the completeallow the etching ofg these holes can behe design; however,ate Release utilitytes by automatically use this tool to add

the poly1 or on the

is selected, an error

Palette.


Generating Holes in a Plate

The Plate Release feature is a new MEMS Pro feature. To release of wide plates, holes must be cut out of the plate to the sacrificial oxide layer placed underneath the plate. Placina very time-consuming task that adds no significant value to tit is a necessary step to ensure manufacturability. The Pldramatically shortens the process of adding these holes to plagenerating them according to your options settings. You candimples as well.

� To use the Plate Release function, select one shape (either onpoly2 layer).

Note You have to select either a poly1 or a poly2 layer. If no shapemessage appears.

� Then, select Easy MEMS > Plate Release in the MEMS Pro

The Plate Release dialog box appears.


155
Figure 62: Plate Release dialog box


156

The following table explains the parameters used in the Plate Release dialog box

s you to create


and their explanation.


Width 5 Width of the created holes

Length 5 Length of the created holes

Spacing 20 Space between the created holes

Extract Holes Extract the holes from the shape

Create Dimples The Create Dimples checkbox allowdimples in addition to the holes

MEMS Pro Utilities Viewing Vertex Coordinates and Angles

157

inates and angles of

of splines (refer to

, wire), perform the

oordinates.

Pro Palette.


Viewing Vertex Coordinates and Angles

Four new MEMS Pro features allow you to view the coordthe vertices of selected objects:

� View Vertex Coordinates

� View Vertex Angles

� View Vertex Information

� Clear Vertex Information

Note These features are quite useful for the creation and editionChapter 4 - Splines).

Viewing Vertex Coodinates

To view the vertex coordinates of a flat object (box, polygonfollowing operations:

� Select the object for which you want to view the vertex c

� Select Tools > View Vertex Coordinates in the MEMS


158

The number and coordinates (in locator units) of each vertex are displayed on theices. The size of thehe text is displayed


layout as port text on the ruler layer at the corresponding vertport text is the default port text size of the Ruler layer. Taccording to the following format:

vertex-number (X_coordinate, Y_coordinate)

Figure 63: Viewing vertex coordinates


159

This information remains visible until the Clear Vertex Information option is

wire), perform the

ngles.

oolbar.

yed on the layout as size of the port textplayed according to


issued.

Viewing Vertex Angles

To view the vertex angles of a flat object (box, polygon,following operations:

� Select the object for which you want to view the vertex a

� Select Tools > View Vertex Angles in the MEMS Pro T

The number and angle (in degrees) of each vertex are displaport text on the Ruler layer at the corresponding vertices. Theis the default port text size of the Ruler layer. The text is disthe following format:

vertex_number (vertex_angle)


160

formation option is


Figure 64: Viewing vertex angles

These information remain visible until the Clear Vertex Inissued.


161

Viewing Vertex Information

gle) of a flat object

angles.

ro Palette.

rees) of each vertext the corresponding

e of the Ruler layer.


To view the vertex information (number, coordinates, and an(box, polygon, wire), perform the following operations:

� Select the object for which you want to view the vertices

� Select Tools > View Vertex Information in the MEMS P

The number, coordinates (in locator units) and angle (in degare displayed on the layout as port text on the Ruler layer avertices. The size of the port text is the default port text sizThe text is displayed according to the following format:

vertex_number (X_coordinate, Y_coordinate) (vertex_angle)


162

formation option is


Figure 65: Viewing vertex information

These information remain visible until the Clear Vertex Inissued.


163

Clearing Vertex Information

object, perform the

nformation

Pro Palette.

ertex information ofmoving the vertex

x information of the

g

eared.


To remove the vertex information from the layout view of anfollowing operations:

� Select the object for which you want to clear the vertex i

� Select Tools > Clear Vertex Information on the MEMS

A dialog box prompting you to confirm the removal of the vthe selected object appears. Confirm your intention of reinformation of the selected object by clicking OK. The verteselected object disappears.

Figure 66: VertexInfo Confirmation dialo

Note If you click No, the vertex information of all the objects is cl

MEMS Pro Utilities Approximating All-angle Objects

164

or all-angle objectsthe design. The user cross-section view,xtract.

ds: Tools > MEMS> MEMS Extract.

anhattanize and 90° polygon s 90° and 45°

a Bostonize


Approximating All-angle Objects

Description

Approx.dll generates 90° and 45° approximated polygons fwithin a cell. The macro operates on the entire hierarchy of may choose to perform approximation, approximation andapproximation and design rule check, or approximation and e

Accessing the Macro

To access this macro, select any of the following commanApprox, Tools > MEMS CSV, Tools > MEMS DRC, or Tools


MEMS Approx Available approximation types are MBostonize. Manhattanize generatesapproximations. Bostonize generatepolygon approximations.

MEMS CSV Generates a cross-section view afterapproximation.


165

ostonize

e approximation.



MEMS DRC Initiates a design rule check after a Bapproximation.

MEMS Extract Extracts the layout after a Bostoniz


166

These commands must already be loaded, as described previously. Once any ofappear.

g


them are invoked, the All Angle Approximation dialog will

Figure 67: All Angle Approximation dialo


167

Parameters

only) and eter only applies

f internal units. chnology files it. Choosing 1/10 g is sufficient for ill adversely

rlay Approximated

n Geometry after approximated le objects. The ll-angle objects

third option is t deletes n is complete.


Parameters Default Value Description

ApproximationType

Choose between Manhattanize (90°Bostonize (90° and 45°). This paramto the MEMS Approx action.

Approximation Grid

Grid for approximation in number oThe default grid is 100 since most teuse 1000 internal units per locator unof the technology unit for this settinmost layouts. Finer grid selections waffect execution time.

Overlay There are three overlay options: OveApproximation Geometry, ReplaceGeometry, or Delete ApproximatioAction. The first option overlays theobjects on top of the existing all-angsecond option replaces the existing awith the approximated objects. The enabled only for DRC and Extract; iapproximated objects when the actio

MEMS Pro Utilities Generating Concentric Circles

168

ry:

layer in L-Edit. in an ASCII file.


Generating Concentric Circles

Location

The ccircle .dll library is located under the following directo

<install directory>\memslibs\ccircle.dll

Description

ccircle.dll generates concentric circles on the currentDimensions and the fill-type of the circles must be submitted


169

Accessing the Macro

log


To access this macro, select Tools > Concentric Circles.

Figure 68: Concentric Circle Generator dia

Parameters

Input File Format

Ccircle.inp is a sample input file.


Input File Input file name.


170

Syntax


.group <groupname> CCIRCS

<circlename> <radius> <filltype>

.

.

.

.endg <groupname>

Comment lines begin with the * character.

Example

.group AGroup CCIRCS

circ 10000 1

circ2 20000 0

circ3 35000 1

.endg AGroup


171

Parameters

ed for the e.

nits. The radii oft be of increasing

e indicates ft blank. If fill

then the circle is center and the ssigned a layer; e region will be ill be drawn, as

efinition rcles will be nd not filling the in the group. If zero, 0, then the

umference of the tween subsequent left blank.



groupname Any sequence of characters is allowgroupname except \\ and white spac

radius The radius of circle in Internal Ucircles found in a group block mussize. See the example above.

filltype The value of the first circle’s fill typwhether the circle is to be filled or letype of the first circle is the value 1,filled. That is, the space between thecircumference of the circle will be aoutside the circle’s circumference, thleft blank. Circles of greater radius wdefined in the following geometry dstatements. The fill types of these ciignored; alternating between filling aareas between the subsequent circlesthe first circle has a fill type of valuearea between the center and the circcircle will be left blank. The area becircles will be alternately filled and

MEMScAP

172

173

182

186

188

190

215

218

220

223

225

252


6 3D Modeler

��Introduction

��Accessing 3D Models

��Defining Colors for 3D Models

��Viewing 3D Models from Layout

��3D Model View User Interface

��Viewing a Cross-section

��Deleting 3D Models

��Exporting 3D Models

��Linking to ANSYS

��Editing the Process Definition

��3D Modeler Error Checks

3D Modeler Introduction

173

ication process on ated, the 3D model is model in separateated, translated and

fabrication process for generating input

S Pro 3D Modelerment and boundaryS, CFDRC, Coyote

l actuator, a rotarythe following pages.

MCNC MUMPs 3in arm has greaterpplied to the contactrature than the thick


Introduction

The 3D Modeler emulates the geometric effects of the fabrwafer from its mask layout and process definition. Once creadisplayed in an L-Edit window. Additional views of thewindows may also be created. These views can then be rotscaled.

The 3D Modeler may be used to catch errors in the layout andbefore submitting a design to a foundry. It is an essential toolfiles for 3D device analysis. 3D models created in the MEMmay be exported for direct use with third party finite eleelement analysis tools, including those available from ANSYSystems and Hewlett Packard.

Four examples of 3D models of MEMS devices (a thermamotor, an accelerometer, and a diaphragm) are presented on

MCNC MUMPs Thermal Actuator

The model below is of a thermal actuator designed for thelayer polysilicon surface micromachining process. The thresistance than the thick arm. Therefore, when a voltage is apads, the thin arm heats more rapidly and to a higher tempe


174

arm. The larger thermal expansion of the thin arm causes the tip of the actuator

(clockwise from the cross-section line, al.

rmal actuator


to deflect upward.

In Figure 1, four views of the thermal actuator are displayed upper left): a layout view, a top view of the 3D model with aview of the cross-section, and a rotated view of the 3D mode

Figure 69: Various views of the the


175

The .tdb file containing the example of this thermal actuator is <install

gned for the MCNCss. The motor has tending to align thete.


directory>\Examples\3DModel\mumps\heat\heat.tdb.

MCNC MUMPs Rotary Motor

The device modeled below is a rotary side drive motor desiMUMPs 3 layer polysilicon surface micromachining procetwelve stators and eight rotors. Tangential electrostatic forcesrotor poles with the excited stator poles cause the hub to rota


176

isplayed (clockwiseodel with a cross-

-up view of the 3D

tary motor


In Figure 2, four views of the rotary side drive motor are dfrom the upper left): a layout view, a top view of the 3D msection line, a view of the cross-section, and a rotated closemodel.

Figure 70: Various views of the ro


177

The .tdb file containing the rotary side drive motor example is <install

Devices’ iMEMSprocess that enablesnterface circuitry onnded between a pairthe plate create ae interface circuitryfficient electrostaticused to measure the


directory>\Examples\3DModel\mumps\RotMotor\motor.tdb.

Analog Devices iMEMS ADXL Accelerometer

Shown below is an accelerometer designed using Analogprocess. The iMEMS process is a surface-micromachining the fabrication of a polysilicon MEMS device and BiCMOS ia single chip. The accelerometer is a center plate that is suspeof springs. Comb fingers attached to the two sides of differential capacitor with the set of fixed outer fingers. Th(not shown) creates a feedback control system that applies suforce to balance the effects of acceleration. The feedback is acceleration.


178

clockwise from thew of a set of comb

accelerometer


In Figure 3, six views of the accelerometer are displayed (upper left): a layout view of the entire sensor, a layout vie

Figure 71: Various views of the ADXL


179

fingers, two views of the 3D model of the comb fingers, a 3D model of one of the

ometer is <install


springs, and a layout view of a spring.

The .tdb file containing the example of this accelerdirectory>\Examples\3DModel\adimems\ adimems.tdb.


180

Bulk Micromachined Diaphragm

r a pit created by ao sense pressure by

omachined diagram


Shown below is a diaphragm suspended by four beams ovebackside etch of a wafer. Such devices may be designed tplacing piezoresistors at the center of the diaphragm edges.

Figure 72: Various views of the bulk micr


181

In Figure 4, four views of the diaphragm are displayed (clockwise from the upper-section view, and a

achined diagram is


left): a layout view, a top view with cross-section line, a crossrotated view of the 3D model from beneath.

The .tdb file containing the example of the bulk microm<install directory>\Examples\3DModel\bulk\bulk.tdb.

3D Modeler Accessing 3D Models

182

manipulated withinon are required tometric effect of thes are parameterizedd not in processing

at but it cannot edit

they can be enteredr more information.

it .tdb file. The 3D.


Accessing 3D Models

3D Model Input

3D models of MEMS devices can be created, viewed, and L-Edit. Both L-Edit mask layout and a process definitiaccomplish this task. Process definitions summarize the geofabrication steps used to construct a device. These definitionin geometric terms (such as etch depths and etch angles), anterms (such as time of immersion or ambient temperature).

The 3D Modeler can view models stored in SAT (.sat) formthem.

Process definitions can be read from a text (.pdt) file or manually through the Edit Process Definition dialog. Foabout defining processes, see Process Definition on page 352

3D Modeler Output

The 3D model may be stored with mask layout in an L-Edmodel may also be exported as a SAT (sat) or ANF (.anf) file


183

The .sat file format is commonly used to exchange data between 3D modelstry format, and isoft HFSS, MaxwellFDRC and Coyote

iles can be directly the ANF file format

lid models in ANFANSYS connectionite the ANF file thatle installed in your

to use ANSYS haveat. If you choose to

Connection Productmodel from MEMSion Product for SAT ANSYS Connection


visualization and analysis tools. SAT is a standard induaccepted by many tools including AutoCAD, ANSYS, Ans3D, ABAQUS, and MSC/NASTRAN and those from CSystems.

The .anf file format is the ANSYS Neutral Format. ANF fimported into ANSYS. The details of converting SAT files todepend on your operating system.

Under Windows 95, MEMS Pro users must export their soformat if they wish to use ANSYS. MEMS Pro uses the module called The ANSYS Connection Product for SAT to wrdescribes your model. You must have this connection moduANSYS directory to accomplish this task.

Under Windows NT and UNIX, MEMS Pro users who wish the option of exporting their files in either ANF or SAT formexport to ANF format, MEMS Pro will invoke The ANSYS for SAT as you export the file. If you choose to export your Pro in SAT format, ANSYS will invoke The ANSYS Connectas it reads the SAT file. In either case, you must have TheProduct for SAT installed in your ANSYS directory.


184

Accessing the 3D Tools

u.

del, and Export 3Dn of the MEMS Pro

el options may alsove menu, which is


3D model tools may be accessed from the L-Edit layout men

The Edit Process Definition, View 3D Model, Delete 3D MoModel options may be accessed through the 3D Tools buttoToolbar.

Figure 73: Accessing the 3D Tools option

The View 3D Model, Delete 3D Model, and Export 3D Modbe accessed from the Design Navigator’s context-sensiti


185

reached by a right-click while in the Design Navigator window. The Design

xt-sensitive menu

erate on the selectedt is not possible to


Navigator, can be reached from the L-Edit View submenu.

Figure 74: Accessing the 3D Tools options using the conte

All commands available from the context-sensitive menu opcell. Since the process definition is a file-wide property, iaccess the Edit Process Definition dialog from this menu.

3D tools

3D Modeler Defining Colors for 3D Models

186

t colors for the solidrs are related to theecially assign colorsdo so.

is determined by

r setup. If the layoutr at the top of thendow, and left-click


Defining Colors for 3D Models

The setups for the standard fabrication processes have presebodies that result from fabrication process steps; these colomask layout color for the 3D models. It is not necessary to spfor the 3D models, but if you wish to define colors you may

The color corresponding to each of the layer materialsparameters set in L-Edit Setup Layers dialog.

The layout window must be active for you to access the colois active, the standard L-Edit layout menu bar will appeawindow. If this is not the case, move the cursor to a layout wito activate it.

3D Modeler Defining Colors for 3D Models

187

From the L-Edit layout menu, Setup > Layers will invoke the Setup Layerse Pass List to showted layer.

o customize the 3Dghts the color of thenate colors from theur 3D model. Solid are not.


dialog box. Click the Rendering tab. Select 3D Model in ththe current color settings for models generated from the selec

Figure 75: Setup Layers dialog

By default, the Use Custom Color check box is unchecked. Tmodel colors, check Use Custom Color. The interface highlifirst pass on the object Pass List, but you may choose alterColor sample bar. You can select colors for each layer in yocolors are available in MEMS Pro Version 3. Stipple patterns

3D Modeler Viewing 3D Models from Layout

188

Model in the MEMSately view it. If the when the View 3Dl is out-of-date. Forodeler Error Checks

Label and Process by the 3D Modeler.ers, see Editing the

ar

reported below they.


Viewing 3D Models from Layout

Model viewing is launched by selecting 3D Tools > View 3DPro Toolbar. If the model is up-to-date, you may immedimodel is new, or needs to be updated, the model is generatedModel command is selected. You will be warned if the modemore information on warnings and error messages, see 3D Mon page 252.

During model generation, a progress bar will display the Step number associated to each command as it is processedFor more information on Labels and Process Step numbProcess Definition on page 225.

Figure 76: Generating 3D Model progress b

An estimate of the time remaining to complete each step isprogress bar. To abort 3D model generation, press the Esc ke

3D Modeler Viewing 3D Models from Layout

189

The model is displayed in an L-Edit 3D Model View window with the icon in. The initial view of Z-scales and the X,

Model View User


the left corner followed by Cellname [3D Model] Filenamethe 3D model will be Isometric (that is, with equal X, Y, andY, and Z-axes drawn 120 degrees apart).

Note For more information on viewing the 3D models, see 3DInterface on page 190.

3D Modeler 3D Model View User Interface

190

ix important screenol Bar, the Palette,

del View

WorkWindows


3D Model View User Interface

Application Elements

The graphical user interface for the 3D Model View has scomponents: the Title Bar, the Menu Bar, the 3D Model Tothe Status Bar, and the Work Windows.

Figure 77: Graphical User Interface for the 3D Mo

Status Bar

Palette

3D Model Tool Bar

Title Bar

Menu Bar


191

The L-Edit Locator and Mouse Button Bar are inactive while in a 3D Model

ouse buttons offer

d by clicking the

tle bar indicates the and the file name:dow can be reduced

bar.


View.

While in 3D Model View mode, the left, center, and right mshortcuts to three view commands:

� Ctrl+Left activates the Orbit View

� Ctrl+Center activates the Pan View

� Ctrl+Right activates the Drag-Zoom View.

Note For two-button mice, the Pan View may be accesseCtrl+Alt+Left combination.

See View Menu on page 195 for more information.

Title Bar

When a 3D Model View is active, the L-Edit application ticurrent cell name, active window type in square brackets,Cellname [3D Model] Filename. Further, the application winto an icon, zoomed, resized, moved, or closed from this title


192

Menu Bar

us can be opened toessing the keyboard

rinting files.

ng, and printing

, and shifting the

exporting 3D .

lements and

.

help


The Menu Bar refers to six 3D Model View menus. The menshow available commands by clicking the menu bar or by prshortcuts indicated below:

File Menu

The File menu contains commands for opening, saving, and p

File Alt+F Commands for creating, opening, savifiles.

View Alt+V Commands for expanding, contractingview.

Tools Alt+T Commands for viewing, deleting, and models and editing process definitions

Setup Alt+S Commands for customizing interface eprogram functions.

Window Alt+W Commands for manipulating windows

Help Alt+H Commands for invoking Tanner EDA documentation.


193

out file.

ile, text files, or a has been saved to in a window with


Figure 78: File menu options

New Invokes a dialog to create a new text or lay

Open Opens an existing Tanner Database (.tdb) fsolid model in SAT format. If a 3D model this TDB file, the model can be brought up the View 3D Model command.


194

If you wish to open a SAT file, select File > Open, and choose 3D Model Filesa SAT file can bee edited.

, Close will simply

y generated 3D ws for the model enerated, open.

preview the and to change

here. If any .sat r on the list as t files.

n quit L-Edit.


(.sat) in the Files of type field. Recall that the view of manipulated by the 3D Modeler, but the model itself cannot b

If a model from an external (.sat) file is under examinationclose that file and close the window.

Close If the 3D Model View contains an internallmodel, then Close will close all the windoand leave the .tdb file, from which it was g

Print, Print Preview, Print Setup

These commands allow you to print and contents of the 3D Model View window,printer and print settings.

Recently Opened Files

The most recently opened files are listedfiles have been accessed, they will appeawell as the Tanner EDA database and tex

Exit Exit will prompt to save changes and the


195

View Menu

interactive viewing

of the Toolbars and

ngles are As you move wing angle


The View menu contains seven Preset Views and five options, namely, Spin, Orbit, Rotate, Pan, and Zoom.

There are also options for determining the look and content Status Bars.

Figure 79: View menu options

Preset Views > Isometric, Top, Front, Right, Bottom, Back, Left

As shown below, seven common viewing aavailable with the Preset View menu item.from one command to another, only the viechanges, not the magnification.


196

nu

as the X, Y, and Z-

ngles are As you move wing angle


Figure 80: Options of the Preset Views me

The Isometric view has equal X, Y, and Z-scales and haxes drawn 120 degrees apart.

Preset Views > Isometric, Top, Front, Right, Bottom, Back, Left

As shown below, seven common viewing aavailable with the Preset View menu item.from one command to another, only the viechanges, not the magnification.


197

For the View tools, the center of the 3D model is the origin of the X, Y, and the X-Y plane. Theck at the object andpositive Y directionewise, the Left viewrom the negative Zction.

otate around the at if your 3D ill appear to

model. This d its center (thus ee axes can be accessed

combination.


Z-axes, the Top view is from above the object, parallel toFront view is from the positive X direction looking baparallel to the Y-Z plane. The Right view is from the looking back at the object parallel to the X-Z plane. Likis from the negative Y direction, the Bottom view is fdirection, and the Back view is from the negative X dire

Spin This selection will cause the 3D model to rZ-axis for one complete revolution. Note thobject is symmetrical about the Z-axis, it wrevolve twice.

Orbit Orbit gives you an arbitrary view of the 3Dcommand causes the model to rotate arounaccomplishing angular motion along all thrsimultaneously) as you drag the mouse, andthrough a Ctrl+Left click keyboard-mouse


198

xis

is. As shown bout the X-axis, e X-axis is ouse button must activate the , not the model,

l appear to rotate


Figure 81: Selecting the X-axis as rotation a

Rotate Rotate refers to a motion about a single axbelow, you may choose to rotate the view aY-axis, or Z-axis. In the diagram below, thselected. Once Rotate is selected, the left mbe clicked and the mouse must be moved tocommand. Note that since the point of viewis shifted, moving the mouse to the left wilthe model to the right.


199

mouse combination.ll access Pan.

e maintaining its the mouse to the will move to the e screen, your

es the


Pan can be accessed through a Ctrl+Center click keyboard-For two-button mice, the combination Ctrl+Alt+Left click wi

Pan Pan translates your view of the object whilorientation and magnification. If you moveleft, the window will follow and your viewleft. If you move the mouse to the top of thview will follow to the top of the screen.

Zoom As shown below, the Zoom command varimagnification of the 3D model.


200

d

o.

o.


Figure 82: Selecting the zoom-in comman

Zoom > In Magnification is increased by a factor of tw

Zoom > Out Magnification is decreased by a factor of tw

Zoom > Fit Window

Magnifies the 3D model to fit the window.


201

, left click again area bounded by indow.

ly zoom towards the left mouse d backwards. agnification;

.

ar may be shown ched with L-Edit f the toolbars

g the box next to


Zoom > Box Left-click once to set one corner of the boxto select the opposite corner of the box. Thethe box will fill the entire 3D Model View w

Zoom > Drag Once you are in drag mode, you can smoothand away from the model by holding downbutton and dragging the mouse forwards anZooming towards the model increases the mzooming away decreases the magnification

Toolbars As shown below, the 3D Model View toolbor hidden. This same dialog box may be reaView > Tools > Toolbars command. Any oshown below may be hidden by uncheckinits name. Click Close to exit the dialog.


202

e Status Bar use Button Bar Model View. ox to its left.

.


Figure 83: Toolbars dialog

Status Bars As shown below, you may show or hide thwhile viewing 3D models. Note that the Moand Locator Bar are not active while in 3DYou may remove a bar by unchecking the bClick Close to exit the Status Bars dialog


203

age 213.


Figure 84: Status Bars dialog

For more information on the Status Bar, see Status Bar on p


204

Tools Menu

ete 3D Model, and Tools button of the

s through this he same action as n described in

.

3D model with a action as Tools > iewing 3D g that the model te it.


The Edit Process Definition, Regenerate 3D Model, DelExport 3D Model commands can all be accessed from the 3DMEMS Pro Palette.

Figure 85: Options of the 3D Tools menu

Edit Process Definition

You may import and edit process definitioncommand. This menu command performs tTools > 3D Tools > Edit Process DefinitioEditing the Process Definition on page 225

Regenerate 3D Model

This menu command overwrites the currentnewly generated one. It performs the same 3D Tools > View 3D Model described in VModels from Layout on page 188, assuminis not up-to-date and you chose to regenera


205

etup menu item on

3D model and

files in SAT or Tools > 3D orting 3D


Setup Menu

The Setup Application dialog can be reached through the Sthe 3D Model View menu bar.

Delete 3D Model

This command deletes the currently viewedremoves all of its open views.

Export 3D Model

This menu command allows you to export ANF format. It performs the same action asTools > Export 3D Model described in ExpModels on page 220.


206

Window Menu

create and arrangee, Arrange Icons,

n, starting from the title bars are (in front).

o not overlap. matrix.


The Window menu contains commands that are used to multiple windows. These commands are Cascade, TilSplit Horizontal, and Split Vertical.

Figure 86: Options of the Windows menu

Cascade Arranges windows in an overlapping fashiothe top left corner of the work area, so thatvisible. The active window remains active

Tile Resizes all the open windows so that they dWindows will appear in a row and column


207

he MEMS Pro Userormation about thed modules, version

senting rows

opies the 3D l or cross-section

ies the 3D model or cross-section

Names of all the e Split Vertical


Help Menu

Online versions of the standard L-Edit manuals as well as tManual can be directly accessed from the Help menu. Infinstallation of L-Edit on your machine, including installe

Arrange Icons Arranges any minimized window icons prestarting at the bottom left of the work area.

Split Horizontal

Splits the active window horizontally and cmodel view onto both panels. The 3D modeviews may be independently manipulated.

Split Vertical Splits the current window vertically and copview onto both panels. The 3D model viewviews may be manipulated independently.

Currently open files

The last items on the Windows menu vary.currently opened windows appear below thchoice.


208

number, memory allocation and how to contact technical support can be found by


selecting About L-Edit.

Figure 87: Options of the Help menu


209

3D Model Tool Bar

only used viewingection on page 215,s of each command

ction View

s > Isometric

s > Top

s > Front


The 3D Model Toolbar buttons represent the most commcommands. See View Menu on page 195, Viewing a Cross-sand Linking to ANSYS on page 223 for specific descriptionlisted below.

Figure 88: 3D Model View Toolbar

MEMS Pro Palette > 3D Tools > View 3D Model

3D Model Cross-se

View > Orbit View > Preset View

View > Rotate > X-axis View > Preset View

View > Rotate > Y-axis View > Preset View


210

nd. It is a hot link tory element analyses.n ANSYS.

YS buttons are bothn.

to the L-Edit layeres, not squares. Thes; these settings are

s > Right

s > Bottom

s > Back

s > Left


The bottom icon on the right is not a 3D Model View commaANSYS, a program that performs finite element and boundaSee the ANSYS Tutorial on page 176 for more information o

Note that in L-Edit layout mode the 3D Model View and ANSactive, while in 3D Model View mode, only the ANSYS butto

Palette

The 3D Model View palette is similar in look and functionpalette, except that individual choices are displayed as cub3D Model View palette displays the colors of the 3D bodie

View > Rotate > Z-axis View > Preset View

View > Pan View > Preset View

View > Zoom > Drag View > Preset View

View > Zoom > Box View > Preset View

View > Spin

Invokes ANSYS


211

related to the mask layer of the same name. The palette contains only the 3D

the interior of a 3Del View palette. Toayer (for two-button


bodies present in the active 3D model.

Figure 89: 3D Model View Palette

Hiding layers is particularly useful for obtaining a view of model. Layers may be hidden or shown using the 3D Modtoggle between hide and show, center-click on the desired lmice, Alt+Left click).


212

Hide or Show layers is also available from a context-sensitive menu. Right-clickow.

icon correspondingtive menu will offere All layers.


on the icon corresponding to the layer you want to hide or sh

Figure 90: Context-sensitive menu

If the body is currently hidden, as in the diagram above, theto that layer will appear with hash marks. The context-sensithe option to Show that layer, followed by Show All and Hid


213

If the body is currently displayed, the icon will appear as solid color, and the layer, followed by

r more information 1-221 of the L-Edit to Color Parameters

window, displays status bar containsor layout views.

as indicated in the

ayer is generated, at layer.


context-sensitive menu will display the option to hide theShow All and Hide All layers.

This control is similar to the hide/show feature of L-Edit. Foon this feature, refer to Showing and Hiding Layers on pageUser Guide. For more information on setting up colors, referon page 1-103 of the L-Edit User Guide.

Status Bar

The Status Bar, located at the bottom of the L-Editcontext-sensitive information on items in the interface. Thetwo panes. The right pane usually displays the L-Edit mode f

The left pane displays the status of the 3D Model View following table.

Action Description

The pointer is in the 3D Model View palette

The name of the identified layer. If a lthis will be the Boolean formula for th

A menu item is highlighted A list of the menu’s commands.


214

a status bar, select

erface. Uncheck the. Click Close to exit

Action Description


The status bar may be displayed or not. To Show or HideView > Status Bars.

Figure 91: Status Bars dialog

The checked status bars will appear as part of the viewer intbars you do not wish to see. They will immediately disappearthe dialog.

The pointer is in the tool bar The function of the identified tool.

All other times Ready.

3D Modeler Viewing a Cross-section

215

oolbar button snapsing, bringing up the

dialog

ce of the wafer. Thee and the X-Y plane the X-Y pairs in the

ontal or vertical


Viewing a Cross-section

From an active 3D Model View window, clicking the tthe 3D model to the top view and invokes cross-section viewfollowing dialog:

Figure 92: Generate 3D Model Cross-Section

All cross-sections are performed perpendicularly to the surfacross-section line is the intersection of the cross-section planof the 3D model. The endpoints of the cross-section line areparameter list below.

(X1, Y1), (X2, Y2) Coordinates of the cross-section line.Z-Scaling Factor The ratio of the height (Z) to the horiz

baseline (Not available in Version 3).


216

The orientation of the cross-section line along the width or length of the substratesing the Horizontalrtical button will set

; the cross-section

a torsional mirror


may be set with the Horizontal or Vertical buttons. Choobutton will set Y2 to the same value as Y1. Choosing the VeX2 to the same value as X1.

The cross-section line will appear in the 3D model windowview itself will appear in a new window.

Figure 93: Performing the cross-section of


217

In Figure 24, the various steps of the cross-section of a torsional mirror aree top view with theindows are tiled.

ing its ends. As theatically be updated.

ble, since each timen in the 3D cross-

[3D Model Cross-le 3D model view


displayed (clockwise from the upper left): the 3D model, thcross-section line, and the cross-section view. Note that the w

The cross-section line may be graphically modified by draggcross-section line is moved, the cross-section view will automSimultaneous views of different cross-sections are not possithe cross-section line is moved, the cross-section is redrawsection window.

The title of the 3D cross-section view reads CellNameSection] Filename. Multiple cross-section views of a singcannot be made.

3D Modeler Deleting 3D Models

218

l in the MEMS Pro

. Select This file tos to remove all 3D

he context-sensitiveut window, selectmenu, right-click onalog above.


Deleting 3D Models

To delete a 3D model, select 3D Tools > Delete 3D ModeToolbar. The following dialog will appear.

Figure 94: Delete 3D Models dialog

Select This cell to remove the 3D model in the active cellremove all 3D models in the active file. Select All open filemodels in all open files.

The Delete 3D Models dialog can also be accessed from tmenu of the Design Navigator. From an active layoView > Design Navigator. To activate the context-sensitive a cell. Select the Delete 3D Model command to invoke the di

3D Modeler Deleting 3D Models

219
Warning This operation cannot be undone.

3D Modeler Exporting 3D Models

220

Export 3D Modelnu of the MEMS Proquest the destination

pe you selected.

nsitive menu withincessed from L-Edit


Exporting 3D Models

3D models may be exported to SAT or ANF formats. Theoption may be reached from L-Edit through the 3D Tools meToolbar. Once accessed, the Export 3D Model dialog will reand format of your output file.

Figure 95: Export 3D Model dialog

Click the Export button to export a file with the name and ty

Export 3D Model can also be accessed through the context-sethe Design Navigator. The Design Navigator can be ac


221

through the View menu. Right-click on the cell of interest to access the Export

text-sensitive menu

1-353 of the L-Edit


3D Model command.

Figure 96: Accessing the Export 3D Model option via the con

For more information, refer to Design Navigator on page User Guide.


222

If you plan to view the model in another graphics program, then exporting the file, is sufficient. If youport in SAT or ANFg system.

em, and it is alwaysnder Windows NT

to SAT format.

called The ANSYSmat. You must haveport ANF files from


in SAT format, a general interchange format for solid modelsplan to use ANSYS to analyze your model, the decision to exformat will depend on your preferences and on your operatin

ANSYS is able to import ANF files under any operating systpossible to write directly to ANF format from MEMS Pro. Uand UNIX, MEMS Pro users also have the option of writing

Both MEMS Pro and ANSYS use an ANSYS module Connection Product for SAT to convert SAT files to ANF forthis connection module in your ANSYS directory both to exMEMS Pro, and to read SAT files into ANSYS.

