Solid state lightingSolid state lighting

Maxim Odnoblyudov

Optogan Ltd

Energy efficient and environmental friendly nanotechnology solution

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Lighting Lighting HistoryHistory

Illumination Market: $12 Bil

+luminophore

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Manufacturing processManufacturing process

Wafer Epitaxy

Wafer Processing

Back-end & Chip Sorting

Chip packaging

LuminariesSystems

LED fabricationDie fabrication – Main know-how

Module assembly

(+Drivers and

controls)

History History

Founders: Vladislav Bougrov Maxim OdnoblyudovAlexei Kovsh

– 1996: Graduated from St. Petersburg Electrical Engineering University (LETI) Optoelectronics Department at A.F. Ioffe Physico-Technical

Institute

– 1998: PhD in Physics from A.F. Ioffe Physico-Technical Institute

2004: OptoGaN Oy was founded as Finnish limited Company– Established contact with Helsinki University of Technology.

– Joint application to Finnish Technology Agency (TEKES) to finance industrial oriented research.

– First VC financing round

2005: OptoGaN GmbH: Pilot line in Dortmund– Public infrastructure used

– Product- and process development and industrialization

– Low-volume precompetitive production for early market penetration

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OptoGaN facilitiesOptoGaN facilities

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LAB : Helsinki Pilot line : Dortmund

Private equity investment

Public grants in Finland and Germany

Dortmund and NRW investment in equipment

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Pilotline DortmundPilotline Dortmund

2 shift developmentoperation established

MarketMarket

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MarketMarket

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Market NichesMarket Niches

Drivers for next years

LCD backlights Automotive Illumination

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Energy SavingEnergy Saving

Energy consumption Energy consumption issueissue

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Clean TechnologyClean Technology

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Clean TechnologyClean Technology

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Market by applicationsMarket by applications

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LED Lamp AdvantagesLED Lamp Advantages

Clean technology

Health care – light „quality“

Energy saving

Lifetime – cost of ownership

Size

Cost

Race is on

Illumination Market:

$12 Bil.

40$/klm 1-5$/klm

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LED FormulaLED Formula

To reduce cost per lumen in LED lamps one should maintain or reduce manufacturing costs and increase brightness

Bulb: 700 lm 12 lm/W 60W

LED: 100 lm 100 lm/W 1 W

Problem: Increase of input power vanishes main LED advantages: efficiency and life time drops

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GaN LED ProblemGaN LED Problem

Inherent drawbacks of GaN technology:

Main drawback of GaN technology as compared to conventional III-V materials is absence of cost-effective bulk GaN substrates

This results in:– High density of defects in GaN epitaxial layers grown on foreign substrates

– Low efficiency of light extraction from chips due to strong internal reflection of light on GaN – foreign substrate interface

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Company USPCompany USP

Company USP is possibility to linear increase input power density via high power LED chips without significant loss of efficiency.Company IP consists of:– Epitaxy technology for a unique GaN/Sapphire material quality

– Wafer layer structure optimized for high efficiency at high input power operation

– Chip design enabling uniform current density over chip surface at high input power operation

OptoGaN AchievementsOptoGaN Achievements

Full line chip fabrication production facility

Production type proven technology is at hand

Strong IP portfolio

Team of experienced engineers

LOI with several customers for the chips is signed

Industry leading cost per lumen characteristic:

15$/klm with potential to reach 5$/klm in 2010

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Technology enables:

increasing input power of high brightness LEDs without loosing efficiencyto achieve bulb-like brightnessutilizing standard GaN/sapphire manufacturing techniquesto achieve bulb-like street pricecurrent technology level gives 15 $/klm

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Towards to mass production through joint venture

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Thank you!Thank you!