simulation of charge t ransport in oxides and organic semiconducting materials

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Simulation of Charge Transport in Oxides Simulation of Charge Transport in Oxides and Organic Semiconducting Materials and Organic Semiconducting Materials Jochen Blumberger University College London Trieste, 23.05.2014 kshop on Materials Challenges in Devices for Fuel Solar Production and Employ

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Jochen Blumberger University College London Trieste, 23.05.2014. Simulation of Charge T ransport in Oxides and Organic Semiconducting Materials. Workshop on Materials Challenges in Devices for Fuel Solar Production and Employment. II. CT in oxide materials. Overview. - PowerPoint PPT Presentation

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Page 1: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Simulation of Charge Transport in Oxides and Organic Simulation of Charge Transport in Oxides and Organic Semiconducting MaterialsSemiconducting Materials

Jochen Blumberger

University College London

Trieste, 23.05.2014

Workshop on Materials Challenges in Devices for Fuel Solar Production and Employment

Page 2: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

OverviewI. Theoretical background II. CT in oxide materials

III. CT in organic solar cell materials

IV. CT in bacterial nanowiresElectrode

e-

Food

Food

Microbe

Page 3: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Photoelectrochemical cell

e-

oxide good charge transport

essential for high efficiency

Page 4: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

e-

Clarke and Durrant, Chem Rev. (2010)

Organic photovoltaic cell

good charge transport essential for high efficiency

Page 5: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Ishii, S. et al. Appl. Environ. Microbiol. 71, 7838 (2006).

Electrode

Food

e-Microbe

Mediatorless microbial fuel cell

Summers, Z. M. et al. Science 330, 1413 (2010).

good charge transport essential for high efficiency

Page 6: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Why computation ?

Nature of charge carrier (localised/delocalised)

Mechanism of charge transport (band/hopping/wavepacket)

Atomistic interpretation of measured charge mobilities, I-V curves

NanoStructure-property relationships

Page 7: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Overview

• I. Theoretical Background

• II. Electron tunneling between O-vacancies in MgO

• III. Electron transport in fullerenes

• IV. Electron transport in bacterial nanowires

Page 8: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Which theory is adequate?

Cha

rge

mob

ilit

y

electron-phonon couplingor reorganisation energy or trapping energy

Page 9: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Which theory is adequate?

Cha

rge

mob

ilit

y

electron-phonon couplingor reorganisation energy or trapping energy

metals

band theory

redox in solutionredox proteins

Small polaron hoppingET theories (Marcus)

Page 10: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Which theory is adequate?

Cha

rge

mob

ilit

y

electron-phonon couplingor reorganisation energy or trapping energy

metals

band theory

redox in solution redox proteins

Small polaron hoppingET theories (Marcus)

?

holes/e- in oxidesholes/e- in organicsemiconductors

Page 11: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electron transfer theory (Thermally activated polaron hopping)

initial diabatic state final diabatic state

e-e-

Page 12: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Diabatic and adiabatic electronic states

Q reaction coordinate

λ reorganization energy

Hab electronic coupling matrix element

initial diabatic state

final diabatic statee-e-

adiabatic ground & 1st excited ET state

Page 13: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Diabatic and adiabatic electronic states

e-e-

Transition state theory

Nuclear tunneling

Landau-Zener theory

Page 14: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Diabatic states from constrained DFT (CDFT)

Idea: - Construct Hamiltonian in diabatic = charge localized basis

-Create charge localized states by adding an external

potential to Hamiltonian

=

Martin Karplus (1963) (?), Arieh Warshel (1993), Troy Van Voorhis (2005), John Tully

(2008),…

Page 15: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Charge constrained DFT (CDFT)

1. Define donor, acceptor and external potential w(r)

Q. Wu and T. van Voorhis, Phys. Rev. A 72, 024502 (2005)

Page 16: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Charge constrained DFT (CDFT)

1. Define donor, acceptor and external potential w(r)

2. Add Vw(r) to KS-equation

and vary V so that charge constraint

is fulfilled.

