sunam developed new process named rce-dr -...

SuNAM developed new process named RCE-DR:

The practical highest throughput process

Superconductor, Nano & Advanced Materials

Seung Hyun Moon SuNAM Co., Ltd.

2013. 9. 16.

EUCAS 2013 September 15 – 19, 2013, Genova, Italy

Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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Introduction Requirements from market : performance & price.

Strategy to achieve the requirements : throughput & yield

RCE-DR : The highest throughput unique SuNAM’s process RCE-DR : Amorphous deposition & fast conversion at once.

Understandings of RCE-DR process

SuNAM’s results

Summary

Contents Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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vs.

Paradigm change in Electrical Power Industry

Cu wire Optical fiber

In communication(or IT) industry,

In electocal power industry, Cu wire vs. HTS 2G wire


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Applications of Superconductivity

HTS 2G Wire

NMR

MRI Crystal growth Magnetic seperator

Motor

MagLev

FCL Motor & Generator Transformer

Cable

Fusion


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For real industrialization, …

For practical application of HTS(high Tc superconductor) ceramic material,

high performance and low cost conductor is essential .

It’s a big challenge to make a km long tape using coating technology, but

almost all obstacles have been solved through years.

And now the price & the availability of 2G wire is the real issue for

industrialization. Not only material cost, but throughput and yield is the very

important factors for practical wire production.

“ Throughput” & “Yield”


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Performance

Price Capacity (Availability) Necessary technical breakthrough

Simplified process New processWide web compatible process Large volume ( > 10,000 km/yr-line)

Critical Current (denisty) Magnetic properties (Pinning) Mechanical properties Joint …

Yield

Complex problem of Performance, Price and Capacity Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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Total Cost = Equipments + Labor + Materials

Cost /length = Total cost / Total production length

Total production length = Throughput X Time X Yield

Low materials cost

High Throughput

Engineering / Q.C for high Yield

Which process should we develop? Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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Cost Analysis : what’s the limiting factor? Assume 500 A/cm-width CC & 4 mm width equivalent wire. Assume throughput/single line & 100 % yield.

Considering yield, the minimum cost increases much higher value. In large volume case, material cost & yield is much more important.

Through - put

(m/hr)

Run time/week

(hrs)

Annual Production

(km)

Equipment depreciation/

yr (M$)

Labor cost (M$)

(Depreciation + labor)/length

($/m) ($/kA-m)

50 60 150 1.5 1.5 20 100

100 100 500 2 2 8 40

500 60 1,500 2 2 2.7 13.3

3,000 100 15,000 4 4 0.53 2.7


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Price factors for HTS 2G Wire

Wide web process.

RCE DR : ~ 100 nm/sec or faster (SuNAM)

PLD, MOCVD ~ 10 nm/sec, MOD ~ 1 nm/sec

Throughput means volume production rate.

P = A (processing area) x R (thickness growth rate)

RCE-DR process : easy to scale-up to wide strip.


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If we were to make 100 chips in a wafer, and there are 3 defects, yield can be as low as 97% (loss as high as 3 %) (at most, 88 %)

If there are 3 defects in a 1 km wire and minimum piece-length is 100 m, yield can be as low as 70% (loss as high as 30 %) Thing get worse if customer wants longer piece-length wire Even though we reduce the defect density, customer’s demand for ever-longer wire could over-‘compensate’ our efforts This yield ‘trap’ would persist until we reach 1 km defect-free wire(for many applications) or 2 km wire(for the most of the applications) Or, we need a new definition of yield for CC

80%

70%

Yield is too low?

Keep up QC(quality control) & develop new QC tools.


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RCE- DR (Reactive Co-Evaporation by Deposition & Reaction)


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Semi in-line pilot line for 2G wire

Site area : 5,500 m2, Building area : 1,750 m2, Gross floor area : 3,050 m2. Class < 10,000 clean room area : 1,000 m2 .