3D Modeler Linking to ANSYS

223

e by ANSYS (seethe program.

licking the ANSYSot find the ANSYS

g or typing the pathn in the Windows


Linking to ANSYS

Once you have successfully exported your model for usExporting 3D Models on page 220), you are ready to invoke

The direct link to the ANSYS program can be accessed by cbutton from the 3D Model Toolbar. If the 3D Modeler cannexecutable, the following dialog will appear.

Figure 97: Locate Program dialog

Once you have located your ANSYS installation by browsinto it, click OK. L-Edit will make a record of this locatio

3D Modeler Linking to ANSYS

224

registry. You will not see this query again unless you move the ANSYS


executable.

3D Modeler Editing the Process Definition

225

from the ProcessEMS Pro Toolbar

the design file does, as shown below.

st either already bes Definition dialog,


Editing the Process Definition

Process definitions may be imported, exported, and editedDefinition dialog. This dialog can be accessed from the Mselecting 3D Tools > Edit Process Definition. Note that if not contain a process definition, the dialog will appear empty

Figure 98: Process Definition dialog

To construct a 3D model, process definition information mupresent in the design, entered manually through the Procesor imported from a process definition (.pdt) file.


226

Importing the Process Definition

ort in the Processow.

the Open button ton dialog. Click OK

to the .tdb file. Theill be available to


The process definition may be imported by clicking ImpDefinition dialog. An Open dialog will appear, as shown bel

Figure 99: Open dialog

After locating and selecting the process definition file, clickpopulate the Process Steps list in the Process Definitioagain to import the process information into the 3D Modeler.

When the file is saved, the process definition will be attachednext time the layout is opened, the process information wconstruct a 3D model; it will not have to be re-entered.


227

The Process Definition dialog may be used to Add Steps, Delete Steps, and to

dialog below. The Process Definition

x


edit the parameters of an existing Process Step.

A MUMPs process definition has been imported into thecommands correspond to the example used in the chapter onon page 352.

Figure 100: Process Definition dialog bo


228

Process identification information appears at the top of the dialog. A Processt for each Process

enter identifying

teps may be added,ut). 3D models of the Process Steps

a label. Below they 3D model for this

.

imeters, ther.


Step may be edited in the body of the dialog. A CommenStep may be entered at the base of the dialog.

Process Identification

At the top of the process definition dialog, you mayinformation.

Editing the Process Steps List

The process definition editor has several useful features. Sremoved, rearranged or disabled (that is, commented ointermediate processing steps can be displayed at points set inlist.

Each Process Step is identified by an order number and byProcess Steps list are two check boxes: Enable and Displa

Name The name of the process definition.

Version The version string of the process definition

Units Browse options for units are microns, millcentimeters, mils, inches, lambda, and o


229

step. These check-boxes select options to be applied to the selected Process

e the 3D model thatuncheck the Enable list.

oduce a 3D model.play 3D model for a new window willhat step. A separate open for each step

arrows allow you town within the


Step.

Enable

Process Steps are enabled by default. If you would like to seis created by omitting a given step, highlight the step and box. The disabled step will appear gray in the Process Steps

Display 3D model for this step

By default, the entire fabrication process is emulated to prIntermediate models can be displayed by checking the Disthis step box. When the 3D Modeler begins a checked step,open to display the model as it exists at the conclusion of twindow, titled cellname [3D Model Step #] filename, willmarked by Display 3D model for this step.

Move Step

To the right of the Process Steps list are two arrows. Thesemove a selected (highlighted) Process Step up or doProcess Steps list.


230

Add Step

y selected step, ande new step has been to the right of the Version 3 include

ecting the step and

aferID, Label, and

l be working on. fer, so this value e edited. Future ple wafers and


The Add Step button will insert a step below the currentllabel it New Step #. The default step type is Deposit. Once thadded, you can redefine the Command in the editing areaProcess Steps list. Commands available in MEMS ProDeposit, Etch, Wafer, and MechanicalPolish.

Delete Step

You may delete steps from the process definition by selclicking the Delete Step button.

Editing Individual Process Steps

All Process Steps have three parameters in common: the WComment.

WaferID This parameter identifies the wafer you wilMEMS Pro Version 3 supports just one Wais set to a default value of w1 and cannot bversions of the software will support multiuser-assigned names.


231

cess Steps list that when the process

ide of the Processd browse box on theMEMS Pro Versiontically. It appears in

hile the step is ort, descriptive

ommand in more


The first Process Step is automatically selected in the Proappears on the left side of the Process Definition dialogdefinition file is opened. It is usually the Wafer step.

Wafer

Wafer is selected in the Process Steps list on the left sDefinition dialog below. Wafer also appears in the Commanright side of the dialog. The WaferID appears below it. Since 3 only supports one Wafer, the WaferID is assigned automagray and cannot be edited.

Label This string appears in the progress dialog winterpreted during 3D model generation. Shterms are best for labels.

Comment A note describing each Process Step or Cdetail may be entered here.


232

ep


Figure 101: Characteristics of the Wafer st


233

Other parameters for the Wafer command are MaskName, Thickness, and

rs in the design nes the extent of ally defined by a ncluding circles are not touching to define the other layers n Wafer extent, odel is built. If no yer, its extent will ox of the layout

tical height of the

the design file. ering skName are

formation on 3D ng Colors for 3D


Target.

MaskName MaskName choices include the list of layefile. The geometry drawn on this layer defithe wafer. The boundary of the mask is usubox, but any drawing object may be used, iand curved polygons. Multiple objects thatcan also be drawn on the MaskName layerWafer extent. If there are objects drawn onwhose boundaries extend beyond the drawthose objects will be truncated as the 3D mclosed curve is drawn on the MaskName labe set to 110% of the minimum bounding bon all other masks.

Thickness Any positive value is acceptable for the verWafer.

Target Target choices include the list of layers in This parameter specifies the 3D model rendcharacteristics of the Wafer. Target and Matypically set to the same layer. For more inmodel rendering characteristics, see DefiniModels on page 186.


234

Deposit

eters will appear toepositType, Face,

de step


If the process Command is set to Deposit, a new set of paramthe right of the Process Steps list. These parameters are DLayerName, Thickness, Scf, and Target.

Figure 102: Characteristics of the Deposit Nitri


235

The three possible values of DepositType are CONFORMAL, SNOWFALL, and

ur of the processed shadowed by other

akes the surface ofequirements.


FILL.

CONFORMAL deposit adds a layer that follows the contowafer. SNOWFALL covers only those surfaces that are notsurfaces on the wafer. FILL is a maskless Process Step that mthe wafer a plane. Each DepositType has unique parameter r

DepositType = CONFORMAL

A CONFORMAL deposit is illustrated below.

t

Thickness Scf*Thickness


236

Parameters for CONFORMAL deposits are Face, LayerName, Thickness, Scf,

aterial deposited onaterial deposited onterial coverage t onf inclination of theection on Thicknessmber between 0 andf of 1.0, which is a

ottom), and dentifies the

for the design. ited; it is

vertical his thickness is ce parameter.

S Pro Version 3 is assumed to be


and Target.

The Scf (Sidewall coverage factor) is the height of the mvertical sidewalls divided by the Thickness of the mhorizontal surfaces of a CONFORMAL deposit. The mawalls at intermediate angles depends on the angle osidewall according to the relationship described in the sand Scf on page 368. Entries for Scf can be a decimal nu1, or the letter c. An Scf of c is equivalent to an Sc

Face Parameter options include TOP, BOT (for bTOPBOT (for both top and bottom). Face iside(s) of the wafer to receive the deposit.

LayerName Parameter choices include the list of layersLayerName identifies the layer to be depostypically set to the same value as Target.

Thickness Any positive number can be entered for thedimension of the CONFORMAL deposit. Tdeposited on the side(s) specified by the Fa

Scf The Scf parameter is not supported in MEMand therefore it may not be edited. Its value1.0 or c for this release.


237

completely conformal deposit, that is, a deposit with uniform thickness along

ristics, see Defining

surfaces, as showned surfaces have an

in the design file. aracteristics of

e are typically set


the wafer contour.

For more information on 3D model rendering characteColors for 3D Models on page 186.

DepositType = SNOWFALL

SNOWFALL deposits no material on vertical and shadowedbelow. Horizontal surfaces have the deepest coverage. Inclinintermediate amount of material deposited upon them.

Target Parameter choices include the list of layersTarget specifies the 3D model rendering chthe deposited layer. Target and LayerNamto the same value.


238

rName, Thickness,

ottom) and dentifies the

for the design. ited; it is often set

ed for the vertical s thickness is ce parameter.

face


Possible parameters for SNOWFALL deposits are Face, Layeand Target.

Face Parameter options include TOP, BOT (for bTOPBOT (for both top and bottom). Face iside(s) of the wafer to receive the deposit.

LayerName Parameter choices include the list of layersLayerName identifies the layer to be deposto the same value as Target.

Thickness Any positive decimal number may be enterdimension of the SNOWFALL deposit. Thideposited on the side(s) specified by the Fa

flat surface inclined sur


239


highest point of the

the design file. aracteristics of

same value as



DepositType = FILL

As illustrated below, the Thickness of FILL is set from the model at that step for the TOP Face.

Target Target choices include the list of layers in Target specifies the 3D model rendering chthe deposited layer. It is typically set to theLayerName.

Thickness


240

Possible parameters for FILL deposits are Face, LayerName, Thickness, and



for the design. ited; it is often set

as measured from OP face, or from BOT face (See any positive

on the side(s)

in the design file. aracteristics of e value as


Target.


Face Parameter options include TOP, BOT (for bTOPBOT (for both top and bottom). Face iside(s) of the wafer to be filled.

LayerName Parameter choices include the list of layersLayerName identifies the layer to be deposto the same value as Target.

Thickness The vertical dimension of the FILL deposit the highest point on the Wafer up for the Tthe lowest point of the Wafer down for thethe figure on page 377). Thickness may bedecimal number. The material is depositedspecified by the Face parameter.

Target Parameter choices include the list of layers Target specifies the 3D model rendering chthe filled layer. It is typically set to the samLayerName.


241

Etch

Command is set tocess Steps list. Thed on the selected

x


Etch is used to sculpt the terrain of the Wafer. If the processEtch, new parameters will appear on the right side of the Prospecific parameters required to define this step depencombination of EtchType and EtchMask.

Figure 103: Process Definition dialog bo


242

Possible EtchTypes are SURFACE, BULK, and SACRIFICIAL. Possible

ring previous steps.L etch completely

equire masking, andfor a SACRIFICIAL

when setting these

face (BOT), or boths for processing on

on of the masks. As to ensure correctr processing on theg on the top of the reversed). You mayk maker perform it.


EtchMasks are INSIDE and OUTSIDE.

SURFACE etches remove material that has been deposited duBULK etches remove parts of the Wafer. A SACRIFICIAremoves all bodies on the EtchRemoves layers. It does not rtherefore there is no setting for EtchMask or MaskName etch.

The orientation of the Wafer must be taken into account parameters.

Orientation Considerations

The Face to be etched may be the top face (TOP), the bottomfaces simultaneously (TOPBOT). If you are designing maskboth faces of the wafer, you must be careful of the orientatiAlan Nutt of Kodak Research Laboratories points out,alignment (as drawn in layout) of the masks designed fobottom of the wafer with the masks designed for processinwafer, the former must be flipped horizontally (i.e., left-rightbe required to perform the reversal yourself or have the masPlease consult your mask maker for further information.


243

Another consideration for SURFACE etch is whether the mask setting isSIDE (inclusive) or

metry are removedIDE, areas beneath

conductor masks).strate this effect:

elow.


inclusive or exclusive. EtchMask may be set to either INOUTSIDE (exclusive).

For EtchMask = INSIDE, areas beneath the mask layer geo(generally used for insulator masks). For EtchMask = OUTSthe mask layer geometry are protected (generally used forBelow, identical masks with different EtchMask settings illu

EtchMask = INSIDE

EtchMask = OUTSIDE

SURFACE, BULK, and SACRIFICIAL etches are described b

drawn mask

drawn mask


244

EtchType = SURFACE

oves parameter.

MaskName, Depth,diagram below, the


in the design. The e etched or

Drawn Mask


The SURFACE etch removes layers specified in the EtchRem

Parameters for SURFACE etches include EtchType, Face, Angle, Undercut, EtchMask, and EtchRemoves. In the parameter EtchMask is set to OUTSIDE.

Face Parameter options include TOP, BOT (for bTOPBOT (for both top and bottom). Face iside(s) of the wafer to be etched.

MaskName Parameter options include the list of layers geometry on this mask defines the area to bexcluded from etching.

Depth UndercutAngle

Drawn Mask


245

etch.

ch front will extend ndercut is the sk edge.

sk edge for both

yers that are ill be removed. e Thickness of

not be affected. h.

EMS Pro Version ue is assumed to

n MEMS Pro re may not be

release.


Etch Angle is the angle of the sidewalls achieved by the

For EtchMask = INSIDE, Undercut is the distance the etover the drawn mask edge. For EtchMask = OUTSIDE, Udistance the etch front will intrude beneath the drawn maUndercut = 0 is a sharply defined cut, aligned to the ma

Depth Depth of material to be etched. Only the laspecified in the EtchRemoves parameter wFor example, if the Depth is greater than ththe layer etched, the layer underneath will Any positive value can be entered for Dept

Angle The Angle parameter is not supported in M3 and therefore it may not be edited. Its valbe 90.0° for this release.

Undercut The Undercut parameter is not supported iVersion 3 for SURFACE etches and therefoedited. Its value is assumed to be 0 for this


246

cases.

ilicon wafer of 100s attacked at a muchne of the box is theis etch assumes

TOP face. A cross-

. This parameter e material to be wn layout.

in the design; on the name(s) of rk them with an is Etch step.


EtchType = BULK

The BULK etch sketched below is of KOH or EDP on a scrystal orientation. The pit is bound by the 111 plane, which islower rate than all other crystallographic planes. The outliminimum bounding box of the mask pattern. ThEtchMask = INSIDE. The etch is viewed from above the section corresponding to the dashed line appears below.

EtchMask Parameter options are INSIDE or OUTSIDEsets the mask orientation, that is whether thremoved is INSIDE or OUTSIDE of the dra

EtchRemoves Parameter options include the list of layersthese appear in a scrolling checklist. Click the layer(s) in the EtchRemoves list to maX. Marked layers will be removed during th


247

, Depth, Angle, and


e decimal number identified by the


BULK etch parameters include EtchType, Face, MaskNameUndercut.


Depth Vertical dimension of the etch. Any positivmay be entered for Depth. Only the layers EtchRemoves parameter will be attacked.

cross-section line

cross-section


248

the EtchRemoves has no setting for

hieved by the en 45.0° and

ber. It is the mask edge. ed to the mask


in the design; he name(s) of the hem with an X. Etch step.


EtchType = SACRIFICIAL

A SACRIFICIAL etch completely removes all bodies on layers. This etch does not require masking and thereforeEtchMask or MaskName.

SACRIFICIAL etch parameters are Face and EtchRemoves.

Angle Etch Angle is the angle of the sidewalls acetch, and is given as a decimal value betwe90.0°.

Undercut Undercut may be any positive decimal numdistance the etch front will extend over theUndercut = 0 is a sharply defined cut, alignedge.


EtchRemoves Parameter options include the list of layersthese appear in a scrolling checklist. Click tlayer(s) in the EtchRemoves list to mark tMarked layers will be removed during this


249

MechanicalPolish

p or bottom of the

ither a Depth or apth is truncated offThickness remains

before and afterf the wafer.


MechanicalPolish truncates the specified Depth off the toentire wafer, regardless of material type.

The effects of MechanicalPolish can be specified by eThickness, but not both. When a Depth is specified, that Dethe face of the wafer. When a Thickness is specified, that after polishing.

The drawing below gives the profile of a wafer MechanicalPolish. The depth d has been sliced off the top o

Depth = dBEFORE

AFTER


250

In the drawing below, the MechanicalPolish command has sliced material from

or bottom). Face . Note that only polished at a r this step.

r. It is the vertical from the highest the lowest point


the bottom of the Wafer and left Thickness = t.

Face Parameter options include TOP and BOT (fidentifies the side of the wafer to be etchedone side of the wafer may be mechanicallytime. TOPBOT is not an available option fo

Depth Depth may be any positive decimal numbemeasure of the material removed, measuredpoint of the Wafer for the TOP side, or fromof the Wafer for the BOT side.

AFTER

t

tBEFORE


251

mber. It is the s after the polish.

Wafer for the Wafer for the


Thickness Thickness may be any positive decimal nuvertical measure of the material that remainIt is measured from the lowest point of theTOP side and from the highest point of theBOT side.

3D Modeler 3D Modeler Error Checks

252

r generating the 3D

ous polygons in the


3D Modeler Error Checks

The 3D Modeler performs several checks before presenting omodel for view. These checks are the following:

� Is the 3D model out-of-date?

� Does the process definition exist?

� Are there derived layers in the process definition?

� Do all the required mask layers exist?

� Are there any visible wires or self-intersecting/ambigumask layout?

These checks are described on the following pages.


253

Checking if the 3D Model is Out-of-Date

on or layout used towarning dialog will what changes have

lect Regenerate toation.

. Click OK to returng the Edit Process


An existing 3D model is made obsolete if the process definitigenerate it has been altered. If a 3D model is out-of-date, a appear that states the situation (3D Model Out-Of-Date) andoccurred since the model was last generated.

Figure 104: 3D Model Out-Of-Date dialog

Select View to display the existing (outdated) 3D model. Sereplace the existing 3D model. Select Cancel to quit the oper

Checking if a Process Definition is used

A 3D model cannot be generated without a process definitionto the layout view and add a process definition by accessinDefinition dialog.


254

Checking for Process with Derived Layers

ou to use the L-Editto proceed with the

rs, see Introduction.

ers

present in the layer does not exist in the. Click OK to returnn be added.

ns

pported by the 3Dued that the objectsin the unsupportedroceed with model


If the process file refers to a derived layer, a note reminds ycommand Generate Layers before continuing. Click Yes generation of the 3D model. Click No to abort the operation.

Note For more information on generating layers and derived layeto Generated Layers on page 1-403 of the L-Edit User Guide

Checking for the Existence of all Required Lay

All layers specified in the process definition file must be setup. If any of the layers referred to in the process definitionlayer setup, a warning is issued specifying the missing layersto the layout view. Once in layout view, the missing layers ca

Checking for Wires or Self-Intersecting Polygo

Wires and self-intersecting polygons are not currently suModeler. If these objects exist in the layout a warning is isswill be ignored. The warning will list the cells that contaobjects. Click OK to ignore the unsupported objects and pgeneration.


255

8 of the L-Edit User


Note For more information, see Polygons and Wires on page 1-24Guide.

MEMScAP

256

257

261

265

269

272

273

276

277


7 ANSYS Tutorial

u��Introduction

��Reading the 3D Model in ANSYS

��Setting Boundary Conditions

��Meshing the Model

��Running the Analysis

��Displaying the Results

��Computing the Spring Constant

��Entering Models under Windows NT

ANSYS Tutorial Introduction

257

program. Once theite element module.

lysis of the springall force on one endction. You will then

located in thee visible in the work

b in the <install


Introduction

Files created by the 3D Modeler can be read into the ANSYS3D model is entered, it can be analyzed using any ANSYS fin

In this tutorial, you will perform a simple structural anamechanism on a lateral comb resonator. You will apply a smof the device model. ANSYS will compute the resulting deflecalculate the spring constant using Hooke’s law.

Launching L-Edit

� Launch L-Edit by double-clicking the L-Edit icon installation directory. A default file named Layout1 should barea.

� Close the Layout1 file by selecting File > Close.

Opening the File

� Use File > Open to open the file named spring.tddirectory>\tutorial\ansys directory.


258

The spring (see Figure 105) whose layout is shown below, was designed to be second polysilicon to the ground plane on the lower center.

rom the layout andout how models are Model on page 71.


fabricated with the MCNC MUMPS technology. It is on thelayer (Poly1) suspended over the ground plane. It is anchoredformed on the first polysilicon layer (Poly0) at the small areaof the spring. There are three dimples at the top of the spring

Figure 105: Viewing the spring

Viewing the 3D Model

The spring.tdb file already contains a 3D model built fMUMPS manufacturing process. You can find out more abconstructed in the main tutorial section entitled Viewing a 3D

Poly0ground plate

Poly1spring

dimples

anchor


259

� In the MEMS Pro Palette, choose 3D Tools > View 3D Model to view the model.

ring

s are ANF (ANSYSan write SAT files

format to use with called The ANSYS


Figure 106: Viewing the 3D model of the sp

Exporting the 3D Model

Two file formats used in MEMS Pro to describe 3D modelNeutral Format) and SAT (Save As Text). MEMS Pro cdirectly under all operating systems.

Under Windows 95, you must export your 3D model in ANFANSYS. MEMS Pro uses the ANSYS connection module


260

Connection Product for SAT to write the ANF file that describes your model. YouNSYS directory to

to use ANSYS canse to export to ANFduct for SAT as youMEMS Pro in SATt for SAT as it readsnection Product for

file for analysis in

click Export.

ails on connecting


must have this connection module installed in your Aaccomplish this task.

Under Windows NT and UNIX, MEMS Pro users who wishexport their files in either ANF or SAT format. If you chooformat, MEMS Pro will invoke The ANSYS Connection Proexport the file. If you choose to export your model from format, ANSYS will invoke The ANSYS Connection Producthe SAT file. In either case, you must have The ANSYS ConSAT installed in your ANSYS directory.

In this tutorial, you will export the 3D model as an ANFANSYS.

� Choose Tools > Export 3D Model.

� Set the file type to ANF, and the file name to spring.anf, and

Refer to <install directory>\ToAnsys\ansys.wri for detMEMS Pro output to ANSYS input.

ANSYS Tutorial Reading the 3D Model in ANSYS

261

he 3D Model View

; you may have toe default location is

and browse for the

al ways.

the edges of the 3DNSYS Utility menu,mes again.

otate.

mic Mode. The lefton controls rotation.


Reading the 3D Model in ANSYS

� Launch ANSYS by clicking the ANSYS button on ttoolbar.

The location of ANSYS depends on your individual systembrowse your file system to find the ANSYS executable. Thc:\ansys55\bin\Intel\ansysir.exe.

� In the ANSYS Utility menu, choose File > Read Input fromspring.anf file.

Viewing the 3D Model in ANSYS

Once the 3D model has been read, it may be viewed in sever

� In the ANSYS Utility menu, choose Plot > Volumes to showmodel. To view the model with shaded surfaces, from the Achoose PlotCtrls > Reset Plot Ctrls, then choose Plot > Volu

� In the ANSYS Utility menu, choose PlotCtrls > Pan-Zoom-R

� In the Pan–Zoom–Rotate menu, check the box labeled Dynamouse button now controls panning and the right mouse butt


262

ANSYS


Figure 107: 3D model of the spring displayed in


263

Setting Material Properties

olysilicon that has atio of 0.2. The 3Dad of converting thein this tutorial in as. In these units the

tio is dimensionless,

nto your model.

Props > Constant–

aterial number is set

r Young’s modulus


Our example assumes that the spring mechanism is made of pYoung’s modulus of 150 GigaPascals and a Poisson’s ramodel, however, is defined in microns and not meters. Inste3D model to meters we will perform all the calculations system of units consisting of microns, kilograms, and secondYoung’s modulus has the value of 1.5 x 105 (the Poisson’s raso it is unchanged).

You will now enter these material properties for polysilicon i

� In the ANSYS Main menu, choose Preprocessor > Material Isotropic.

� In the Isotropic Material Properties dialog, verify that the mto 1 and click OK.

� In the Isotropic Material Properties dialog, enter 1.5e5 fo(EX) and 0.2 for Poisson’s ratio (NUXY).

� Click OK.


264

Adding an Element Type

be declared for the

t Type > Add/Edit/

olid in the left box.

t 10node 92. Click

og


The element type specifies the mesh element shape. It mustfinite element before boundary conditions are set.

� In the ANSYS Main menu, choose Preprocessor > ElemenDelete.

� In the Element Types dialog, click Add.

� In the Library of Element Types dialog, choose Structural S

� In the right box, scroll to the Tet 10node 92 entry. Select TeOK.

Figure 108: Library of Element Types dial

� Click Close in the Element Types dialog.

ANSYS Tutorial Setting Boundary Conditions

265

yer below it (this isard pointing force toorner of the model.

f the 3D model arety menu and then anchor using eitherIt will be helpful iniewing angle is not

s > Loads–Apply > on Areas picking

around the display. is over them. Dragigure 109. Releasingumber 59). If you


Setting Boundary Conditions

You will anchor the spring to the surface it shares with the lasurface number 59 in the 3D model) and apply a small, leftwthe two keypoints (numbers 41 and 42) on the upper right cThis will cause the spring to bend slightly to the left.

First, anchor the spring.

� Picking the correct area will be easier if only the edges odisplayed. Choose Plot > Lines from the ANSYS UtiliPlotCtrls > Pan–Zoom–Rotate. Zoom in on the area near theone of the zooming tools in the Pan–Zoom–Rotate menu. picking the correct area to rotate the 3D model so that the vdirectly from above.

� In the ANSYS Main menu, choose Preprocessor > LoadStructural–Displacement > On Areas. The Apply U,ROTmenu will appear.

� Now hold the left mouse button down and drag the pointerNotice that different areas are highlighted while the pointerthe pointer over the anchor area until it is highlighted, as in Fthe mouse button will pick this area (which should be n


266

accidentally select another area, you can click Reset in the Apply U,ROT on

k OK in the Apply

model


Areas picking menu to unselect it.

� Once the correct area (and only this area) is selected, clicU,ROT on Areas picking menu.

Figure 109: Selecting a particular area of the 3D


267

� In the Apply U,ROT on Areas dialog, verify that DOFs to be constrained is Allement value. Click

plied.

the opposite end of

s > Loads–Apply >/M on KPs picking


DOF and Apply as is Constant value. Type 0.0 for DisplacOK.

Next, locate the keypoints, where the testing force will be ap

� Click Fit in the Pan–Zoom–Rotate menu. Now zoom in onthe model, near the dimples.

� In the ANSYS Main menu, choose Preprocessor > LoadStructural–Force/Moment > On KeyPoints. The Apply Fmenu will appear.


268

� Using the same technique as above, select the two keypoints on the upper rightfer to Figure 110 to

ring

OK in the Apply F/


end of the spring. These should be numbers 41 and 42. Recheck if you have selected the appropriate keypoints.

Figure 110: Selecting two keypoints on the sp

� Making sure that only these two keypoints are selected, clickM on KPs picking menu.

ANSYS Tutorial Meshing the Model

269

� In the Apply F/M on KPs dialog, make sure FX is shown for the Direction ofrce/moment valuetive X direction andunits are microns/

on the spring is two


force/mom and Apply as is set to Constant value. For Foenter -1.0 , i.e., the force on each node is pointing in the negahas a magnitude of one microNewton (remember our kilograms/seconds). Thus, the total leftward pointing force microNewtons.

Figure 111: Apply F/M on KPs dialog

� Click OK.

Meshing the Model

You are now ready to mesh the model.


270
� In the ANSYS Main menu, choose Preprocessor >MeshTool.

� In the MeshTool dialog, check the SmartSize box.

� Position the slider so that smartsizing is set to 8.

� Verify that Volumes is selected for Mesh, thatShape is set to Tet and that Mesher is set to Free.

� Click Mesh.

Figure 112: Mesh Tool dialog


271

� The Mesh Volumes picking menu will appear. Specify the volume for meshing

en press Return.

When the mesh ismanipulated by theodel.


by its number, rather than selecting it with the mouse.

� Select the spring by typing 4 in the ANSYS Input window, th

� Click OK in the Mesh Volumes picking menu.

The mesher will take a short time to mesh the spring. completed the elements are displayed. This display can be Pan-Zoom-Rotate menu in the same way as that of the 3D m

Figure 113: Meshed view of the spring

ANSYS Tutorial Running the Analysis

272

ary conditions, andal analysis.

t LS.

ommand window.ht corner.

g on CPU speed and

ear stating Solution


Running the Analysis

Now that you have set material properties, applied boundmeshed the model, you are ready to perform a linear structur

� In the ANSYS Main menu, choose Solution > Solve–Curren

� Take a moment to review the information in the /STAT CClose this window by clicking the Close icon in the upper rig

� In the Solve Current Load Step dialog, click OK. Dependinmemory allocation, the analysis may take several minutes.

� When the analysis is finished, an Information dialog will appis done!. Click Close.

ANSYS Tutorial Displaying the Results

273

ou must identify theto be displayed.

Results–First Set.

t Results >Contour

solution is selected to be contoured.

or the color scale on


Displaying the Results

The results of the analysis are not immediately displayed. Yresults you want to display, and specify how you want them

� In the ANSYS Main menu, choose General Postproc > Read

� In the ANSYS Main menu, choose General Postproc > PloPlot–Nodal Solution.

� In the Contour Nodal Solution Data dialog, verify that DOFin the left box and Translation UX in the right box for ItemANSYS will use the relative displacement in the X direction fthe contour plot.


274

� Choose Def shape only for Items to be plotted.

alog

ur results.

tility menu, choose

(true scale) as the


Figure 114: Contour Nodal Solution Data di

� Click OK.

� Choose Front from the Pan–Zoom–Rotate menu to view yo

� Note that the deflection is not to scale. From the ANSYS UPlotCtrls > Style > Displacement Scaling.

� In the Displacement Display Scaling dialog, select 1.0 DMULT Displacement scale factor.


275

� Click OK.


Now, the deflection is displayed to scale as in Figure 115.

Figure 115: Deflection results

ANSYS Tutorial Computing the Spring Constant

276

ximum deflection isis approximately 2g the applied load itand the maximum


Computing the Spring Constant

On the right side of the display window, notice that the ma3.9 microns. Thus, the spring constant for this device microNewtons / 3.9 microns = 0.5 Newtons/meter. By varyincan be verified that the relationship between the load deflection is linear.

ANSYS Tutorial Entering Models under Windows NT

277

e read directly intoowever, to use thisct for SAT module

and browse for the

rmat as described in


Entering Models under Windows NT

On Windows NT and UNIX systems, the SAT file may bANSYS without the need to export it in ANF format. Hcapability you must have The ANSYS Connection produinstalled.

� In the ANSYS utility menu, choose File > Import > SAT spring.sat file.

You may also export your model from MEMS Pro in ANF foExporting the 3D Model on page 259.

MEMScAP

278

erator

279

281

299

303

315

316

333


8 ANSYS to Layout Gen

��Introduction

��3-D to Layout Tools

��The Layout Generator Program

��Definition of a Technology File

��Limitations

��Tutorial

��Layout view of the mirror

ANSYS to Layout Generator Introduction

279

project an ANSYS Electronic Design

s been added to theies help you createame method as the

views)


Introduction

The ANSYS 3D-Model to Layout Generator allows you todatabase into a CIF file that can be read by almost allAutomation tools.

A palette of utilities, often used to create 3D structures, haMEMSCAP palette, in the 3D to Layout menu. The utilitkeypoints, lines, arcs, areas and volumes by using the s

Figure 1: Horizontal heat actuator (3D and 2D

ANSYS to Layout Generator Introduction

280

standard ANSYS commands. But these utilities are necessary to the generation of created volumes apresents (i.e. to theyout translator.

r adding them havetain the component


a layout from a 3D model. Indeed, they associate to thecomponent name relating those volumes to the material it relayer). These component names are necessary to the 3D to La

Options for editing volumes by moving them, subtracting oalso been added to the palette. These modifications mainname.

ANSYS to Layout Generator 3-D to Layout Tools

281

s, defined in severalP for the ANSYS to

YS Main Menu by


3-D to Layout Tools

Overview

The 3-D to Layout menu gathers frequently used commandlocations in ANSYS, with functions developed by MEMSCALayout translator.

� You can access the 3-D to Layout menu through the ANSselecting MEMSCAP Tools > 3-D to Layout (Figure 2).


282

enu


The Prompt dialog box appears (Figure 3).

Figure 2: Accessing the MEMSCAP Tools m


283

e

the 3D model, andile. See Component

otes.

u enter a componentaccount the first 8

eads “Bulketch”.


Figure 3: Setting up the technology file nam

� Enter the technology file name and press OK or Return.

This file defines the component names for the materials oflinks them to mask layer names in the corresponding CIF fNames, for more details.

Warning The name of the technology file must be enclosed in single qu

Note ANSYS restricts variable name lengths to 8 characters. If yoname of more than 8 characters, ANSYS only takes into characters. For example, if you enter “Bulketch1”, ANSYS r


284

Once the techno name is entered, the 3-D To Layout menu appears.

before its translation


Figure 4: 3-D to Layout menu

This menu (see Figure 4) helps you work with the 3D model to layout.


285

Import Mems

re 5).