Q. Wu and T. van Voorhis, Phys. Rev. A 72, 024502 (2005)

Page 17: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Charge constrained DFT (CDFT)

1. Define donor, acceptor and external potential w(r)

2. Add Vw(r) to KS-equation

and vary V so that charge constraint

is fulfilled.

Q. Wu and T. van Voorhis, Phys. Rev. A 72, 024502 (2005)

diabatic state B ψB, EB = FB-VBN

1 AD qq

e-

e-

1 AD qq

diabatic state AψA, EA = FA-VAN

Page 18: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Charge constrained DFT (CDFT)

1. Define donor, acceptor and external potential w(r)

Q Wu and T Van Voorhis, Phys. Rev. A 72, 024502 (2005)

diabatic state B ψB, EB = FB-VBN

1 AD qq

e-

e-

1 AD qq

diabatic state AψA, EA = FA-VAN

Page 19: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

CDFT Implementation in the CPMD code

• CDFT weight function for charge constraint:

where ρi are promolecular atomic densities (pseudo AO, Slater, Gaussians)

• CDFT wavefunction optimisation, geometry optimisation and BOMD

• GGA, hybrid and range separated hybrid functionals (with new HFX parallelisation)

• Troullier-Martins or Goedecker-Hutter pseudo potentials for core electrons

• Available in CPMD Version 3.15.1 (thanks to M. Boero and T. Laino)

H. Oberhofer, JB, J. Chem. Phys. 131, 064101 (2009)H. Oberhofer, JB, J. Chem. Phys. 133, 244105 (2010)

Page 20: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Benchmarking CDFT electronic couplings (Hab):The HAB11 database

A. Kubas, F. Hoffmann, A. Heck, H. Oberhofer, M. Elstner JB, J. Chem. Phys. 140, 104105 (2014).

Page 21: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Hab CDFT error wrt MRCI+Q/NEVPT2

Relatively small dependence on %HFX25-50% HFX gives excellent accuracy

A. Kubas, F. Hoffmann, A. Heck, H. Oberhofer, M. Elstner JB, J. Chem. Phys. 140, 104105 (2014).

Page 22: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Overview

• I. Theoretical Background

• II. Electron tunneling between O-vacancies in MgO

• III. Electron transport in fullerenes

• IV. Electron transport in bacterial nanowires

Page 23: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electron tunneling between F+-F0 centres in MgO

positively charged oxygen vacancy

neutral oxygenvacancy

F0F+

Page 24: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Initial diabatic state from CDFT

Isosurface of spin density, PBE0 (CPMD code):

K. P. McKenna, JB Phys. Rev B. 86, 245110 (2012).

Page 25: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Initial diabatic state from CDFT

Isosurface of spin density, PBE0 (CPMD code):

K. P. McKenna, JB Phys. Rev B. 86, 245110 (2012).

Page 26: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Final diabatic state from CDFT

Isosurface of spin density, PBE0 (CPMD code):

K. P. McKenna, JB Phys. Rev B. 86, 245110 (2012).

Page 27: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electronic coupling

• CDFT calculation with PBE0 for

• F-centres along 100, 110, 111, 211 and 310 crystallographic directions

• distance between F-centres ranging from 3 to 16 Angstroms

K. P. McKenna, JB Phys. Rev B. 86, 245110 (2012).

Page 28: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Hab CDFT for hole transfer in MgO

5 10 15defect separation (Angstroms)

PBE with different %ages of Hartree-Fock exchange (HFX):

JB, K. P. McKenna, Phys. Chem. Chem. Phys. 15, 2184 (2013).

Strong dependence on % HFX

Page 29: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Coupling decay constant versus band gap Eg

Eg: band gap of MgO

0%

25%

50%75%

100%

PBE + x % HFX

JB, K. P. McKenna, Phys. Chem. Chem. Phys. 15, 2184 (2013).