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SuNAM’s 2G Wire Architecture – 12 mm width

Hastelloy C276 (Ni-alloy tape) or Stainless Steel-tape

Seed layer (Y2O3) ~ 7 nm

IBAD-MgO layer ~ 10 nm

Homoepi-MgO layer ~ 20 nm

Diffusion barrier (Al2O3) ~ 40 nm

Hastelloy or SUS

Al2O3

Y2O3

IBAD-MgO

Epi-MgO

LaMnO3

ReBCO

Ag

Buffer layer ~20 nm

Superconducting layer (1.2 ~ 1.8 µm)

Protecting layer (0.6 µm)

IBAD (sputter & E-beam)

sputter

RCE-DR

DC sputter

Electro -polishing

Typical Ic ~ > 600 A/12 mm at 77 K self-field (Jc ~ > 4 MA/cm2)

( + Cu electroplating (+ lamination)) * Linear speed of each process : 120 m/hr or more.

or SDP (Solution

Deposition Planarization)


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RCE process

Reactive Co-Evaporation (RCE) : Using inherently least expensive sources High deposition rate can be used & adjustable composition Especially easy to scalable to large deposition area Very promising methods for HTS wafer production : Theva, STI

(Y, Gd, Sm) Ba Cu

RCE-CDR process

RCE

SuNAM develops RCE-DR process.

~ 6 mil. sq. m /year Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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Conventional RCE-CDR process RCE-CDR : Reactive Co-Evaporation

by Cyclic Deposition & Reaction (EDDC(KAIST/ KERI, batch) & STI, R2R(planned))

CDR : Co-evaporation at low O2 pressure followed by reaction in high PO2 in cyclic manner.

Pulsed deposition : low average growth rate.

High speed(> 100 rpm), high temperature(> 800 oC) mechanically rotated drum is required : complexity, cost, difficult to scale up

KAIST/ KERI

LANL/ STI

Massive(> 100’s of kg on scale-up)


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New SuNAM RCE-DR process RCE-DR : Reactive Co-Evaporation

by Deposition & Reaction (SuNAM, R2R) : Patent pending(PCT)

High rate co-evaporation at low temperature & pressure to the target thickness(> 1 µm) at once in deposition zone (6 ~ 10nm/s)

Fast (<< 30 sec. ) conversion from amorphous glassy phase to superconducting phase at high temperature and oxygen pressure in reaction zone

Simple, higher deposition rate & area, low system cost

Easy to scale up :single path SuNAM DR path

(single time)

Conventional CDR path (repeat more than >>1,000

times)


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SuNAM DR path

(single time)

Conventional CDR path

(repeat more than >>1,000 times)

MOCVD PLD

Sputtering

MOD (BaF2 is very Important for High Jc)

MBE

Comparison of various deposition methods Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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Understanding of phase diagram at low PO2

Liquid phase is very important

RCE – DR Process : Phase Diagram Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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RCE – DR Results : XRD θ-2θ

The same batch, PO2 increases.


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The same batch, PO2 increases.

RCE – DR Results : XRD φ-scan (103) Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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R-T & XRD for optimized tape by RCE – DR Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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Electronic Materials & Devices Laboratory Seoul National University Department of Materials Science & Engineering

Stability phase diagram of GdBCO

log PO2(Torr) = 10.85 – 13,880/T(K)

[20≤PO2≤100mTorr]

log PO2(Torr) = 9.263 – 12,150/T(K)

[1≤PO2≤10mTorr]


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Electronic Materials & Devices Laboratory Seoul National University Department of Materials Science & Engineering

GdBCO – Gd211 compatible region

GdBCO – Gd2O3 compatible region

Our understanding of Gd123 Phase diagram Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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Electronic Materials & Devices Laboratory Seoul National University Department of Material Science & Engineering

500 nm

Gd

Ba

Cu O

Cu

Cu

Cu Cu Gd

Ba Cu

O O

Cu Cu

Gd

Ba O

O

L

Gd2O3

GdBCO

Gd2O3

Cu-O

• Very low PO2 zone (~ 10-5 Torr): Amorphous Film

• Lower PO2 zone (~30 mTorr): Gd2O3 + Liquid (< 5 sec)

• Higher PO2 zone (~100 mTorr): GdBCO Film (< 20 sec)

GdBCO growth mechanism: a seeded melt-textured growth!!!