� You can import a 3D model by clicking Import MEMS (Figu

Figure 5: Reading the 3D Solid model


286

You can choose to read an input file (.inp), a log file (.log) or an ANSYSugh the Read Inputttons in the ANSYS

x (Figure 6).

S


database file (.db). These commands are also available throFrom (for ASCII files) or Resume From (for a database) buFile menu.

Any of these choices brings up the same following dialog bo

� Select the file you want to import.

Figure 6: Reading a MEMS file in ANSY


287

Creation of Volumes

to Layout palette. but with some extra

s, cylinders, prisms


You can create keypoints, lines, arcs and areas using the 3-DThese commands are exactly the same as ANSYS commandsbook-keeping related to the materials used.

� By clicking the Create Volumes button, you can create blockand volumes by areas (Figure 7).


288

Figure 7: Create Volumes�button

8) prompts you toame is related to the volume will reside

ed volume


Once the volume is created, a new dialog box (see Figureselect a component name for the volume. This component nname of the mask layer on which the 2D projection of theafter translation.

Figure 8: Attaching a component name to the creat


289

If a volume has no component name, it cannot appear in the CIF file created byhan one component

names, the Volumeumber.

component names, do not change the

mponent name. Theomponent. You must

for the technology.

e in single quotes.


the ANSYS to Layout translator. If a volume has more tname, the program generates an error message.

If all the previously created volumes have valid component Number field is automatically filled with the next available n

Warning If your solid model contains volumes that are not attached tothe dialog box loads the smallest number of volumes. If youvolume number, this volume is associated to the selected covolume you first intended to create will not be attached to a cfill the dialog box with the correct volume number.

A scrolling list appears containing component names defined

� Enter the component name in the appropriate field.

� Click OK to record the component name.

Warning When entering a component name, you must enclose the nam


290

espond to nothing inLPOLY1.

can choose another

e) or if you want toou can click Definedialog box appears

odify it by deletingd redefining it usingte.

ed in every volume

u enter a componentnto account the first", ANSYS creates a


Warning In the layout, you cannot select hole layers because they corrANSYS. For example, you cannot choose HOLMETAL or HO

The volume is the same color as the component name. Youvolume number if this one has no component.

If you make a mistake (forget the single quotes, for instancattach a volume to a component without creating a volume, yComponent in the 3-D to Layout palette and the same (Figure 8).

Once a component name is attached to a volume, you can mthe component name associated with the selected volume anthe Define Component command in the 3-D to Layout palet

Warning If you remove a component name, this component is deletcontaining this name.

Note ANSYS restricts variable name lengths to 8 characters. If yoname including more than 8 characters, ANSYS only takes i8 characters. For example, if you enter "CONTACT_POLY


291

volume which component name is CONTACT_. Since this name does not existayout.

ayout palette. Twolow. To delete the the volumes, click

k radio button.

t, this component is


in the component list, and the volume will not appear in the l

Deletion of Volumes

This is a standard ANSYS command.

� To delete volumes, click Delete Volumes in the 3-D to Loptions are available: Volumes Only and Volumes & Bevolumes and all the areas, lines and keypoints created withVolumes & Below.

� Then, select the volumes you want to delete by using the Pic

Warning If you delete all the volumes attached to the same componenalso deleted and no longer appears in the component list.


292

Addition of Volumes

lette.

g that ANSYS will to MEMSCAP’s

tract Volumes and

dded or subtractedbox (see Figure 8)ume.

s, ANSYS loses theere and move it, all

8) appears to allowhich is not attached


� To add volumes, click Add Volumes in the 3-D to Layout pa

After the addition of volumes, a dialog box appears indicatinadd the areas of the new volumes. This is specificimplementation.

You can also subtract or move volumes by using the SubMove Volumes options of the 3-D To Layout menu.

These boolean operations delete the component of the avolumes. After the addition or the subtraction, the dialog appears in order to define a component name for the new vol

If you move a volume with non-circular arcs and circular arcinformation about the arcs. For instance, if you create a sphthe arcs of the sphere become straight lines.

Component Names

When you click Define Component, the dialog box (Figureyou to define the component name of the smallest volume wto a component.


293

Each component in ANSYS corresponds to the name of the layer in the resultingctions of connected

and the name of theogy is shown in the

(HOLPOLY andfined. Those layersst, but you must not


CIF file. Geometry on each CIF layer is made from projevolumes of several components.

The relation between the name of the component in ANSYSlayer in the resulting layout for a specific example technolfollowing table.

For the technologies, some layers representing holesHOLMETAL for example in the surfmic technology) are deare not used in the 3D models. They are in the components liassociate them with volumes.


294
The surface micromachining process

��

��

SUBSTRAT -

POLY poly

ANCHOR anchor

DIMPLE dimple

METAL metal

CONTACT contact

HOLPOLY holpoly

HOLMETAL holmetal


295

Saving Mems

can save them as actly the same as the

n the ANSYS Main

re 9).


If you made some modifications to the 3D Solid Model, youdatabase (see Figure 9) with the Save MEMS option. It is exaSave as... option in ANSYS.

� Select MEMSCAP Tools > 3-D To Layout > Save MEMS iMenu.

The Save Database of your MEMS dialog box appears (Figu


296

ame field, enter the

unit variable. If the Modeler, the unit is


� In the Directories list, choose the directory and in the File Nname of the database (.db), then click OK.

Unit

Before converting a database into a CIF file, define the mcp_3D model loaded in the ANSYS session comes from the 3Dthe micron.

Figure 9: Save Database of your MEMS


297

� Enter mcp_unit=1.0e-6 in the ANSYS Input window (Figure 10).

id model into a CIF

olid model must ben input file (.inp), ore ANSYS graphics

the ANSYS toolbar


Figure 10: ANSYS Input window

Exporting a CIF File

The Export CIF file option allows you to transfer a 3D solfile.

It creates a CIF file that any EDA tool can read. The 3D sloaded in the ANSYS active session as a database (.db), as aas a log file (.log). You can also create your volumes in thwindow.

To access this functionality, click the LAYOUT button in (refer to Section - The LAYOUT Menu Item).


298

For more details on this function, refer to Section - The Layout Generator

the LAYOUT button

r, you can recover ity clicking Clear &

choose the Read file

olbar


Program.

The LAYOUT Menu Item

In the ANSYS Toolbar, you can export a CIF file by clicking(see Figure 11).

If the LAYOUT button does not appear in the ANSYS toolbaby clicking 3-D to Layout in the ANSYS Main Menu or bStart New in the File menu of the ANSYS Utility Menu and option.

Figure 11: LAYOUT button in the ANSYS To

ANSYS to Layout Generator The Layout Generator Program

299

in the active session

the 3D solid model not want to load all

IF File in the 3D to12) prompts you to


The Layout Generator Program

Before exporting a CIF file, a 3D model must be represented of ANSYS.

In the layout (CIF file), the program creates all the layers ofdefined in the previously specified technology file. If you dothe layers, refer to Definition of a Technology File.

If you click LAYOUT in the ANSYS Toolbar or Export CLayout palette, the ANSYS to Layout dialog box (Figure enter the appropriate information.


300

tput file without its

hat will contain the

hnology file.


� In the CIF File Name field, enter the name of the CIF ouextension.

� In the Cell Name field, enter the name of the layout cell tlayout.

� In the Technology File Name field, enter the name of the tec

Figure 12: ANSYS to Layout dialog box


301

aracters and should

quotes are alreadyannot contain more

characters, ANSYS contains a dot, theced before the dot.ame is “demo”.

ined after launching

Data options of the


Note The technology file name should not be longer than 8 chmatch the one you used when you started the session.

Note All the entries must be between single quotes. These singleloaded in the dialog box. The CIF name and the cell name cthan 8 characters. If you enter a name including more than 8only takes into account the first 8 characters. If the nameLayout Generator only takes into account the characters plaFor example, if the cell name is “demo.1”, the resulting cell n

The CIF file is created under the working directory you defANSYS.

To import the CIF file in MEMS Pro, use the Import MaskFile menu in L-Edit.

� Select File > Import Mask Data.

The Import Mask Data dialog box appears (Figure 13).


302

ake sure you choseodel.


Figure 13: Import Mask Data dialog box

� You have the possibility to import a CIF or GDSII file. MCIF. By cliking Import, you open the layout view of the 3D m

ANSYS to Layout Generator Definition of a Technology File

303

technology file.

to a volume whichalso used to detect layout back and to

in the layout and ifdefine a componento not appear in theIDE.


Definition of a Technology File

This section provides information on how to create and use a

First of all, a technology file is used to attribute a CIF codehas a component name in ANSYS. A technology file is negative masks and substrate, to get the layer name for thedefine a component color in ANSYS.

To create a technology file, you need to know the layer namethese layers are a negative mask or not. Then you have to name, a CIF code and a color for each layer. Some layers dlayout but are important in the 3D-Model in ANSYS like OX

To create a technology file, first steps are:

[1] Defining the layer name in the layout

[2] Determining if the mask is negative or not

[3] Choosing a CIF code for this particular mask.


304

The general syntax of a line in a technology file is the following:

OR "Color Code"

ral layer (associated


Type Name "CIF code" "CIF hole code" COLLAYOUT "Layout layer" END

The possibilities are the following:

� Type

SU for substrate,

NEG for a negative mask,

* for a special layer,

A blank space or a tabulation should be used if it is a structuto a positive mask).

� Name

Name of the component in ANSYS (max 8 characters).

� CIF code

A 3-letter abbreviation for the CIF file.


305

� CIF hole code

nt rendering).

uld be associated to


CIF code for the layer’s holes.

� COLOR

Keyword / string for Color declaration in ANSYS (compone

� Color Code

Color code for the layer. For holes, use a blank space.

� LAYOUT

Keyword for a Layout Layer. Specifies if the layer in 3D shoa mask layer.

� Layout layer

The name of the layer in the layout.

� END

End of the line.


306

� Substrate

should exist.

inning of the linehnology file by this

" (associated to thisave a layer name in

character should be

layer / hole layer" is


Within ANSYS, an ANSYS component called SUBSTRAT

It helps you detect what is not covered by the negative mask.

In the technology file, place the "SU" string at the begdescribing this layer (we recommend you to start each teclayer).

SU SUBSTRAT COLOR CYAN END

� Positive Mask

"Normal", (positive), layers do not have specific declaration.

If these layers contain holes, you must define a "hole layerpositive layer) in the technology file. This layer should also hthe layout setup.

There is a specific declaration for this "hole layer". The "*"located at the beginning of the line describing this layer.

The following example shows you how the couple "positive declared:


307

The structural layer with ANSYS component name POLY1, and CIF code CPS ises in this layer are CHO. Holes do not

END

END

st not write it in the

ram detects a hole,taining the hole.

t.

NCHOR, VIA ...

in the layout.

component name.


RED in ANSYS and its layout layer name is POL1. Holmapped in a layout layer named HOLE1 which CIF code isappear in the 3D view.

POLY1 CPS CHO COLOR RED LAYOUT POL1

* HOLE1_WP CHO CPS LAYOUT HOLE1

If a mask is not in the layout, and if it has no holes, you mutechnology file.

Considering a layer whose holes are not defined. If the progthe layer name that is considered is the name of the layer con

� Negative Mask

This is a mask whose holes correspond to a layer in the layou

Holes in this type of layer can be mapped to layers such as A

Example: holes in an OXIDE layer can appear as CONTACT

Place "NEG" to declare the negative mask before the ANSYS


308

The following example represents an oxide component called OXI1 in ANSYS,layer with CIF codeegative mask has no

mmonly declared astructural layers such

inning of the lines

mbination of layers


with a CIF code AAA, and holes in the oxide mapped to the COF. The ANSYS component is Yellow in ANSYS. This nmask name in the layout:

NEG OXI1 AAA COF COLOR YELL END

� Special Layers

Anchors, dimples, contact and via layers / components are cospecial layers in the technology file. They are part of other sas Poly or Metal but at different heights.

In the technology file, enter the “*” character at the begdescribing these layers.

� N diffusion, P diffusion

These are “normal” layers, except for those defined by co(example for act-area crossing poly to perform transistor).


309

The following is a technology file of the front side bulk etching process for

END

END

END

END

END

END

END

END

END

END

END

END

END


ANSYS:

Hereafter is a technology file of the backetch process:

SU SUBSTRAT COLOR CYAN

* ANCHOR BAN BPO COLOR RED LAYOUT anchor

POLY1 BPO BHO COLOR RED LAYOUT poly1

METAL1 BME BHM COLOR BLUE LAYOUT metal1

* CONTACT BCO BME COLOR GREE LAYOUT contact

NEG PASS BPA BPA COLOR YGRE LAYOUT pass

* HOLPOLY1 BHO BPO LAYOUT holpoly1

* HOLMETAL BHM BME LAYOUT holmetal1

NEG LOCOS BLO BAN COLOR WHIT

NEG OXIDE BOX BCO COLOR DGRA


POLY1 PO1 HP1 COLOR RED LAYOUT poly1

POLY2 PO2 HP2 COLOR MAGE LAYOUT poly2


310

END

END

END

END

END

END

END

END

END

END

END

END

END

END

END

END

END

END


METAL1 ME1 HM1 COLOR BLUE LAYOUT metal1

METAL2 ME2 HM2 COLOR CBLU LAYOUT metal2

METAL3 ME3 HM3 COLOR BMAG LAYOUT metal3

* CONT_P12 CNT PO2 COLOR MAGE LAYOUT cont_p1p2

* VIA1 VI1 ME1 COLOR BLUE LAYOUT via1

* VIA2 VI2 ME2 COLOR CBLU LAYOUT via2

* VIA3 VI3 ME3 COLOR BMAG LAYOUT via3

NEG OXIDE2 OX2 CNT COLOR YELL

NEG OXIDE3 OX3 VI1 COLOR ORAN

NEG OXIDE4 OX4 VI2 COLOR GREE

NEG OXIDE5 OX5 VI3 COLOR YELL

NEG PASSIV PAS PAS COLOR YGRE LAYOUT passiv

NEG LOCOS LOC LOC COLOR WHIT

PWELL PWE PWE COLOR LFRA LAYOUT pwell

ACTIVE-N NPN NPN COLOR DGRA LAYOUT nplus

NPLUS NPP NPP COLOR DGRA LAYOUT nplus

PPLUS PPN PPN COLOR MRED LAYOUT pplus

ACTIVE-P PPP PPP COLOR MRED LAYOUT pplus


311

ANSYS:

END

END

END

END

END

END

END

END

END

END

END

END

END


The following is a technology file of the Surfmic process for

* HOLE_P1 HP1 PO1 LAYOUT holepoly1

* HOLE_P2 HP2 PO2 LAYOUT holepoly2

* HOLE-M1 HM1 ME1 LAYOUT holemetal1

* HOLE_M2 HM2 ME2 LAYOUT holemetal2

* HOLE_M3 HM3 ME3 LAYOUT holemetal3


POLY POL HPO COLOR RED LAYOUT poly

* ANCHOR ANC POL COLOR RED LAYOUT anchor

* DIMPLE DMP MET COLOR BLUE LAYOUT dimple

METAL MET HME COLOR BLUE LAYOUT metal

* CONTACT CNT MET COLOR GREE LAYOUT contact

* HOLPOLY HPO POL LAYOUT holpoly

* HOLMETAL HME MET LAYOUT holmetal


312

Some requirements:

negative mask

s.

onger than 8

ame of the CIF

hole.

r they belong to. to indicate the

n.


1 Place “SU” before the substrate, “NEG” before theor OXIDE, and “*” before particular layers.

There should be a space or a tabulation before the other layer

2) Name of the component in ANSYS should not be lcharacters.

3) Except for the substrate that has no CIF code, the ncode should not be longer than 3 characters.

4) For the negative mask: indicate the CIF code of its

5) For special layers: indicate the CIF code of the layeIn this example, for the ANCHOR layer, you have CIF code of POLY1.

6) For the substrate: enter either a space or a tabulatio

7) The “COLOR” string


313

8) The ANSYS color code, except for hole layers and substrate, is the


following:

MRED: Magenta-Red

CBLU: Cyan-Blue

YGRE: Yellow-Green

DGRA: Dark-Gray

MAGE: Magenta

CYAN: Cyan

YELL: Yellow

LGRA: Light Gray

BMAG: Blue-Magenta

GCYA: Green-Cyan

ORAN: Orange

WHIT: White


314

BLUE: Blue

or a tabulation.

if the layer does

ne.


GREE: Green

RED: Red

BLAC: Black

9) The “LAYOUT” string

If the layer does not appear in the layout, enter either a space

10) Indicate the name of the layer in the layout, except not appear in the layout.

11) Enter the “END” string to indicate the end of the li

ANSYS to Layout Generator Limitations

315

e resulting layout is

session.

generator considers


Limitations

Negative Mask Without Hole

For the time being, if a negative mask contains no holes, thnot correct.

Substrate

A substrate must appear in the 3D solid model of your active

Splines

If the 3D is defined with splines instead of lines, the layoutsplines as straight lines.

Boolean Operations on Layers

The tool does not handle boolean operations on layers.

ANSYS to Layout Generator Tutorial

316

o Layout Generator

d in an APDL file,eleting others, theno import is a micro

is tutorial.

directory. But, this


Tutorial

This tutorial illustrates how to use the ANSYS 3D-Model ttools.

For this tutorial, you will start from an existing model storeimport it in to ANSYS, modify it by adding volumes and dgenerate the corresponding CIF file. The model you want tmirror designed with the Surfmic technology.

Meshing and analyzing of the model is out of the scope of th

Import Mems

� Launch ANSYS 5.7 and select your working directory.

Note You can save all the necessary files under the same workingis not mandatory.


317

� In the ANSYS Main menu, click MEMSCAP Tools (see Figure 14).


Figure 14: ANSYS Main menu

The MEMSCAP Tools menu appears:

Figure 15: MEMSCAP Tools


318

� Then, click 3-D To Layout (Figure 15).

e must not be longer


The Prompt dialog box appears (Figure 16).

Figure 16: Prompt dialog

� Enter the technology file name, ‘Surfmic’.

Remember that single quotes are necessary and that the namthan 8 characters.

� Click OK.

The 3-D To Layout menu appears (Figure 17).


319
Figure 17: 3-D To Layout menu

� Click Import MEMS to import a 3D model.

The Import Mems menu appears (Figure 18).


320

).

x


Figure 18: Import MEMS menu

� Click Inp File, and the following dialog box opens (Figure 19

Figure 19: Import Your INP File dialog bo


321

� Select the mirror.inp file under the appropriate directory.

0).


� Click OK.

ANSYS warnings appear.

� Click OK to close the warning messages.

The 3D model mirror appears in ANSYS Graphics (Figure 2


322
Figure 20: ANSYS Graphics window


323

s of the levers.

out menu.

.


3D Modifications

You will now delete parts of the mirror. These parts are block

� Click Delete Volumes > Volume & Below in the 3-D To Lay

The Delete Volume & Below dialog box appears (Figure 21)


324

box


Figure 21: Delete Volumes & Below dialog


325

� Click the Pick radio button.

lever of the hinges)

22).


The cursor has changed to an upward arrow.

� Select the volumes you want to delete (two blocks for each by clicking on them. The color of the selected part changes.

� Then, click OK.

The model appears in the ANSYS Graphics window (Figure

Figure 22: Mirror with and without levers


326

The hinges of the mirror now have smaller levers.

MS menu item (see

order to indicate the

3D Modeler is theee Figure 23).


� Save the new mems file as a database (.db) using the Save MEFigure 9), and then click OK.

The Layout Generator Program

Before exporting a CIF file, define the mcp_unit variable in unit of the 3D Model.

� As the unit of the 3D model imported from MEMSCAP micron, enter mcp_unit=1e-6 in the ANSYS Input window (s



327

In the layout (CIF file), the program creates all the layers defined in the

t CIF Files in the 3-

rst field refers to thehe name of the cell name.


corresponding technology file.

� Click LAYOUT in the ANSYS Toolbar (Figure 24), or ExporD To Layout menu.

Figure 24: ANSYS Toolbar menu

The ANSYS to Layout dialog box opens (Figure 25). The finame of the CIF file without extension, the second one to tcontaining the layout, and the last field to the technology file


328

e cell and the name

.


Figure 25: ANSYS to Layout dialog box

� Attribute a name to the CIF file (mirror), enter the name of thof the technology file (’Surfmic’)

� Click OK.

The mirror.cif file has been created in your working directory

You can now access this file in MEMS Pro.

� Launch L-Edit.


329

� Select File > New to create a new file.

setup from file.

27).


The New File dialog box appears (Figure 26).

Figure 26: New File dialog box

� Choose Layout as File Type and <empty> in the Copy TDB

� Click OK.

� Select File > Replace Setup.

The Replace Setup Information dialog box appears (Figure


330

box

directory.


Figure 27: Replace Setup Information dialog

� Browse for the ledit.tdb file that is located in the installation

� Click OK.

� Select File > Import Mask Data.


331

The Import Mask Data dialog box appears (Figure 28).

pe field and browseS.


Figure 28: Import Mask Data dialog box

� Indicate the appropriate file type (CIF) in the Import file tyfor the mirror.cif file you have previously generated in ANSY

� Click Import.


332

�


The Layout of the mirror appears in the L-Edit window.


333
Figure 29: Layout view of the mirror

MEMScAP

334

ling

335

370


9 Reduced Order Mode

��User Manual

��ROM Tutorial

Reduced Order Modeling User Manual

335

customized ANSYSodels describing 3Dhe resulting modelse.g. displacement oflerations, voltages).

L-ATM* languages.

s of freedom so thatcan be prohibitivelylify models or limitions. The solution is a form that capturesdirectly compatible


User Manual

Introduction

The ROM (Reduced Order Modeling) tool is a MEMSCAP feature. It allows you to automatically generate behavioral mstructures reduced to a few master degrees of freedom. Tdescribe the behavior of the considered degrees of freedom (nodes) according to variations of the applied loads (e.g. acce

The behavioral models are written in SPICE and/or HDAdditional formats will be implemented in further releases.

Finite element models may involve a large number of degreefull simulation, especially in the case of transient analyses, expensive. As a consequence, designers really have to simpthe available results in order to obtain accurate but fast solutto create reduced order models from finite element models inthe essential physical behavior of a component and that is with a system-level description.

*HDLA is a trademark of Mentor Graphics Corporation


336

You can describe the dynamic behavior of a finite element model (assumed to be

(1)

s of freedom. TheyFs can be very high

stiffness, mass ande system, its inertia

ral variables.

ndensation, consistsing reduced set of

(2)}


linear) using the following matricial equation:

The variables contained in the {x} arrays are called degreeentirely describe the state of the system. The number of DO(104 to 106).

The [K], [M] and [C] matrices are respectively called the damping matrices and characterize the elastic behavior of thand damping effects.

The {f} array contains the equivalent forces related to structu

One reduced order modeling approach, called reduction or coin describing the behavior of the model by the followequations:

M[ ] x{ }·· C[ ] x{ }· K[ ] x{ }+ + f{ }=

M[ ] x··R{ } C[ ] x·R{ } K[ ] xR{ }+ + f{=


337

R.O.M. Menu

are, the followingou can find help orser Manual.

YS Main menu hass via the MEMSCAP


When running the MEMSCAP customized ANSYS softwwindows appear. They are the typical ANSYS windows. Yinformation on them in the ANSYS help or in the ANSYS U

In the MEMSCAP customized release of ANSYS, the ANSbeen updated to give access to MEMSCAP additional featureTools button.

Figure 30: ANSYS Main menu


338

� To access the MEMSCAP Tools menu, click the MEMSCAP Tools option of the

s.

ain menu.


ANSYS Main menu.

A new window containing the MEMSCAP Tools menu open

Figure 31: MEMSCAP Tools menu

� Click R.O.M Tools to access the Reduced Order Modeling m


339

Figure 32: R.O.M. Tools menu

s available in thee window are not

log box (Figure 33)ced models will be

. The options can be


This menu gives you access to the reduction algorithmMEMSCAP tool. Algorithms that are greyed in the abovavailable at this time.

The first button, Output options, gives you access to a diaallowing you to select the format(s) under which the redugenerated.

Figure 33: Output options dialog box

At this time, two formats are available: HDLATM and SPICEindependently checked or unchecked.


340

Condensation Algorithm

ccess to a classicalas strongly coupledduced according to

the static or Guyanf freedom that are (selected degrees ofreedom (condensed

n that consists inlated to the selected

xternal world usingplicit forces can beation of equivalentm.

the system eigen


The Condensation part of the R.O.M. Tools menu gives areduction algorithm. It can deal with a single field as well equations. For example, structural linear systems can be rethis condensation algorithm.

Fundamentals

The principle of this condensation method, usually known asmethod, consists in selecting a reduced set of degrees oassumed to be representative of the complete model behaviorfreedom) and in eliminating the remaining degrees of fdegrees of freedom) from the initial set of equations.

This condensation algorithm introduces the approximatioassuming that the set of condensed degrees of freedom are reones by the means of the static behavior equation.

In practice, the reduced model can only be connected to the ethe set of selected degrees of freedom. In the same way, exapplied to them, eventually combined with a linear combinloads computed in accordance with the condensation algorith

This reduction method leads to an overestimation of frequencies.


341

Running the Condensation

d the finite elementdes, cells (possiblyif any) and physicalcluded in the load

t model: executing a, using the GUI or

load cases can beprocess. Any givend cases can then beduced load arrays.

h the model will bethose you want torithm introduces anhoice of the master


[1] Defining a model

Before using the MEMSCAP R.O.M. tools, you have to loamodel of a structure in ANSYS. That means at least nogenerated upon geometrical entities), requested parameters (properties as well as boundary conditions that are not incase(s). There exist multiple methods to load a finite elemenmacro, introducing commands in the ANSYS Input windowcombining the three previous methods.

[2] Introducing loads

Regarding the theoretical basis of the algorithm, multipleindependently taken into account during the condensation load case obtained by linear combination of the initial loaintroduced in the reduced equations by combination of the re

[3] Selecting master degrees of freedom

You have to define one or more degrees of freedom to whicreduced. In practice, these degrees of freedom are often concentrate on. Nevertheless, running the condensation algoapproximation to the model behavior that is related to the c


342

degrees of freedom. You have to make sure that the selected master degrees ofst.

rees of freedom inccessed through theon).

in the R.O.M ToolsFrom LS file. Thection with only one


freedom are representative of the structural behavior of intere

You can select the degrees of freedom (called master degANSYS) using the ANSYS M command that can also be aGUI (refer to the ANSYS documentation, for more informati

[4] Performing reduction

To easily manage the load cases, two buttons are available menu under the Condensation option: Current LS and Current LS option allows you to perform a condensation redu


343

load case and one degree of freedom. The From LS file allows you to perform a load cases.


condensation reduction with multiple degrees of freedom and



344

defined load case, ifnter the output file

box

ialog box.

tion with one single Load Cases in this


� Current LS

� If you click Current LS, the algorithm applies the currently any. In this case, a dialog box opens and prompts you to ename.

Figure 35: Condensation - Current LS dialog

� Click OK to run the algorithm or select Cancel to close the d

Note For more information on performing the condensation reducDOF, refer to Condensation: Reduction with Single DOF &chapter.


345

ad cases. These loader to the ANSYSe files must be the s letter followed by

utput file name and the arguments of a

g box

ialog box.


� From LS files

� If you click From LS files, the algorithm applies multiple locases have to be previously defined in LS files (refdocumentation, for further information). The name of thescurrent ANSYS jobname and the extension must contain thethe LS file number.

In this case, a dialog box opens, prompting you to enter the oa selection of LS files to process. This is done by definingloop.

Figure 36: Condensation - From LS files dialo

� Click OK to run the algorithm or select Cancel to close the d


346

ction with multipleFs & Load Cases in

er is called and as aare created in yourS jobname remains

ed in your currenttput file prefix youing of the different

TM


Note For more information on performing the condensation reduDOFs, refer to Condensation: Reduction with Multiple DOthis chapter.

[5] Generated files

In both cases, when running the algorithm, the ANSYS solvconsequence, classical ANSYS results and temporary files current working directory. During this process, the ANSYunchanged.

A temporary file named scratch is also generated.

Result files associated with the reduced model are creatworking directory by adding the appropriate suffix to the oupreviously entered. The following table provides the meansuffixes.

Suffix Description

.sub ANSYS substructure file

.hdla Reduced model, described in HDLA

.sp Reduced model, described in SPICE


347

��

umped basic circuitnd current sources).

om you entered, the high. Nevertheless,odes) remains low.egories:

input1, input2...) asANSYS simulation

p files as degrees ofdes called output1,ge signals on these degrees of freedom

reference when the

ad case), one output

cap Model Builder


This type of (optionally) generated file contains a set of lelements (resistors, capacitors, inductors, controlled voltage a

Depending on the number of load cases and degrees of freednumber of nodes in the generated equivalent circuit can bethe number of nodes for simulation (external connecting nThese external connected nodes can be classified in three cat

1. The input nodes: there are as many input nodes (called load cases. For SPICE simulations, the inputs used during must be applied to these entries as voltage excitation.

2. The output nodes: there are as many output nodes in an .sfreedom (e.g: with 3 degrees of freedom, you have 3 nooutput2 and ouput3). During system simulation, the voltaoutputs are very close to the behavior of the correspondingcalculated by the FEM simulator.

3. The ‘0’ node: this node must be connected to the voltagecircuit model is instantiated in a larger SPICE circuit.

The following is an example of a generated one input (one lo(one degree of freedom) .sp circuit:

* T-Spice equivalent netlist generated by Mems


348

.param m11 = 1.151887e-06

ms

you access to anural systems. In thisle structural degree


.param d11 = 1.151887e-03

.param k11 = 4.116023e+01

.param l11 = 1.150145e-06

GM11 output1 0 output1_d2t 0 ’m11’GL11 0 output1 0 input1 ’l11’

RK11 output1 0 ’1/k11’ C_output1 N11 N12 1 E_output1 N11 0 output1 0 1 V_output1 N12 0 0 Vdamp_output1 output1 N13 0 FD11 N13 0 V_output1 ’d11’ Hvel_output1 output1_dt 0 V_output1 1 L_output1 output1_d2t 0 1

Fvel_output1 0 output1_d2t V_output1 1

Reduction of Electrostatically Coupled Structural Syste

The Electrostatic part of the R.O.M. Tools menu givesalgorithm for the reduction of electrostatically coupled structalgorithm, the system can only be reduced in terms of a singof freedom.


349

The reduced model consists of a scalar equation describing the transient behaviorapacitance values in

med to be linear and its behavior can be

(3)

d {V} arrays whichons) and electrical

called the stiffness,avior of the system,

structural variables.he irrotationality of

f x V( , )

q


of the system, possibly combined with a relationship giving cterms of the selected degree of freedom.

Fundamentals

In the case of an electrostatic-structural coupled system, assumodeled by a finite element model, the equation governingwritten as follow:

You can split the array of degrees of freedom into the {x} anrespectively describe the structural (displacements, rotati(potential) state of the system.

The [K], [M] and [C] structural matrices are respectively mass and damping matrices and characterize the elastic behits inertia and its damping effects.

The {f} array contains the equivalent forces related to the The electrical equation is time-independent and expresses t

M 0

0 0

x

V

··C 0

0 0

x

V

·K 0

0 Kν

x

V

+ + =


350

the electric field combined with Maxwell’s divergence equation. The {q} array

d. That means off-en the two physicsnly be solved using

lectric field can bes of conductors, theral equivalent forcesre according to the

statically with itsom.

be reduced to the

(4)


introduces a possible free charge loading of the structure.

These two sets of equations are said to be weakly couplediagonal terms of the matrices are null and coupling betwearises from the load expressions. This kind of equations can oan iterative process.

Once the electric potential field equation is solved, the ededuced from the scalar potential and, on the external areaexpression of electrostatic pressure can be evaluated. Structuare then computed by integration of the electrostatic pressustructural degrees of freedom.

[1] Structural behavior

Considering a structure that globally interacts electroenvironment, the output of interest is a single degree of freed

From the structural point of view, the model behavior canfollowing single scalar equation:

mx··R cx·R kxR+ + f xR V( , )=


351

The mass (m), the damping coefficient (c) and the stiffness (k) are computed byed in the previous to a spring-damper.

ded into the term ofpplied between the

pproximation of the be adjusted.

equency is given ining expression:

(5)

y running a modalequation allows youel that has an eigent of the full model.


the application of the Guyan reduction algorithm, describsection. This reduced model corresponds to a mass connected

The displacement dependent electrostatic interaction is incluexternal force in which V represents the bias voltage astructure and the environment.

[2] Tuning eigen frequency

As the Guyan reduction algorithm leads to an overestimated asystem eigen frequency, the reduced system parameters must

In the case of single degree of freedom systems, the eigen frterms of the stiffness (k) and reduced mass (m) by the follow

Computing the eigen frequency of the complete model banalysis and considering the reduced stiffness, the previous to define a corrected reduced mass to obtain a reduced modfrequency that matches exactly the eigen frequency of interes

[3] Electrostatic loads

ν 12π------

km----=


352

The idea of this approach is to generate a numerical approximation of the

(4), representing the performed.

nfigurations of theting on the structuretructural reduction

result, a polynomial

e structural systemertheless, the output on the structural

pression in terms ofduction procedure.

loads.


external force term.

