subramani kengeri | cto and vice president, client...
TRANSCRIPT
Enabling SoC differentiation through collaborative ecosystemSubramani Kengeri | CTO and Vice President, Client Solutions
Japan SOI Design Workshop
Oct 25th 2018
FDX™: From Vision to Reality
Technology Debut
True
differentiation
Industry AdoptionInspiring novel system solutions
Production SuccessDelivering to the promise
2
2016
2017
2018
Ultra-low voltage and lower junction
capacitance (TOPS/W)
Interfaces and customized MAC
Edge AI/ML
Superior mmW with integrated
FEM for 5G
Analog/MS and 2.5GHz A53 for embedded MPU
Mobile
System-level reliability benefits;
ABB+AVS and aging comp
Radar & imaging for ADAS/Vision
Auto
Lowest active and leakage power; only 36 masks
Integration of PA, Switch, PMIC, and eMRAM
IoT
Integration of FEM, TRX, ADC,
DFE for 5G
Rugged w/ low power density,
thermal mgmnt, and better SER
5G/Networking
FDX™ is winning in growth markets…
3
4
…Now 55 client DWINs across the world
AI/ML
(Edge-inference)
IoT/Connectivity
(WPAN, Cellular IoT)Automotive
(Radar, MCU, Vision)
Networking
(5G, Optical, Sat Comm)
U.S.
17
Europe
19
Asia
14
Japan/Korea
5
Mobile/Embedded
(5G/4G, WiFi, APU)
GLOBALFOUNDRIES Surpasses $2
Billion in Design Win Revenue on
22FDX® TechnologyWith 50 client designs and growing, 22FDX
proves its value as a cost-effective solution for
power-sensitive applications
Strong market traction transitioning from evaluation to production
5
FDX™ ramp is just starting → 17 production tape-outs by 2018 and on-track for 50 by end of 2019
172
Early Engagement
+27%Increase in
Customers Past Discovery Phase
from 2017
143
Design Kit Downloads
+40%Increase in
Customers Who Downloaded Latest
PDKs from 2017
106
Foundation IPDownloads
+47%Increase in
Foundation IP Downloads from
2017
94Client test designs
+169%Increase in
Customers on MPWs from 2017
50Tape-outs by
EoY 2019
+194%Increase from 17 tape-outs in 2018
22FDX® High product yields across a range of applications
6
• Up to 97% yield
• >500MHz at 0.4V w/ ABB
Low-voltage
compute
• >84% yield
• 500hr HTOL pass
Auto MCU
• 96% yield
• Functional at module level
• Parts shipped
Mobile/RF
• Up to 98% yield
• 0.04#/in2/layer B-E D0
Low-voltage
compute
• 144Mb HD SRAM
• 89% yield
Low-voltage
compute
• Boots and runs 800MHz
• DDR4, PCIe
• Static body-bias with OTP
Networking processor
• 95% yield
• Over 800MHz at 0.4V w/ FBB boosting
Low-voltage
compute
Production Proven
✓Product D0 meets target
✓Vdd from 0.4V to 0.8V
✓Adaptive and static body-bias
✓Die size <5mm2 to >115mm2
✓Up to 144Mb of HD SRAM
✓Foundation & complex IP
22FDX® silicon proof-point: Arm® Cortex®-A53 w/ body-bias
7
2.5GHz performance for demanding applications
• Arm Cortex-A53 measured on silicon
• Performance-optimized implementation w/ body-bias
• Raw performance (i.e. w/o BB)
• 2.38GHz @ TT/0.9V/85C
• Boosted performance (i.e. w/ BB)
• 2.53GHz @ TT/0.9V/85C
• Validation of libraries, memories, and analog IP
TT, 0.9V, 85CFmax [GHz]
Simulated Measured
VBB=0V 2.13 2.38
VBB=0.9V 2.39 2.53
C-A53
Single core
22FDX®: Industry Benchmark for Ultra-Low-Power Applications
FDX advantages:
• Performance tunability → 5 independent Lg values
• ULP library optimized for 0.4V operation