Growth mechanism of the GdBCO film by RCE-DR Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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SuNAM’s Results


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0 200 400 600 800 10000

100

200

300

400

500

Ic

( A /

10 m

m )

Length ( m )

RCE – DR Results on Stainless steel substrate (2011. 10)

Ic x L :

(1) 275A x 1,005m = 277,380 (2) 355A x 920m = 326,600


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0 100 200 300 400 500 600 700 800 900 10000

100

200

300

400

500

600

700

800

900

This shows the average vlaues for each 2 meters.

Ic ( A

/ cm

)

Length ( m )

RCE – DR Results on Hastelloy substrate (2012. 01)

Ic x L :

422A x 1,000m =421,700

Tot.Length Avg.Ic Max.Ic Min Ic 1 sigma (m) (A) (A) (A) (%)

1000.2 692.5 796.2 421.7 10.7


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Development of HTS 2G Wire

(by Dr. Izumi @ ISTEC-SRL)


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QCM Feedback program

RHEED spot Feedback program

Control computer

An appropriate feedback algorithm can keep the shape of the RHEED spot in the

specific range, while QCM monitoring to adjust the e-gun power.

Quality Control : RHEED Vision System Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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0 100 200 300 400 500 6000

200

400

600

800-0.2

0.0

0.2

0.4

0.6

0.8

1.0

I C ( A

/ 12

mm

)

Position ( m )

Norm

alize

d In

tens

ityof

spot

(022

)

1 51 101 1510.0

0.5

1.0

Inte

nsity

(brig

htne

ss)

Position(pixel)1 51 101 151

0.0

0.5

1.0

Inte

nsity

(brig

htne

ss)

Position(pixel)1 51 101 151

0.0

0.5

1.0

Inte

nsity

(brig

htne

ss)

Position(pixel)

QC : RHEED vs. Ic Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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[Start] [End]

50

60

7080

90100

110120

130140

150160

170180

140

150

160

170

180

190

Green

Blue

Red

Quality Control : RCE Vision System

Start color

End color

RCE Vision System will be introduced for increasing the uniformity of composition in RCE-DR process. The control computer takes (RGB) values in three-dimensional vector space which is transformed from the color of the tape surface.

Control the power

Color detection

Is the (RGB) vector in the range?

Yes

No


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QCM Feedback program Control computer

E-gun(30 kW)

CCD camera

Vision feedback program

An appropriate feedback algorithm can keep the color of the tape surface

in the specific range, while QCM monitoring to adjust the e-gun power.


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Quality Control : Visual inspection

c a

b

c

a b

d

e f g

a. 2G CC tape b. Tape support c. Inspection camera

※ Defect information is taken from the binary image. ※ Matlab program converts images into data real-time. 12 mm width can be sliced as 55 lines with the resolution 0.22 mm size.

(1) Original image (2) Intensity image (3) Binary image (1) + (3)

Matrix data image

12 m

m

24.4 m

d. LED light e, f. Guide roller g. Dark room box

• Installation of the inspection equipment for zero surface defect on the silver sputtering process.

• Digitalize the silver sputtered surface of 2G CC tape.


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0 5 10 15 20 250

100200300400500600700800

Ic ( A

/ 12

mm

)

Position ( m )

Optimization properties of GdBCO CC on STS substrate

Section Avg. IC SD min. IC max. IC Uniformity(%) (m~m) (A) SD min-max

60 cm section Continuous IC (A/12mm) 0~23.3 776 10 750 804 98.7% 96.4%

Thickness : ~ 1.32 um

Average Ic = 647 A/cm Jc ~ 4.9 MA/cm2

1sigma ~ 10 A (1.3 %)

( ) 100.