In order to obtain an expression of the last term of equation force versus displacement dependency, a numerical fitting is

The procedure consists in generating a set of deformed cocomplete model. For each of them, the electrostatic loads acare computed and condensed in accordance with the salgorithm.

In order to obtain an analytical expression of the previous fitting is performed.

[4] Capacitance evaluation

The previous reduction method allows you to compute thbehavior taking into account the electrostatic coupling. Nevvalue of interest may be an electrical result, dependingconfiguration.

To match this requirement, the generation of a capacitance exthe selected degree of freedom was added to the structural re

This generation is based on the same fitting procedure as the


353

Running the Reduction Algorithm

ad a finite elementata related to both

eans at least nodes, well as boundary

generate a commondependent physicalfiles (refer to the

.

med using multiplethe ANSYS Input

le of solution is to each equation using

etry before solvings in the structural


[1] Defining a model

Before using the MEMSCAP R.O.M. tools, you have to lomodel of your structure in ANSYS and provide all the delectrical and structural behaviors of your system. That mrequested parameters (if any) and physical properties asconditions.

To provide a complete finite element model in ANSYS, geometrical model and separately describe the two inenvironments (electrical and structural) using PHYSICS ANSYS User Manual and documentation, for further details)

The generation of the requested files and data can be performethods: executing a macro, introducing commands in window, using the GUI or combining those three methods.

In the case of electrostatically coupled systems, the principiteratively solve the electrical or structural equation updatingthe results of the previous one. That means updating the geomthe electrical equation and introducing electrostatic loadequation.


354

In practice, structural components are separated by gaps most often filled withstructural stiffness

gap elements when displacement fields. Such features aregorithm.

el gaps as structuralmaterial properties). the mesh update in one obtained using

nite boundary, it isomain (refer to the

such a feature, youeed, in the structuraltz domain must bet equations deleted,

that has a file nameorbidden to use this


air, that is a material that does not contribute to the calculation. So, it is not mandatory to take into account solving the structural equation if it is possible to extrapolateinto the gaps in order to update the mesh of these zonesavailable in ANSYS but are not managed by the reduction al

As a consequence, to use the reduction tool, you must modcomponents (possibly associated with negligible structural The structural fields are thus solved in the entire space. Andgap zones occurs naturally with a greater efficiency than theANSYS mesh management features.

In the case of an electrical model featuring an open inficonvenient to model the far field behavior using a Trefftz dANSYS documentation, for more information). When usinghave to carefully generate the model and PHYSICS files. Indenvironment, the superelement associated with the Treffcanceled (element type set to 0) and the associated constrainas well as infinite flags that become meaningless.

Furthermore, as the Trefftz domain includes a substructure that is based on the current ANSYS jobname, it is strictly fjobname as an output file name.


355

[2] Selecting Master Degrees of freedom

the model will bent to concentrate on.s an approximation master degrees ofrees of freedom are

S M command that documentation, for


You have to define a single degree of freedom to whichreduced. In practice, it is often the degree of freedom you waNevertheless, running the condensation algorithm introduceof the model behavior that is related to the choice of thefreedom. You have to make sure that the selected master degrepresentative of the structural behavior of interest.

You can select the master degree of freedom using the ANSYcan also be accessed through the GUI (refer to the ANSYSmore information).


356

OF button of the

efine data as well asalues are suggested,uration.


[3] Performing reduction

� To start the reduction algorithm, click the Single DElectrostatic option.


The following dialog box (Figure 38) opens, asking you to dalgorithm control parameters. For some parameters, default vbut you must check their compatibility with your own config


357

t be longer than 8

DOF dialog box


Note Character strings must be in single quotes and must nocharacters.

Figure 38: Electrostatic - structure reduction to single


358

The output file radical is a prefix used to create result files (see generated files).

l (prefix) and a file

you have to defineical environments.

rning the transientedom. If required, an also be generated.pacitances that ares on the number of

pendent. Transient coupled structurale resulting master

eck the Compute

into conductors thatem, a component ofe component is the


ANSYS Physics files are defined by a title, a file radicaextension.

In accordance with your own model generation procedure,these three character strings for both the structural and electr

The reduction algorithm generates a scalar equation goveresponse of the system in terms of the master degree of frecapacitance versus master degree of freedom relationship caThe capacitance values you extract are the lumped capresented as matrix results. The size of the matrix dependconductors and the ground definition.

The generated capacitance relationship is time-indecapacitance values can be obtained by solving the reducedequation and applying the capacitance relationship to thdegrees of freedom values.

To activate or disable this relationship generation, chcapacitance box.

From the electrical point of view, the system can be divided electrostatically interact. To allow the algorithm to access thnodes must be associated to each conductor. The name of th


359

Conductors component name defined in the dialog box followed by theer than 8 characters.

to 2.

st be defined. It may to be at infinity. In conductor (greatest

field to specify the

thm needs to apply electrostatic forces.cified in the dialog

may be a conductor

algorithm that forcepoint by point. Analues according to a

polynomial in terms maximum degree


Number of conductors. Component names must not be long

You must specify the Number of conductors. It is restricted

In an electrical system, a ground (bias voltage reference) mube associated with a modeled conductor or may be assumedthe first case, the ground is assumed to be the last definedconductor number).

Choose Last conductor or At infinity in the Ground Keyappropriate configuration.

To perform the reduction of the coupled system, the algorielectrical excitation to the system and evaluate the resultingThis excitation is applied using the component of nodes spebox as the Excitation component name. This component component.

It has been explained in the theoretical presentation of the and capacitance relationships are numerically computed analytical expression is then extracted from these numerical vmean square fitting method. This analytical expression is a of the reduced degree of freedom, or its inverse, with a(Degree of fitting) you can define in the dialog box.


360

The principle of the coupled system reduction algorithm is to analyze itscovers the range ofgree of freedom by

er of configurations of fitting points).

er of fitting points.

theoretically has no possible numericald to the excitation

meter related to the

rithm explained thatrix that leads to anTo overcome this

en performed and aatch a given eigen

nitial reduced eigenaximum number of


electrical behavior in a set of structural configurations that use. You must define this interval in terms of the master degiving its Minimal and Maximal fitting values. The numbused for the sweeping range must also be specified (Number

Note The Degree of fitting must always be smaller than the Numb

The Reference bias voltage is a control parameter that effect on the results but has been introduced to deal withtroubles. This value is used as the bias voltage appliecomponent to perform the coupled system analysis.

The Maximum number of eigen modes is an advanced parareduced model frequency response tuning process.

The theoretical presentation of the Guyan condensation algothis method introduces an approximation on the mass matoverestimated approximation of the eigen frequencies. behavior, a modal analysis of the structural system has becorrected reduced mass value has been computed to mfrequency.

As an upper limit of the eigen frequencies is of interest (ifrequency), the modal analysis is performed by imposing a m


361

modes to compute (the default is 10) as well as the upper limit of the frequencies. could nevertheless

ber of eigen modesn mode of interest

cy gap between theerror on the eigene, you must indicatess. Nevertheless, innable to accurately

to run the algorithm

inted in the ANSYSus as well as results

e algorithm.


This works correctly in the average case, but the procedurefail in some particular cases.

Regarding the procedure, it is obvious that the maximum numto compute must be greater or equal to the structural eige(related to the master degree of freedom).

A second case of failure is a system in which the frequenmode of interest and the following one is less than the frequency induced by the condensation algorithm. In this casthe number of the mode to be considered in the tuning procesuch a case, the reduced structural model will probably be urepresent the transient response of the real system.

� Once you have completed the previous dialog box, click OK or select Cancel to close the dialog box.

[4] Algorithm output

When the reduction algorithm is running, information is prOutput window. The display is related to the algorithm statand accuracy estimation.

Hereafter, is an example of display during the execution of th


362

The first information displayed is the title of the algorithm and a summary of the

****************

****************

rithm.

s the reduced values


data you entered in the previous dialog box.

***************************************************Electrostatic reduction (single degree of freedom)***************************************************

Structure PHYSICS:File = "structu.phy"Title = ""

Electrostatic PHYSICS:File = "electric.phy"Title = ""

Conductors name = "cond"Number of conductors = 2Ground key = 0Capacitance matrix dimension = 1Excitation component = "cond2"

The next display is related to the structural condensation algo

The name of the ANSYS substructure file is printed as well aof mass, damping and stiffness.

==============================Run structural substructuring


363

==============================

tuning procedure.

el appear, followedd mass values.

epresentation of the


ANSYS substructure file = "tmp.sub"

Waiting for ANSYS solution ... Done

Structural reduced parameters:

Stiffness (k) = 1.1646848e+00Mass (m) = 4.9866184e-12Damping (c) = 0.0000000e+00

Then, comes the modal analysis and the frequency response

Structural eigen frequencies computed on the complete modby a comparison between the estimated eigen frequencies an

The comparison of the values gives an indication on the rmode by the selected master degree of freedom.

==============================Run structural Modal analysis==============================

Waiting for ANSYS solution ...Done

------------------------------

Mode Frequency------------------------------


364

1 7.6670774e+04

9 % shift)

8 % shift)

or coupled effects

lyses.


------------------------------

Tuning transient response:

Expected eigen frequency = 7.6670774e+04

Approximated eigen frequency = 7.6916812e+04 (0.320Reduced mass = 4.9866184e-12

Corrected mass = 5.0186740e-12 (0.642

The next output indicates the sweeping parameters fevaluation.

During these analyses, a status is printed after each set of ana

=============================Perform coupled analyses=============================

Number of analyses = 10Degree of fitting = 4Minimum DOF value = -2.0000000e-06Maximum DOF value = 1.0000000e-06Reference bias voltage = 1.0000000e+00

--> Performing set of coupled analyses number 1/10--> Performing set of coupled analyses number 2/10--> Performing set of coupled analyses number 3/10--> Performing set of coupled analyses number 4/10


365

--> Performing set of coupled analyses number 5/10

f analysis points is

capacitance valuen the result table, orpa[1,1]) if a single

--

--14141515151515151515-


--> Performing set of coupled analyses number 6/10--> Performing set of coupled analyses number 7/10--> Performing set of coupled analyses number 8/10--> Performing set of coupled analyses number 9/10--> Performing set of coupled analyses number 10/10

At the end of the coupled effect evaluations, a summary oprinted.

If the capacitance relationship is requested, the mutualbetween first and second conductors (Capa[1,2]) is printed ithe capacitance between the conductor and the ground (Caconductor is modeled.

---------------------------------------------------Point Master DOF Reduced FMAG Capa[1,1]---------------------------------------------------1 -2.0000000e-06 -2.5765530e-09 1.2358000e-2 -1.6666667e-06 -1.8065974e-09 1.0862294e-3 -1.3333333e-06 -1.3646935e-09 9.7759145e-4 -1.0000000e-06 -1.0811644e-09 8.9370341e-5 -6.6666667e-07 -8.8548790e-10 8.2623515e-6 -3.3333333e-07 -7.4327955e-10 7.7036706e-7 4.2351647e-22 -6.3585629e-10 7.2307667e-8 3.3333333e-07 -5.5223359e-10 6.8235294e-9 6.6666667e-07 -4.8555243e-10 6.4679561e-10 1.0000000e-06 -4.3132108e-10 6.1539385e----------------------------------------------------


366

Once the numerical values of reduced forces and capacitance (if requested) havey estimation of the

the numerical value

and compared withbtain a relative data.

are called and as aectory. During this

jobname.s_db” files

our current workinge radical prefix youerent suffixes.


been approximated by an analytical expression, an accuracfitting process is performed on each fitted value.

This evaluation consists in comparing, at each fitting point, with the analytical expression.

A summary of the greatest absolute difference is also printedthe absolute mean value of the numerical values in order to o

[5] Generated files

In both cases, when running the algorithm, ANSYS solversconsequence, files are created in your current working dirstep, the ANSYS jobname remains unchanged.

While result files are created, “scratch”, “cmatrix.out” and “are generated.

Result files associated to the reduced model are created in ydirectory by adding the appropriate suffix to the output filentered. The following table provides the meaning of the diff

Suffix Description

.sub ANSYS substructure file


367

generated.

fix is the name youefix is specified. Itto model the Master The connection to a three nodes: input1,must be the applied master degree of

voltage reference in

ce output option isarts separated by an file prefix and the

TM

DLATM

PICE


[6] Behavioral model

��

When the SPICE output option is active, two .sp files can be

� The first .sp file is created by default. The file name preentered or the ANSYS jobname if no file radical prcontains a circuit of lumped elementary elements used Degree Of Freedom as a function of the applied voltage.global circuit of this model has to be performed throughoutput1 and 0. The signal connected to the input1 node voltage. The voltage at the ouput1 node models thefreedom behavior. The 0 node must be connected to thethe circuit.

� The second .sp file is generated only if the capacitantoggled to Yes. The file name prefix consists of two punderscore. The first part is identical to the previous

.hdla Reduced model, described in HDLA

_capa.hdla Capacitance relationship, described in H

.sp Reduced model, described in SPICE

_capa.sp Capacitance relationship, described in S


368

second part is the “capa” string. The connection to an external global circuitnly one difference:

odel case (output1), model (output1, ...,citance interaction

ap MEMS Modeler


is similar to the MDOF behavior connection. There is oinstead of having only one output node in the MDOF myou can have up to NM output nodes in the capacitanceoutputNM), NM being the number of mutual capacoefficients. In this release, NM=1.

The following provides an example of a capacitance output:

* Spice equivalent netlist generated by Memsc.param force_polynome0 = -1.538212e+10 .param force_polynome1 = -3.855341e+15 .param force_polynome2 = -1.216000e+20 .param force_polynome3 = 3.139320e+24 .param force_polynome4 = -2.171035e+29 .param m11 = 5.468008e-13 .param d11 = 0.000000e+00 .param k11 = 4.947165e-01 RK11 output_f1 0 ’1/k11’ C_output_f1 N11 N12 1 E_output_f1 N11 0 output_f1 0 1 V_output_f1 N12 0 0 Vdamp_output_f1 output_f1 N13 0 FD11 N13 0 V_output_f1 ’d11’ Hvel_output_f1 output_f1_dt 0 V_output_f1 1 L_output_f1 output_f1_d2t 0 1 Fvel_output_f1 0 output_f1_d2t V_output_f1 1GM11 output_f1 0 output_f1_d2t 0 ’m11’


369

Goutput_f1 0 output_f1 VALUE = {(v(input1)*v(input1))/((-ut_f1)+(-24)*v(output_f1)

)*v(output_f1))}

29)*v(output_f1)

)*v(output_f1))}


1.538212e+10)+(- 3.855341e+15)*v(outp1.216000e+20)*v(output_f1)*v(output_f1)+(3.139320e+*v(output_f1)*v(output_f1)+(-2.171035e+29)*v(output_f1)*v(output_f1)*v(output_f1Eoutput1 output1 0 VALUE = {1.0/((5.647164e+14)+(4.949925e+19)*v(output_f1)+(-1.915843e+24)*v(output_f1)*v(output_f1)+(2.133310e+*v(output_f1)*v(output_f1)+(-2.785264e+34)*v(output_f1)*v(output_f1)*v(output_f1

Reduced Order Modeling ROM Tutorial

370

M. (Reduced Order

s of freedom so thatan be prohibitivelyplifications or limit

ast solution during

with two differentd reduction of an

s

te element model inrometer model, thats clamped at their


ROM Tutorial

This tutorial aims at briefly explaining how to use the R.O.Modeling) tool.

Finite element models may involve a large number of degreefull simulation, especially in case of transient analyses, cexpensive. The aim of the R.O.M. tool is to make model simthe available results in order to obtain accurate, but fsimulations.

The following parts indicate how to perform a reductionexamples: condensation of an accelerometer model anelectrostatic-structural coupled system.

Condensation: Reduction with Single DOF & Load Case

Before using the R.O.M tool, you first have to provide a finiANSYS. For the following examples, use an inertial acceleconsists of a structural mass supported by four thin beamextremities, as shown in Figure 39.


371
Figure 39: ANSYS Graphics window


372

The first example is the most simple. A single load case is taken into account andgree of freedom.

hat example, all thecute them. This can

esh and boundaryd under the tutorial

and (see ANSYS


the accelerometer model is condensed in terms of a single de

Model Generation

First, provide a finite element model of your structure. In tinformation is gathered in two macros; you only have to exebe done using multiple tools.

All the information concerning the model (geometry, mconditions) is gathered in the file called accelman.mdl (locatedirectory).

� Copy accelman.mdl to your working directory.

� In the ANSYS Input window, enter the following commdocumentation, for further details):

*USE,accelman.mdl (Figure 40)



373

The accelerometer appears in the ANSYS Graphics EPLOT window (Figure 39).

f the model.

ontained in the file

irectory.

g the ANSYS *USE

igure 42). It allows


It is a 3D meshed view of the accelerometer.

The load case is an acceleration applied to the vertical axis o

The conditions corresponding to the chosen load case are ccalled accelman.load1 (located in the tutorial directory).

� Copy the following macro accelman.load1 to your working d

� Click the ANSYS Input window and execute the macro, usincommand:

*USE, accelman.load1


The applied acceleration is shown by an arrow on the triad (Fyou to verify the applied boundary conditions.


374

hich the model will

particular node that model descriptionelerometer top face.ment.

om by entering the


Figure 42: Arrow in the Z direction

Performing Reduction

You now have to define one or more degrees of freedom to wbe reduced.

In this example, you are interested in the model behavior at ahas a number given to the N_MASTER variable (see themacro: accelman.mdl). In fact, it is the center node of the accWe will use only one degree of freedom: the vertical displace

� Define this degree of freedom as a master degree of freedfollowing command in the ANSYS Input window:


375

M, N_MASTER,UZ.

selected degree of

SYS Main menu.



A symbol appears on the selected node to indicate the freedom.

� Select MEMSCAP tools > R.O.M Tools (Figure 44) in the AN


376


377

The R.O.M. Tools window appears and gives access to all the condensation

at(s) for which the


algorithms implemented in the MEMSCAP R.O.M. tool.

Figure 45: R.O.M Tools menu

Before performing the reduction, you must select the formreduced models will be generated.


378

� Click Output options.

r model in SPICE,

of the R.O.M. tool

LS, to work on the

).



The Output options dialog box allows you to save youHDLATM, or both languages.

As an example, the SPICE language is chosen.

� Click SPICE.

Now, you may run the condensation. The condensation partgives access to the Guyan-Irons reduction algorithm.

� In the R.O.M Tools menu, click Condensation > Current current load case.

The Condensation - Current LS window appears (Figure 47


379

box

ove dialog box asksample1’.

status progress barreover, informationabout the currently

**

**


Figure 47: Condensation - Current LS dialog

The algorithm applies the currently defined load case. The abyou to enter the output file name. For example, call it ’MyEx

Warning Be careful to enclose the output file name in single quotes.

� Click OK to run the algorithm.

During the execution of the algorithm, the ANSYS Processindicates to you which action the software is performing. Mois printed in the ANSYS Output window, informing you performed task and its results.

***************************************************Guyan-Irons condensation***************************************************Ansys substructure file = "MyExample1.sub"


380

Run substructuring with current load step

ing directory. Theythe selected format.

It is the ANSYS

ses

meter). It is more cases to the model,

elerations along the

middle of the prooftion in an unknown


-----------------------------------------Waiting for ANSYS solution ... DoneNumber of selected DOF = 1Number of load steps = 1********************************************* Reduced model successfully generated !******************************

After the execution, results files are created in your workcontain the behavioral model (reduced equation) written in In this case, the output file is MyExample1.sp.

Another file, called MyExample1.sub, has been created.substructure file.

Condensation: Reduction with Multiple DOFs & Load Ca

The second example uses the same model (the accelerocomplex than the first example. The aim is to apply three loadand select multiple degrees of freedom. The loads are accthree axes (X, Y and Z).

You will model the displacement of one node (located in themass) in the X, Y and Z directions resulting from an acceleradirection.


381
Figure 48: Model description


382

Model Generation

hat example, all thecute them. This can

esh and boundaryunder the tutorial

mand (see ANSYS


First, provide a finite element model of your structure. In tinformation is gathered in two macros; you only have to exebe done using multiple tools.

All the information concerning the model (geometry, mconditions) is in the file called “accelman.mdl” located directory.

� Copy accelman.mdl under your working directory.

� Click the ANSYS Input window and enter the following comdocumentation, for further details).

*USE, accelman.mdl



383

The following window appears:

w


Figure 50: ANSYS Graphics EPLOT windo


384

The ANSYS Graphics EPLOT window shows the 3D view of the accelerometer,

ntained in the macrot generates three LS

f them, loads the

YS. In this case, anthe triad.


and its mesh.

The conditions corresponding to the chosen load cases are cocalled accelman.load3 (located under the tutorial directory). Ifiles in the working directory.

� Copy accelman.load3 under your working directory.

� Click on the ANSYS Input window, and execute the macro.


The macro generates three load cases and, for each oconfiguration to a file.

After execution, the last load case remains defined in ANSacceleration in the Z direction is symbolized by an arrow on


385


hich the model will

particular node thate model descriptionelerometer top face.ents along the three

om by entering the

displacements in the of freedom using a


You now have to define one or more degrees of freedom to wbe reduced.

In this example, you are interested in the model behavior at ahas a number attributed to the N_MASTER variable (see thmacro, accelman.mdl). In fact, it is the center node of the accChoose three degrees of freedom, which are the displacemaxes.

� Define these degrees of freedom as master degrees of freedfollowing command in the ANSYS Input window.

M,N_MASTER,ALL


As the degrees of freedom associated with the nodes are the three directions of the space, you can select the three degreessingle command.


386

ALL means that you now consider all the degrees of freedom associated to the

ll the condensation

at(s) in which the


N_MASTER node.

A symbol is displayed on each selected degree of freedom.

� Click MEMSCAP Tools > R.O.M Tools.

The R.O.M. Tools window appears and gives access to aalgorithms implemented in the MEMSCAP Tools.




387

� Click Output options.

TM, SPICE or both

of the R.O.M. tool

on > From LS files



The Output options dialog box allows you to select HDLAlanguages for the results file.

In this example, the SPICE language is chosen.

� Click SPICE.

Now, you may run the condensation. The condensation partgives access to the Guyan-Irons reduction algorithm.

� As you are working with three load cases, click Condensatiin the R.O.M Tools menu.


388

les option

g box


Figure 55: Selecting the Condensation from LS fi

The Condensation - From LS files dialog box appears.

Figure 56: Condensation - From LS files dialo


389

� Set the output file radical prefix to ’MyExample3’.

e quotes.

ave been previouslyt ANSYS jobname,

rectory_name>.s01,me>.s03.

S Output window,results.


Warning Do not forget to enclose the output file radical prefix in singl

� Set the Ending LS file number to 3.

� The algorithm applies three load cases. These load cases hdefined in LS files. The name of these files are the currenfollowed by the number of the LS file.

The created LS files are called <working_di<working_directory_name>.s02 and <working_directory_na

� Click OK to run the algorithm.

During the execution, information is printed in the ANSYinforming you about the currently performed tasks and their

***************************************************Guyan-Irons condensation***************************************************

Ansys substructure file = "MyExample3.sub"

Run Substructuring with LS files-------------------------------


390

LS files FROM 1

ctory. They containcted format. In this


TO 3INC 1


Number of selected DOF = 3Number of load steps = 3

***************************************************Reduced model successfully generated !***************************************************

After execution, result files are created in your working direthe behavioral model (reduced equation), written in the selecase, the output file is MyExample3.sp.


391

The following figure gives an explanation of the model.

the number of Loadt directions for thef Master DOFs youf movement for the

and the number of


Figure 57: Model explanation

Load cases pins are input pins. You get as many input pins asSteps you defined (in this case 3, for 3 possible differenacceleration). You get as many output pins as the number odefined (in this case 3, for 3 possible different directions ospecified node (1))

There is no correlation between the number of output pinsinput pins.


392

Simulating a reduced model using the SPICE simulator

it using T-Spice.

> S-Edit.

indow (Figure 58).


Once you have created your SPICE model, you can simulate

� Launch S-Edit by selecting Programs > Tanner MEMS Pro

� Click File > Open and browse for the accel3.sdb file.

The schematic view of the accelerotor appears in the S-Edit w


393

ter


Figure 58: Shematic view of the accelerome

� Click Module > Open.

The Open Module window appears.


394

k OK.


Figure 59: Open Module window

� Choose Accelerometer_3by3 as the Module to Open and clic

The module appears in the S-Edit window.


395

y3 module


Figure 60: Schematic view of the Accelerometer_3b

� Click View > Schematic Mode.

� Click the T-Spice Command Tool (Figure 61).


396

rt of the window.


Figure 61: T-Spice Command Tool

The T-Spice Command Tool window appears.

� Left-click anywhere in the blank design sheet.

� Select Files > Include Files and click Browse in the right pa



397

w

) and click Open.

ation of the SPICEe tutorial directory.


Figure 62: T-Spice Command Tool windo

� Choose the previously created spice model (MyExample3.sp

If you did not follow the first part of the tutorial (genermodel), use our spice model named example3.sp located in th


398

� Click Insert Command.

is then instantiated


A T-Spice command line that loads the generated model within the schematic view of the module.

Figure 63: Viewing the command line


399

� Click View > Symbol Mode.

ibed in the model

ient_Accel_3by3 as


You can check that pin names match the names descrdescription.

� Click Module > Open and set accel3 as Files and TransModule to Open.

� Click OK.

The new module opens in the S-Edit window.

� Select Setup > Probing.

The Waveform Probing Setup dialog box appears.


400

box


Figure 64: Waveform Probing Setup dialog

� Click the Browse button and browse for the accel3.dat file.

� Click Open and then click OK.

� Click the T-Spice button.


401

An S-Edit warning message appears asking you whether you want to overwrite

ow (Figure 66).


the existing file.

Figure 65: S-Edit warning message

� Click Yes.

The netlist generated by S-Edit shows up in the T-Spice wind


402

Spice

n.


Figure 66: Viewing the generated netlist in T-

� Launch the simulation by clicking the Run Simulation butto

The Run Smulation dialog box appears.


403

utton.

ile.

the simulation.


Figure 67: Run Simulation dialog box

� Check the Do not show box and click the Start Simulation b

� Click Yes when asked if you want to overwrite the existing f

A Simulation Output window opens presenting the results of

� Click the Probe button.

Figure 68: Probe button


404

� Probe the Az node by clicking on it.

g the result of theshows the excitation


A W-Edit window opens. It contains the chart representinsimulation performed on the Az node (Figure 69). This chart results.


405

mulation


Figure 69: Viewing the results of the excitation si


406

� Access back the S-Edit window and probe for the Uz node.

Traces and unselect.

d view of the chart


A new chart appears in the W-Edit window.

� To view only the results of the last simulation, click Chart > the excitation chart in the right part of the Traces dialog box

� Then, select Chart > Expand Chart to obtain an expande(Figure 70).


407

lation


Figure 70: Viewing the results of the Uz simu


408

Reduction of Electrostatically Coupled Structural Systems

n algorithm for the this algorithm, theree of freedom.

YS a finite elementtructural behavior of

is the generation ofof an electrical and

micro mirror.

that behaves as a from the electricalhe structure and thender the plate and

only one part of thens applied to the


The electrostatic part of the R.O.M. tool gives access to areduction of electrostatically coupled structural system. Insystem can only be reduced in terms of a single structural deg

Before using the R.O.M. tool, you first have to load in ANSmodel and provide all the data related to both electrical and syour system.

The method used to provide a complete finite element modela common geometrical model and the separate description structural environment, using “Physics Files”.

In this example, use the model of an electrostatically actuated

It consists of a plate connected at one end to a square beamtorsional spring. The lower side of the plate is separatedground by an air gap. The electrostatic interaction between tground is assumed to be restrained to the space located uboundary effects are neglected. As the model is symmetric, structure is modeled and appropriate boundary conditiosymmetry plane.


409

escription

op plate

Plate

ground


Figure 71: Electrostatically actuated micro mirror d

T

Electrical

Bias voltage

Computed capacitancePlane of symetry (xz)

Torsianal beam

~


410

Model Generation

this example, run athis.

tes the model of theiles”.

f the model, and its


First, provide a finite element model of your structure. In macro. You can use other tools (the GUI, for example) to do

� Copy the following files to your working directory:

gen_esman.macro, esman.mdl, esman.elec, esman.str.

They are all located under the same tutorial directory:

� In the ANSYS Input window, execute the macro that generaelectrostatically actuated micro mirror and related “Physics F

*USE,gen_esman.macro


The ANSYS Graphics EPLOT window shows the 3D view omeshing (Figure 71).


411


h the model will be

particular node thate model description symmetry plane. Ins master degree of

lowing command in


You now have to define a single degree of freedom to whicreduced.

In this example, you are interested in the model behavior at ahas a number attributed to the N_MASTER variable (see thmacro). It is the node located at the end of the top face, in thethis example, you chose to use the vertical displacement afreedom.

� Set the degree of freedom to Master Dof by entering the folthe ANSYS Input window (Figure 73):

M,N_MASTER,UZ


� Click MEMSCAP Tools > R.O.M Tools.


412

The R.O.M. Tools menu appears (Figure 74).

plemented in the

at(s) in which the

s you to save your



It gives access to all the condensation algorithms imMEMSCAP tool.


� Click Output options

The Output options (Figure 75) dialog box appears. It allowresult file in HDLATM, SPICE or both languages.


413

.



In this example, the SPICE language is chosen.

� Click SPICE.

Now, you may start the reduction algorithm.

� Click the Single DOF button, under the electrostatic title.


414
Figure 76: Data dialog box


415

The above dialog box opens, prompting you to define data and algorithm controlsted, but you must

erate the results. In

accept the defaultyour generated files

the selected degreeld.

nodes respectivelynd” and the numberresent the electricalcal excitation.

the master degree ofues are the minimal


parameters. For some parameters, default values are suggecheck their compatibility with your own configuration.

� First, indicate the radical prefix of the file name used to genthis example, the name is “MyExample”.

� Under structure PHYSICS and electrostatic PHYSICS, parameters. These definitions must be in accordance with (see gen_esman.macro).

� Then, define the Electrical parameters.

In this example, the relationship between the capacitance andof freedom is modeled by selecting Yes in the appropriate fie

In this model, conductors are associated to components ofcalled “cond1” and “cond2”. Then, the conductor name is “coof conductors is 2. The “cond2” conductor is assumed to repground. The first conductor (“cond1”) is used to apply electri

You now have to define the algorithm parameters.

In this example, to generate the reduced model, assume that freedom varies between -2 microns and 1 micron. These valand maximal fitting values.


416

In this range, take 10 points, and the resulting polynomial is of the 4th order.

. They are advanced

on is printed in therithm status, results

and the summary of

****

****


The last two boxes keep their default values in this exampleparameters.

During the execution of the reduction algorithm, informatiANSYS Output window. The display is related to the algoand accuracy estimation.

The first information displayed is the title of the algorithm the data you entered in the previous dialog box.

***************************************************Electrostatic reduction (single degree of freedom)***************************************************

Structure PHYSICS:File = "structu.phy"Title = ""

Electrostatic PHYSICS:File = "electric.phy"Title = ""

Conductors name = "cond"Number of conductors = 2Ground key = 0Capacitance matrix dimension = 1Excitation component = "cond2"


417

The next display is related to the structural condensation algorithm. The name ofced values of mass,

e tuning procedure.model are printed,quencies and mass

epresentation of the


the ANSYS substructure file is printed as well as the redudamping and stiffness.

==============================Run structural substructuring==============================

Ansys substructure file = "tmp.sub"


Structural reduced parameters:

Stiffness(k) = 1.1646848e+00Mass (m) = 4.9866184e-12Damping (c) = 0.0000000e+00

Then comes the modal analysis and the frequency responsStructural eigen frequencies computed with the complete followed by a comparison between the estimated eigen frevalues.

The comparison of the values gives an indication on the rmode by the selected master degree of freedom.


418

===============================

09 % shift)

28 % shift)

or coupled effects


Run structural Modal analysis===============================


----------------------Mode Frequency---------------------- 1 7.6670774e+04----------------------

Tuning transient response:

Expected eigen frequency = 7.6670774e+04Approximated eigen frequency = 7.6916812e+04 (0.32Reduced mass = 4.9866184e-12Corrected mass = 5.0186740e-12 (0.64

The next output indicates the sweeping parameters fevaluation. A status is printed after each set of analyses.

=============================Perform coupled analyses=============================

Number of analyses = 10Degree of fitting = 4Minimum DOF value = -2.0000000e-06Maximum DOF value = 1.0000000e-06Reference bias voltage = 1.0000000e+00


419

--> Performing set of coupled analyses number 1/10

f analysis points is

nce value, between

--

--14141515151515151515-


--> Performing set of coupled analyses number 2/10--> Performing set of coupled analyses number 3/10--> Performing set of coupled analyses number 4/10--> Performing set of coupled analyses number 5/10--> Performing set of coupled analyses number 6/10--> Performing set of coupled analyses number 7/10--> Performing set of coupled analyses number 8/10--> Performing set of coupled analyses number 9/10--> Performing set of coupled analyses number 10/10

At the end of the coupled effect evaluations, a summary oprinted.

