summary of existing prototypes
DESCRIPTION
Summary of existing prototypes. Summary of existing prototypes. AMS H35 HVPixel monolithic test detector – continuous readout with time measurement (one system available, chips: todo ) CCPD1 capacitive coupled pixel detector – continuous readout wtm - PowerPoint PPT PresentationTRANSCRIPT
Ivan Peric, Monolithic Detectors for Strip Region 1
Summary of existing prototypes
Ivan Peric, Monolithic Detectors for Strip Region 2
Summary of existing prototypes
• AMS H35• HVPixel monolithic test detector – continuous readout with time measurement• (one system available, chips: todo)• CCPD1 capacitive coupled pixel detector – continuous readout wtm• (one system available, chips: todo)• CAPSENSE/CAPPIX edgeless capacitive coupled pixel detector – continuous readout wtm• (one system available, chips: todo)• HVPixelM monolithic test detector - rolling shutter RO• (one system available, chips: todo)• AMS H18• MuPixel monolithic test detector – continuous readout with time measurement• (one system available, chips: todo)• HV2FEI4 CCPD detector• (several systems available, chips: todo)
Ivan Peric, Monolithic Detectors for Strip Region 3
Summary of existing prototypes
HVPixel – CMOS in-pixel electronics with hit detectionBinary RO
Pixel size 55x55μmNoise 60e
MIP seed pixel signal 1800 eTime resolution <100ns
CCPD2 (CAPPIX) - capacitive coupled pixel detector
Pixel size 50x50μmNoise 30-40e
Time resolution <300nsMIP SNR 45-60
HVPixelM chip - frame mode readoutPixel size 21x21μm
4 PMOS pixel electronics128 on-chip ADCs
Noise: 21e (lab) - 44e (test beam)MIP signal - cluster: 2000e/seed: 1200eTest beam: Detection efficiency >98%
Seed Pixel SNR ~ 27Cluster signal/seed pixel noise ~ 47
Spatial resolution ~ 3 m
Irradiations of test pixels60MRad – MIP SNR 22 at 10C (CCPD1)
1015neq MIP SNR 50 at 10C (CCPD2)
Monolithic detector -frame readout
Capacitive coupled hybrid detector
Monolithic detector – continuous readout
with time measurement
Technology 350nm HV – substrate 20 cm uniform
CCPD1 - capacitive coupled pixel detectorPixel size 55x55μm
Noise 70eTime resolution <100ns
MIP SNR 25
Ivan Peric, Monolithic Detectors for Strip Region 4
HVPixel
Monolithic matrix CCPD matrix (sensor)
CCPD matrix (readout)
Ivan Peric, Monolithic Detectors for Strip Region
CCPD1
Sensor pixels
Readout pixels
Chip A
Chip B
Signal transmission
wire bonds
chips
Monolithic matrix CCPD matrix (sensor)
CCPD matrix (readout)
Electrodes
Standard CCPD55x70 µm pixel size
5
Ivan Peric, Monolithic Detectors for Strip Region 6
CCPD1
Ivan Peric, Monolithic Detectors for Strip Region
Edgeless CCPD (CAPSENSE/CAPPIX)
0 500 1000 1500 20000.0
0.2
0.4
0.6
0.8
1.0
Effi
cien
cy
Signal [e]
Efficiency - window 800ns
CAPPIX/CAPSENSE edgeless CCPD50x50 µm pixel size
Pixel matrix efficiency:Detection of signals > 350e possibleMIP signal ~ 1800 e
7
Ivan Peric, Monolithic Detectors for Strip Region
HVPixelM
The type 1 chip HVPixelM: Simple (4T) integrating pixels with pulsed reset androlling shutter RO21x21 µm pixel size
Seed pixel SNR 27, seed signal 1200e, cluster 2000e
Spatial resolution 3-3.8µm
Efficiency vs. the in-pixel position of the fitted hit.Efficiency at TB: ~98% (probably due to a rolling shutter effect)
Ivan Peric, Monolithic Detectors for Strip Region 9
Irradiation with protons at KIT (1015 neq/cm2 and 300MRad)
0.0 0.2 0.4 0.6 0.80.0
0.2
0.4
0.6
0.8
1.0
~num
ber o
f sig
nals
signal amplitude [V]
RMS Noise, 2.4mv (40e) 55Fe, 100mV (1660e) 55Na, 220mV (3750e)
Temperature -10CIrradiated with protons to 1015n
eq
0.0 0.2 0.4 0.6 0.80.0
0.2
0.4
0.6
0.8
1.0
~num
ber o
f sig
nals
signal amplitude [V]
RMS Noise, 2.8mv (77e) 55Fe, 60mV (1660e) 55Na, 180mV (4980e)
Temperature 10CIrradiated with protons to 1015n
eq
0.0 0.2 0.4 0.6 0.80.0
0.2
0.4
0.6
0.8
1.0
~num
ber o
f sig
nals
signal amplitude [V]
RMS Noise, 13mv (270e) 55Fe, 80mV (1660e) 55Na, 200mV (4150e)
Temperature 20CIrradiated with protons to 1015n
eq
55Fe and 22Na spectrum, RMS noiseIrradiatedTemperature 20CRMS Noise 270 eSNR = 15
55Fe and 22Na spectrum, RMS noiseIrradiatedTemperature 10CRMS Noise 77 eSNR = 64
55Fe and 22Na spectrum, RMS noiseIrradiatedTemperature -10CRMS Noise 40 eSNR = 93