• Advanced Body Bias flows for variability reduction
• Ultra Low Power SRAM: 5x leakage reduction
8Industry-leading low power solution at low-V operation
0.4V 4-bit Adder (A/I, crypto)
To
tal
Po
wer
M4 IoT Benchmark
>10x dynamic range in leakage
3x power reduction w/ DVFS + Body Bias
Leakag
e (
TT,
25C
)
Frequency (TT, 25C)
22FDX®: Unlocking the Power of Body Bias at 0.4V OperationBoost and Trim options provide maximum flexibility for differentiated design applications
Variation Reduction through FBB Trimming
Traditional corner
With Trim
Max Frequency
Energy per MHz
Delay
Pro
bab
ilit
y
ULP Library @ 0.4V
Mode Use Case
Forward Body
Bias Boost
Dynamic frequency increase for
performance-sensitive applications
Forward Body
Bias Trim
Static compensation of process variation
for energy-efficient computing
Zero BB FBB Boost FBB Trim
Boost mode: 2x f_max increase
Trim mode: 1.6x f_max increase at 18% lower power per cycle
-18%
22FDX® silicon proof-point: 5G 28GHz differential PA
10
High efficiency, high gain amplification
High Psat
Design
Measured
High PAE
Design
Measured
Stacking 3-Stack PA 2-Stack PA
S21 peak freq (GHz) 27.8 29
IDDQ (mA) 15.9 15.8
Gain (dB) 12.4 12.7
P1dB (dBm) 17.4 15.8
Psat/P3dB (dBm) 18.2 16.4
PAE_Psat-6dB (%) 18.3 20.8
PAE_peak (%) 30.2 41.0
S11 -10.6 -9.9
S22 -2.1 -1.2
Ruggedness Passed 18 dBm 15 dBm
PA (2-Stack) Schematic
• All designs metal stack # 11• Ruggedness stress tested at VSWR 5:1; Tests ongoing
22FDX enables BiC PA performance for integrated RF SoC
eMRAM: versatile, scalable, non-volatile memory
11
Embedded non-volatile memory for MCU and IoT
eFlash eMRAM
Node 40nm 22FDX®
Area 1X 0.7X
RD/WT Perf. 10ns / 1000ns 25ns / 200nm*
15ns / 40ns**
Active Energy 10-1000pJ 1~100pJ
Standby Power 100-500uW <50uW
Masks 12+ 3
MPW Readiness Now Now
Production Now 1H’19
5X Reflow Support Yes Yes
*MRAM-F Flash interface performance 25 / 200ns; **MRAM-F SRAM interface performance 15ns /40ns
Yellow : Better than eFlash
22FDX®
+ eMRAM+ RF
Low Vdd and Power
Fast ON/OFF
High Speed
Connectivity
5G UE
Integrate FEM, TRX with beam-forming architecture
5G Infrast.
Integrate FEM, TRX, ADC/DAC,DFE
NB-IoT / Cat-M
Integrate up to 5 chips into single-die and lower BoM
IoT MCU
Co-integrate ULL & ULP w/ foundry proven RF IP
Auto Radar
Long- and short-range radar w/ DSP, MCU, eNVM
22FDX® enables disruptive architectural innovations
12
Up to 50% module cost and power savings is possible
22FDX®
22FDX®
22FDX® 22FDX®
22FDX®
FEM
Base-
band
TRX
RF
Base-
band
FEM
PM
IC
FEM
Base-
band
TRX
ADC/
DAC
DFE
FEM
DSP
MCU
TRX
NVM*NVM*
*NVM → Embedded MRAM for 22FDX**BLE → IP available from Imagination
PM
IC ULP
MCU
WiFi/
BLE**
PM
ICSensor
Hub
ULL/
AON
Inte
rfa
ce
s
NVM*
Body bias empowers customer products NOW
13
Enabled by industry’s first body-bias support ecosystem
FoundationIPs
Standard Cells
Memory
Design Methodology
Reference Design Flow
Customer Products
Bo
dy-b
ias E
nab
led
4 out of 10 tape-outs already enabled for body-bias
Body-bias Generator
Body-bias Controller
PVT Monitors
OTP Memory
14
Client Solutions: Enabling GLOBALFOUNDRIES Clients to Innovate, Differentiate and Lead
T/O ProtoT/O
ReadinessMask
Design
Readiness
Functionality
Yield