As a single conductor is modeled, there is only one capacitathis conductor and ground.

---------------------------------------------------Point Master DOF Reduced FMAG Capa[1,1]---------------------------------------------------1 -2.0000000e-06 -2.5765530e-09 1.2358000e-2 -1.6666667e-06 -1.8065974e-09 1.0862294e-3 -1.3333333e-06 -1.3646935e-09 9.7759145e-4 -1.0000000e-06 -1.0811644e-09 8.9370341e-5 -6.6666667e-07 -8.8548790e-10 8.2623515e-6 -3.3333333e-07 -7.4327955e-10 7.7036706e-7 4.2351647e-22 -6.3585629e-10 7.2307667e-8 3.3333333e-07 -5.5223359e-10 6.8235294e-9 6.6666667e-07 -4.8555243e-10 6.4679561e-10 1.0000000e-06 -4.3132108e-10 6.1539385e----------------------------------------------------


420

Once the numerical values of reduced forces and capacitance (if requested) havey estimation of the

int, of the numerical

and compared withbtain a relative data.

-----

-----

3

54

5-----


been approximated by an analytical expression, an accuracfitting process is performed on each fitted value.

This evaluation consists in the comparison, at each fitting povalue with the analytical expression.

A summary of the greatest absolute difference is also printedthe absolute mean value of the numerical values in order to o

=================================Process coupled analyses results=================================

FMAG accuracy estimation:

---------------------------------------------------Point Reference Approximation Difference---------------------------------------------------1 -2.5765530e-09-2.5766599e-09 1.0695196e-132 -1.8065974e-09-1.8064695e-09 -1.2799081e-13 -1.3646935e-09-1.3647061e-09 1.2506981e-144 -1.0811644e-09-1.0811986e-09 3.4230521e-145 -8.8548790e-10-8.8549709e-10 9.1917686e-156 -7.4327955e-10-7.4326989e-10 -9.6567069e-17 -6.3585629e-10-6.3584617e-10 -1.0119246e-18 -5.5223359e-10-5.5223378e-10 1.8783152e-169 -4.8555243e-10-4.8555978e-10 7.3576808e-1510 -4.3132108e-10-4.3131849e-10 -2.5912165e-1---------------------------------------------------


421

Mean absolute value = 1.0562739e-0921 %)

-----

-----

8

99

9-----

60 %)

********

********

ctory. They containse, the output file is


Maximum absolute difference = 1.2799081e-13 (0.01

Capa [1,1] accuracy estimation:

---------------------------------------------------Point Reference Approximation Difference---------------------------------------------------1 1.2358000e-14 1.2356427e-14 1.5729220e-182 1.0862294e-14 1.0865342e-14 -3.0473488e-13 9.7759145e-15 9.7753145e-15 5.9910553e-194 8.9370341e-15 8.9355797e-15 1.4543140e-185 8.2623515e-15 8.2619657e-15 3.8578644e-196 7.7036706e-15 7.7043433e-15 -6.7263844e-17 7.2307667e-15 7.2315074e-15 -7.4077217e-18 6.8235294e-15 6.8234690e-15 6.0393615e-209 6.4679561e-15 6.4672164e-15 7.3966534e-1910 6.1539385e-15 6.1542450e-15 -3.0649302e-1---------------------------------------------------

Mean aboslute value = 8.4575456e-15Maximum absolute difference = 3.0473488e-18 (0.03

***************************************************Reduced model successfully generated !***************************************************

After execution, results files are created in your working direthe behavioral model, written in the selected format. In this caMyExample.sp.


422

Simulating a reduced model using the SPICE simulator

it using T-Spice.

> S-Edit.

dit window (Figure


Once you have created your SPICE model, you can simulate

� Launch S-Edit by selecting Programs > Tanner MEMS Pro

� Click File > Open and browse for the MicroMirror.sdb file.

The schematic view of the micro mirror appears in the S-E77).


423

or


Figure 77: Shematic view of the micro mirr

� Click Module > Open.


424

The Open Module window appears .


Figure 78: Open Module window

� Choose MicroMirror and click OK.

� Click View > Schematic Mode.

� Click the T-Spice Command Tool.


425
Figure 79: T-Spice Command Tool

� Click somewhere in the blank window.



426

w

of the window.

) and click Open.


Figure 80: T-Spice Command Tool windo

� Left-click anywhere in the blank design sheet.

� Select Files > Include file and click Browse in the right part

� Choose the previously created SPICE model (MyExample.sp


427

If you did not follow the first part of the tutorial (generation of the spice model),ial directory.

is then instantiated

ribed in the modelame is 0.

d as such since theands to declare d11

device.

of the device with

es for MEMS: 1e-7


use our SPICE model named example.sp located in the tutor


A T-Spice command line that loads the generated model within the schematic view of the module.

� Click View > Symbol Mode.

You can check that the pin names match the names descdescription of the previous part. In this case, the ground pin n

We created the symbol view of the device. It can be re-usegenerated model uses a fixed template. We added some commas the damping parameter we want to sweep.

Now, you will study the influence of damping on the chosen

You will perform a step excitation and look at the responsevarious damping parameters.

You will sweep the damping parameter between typical valuto 1e-3 N.s.m-1.

� Select Module > Open.


428

� Choose SWEEP_Damping in the Open Module dialog box.

dule


The appropriate module appears in the S-Edit window.

Figure 81: Viewing the SWEEP_Damping mo


429

� Select Setup > Probing.

box

at file located in the


The Waveform Probing Setup dialog box appears.

Figure 82: Waveform Probing Setup dialog

� Click the Browse button and browse for the MicroMirror.dtutorial directory.


430

� Click Open and then click OK.

nt to overwrite the

.


� Click the T-Spice button.

An S-Edit warning appears asking you whether you waexisting file or not.

Figure 83: S-Edit warning

� Click Yes.

The netlist generated by S-Edit opens in the T-Spice window


431

n.


Figure 84: Viewing the generated netlist

� Launch the simulation by clicking the Run Simulation butto

The Run Simulation dialog box opens.


432

button.

ile.

displacement.

ears in the W-Edit


Figure 85: Run Simulation dialog

� Check the Do not Show box and click the Start Simulation

� Click Yes when asked if you want to overwrite the existing f

� Access back the S-Edit window and probe for the node called

The chart corresponding to the displacement results appwindow.


433

es


Figure 86: Viewing the 5 displacement valu

� In the W-Edit window, select Chart > Traces.


434

� Keep only the first and last traces (corresponding to the extreme values for the


damping coefficient) by unchecking the other boxes.

� Click OK.


435

Figure 87: Viewing the extreme values for the displacement


� You can now close S-Edit.

MEMScAP

436

437

439

453

454


10 Optimization Tutorial

��Introduction

��Setting up the Optimization

��Running the Optimization

��Examining the Output

Optimization Tutorial Introduction

437

. The MEMS Prostem to achieve its running iterative order to specify anptimization goal oration algorithms wed to determine if the

ed parameter valuesl. This allows fored while others aren the results of theC analyses will bes. Multiple analysese input file.

lking through somejust one parameter,


Introduction

Optimization is a critical tool for the MEMS engineeroptimization engine lets you tune the parameters of your sybest possible performance. Optimization is achieved bysimulations over a constrained set of selected parameters. Inoptimization, you must supply a list of parameters, the ogoals, and your choice among the analysis and the optimizprovide. Further, you decide which measurements will be useoptimization has been successful.

Once you have successfully run an optimization, the optimizcan be used in subsequent analyses of the same modeincremental optimization: some parameters can be optimizheld fixed; later, other parameters can be optimized based oearlier optimization. If multiple analyses are requested, Dperformed first, then AC analyses and then transient analyseof the same type are performed in the order they appear in th

The optimization process is most easily explained by waexamples. Our first example is a simple optimization with measure, analysis and goal.

Optimization Tutorial Introduction

438

ization on page 130


Note For more information on optimizing your design, see Optimof the T-Spice Pro User Guide.

Optimization Tutorial Setting up the Optimization

439

red the constructionher. The MEMS Pro parameter that willncy of 40 kHz.


Setting up the Optimization

If you recall the MEMS Pro Tutorial on page 14, we exploand behavior of a resonator. Here, we explore that model furtoptimizer will help you find the value of the springlengthmost closely achieve the optimization goal: a resonant freque

� Launch S-Edit by double-clicking the S-Edit icon .


440

� To open the tutorial, select File > Open and choose the file calledb.

it

the model.


<install directory>\Examples\optimize\resonator\reson.sdThe schematic appears in the S-Edit window (Figure 88).

Figure 88: Viewing the resonator in S-Ed

Now, we need to associate process and material properties to


441

� Select the Command Tool button to enter the Command tool mode, or, left-clickog (Figure 89).

g

e. Type process.sp


on the work area to invoke the T-Spice Command Tool dial

Figure 89: T-Spice Command Tool dialo

� In the left-hand tree, double-click Files and then Include filin the Include file field. Click Insert Command


442

The optimization engine needs to know what analysis we will use to determine

mmand Tool dialog

cies per decade to To to 100k (Figure


whether we have reached our optimization goal.

� Click somewhere in the work area to invoke the T-Spice Coagain.

� In the left-hand tree, double-click Analysis and then AC.

� Choose decade for Frequency sampling type, set Frequen500, Frequency range From to 10k and Frequency Range90).



443

el.

Tool dialog again.


Figure 90: Customizing the AC analysis

Next, we need to select the parameters of interest in our mod

� Left-click into the work area to invoke the T-Spice Command


444

� In the left tree, double-click Settings and then Parameters. Add the springlength, andert Command.

ers

e simulation.


springlength parameter statement. Set Parameter name toParameter value to 100e-6 (Figure 91). Click Add. Click Ins

Figure 91: Customizing the setting paramet

Now, we define the quantities that will be measured during th


445

� Left-click into the work area to invoke the T-Spice Command Tool dialog again.

nalysis type to AC the Measurementtton. Under When, value to 90. Fromer, select 1 (Figure

sure


� In the left tree, double-click Output and then Measure. Set Aand Measurement type to Find-when. Enter res_freq intoresult name field. Under Find, click the x-value radio buclick the Signal radio button, and enter vp(rtm). Set equalsthe drop-down menu next to on select crossing. For numb92). Click Insert Command.

Figure 92: Customizing the quantities to mea


446

Now that we have set up the model, we are ready to set up the optimization.

d Tool dialog.


� Left-click into the work area to invoke the T-Spice Comman

� In the left-hand tree, double-click Optimization (Figure 93).

Figure 93: Customizing the optimization


447

� Click Wizard in the left tree or the Wizard button on the right to bring up the

t First AC Analysis

tup


Optimization setup dialog.

� Enter opt1 in the Optimization name field and type or selecas the Analysis name (Figure 94).

Figure 94: Customizing the optimization se


448

� Click Continue to access the next dialog, Set optimization goals.

ck Add to add thesen you finish, the T-

als


� Set Measurement to res_freq and Target value to 40e3. Clivalues to the List of optimization goals (Figure 95). WheSpice Command tool dialog will look like the following:

Figure 95: Customizing the optimization go


449

Note that this target value will overwrite the one set earlier during the

s.

to 10e-6, Maximumvalue (Optional) tof parameters.


measurement setup.

� Click Continue to go to the next dialog, Set parameter limit

� Set the Parameter name to springlength, Minimum value value to 200e-6, Delta (Optional) to 0.25e-6, and Guess 100e-6 (Figure 96). Click Add to add the values to the List o


450

Figure 96: Customizing the parameters limits

gorithm.

the defaults (Figureog will look like the


� Click Continue to go to the next dialog, Set optimization al

� In the Name field, type optmod. For all other values, accept97). When you are finished, the T-Spice Command tool dialfollowing:


451

Figure 97: Customizing the optimization algorithm

yed in the dialog.ed to change a line,rrect, click Insert


� Click Continue to go to the next dialog, Insert command.

� The optimization commands you have created are displaReview your entries; make sure they are correct. If you neclick Back to make changes. If the commands are coCommand.


452

Figure 98: Finalizing the optimization customization


Optimization Tutorial Running the Optimization

453

aunch T-Spice with

tion.


Running the Optimization

� Clicking the T-Spice icon located in the toolbar will lthe exported netlist open.

� Run the optimization by selecting Simulation > Run Simula

Optimization Tutorial Examining the Output

454

of each simulationted for a given run)n at that parameterngth. The next linet measure and youre optimization; the

in the tolerance you parameter values:easurement result

ritten to the output

e appears below.

-3.73793 grad=3.73793

-0.640763


Examining the Output

The optimization engine output file contains the results iteration. The value of each optimization parameter (submitappears followed by the gradient of the objective functiovalue. In the example, we had just one parameter, springlecontains the residual, or the difference between the outpugoal. The Levenberg-Marquardt algorithm is used for thMarquardt value is an artifact of that algorithm.

Once the optimization engine produces a result that falls withhave set, it desists. The final parameter estimate, optimizedspringlength = 1.1775e-004 and the goal measure Msummary - OPTIMIZE=opt1 res_freq = 3.9922e+004 are wfile.

The output file for the optimization set up in our first exampl

Optimization parameters:springlength = 0.0001 derivative =Optimization initialization: resid=0.278656Marquardt=0.001Optimization parameters:springlength = 0.00011275 derivative =

OPTIMALVALUES


455

Optimization iteration 1: resid=0.067675 grad=0.640763

= -0.0522022

ad=0.0522022

-0.00137331

ad=0.00137331

ad=0.00137331

ad=0.00137331

ad=0.00137331

ad=0.00137331

ad=0.00137331


Marquardt=0.0005Optimization parameters: springlength = 0.00011725 derivative

Optimization iteration 2: resid=0.00669069 grMarquardt=0.00025

Optimization parameters: springlength = 0.0001175 derivative =








456

Optimization iteration 9: resid=0.00221041 grad=0.00137331

rad=0.00137331

= 0.00389856

rad=0.00389856

rad=0.00389856

0.00389856

rad=0.00389856


Marquardt=0.512

Optimization iteration 10: resid=0.00221041 gMarquardt=2.048

Optimization parameters: springlength = 0.00011775 derivative



Optimization parameters:springlength = 0.00011775 derivative =


Optimized parameter values: springlength = 1.1775e-004Measurement result summary - OPTIMIZE=opt1 res_freq = 3.9922e+004

MEMScAP

457

458

459

463

468

471


11 Verification

��Introduction

��Adding Connection Ports

��Extracting Layout

��Extracting Schematic for LVS

��Comparing Netlists

Verification Introduction

458

out by showing thearison. This chapterial is a continuation Tutorial.


Introduction

This chapter explains how to verify a mixed technology layprocesses of layout extraction and layout vs. schematic compcontains a tutorial on these important design steps. The tutorof the main MEMS Pro tutorial from Chapter 2 - MEMS Pro

Verification Adding Connection Ports

459

Chapter 2 - MEMS

File > Open to load

verlap, they will ben to work correctly,are called ports, andth the Port tool on a

jects on page 1-246, Guide.

tivity at a block orfor this design (thending pad) alreadyrt connections in theof type port.


Adding Connection Ports

We will begin the tutorial with the design you completed inPro Tutorial. Please, open it in L-Edit.

� Launch L-Edit by double clicking the L-Edit icon and selectthe design file we have provided you, reson.tdb.

As long as geometrical objects on the same layers touch or ofabricated as connected, however, for SPICE netlist extractiothe connection must be explicitly stated. These connections they define connectivity for a cell. Ports are objects drawn wilayer used specifically for interconnection.

Note For more information on connecting ports, see Drawing Oband Subcircuit Recongnition on page 3-73 of the L-Edit User

Ports allow L-Edit’s Extract command to recognize conneccircuit level. The cells that were generated automatically plate, comb-drive, folded spring, ground plate, and bohave properly drawn ports in place. You can examine the poexample Resonator by choosing Edit > Find to find objects


460

The location of ports in each of the layout cells is described and illustrated in

Bottom). They lookength of each of the

hey look like longd right sides of the

PL_Right


Figure 99.

� The plate has 4 ports (PL_Left, PL_Right, PL_Top, PL_like long rectangles (2 units thick) stretching across the lfour sides of the plate.

Figure 99: Ports of the plate element

� The comb-drive has 2 ports (C_Free, C_Fixed). Trectangles (2 units thick) stretching across the left anelement.

PL_Top

PL_Bottom

PL_Left


461

� The folded spring has 2 ports (FS_Free, FS_Fixed). FS_Free looks like a_Fixed looks like a

rlapping the anchor

s like a rectangle

D looks like a longof the pad. P_MTL

e of the pad.

eInst to the C_Free

he Layer Palette by from the top of thee layer name. Poly1.

the C_Free port of key down and drag

the C_Free port of


rectangle stretching across the bottom of the element. FSrectangle attached to the right side of the element ovepoint.

� The ground plate has 1 port (GP_GND). It lookoverlapping the entire ground plate.

� The bonding pad has 2 ports (P_GND, P_MTL). P_GNrectangle (2 units thick) stretching across the left side looks like a long rectangle stretching across the right sid

Begin by connecting he PL_Left and PL_Right ports of Platports of CombLeft and CombRight.

� Choose the Box tool and select the Poly1 layer from tclicking it. Poly1 should be the first item in the fourth rowLayer Palette. As you cover Poly1, the tool tip will read thwill also appear in the list box at the top of the Layer Palette

� Draw a box covering the PL_Right port of PlateInst and CombRight. Click once to set the lower left corner, hold theto the opposite corner, and release.

� Draw a box covering the PL_Left port of PlateInst and CombLeft.


462

We will now connect the PL_Top and PL_Bottom ports of PlateInst to the

on Poly1 coveringeInst.

g a box on Poly1L_Bottom port of

d SpringBottom to

te by drawing a boxPlateInst. This box

it⁄Extract.


FS_Free ports of SpringTop and SpringBottom.

� Connect the top folded spring to the plate by drawing a boxthe FS_Free port of SpringTop and the PL_Top port of Plat

� Connect the bottom folded spring to the plate by drawincovering the FS_Free port of SpringBottom and the PPlateInst.

Finally, we will connect the FS_Free ports of SpringTop anthe GP_GND port of GroundPlateInst.

� Connect the ports of the two folded springs to the ground plaon the Poly0 layer covering the GP_GND port of Groundshould cover all of GroundPlateInst.

Now all the connections will be properly recognized by L-Ed

Verification Extracting Layout

463

ice and connectivity(LVS) or SPICE

layout conforms to the layout actuallymining whether the

Pro feature calledof subcircuit cells as

3-73 and Extracting

ox.

nology informationand devices to be


Extracting Layout

Layout extraction produces a SPICE netlist consisting of devinformation used for comparing layout vs. schematic simulations. Design rule checking (DRC) ensures that a fabrication process requirements, but it does not verify thatimplements what was intended; nor does it assist in detersystem will perform to your specifications.

Extracting MEMS designs involves the use of the MEMSsubcircuit extract. Subcircuit extract involves the extraction “black boxes” with connection ports and cell properties.

Note For more information see Subcircuit Recognition on page Layout on page 3-48 of the L-Edit User Guide.

� Select Tools > Extract to invoke the Extract tabbed dialog b

An extract definition file must be loaded to provide techabout your design. It contains a list of the connections extracted.


464

� Click the Browse button and use the windows browser to select mumps.extt name.

file


from the tutorial directory and enter Layout.spc as the outpu

Figure 100: Selecting the extract definition


465

� Click the Subcircuit tab.

g box

uncheck the Flag


Figure 101: Subcircuit tab of the Extract dialo

� Check the Recognize Subcircuit Instances checkbox.

� Select SubCktID as the Subcircuit Recognition Layer,Improper Overlaps checkbox.


466

� Click the Run button to begin the layout extraction.

ut will not run thepc will be created.

ces extracted, their. The netlist file cant versus schematic

ll button.

dialog box, changec from the file list,ng the file. Examine


Note that clicking OK will save the setup information bextraction. After clicking Run, a netlist file called Layout.sThis is a text file in SPICE format containing the deviconnectivity, and device geometrical parameter informationbe used to run T-Spice simulations or to perform layouverification (LVS).

� When the L-Edit Warning dialog appears, click the Ignore A

� Open the Layout.spc file selecting File > Open. In the Openthe File Type to Spice Files (*.sp, *.spc), select Layout.spand click OK. A text window is brought up in L-Edit containithe extracted file by using the scroll bar on the text window.


467

Figure 102: Viewing the extracted file


� Select File > Exit to exit L-Edit.

Verification Extracting Schematic for LVS

468

ust contain only theommands. You will


Extracting Schematic for LVS

To export a schematic netlist for use in LVS, the schematic mdevice components and be free of all stimuli and simulation cnow re-open the tutorial file.

� Open S-Edit.

� Select File > Open to open the reson.sdb file.


469

� Select Module > Open to open the SchemLVS module.

or


Figure 103: Schematic view of the resonat

� Select File > Export to invoke the Export Netlist dialog.


470

� In the Export Netlist dialog, choose Pin number order for the Netlist Port. Click OK.

ction, and create anIn this case, the fileormat that containsameter information.ematic verification


Order and uncheck the Enable waveform probing checkbox

Figure 104: Export Netlist dialog

Clicking OK will save the setup information, run the extraoutput netlist file that is preloaded with the module name. name will be SchemLVS.sp. This is a text file in SPICE fdevice descriptions, their connectivity, and geometrical parThe netlist file can be used to perform layout versus sch(LVS).

� Select File > Exit to exit S-Edit.

Verification Comparing Netlists

471

mparing the layoutstem. This is layoutwo netlists — one

l directory. The fileou created.


Comparing Netlists

An important step in the MEMS design process involves coand the schematic to ensure that they describe the same syversus schematic comparison, performed by comparing tderived from the layout and one from the schematic.

� Double-click the LVS icon to launch LVS.

� Select File > Open to open the reson.vdb file in the tutoriacontains predefined parameters to compare the SPICE files y


472

Figure 105: Viewing the preset parameters of the reson.vdb file

he comparison. The

ated from the layout


� Click the Run button located on the toolbar to launch tverification window will appear displaying the results.

Figure 106: Verification window

The netlist generated from the schematic and the netlist generare identical.

� Select File > Exit to exit LVS.


473

parison on page 3-t User Guide.


Note For more information on netlist comparison, see Netlist Com139 and Resolving Discrepancies on page 3-157 of the L-Edi

MEMScAP

474

475

477

479


12 Command Tool

��Introduction

��Accessing the Command Tool

��Command Tool Dialog

Command Tool Introduction

475

ntering device andns in SPICE syntax.dit.

lly correct SPICE in output property

ammatically correctn on accessing then page 168 of the

E commands whichis simplifies the taskr parameter sweepsithin the schematic


Introduction

The Command Tool provides a graphical interface for emodel statements, simulation stimuli, commands, and optioThe Command Tool is accessible from both T-Spice and S-E

In S-Edit, the Command Tool forms the grammaticacommands for use in Schematic mode, Symbol mode orstrings.

In T-Spice, the Command Tool can also be used to insert grSPICE commands into your netlist. For more informatioCommand Tool in T-Spice see Simulation Commands oT-Spice User Guide and Reference.

Usage in S-Edit

Schematic Mode

In Schematic mode, the Command Tool is used to add SPICcan be passed, via netlist export, to the T-Spice simulator. Thof entering complex simulation commands such as those foand optimization. It also allows the user to maintain, wdatabase, symbols, schematics, and simulation parameters.

Command Tool Introduction

476

Symbol Mode

associate a SPICEesigners who might

bol.

ary property for usety is not limited to


In Symbol mode, the Command Tool can be used to command with a symbol. This capability is of use to library dwant to associate an often used SPICE command with a sym

Property Creation

The Command Tool can be used to set the value of an arbitrin a schematic symbol. With this use, the name of properSPICE OUTPUT.

Command Tool Accessing the Command Tool

477

ated by clicking theOnce the button is

y clicking any of the

s a cross-hair as it ise will invoke the T-

Command Tool


Accessing the Command Tool

Schematic Tools Toolbar

In the Schematic mode of S-Edit, the Command Tool is activCommand Tool button on the Schematic Tools toolbar. clicked, it remains depressed until another tool is activated bother buttons on the same toolbar.

When the Command tool is active, the mouse cursor becomedragged over the work space. A left-click on the work spacSpice Command Tool dialog.

Command Tool Accessing the Command Tool

478

Module Menu

also be activated by

Module Menu

ce Command Tool


In the Schematic mode of S-Edit, the Command Tool may selecting Module > Command Tool.

Figure 107: Selecting the Command Tool Option of the

Selecting Module > Command Tool will invoke the T-Spidialog.

Command Tool Command Tool Dialog

479

ice Command Tool

g

ommand categories.us sign next to themmands. The right

ding to the selected


Command Tool Dialog

The graphical interface for the Command Tool is the T-Spdialog (Figure 108).

Figure 108: T-Spice Command Tool dialo

The left side of the dialog displays a hierarchical list of cDouble-clicking on a category (or clicking the plus or mincategory name) expands or collapses the list of specific coside of the dialog displays the list of commands correspon


480

category. When a specific command is highlighted on the left side, or a commandhe right side of the the command. The for the command

log for a transientign in front of theing Transient. Thehe right side of theons have been filled

sis


is selected from the command list on the right hand side, tdialog contains a field for each of the variables required byT-Spice command is generated from your dialog entryvariables.

The following example is a T-Spice Command Tool diaanalysis (Figure 109). This is done by clicking the plus sAnalysis category to expand the command list and selectcommand options dialog will replace the category list on tdialog. In the example, the transient analysis command optiin.

Figure 109: Customizing the transient analy


481

Once the command parameters are set, clicking the Insert Command button will schematic object is


create a grammatically correct SPICE command string and acreated that contains the SPICE command string.

Command Tool Schematic Object Creation

482

CE command stringnd Tool dialog box.scribed in Templatersor location if ther or at the origin ofd from the Modulemand Tool dialog

of the new instance.

ibrary and is named the current designthe module to use as a SPICE OUTPUT

ymbol page with the


Schematic Object Creation

As described in Command Tool Dialog on page 479, a SPIwill be formulated from your entries to the T-Spice CommaIn the Schematic mode, an instance of a template module, deModule on page 482, will be created and placed at the cuCommand Tool was accessed from the Schematic Toolbathe schematic window if the Command Tool was accessemenu. The command you specified using the T-Spice Comwill be inserted as the Value of the SPICE OUTPUT property

Template Module

The template module is provided as a part of the schematic lTSPICE COMMAND. If this module does not exist withinspace, a browse dialog will prompt you to enter the name of the template. If the chosen template module does not containproperty, one will be created and placed at the origin of the sValue set to ““.

Command Tool Symbol Mode

483

l is similar for bothSchematic mode, an mode, a property is

Tool button on the

odule > Command

CE command stringd a property namedhe cursor location ifar or at the origin ife Text Size is set toone. The Value ofmand Tool dialog.

by the formulated


Symbol Mode

The method of access and the result of the Command TooSchematic and Symbol modes. The exception is that in the instance is created as the schematic object and in the Symbolcreated instead.

The Command Tool is activated by clicking the CommandSchematic Tools toolbar as before.

The Command Tool may also be accessed by selecting MTool.

Schematic Object in Symbol Mode

As described in Command Tool Dialog on page 479, a SPIwill be formulated from your entries to the dialog box anSPICE OUTPUT of type Text will be created and placed at tthe Command Tool was accessed from the Schematic Toolbthe Command Tool was accessed from the Module menu. Ththe Default Port Text Size and the Show Format is set to Nthis property is defined by your entry into the T-Spice ComAny existing entry in the Value field will be overwrittencommand string.


484

If the SPICE OUTPUT property already exists, an error message will be

he Command Toolthe Properties toole Schematic Toolsntil another tool is toolbar. When the

cross-hair. Clickingty dialog.

CommandTool


displayed and the operation will be terminated.

Create Property Dialog

In the symbol view mode of S-Edit, you may also access twhile creating a new property. To create a new property, must be activated by clicking the Properties button on thtoolbar. Once the button is clicked, it remains depressed uactivated by clicking any of the other buttons on the sameProperties tool is active, the mouse cursor becomes a somewhere in the work space will invoke the Create Proper

Figure 110: Create Property dialog

Tool Tip


485

Pressing the Command Tool button in the Create Property dialog will invoke

CE command stringwill be inserted into OK will create a


the T-Spice Command Tool dialog.

As described in Command Tool Dialog on page 479, a SPIwill be formulated from your entries to the dialog box and it the Value field, replacing the previous content. Clickingproperty placed at the cursor location.

MEMScAP

486

e

e and Route (BPR)

ed means of placingntain the layout of converters, and soividual blocks, and

es and connect them

488

499


13 Block Place and RoutTutorial

This tutorial demonstrates some key steps in the Block Placdesign flow for use with MEMS.

BPR assists in the design of systems by providing an automatand routing the blocks that compose them. Blocks may coMEMS sensors, amplifiers, demodulators, oscillators, A-Dforth. BPR enables you to focus on the design issues of indwhen those designs are functional, helps you gather the piec

��Initializing the Design

��Routing the Design

Block Place and Route Tutorial

487

in the configuration you desire. Some features of BPR, including timing analysis, you optimize your

ation, initialization,sis, signal integrity

L-Edit User Guides and terminology, demonstrates BPRetlist navigator, and

that compose a Q-MS linear resonatortor, and a capacitor.

ples\Bpr. The firstte your own tutorialonstrate automatic


signal integrity analysis, and layout verification will helpentire design to an overall system performance goal.

The BPR process consists of four stages: design preparplacement, and routing. Optional steps include timing analyanalysis and layout verification.

Placing and Routing Block Designs on page 2-144 of thegives a detailed description of the BPR design procesincluding a tutorial based on a CMOS adder circuit thatinitialization, routing, moving vias and routing wires, the nassisted manual routing.

In this tutorial, you will be placing and routing the blockscontrolled resonator system. This system consists of a MEand interface circuitry that includes several transistors, a resis

Two example files are located at <install directory>\Examfile, mems.tbd, is a source for setup information as you creafile. The second file, mems_placed.tbd, is used to demrouting.

Block Place and Route Tutorial Initializing the Design

488

ells in the design ins routing guides.

d for connectivity be present in your

. You will add cell


Initializing the Design

During BPR initialization, L-Edit reads a netlist, places the ca special top-level BPR cell, and displays their connectivity a

You must first specify the netlist that L-Edit will reainformation. All the cells appearing within the netlist mustdesign file.

In this part of the tutorial you will:

� Use the design navigator to copy cells into a design

� Enter initialization values

� Set a top-level BPR cell

� Launch L-Edit.

L-Edit opens with Cell0 of a new empty file called Layout1information to Layout1 as part of the initialization process.


489

� Select File > Replace Setup.

log

be checked, thesermation that will be


Figure 111: Replace Setup Information dia

All the boxes to import values from your design shoulddescribe the palette, application, design, and layer setup infoincorporated into the Layout1 file.


490

� Browse to <install directory>\Examples\Bpr and select the file mems.tdb.

e setup information

ory>\Examples\Bpr

d in the netlist mustt you will need for


� Click OK to close the Replace Setup Information dialog. Thhas been transferred to your file.

� Use File > Save to save your file in the <install directsubdirectory as tutorial.tdb.

Figure 112: Saving the setup information

In order to initialize a design for BPR, all the cells referenceexist in the active layout file. You will copy the cells tha


491

initialization into the tutorial.tdb file using L-Edit’s Design Navigator. The design, and allows

r for tutorial.tdb.


Design Navigator lists all the cells included within a singleyou to browse among them.

� Use View > Design Navigator to open the Design Navigato


492

� Use File > Open to open the mems.tdb file in theign Navigator for

gn navigator

mssignvigator


<install directory>\Examples\Bpr subdirectory. The Desmems.tdb should appear.

Figure 113: Tutorial design navigator and mems desi

tutorial design navigator me

dena


493

� From the mems.tdb file’s Design Navigator, select the Capacitor and drag and

nother

_500_2, P_100_2,.


drop it into the tutorial.tdb file’s Design Navigator.

Figure 114: Copying cells from a database to a

� Likewise, drag and drop the cells N_100_2, N_400_2, NP_800_2, pad, resistor, resonator, and Via into tutorial.tdb


494

ically copied.

sistors, two PMOS

button on the upper


Warning Do not copy the main cell.

Note Since the Spring is referenced by the resonator, it is automat

� The cells you copied include a capacitor, three NMOS trantransistors, a pad, a resistor, a resonator, and a via.

� Use Ctrl+S to save your tutorial.tdb file.

� Close both Design Navigator windows by clicking the right corner of the windows.


495

� Use Cell > New to create a cell for use during initialization. Enter top-level in the

level should now be

ion dialog.


New cell name field.

Figure 115: Create New Cell dialog

� Click OK to close the Create New Cell dialog. The cell top-the active cell.

