sxh189

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PreliminaryPreliminary

Product Description

1

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any StanfordMicrodevices product for use in life-support devices and/or systems.

Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085EDS-101247 Rev D

SXH-1895-2000 MHz Medium Power

GaAsHBT Amplifier

Product Features

Patented High Reliability GaAs HBT Technolo

High 3rd Order Intercept : +39 dBm typ.

at 1960 MHz

Surface-Mountable Power Plastic Package

Applications

PCS, Cellular Systems

High Linearity IF Amplifiers

lobmyS

snoitidnoCtseT:sretemaraP :

Z0 C52=aT,smhO05= stinU .niM .pyT .xaM

PBd1

noisserpmoCBd1tarewoPtuptuOzHM058=f

zHM0691=f

mBd

mBd

0.32

0.32

S12

niaglangisllamSzHM058=f

zHM0691=f

Bd

Bd

5.71 5.91

0.41

S11

RWSVtupnIzHM058=f

zHM0691=f-

1:5.1

1:9.1

PI3

tnioPtpecretnIredrOdrihTzHM058=f

zHM0691=f

mBd

mBd

0.93

0.93

FN erugiFesioNzHM058=f

zHM0691=f

Bd

Bd

0.5

0.5

Id tnerruCeciveD

V8=sV

smho72=saibRecivedV V5

Am 08 001 031

Rht

l-j, )dael-noitcnuj(ecnatiseRlamrehT W/C 801

Stanford Microdevices SXH-189 amplifier is a high efficiency

GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed

in low-cost surface-mountable plastic package. These HBT

MMICs are fabricated using molecular beam epitaxial growth

technology which produces reliable and consistent

performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver

devices for infrastructure equipment in the 5-2000 MHz cellular,

ISM, WLL and narrowband PCS applications.

Its high linearity makes it an ideal choice for multi-carrier as

well as digital applications.

0

5

10

15

20

25

3035

40

45

850 MHz 1960 MHz

Typical IP3, P1dB, Gain

dBm

IP3 IP3

P1dB P1dB

Gain(dB)

Gain(dB)

7/29/2019 SXH189

2/6Phone: (800) SMI-MMIC http://www.stanfordmicro.com

2522 Almanor Ave., Sunnyvale, CA 94085

EDS-101247 Rev D

Preliminary

SXH-189 5-2000 MHz Power Amplifier

Preliminary

34

36

38

40

42

0 3 6 9 12 15

34

36

38

40

42

44

800 825 850 875 900 925 950

20

21

22

23

24

25

800 825 850 875 900 925 950

-35

-30

-25

-20

-15

-10

-5

0

5

800 850 900 950

15

17

19

21

23

25

800 825 850 875 900 925 950

0

20

40

60

80

100

120

140

160

180

0 2 4 6 8 10

25C

-40C

85C

P1dB vs Frequency

MHz

dBm

850 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3

Input/Output Return Loss,

Isolation vs Frequency

MHz

dB

S11

S22

MHz

Gain vs. Frequency

dB

25C

85C-40C

Third Order Intercept vs. Frequency

(POUT

per tone = 11dBm)

MHz

dBm

Third Order Intercept vs Tone Power

POUT

per tone (dBm)

dB

m

S12

25C

85C

25C

85C-40C

Device Current vs. Source Voltage

VS(V)

DeviceCurrent(mA)

-40C

85C

-40C25C

7/29/2019 SXH189



EDS-101247 Rev D

Preliminary


Preliminary

33

35

37

39

41

43

0 3 6 9 12 15

35

37

39

41

43

1930 1940 1950 1960 1970 1980 1990

20

21

22

23

24

25

1930 1940 1950 1960 1970 1980 1990

-35

-30

-25

-20

-15

-10

-5

0

1930 1940 1950 1960 1970 1980 1990

10

12

14

16

18

20

1930 1940 1950 1960 1970 1980 1990

1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3

P1dB vs Frequency

MHz

dBm

MHz

Gain vs. Frequency

dB

dB

Input/Output Return Loss,

Isolation vs Frequency

MHz

S11

S22

25C 85C

-40C

Third Order Intercept vs. Frequency

(POUT

per tone = 11dBm)

MHz

dBm

Third Order Intercept vs Tone Power

POUT

per tone (dBm)

dB

m

S12

25C

85C

25C85C

-40C

-40C

0

20

40

60

80

100

120

140

160

180

0 2 4 6 8 10

25C

-40C

85C

Device Current vs. Source Voltage

VS(V)

DeviceCurrent(mA)

85C

25C

-40C

7/29/2019 SXH189



EDS-101247 Rev D

Preliminary


Preliminary850 MHz Application Circuit

Active Current Feedback Bias Circuit (for 5V supply)