..,.

..% ×

−−=−

C

CC

C

CC

IAvgIMinIAvg

IAvgIAvgIMaxMaxUniformatyMaxMin


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0 10 20 30 400

200

400

600

800

1000

Ic (A

/12m

m)

Length (m)-100 0 100 200 300 400 500 600 700 800 9001000

0.0

5.0x10-6

1.0x10-5

1.5x10-5

2.0x10-5

2.5x10-5

3.0x10-5

Volta

ge (V

)

Current (A)

Average Ic = 742 A/cm Jc ~ 5.3 MA/cm2


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0 100 200 300 400 500 600 700 800 900 10000

100

200

300

400

500

600

700

800

900


Ic ( A

/ cm

)

Length ( m )

RCE – DR Results on Hastelloy substrate

Ic x L : 422A x 1,000m =421,700

Tot.Length Avg.Ic Max.Ic Min Ic 1 sigma (m) (A) (A) (A) (%)

1000.2 692.5 796.2 421.7 10.7

0 100 200 300 400 500 6000

100

200

300

400

500

600

700

800

900

This shows the average vlaues for each 1 m

Ic (

A / c

m )

Length ( m ) Mean Standard Deviation Minimum Maximum

IC ( A ) 510 19.3 452 570

Min-Max Uniformity(%) COV ( % ) COV|min-max| ( % )

88.2 4.5 23.2

( )%100) variationofcient COV(coeffi ×=χσ

( )%100COV min,max,max-min ×

−=

χCC II

CIχσ Mean: , DeviationStandard :


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0 100 200 300 400 5000

100

200

300

400

500

600

700

800

900


Ic (

A / 1

2 m

m )

Length ( m )

Mean Standard Deviation Minimum Maximum

IC ( A ) 594 22.7 519 640


87.5 4.6 20.4

( )%100) variationofcient COV(coeffi ×=χσ( )%100COV min,max,

max-min ×−

=χ

CC II


0 100 200 300 400 500 6000

100

200

300

400

500

600

700

800

900

This shows the average vlaues for each 1 met

Ic (

A / 1

2 m

m )

Length ( m )


IC ( A ) 619 18.8 506 667


81.8 3.6 26.0

RCE – DR Results on Hastelloy substrate Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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0 100 200 300 400 5000

100

200

300

400

500

600

700

800

900


Ic (

A / 1

2 m

m)

Length ( m )


IC ( A ) 678 40.3 542 761


79.9 5.9 32.2


max-min ×−

=χ

CC II


0 100 200 300 400 500 6000

100

200

300

400

500

600

700

800

900

This shows the average vlaues for each 1 m

Ic (

A / 1

2 m

m)

Length ( m )


IC ( A ) 762 28.5 686 810


90.0 3.7 16.4

RCE – DR Results on Stainless steel substrate Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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0 100 200 300 400 5000

100

200

300

400

500

600

700

800

900


Ic (

A / 1

2 m

m )

Length ( m )


IC ( A ) 804 40.0 643 869


80.0 5.0 28.1


max-min ×−

=χ

CC II


0 100 200 300 400 5000

100

200

300

400

500

600

700

800

900


Ic (

A / 1

2 m

m )

Length ( m )


IC ( A ) 726 24.6 614 770


84.6 3.4 21.5


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0 100 200 300 400 5000

100

200

300

400

500

600

700

800

900


Ic (

A / 1

2 m

m )

Length ( m )


IC ( A ) 745 38.9 545 793


73.2 5.2 33.3


max-min ×−

=χ

CC II


0 100 200 300 400 500 6000

100

200

300

400

500

600

700

800

900

This shows the average vlaues for each 1 mete

Ic (

A / 1

2 m

m )

Length ( m )


