SIMS: Secondary Ion Mass Spectroscopy

Principle

Secondary Chamber(sample loading)

Primary Chamber(target)

Ion sourceO2+, Cs+

Ion gunDeltaV=5KV

Magnetic Arm

Wire Chamber

V=6KV

V=5KV

The beam is scanning (and escavating) the sample

200-250 um

0.5-2 um

Measured with AFM

Restricted region analyzed(to avoid scattering from walls)

Readout is switched between Si, Al, B/P forevery point.

t

Counts (log scale)

Si (bulk), constant

B or P,As, decreasing as a function of time (depth)

t

Si (bulk), constant

B or P,As (implant), constantNIST control sample(B or P implant with constant density in silicon bulk)

time converted to depth by using the AFM measurement

Still waiting for n-in-n results...

n-in-p: pixel implant

n+ window (pixel): 3 points for each of the two samples

moderated p-spray

non-moderated p-spray

back contact

Still waiting for final n-in-n numbers

Reasonable values for pixel and high-low pspray

Something strange in the back metal(at least for the measurements done while I was here)

Contamination from the wet etching?

Next PPS meetings1) Mini PPS meeting (phone): 13 Dec 4pm - short, 1-2 hours just summary of activities

2) PPS General meeting (CERN): Feb 15th (?) - 1 day with possible overspill to 16th

3) PPS General meeting: Liverpool End May/ Beg June (?) (attached to the RD50 workshop)

For 1) we might want to provide some materialFor 2) and 3) we should prepare talks