Learning
ProductionRisk Prod/
RWEOL
Evaluation
/DWDiscovery
Leveraging GLOBALFOUNDRIES broad offerings and channelizing technical expertise to offer compelling and timely solutions
to Clients, while ensuring highest Quality of Service
Client advocate to internal R&D, TD, OM and PDK Enablement teams to optimize platform offering
Client Solutions team: ~2000 Man-Years Experience
Support: Discovery to Prototyping
Expertise (Partial list):IP/SoC Design, Applications Engineering, EDA Methodology, Process, PDK, Modeling, Design Rules, Back-Bias Implementation
Our newest partner programs: Differentiation enablers
15
Expedite & simplify FDX design
7 542016 Q3 Today
7 162018 Q1 Today
EDA
IP
ASIC
System IP
Design Services
OSAT
Embedded Software
Streamline & differentiate RF design
Design
Services
EDA TEST
IP
OSAT
22FDX® Comprehensive Foundation IP: Logic & Memory
Standard Cell Libraries
Memory Compiler
Description
High
PerformanceLow-Power
Ultra-Low
Power
Ultra-Low
Leakage
IP
Provider
1-Port Register File
(1RW)
✓ ✓ ✓ Invecas
MobileSemi✓ ✓ ✓
2-Port Register File
(1R/1W)
✓ ✓
Invecas
✓ ✓ ✓
Single Port SRAM
(1RW)
✓ ✓ ✓
✓ ✓
✓
Dual-Port SRAM (2RW) ✓
Pseudo-2-Port SRAM
(1R/1RW)✓ ✓
Via ROM ✓ ✓
Memory Compiler Portfolio (20 Compilers) OTP & NVM
IP Description IP Provider
eFuse GlobalFoundries
Antifuse Sidense (Synopsys)
OTP I-fuse (0.8v & 0.4V) Attopsemi
OTP XPM Kilopass (Synopsys)
OTP Neofuse eMemory
eMRAM GlobalFoundries
GPIO & Body-Bias IP
IP Description IP Provider
GPIO 3.3V (Inline/Staggered)
Invecas
GPIO 1.8V (Inline/Staggered)
GPIO 3.3v/5v Tolerant
Process Monitor
Adaptive Body Bias Controller
Body Bias Generator
Library Description VTs IP Provider
Low Power 7.5T Library (ULP) : 0.4v, 0.5v, 0.65v, 0.8v support
▪Base, ECO, Low Power Cells
▪Multibit support
SLVT/LVT
InvecasLow Leakage Dense 8T ULL Library : 0.8v support
▪Base, ECO, Low Power CellsUHVT
Dense 8T : 0.65v, 0.8v, 0.9v support
▪Base, ECO, High Performance, Low Power Cells
▪Multi-bit flops, Dense AOI / OAI / Flip-Flop
SLVT / LVT
RVT / HVT
22FDX®: Analog and Interface IP
IP Type IP Description IP Provider
GP PLL GP Wide-Range PLL Invecas, Perceptia
Fractional PLL Upto 3GHz PLL Invecas, Perceptia
Temp SensorTemperature Sensor +/- 1.5%; Process
Monitor Invecas, Innosilicon
Data Converters Mult-ipurpose ADCs/DACsInvecas, Synopsys
Innosilicon, IQ Analog
Body Bias Gen Body Bias (Static / Adaptive) Invecas, Dolphin
Voltage Regulators
1.8V, 3.3v, 5V
LDO Reg, Buck Switching Reg, Low
Leakage Reg
Dolphin IntegrationPOR/BOR Circuit Power on Reset / Brown Out Reset
RTC with OSC Real Timeclock with OSC support
Power Switch Programmable Current Switch
LVDS LVDS Differential IO Invecas
I2C IO Open Drain (5V) Invecas
eFPGA Embedded FPGA CoresQuickLogic, Flexlogix,
Menta
IP Type IP Description IP Provider
DPHY MIPI DPHY (CSI2, DSI) 4 Lanes Invecas, Innosilicon
12.5G Multi-Protocol
SERDES
PCIe 1/2/3, USB3.0/3.1, SATA,
XAUI, 10G-KRInvecas
25G Multi-Protocol
SERDES
PCIe 1/2/3/4, USB3.0/3.1, XAUI,
SATA, 10G-KR/KX4, 1000 Base
KX, CEI, CPRI
Invecas
PCIe Gen 2/3.1 PHY PCIe 2.0 and 3.1 PHY Synopsys
USB2 PHY USB2.0 HOST and OTGSynopsys, Invecas,
Innosilicon
USB3 PHY USB 3.0 SS only PHY Synopsys
USB/PCIe Combo USB3.0 & PCIe2.1 Combo PHY Innosilicon
