1 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

Power Converter Systems

Graduate Course EE8407

Ryerson Campus

Bin Wu PhD, PEng

ProfessorELCE DepartmentRyerson University

Contact Info Office: ENG328Tel: (416) 979-5000 ext: 6484Email: bwu@ee.ryerson.ca http://www.ee.ryerson.ca/~bwu/

2 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

Topic 2

High-Power Semiconductor Devices

3 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Power Diode• SCR Thyristor• Gate Turn-Off Thyristor (GTO)• Integrated Gate Commutated Thyristor (GCT)• Insulated Gate Bipolar Transistor (IGBT)• Switch Series Operation

Lecture Topics

High-Power Semiconductor Devices

4 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

12000

10000

8000

SCR12000V/1500A

(Mitsubishi)

4500V/900A(Mitsubishi)

6500V/1500A(Mitsubishi)

GTO/GCT

7500V/1650A(Eupec)

6500V/600A(Eupec)

6000

4000

2000

1000 2000 3000 4000

3300V/1200A(Eupec)

2500V/1800A(Fuji)

1700V/3600A(Eupec)

IGBT

SCR:GTO/GCT:IGBT:

27MVA36MVA

6MVA

6000V/3000A(ABB)

6500V/4200A(ABB)

6000V/6000A(Mitsubishi)

4800V5000A

(Westcode)

5000 6000 I (A)

V (V)

00

• Device Rating

High-Power Semiconductor Devices

5 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

4500V/800A press pack and 1700V/1200A module diodes

Power Diode

6 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

Press pack device:• Double sided cooling• Low assembly cost and high power density• Preferred choice for high voltage high power applications

• Heatsink Assembly

A

B

CdV

P

N

(a) Diode Rectifier (b) Press pack (c) Module

Heatsink

A

P

N

P

N

A

Power Diode

7 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

4500V/800A and 4500V/1500A SCRs

SCR Thyristor

8 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Switching Characteristics

DI9.0

DI1.0rrt

rrI1.0rrI

onV

dont

ontrt

Gi

Ti

Tv

GMIGMI1.0

t

t

t

DI

offt

rrQ

DVDV1.0

Ti

TvGi

SCR Thyristor

9 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

DRMV RRMV TAVMI TRMSI - Maximum Rating 12000V 12000V 1500A 2360A -

Turn-on

Time

Turn-off

Time /dtdiT /dtdvT rrQ Switching

Characteristics sont 14 sofft 1200 sA /100 sV /2000 C7000

DRMV – Repetitive peak off-state voltage RRMV – Repetitive peak reverse voltage

TAVMI – Maximum average on-state current RRMSI – Maximum rms on-state current

2rrrr

rr

ItQ – Reverse recovery Charge Part number – FT1500AU-240 (Mitsubishi)

• Main Specifications

12000V/1500A SCR Thyristor

SCR Thyristor

10 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

4500V/800A and 4500V/1500A GTOs

Gate Turn-Off (GTO) Thyristor

11 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Symmetrical versus Asymmetrical GTOs

Type Blocking Voltage

Example (6000V GTOs)

Applications

Asymmetrical GTO DRMRRM VV VVDRM 6000

VVRRM 22

For use in voltage

source inverters with anti-parallel diodes.

Symmetrical GTO DRMRRMVV VVDRM 6000

VVRRM 6500

For use in current source inverters.

DRMV - Maximum repetitive peak (forward) off-state voltage

RRMV - Maximum repetitive peak reverse voltage

Gate Turn-Off (GTO) Thyristor

12 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Switching Characteristics

Tv

DV

dofft tailt

ft

DV9.0

DV1.0DI

DI9.0

DI1.0

rtdont

dtdiG /1

MGI 1

MGI 11.0 MGI 21.0

MGI 2

TiTT iv ,

Gi

t

t

dtdiG /2

0

0

Ti

TvGi

Gate Turn-Off (GTO) Thyristor

13 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Main Specifications

DRMV RRMV TGQMI TAVMI TRMSI - Maximum Rating 4500V 17V 4000A 1000A 1570A -

Turn-on Switching

Turn-off Switching

/dtdiT /dtdvT /dtdiG1 /dtdiG2 Switching

Characteristics sdont 5.2

srt 0.5

sdofft 0.25

sft 0.3 sA /500 sV /1000 sA /40 sA /40

On-state Voltage VV stateonT 4.4)( at AIT 4000

DRMV - Repetitive peak off-state voltage RRMV - Repetitive peak reverse voltage

TGQMI - Repetitive controllable on-state current TAVMI - Maximum average on-state current

RRMSI - Maximum rms on-state current Part number - 5SGA 40L4501 (ABB)

4500V/4000A Asymmetrical GTO Thyristor

Gate Turn-Off (GTO) Thyristor

14 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

6500V/1500A Symmetrical GCT

GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional)

Integrated Gate Commutated Thyristor (GCT)

15 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• GCT Classifications

Type Anti-parallel

Diode Blocking Voltage

Example (6000V GCT)

Applications

Asymmetrical GCT Excluded

DRMRRM VV

VVDRM 6000VVRRM 22

For use in voltage source inverters with anti-parallel diodes.