Page 30: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Square barrier tunneling model

Exact solution of Schroedinger equation:

Use functional that gets band gap right (PBE0 i.e. 25%HFX)

Page 31: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Parallelisation of HFX in CPMD

PBE

PBE0 PBE0hfx parallelized

V. Weber, T. Laino, A. Curioni (IBM Zurich)http://cpmd.org/the-code/performance-and-scale-out

Mg80O78+

Page 32: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Accounting for finite size effects on electronic couplingJB, K. P. McKenna, Phys. Chem. Chem. Phys. 15, 2184 (2013).

Page 33: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Accounting for finite size effects on electronic couplingJB, K. P. McKenna, Phys. Chem. Chem. Phys. 15, 2184 (2013).

Page 34: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electronic coupling versus defect separation

Overall approximately exponential and isotropic decay

CDFT, PBE0, for MgO 100, 110, 111, 211 and 310 crystallographic directions

K. P. McKenna, JB Phys. Rev B. 86, 245110 (2012).

Page 35: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Reorganization energy versus defect separation

CDFT, PBE0, for MgO 100, 110, 111, 211 and 310 crystallographic directions

long range: Marcus like = const – 1/d short range: non-Marcus due to large distortions of e--Mg2+ distances

K. P. McKenna, JB Phys. Rev B. 86, 245110 (2012).

Page 36: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Hole transfer rates between F-center defects in MgO K. P. McKenna, JB Phys. Rev B. 86,45110 (2012).

5

6

7

8

9

10

11

12

13

442 6 8 10 12 14 16 18 20

log

(kE

T/s

-1)

distance between F centers (Angstroms) 0

hello hellohello

Page 37: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Three ET regimes

Hab << λ Hab > 3/8 λ Hab < 3/8 λ

“non-adiabatic ET” “adiabatic ET” delocalized carrier

no ET rate defined

Page 38: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

5

6

7

8

9

10

11

12

13

442 6 8 10 12 14 16 18 20

log

(kE

T/s

-1)

distance between F centers (Angstroms) 0

crossover incoherent coherenttransport

Rates & Transport regimesK. P. McKenna, JB Phys. Rev B. 86, 245110 (2012).

no polaron no rate

hole hopping

hole hopping

Page 39: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Overview

• I. Theoretical Background

• II. Electron tunneling between O-vacancies in MgO

• III. Electron transport in fullerenes

• IV. Electron transport in bacterial nanowires

Page 40: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electron transport in fullerenes

e-

exciton dissociation efficiency

electron mobility nanoscale/mesoscale structure

Clarke and Durrant, Chem Rev. (2010)

Page 41: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Dabirian et al. PCCP 12, 4473 (2010).

Kim et al. ACS Nano 3, 2557 (2009).

distorted bcc (model)

hexagonal (no X-ray)

monoclinic w. solvent

Rispens et al. Chem Commun 2116, (2003).

triclinic w. solvent

Phenyl-C61-Butyric acid Methyl ester (PCBM)

Page 42: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

First solvent-free PCBM single crystalG. Paterno, J. Spencer, JB, F. Cacialli and co-workers, J. Mater. Chem. C (2013)

monoclinic4 PCBM/unit cell

obtained by slow drying from chlorobenzene See also Casalegno et al.

Chem. Commun. 49, 4525 (2013)

Page 43: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

First solvent-free PCBM single crystalG. Paterno, J. Spencer, JB, F. Cacialli and co-workers, J. Mater. Chem. C (2013)

Page 44: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

First solvent-free PCBM single crystalG. Paterno, J. Spencer, JB, F. Cacialli and co-workers, J. Mater. Chem. C (2013)

MD exp

density (g/cm3) 1.653 1.631

RDF 1. peak (A) 10.05 10.2

coordination number 7 7

very good agreement with experimental X-ray structure

Page 45: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electronic couplings vs distance in PCBM crystalsF. Gajdos, H. Oberhofer, M. Dupuis, JB J. Phys. Chem. Lett. 4, 1012 (2013).