USB 3.1/DP Tx Combo USB 3.1 (10G), DP Synopsys
LPDDR3/4 LPDDR Combo PHY Invecas
DDR / LPDDR Combo LPDDR/DDR-3/4 Combo PHY Uniquify / Synopsys
eMMC/SDIO/UHS
Combo PHYeMMC 5.1 + SDIO 3.0 + UHS 1 Invecas
Analog, Special IO and eFPGA Interface IP
22FDX®: RF & Soft IPs
IP Type IP Description IP Provider
Bluetooth
Bluetooth 5.0 RF+ BB Imagination, Verisilicon
Bluetooth 5.0 & Zigbee Combo RF+BBImagination
BLE/802.15.4 RF Only ORCA
Low Power WiFiWiFi 802.11n RF+BB
Imagination, Verisilicon
IoT
NB-IOT RF+BB Verisilicon, AsK Radio
NB-IOT/Cat-M1 Combo RF+BBVerisilicon
Modem, Base Band,
SW Stack
BLE, Dual-Mode BT, NB-IOT, CAT-M1Ceva
RF Interface IP
IP Type IP Description IP Provider
Risc-V
E51 (32bit), E51 (64bit) SiFive
N/E25 (32bit), N/EX25 (64bit) Andes
Bk-1/3 (32bit), BK-5 (64bit) Codasip
64bit IMAFDC (RVGC) REM
Other RISC
16/32-bit eSi-RISC Microprocessor IP EnSilica
16/32-bit AndesCore RISC Families Andes
Image & Computer
Vision DSP
Smart imaging and computer vision
DSP coresCeva, Cadence,
Imagination
Audio/Voice DSP Voice activation, sound-sensing DSP Ceva, Cadence
AI, Deep LearningCNN/DNN for real-time embedded
applicationCeva, Cadence,
Imagination
Network-on-Chip SoC Interconnect on chip fabric IPArteris, Sonics,
Netspeed
RISC, DSP and Others
The industry’s most advanced FD-SOI roadmap
19
Committed to enhancing differentiation and maintaining our FDXTM leadership
mmWave
• Fully featured PDK & model accuracy
• Reference designs and PA reliability
• Prototyping today
• Qualified by Q1’19
Auto
• G1 qual for Auto MCU
• AEC Q-100 qualified
• IATF16949 certified
• G2 qualified today
• G1 by Q2’19
eMRAM
• Future eMRAM compilers
• G1 qual for eMRAM
• Prototyping today
• Qualified by Mid ’19
Ecosystem
• >50 FDXceleratorTM
partners by 4Q18
• Adding Europe/Auto ecosystem
• 10 EU/Auto partners by EoY ‘19
12FDX™
• Full node PPA w/ superior RF/mmW
• Migration from 22FDX
• Ready to partner
12FDX™: Ready to partner on next generation FDX™ designs
20
The world’s most advanced planar technology; optimized for energy efficiency and RF/mmWave
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5
Fre
qu
en
cy
Total Power
22fdx
12fdx
+27%-52%
✓ Demonstrated near-7nm power
efficiency for edge-AI/ML
✓ Superior mmWave → FinFET limited
due to low BVDS, high parasitics, and
electromigration
✓ Leverages 14nm and 22FDX → 95%
tool re-use with 14nm
✓ Evaluation PDK (v0.2) available today
✓ Early silicon proof-points
✓ AC performance up to 90% target
The information contained herein is the property of GLOBALFOUNDRIES and/or its licensors.
This document is for informational purposes only, is current only as of the date of publication and is subject to change by GLOBALFOUNDRIES at any time without notice.
GLOBALFOUNDRIES, the GLOBALFOUNDRIES logo and combinations thereof are trademarks of GLOBALFOUNDRIES Inc. in the United States and/or other jurisdictions. Other product or service names are for identification purposes only and may be trademarks or service marks of their respective owners.
© GLOBALFOUNDRIES Inc. 2018. Unless otherwise indicated, all rights reserved. Do not copy or redistribute except as expressly permitted by GLOBALFOUNDRIES.
Thank You