� Use Tools > BPR > Initialization to open the BPR Initializat


496

In the BPR Initialization dialog, you will enter a netlist, assign the default signalick a routing guide

ory>\Examples\Bprfirm that the BPR Select Signal as the the Routing guidee.


type, specify a top-level I/O cell, set a routing pitch and player.

Figure 116: BPR Initialization dialog

� In the Netlist file group, browse to the <install directsubdirectory and select the memsdemo.tpr netlist. ConInitialization of cell top-level fields appear as shown above.Default Signal Type. Select Connectivity from the layers inlayer pull-down list. Enter a routing pitch of 7. Click Initializ


497

� Maximize the active window and press the Home key to center the image. The

sign


initialized design should look like the following:

Figure 117: Layout view of the initialized de

� Save and close the tutorial.tdb file.


498

You’ve successfully initialized your BPR cell. BPR has placed the blocks listedf routing guides forove the blocks.


in the netlist file. The connectivity is displayed as a network opin-to-pin connections, and will update interactively as you m

Block Place and Route Tutorial Routing the Design

499

ve and connect therial, we demonstrate

set of selected nets.ets when you need

you want to reducesor and its interface

select keep-out anddefine any excluded


Routing the Design

After initialization, you can manually or automatically moblocks in your design to the positions you desire. In this tutoautomatic routing of a placed file (mems_placed.tdb).

The autorouter can route all the nets in a design or a restrictedAssisted manual routing tools are useful for hand-routing nmore control over their exact placement; for example, whenparasitic capacitances and resistances around a MEMS sencircuitry.

In this portion of the tutorial, you will:

� Define routing layers and via cells, set wire widths, subcircuit recognition layers, set the routing pitch, and signals

� Use the automatic router to route an entire design


500

� Use File > Open to open the mems_placed.tdb file in the the window andbelow.

db file


<install directory>\Examples\Bpr subdirectory. Maximizepress the Home key so the design fills the window as shown

Figure 118: Layout view of the mems_placed.t


501

� Use Tools > BPR > Setup to confirm that the General tab fields are set as below.uld be checked.

alog


Route selection type should be set to Net, and the boxes sho

Figure 119: General tab of the BPR Setup di


502

� Select the Autorouter tab to confirm that fields in that tab of BPR Setup are set

dialog


as shown below.

Figure 120: Autorouter tab of the BPR Setup


503

� Click OK to close the BPR Setup dialog.

in the design.

when the router hasouted, no nets were

dialog


� Use Tools > BPR > Route All to automatically route all nets

� The following BPR - Automatic Routing Report appears completed its attempt. Note that 11 nets were completely rpartially routed or not routed at all.

Figure 121: BPR - Automatic Routing Report

� Click OK to close the routing report.


504

The routed design should look like the figure below. You have successfully

gn


completed the BPR tutorial.

Figure 122: Layout view of the routed desi


505

You may continue experimenting with BPR by removing the routed connectionsks around, and then


of the design (Tools > BPR > Unroute All), moving the blocrouting again.

MEMScAP

506

Library

507

508

511

514


14 Extending the MEMS

��Introduction

��Schematic Symbols

��SPICE Models

��Layout Generators

Extending the MEMS Library Introduction

507

ements, also calledhese building blocks of the MEMS Provailable the widestces. However, theLib to completely

is to construct those

rary can be easilyo the MEMS library


Introduction

The MEMS library (MEMSLib) contains a variety of elprimitives, that can be combined to create MEMS devices. Tare listed in the chapter MEMSLib Reference on page 280User Guide. MEMSLib is continually updated to make apossible selection of parts for generating MEMS devipossibilities of MEMS design are too broad for MEMSrepresent all components of all possible devices. Our prioritycomponents most often required for MEMS design.

A powerful feature of MEMS Pro is that our design libextended. We outline the process for adding new elements tin this chapter.

Extending the MEMS Library Schematic Symbols

508

mands, all of whichnce.

e schematic symbolsign. To understandl from our existing

al directory (Figure


Schematic Symbols

Note We frequently refer to S-Edit concepts, operations, and comare more fully described in the S-Edit User Guide and Refere

This section offers step-by-step instructions for creating ththat you will use to reference the MEMS element you will dehow you will produce the symbol, let’s look at a symbolibrary.

� Double-click the S-Edit icon to launch S-Edit.

� Select File > Open. Open the reson.sdb file in the tutori123).

� Select Module > Open. Select module Plate4.


509

r

ng the element, itsacross the bottom ofist.

rties


Figure 123: Symbolic view of the resonato

Plate4 is composed of three parts: the symbol representiproperties, and ports. The SPICE OUTPUT property (shown the S-Edit window) is essential for exporting to a SPICE netl

Symbol

Prope

Ports


510

Perform the following steps to create a new symbol:

ol.

ing View > Symbol

ool.

ur symbol.


� Select Module > New.

� In the Module Name field, enter the name of your new symb

� Ensure that the current view is in symbol mode by selectMode.

� Draw your symbol with the Annotation tools.

� Place input and output ports on your symbols with the Port t

� Add properties to your symbol with the Properties tool.

� Switch to Schematic mode to complete the schematic for yo

Extending the MEMS Library SPICE Models

511

mands, all of whichrence.

. SPICE can also berical system can beers instructions for.

l variables and theor in the mechanicalge.

tion. The subcircuit electrical primitive

as you intended.


SPICE Models

Note We frequently refer to T-Spice concepts, operations, and comare more fully described in the T-Spice User Guide and Refe

SPICE can, of course, be used to simulate electrical circuitsused to simulate multiple domain systems if the non-electcharacterized by differential equations. This section offcreating a behavioral model under a multiple domain system

� Find the appropriate mapping between SPICE’s electricavariables in the other domain. For example, to model behavidomain, force can be mapped to current and position to volta

� Find the differential equation that best describes the element.

� Create a subcircuit model that captures the differential equamay contain external functional models and/or a network ofcomponents.

� Test your model. Verify that you have captured the behavior


512

Application Example

d by a network of

ical equation I = k*Vetry of the spring.nction of the spring

ents force F, and V

k

2k

e described in termsntrolled source that


A simple, one-dimensional linear spring may be modeleelectrical primitives:

� Map force to current and position to voltage.

� The mechanical equation F = k*x can be mapped to the electrwhere the spring constant, k, is a function of the geomElectrically, the element is a resistor whose resistance is a fugeometry.

� Mapped to the electrical domain, k becomes 1/R, I represrepresents position x. Therefore, the subcircuit model is:

.subckt LinearSpring n1e n2e n1m n2m k=1 Re=1Rmech n1m n2m ‘1/k’Relect n1e n2e ‘Re’.ends

To use this model in a SPICE file, reference it by:

Xspring n1e n2e n1m n2m LinearSpring k=.5 Re=

The external model feature can model behavior that cannot bof electrical primitives, for instance, the behavior of a codepends on arbitrary functions of state variables.


513

pter entitled User-ide and Reference.


Note The External Model feature is fully described in the chaDefined External Model on page 634 of the T-Spice User Gu

Extending the MEMS Library Layout Generators

514

mands, all of whichdetailed informationon page 4-10 of the

instructions in the layout generator.

he Poly1 layer fromts length and width.an also be found in


Layout Generators

Note We frequently refer to L-Edit concepts, operations, and comare more fully described in the L-Edit User Guide. For more on writing UPI code, see Programming the User Interface L-Edit User Guide.

To learn how to create a new layout generator, follow theL-Edit ⁄ UPI On-Line Tutorial. Here, we describe an existing

Sample Layout Generator

The following code generates a rectangular plate drawn on tvalues supplied by the user. The plate is parameterized by iThe macro is bound to the F1 hot key. This source code c<install directory>\Examples\lupi\plate.c.

#include <stdlib.h>#include <string.h>#include "ldata.h"#include "lupi_usr.h"

struct Plate_Struct {


515

char name[20];

ct *Structure

);

, PLATE",

return;

ct *Structure


char instname[20];int width;int length;

};

int Get_Parameters_Plate ( struct Plate_Stru);

int Create_Plate ( struct Plate_Struct platevoid Generate_Plate ( void );

int UPI_Entry_Point( void ) {

LMacro_BindToHotKey ( KEY_F1, "Generate"Generate_Plate" );

return 1;}

void Generate_Plate ( void ) {

struct Plate_Struct Plate;

if ( !Get_Parameters_Plate ( &Plate ) )if ( !Create_Plate ( Plate ) ) return;return;

}

int Get_Parameters_Plate ( struct Plate_Stru)


516

{

},

}};e Parameters",

0].value );1].value );[2].value );

)

le ( ); (

File_Now,

ition ( );

{


LDialogItem Dialog_Items [ 3 ] = { { "name", "name" { "width", "200" },{ "length", "100 "

if ( !LDialog_MultiLineInputBox ( "PlatDialog_Items, 3 ) )

return 0;

strcpy ( Structure->name, Dialog_Items[Structure->width = atoi ( Dialog_Items[Structure->length = atoi ( Dialog_Itemsreturn 1;

}

int Create_Plate ( struct Plate_Struct plate{

LCell Cell_Original = LCell_GetVisibLFile File_Now = LCell_GetFile

Cell_Original );LLayer Layer_Poly1 = LLayer_Find (

"Poly1" );LPoint Point_Cursor = LCursor_GetPosLCell Cell_Now;LTransform Plate_Xform;LInstance Plate_Inst;LMagnification NoMag;if ( LCell_Find(File_Now, plate.name) )


517

LDialog_AlertBox( "Cell with that name exists!

ame );

.width);

l */

or.x, ;l, Cell_Now, 0,0));_Inst,


EXITING!" );return 0;

}

Cell_Now = LCell_New( File_Now, plate.n

/* draw the plate */LBox_New ( Cell_Now, Layer_Poly1,

0, 0, plate.length, plate

/* instance plate cell into current celNoMag.num = (LLen) 1;NoMag.denom = NoMag.num;Plate_Xform = LTransform_Set(Point_Curs

Point_Cursor.y, LNormalOrientation, NoMag)Plate_Inst = LInstance_New(Cell_Origina

Plate_Xform, LPoint_Set(1,1) , LPoint_Set(LInstance_SetName( Cell_Original, Plate

plate.instname );LCell_MakeVisible(Cell_Original);return 1;

}

MEMScAP

518

519

524

532

560

578

601


15 MEMSLib Reference

��Introduction

��Using the MEMS Library

��Active Elements

��Passive Elements

��Test Elements

��Resonator Elements

MEMSLib Reference Introduction

519

MEMS devices cano SPICE capability,out generation part

ser interface to theEL) developed at

ated based on someut generator macro.chined process with connect layers. Themation can be foundns are created using Simulations resultssing the waveform elements appear in

and parameter lists. The corresponding box, and illustratedry example cell for


Introduction

MEMSLib provides a library of components from which fullbe built. The library provides schematic symbols, export tSPICE models and parameterized layout generators. The layof this library is largely based on creating a graphical uConsolidated Micromechanical Elements Library (CaMMCNC.

The layouts for the library elements are automatically generuser input parameters using the MEMS parameterized layoThe layout generators assume a two-layer surface micromatwo structural layers, two sacrificial layers, and two electricaldefault technology setting is for MUMPS. Macro usage inforin MEMSLib Layout Macros on page 257. Schematic desigMEMSLib by instantiating the MEMSLib symbol modules.can be viewed directly from the schematic they model uprobing feature. Further instruction on usage of the libraryUsing the MEMS Library on page 524 of this chapter.

This library reference provides descriptions, file locations, (including default parameter values) for each library elementlayout palette button, the L-Edit/UPI parameter input dialoggeometry for each element are also shown. The layout libraeach element was generated using default parameter values.


520

Ele

Lib

Act

S_L _2) on page 532

S_L

S_R , S_RCOMBU_2) on page

S_R 1, S_RCOMBUA_2) on

S_R BD_2) on page 546

S_R

S_R

S_H 7

Pas

S_J

S_J


ment Description

rary Accessing the MEMS Library Palette on page 526

ive Elements

COMB Linear Electrostatic Comb Drive Elements (S_LCOMB_1, S_LCOMB

SDM Linear Side Drive Elements (S_LSDM_1, S_LSDM_2)) on page 535

COMBU Unidirectional Rotary Comb Drive Elements - Type 1 (S_RCOMBU_1538

COMBUA Unidirectional Rotary Comb Drive Elements - Type 2 (S_RCOMBUA_page 542

COMBD Bidirectional Rotary Comb Drive Elements (S_RCOMBD_1, S_RCOM

CDM Rotary Comb Drive Elements (S_RCDM_1, S_RCDM_2) on page 550

SDM Rotary Side Drive Elements (S_RSDM_1, S_RSDM_2) on page 554

SDM Harmonic Side Drive Elements (S_HSDM_1, S_HSDM_2) on page 55

sive Elements

BEARG_1 Journal Bearing Elements 1 (S_JBEARG_1) on page 560

BEARG_2 Journal Bearing Elements 2 (S_JBEARG_2) on page 563


521

S_L 2) on page 566

S_L B_2) on page 569

S_L page 572

S_S 2) on page 575

Tes

S_A _1) on page 578

S_C 1

S_C 4

S_E _EUBEAM_2) on page 587

S_E on page 590

S_G on page 593

S_G

S_P

Res

S_P

S_L

Element Description


CLS Linear Crab Leg Suspension Elements - Type 1 (S_LCLS_1, S_LCLS_

CLSB Linear Crab Leg Suspension Elements - Type 2 (S_LCLSB_1, S_LCLS

FBS Linear Folded Beam Suspension Elements (S_LFBS_1, S_LFBS_2) on

PIRAL Dual Archimedean Spiral Spring Elements (S_SPIRAL_1, S_SPIRAL_

t Elements

PTEST Area-Perimeter Dielectric Isolation Test Structure Element (S_APTEST

OTEST_1 Crossover Test Structure Element - Type 1 (S_COTEST_1) on page 58

OTEST_2 Crossover Test Structure Element - Type 2 (S_COTEST_2) on page 58

UBEAM Euler Column (Doubly Supported Beam) Elements (S_EUBEAM_1, S

UBEAMS Array of Euler Column Elements (S_EUBEAMS_1, S_EUBEAMS_2)

RING Guckel Ring Test Structure Elements (S_GURING_1, S_GURING_2)

RINGS Array of Guckel Ring Elements (S_GURINGS_1) on page 596

AD Multilayer Pad Element (S_PAD_1) on page 599

onator Elements

LATE_1 Plate (S_PLATE_1) on page 601

COMB_1 Comb Drive (S_LCOMB_3) on page 604


522

is based on theeveloped at MCNCact DABT 63-93-C-L User’s Guide,” by94, 1997 by MCNC.are reproduced herehe attached CaMEL

e following URLs:

S_L

S_G

S_P

Element Description


Acknowledgment

The layout generation portion of the MEMSLib libraryConsolidated Micromechanical Element Library, CaMEL, dand funded by the Defence Advanced Projects Agency contr0051. The CaMEL software and associated manual, “CaMERamaswamy Mahadevan & Allen Cowen are Copyright ©19The CaMEL software and portions of the CaMEL manual and distributed with permission from MCNC. Please read tlicense and copyright.

For more information on MCNC or CaMEL, please refer to th

� http://www.mcnc.org/

� http://mems.mcnc.org/

� http://mems.mcnc.org/camel.html

FBS_3 Folded Spring (S_LFBS_3) on page 607

DPLATE_1 Ground Plate (S_GDPLATE_1 ) on page 610

AD_2 Bonding Pad (S_PAD_2) on page 612


523

Copyright © 1994, 1996 by MCNC. All rights reserved.

at you have read,

mercial purposes isrt thereof is strictly

umentation shall at the same. Licensee Licensee’s internalright notice on any

implied. By way ofon or warranties ofthat the use of thefringe any patents,

held liable for anys with respect to anyr arising from this

s Inc. GDSII is a trademarks of Sunratories.


By using the software, you, the Licensee, indicate thunderstood, and will comply with the terms listed below.

Permission to use, copy, and modify for internal, noncomhereby granted. Any distribution of this program or any paprohibited without the prior written consent of MCNC.

Title to copyright to this software and to any associated docall times remain with MCNC and Licensee agrees to preserveagrees not to make any copies, in whole or part, except for thenoncommercial use. Licensee also agrees to place this copysuch copies.

MCNC makes no representation or warranties, express or example, but not limitation, MCNC makes no representatimerchantability or fitness for any particular purpose or licensed software components or documentation will not incopyrights, trademarks or other rights. MCNC shall not beliability nor for any direct, indirect, or consequential damageclaim by Licensee or any third party on account of oAgreement or use of this software.

PostScript® is a registered trademark of Adobe Systemtrademark of Calma, Valid, Cadence. SUN and SunOS areMicrosystems, Inc. UNIX is a trademark of AT&T Bell Labo

MEMSLib Reference Using the MEMS Library

524

MEMS Pro Tutorial steps a user should

the MEMS symbol

equirements.

.include process.sp”in the memslib.sdb

dit.

s, iterate the processl the two match.


Using the MEMS Library

New users of the MEMS Library should first run through the on page 14. Listed below are high-level descriptions of thetake to use the MEMS Library to create a MEMS design.

� Create an S-Edit schematic design using symbols from library.

� Customize the properties of the symbols to meet the design r

� Add stimulus and simulation conditions to the schematic.

� Import the process parameters for MUMPS by adding a “statement to the schematic. Examining the test schematics file may help illustrate the setting up of simulations using S-E

� Export to SPICE netlist and run a T-Spice simulation.

� If the simulation results do not match the design requirementof modifying symbol properties and running simulations unti

� Generate layout using the MEMS Layout Palette.

� Verify design.

MEMSLib Reference Using the MEMS Library

525

The simulation model for each library element is documented in the schematichould be examinedlement and to checkuch as the side drive these elements, you

or more information


view of the symbol. The documentation of these models sbefore use in order to fully understand the behavior of the efor usage information. Note that some schematic elements (smotor) must be built from composable elements. To simulatemay have to specify some external parameters.

Note Review the release notes and the MEMS Application Notes fon the library elements and their use.

MEMSLib Reference Accessing the MEMS Library Palette

526

y Palette in MEMSigure 124).


Accessing the MEMS Library Palette

To access the MEMS Library Palette, select Tools > LibrarPro Palette. The Library Palette dialog box should appear (F

Figure 124: Library Palette


527

The Library Palette is a dialog box. Each tab corresponds to a set of MEMSts, and resonators.

clicking the palettealette. A parameters of the element. Fore Motor, click the

alog box


elements. Categories include active, passive, and test elemen

The layout generator for a particular element is executed bybutton corresponding to the desired element in the library pdialog box appears in which you can modify the parametersinstance, if you want to create a Harmonic Side Drivcorresponding button and the following dialog box appears:

Figure 125: Harmonic Side Drive Parameters di


528

Once the parameters have been set, click OK to create the device layout in a new

ow Details button).box and displays theou wish to view thetive element), click

anded (Figure 126).


cell and instantiate it in the current cell.

Show Details Button

The Library Palette dialog box contains a new button (the ShThis button allows you to enlarge the Library Palette dialog layout illustration for the selected element. If, for instance, ylayout illustration of the Harmonic Side Drive Motor (an acthe Show Details button and the Library Palette will be exp


529

box

button. By selecting initial size and the


Figure 126: Enlarged Library Palette dialog

The Show Details button has changed to the Hide Details this button, you revert the Library Palette dialog box to itsShow Details button appears again.


530

Editing the Generated Layout Parameters

t Component in thee 127) appears withk OK. The layout is

uckel rings


To edit a generated layout, select it and choose Tools > EdiMEMS Pro Palette. The device parameters dialog box (Figurthe parameters values filled in. Change these values and clicautomatically updated.

Figure 127: Parameters dialog box for the array of G


531

MEMSLib L-Edit Library Page (Library)acro MEMSLIB.DLL

nts


L-Edit: File MEMSLIB.TDB / Cell Library / M

Figure 128: Various available library eleme

MEMSLib Reference Active Elements

532

,

File MEMSLIB.SDB

acro MEMSLIB.DLL

d (poly2) structural

first structural layerOMB_1_M_X. Thed structural layer

OMB_2_M_X.


Active Elements

Linear Electrostatic Comb Drive Elements (S_LCOMB_1S_LCOMB_2)

S-Edit: L-Edit: File MEMSLIB.TDB / M

Description

Generates a linear comb drive on the first (poly1) or seconlayer.

The linear electrostatic comb drive that is designed on the (S_LCOMB_1) has a corresponding schematic named S_LClinear electrostatic comb drive designed on the secon(S_LCOMB_2) has a corresponding schematic named S_LC

Parameter List


533

The following table provides the electrostatic comb drive parameters, their

2_M_X (for poly2

atic parameter name

ger_length

nger_width

inger_gap

ger_overlap

DIR


values and descriptions.

S-Edit Symbol Name S_LCOMB_1_M_X (for poly1 layer), S_LCOMB_layer)

Description Layout Parameter

Name

Default Value

Schem

Active rotor comb width arwidth 98 µm

Rotor yoke width rywidth 12 µm

Stator yoke width sywidth 14 µm

Length of comb fingers flength 60 µm fin

Width of comb fingers fwidth 4 µm fi

Air gap between fingers airgap 3 µm f

Stator-rotor finger overlap rsoverlap 30 µm fin

Direction of comb 1


534

Linear Electrostatic Comb Drive Elements

s

x


Layout Palette Button

Layout Parameter Entry Dialog Bo

Layout Parameter Illustration


535

Linear Side Drive Elements (S_LSDM_1, S_LSDM_2))

File MEMSLIB.SDB

acro MEMSLIB.DLL

tructural layer.

rs, their values and

(S_LSDM_1) has ae linear side driveas a corresponding

atic parameter name

_active_length

r_pole_width



DescriptionGenerates a linear side drive on the first or second s

Parameter List

The following table provides the linear side drive paramete.descriptions

The linear side drive designed on the first structural layer corresponding schematic named S_LSDM_1_M_PHI. Thdesigned on the second structural layer (S_LSDM_2) hschematic named S_LSDM_2_M_PHI..


Name

Default Value

Schem

Active length of motor mlength 120 µm motor

Stator electrode width swidth 12 µm stato


536

_X (for poly2 layer)

r_pole_pitch

r_pole_length

r_pole_width

r_pole_pitch

r_pole_height

r_stator_gap

ber_of_gaps

atic parameter name


S-Edit Symbol Name S_LSDM_1_M_X (for poly1 layer), S_LSDM_2_M

Stator electrode pitch spitch 20 µm stato

Stator electrode length slength 40 µm stato

Rotor tooth width rwidth 12 µm roto

Rotor tooth pitch rpitch 30 µm roto

Rotor tooth height rheight 20 µm roto

Rotor yoke width yokewidth 20 µm

Air gap between stator and rotor

airgap 2 µm roto

Rotor offset with respect to stator

roffset 0 µm

Number of gaps 3 num


Name

Default Value

Schem


537

Linear Side Drive Elements

tration



Layout Parameter Entry Dialog Box

Layout Parameter Illus


538

Unidirectional Rotary Comb Drive Elements - Type 1 (S_RCOMBU_1,

File MEMSLIB.SDB

acro MEMSLIB.DLL

first or second

ned on the first g symbol

ehavioral model tary comb drive of

OMBU_2) has a S) and a _PHI_B).


S_RCOMBU_2)


DescriptionGenerates a unidirectional rotary comb drive on thestructural layer.The unidirectional rotary comb drive of type 1 desigstructural layer (S_RCOMBU_1) has a correspondin(S_RCOMBU_1_M_PHI_S) and a corresponding b(S_RCOMBU_1_M_PHI_B). The unidirectional rotype 1 designed on the second structural layer (S_RCcorresponding schematic (S_RCOMBU_2_M_PHI_corresponding behavioral model (S_RCOMBU_2_M


539

Parameter List

mb drive (type 1)

atic parameter name

angular_length

_inner_radius

r_inner_radius

r_outer_radius

_spoke_width

_spoke_width

nger_width

inger_gap

ger_overlap

DIR


The following table provides the unidirectional rotary coparameters, their values and descriptions.


Name

Default Value

Schem

Active angular comb length aclength 60 degrees active_

Inner radius of rotor rri 50 µm rotor

Inner radius of stator comb rsi 60 µm stato

Outer radius of stator comb rso 150 µm stato

Rotor spoke width rspokew 12 µm rotor

Stator spoke width sspokew 15 µm stator


Air gap between adjacent comb fingers

airgap 5 µm f

Angular finger overlap trsovlp 30 degrees fin

Direction of comb 1


540

S-Edit Symbol Name S_RCOMBU_1_M_PHI_S and S_RCOMBU_1_M_PHI_B (for poly1 _2_M_PHI_B (for


layer), S_RCOMBU_2_M_PHI_S and S_RCOMBUpoly2 layer)


541

Unidirectional Rotary Comb Drive Elements-Type1

Illustration




Layout Parameter


542

Unidirectional Rotary Comb Drive Elements - Type 2 (S_RCOMBUA_1,

File MEMSLIB.SDB

acro MEMSLIB.DLL

first or second he difference is in gers is at (X-center, xis.ned on the first ing symbol

behavioral model otary comb drive of OMBUA_2) has a

I_S) and a _M_PHI_B).


S_RCOMBUA_2)


Description Generates a unidirectional rotary comb drive on thestructural layer. This element is similar to rcombu. Tthe design of the spoke. The center of the circular finY-center) and the rotor spoke is aligned with the X-aThe unidirectional rotary comb drive of type 2 desigstructural layer (S_RCOMBUA_1) has a correspond(S_RCOMBUA_1_M_PHI_S) and a corresponding(S_RCOMBUA_1_M_PHI_B). The unidirectional rtype 2 designed on the second structural layer (S_RCcorresponding schematic (S_RCOMBUA_2_M_PHcorresponding behavioral model (S_RCOMBUA_2


543

Parameter List

ide drive (type 2)

atic parameter name

er_x_location

er_y_location

angular_length

_inner_radius

r_inner_radius

r_outer_radius

_spoke_width

_spoke_width

nger_width


The following table provides the unidirectional rotary sparameters, their values and descriptions.


Name

Default Value

Schem

X location of center of comb fingers

xcenter 0 cent

Y location of center of comb fingers

ycenter 0 cent

Active angular comb length aclength 60 degrees active_








544

_M_PHI_B (for

inger_gap

ger_overlap

DIR

atic parameter name


S-Edit Symbol Name S_RCOMBUA_1_M_PHI_S and S_RCOMBUA_1poly1 layer), S_RCOMBUA_2_M_PHI_S and S_RCOMBUA_2_M_PHI_B (for poly2 layer)

Air gap between adjacent comb fingers

airgap 5 µm f

Angular finger overlap trsfovlp 30 degrees fin

Direction of comb drive 1


Name

Default Value

Schem


545

Unidirectional Rotary Comb Drive Elements - Type2

stration




Layout Parameter Illu


546

Bidirectional Rotary Comb Drive Elements (S_RCOMBD_1,

File MEMSLIB.SDB

acro MEMSLIB.DLL

irst or second

first structural layer

ehavioral model ry comb drive D_2) has a S) and a _PHI_B).


S_RCOMBD_2)


DescriptionGenerates a bidirectional rotary comb drive on the fstructural layer. The bidirectional rotary comb drive designed on the (S_RCOMBD_1) has a corresponding symbol (S_RCOMBD_1_M_PHI_S) and a corresponding b(S_RCOMBD_1_M_PHI_B). The bidirectional rotadesigned on the second structural layer (S_RCOMBcorresponding schematic (S_RCOMBD_2_M_PHI_corresponding behavioral model (S_RCOMBD_2_M

Parameter List


547

The following table provides the bidirectional rotary comb drive parameters,

_PHI_B (for poly1

atic parameter name

_comb_length

_inner_radius

r_inner_radius

r_outer_radius

_spoke_width

_spoke_width

nger_width

inger_gap

ger_overlap

DIR


their values and descriptions.

S-Edit Symbol Name S_RCOMBD_1_M_PHI_S and S_RCOMBD_1_M


Name

Default Value

Schem

Active angular comb length aclength 120 degrees active







Airgap between adjacent comb fingers

airgap 5 µm f

Angular finger overlap afovlp 30 degrees fin

Direction of combdrive 1


548

layers), S_RCOMBD_2_M_PHI_S and S_RCOMBD_2_M_PHI_B (for


poly2 layers)


549

Bidirectional Rotary Comb Drive Elements

r Illustration




Layout Paramete


550

Rotary Comb Drive Elements (S_RCDM_1, S_RCDM_2)

File MEMSLIB.SDB

acro MEMSLIB.DLL

structural layer.

al layer M_1_M_PHI_S) 1_M_PHI_B). The layer (S_RCDM_2) I_S) and a HI_B).



DescriptionGenerates a rotary comb drive on the first or second

The rotary comb drive designed on the first structur(S_RCDM_1) has a corresponding symbol (S_RCDand a corresponding behavioral model (S_RCDM_rotary comb drive designed on the second structural has a corresponding schematic (S_RCDM_2_M_PHcorresponding behavioral model (S_RCDM_2_M_P

Parameter List


551

The following table provides the rotary comb drive parameters, their values and

atic parameter name

_inner_radius

_outer_radius

r_inner_radius

r_outer_radius

nger_width

inger_gap

_spoke_width

_spoke_width

r_spoke_gap

ger_overlap


descriptions.


Name

Default Value

Schem

Inner radius of rotor ring rringi 38 µm rotor

Outer radius of rotor ring rringo 44 µm rotor




Airgap between adjacent comb fingers

airgap 3 µm f



Gap between stator spokes at radius

sspokeg 5 µm stato

Stator overlap as a fraction of length

rsovlp 0.3 fin


552

S-Edit Symbol Name S_RCDM_1_M_PHI_S and S_RCDM_1_M_PHI_B (for poly1 layer), (for poly2 layer)


S_RCDM_2_M_PHI_S and S_RCDM_2_M_PHI_B


553

Rotary Comb Drive Elements

stration






554

Rotary Side Drive Elements (S_RSDM_1, S_RSDM_2)

File MEMSLIB.SDB

acro MEMSLIB.DLL

ructural layer. If the with the first stator

layer (S_RSDM_1) . The rotary side DM_2) has a


atic parameter name

g_inner_radius

le_inner_radius



Description Generates a rotary side drive on the first or second stoffset is set to zero, the first rotor tooth will be alignedelectrodes.The rotary side drive designed on the first structural has a corresponding symbol (S_RSDM_1_M_PHI) drive designed on the second structural layer (S_RScorresponding schematic (S_RSDM_2_M_PHI).

Parameter List

The following table provides the rotary side drive parametedescriptions.


Name

Default Value

Schem

Inner radius of rotor ring rring 50 µm rotor_rin

Inner radius of rotor tooth rri 60 µm rotor_po


555

_M_PHI (for poly2

le_outer_radius

le_inner_radius

le_outer_radius

e_angular_width

les_angular_gap

le_angular_width

les_angular_gap

r_angular_offset

atic parameter name


S-Edit Symbol Name S_RSDM_1_M_PHI (for poly1 layer), S_RSDM_2layer)

Outer radius of rotor tooth rro 150 µm rotor_po

Inner radius of stator electrode

rsi 155 µm stator_po

Outer radius of stator electrode

rso 200 µm stator_po

Angular width of rotor pole phirp 18 degrees rotor_pol

Angular gap between adjacent rotor teeth

phirg 27 degrees rotor_po

Angular widh of stator pole phisp 18 degrees stator_po

Angular gap between adjacent stator poles

phisg 12 degrees stator_po

Angular offset of rotor roffset 0 degrees rotor_stato


Name

Default Value

Schem


556

Rotary Side Drive Elements

Illustration




Layout Parameter


557

Harmonic Side Drive Elements (S_HSDM_1, S_HSDM_2)

File MEMSLIB.SDB

acro MEMSLIB.DLL

d structural layer. A to complete the

layer (S_HSDM_1) . The rotary side DM_2) has a

meters, their values

atic parameter name

_inner_radius

_outer_radius



Description Generates a harmonic side drive on the first or seconcentral bearing (bearing1, bearing2) has to be addedharmonic or wobble motor.The rotary side drive designed on the first structural has a corresponding symbol (S_HSDM_1_M_PHI) drive designed on the second structural layer (S_HScorresponding schematic (S_HSDM_2_M_PHI).

Parameter List

The following table provides the harmonic side drive paraand descriptions.


Name

Default Value

Schem

Inner rotor radius rri 5 µm rotor

Outer rotor radius rro 60 µm rotor


558

_M_PHI (for poly2

r_ring_width

r_inner_radius

r_outer_radius

r_pole_angle

oles_angular_gap

atic parameter name


S-Edit Symbol Name S_HSDM_1_M_PHI (for poly1 layer), S_HSDM_2layer)

Rotor ring width rwidth 10 µm roto

Stator inner radius rsi 65 µm stato

Stator outer radius rso 125 µm stato

Stator pole angle phisp 18 degrees stato

Angular gap between poles phisg 12 degrees stator_p


Name

Default Value

Schem


559

Harmonic Side Drive Elements

stration





MEMSLib Reference Passive Elements

560

File MEMSLIB.SDB

acro MEMSLIB.DLL

a rotary element on substrate, and the g is formed on the tructural layer2 is structural layer1 is the two bearing d sacrificial layer ss. The radius of the d the second


Passive Elements

Journal Bearing Elements 1 (S_JBEARG_1)S-Edit:

L-Edit: File MEMSLIB.TDB / M

Description Generates a journal bearing intended to connect withthe first structural layer. The shaft is anchored to theretaining cap on top of the shaft central to the bearinsecond structural layer. The outside of the shaft on sone bearing surface while the inside of the rotor on the second-bearing surface. The clearance between surfaces is determined by the thickness of the seconused in the surface micromachining fabrication proceshaft is set by the inner radius of the journal rotor ansacrificial layer thickness used in the process.