I

(Gajdos)

Page 46: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electronic couplings vs distance in PCBM crystalsF. Gajdos, H. Oberhofer, M. Dupuis, JB J. Phys. Chem. Lett. 4, 1012 (2013).

constructive orbital overlap

destructiveorbital overlap

Page 47: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Polaron hopping

calculate Hab , for all possible hops

hopping rate kET for all possible hops

time

field

e-

is currently the state-of-the-art, used by many groups: Bredas, Nelson, Andrienko,…

Page 48: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Polaron hopping

calculate Hab , for all possible hops

hopping rate kET for all possible hops

experiment

time

field

e-

mobility factor of 6 too large not bad….

is currently the state-of-the-art, used by many groups: Bredas, Nelson, Andrienko,…

Kinetic Monte Carlo

Page 49: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Polaron hopping

calculate Hab , for all possible hops

hopping rate kET for all possible hops

experiment

time

field

e-

mobility factor of 6 too large not bad….

is currently the state-of-the-art, used by many groups: Bredas, Nelson, Andrienko,…

Kinetic Monte Carlo

Page 50: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Polaron does not exist

|HAB| = up to 150 meV

λ = 150 meV

|HAB| > 3/8 λ

no barrier, ET rate not defined

(though one can still insert into the rate equation and get some number)

Page 51: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Non-adiabatic MD for ET in organic materials

field

time

Don’t integrate electron dynamics out (as done in rate theory)

Solve coupled electron-nuclear dynamics

Page 52: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Non-adiabatic MD for ET in organic materials

field

time

Don’t integrate electron dynamics out (as done in rate theory)

Solve coupled electron-nuclear dynamics

Fast Tully surface hopping molecular dynamics:

Wavefunction expansion:

work in progress

Page 53: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

“Message passing” parametrisation of non-adiabatic MD

off-diagonal Hamiltonian

elements:

can be calculated

ultrafast

Page 54: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Speed-up of 6 orders of magnitude, little loss of accuracy

Page 55: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Overview

• I. Theoretical Background

• II. Electron tunneling between O-vacancies in MgO

• III. Electron transport in fullerenes

• IV. Electron transport in bacterial nanowires

Page 56: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Very long-ranged electron transport (ET) in biology

pili

e-extracellular ET via conductive pili

Summers et al. Science 330, 1413 (2010).

1 m

Page 57: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

extracellular ET via conductive pili

Very long-ranged electron transport (ET) in biology

I-V measurementson pili

nA over 0.6 m

1 Siemens/cm

El-Naggar et al., PNAS 107, 18127 (2010).

AFM tip

e-

Summers et al. Science 330, 1413 (2010).

Au

Page 58: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

m

What is mediating the ET?

10-100 nm

5-10 nm

1 nm

Protein thermal fluctuations

Electronic coupling

Protein-protein interactions

Cellular/environmental interactions

Page 59: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

MtrF: a deca-heme “nanowire” protein

• binds 10 hemes

• all hemes bis-his (low spin)

• staggered octaheme bisected by planar tetra-heme chain

4.5 nm

6.5 nm

Why a tri-furcated electron transfer path?

Page 60: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Band structure of deca-heme protein

CB water

CB protein

VB water

VB protein

‘VB heme’

‘CB heme’

~ 0.3 eV

Page 61: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Computation of heme reduction potentials

redox

oxred

AMBER03/TIP3P

exp: from proteinfilm voltammetry

assignment of heme reduction potentials

M Breuer, PP Zarzycki, JB, KM Rosso, J. Am. Chem. Soc. 134, 9868 (2012).

Page 62: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Free energy landscape for electron transport

1

6

4

3

2

5

7

8

9

10

largest barrier for forward flow: 0.35 eV

largest barrier for reverse flow: 0.34 eV

M Breuer, PP Zarzycki, JB, KM Rosso, J. Am. Chem. Soc. 134, 9868 (2012).

How can protein cope with these barriers?