IC ( A ) 794 17.0 744 832


93.7 2.1 11.1


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0 100 200 300 400 500 6000

50

100

150

200

250

300

Ic ( A

/ 4 m

m )

Length ( m )

joint1 joint2

TOT Mean Standard Deviation Minimum Maximum

IC(A) 253 5.6 236 264 Unif|min-max| COV COV|min-max|

93.2 2.2 11.2

0 50 100 150 200 2500.0

1.0x10-5

2.0x10-5

3.0x10-5

4.0x10-5

5.0x10-5

6.0x10-5

7.0x10-5

Joint Resistance(Rj) = 24 nΩ

Volta

ge (V

)

Current (A)

0 50 100 150 200 250 3000.0

1.0x10-5

2.0x10-5

3.0x10-5

4.0x10-5

5.0x10-5

6.0x10-5

7.0x10-5

Joint Resistance (Rj) = 38 nΩ

Volta

ge (V

)

Current (A)

Typical overlap joint length is 100 mm ~ 150 mm.

Ic / 4mm and joint resistance for brass laminated CC Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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Flux pinning improvement by controlling Gd2O3 particles

0.2 µm

- 840°C sample :

Particles are aligned with arrow direction.

0.2 µm

- 880°C sample :

Particle size is bigger & randomly located.

41 Seoul National University Department of Material Science & Engineering


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42 Seoul National University Department of Material Science & Engineering

Angular dependence of Jc at 77K & 65 K(840, 860, and 880°C)

0 30 60 90 120 150 180 210 2400.20.40.60.81.01.21.41.61.82.0 840oC

860oC 880oC

H//ab77K, 1T

Angle (deg.)

J c (MA/

cm2 )

0 30 60 90 120 150 180 210 2400.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

840oC 860oC 880oC

H//ab77K, 3T

Angle (deg.)

J c (MA/

cm2 )

0 30 60 90 120 150 180 210 240

0.5

1.0

1.5

2.0

2.5

3.0

3.5H//ab 840oC

860oC 880oC

65K, 1T

Angle (deg.)

J c (MA/

cm2 )

0 30 60 90 120 150 180 210 2400.0

0.5

1.0

1.5

2.0

2.5 840oC 860oC 880oC

H//ab65K, 3T

Angle (deg.)

J c (MA/

cm2 )

30 A/cm

100 A/cm

100 A/cm

200 A/cm


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0 30 60 90 120 150 1800.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

No

rmali

zed

Ic ( A

/ M

ax.Ic

)

Angle ( degree )

RCE-DR : in B-field Properties add APC (Short sample)

77 K, 6300 gauss


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Simplified buffer layer – Solution Deposition Planarization (SDP)

10 20 30 40 50 600

10000

20000

30000

40000

50000

Inte

nsity

(cps

)

2θ (deg.)

Ni(1

11)

Cu2O

Gd2O

3

(003

)

(006

)

(001

)

(002

)

(004

)

(005

)

MgO

(002

)

Ni(0

02)

(007

)

14 16 18 20 22 240

5600

11200

16800

22400

28000 GdBCO(005) FWHM=1.60o

Inten

sity (

a. u.

)

ω (degree)-50 0 50 100 150 200 250 300 350

0

1100

2200

3300

4400

5500GdBCO(103)FWHM=3.23o

Inten

sity (

a. u.

)

φ (degree)

RMS roughness: 0.54nm(2) 0.72nm(3)

RMS roughness: 70 nm(1)

SDP

Structural properties of GdBCO on SDP substrate

Furn

ace

Chemical solution

bath

Dip coating Process


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GdBCO

50nm 50nm

STS

Y2O3-ZrO2

SDP layer : ~ 0.4 um-thick

50nm

Substrate SDP layer

LMO/MgO/IBAD

GdBCO

GdBCO

CuO

Ic=523 A / 12mm Jc ~ 3.4 MA/cm2

0 100 200 300 400 500 6000.0

5.0x10-6

1.0x10-5

1.5x10-5

2.0x10-5

2.5x10-5

3.0x10-5

Volta

ge (V

)

