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Silicon Carbide (SiC) MOSFET1200 V, 80 mOhm, TO-247-3L,LSIC1MO120E0080

New Product IntroductionOctober, 2017

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Something About SiC MOSFETMuch as the IGBT was revolutionary in the 1980s, today the wide band gap semiconductor material, silicon carbide (SiC), shows increasing promise for revolutionizing the power electronics world once again. The IGBT gave us a transistor capable of high blocking voltages and low on-state (i.e., conduction) losses all contained in a single, well-controlled switching package.

The device is limited, however, in how fast it may be switched, which leads to high switching losses, large and expensive thermal management, and a ceiling regarding system level power conversion efficiency.

The advent of SiC MOSFETs all but eliminates switching losses when compared to an IGBT with similar on-state losses (lower, actually, at light load) and voltage-blocking capability. Accordingly, SiC MOSFETs enable unprecedented efficiency in addition to reducing the overall weight and size of the system.

Like most disruptive technologies, however, the evolution of commercial SiC power devices has traveled a tumultuousroad. This article is intended to put the evolution of the SiC MOSFET in context, and – along with an abridged history ofthe device’s advancements – present its technology merits today and its commercial prospects for the future.

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The Next Revolutionary Technology Will Be The SiC MOSFET

The silicon IGBT was an enormous positive disruption to the power electronics community in the 1980s, and it has been the workhorse of the industry ever since. The next revolutionary technology will be the SiC MOSFET.

Today’s state of the SiC MOSFET indicates resolution on major commercial impediments including price, reliability, ruggedness, and diversification of suppliers. In spite of a price premium over Si IGBTs, the SiC MOSFET has already seen success due to cost-offsetting system-level benefits; the market share for this technology will increase sharply over the next few years as materials costs fall.

After more than forty years of development effort, at last the SiC MOSFET appears poised for widespread commercial success and a substantial role in the green energy movement. Price survey of commercially available SiC

MOSFETs as seen at Digi-Key.

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Power Semiconductor, SiC MOSFET, LSIC1MO120E0080What Is It? / What Does It Do?

§ This device is used as a power semiconductor switch in a wide range of various power conversion systems. This particular device technology enables a unique blend of high operating voltages and fast switching speeds typically not achievable with traditional power transistor solutions.

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Power Semiconductor, SiC MOSFET, LSIC1MO120E0080 What Does It Offer?

Features:§ Ultra-fast switching speeds§ Lower switching losses§ High temperature operation§ High BV and low specific on-

resistance (SiC material properties)

Benefits:§ Higher efficiency

– Smaller heat sinks– Increased power density

§ Higher switching frequencies– Smaller passive filters– Increased power density

§ Device robustness– Wider range of high temp

applications§ Smaller die size per

voltage/current rating

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Power Semiconductor, SiC MOSFET, LSIC1MO120E0080 Ratings and Characteristics

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Ratings and Characteristics (cont. 1)

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Ratings and Characteristics (cont. 2)

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Power Semiconductor, SiC MOSFET, LSIC1MO120E0080 Part Marking

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Power Semiconductor, SiC MOSFET, LSIC1MO120E0080 Mechanical Footprint TO-247-3L

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Power Semiconductor, SiC MOSFET, LSIC1MO120E0080 Littelfuse Key AdvantagesLittelfuse SiC MOSFET LSIC1MO120E0080 offers:§ Extremely low gate charge and output capacitance § Low gate resistance for high-frequency switching§ Normally-off operation at all temperatures§ Ultra-low on-resistance

Littelfuse offers:§ Flexibility in production capability for high volume, growing demand§ Testing and proving services for design and compliance support§ Broad range of power control and circuit protection products & solutions§ Global delivery network§ Trusted global name and support§ Knowledgeable application support and design consultation

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Silicon Carbide (SiC) MOSFET 80 mOhm 1200V in TO-247-3L, Power SemiconductorsMarket and Applications

Applications:§ UPS§ Motor Drives§ Solar Inverters§ Battery Chargers§ Induction Heating§ Switch Mode Power Supplies§ High Voltage DC/DC Converters

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Power Semiconductor, SiC MOSFET, LSIC1MO120E0080 Key Words for Google Search

§ Silicon carbide§ SiC§ MOSFET§ SiC MOSFET§ Switching losses§ Energy efficiency§ fast switching speeds§ power density§ Si IGBT vs. SiC MOSFET§ Si MOSFET vs. SiC MOSFET§ High switching frequency

§ High temperature operation§ Solar Inverter§ Switch Mode Power Supply§ UPS system§ Motor Drive§ High Voltage DC/DC Converters§ Battery Charger§ Induction Heating§ Welder

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Power Semiconductor, SiC MOSFETPublications, Tools, and Reference Materials§ Rugged 1.2 KV SiC MOSFETs Fabricated in High-Volume 150mm CMOS Fab§ White paper : State of the SiC MOSFET§ SiC Power Converter Design Toolkits§ Datasheets

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Power Semiconductor, SiC MOSFETLittelfuse Cross Reference

For detailed cross reference information, please contact:§ Europe: Michael Ketterer

- mketterer@littelfuse.com§ Americas: Kevin Speer

- kspeer@littelfuse.com§ China/Taiwan: Teddy To

- tto@littelfuse.com§ Japan: Koichiro Yoshimoto

- kyoshimoto@littelfuse.com§ India: Navneet Vinaik

- nvinaik@littelfuse.com

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Power Semiconductor, SiC MOSFET Please Contact Us for Further Information§ Product Manager – Michael Ketterer

– mketterer@littelfuse.com– Contact for availability and initial pricing

§ Assistant Product Manager – June Zhang– june.zhang@littelfuse.com– Contact for availability and samples