55Fe
22Na
Ivan Peric, Monolithic Detectors for Strip Region 10
Irradiation with x-rays (50 MRad)
600 700 800 900 1000 11000.0
0.2
0.4
0.6
0.8
1.0
resp
onse
pro
babi
lity
signal amplitude [e]
Response probabilityfit: sgma = 72e, mean = 750eNot irradiatedRoom temperature
500 600 700 800 900 10000.0
0.2
0.4
0.6
0.8
1.0
resp
onse
pro
babl
ility
signal amplitude [e]
Response probabilityfit: sgma = 83e, mean = 610eIrradiated with x-rays to 60MRadTemperature 5CNoise
Before irradiationRoom TemperatureNoise 72e
NoiseAfter irradiationTemperature 5CNoise 83e
0 20 40 60 80 100 1200
50
100
150
200
250
300
350
400
NoiseRoom temperature annealiingday 0: irradiation with x-rays to 60MRadday 5: 24 hours at 80C
nois
e [e
]
annealing time [days]
Noise at room TemperatureVs. annealing time
Ivan Peric, Monolithic Detectors for Strip Region
MuPixel
11
92µm
Ivan Peric, Monolithic Detectors for Strip Region
MuPixel (RO-cell)
12
TS DRAMAddress ROM
CMOS digital part
Comparator
Coupling capacitorDAC and SRAM7µm
46 µm
Ivan Peric, Monolithic Detectors for Strip Region
MuPixel
13
0 200 400 600 800 1000 1200 14000
50100150200250300350400450500550600650700750800850
Inpu
t ref
erre
d th
resh
old
[e]
Pixel position
450 500 550 600 650 700 750 8000
50
100
150
200
250
Num
ber o
f pix
els
Input referred threshold [e]
Fir center 643 eSigma 50 e
700 800 900 1000 1100 12000
100
200
300
400
500
Num
ber o
f pix
els
Signal for full efficiency [e] 800 1000 1200 1400 1600 1800 2000 2200
0,0
0,2
0,4
0,6
0,8
1,0
mu 1934 esig 57 e
Res
pons
e pr
obab
ility
Inout referred threshold [e]
Threshold tune not optimal(changed in the new version)
Ivan Peric, Monolithic Detectors for Strip Region
MuPixel test beam
• Test-beam measurement February 2014 DESY• Performed by our colleagues from Institute for Physics
14
Ivan Peric, Monolithic Detectors for Strip Region
MuPixel test beam
• Test-beam measurement October 2013 DESY• Performed by our colleagues from Institute for Physics
15
80ns
Probably caused by indirect hits
Ivan Peric, Monolithic Detectors for Strip Region
HV2FEI4
16
• HV2FEI4
2
3
1
2
3
1
CCPD Pixels
Ivan Peric, Monolithic Detectors for Strip Region
HV2FEI4
17
• Standard pixels• Pixel efficiency measurement• For every pixel efficiency and number of noise hits are measured• No noise hits observed• About 99% pixels detect signals of ~1025 -1125 e.
800 900 1000 1100 1200 13000
100
200
300
400
500
600
700
800
Pix
el n
umbe
r
Charge detected with 100% efficiency [e]
No pixel has noise hits
800 1000 1200 1400 16000
100
200
300
400
500
600
700
800
Num
ber o
f Pix
els
Signal seen with 100%ed efficiency [e]
99% pixels measure signals of 1050e with "100%" efficiency
Ivan Peric, Monolithic Detectors for Strip Region
HV2FEI4: segmented strip measurements
18
• Analog encoding of pixels positions in the case of the segmented strip readout
Amp
Monitor
Chip
Oscilloscope
Th1
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,80
100
200
300
400
500
600
700
800
Cou
nts
Measured voltage [V]
Analog addresses
Fe55
Absorber
Ivan Peric, Monolithic Detectors for Strip Region
HV2FEI4: neutron irradiation 1015 neq/cm2
• No evidence of signal decrease after 1015 neq/cm2
19
0,00 0,05 0,10 0,15 0,20 0,25 0,300
2000
4000
6000
8000 90Sr spectrumrecorded by irradiated chip (1015n
eq/cm2)
Num
ber o
f sig
nals
[V]
Amplitude [V]
0 1000 2000 3000 4000 5000 6000 7000 80000
2000
4000
6000
800090Sr spectrumrecorded by irradiated chip (1015n
eq/cm2)
Num
ber o
f sig
nals
[V]
Amplitude [e]
Ivan Peric, Monolithic Detectors for Strip Region
HV2FEI4: x-ray irradiation to 862 Mrad
20
• CCPD2 implements three pixel types, fully rad hard, partially rad hard and a simple pixel that uses positive feedback and has a CMOS comparator
• A detector has been irradiated to 862 Mrad with x-rays. (chips on during the irradiation, 2 hours of annealing at 70C after each 100Mrad)
• Result for one partially rad hard pixel: input referred noise before irradiation 25mV (90 e)• Input referred noise after irradiation 40mV (150 e) at room temperature
862 Mrad90e 150e
Ivan Peric, Monolithic Detectors for Strip Region
HV2FEI4: test beam
21
• Test beam
Threshold tune not optimal(changed in the new version)