850 MHz Schematic

850 MHz Active Bias Evaluation Board Layout

SXH-189

220

1.8 K9

7509

100 pF5.6 pF

100 pF

33 nH

Rbias=4.3

0.1

F

(SIZE A) 68 pF

1000 pF

Vs = 5V

1

2

3

46

5

(Rohm)

UMZ1N

Z=50 , 12.9

Vdev

Voltage Feed Resistor Bias Circuit (for > 7V supply)

850 MHz Schematic

850 MHz Evaluation Board Layout

SXH-189

100 pF

100 pF

33 nH

Rbias

Vs

5.6 pF

Z=50 , 12.9

180

390

0.1

F

(SIZE A)

1000pF

68pF

33 nHRFoutRFin

100pF100pF

100pF

1000pF

0.1uF

Rbias

33nH 33nH

390 Ohms

180 Ohms

SXH-1895.6pF

STANFORD MICRODEVICESSOT-89 Eval BoardECB-101499 Rev A

68pF

1000pF

0.1 uF

100pF 100pF

33nH

5.6pF

4.3

1.8K

750

220

1

UMZ1N

STANFORD MICRODEVICES

XAMP EVALUATION BOARD

ECB-100xxx- SOT-89

RF IN RF OUT

GND

VCC

seulaVrotsiseRsaiBdednemmoceR

)sV(egatloVylppuS V7 V8 V01 V21

)smhO(saibR 81 72 74 26

gnitaRrewoP W5.0 W0.1 W5.1 W0.2

ycneuqerF 058 zHM

)Bd(niaGlangiSllamS 0.02

)Bd(ssoLnruteRtupnI 8.22-

)mBd(3PItuptuO *7.73

)mBd(Bd1P 0.32

*Note: IP3 performance degraded due to lower

(4.5V) device voltage.

NOTE: Reference Application Note AN-023 for more

information on Active Current Feedback Bias Circuit.

ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE

7/29/2019 SXH189



EDS-101247 Rev D

Preliminary


Preliminary

RFoutRFin

68pF68pF

22pF

1000pF

0.1uF

Rbias

22nH 22nH

390 Ohms

180 Ohms

SXH-189 1.8pF


SOT-89 Eval Board

ECB-101499 Rev A

1960 MHz Application Circuit

Active Current Feedback Bias Circuit (for 5V supply)

1960 MHz Schematic

1960 MHz Active Bias Evaluation Board Layout

SXH-189

220

1.8 K9

7509

68 pF

1.2 pF

22nH

Rbias=4.3

0.1

F

(SIZE A) 22 pF

1000 pF

Vs = 5V

1

2

3

46

5

(Rohm)

UMZ1N

68pF

Z=50 , 45.5

Vdev

Voltage Feed Resistor Bias Circuit (for > 7V supply)

1960 MHz Schematic

1960 MHz Evaluation Board Layout

SXH-18968 pF

22nH

Rbias

Vs

1.8 pF

68pF

Z=50 , 45.5

22nH

1000pF

390

180

0.1

F

(SIZE A) 22pF

1

22pF

1000pF

0.1 uFUMZ1N

220

750

1.8K

4.3

68pF 68pF

1.2pF

22nH


XAMP EVALUATION BOARD

ECB-100xxx- SOT-89

RF IN RF OUT

GND

VCC

seulaVrotsiseRsaiBdednemmoceR

)sV(egatloVylppuS V7 V8 V01 V21

)smhO(saibR 81 72 74 26

gnitaRrewoP W5.0 W0.1 W5.1 W0.2

ycneuqerF 0691 zHM

)Bd(niaGlangiSllamS 9.41

)Bd(ssoLnruteRtupnI 1.21-

)mBd(3PItuptuO *0.83

)mBd(Bd1P 3.32

*Note: IP3 performance degraded due to lower

(4.5V) device voltage.

NOTE: Reference Application Note AN-023 for more

information on Active Current Feedback Bias Circuit.

ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE

7/29/2019 SXH189



EDS 101247 R D

Preliminary


Preliminary

Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a

continuous groundplane on the backside of the board.

DIMENSIONS ARE IN INCHES [MM]

PCB Pad Layout

The part will be symbolized with a XA2

designator on the top surface of the package.

Part Symbolization

Recommended via and mounting hole pattern

(For RF Ground and Thermal considerations)

Part Number Ordering Information

rebmuNtraP leeRrePseciveD eziSleeR

981-HXS 0001 "7

Package Dimensions

XA24

321

Caution: ESD sensitiveAppropriate precautions in handling, packaging

and testing devices must be observed.

Absolute Maximum Ratings

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egatloVeciveD V6

tnerruCeciveD Am002

noitapissiDrewoP Wm0051

rewoPtupnIFR Wm001

erutarepmeTnoitcnuJ C051+

erutarepmeTgnitarepO C58+otC04-

erutarepmeTegarotS C051+otC56-

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1 esaB .nipesaB

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4 &DNG

rettimE

2niPsaemaS

Pin Description

sxh189

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