561


atic parameter name

ap_radius

_inner_radius

_outer_radius


Parameter List

The following table provides the journal bearing 1 parametedescriptions.

S-Edit Symbol Name S_JBEARG_1

S-Edit Test Schematic N/A


Name

Default Value

Schem

Radius of cap of central shaft rcap 8.5 µm c

Inner radius of journal rotor rinner 4.5 µm rotor

Outer radius of journal rotor router 15 µm rotor


562

Journal Bearing Elements 1

tration






563

Journal Bearing Elements 2 (S_JBEARG_2)

File MEMSLIB.SDB

acro MEMSLIB.DLL

a rotary element on on structural layer2 structural layer1 is he two bearing d sacrificial layer. e journal rotor and

cess. The rotor has y connected to the


atic parameter name

ap_rafius

_inner_radius



Description Generates a journal bearing intended to connect withthe second structural layer. The outside of the shaft is one bearing surface while the inside of the rotor onthe second bearing surface. The clearance between tsurfaces is determined by the thickness of the seconThe radius of the shaft is set by the inner radius of ththe second sacrificial layer thickness used in the proan outer ring on structural layer2 that is mechanicallrotary part of the bearing on structural layer1.

Parameter List

The following table provides the journal bearing 2 parametedescriptions.


Name

Default Value

Schem

Radius of cap of central shaft rcap 8.5 µm c

Inner radius of journal rotor rinner 4.5 µm rotor


564

_outer_radius

atic parameter name


S-Edit Symbol Name S_JBEARG_2


Outer radius of journal rotor router 15 µm rotor


Name

Default Value

Schem


565

Journal Bearing Elements 2

ion




Layout Parameter Illustrat


566

Linear Crab Leg Suspension Elements - Type 1 (S_LCLS_1,

File MEMSLIB.SDB

acro MEMSLIB.DLL

r second structural of the shuttle mass. tle mass.


atic parameter name

am1_length

am1_width

am2_length

am2_width


S_LCLS_2)


Description Generates a linear crab leg suspension on the first olayer. The local origin of the element is at the centerActuators can be connected to the yokes on the shut

Parameter List

The following table provides linear crab leg suspension paraand descriptions.


Name

Default Value

Schem

Length of beam1 lbeam1 30 µm be

Width of beam1 wbeam1 20 µm be




567

s_separation

uttle_width

uttle_lendth

chor_width

le_yoke_width

e_yoke_length

atic parameter name


S-Edit Symbol Name S_LCLS_1_M_X, S_LCLS_2_M_X

Seperation between type 1 beams

beam1sep 70 µm beam

Width of shuttle swidth 30 µm sh

Length of shuttle slength 100 µm sh

Width of anchor support wanchor 25 µm an

Width of shuttle yoke wsyoke 12 µm shutt

Length of shuttle yoke lsyoke 98 µm shuttl


Name

Default Value

Schem


568

Linear Crab Leg Suspension Elements - Type 1

on




Layout Parameter Illustrati


569

Linear Crab Leg Suspension Elements - Type 2 (S_LCLSB_1,

File MEMSLIB.SDB

acro MEMSLIB.DLL

r second structural of the shuttle mass. le mass. Unlike lcls,

n parameters, their

atic parameter name

am1_length

am1_width

am2_length


S_LCLSB_2)


Description Generates a linear crab leg suspension on the first olayer. The local origin of the element is at the centerActuators can be connected to the yokes on the shuttthis element is anchored at 4 points.

Parameter List

The following table provides the linear crab leg suspensiovalues and descriptions.


Name

Default Value

Schem





570

am2_width

s_separation

uttle_width

uttle_length

chor_width

le_yoke_width

e_yoke_length

atic parameter name


S-Edit Symbol Name S_LCLSB_1_M_X, S_LCLSB_2_M_X


Seperation between type 1 beams

beam1sep 70 µm beam


Length of shuttle slength 100 µm sh





Name

Default Value

Schem


571

Linear Crab Leg Suspension Elements - Type 2






572

Linear Folded Beam Suspension Elements (S_LFBS_1, S_LFBS_2)

File MEMSLIB.SDB

acro MEMSLIB.DLL

rst or second ents can be s.

on parameters, their

atic parameter name

xure_length

xure_width

s_separation

uss_width

uttle_width



Description Generates a linear folded beam suspension on the fistructural layer. Actuators or other mechanical elemconnected to the yokes at the ends of the shuttle mas

Parameter List

The following table provides the linear folded beam suspensivalues and descritpions.


Name

Default Value

Schem

Length of beam lbeam 150 µm fle

Width of beam wbeam 4 µm fle

Seperation between beams beamsep 50 µm beam

Width of connecting bar wbar 12 µm tr



573

chor_width

le_yoke_width

e_yoke_length

atic parameter name


S-Edit Symbol Name S_LFBS_1_M_X, S_LFBS_2_M_X





Name

Default Value

Schem


574

Linear Folded Beam Suspension Elements






575

Dual Archimedean Spiral Spring Elements (S_SPIRAL_1,

File MEMSLIB.SDB

acro MEMSLIB.DLL

st or second spring is in a anical elements can

spiral spring. The he length of the n be selected to roperties of the

ng parameters, their

atic parameter name

rt_shaft_radius


S_SPIRAL_2)


Description Generates dual archimedean spiral springs on the firstructural layer. A possible application of the spiral torsional suspension system. Actuators or other mechbe connected to the rotor supports at the ends of thelength parameter of the spiral beam corresponds to tcentral axis of the beam. The element parameters caobtain the electrical connect layer on the dielectric pisolation layer.

Parameter List

The following table provides the dual archimedean spiral sprivalues and descriptions.


Name

Default Value

Schem

Radius of support shaft rshaft 10 µm suppo


576

_initial_radius

l_final_radius

iral_length

iral_width

_outer_radius

atic parameter name


S-Edit Symbol Name S_SPIRAL_1_M_PHI, S_SPIRAL_2_M_PHI

Starting radius of spiral beam rinner 15 µm spiral

Final radius of spiral beam router 65 µm spira

Length of each spiral beam length 300 µm sp

Width of the spiral beam width 2 µm sp

Outer radius of rotor support rrotor 80 µm rotor


Name

Default Value

Schem


577

Dual Archimedean Spiral Spring Elements

stration





MEMSLib Reference Test Elements

578

nt

File MEMSLIB.SDB

acro MEMSLIB.DLL

e used to test the e first electrical

o measure the ads are included in ents. An electrical

r dielectric


Test Elements

Area-Perimeter Dielectric Isolation Test Structure Eleme(S_APTEST_1)


Description Generates an area-perimeter test structure that can bdielectric properties of the isolation layer between thconnect layer and the substrate. It can also be used tresistance of the first electrical contact layer. Probe pthe structure to allow electrical probing for measuremconnection to the conductive substrate is required fomeasurements.

Parameter List


579

The following table provides the area-perimeter dielectric isolation test structure

atic parameter name

chor_width

entine_height

e_half_wavelength

_of_wavelengths


parameters, their values and descriptions.

S-Edit Symbol Name N/A


Name

Default Value

Schem

Width of electrical connect wire

width 50 µm an

Serpentine height heigth 940 µm serp

Serpentine wavelength length 60 µm serpentin

Number of wavelengths nw 10 µm number


580

Area-Perimeter Dielectric Isolation Test Structure Element


Layout Palette Button Layout Parameter Illustration

Layout Parameter entry dialog


581

Crossover Test Structure Element - Type 1 (S_COTEST_1)

File MEMSLIB.SDB

acro MEMSLIB.DLL

to test electrical and 2 to cross over ires are anchored to

type 1) parameters,

atic parameter name

yer_line_width



Description Generates a crossover test structure that can be usedinterconnection using bridges on structural layers 1 lines on the first electrical interconnect layer. The wthe substrate except at the bridges.

Parameter List

The following table provides the crossover test structure (their values and descriptions.


Name

Default Value

Schem

Wire width of electrical connect layer

p0width 10 µm elec_la


582

t_layer_line_width

uct_layer_line_width

atic parameter name



Wire width of first structural layer

p1width 12 µm first_struc

Wire width of second structural layer

p2width 12 µm second_str


Name

Default Value

Schem


583

Crossover Test Structure Element - Type 1

ation




Layout Parameter Illustr


584

Crossover Test Structure Element - Type 2 (S_COTEST_2)

File MEMSLIB.SDB

acro MEMSLIB.DLL

to test electrical cross over lines on nchored to the

type 2) parameters,

ic parameter name

t_layer_line_width

ct_layer_line_width



Description Generates a crossover test structure that can be usedinterconnection using bridges on structural layer2 tothe first electrical interconnect layer. The wires are asubstrate except at the bridges.

Parameter List

The following table provides the crossover test structure (their values and descriptions.


Name

Default Value

Schemat

Wire width of first structural layer

p1width 10 µm first_struc

Wire width of second structural layer

p2width 12 µm second_stru


585




586

Crossover Test Structure Element - Type 2

tration






587

Euler Column (Doubly Supported Beam) Elements (S_EUBEAM_1,

File MEMSLIB.SDB

acro MEMSLIB.DLL

the first or second e the residual strain y, an array of beams buckling length for Hence, the name, rameters are chosen nce the residual ess of the structural al buckling will wise, buckling will


S_EUBEAM_2)


Description Generates a doubly supported beam test structure onstructural layer. This element can be used to estimatin a film with a compressive residual strain. Generallwith varying lengths is used to determine the criticalthe residual strain in the structural layer of interest. Euler columns, for these test structures. The beam pato set the critical buckling strain of the beam and hecompressive strain that it would detect. If the thicknlayer used is larger than the width of the beam, lateroccur; i.e., buckling in the plane of the wafer. Otheroccur out of the plane of the wafer.

Parameter List


588

The following table provides the Euler column parameters, their values and

atic parameter name

am_length

eam_width

nchor_size


descriptions.



Name

Default Value

Schem

Length of doubly supported beam

blength 200 µm be

Width of doubly supported beam

bwidth 20 µm b

Size of anchor supports asize 30 µm a


589

Euler Column (Doubly Supported Beam) Elements






590

Array of Euler Column Elements (S_EUBEAMS_1, S_EUBEAMS_2)

File MEMSLIB.SDB

acro MEMSLIB.DLL

ures on the first or stimate the residual he element uses the

ine the beam lengths are chosen rt before buckling be detected. Euler ilm is used.


atic parameter name

_strain_minimum

strain_maximum



Description Generates a set of doubly supported beam test structsecond structural layer. This element can be used to estrain in a film with a compressive residual strain. Tresidual strain range and step size specified to determlengths of the array of doubly supported beams. Thesuch that the critical strain that the beams can suppocorresponds to the desired value of residual strain tobuckling criterion for the compressive strain in the f

Parameter List

The following table provides the array of Euler column paraand descriptions.


Name

Default Value

Schem

Minimum residual strain e0min 0.0005 µm residual

Maximum residual strain e0max 0.0025 µm residual_


591

al_strain_step

ams_width

nchor_size

m_thickness

atic parameter name



Residual strain by step dele0 0.00025 µm residu

Width of doubly supported beam

bwidth 20 µm be


Thickness of beam structural layer

heigth 2 µm bea


Name

Default Value

Schem


592

Array of Euler Column Elements






593

The array of Euler columns depend on the following equation:

nimum of width andare considered idealodeled. The beam

beam and hence theess of the structuralng will occur.

GURING_2)

File MEMSLIB.SDB

acro MEMSLIB.DLL

e first or second stimate the residual

of rings with at which buckling nce infer the tensile g parameters are beam and hence the


where L is the length, and h is the height of the beam (the miheight parameters specified). The anchored ends of the beam clamped ends and the elasticity of the supports is not mparameters are chosen to set the critical buckling strain of theresidual compressive strain that it would detect. If the thicknlayer used is larger than the width of the beam, lateral buckli

Guckel Ring Test Structure Elements (S_GURING_1, S_

S-Edit:


Description Generates a single “Guckel” ring test structure on thstructural layer. These ring structures can be used to estrain in a film with tensile residual strain. An arraydifferent radii are used to estimate the critical radiusoccurs in the cross beam of the test structure and heresidual stress present in the structural film. The rinchosen to set the critical buckling strain of the cross

Gcx

2h

2

3L2

----------=


594

residual tensile strain that it would detect. If the thickness of the ross beam, lateral wafer. Otherwise,

re parameters, their

atic parameter name

mean_radius

ing_width

_beam_width

nchor_size


structural layer used is larger than the width of the cbuckling will occur; i.e., buckling in the plane of thebuckling will occur out of the plane of the wafer.

Parameter List

The following table provides the Guckel ring test structuvalues and descriptions.



Name

Default Value

Schem

Mean radius of ring radius 200 µm ring_

Width of ring bring 20 µm r

Width of cross beam bbeam 10 µm cross



595

Guckel Ring Test Structure Elements

on






596

Array of Guckel Ring Elements (S_GURINGS_1)

File MEMSLIB.SDB

acro MEMSLIB.DLL

n the first or second stimate the residual parameters are a mechanical model layer used is larger ill occur; i.e., ng will occur out of


atic parameter name

_strain_minimum

strain_maximum


S-Edit:


Description Generates an array of “Guckel” ring test structures ostructural layer.These ring structures can be used to estrain in a film with tensile residual strain. The ring calculated for the critical strain values desired using of the test structure. If the thickness of the structuralthan the width of the cross beam, lateral buckling wbuckling in the plane of the wafer. Otherwise, bucklithe plane of the wafer.

Parameter List

The following table provides the array of Guckel ring paraand descriptions.


Name

Default Value

Schem

Minimum residual strain e0min 0.0005 residual

Maximum residual strain e0max 0.0025 residual_


597

al_strain_step

ing_width

_beam_width

nchor_size

g_thickness

issons_ratio

atic parameter name



Residual strain step size dele0 0.00025 residu

Width of ring bring 20 µm r

Width of cross beam bbeam 10 µm cross


Thickness of structural layer heigth 2 µm rin

Poisson’s ratio for structural film

nu 0.23 po


Name

Default Value

Schem


598

Array of Guckel Ring Elements






599

Multilayer Pad Element (S_PAD_1)

File MEMSLIB.SDB

acro MEMSLIB.DLL

ses. It has a stack of nect layer, first al layer, and the


atic parameter name

ad_width



Description Generates a pad for wafer probe or wire bond purpolayers electrically connecting the first electrical constructural layer, first structural layer, second structursecond (and final) electrical layer.

Parameter List

The following table provides the multilayer pad parametedescriptions.



Name

Default Value

Schem

Pad width padw 100 µm p


600

Multilayer Pad Element

on





MEMSLib Reference Resonator Elements

601

File MEMSLIB.SDB

acro MEMSLIB.DLL

s and descriptions.

atic parameter name

late_width

late_length


Resonator Elements

Plate (S_PLATE_1)


DescriptionGenerates a plate on the Poly1 layer.

Parameter List

The following table provides the plate parameters, their value

S-Edit Symbol Name S_PLATE_1_M_X


Name

Default Value

Schem

Plate width width 200 µm p

Plate length length 200 µm p


602


603

Plate

ation




Layout Parameter Illustr


604

Comb Drive (S_LCOMB_3)

File MEMSLIB.SDB

acro MEMSLIB.DLL

s, their values and

atic parameter name

width

length

gap

overlap

ber_of_gaps


S-Edit: L-Edit: File MEMSLIB.TDB / Cell comb / M

Description Generates a comb drive on the Poly1 layer.

Parameter List

The following table provides the comb drive parameterdescriptions.


Name

Default Value

Schem

Finger width width 4 µm

Finger length length 40 µm

Finger gap gap 3 µm

Finger overlap overlap 15 µm

Number of gaps ng 20 num


605

S-Edit Symbol Name S_LCOMB_3_M_X



606

Comb Drive (comb)






607

Folded Spring (S_LFBS_3)

File MEMSLIB.SDB

acro MEMSLIB.DLL


atic parameter name

xure_width

xure_length

re_outer_gap

re_inner_gap


S-Edit: L-Edit: File MEMSLIB.TDB / Cell fspring / M

DescriptionGenerates a folded spring on the Poly1 layer.

Parameter List

The following table provides the folded springs parametedescriptions.

S-Edit Symbol Name S_LFBS_3_M_X


Name

Default Value

Schem

Beam width width 2 µm fle

Beam length length 200 µm fle

Outer gap inner gap 10 µm flexu

Inner gap outer gap 10 µm flexu


608


609

Folded Spring






610

Ground Plate (S_GDPLATE_1)

File MEMSLIB.SDB

acro MEMSLIB.DLL

s, their values and

atic parameter name

late_width

late_length


S-Edit: L-Edit: File MEMSLIB.TDB / Cell groundplate / M

Description Generates a ground plate on the Poly0 layer.

Parameter List

The following table provides the ground plate parameterdescriptions.

S-Edit Symbol Name S_GDPLATE_1



Name

Default Value

Schem

Ground plate width width 300 µm p

Ground plate length length 600 µm p


611

Ground Plate






612

Bonding Pad (S_PAD_2)

File MEMSLIB.SDB

acro MEMSLIB.DLL

s, their values and

atic parameter name

ad_width

ad_length


S-Edit: L-Edit: File MEMSLIB.TDB / Cell bpad / M

Description Generates a bonding pad.

Parameter List

The following table provides the bonding pad parameterdescriptions.

S-Edit Symbol Name S_PAD_2



Name

Default Value

Schem

Pad width width 100 µm p

Pad length length 100 µm p


613

Bonding Pad

tion




Layout Parameter Illustra

MEMScAP

614

615

616

619

620

621

622


16 Technology Setup

��Introduction

��MCNC MUMPs

��Analog Devices/MCNC iMEMS

��Sandia ITT

��MOSIS/CMU

��MOSIS/NIST

Technology Setup Introduction

615

up information for/MCNC (iMEMS),ss setup informationprocess definitions,


Introduction

For your convenience, we have included technology setseveral processes: MCNC(MUMPS), Sandia(ITT), ADIMOSIS/CMU and MOSIS/NIST (SCNAMEMS). The proceincludes design rules, layer definitions, extraction rules, model parameter values, and macros.

Technology Setup MCNC MUMPs

616

date information.

designed to provide from the domestic MUMPs to accessas made available

ss and industry tot participants havecelerometers, micro

g process designedbility. Polysilicon is sacrificial material,ate. The process isActuators Center at


MCNC MUMPs

Note See http://mems.mcnc.org/mumps.html for the most up-to-

The Multi-User MEMS Processes (MUMPs) is a program low-cost access to MEMS technology. Hundreds of usersindustry, government and academic communities have usedMEMS. And beginning with MUMPs run #26, access wworldwide to the international MEMS community.

MUMPs provides low-risk opportunities for small busineaccess the prototype-to-commercialization pathway. Pascreated a wide range of devices using MUMPs, including acoptical components, actuators, motors and many others.

MUMPs is a three-layer polysilicon surface micro-machininto be as general as possible to provide maximum user flexiused as the structural material, deposited oxide (PSG) as theand silicon nitride for electrical isolation from the substrderived from work performed by the Berkeley Sensors and the University of California, Berkeley.


617

The process is different from most customized surface micromachining processespable of supporting

s not optimized withthicknesses of the

sers, and the layouthest possible yield.

cess


in that it is designed to be as general as possible, and to be camany designs on a single silicon wafer. Since the process wathe purpose of fabricating any one specific device, the structural and sacrificial layers were chosen to suit most udesign rules were chosen conservatively to guarantee the hig

��

Figure 129: Cross-Section of the MUMPs pro


618

Device Examples


Rotary Side-drive Motor

Rotary Comb-drive

Linear Comb-drive Resonator

Hinge

Technology Setup Analog Devices/MCNC iMEMS

619

tion.

stems. This processh polysilicon as the


Analog Devices/MCNC iMEMS

Note See http://imems.mcnc.org/ for the most up-to-date informa

MEMS stands for Integrated Micro machined-mechanical Sysupports BiCMOS with MEMS surface micromachining witstructural layer. Please refer to the website for more details.

Technology Setup Sandia ITT

620

.html for the most


Sandia ITT

Note See http://www.mdl.sandia.gov/micromachine/integratedup-to-date information.

EXPLANATIONS TO BE ADDED

Technology Setup MOSIS/CMU

621

the most up-to-date


MOSIS/CMU

Note See http://www.ece.cmu.edu/~mems/cmos-mems.html forinformation.

EXPLANATIONS TO BE ADDED

Technology Setup MOSIS/NIST

622

t/nist-mems-1.html

ing standard CMOSr to the website for


MOSIS/NIST

Note See http://www.mosis.org/New/Technical/Designsupporfor the most up-to-date information.

This process enables the fabrication of MEMS structures ustechnology and a maskless post processing step. Please refemore details.

MEMScAP

623

624

628

628

630

634

647

659

664

669

676


17 Process Definition

��Introduction

��Process Steps

��ProcessInfo

��Wafer

��Deposit

��Etch

��MechanicalPolish

��ImplantDiffuse

��Grow

��Process Definition Example: MUMPs

Process Definition Introduction

624

aracteristics of thetion in combinationtained in a process

ence, the geometriccess definitions aretch depths and etchersion or ambient

n file and importedProcess Definitionation can be storedyout in the Tanner

cess definition filescess definition files (MUMPS), Sandia design kits can be


Introduction

The 3D Modeler ascertains the three dimensional (3D) chdesigned device from fabrication process definition informawith L-Edit mask layout. The process information is condefinition (.pdt) file.

The process definition file is a text file that describes, in sequeffect of the fabrication steps used to build a device. Proparameterized in geometric terms, that is, in terms such as eangles, not in processing terms, such as time of immtemperature.

Process information can be entered into a process definitiointo L-Edit, or manually entered using the MEMS Pro Edit dialog. From the Edit Process Definition dialog, the informin a process definition file and/or stored as part of the laDatabase (.tdb) file.

Many designs use standard foundry processes for which prohave already been written. MEMS Pro includes complete proin design kits for major MEMS foundries, including MCNC(M3S), ADI (IMEMS), and MOSIS (NIST). Details aboutfound in chapter Technology Setup on page 343.


625

Process definitions sequentially list process commands and their parameters. All style for each entry

t must be complete. end of this chapter

on page 676.

later in the chapter,as text, numbers, ord for them are listed, S and layer) must-sensitive. The 3D (for example, I andle, TOP, BOT, ande entered exactly ass of type I, P and R


process parameters must appear between curly braces {}. Theappears in the sample code below.

Command={Parameter=settingParameter=settingParameter=”text”Parameter=real numberParameter=settingParameter=”text”Label=”label text”Comment=”comment text”

}

Although the parameters order may vary, the parameters lisAn actual process definition file appears in its entirety at thein the section entitled Process Definition Example: MUMPs

As you read the process command descriptions that appear you will note that parameters require specific inputs, such switches. Parameter types and the values that may be enterein the table below. In general, character strings (for examplebe enclosed in quotation marks. Parameter types are caseModeler will not recognize top as TOP. In general, numbersP) do not require quotation marks. Switches (for exampmicrons), do not require quotation marks, and they must bthey are given in the reference table. The numeric parameter


626

are in the units specified in the ProcessInfo step. Do not enter the unit whenits, see ProcessInfo

d 2147483648.

s.

on marks.

eters |

OT. Do not

OWFALL | FILL.


setting these parameters’ values. For details on specifying unon page 628.

Permissible Values for Process Parameter Types

Type Permissible Value(s)

A Angle in degrees. Any value between 0 and 90.

I An integer. A whole number between -2147483648 an

P A positive real number. Any positive decimal number.

R A real number. Any decimal number.

S A string. Text that must be enclosed in quotation mark

percent A decimal number between 0 and 100.

layer Any valid L-Edit layer name. Text enclosed in quotati

unit Any of the following units of length: microns | millimcentimeters | mils | inches | lambda | other.

face Any of the following three options: TOP | BOT | TOPBenclose in quotation marks.

dtype Any of the following three options: CONFORMAL | SNDo not enclose in quotation marks.


627

ptions available for

s any decimal otation marks. lso an acceptable

| SACRIFICIAL.

Do not enclose in

Type Permissible Value(s)


In the following pages, the parameters for each step and the othe designer are described in details.

scf The scf type characterizes the Scf parameter. It acceptfraction (a real number from 0.0 to 1.0) enclosed in quThe character value c, enclosed in quotation marks, is ainput for scf type.

etype Any of the following three options: SURFACE | BULKDo not enclose in quotation marks.

emask Any of the following two options: INSIDE | OUTSIDE. quotation marks.

Process Definition Process Steps

628

Steps. These steps, occur in the actual

ed by a description

wed by an example


Process Steps

Process definitions are concatenated from strings of Processor commands, appear in the file in the same order as theyfabrication processing.

Below, the syntax of each Process Step is described, followof the step, its uses, and its parameters.

ProcessInfo

The syntax for the ProcessInfo step is presented below, follocontaining valid entries for its parameters.

Syntax

ProcessInfo={Name=SVersion=SUnit=unit

}


629

Example

n process by Name,cess definition file.

ion marks is an

ation marks is an

ntered for Unit: | inches | quotation marks.


ProcessInfo = {Name = ”MUMPS”Version = ”1.0beta”Unit = microns

}

Description

The ProcessInfo command identifies the emulated fabricatioVersion, and Unit. It must be the first block of your proParameters for ProcessInfo are described below.

Parameter Description

Name Any valid process name enclosed in quotatacceptable entry for Name.

Version Any valid version number enclosed in quotacceptable entry for Version.

Unit Any of the following length units may be emicrons | millimeters | centimeters | milslambda | other. Do not enclose the entry in


630

Wafer

wed by an example


The syntax for the Wafer command is presented below, follocontaining valid entries for its parameters.

Syntax

Wafer={WaferID=SMaskName=layerThickness=PTarget=layerLabel=SComment=S

}

Example

Wafer={MaskName=”substrate”Thickness=5WaferID=”w1”Target=”substrate”Label=”Wafer”Comment=”Wafer”

}


631

Description

entified. The Wafer

. If multiple Waferrning will be issuedD Modeler.

ew Wafer. Since e Wafer, the is read-only. The ntry made for nclosed in e software will ned names.


A Process Step can be applied only once a wafer has been idcommand establishes a wafer and assigns it a name.

Multiple wafers are not supported in MEMS Pro Version 3steps exist, only the first Wafer command will be used. A waas the extraneous Wafer commands are encountered by the 3

Parameters for the Wafer command are described below.


WaferID This optional parameter identifies the nMEMS Pro Version 3 supports just onWaferID is assigned automatically anddefault value of w1 will override any eWaferID, where valid entries are text equotation marks. Future versions of thsupport multiple wafers and user-assig


632

me layer definesy of the mask ising object may beolygons. Multiple be drawn on ther extent. Objects extent will be

skName layer, itsinimum bounding

in quotation Name.

positive decimal kness.

rendering enter any valid uotation marks y be set to the D model Colors for 3D



MaskName The geometry drawn on the MaskNathe extent of the wafer. The boundarusually defined by a box, but any drawused, including circles and curved pobjects that are not touching can alsoMaskName layer to define the Wafethat extend past the drawn wafertruncated.

If no closed curve is drawn on the Maextent will be set to 110% of the mbox of the layout on all other masks.

Any valid L-Edit layer name enclosedmarks is an acceptable input for Mask

Thickness Vertical dimension of the Wafer. Any number is an acceptable input for Thic

Target This parameter specifies the 3D modelcharacteristics of the Wafer. You mayL-Edit layer name as text enclosed in qfor Target. Target and Maskname masame layer. For more information on 3rendering characteristics, see DefiningModels on page 114.


633

g, describing the progress dialog. quotation marks.

quotation marks.



Label During 3D model generation, this strinongoing step, will be displayed in the The Label may be any text enclosed in

Comment Comment may be any text enclosed in


634

Deposit

w, followed by an


The syntax for the Deposit command is presented beloexample containing valid entries for its parameters.

Syntax

Deposit={WaferID=SDepositType=dtypeFace=faceLayerName=layerThickness=P Scf=scfTarget=layerLabel=SComment=S

}

Example

Deposit={DepositType=CONFORMALFace=TOPLayerName=”Poly0”Thickness=.5Scf=”c”


635

WaferID=”w1”

:

our of the processed

shadowed by other

of the wafer plane.


Target=”Poly0”Label=”Deposit Poly0”Comment=”Deposit Poly0”

}

Description

Deposit types include CONFORMAL, SNOWFALL, and FILL

� CONFORMAL deposit adds a layer that follows the contwafer.

� SNOWFALL covers only those surfaces that are not surfaces on the wafer.

� FILL is a maskless Process Step that makes the surface

Each DepositType has unique parameter requirements.


636

DepositType = CONFORMAL

that will receive orts just one and is read-only. ry made for d in quotation pport multiple


A CONFORMAL deposit is illustrated below.

Parameters for CONFORMAL deposits are described below.


WaferID This optional parameter identifies the Wafer the deposit. Since MEMS Pro Version 3 suppWafer, the WaferID is assigned automaticallyThe default value of w1 will override any entWaferID, where valid entries are text enclosemarks. Future versions of the software will suwafers and user-assigned names.

t

Thickness Scf*Thickness


637

ORMAL, NFORMAL for a

t. Parameter h top and bottom.

L-Edit layer table entry for cally set to the

ical dimension of eposited on the



DepositType Type of deposit. Parameter options are CONFSNOWFALL, and FILL. The value is set to COconformal deposit.

Face Side of the Wafer that will receive the deposioptions are TOP, BOT, and TOPBOT, for botDo not enclose in quotation marks.

LayerName Name of the layer to be deposited. Any validname enclosed in quotation marks is an accepLayerName. LayerName and Target are typisame value.

Thickness You may enter any positive value for the vertthe CONFORMAL deposit. This thickness is dsides(s) specified by the Face parameter.


638

the height of the ed by the ntal surfaces of a

on intermediate ding to the ness and Scf on mber between 0 r character, must s equivalent to an eposit, that is, a

er contour. (The Version 3 and meter is assumed

ring y enter any valid

on marks for set to the same dering odels on page

ribing the s dialog. The marks.



Scf The Scf (Sidewall coverage factor) parameter ismaterial deposited on vertical sidewalls dividThickness of the material deposited on horizoCONFORMAL deposit. Material coverage (t)slopes depends on the angle of the wall accorrelationship described in the section on Thickpage 639. Entries for Scf can be a decimal nuand 1, or the letter c, and, whether numeral obe enclosed in quotation marks. An Scf of c iScf of 1.0, which is a completely conformal ddeposit with uniform thickness along the wafScf parameter is not supported in MEMS Protherefore not required. The value of this parato be 1.0 or c for this release.).

Target This parameter specifies the 3D model rendecharacteristics of the deposited layer. You maL-Edit layer name as text enclosed in quotatiTarget. Target and LayerName are typicallyvalue. For more information on 3D model rencharacteristics, see Defining Colors for 3D M114.

Label During 3D model generation, this string, descongoing step, will be displayed in the progresLabel may be any text enclosed in quotation


639

erage factor) can be

vious steps in the

tion marks.



Thickness and Scf

The relationship between Thickness and Scf (Sidewall covclarified using some diagrams.

Assume that the profile below has been created by prefabrication process.

Comment Comment may be any text enclosed in quota


640

Setting DepositType = CONFORMAL, Scf = 1.0 = c, and Thickness = to (for the following:

of the wafer.


example, MUMPS deposition of Poly1), the profile becomes

Material has been evenly deposited across the entire surface

to

to


641

If, however, Scf is set to a value between 0 and 1, the coverage will depend on

ds on the angle ofScf and Thickness

cf*Thickness, as itlf as much material

θ


the existing geometry, as the following diagram illuminates.

The thickness t on sidewalls at intermediate angles depeninclination θ of the sidewall and CONFORMAL parameters according to the following expression:

When the angle θ is 90°, the expression for t reduces to Smust, by the definition of Scf. Setting Scf to 0.5 deposits haon the sides of a 90° wall as on the top.

Scf*ThicknessThickness

t

t Thickness θ( )2

cos Scf2 θ( )

2sin+=


642

DepositType = SNOWFALL

surfaces, as showned surfaces have an

that will receive orts just one and is read-only. ry made for d in quotation pport multiple

face


SNOWFALL deposits no material on vertical and shadowedbelow. Horizontal surfaces have the deepest coverage. Inclinintermediate amount of material deposited upon them.

Parameters for SNOWFALL deposits are described below.