Reverse Conducting GCT

Included 0RRMV VVDRM 6000 For use in voltage source inverters.

Symmetrical GCT (Reverse Blocking)

Not required DRMRRM VV VVDRM 6000VVRRM 6500

For use in current source Inverters.

DRMV - Maximum repetitive peak forward off-state voltage

RRMV - Maximum repetitive peak reverse voltage

Integrated Gate Commutated Thyristor

16 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Switching Characteristics

DI9.0

DI4.0

DV9.0

DV1.0

Gi

Gv

t

t

TT iv ,

Tv

DV

Ti

DI

rtdont

dtdiG /1

dtdiG /2

dofft

ft

Gv

0

0

Gi

Ti

TvGi

Integrated Gate Commutated Thyristor

17 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Main Specifications

DRMV RRMV TQRMI TAVMI TRMSI - Maximum Rating 6000V 22V 6000A 2000A 3100A -

Turn-on Switching

Turn-off Switching

/dtdiT /dtdvT /dtdiG1 /dtdiG2 Switching

Characteristics stdon 0.1

srt 0.2

sdofft 0.3

ft - N/A sA /1000 sV /3000 sA /200

10,000

sA /

On-state

Voltage VV stateonT 4)( at AIT 6000

DRMV - Repetitive peak off-state voltage RRMV - Repetitive peak reverse voltage

TGRMI - Repetitive controllable on-state current TAVMI - Maximum average on-state current

RRMSI - Maximum rms on-state current Part number – FGC6000AX120DS (Mitsubishi)

6000V/6000A Asymmetrical GCT

Integrated Gate Commutated Thyristor

18 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

1700V/1200A and 3300V/1200A IGBT modules

Insulated Gate Bipolar Transistor (IGBT)

19 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

Static V-I Characteristics

t+15V

90%

t

+15V

10%

tdon tr tdoff tf

t

90%

0

GEv

Gv

Ci

0

0

Switching characteristics

5GEV

4GEV

3GEV

2GEV

1GEV

CEV2V0

CI

CEvG

C

E

Ci

• IGBT Characteristics

Insulated Gate Bipolar Transistor (IGBT)

20 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Main Specifications

CEV CI CMI - Maximum Rating 3300V 1200A 2400A -

dont rt dofft ft Switching Characteristics 0.35 s 0.27 s 1.7 s 0.2 s

Saturation Voltage

V3.4satCEI at AIC 1200

CEV - Rated collector-emitter voltage

CI - Rated dc collector current

CMI - Maximum repetitive peak collector current

Part number – FZ1200 R33 KF2 (Eupec)

3300V/1200A IGBT

Insulated Gate Bipolar Transistor (IGBT)

21 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Cause of Voltage Imbalance

1S

2S

3S

1v

2v

3v

Type Causes of Voltage Imbalance

Static Voltage Sharing

lkI – Device off-state leakage current

jT – Junction temperature

Device

dont – Turn-on delay time

dofft – Turn-off delay time

rrQ – Reverse recovery charge of

anti-parallel diode

jT – Junction temperature

Gate Driver

GDont – Gate driver turn-on delay time

GDofft – Gate driver turn-off delay time

wireL – Wiring inductance between the

the gate driver and the device gate

Dynamic Voltage Sharing

– Differences between series connected devices.

Device Series Operation

22 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

sR

sCvR

sR

sCvR

sR

sCvR

1S

2S

3S

1v

2v

3v

• Equal Voltage Sharing

• S1, S2, S3:

GTO, GCT or IGBT

• Voltage Sharing:

v1 = v2 = v3 in steady state

and transients

• Static Voltage Sharing:

Rv

• Dynamic Voltage Sharing:

Rs and Cs

Device Series Operation

23 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

• Active Overvoltage Clamping (AOC)

• Assumption: S1 is turned off earlier than S2

• VCE1 is clamed to Vm due to active clamping.

Gate SignalConditioning

inv

Gate SignalConditioning gR

Amp

gRAmp

Active OvervoltageClamping

AOC

Vm

Vm

1CEv

2CEv

1S

2S

- Suitable for series IGBTs- Not applicable to GCTs

1CEv

2CEvCi

dt0

mV

t

Device Series Operation

24 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2

Item GTO IGCT IGBT M axim um switch pow er (Device IV )

36M VA 36M VA 6M VA

Active di/dt and dv/dt control No No Y es

Active short circuit protection No No Y es

Turn-off (dv/dt) snubber Required Not required No required

Turn-on (di/dt) snubber Required Required No required

Parallel connection No No Y es

Sw itching speed Slow M oderate Fast

Behavior after destruction Shorted Shorted O pen

in m ost cases

O n-state losses Low Low H igh

Sw itching losses H igh Low Low

Gate Driver Com plex, separate

Com plex, integrated

Sim ple, com pact

Gate Driver Pow er Consum ption

H igh H igh Low

Summary

25 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006

EE8407 Topic 2