Page 63: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electronic coupling versus heme-heme distance

2.1±1.4 0.4±0.3 0.2±0.2

stacked T-shaped coplanar

in meV

FODFT(PBE), 100 ns MD for each heme-pair

M Breuer, KM Rosso, JB PNAS 111, 611 (2014)

1

stacked

T-shaped

coplanar

Page 64: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Free energy (solid) vs electronic coupling Hab (circles)

(Breuer)

stacked

T-shapedco-planar

ET is a balancing act between electronic coupling and free energy

Strongest electronic couplings where free energy barriers are largest

Stacked hemes facilitate transport into protein interior

M Breuer, KM Rosso, JB PNAS 111, 611 (2014)

Page 65: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Heme-to-heme ET rates in MtrF

(Breuer)

rates in the range (100 s)-1 to (100 ps) -1 range

rates ~ the same in and directions

full : e- shaded: e-

M Breuer, KM Rosso, JB PNAS 111, 611 (2014)

Page 66: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

MV+e-

Solution kineticsGF White et al., PNAS 110, 6346 (2013).

How can we make contact to experiment?

Page 67: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

MV+e-

Solution kinetics I-V measurements

a

GF White et al., PNAS 110, 6346 (2013). MY El-Naggar et al., PNAS 107, 18127 (2010).

How can we make contact to experiment?

Page 68: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electron flux via Master Equation

5

4

7

6

8

3

2

1

• Electron hopping: i = D, heme 1-8, A

(i)red + (i+1)ox (i)ox + (i+1)red

• Electron flux between two neighbour hemes:

P(i) = electron population on heme i (≤1)

• Steady state flux:

solve iterativelyD

A

k1D kD1

kA8 k8A

k9,10

k10,9J

M Breuer, KM Rosso, JB PNAS 111, 611 (2014)

Page 69: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electron flux J through MtrF

simulation

experimental lower limit

protein limited

5

4

7

6

8

3

2

1

MV+

Fe2O3

kin

kout

k9,10

k10,9J

kin >>kout

Page 70: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Electron flux J through MtrF

simulation

experimental lower limit

protein limited

5

4

7

6

8

3

2

1

MV+

Fe2O3

kin

kout

k9,10

k10,9J

kin >>kout

experiment: 8x103 electrons/sec (lower limit) simulation: 104-105 electrons/sec “a first indication” that computed rates are OK

simulation

experimental lower limit

acceptor limited protein limited

Page 71: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

5

4

7

6

8

3

2

1

I-V characteristic of MtrF

kin, EETe-

e- kout, EET

J = -I

V

anode

cathode

Page 72: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

5

4

7

6

8

3

2

1

J

I-V characteristic of MtrF

kin, EETe-

e-

simulation: ~ pAexperiment: ~ nA !

kout, EET

J = -I

V

anode

cathode

Page 73: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Conclusions: Three ET regimes

Hab << λ Hab > 3/8 λ Hab < 3/8 λ

“non-adiabatic ET” “adiabatic ET” delocalized carrier

Page 74: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Acknowledgment

CDFT & FODFT implementationDr Harald Oberhofer (U Cambridge, TU Munich)

MgODr Keith McKenna (York)Prof Alex Shluger (UCL)

fullerenesFruzsina Gajdos (UCL)Jacob Spencer (UCL)

Dr. Michel Dupuis (PNNL)Prof Franco Cacialli (UCL)

£££:

Biological nanowireMarian Breuer (UCL)

Dr Kevin Rosso (PNNL)Prof Julea Butt (UEA)

Page 75: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials
Page 76: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials
Page 77: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

Sensitivity on definition of charge constraint

Charge constraint 1: 6 Mg coord. O vacancies

Charge constraint 2: all atoms in left/right half

JB, K. P. McKenna, Phys. Chem. Chem. Phys. 15, 2184 (2013).

Page 78: Simulation of Charge  T ransport in Oxides and Organic Semiconducting Materials

CPMD INPUT file: donor (D) atoms, acceptor (A) atoms

weight function w (r) = wA,D (pseudo AO, Slater, Gaussian)

charge difference (NC = +1 or -1 for transfer of 1 electron)

initial guess for Lagrange multiplier V=V0

wavefunction optimization

is charge constraint fulfilled ? i.e.

Yes, ψA, EA = FA-VANC

new Lagrange multiplier

No

(Oberhofer)