WaferID This optional parameter identifies the Wafer the deposit. Since MEMS Pro Version 3 suppWafer, the WaferID is assigned automaticallyThe default value of w1 will override any entWaferID, where valid entries are text enclosemarks. Future versions of the software will suwafers and user-assigned names.

flat surface inclined sur


643

ORMAL, OWFALL for a

meter options are ttom. Do not

L-Edit layer table entry for

ame value as

acteristics of the dit layer name as arget is often set formation on 3D Colors for 3D

for the vertical hickness is parameter.




DepositType Type of deposit. Parameter options are CONFSNOWFALL, and FILL. The value is set to SNsnowfall deposit.

Face Side of the Wafer to receive the deposit. ParaTOP, BOT, and TOPBOT, for both top and boenclose in quotation marks.

LayerName Name of the layer to be deposited. Any validname enclosed in quotation marks is an accepLayerName. LayerName is often set to the sTarget.

Target Target specifies the 3D model rendering chardeposited layer. You may enter any valid L-Etext enclosed in quotation marks for Target. Tto the same value as Layername. For more inmodel rendering characteristics, see DefiningModels on page 114.

Thickness Any positive decimal number may be entereddimension of the SNOWFALL deposit. This tdeposited on the side(s) specified by the Face



644

highest point on the

tion marks.



DepositType = FILL

As illustrated below, the Thickness of FILL is set from the model at that step for the TOP Face.


Thickness


645

Parameters for FILL deposits are described below.

S Pro Version 3 ed automatically

l override any re text enclosed tware will mes.

ORMAL, LL for a fill

ons are TOP, Do not enclose in

L-Edit layer table entry for me value as



WaferID Identifies the Wafer to be filled. Since MEMsupports just one Wafer, the WaferID is assignand is read-only. The default value of w1 wilentry made for WaferID, where valid entries ain quotation marks. Future versions of the sofsupport multiple wafers and user-assigned na

DepositType Type of deposit. Parameter options are CONFSNOWFALL, and FILL. The value is set to FIdeposit.

Face Side of the Wafer to be filled. Parameter optiBOT, and TOPBOT, for both top and bottom. quotation marks.

LayerName Name of the layer to be deposited. Any validname enclosed in quotation marks is an accepLayerName. Layername is often set to the saTarget.


646

ring ter any valid

on marks for as LayerName. characteristics, 14.

measured from face, or from the face (See the ositive decimal (s) specified by


tion marks.



Target This parameter specifies the 3D model rendecharacteristics of the filled layer. You may enL-Edit layer name as text enclosed in quotatiTarget. Target is often set to the same value For more information on 3D model renderingsee Defining Colors for 3D Models on page 1

Thickness The vertical dimension of the FILL deposit asthe highest point on the Wafer up for the TOPlowest point of the Wafer down for the BOT figure on page 377). Thickness may be any pnumber. The material is deposited on the sidethe Face parameter.




647

Etch

wed by an example


The syntax for the Etch command is presented below, follocontaining valid entries for its parameters.

Syntax

Etch={WaferID=SEtchType=etypeFace=faceMaskName=layerEtchMask=emaskDepth=PAngle=AUndercut=REtchRemoves=layerEtchRemoves=layerLabel=SComment=S

}

Example

Etch={EtchType=SURFACEFace=TOP


648

MaskName = ”Anchor1”

RIFICIAL:

ited during previous

the EtchRemovesre has no setting for

when setting these


EtchMask=INSIDEDepth = 2.5Angle = 87Undercut = 0EtchRemoves = ”ox1”WaferID=”w1”Label = ”Etch Anchor1”Comment = ”Etch Anchor1”

}

Description

There are three types of etches: SURFACE, BULK, and SAC

� SURFACE etches remove material that has been depossteps.

� BULK etches remove parts of the Wafer.

� SACRIFICIAL etches completely remove all bodies onlayers. This etch does not require masking, and therefothe EtchMask or MaskName parameter.

The orientation of the Wafer must be taken into account parameters.


649




he mask setting isSIDE (inclusive) or

metry are removedIDE, areas beneath

conductor masks).strate this effect:



Another consideration for SURFACE etch is whether tinclusive or exclusive. EtchMask may be set to either INOUTSIDE (exclusive).

For EtchMask = INSIDE, areas beneath the mask layer geo(generally used for insulator masks). For EtchMask = OUTSthe mask layer geometry are protected (generally used forBelow, identical masks with differing EtchMask settings illu


650

EtchMask = INSIDE

elow.


EtchMask = OUTSIDE

SURFACE, BULK, and SACRIFICIAL etches are described b

drawn mask

drawn mask


651

EtchType = SURFACE

gle, Undercut, and to OUTSIDE.

er to be etched. one Wafer, the ead-only. The made for sed in quotation

l support multiple

Drawn Mask


The outcome of a SURFACE etch depends on EtchMask, AnDepth. In the diagram below, the EtchMask parameter is set

Parameters for a SURFACE etch are described below.


WaferID This optional parameter identifies the WafSince MEMS Pro Version 3 supports just WaferID is assigned automatically and is rdefault value of w1 will override any entryWaferID, where valid entries are text enclomarks. Future versions of the software wilwafers and user-assigned names.

Depth UndercutAngle

Drawn Mask


652

ACE, BULK, and CE for a surface

options are TOP, m. Do not

uotation marks is eometry on this uded from

. This parameter he material to be wn layout. Do

yers specified in ted by the etch. If the etched layer, pth may be any



EtchType Type of etch. Parameter options are SURFSACRIFICIAL. The value is set to SURFAetch.

Face Side of the Wafer to be etched. ParameterBOT, and TOPBOT, for both top and bottoenclose in quotation marks.

MaskName Any valid L-Edit layer name enclosed in qan acceptable input for MaskName. The gmask defines the area to be etched or excletching.

EtchMask Parameter options are INSIDE or OUTSIDEsets the mask orientation, that is whether tremoved is INSIDE or OUTSIDE of the dranot enclose in quotation marks.

Depth Vertical dimension of the etch. Only the lathe EtchRemoves parameter will be affecthe Depth is greater than the Thickness ofthe layer beneath will not be removed. Depositive decimal number.


653

egrees between FACE etch under quired. In the deler assumes tches.

distance the etch e. For istance the etch ge. Undercut = 0 sk edge for both mal number.

ro Version 3 and on of the re will be no E etches.

this etch step. uotation marks is ere may be

escribing the ress dialog. The

on marks.



Angle The etch Angle is determined in decimal d45 and 90. Angle is not supported for SURMEMS Pro Version 3 and therefore not recurrent version of the program, the 3D Mothat the etch Angle is 90° for SURFACE e

Undercut For EtchMask = INSIDE, Undercut is thefront will extend over the drawn mask edgEtchMask = OUTSIDE, Undercut is the dfront will intrude under the drawn mask edis a sharply defined cut, aligned to the macases. Undercut may be any positive deci

Undercut is not supported under MEMS Ptherefore not required. In the current versiprogram, the 3D Modeler assumes that theUndercut, i.e., Undercut = 0 for SURFAC

EtchRemoves Name of the layer that will be removed byAny valid L-Edit layer name enclosed in qan acceptable entry for EtchRemoves. Thmultiple entries of this parameter.

Label During 3D model generation, this string, dongoing step, will be displayed in the progLabel may be any text enclosed in quotati


654

ilicon wafer of 100s attacked at a muchne of the box is theis etch assumes

TOP face. A cross-

otation marks.



EtchType = BULK

The BULK etch sketched below is of KOH or EDP on a scrystal orientation. The pit is bound by the 111 plane, which islower rate than all other crystallographic planes. The outliminimum bounding box of the mask pattern. ThEtchMask = INSIDE. The etch is viewed from above the section corresponding to the dashed line appears below.

Parameters for the BULK etch are described below.

Comment Comment may be any text enclosed in qu

cross-section line

cross-section


655

Recall that the BULK etch is designed to remove the Wafer material only. Theremeter.

r to be etched. ne Wafer, the ad-only. The made for closed in

ware will support

CE, BULK, and r a bulk etch.

ptions are TOP, . Do not enclose

otation marks is ometry on this ded from etching.

decimal number

ween 45 and 90.


is no need to identify the Wafer with the EtchRemoves para


WaferID This optional parameter identifies the WafeSince MEMS Pro Version 3 supports just oWaferID is assigned automatically and is redefault value of w1 will override any entry WaferID, where valid entries are any text enquotation marks. Future versions of the softmultiple wafers and user-assigned names.

EtchType Type of etch. Parameter options are SURFASACRIFICIAL. The value is set to BULK fo

Face Side of the Wafer to be etched. Parameter oBOT, and TOPBOT, for both top and bottomin quotation marks.

MaskName Any valid L-Edit layer name enclosed in quan acceptable input for MaskName. The gemask defines the area to be etched or exclu

Depth Vertical dimension of the etch. Any positivemay be entered for Depth.

Angle Etch Angle is given in decimal degrees bet


656

ches in MEMS Pro

d over the mask al number. ed to the mask

scribing the ess dialog. The n marks.

tation marks.



Note that Angle and Undercut are supported for Bulk etVersion 3.

Undercut The distance the etching material will extenedge. Undercut may be any positive decimUndercut = 0 is a sharply defined cut, alignedge.

Label During 3D model generation, this string, deongoing step, will be displayed in the progrLabel may be any text enclosed in quotatio

Comment Comment may be any text enclosed in quo


657

EtchType = SACRIFICIAL

r to be etched. ne Wafer, the ad-only. The made for sed in quotation support multiple

ACE, BULK, and ICIAL for a

options are TOP, . Do not enclose

Any valid L-Edit an acceptable ltiple entries of


Parameters for a SACRIFICIAL etch are illustrated below.


WaferID This optional parameter identifies the WafeSince MEMS Pro Version 3 supports just oWaferID is assigned automatically and is redefault value of w1 will override any entryWaferID, where valid entries are text enclomarks. Future versions of the software willwafers and user-assigned names.

EtchType Type of etch. Parameter options are SURFSACRIFICIAL. The value is set to SACRIFsacrificial etch.

Face Side of the Wafer to be etched. Parameter BOT, and TOPBOT, for both top and bottomin quotation marks.

EtchRemoves Name of layer to be removed by this etch. layer name enclosed in quotation marks is entry for EtchRemoves. There may be muthis parameter.


658

escribing the ress dialog. The n marks.

tation marks.



Label During 3D model generation, this string, dongoing step, will be displayed in the progLabel may be any text enclosed in quotatio

Comment Comment may be any text enclosed in quo


659

MechanicalPolish

low, followed by an


The syntax for the MechanicalPolish command is given beexample containing valid entries for its parameters.

Syntax

MechanicalPolish={WaferID=SFace=faceDepth=PThickness=PLabel=SComment=S

}

Example

MechanicalPolish={WaferID=”w1”Face=TOPDepth=23.0 Label=”Mechanical Polish”Comment=”Mechanical Polish”

}


660

Description

p or bottom of the

ither a Depth or apth is truncated offThickness remains

before and afterf the wafer.


MechanicalPolish truncates the specified Depth off the toentire wafer regardless of material type.

The effects of MechanicalPolish can be specified by eThickness, but not both. When a Depth is specified, that Dethe face of the wafer. When a Thickness is specified, that after polishing.

The drawing below gives the profile of a wafer MechanicalPolish. The depth d has been sliced off the top o

Depth = dBEFORE

AFTER


661

In the drawing below, the MechanicalPolish command has sliced material from


the bottom of the Wafer and left Thickness = t.

AFTER

t

tBEFORE


662

Parameters for MechanicalPolish are described below.

e polished. Since the WaferID is fault value of w1 e valid entries are s of the software

names.

ions are TOP or n Version 3. Do

ured from the from the lowest y be any positive

ter the polish. It is r the TOP face BOT face. Any ickness.

bing the ongoing he Label may be



WaferID This optional parameter identifies the Wafer to bMEMS Pro Version 3 supports just one Wafer, assigned automatically and is read-only. The dewill override any entry made for WaferID, whertext enclosed in quotation marks. Future versionwill support multiple wafers and user-assigned

Face Side of the Wafer to be polished. Parameter optBOT. Only one face may be polished at a time inot enclose in quotation marks.

Depth Vertical measure of the material removed, meashighest point of the Wafer for the TOP face, or point of the Wafer for the BOT face. Depth madecimal number.

Thickness Vertical measure of the material that remains afmeasured from the lowest point of the Wafer foand from the highest point of the Wafer for the positive decimal number may be entered for Th

Label During 3D model generation, this string, descristep, will be displayed in the progress dialog. Tany text enclosed in quotation marks.


663

n marks.



Comment Comment may be any text enclosed in quotatio


664

ImplantDiffuse

w, followed by an


ImplantDiffuse is not supported in MEMS Pro Version 3.

The syntax for the ImplantDiffuse command is given beloexample containing valid entries for its parameters.

Syntax

ImplantDiffuse={WaferID=SFace=faceMaskName=layerDepth=PAngle=AUndercut=PTarget=layerSource=layerLabel=SComment=S

}

Example

ImplantDiffuse={WaferID=”w1”Face=TOP


665

MaskName=”NOxide 1”

into a material. ThetchMask = INSIDE

e Depth, Undercut,mplantDiffuse step.. The Undercut andercut sets the extentotice that the actualdrawn mask (shownfile of the diffusion


Depth=4Angle=90Undercut=0Target= “Poly1”Source=”NOxide”Label= “ImplantDiffuse”Comment=”Nwell Source for Implant”

}

Description

This step models the implantation and diffusion of impuritiesresult of this step is similar to the EtchType = SURFACE, Estep except that the etched part is replaced, not removed. Thand Angle parameters model the geometric effects of the IThe Depth parameter represents the vertical junction depthAngle parameters model the lateral diffusion effect. The Undto which the impurities spread over the edge of the mask. Nmask used during fabrication is the boolean negative of the in the diagram). The Angle parameter models the curved proregion as a straight line.


666




Depth

rcut



Some parameters for ImplantDiffuse are illustrated below.

mask

ImplantDiffuse Region

Unde

Angle


667

Parameters for ImplantDiffuse are described below.

to be implanted/ts just one Wafer, read-only. The ade for WaferID, tion marks. ultiple wafers

arameter options d bottom. Do not

drawn on this y valid L-Edit acceptable entry

se. Any positive pth.

ber between 45



WaferID This optional parameter identifies the Wafer diffused. Since MEMS Pro Version 3 supporthe WaferID is assigned automatically and is default value of w1 will override any entry mwhere valid entries are text enclosed in quotaFuture versions of the software will support mand user-assigned names.

Face Side of the Wafer to be implanted /diffused. Pare TOP, BOT, and TOPBOT, for both top anenclose in quotation marks.

MaskName Name of the inclusive mask layer. The areas layer will be affected by ImplantDiffuse. Anlayer name enclosed in quotation marks is anfor MaskName.

Depth Vertical measure of the extent of ImplantDiffudecimal number is an acceptable entry for De

Angle Angle in decimal degrees. Any decimal numand 90 is an acceptable entry for Angle.


668

e targeted Depth is affected.

will extend s a sharply cut may be any

planted/ diffused ed in quotation be multiple

duced into the lantDiffuse step

ayer name entry for Source. characteristics, 14.


tion marks.



Note that only Target is affected by ImplantDiffuse. If thgreater than the Target’s Thickness, the layer beneath is not

Undercut The distance the implanted/diffused material outward from the mask edge. Undercut = 0 idefined cut, aligned to the mask edge. Underpositive decimal number.

Target The name of the layer that will receive the immaterial. Any valid L-Edit layer name enclosmarks may be entered for Target. There mayentries of this parameter.

Source Layer name of the material that is being introTarget. 3D rendering information for the Impis derived from this layer. Any valid L-Edit lenclosed in quotation marks is an acceptable For more information on 3D model renderingsee Defining Colors for 3D Models on page 1




669

Grow

wed by an example


Grow is not supported in MEMS Pro Version 3.

The syntax for the Grow command is presented below, follocontaining valid entries for its parameters.

Syntax

Grow={WaferID=SFace=faceMaskName=layerThickness=PDepth=percentUndercut=PTarget=layerSource=layerLabel=SComment=S

}

Example

Grow={WaferID=”w1”Face=TOP


670

MaskName=”Grow”

etch, oxide growth,row step might beess, and Undercute effect of this stepn in the following


Thickness=7.0Depth=40Undercut=5Target=”Silicon 1”Source=”Silicon Dioxide”Label=”Grow”Comment=”Grow”

}

Description

Grow consolidates the processes of nitride deposition, nitrideand nitride removal into a single command. A typical Glocalized oxidation of silicon (LOCOS). The Depth, Thicknparameters model the geometric effects of the Grow step. Thwith Depth = d, Thickness = t, and Undercut = u is showdiagram.


671

d*t

u


nitride mask

t

silicon

thermal oxide


672

Parameters for Grow are described below.

to be grown. Wafer, the -only. The ade for WaferID, otation marks. ultiple wafers

tions are TOP, Do not enclose in

drawn on this Edit layer name entry for

for the vertical


Parameters Description

WaferID This optional parameter identifies the Wafer Since MEMS Pro Version 3 supports just oneWaferID is assigned automatically and is readdefault value of w1 will override any entry mwhere valid entries will be text enclosed in quFuture versions of the software will support mand user-assigned names.

Face Side of the Wafer to be grown. Parameter opBOT, and TOPBOT, for both top and bottom. quotation marks.

MaskName Name of the inclusive mask layer. The areas layer will be affected by Grow. Any valid L-enclosed in quotation marks is an acceptable MaskName.

Thickness Any positive decimal number may be enteredheight of the growth.


673

to the target as a 0 implies that ds) within the ust be a positive

from the mask ge. Any positive t.

onsumed by the ny valid L-Edit quotation marks entries for

e Target. It is the on for the Grow ce for thermal

tation marks is an ation on 3D

Colors for 3D



Depth Maximum intrusion of the source material inpercentage of the total Thickness. Depth = 5growth embeds itself (or, alternatively, expanTarget to half of the total Thickness. Depth mdecimal number between 0 and 100.

Undercut The distance the growth will extrude outwardedge. Undercut = 0 is aligned to the mask eddecimal number may be entered for Undercu

Target The Target is the material that is reduced or cchemical process that produces the Source. Alayer name may be entered as text enclosed into identify the Target. There may be multipleTarget.

Source Layer name of the material constructed on thprimary reference for 3D rendering informatistep. For example, silicon dioxide is the Souroxide growth on exposed silicon.

Any valid L-Edit layer name enclosed in quoacceptable entry for Source. For more informmodel rendering characteristics, see DefiningModels on page 114.


674


tion marks.





Process Definition Editing the Process Definition

675

access the Processnition in the MEMS Definition on page


Editing the Process Definition

You may graphically edit the process definition. To do this,Definition dialog by selecting 3D Tools > Edit Process DefiPro Palette. For detailed instructions, see Editing the Process149.

Process Definition Process Definition Example: MUMPs

676

UMPs 3 polysilicon using this process


Process Definition Example: MUMPs

The following process definition file describes the MCNC Mlayer process. The form of a particular 3D model createddefinition depends on its specific mask layouts.

ProcessInfo = {Name = ”MUMPS”Version = ”1.0beta”Unit = microns

}Wafer={

MaskName=”substrate”Thickness=5WaferID=”w1”Target=”substrate”Label=”Wafer”Comment=”Wafer”

}Deposit={

DepositType=CONFORMALFace=TOPLayerName=”nitride”Thickness=.6Scf=”c”WaferID=”w1”Target=”nitride”


677

Label = ”Deposit Nitride”


Comment = ”Deposit Nitride”}Deposit={

DepositType=CONFORMALFace=TOPLayerName=”Poly0”Thickness=.5Scf=”c”WaferID=”w1”Target=”Poly0”Label=”Deposit Poly0”Comment=”Deposit Poly0”

}Deposit={

DepositType=CONFORMALFace=TOPLayerName=”ox1”Thickness=2Scf=”.5”WaferID=”w1”Target=”ox1”Label=”Deposit Ox1”Comment=”Deposit Ox1”

}Etch={

EtchType=SURFACEFace = TOPMaskName = ”Dimple”


678

EtchMask=INSIDE


Depth = .75Angle = 87Undercut = 0EtchRemoves = ”ox1”WaferID=”w1”Label = ”Etch Dimple”Comment = ”Etch Dimple”

}Deposit = {

DepositType=CONFORMALFace=TOPLayerName=”Poly1”Thickness=2Scf=”c”WaferID=”w1”Target=”Poly1”Label=”Deposit Poly1”Comment=”Deposit Poly1”

}Etch={

EtchType=SURFACEFace=TOPMaskName=”Poly1”EtchMask=OUTSIDEDepth=4.5Angle=90Undercut=0EtchRemoves=”Poly1”


679

WaferID=”w1”


Label = ”Etch Poly1”Comment = ”Etch Poly1”

}Deposit = {

DepositType=CONFORMALFace=TOPLayerName=”ox2”Thickness=.75Scf = ”.5”WaferID=”w1”Target=”ox2”Label = ”Deposit Ox2”Comment = ”Deposit Ox2”

}Etch = {

EtchType=SURFACEFace=TOPMaskName = ”Poly1-Poly2 Via”EtchMask = INSIDEDepth = 1.5Angle = 87Undercut = 0EtchRemoves = ”ox2”EtchRemoves = ”ox1”WaferID=”w1”Label = ”Etch Poly1-Poly2 Via”Comment = ”Etch Poly1-Poly2 Via”

}


680

Etch= {


EtchType=SURFACEFace=TOPMaskName = ”Anchor2”EtchMask=INSIDEDepth = 5.25Angle = 87Undercut = 0EtchRemoves = ”ox2”EtchRemoves = ”ox1”WaferID=”w1”Label =”Etch Anchor2”Comment = ”Etch Anchor2”

}Deposit = {

DepositType=CONFORMALFace = TOPLayerName = ”Poly2”Thickness = 1.5Scf=”c”WaferID=”w1”Target = ”Poly2”Label = ”Deposit Poly2”Comment = ”Deposit Poly2”

}Etch = {

EtchType=SURFACEFace = TOPMaskName = ”Poly2”


681

EtchMask=OUTSIDE


Depth = 6.75Angle = 90Undercut = 0EtchRemoves = ”Poly2”WaferID=”w1”Label = ”Etch Poly2”Comment = ”Etch Poly2”

}Deposit = {

DepositType=SNOWFALLFace =TOPLayerName = ”Metal”Thickness = .52WaferID=”w1”Target = “Metal”Label = ”Sputter Metal”Comment = ”Sputter Metal”

}Etch= {

EtchType=SURFACEFace =TOPMaskName = ”Metal”EtchMask=OUTSIDEDepth = .52Angle = 90Undercut = 0EtchRemoves = ”Metal”WaferID=”w1”


682

Label = ”Metal Liftoff”


Comment = ”Metal Liftoff”}Etch = {

EtchType=SACRIFICIALFace=TOPEtchRemoves = ”ox1”EtchRemoves = ”ox2”WaferID=”w1”Label = ”Sacrificial Etch”Comment = ”Sacrificial Etch”

}

INDEX

683
INDEX

Numerics3D model

deletion, 119, 178edition, 353export, 120, 180, 378generation, 77importing to ANSYS, 380meshing in ANSYS, 388view, 72, 81, 118, 149viewing in ANSYS, 380

3D Model View toolbar, 1693D Modeler

accelerometer, 138cross-section, 175defining colors for models, 147

INDEX

684

deleting a model, 178


diaphragm, 141error checking, 212exporting 3D models, 180input formats, 143menu bar

File menu, 153Help menu, 167Setup menu, 165Tools menu, 164View menu, 156Window menu, 166

menu bar, 153multiple views, 79output formats, 143palette, 170rotary motor, 136status bar, 173thermal actuator, 134title bar, 152toolbar, 169user interface, 151viewing 3D models, 149

INDEX

685

3D Modeler, 7


3D To LayoutAdd Volumes, 310Create Volumes, 305Delete Volumes, 309Export CIF File, 319Import MEMS, 302, 345Save MEMS, 317

3D To Layout menu, 2983D Tools

Delete 3D Model, 178Edit Process Definition, 185, 663

3D Tools menuDelete 3D Model, 119Edit Process Definition, 116Export 3D Model, 120View 3D Model, 118

3D Tools menu, 116, 145

AAccelerometer, 138

INDEX

686

Add Volumes, 310


Addingvolumes, 310, 356

Alignment macro, 577All angle wire, 88Analog Devices/MCNC iMEMS, 607Analysis

running, 391viewing the results, 392

ANF file format, 144ANSYS

accessing the R.O.M menu, 218adding an element type, 383ANSYS Neutral Format (.anf), 144connection product for SAT 144, 182, 378, 379importing 3D models, 380linear structural analysis, 391links to, 8meshing a model, 388running an analysis, 391setting boundary conditions, 384setting material properties, 382viewing a 3D model, 380

INDEX

687

viewing the results, 392


ANSYS to layoutediting a 3D model, 353limitations, 339

ANSYS to Layout dialog box, 323ANSYS toolbar

LAYOUT, 320Approximation, 420Area-perimeter dielectric isolation test structure, 538Array

Euler colums, 548Guckel ring, 554

BBeam

doubly supported (Euler column), 545linear folded, 532

Bidirectional rotary comb-drive, 508Block place and route

Voir BPRBonding Pad

INDEX

688

generation, 63


Bonding pad, 568Boundary conditions

setting in ANSYS, 384Box

drawing, 94BPR

initialization, 432routing a design, 443

BPR, 7, 430BULK etch type, 202, 206

CChecking

errors in 3D model, 212CIF file

export, 319Circle

drawing, 94Clearing Vertex Information, 130Comb-drive

INDEX

689

bidirectional rotary, 508


generation, 59instantiation, 22linear electrostatic, 496rotary, 511unidirectional rotary (1), 502unidirectional rotary (2), 505

Comb-drive, 561Command tool

accessing, 400resulting schematic object, 405

Command Tool dialog 402Command tool, 398Components

definition, 310Condensation algorithm, 222CONFORMAL deposit, 195, 624Connecting

global nodes, 27Crab-leg

linear (1), 526linear (2), 529

Create Property dialog box, 407

INDEX

690

Create Spline dialog box, 412


Create Volumes, 305Creating

a hole, 121a module, 20a new property, 407a schematic symbol, 472a schematic, 17splines, 125, 415volumes, 305, 353

Crossover test structuretype 1, 541type 2, 543

Cross-sectionview, 175

Cross-section, 81

DDefining

components, 310Delete 3D Model, 119

INDEX

691

Delete Volumes, 309


Deletinga 3D model, 119, 178volumes, 309, 360

Deposit typeCONFORMAL, 195, 624FILL, 199, 632SNOWFALL, 197, 630

Deposit, 194, 622Design

optimization, 450Diaphragm, 141Drawing

a box, 94a circle, 94a curved polygon, 90a spline, 95a torus, 88a wire, 87

Drawing, 85Dual archimedean spiral spring, 535

INDEX

692
EEasy MEMS menu

Plate Release, 121Polar Array, 123

Easy MEMS menu, 121Edit component, 112Edit Process Definition, 116, 663Editing

a 3D model, 353a process definition, 116, 185a process, 663a spline, 127generated layout parameters, 494object properties, 30process steps parameters, 190process steps, 186, 188splines, 429

Element typeaddition in ANSYS, 383

Etch typeBULK, 202, 206SACRIFICIAL, 202, 208

INDEX

693

SURFACE, 202


SURFACE,SURFACE etch type, 203Etch, 201, 635Euler column

array, 548Euler Column, 545Export 3D Model, 120Export CIF File, 319Exporting

a 3D model, 120, 180, 378a CIF file, 319a netlist, 38

Extractinga netlist, 70

FFILL deposit, 199, 632Folded spring

generation, 61instantiation, 23

Folded spring, 564

INDEX

694

Foundry Support, 8


GGenerated layout parameters

edition, 494Generating

a 3D model, 77a comb-drive, 59a ground plate, 62a plate, 58bonding pads, 63folded springs, 61

Global nodesconnection, 27

Ground plategeneration, 62

Ground plate, 566Grow, 657Guckel ring

array, 554Guckel ring test structure, 551

INDEX

695
HHarmonic side drive, 517Help menu, 131Holes

creation, 121

IImplantDiffuse, 652Import MEMS, 302, 345Importing

a 3D model in ANSYS, 380MEMS, 302, 345process definition, 186

Instantiatinga plate, 21comb-drives, 22components, 21folded springs 23voltage sources, 27

Interpolation, 417

INDEX

696
JJournal bearing

type 1, 520type 2, 523

LLayout

extraction, 97LAYOUT button, 320Layout Versus Schematic

Voir LVSL-Edit, 5L-Edit/UPI, 55Library menu

Edit component, 112library palette, 110

Library menu, 110Library palette

editing parameters, 494Library palette, 110

INDEX

697

Library, 8


Linear crab-legtype 1, 526type 2, 529

Linear Electrostatic comb-drive, 496Linear folded beam, 532Linear side drive, 499LVS

extracting schematic, 102launching 105

LVS, 6, 105

MMacros

alignment functions, 577all angle objects approximation, 594concentric circles generation, 598logo generator, 574plate release, 584polar array, 580viewing vertex coordinates and angles, 587

INDEX

698

Material properties


setting in ANSYS, 382MCNC MUMPs

cross-section, 605MCNC MUMPs, 604MechanicalPolish, 209, 647MEMS

import, 302, 345MEMS Layout Palette

using, 57MEMS layout palette 56

Active Elements tab, 55Passive Elements tab, 55Resonator Elements tab, 55Test Elements tab, 55

MEMS Library, 8MEMS Pro

tool flow, 3Meshing

3D model in ANSYS, 388Module

creation, 20MOSIS/CMU, 609

INDEX

699

MOSIS/NIST, 610


Multilayer pad, 557

NNetlist

comparison, 105export, 38extraction, 70simulating from, 40

Nodeslabeling, 32

OObject properties

edition, 30Optimization

examining the output, 467running, 466setting up, 453

INDEX

700

Optimization, 450


Optimizinga design, 450

PPad

bonding, 568multilayer, 557

Plategeneration, 58ground, 566instantiation, 21

Plate Release, 121Plate, 559Polar Array, 123Polygon

drawing (curved), 90Ports

about, 66Process

edition, 663

INDEX

701

Process definition


edition, 116, 185import, 73, 186process steps, 616

Process definition, 611Process step parameter

Deposit, 194, 622Etch, 201, 635Grow, 657ImplantDiffuse, 652MechanicalPolish, 209, 647ProcessInfo, 616Wafer, 191, 618

Process stepsedition of parameters, 190edition, 186, 188

Propertiesview, 69

Propertycreation, 407

INDEX

702
RR.O.M menu

3D To Layout menu, 298R.O.M menu, 218Reduced Order Modeling

Voir ROMReduction algorithm, 235, 281Results

viewing in ANSYS, 392ROM

condensation algorithm, 222reduction algorithm, 235

ROM, 216Rotary comb-drive, 511Rotary motor, 136Rotary side drive, 514Routing

a design, 443

INDEX

703
SSACRIFICIAL etch type, 202, 208SAT file format, 144Save MEMS, 317Saving

MEMS, 317Schematic

creation, 17extraction, 102

Schematic symbolcreation, 472

Schematic toolsCommand tool, 400

S-Edit, 4Show Details button, 492Side drive

harmonic, 517linear, 499rotary, 514

Simulationfrom a netlist, 40using T-Spice, 40

INDEX

704

Simulation, 33


SNOWFALL deposit, 197, 630Spice models, 475Splines

approximation, 420creation, 125, 415drawing, 95edition, 127, 429interpolation, 417understanding, 410

Splines menu 125Create, 125Edit, 127

Springdual archimedean spiral, 535folded, 564

Spring, 377SURFACE etch type, 202

TTechnology

INDEX

705

Analog Devices/MCNC iMEMS, 607


MCNC MUMPs, 604MOSIS/CMU, 609MOSIS/NIST, 610Sandia ITT, 608

Technology file, 328Technology setup, 602Test structure

area-perimeter dielectric isolation, 538crossover (1), 541crossover (2), 543Guckel ring, 551

Thermal actuator, 134Tool Flow 3Tools menu

Clearing Vertex Information, 130Viewing Vertex Angles, 129Viewing Vertex Coordinates, 128Viewing Vertex Information, 129

Tools menu, 128Torus

drawing, 88T-Spice

INDEX

706

launching 39


simulation, 40user interface, 40

T-Spice Pro, 4

UUnidirectional rotary comb-drive

type 1, 502type 2, 505

UPI, 6Utilities, 570

VVertex

clearing information, 130viewing angles, 129viewing coordinates, 128viewing information, 129

View 3D Model, 118

INDEX

707

Viewing


a 3D model in ANSYS, 380a 3D model, 72, 81, 118, 149a cross-section, 175analysis results, 392properties, 69vertex angles, 129vertex coordinates, 128vertex information, 129waveform, 45

Viewing Vertex Angles, 129Viewing Vertex Coordinates, 128Viewing Vertex Information, 129Voltage sources

instantiation, 27Volumes

addition, 310, 356creation, 305, 353deletion, 309, 360

INDEX

708
WWafer, 191, 618Waveform

probing, 43viewing, 45

Wiredrawing, 87

Wire tool, 24

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