silicon carbide technology overview - richardson rfpd · 2019-05-15 · silicon carbide technology...

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Silicon Carbide Technology Overview

www.richardsonrfpd.comMARCH 2017


Your Source for Silicon Carbide Power ProductsDeep Technical ExpertiseSilicon carbide (SiC) offers significant advantages in high-power, high-voltage applications where power density, higher performance and reliability are of the utmost importance. Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of industrial applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material.

SiC MOSFETs produce much lower switching losses compared to Si IGBTs, as shown in the yellow-highlighted areas below:

Si IGBT SiC MOS

Voltage

Turn

Off

Turn

On Eon = 10.0 mJ

Eoff = 11.2 mJ

Eon = 3.3 mJ

Eoff = 3.2 mJ

SiC Schottky diodes have near-zero reverse recovery losses compared to Si FREDs and are stable over temperature:

Current

Voltage

Current

Current

Current

Voltage

Voltage

SiC MOSFETs have a much more stable RDS(on) over temperature than Si MOSFETs.

SiC MOSFETs include a robust body diode with much lower reverse recovery charge (Qrr) and reverse recovery time (Trr) than Si MOSFETs.

Advantages of designing in SiC include: > SiC diodes have near-zero reverse recovery current > Improved efficiencies and decreased thermal dissipation > Smaller power electronics and system size > Higher power density > Higher operating frequency > Simple parallel operation > Reduced overall system cost


$450.00

$400.00

$350.00

$300.00

$250.00

$200.00

$150.00

$100.00

$50.00

$0China Brazil UK Japan Spain Germany DenmarkUSA

2919 14 11 9 8 7 6

Savings/YR Pay Back Period (Months)• $200 cost differential between Si and SiC Module.• Motor operated for 16 Hrs daily every day.• Assuming 0.8% improvement in operational efficiency for the SiC motor drive.

Design in SiC products to substantially reduce switching and conduction losses, resulting in lower heat sink cost:

Lower losses lead to higher efficiencies and lower energy consumption, resulting in lifelong savings:

Use SiC products to restructure, not increase overall system cost.

Need to transfer 10kW

IGBT + Si Diode

SiC MOSFET + SiC Diode

SiC MOSFET + SiC Diode

Switching Frequency 20kHz 60kHz 100kHzInductors $62 $35 $20Capacitors $65 $65 $65Cooling $45 $30 $38Power Semiconductors $10 $40 $40Total $182 $170 $163

Use SiC Performance Advantages to Reduce Total Cost

Comparison based on:• 10kW interleaved boost converter• Output Power: 10kW

Design Options using SiC to reduce $ per WattOption 1

Higher Power50 HP instead of 30 HP

Option 2Smaller Cooling

at same 30 HP

Option 3 Smaller Cooling + Higher Frequency

at same 30 HP

FSW = 8 kHzRØ HS = 0.16 °C/WPLOSS Total = 369 W

n = 99.0%TJ = 127 °C

FSW = 8 kHzRØ HS = 0.55 °C/W (1/3 size)

PLOSS Total = 153 Wn = 99.3%

TJ = 135 °C

FSW = 35 kHz (>4×) RØ HS = 0.4 °C/W (2/3 size)

PLOSS Total = 204 W n = 99.1%

TJ = 136 °C

SiDrive

SiCDrive

SiDrive

Si Heat Sink

SiC HS

30 HP

50 HPSiCDrive

• Input Voltage Range: 300VDC - 450VDC• Output/DC-Link Voltage: 640VDC


SiCtech hub

Discrete & Module Diodes Discrete MOSFETs MOSFET Modules SiC/Si Hybrid

700V, 1200V 600V, 700V, 500V, 600V, 800V

1700V 1200V, 1700V 900V, 1000V, 1200V

Current 10A – 90A 5A – 130A 20A – 480A 11A – 480A

RDS(on) — 33mW – 800m W 6mW – 110mW —

D3PAK, SOT-227, D3PAK, D3, SOT-227, D3PAK, TO-247, T-MAX,

SP1, TO-220, TO-247, SP1, SP3, SP3F, SOT-227, SP1, SP3F,

TO-247-2, TO-247 SOT-227 SP6, SP6-P SP4, SP6, SP6-P

Voltage — —

Current — —

RDS(on) — —

Voltage — — 600V, 900V, 1200V 600V, 650V, 1200V

Current — — 20A – 70A 10A –100A

RDS(on) — — 20mW – 80mW —

Voltage 600V, 650V, 1200V, 1700V 900V, 1000V, 1200V, 1700V 1200V, 1700V —

Current 1A - 50A 5A -90A 20A-325A —

RDS(on) — 25mW – 1000m W 3.6mW – 80m W —

SiC Discrete and Module Offering

Packages (mm)

Packages (mm)

Packages (mm)

Packages (mm)

50x120, 48x94, 62x108, 62x122, 130x140, 56x110, 80x110,

67x131, Super Mini DIP——

——33x66 (Flow 0) 37x82 (Flow 1)

47x108 (Flow 2)

36x72 (Flow 1B), 33x66 (Flow 0) 35x37 (Flow 0B), 37x82 (Flow 1)

600V, 650V, 1200V, 1700VVoltage

45x108, 62x106,

High Perf (65x110)

SiC Tech Hub www.richardsonrfpd.com/SiCPower

Realize the benefits of silicon carbide technology with Richardson RFPD’s offering of SiC transistors, diodes, transistor modules and SiC/Si hybrid modules. Subscribe (free!) to our SiC Tech Hub for the latest products and news regarding the adoption of this technology in power electronics circuits.