Current (A)

523 A

Simplified buffer layer – Solution Deposition Planarization (SDP) Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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4T, 203 mm diameter RT bore cryogen free magnet

Superconducting magnet parameter

Conductor Width; Thickness [mm] 4.1(12.1); 0.21(0.1)

Ic @ 20 K, B⊥=1.5 T [A] > 180A

Coil

# of DP coils,

(4mmW; 12mmW) 28; 2

turn per pancake 133

Winding i.d.; o.d.; [mm] 245(274); 300.9

Overall height [mm] 452

Conductor per DP

(4mmW; 12mmW) [m] 232; 255

Total Conductor

(4mmW; 12mW) [m] 6,496; 510

Operation

Bc [T] 4.0

Iop [A] 205

Top [K] 8

Cryostat Clear bore [mm] 203

Cold bore [mm] 245

72hr to 8K

(1P- LS3-06, Mon. Afternoon)


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Development of Ic (B, T, θ) measurement system

Parameters Specification

Maximum current 1000A

Temperature 12K ~ 70K

Angle 0~135º

Sample length, width 30 ~ 90mm, <15mm


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Direction of Technology Development in the Future Price Reduction

100

25 10

(Unit: USD / kAm)

12 mm 120 mm 360 mm Width :

Capacity : 1,000 km/y 15,000 km/y 75,000 km/y

CAPEX* :

* Capital Expense : Required Investment in Production Line

$ 7 Mil. $ 20 Mil. $ 30 Mil.

Max Revenue : $ 20 Mil. $ 75 Mil. $ 150 Mil.

Achievable with Existing Line of

SuNAM

“Increasing Demand for HTS 2G wire has surpassed the

supply”

“For market entrance $ 50 / kAm is the threshold ”

“Price Reduction will ignite an exponential growth of demand for HTS 2G wire”

“High throughput, low material cost, High yield is 3

Critical Success Factor”


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Stainless Steel

(100 µm)

Al2O3 (40 nm)

Y2O3 (7 nm)

IBAD-MgO (10 nm)

Epi-MgO (20 nm)

LaMnO3 (20 nm)

GdBCO (1.35 mm)

Ag

Low cost(~1/5 of Hastelloy), high performance non-magnetic STS substrate

Textured buffer based on IBAD-MgO Fast & reproducible process Because of small thickness(~ 100 nm total), process

cost is relatively low Possible to use various kind of substrates

Superconducting layer : RCE-DR Low material cost, high throughput process Easy to scale up Typical Ic : ~ > 150A/4 mm width (t = 1.3 ), & max. Ic

~ 318 A/4 mm width (t = 1.8 )

High Ic tape (for ac & dc cables) & good in B-field property tape with APC(for rot. machines & magnets) are available.

Summary Paper based on this presentation was published by Superconductor Science & Technology (SuST, IOP) 27, No. 4, 044018 (2014)IEEE/CSC & ESAS SUPERCONDUCTIVITY NEWS FORUM (global edition), October 2013

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Acknowledgement

SuNAM : W. S. Jeong, J. H. Lee, H. K. Kim, G. H. Choi ,C. Y. Jang, J. S. Yang,

G. H. Shin, H. W. Cho, B. I. Park, Y.S. Yoo, J. H. Lee2, G. H. Lee, D. G. Park, D.

W. Song, S. J. Ahn, W. G. Cho, J. W. Choi, S. W. Yoon, S. J. Ahn, G. T. Jang, W.

Kwon, H. J. Lee.

Seoul Nat’l Univ. : J. W. Lee, S. M. Choi, S. I. Yoo.

KERI :H. S. Ha, S. S. Oh.

Korea Polytech. Univ. : G. W. Hong.

Stanford University : R. H. Hammond.

iBeam Materials : V. Matias.


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Thanks for Attention !

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sunam developed new process named rce-dr -...

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