TO-220-2, TO-220-F2 (Full Pack), TO-247, TO-247-2, TO-252-2,

TO-263-2, QFN, TO-220 Isolated—

TO-247, TO-263-7L, TO-247-4L

Welcome to the SiC Tech Hub,brought to you by Richardson RFPD.

Need a Design Advisor? Contact us.

Contact Richardson RFPD for details.


Reference Designs / Evaluation Kits

Part Number: CRD8DD12P 8kW LLC zero-voltage switching (ZVS) converter Supplier: Wolfspeed

Part Number: CRD-50DD12N 50kW interleaved boost converter evaluation unit Supplier: Wolfspeed

Part Number: KIT8020-CRD-8FF1217P-1 SiC MOSFET/Diode evaluation kit with multiple circuit configurations Supplier: Wolfspeed

Part Number: CRD-060DD12P 60W flyback auxiliary DC power supply Supplier: Wolfspeed

Part Number: CRD-20DD09P-2 20kW Full Bridge Resonant LLC Converter Using 1000V, 65mΩ SiC MOSFET in 4L-TO247 Supplier: Wolfspeed

Part Number: CRD-060DD17P-2 60W Single-end flyback auxiliary power supply using1700V, 1Ω SiC MOSFET in surface mount 7L-D2PAK. Supplier: Wolfspeed

Part Number: CRD-5FF0912P SiC MOSFET evaluation kit featuring 900V, 120mΩ SiC MOSFET in 7L-D2PAK package in half bridge configuration. Supplier: Wolfspeed

Gate Driver Products

Part Number: CGD15FB45P16-Channel SiC gate driver board forWolfspeed CCSxxxM12CM2 modules.Supplier: Wolfspeed

Part Number: CRD-001 Single channel 1200V and 1700V SiC MOSFET gate driver board Supplier: Wolfspeed

Part Number: CGD15HB62P1SiC half-bridge gate driver optimizedfor Wolfspeed 62mm 1200V modulesSupplier: Wolfspeed

Part Number: PT62SCMD12 Dual SiC gate driver for 62mm CASxxxM12BM2 1200V Modules Supplier: Wolfspeed

Part Number: PT62SCMD17 Dual SiC gate driver for 62mm CASxxxM17BM2 1700V Modules Supplier: Wolfspeed

Part Number: CGD15HB62LP SiC half-bridge gate driver optimized for Wolfspeed CAS325M12HM2High Performance 65mm package Supplier: Wolfspeed

Part Number: MSCSICMDD/REF1Dual universal SiC gate driver intended for Microsemi discrete and module products.Supplier: Microsemi

Part Number: ADuM4121, ADuM4135, ADuM4136 High voltage single and dual-channel isolated gate driver ICs with 100kV/usec and 150kV/usec CMTI in 8-lead and 16-lead wide-body SOIC package.Supplier: Analog Devices Inc.

1SC2060P Core

RDHP-1417

SCALE-iDriver

Part Number: RDHP-xxxx Reference designs for adapting standard and planar core products 2SC0115T, 2SC0435T, 2SC0650P, 1SC2060P and SCALE-iDriverTM IC for SiC modules. Supplier: Power Integrations


Package Styles Dimensions in millimeters (mm)

62x108 (D3)

62x108 (SP6P)

43x73 (SP3F)

62x108 (SP6)

SOT-227 (Isotop)

41x52 (SP1)

40x93 (SP4)

D3PAK (TO-268)

TO-220-2 TO-247-2TO-220 TO-247 T-MAX

37x82 (Flow 1)

33x66 (Flow 0)

©2017 Richardson RFPD, Inc. All other product names and logos are trademarks of their respective manufacturers. Rev.3/17 DOC-007R1

62x108 (D3)

TO-252-2 (DPAK)

TO-263-2 (D2PAK)

45x108 (EconoPACKTM 2)

TO-263-7L (7L D2PAK)

QFN 3.3 TO-220-2 and TO-220 Isolated

TO-247TO-220-F2 (Full Pack)

65x110 (High Performance 65mm)

TO-247-4L

62x108 48x94

50x12067x131

80x110 SuperMini DIP

62x122

130x140

56x110

36x72 (Flow 1B)

35x37 (Flow 0B)

47x108(Flow 2)

silicon carbide technology overview - richardson rfpd · 2019-05-15 · silicon carbide technology...

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