si4410dy n-channel trenchmos logic level fet · 2017. 2. 18. · si4410dy n-channel trenchmos logic...

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of [email protected] or [email protected], use [email protected] (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via [email protected]). Thank you for your cooperation and understanding,

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SI4410DYN-channel TrenchMOS logic level FETRev. 03 — 4 December 2009 Product data sheet

1. Product profile

1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low on-state resistance

Suitable for high frequency applications due to fast switching characteristics

1.3 Applications

DC motor controlDC-to-DC convertorsLithium-ion battery applications

Notebook computersPortable equipment

1.4 Quick reference data

Table 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 30 V

ID drain current Tamb = 25 °C; pulsed;see Figure 1 and 3

- - 10 A

Ptot total power dissipation

Tamb = 25 °C; pulsed;see Figure 2

- - 2.5 W

Dynamic characteristicsQGD gate-drain charge VGS = 10 V; ID = 10 A;

VDS = 15 V; Tj = 25 °C;see Figure 12

- 7 - nC

Static characteristicsRDSon drain-source

on-state resistanceVGS = 4.5 V; ID = 5 A; Tj = 25 °C;see Figure 10 and 11

- 15 20 mΩ

VGS = 10 V; ID = 10 A; Tj = 25 °C;see Figure 10 and 11

- 11 13.5 mΩ

NXP Semiconductors SI4410DYN-channel TrenchMOS logic level FET

2. Pinning information

3. Ordering information

4. Limiting values

Table 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol1 S source

SOT96-1 (SO8)

2 S source

3 S source

4 G gate

5 D drain

6 D drain

7 D drain

8 D drain

4

5

1

8

S

D

G

mbb076

Table 3. Ordering informationType number Package

Name Description VersionSI4410DY SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 30 V

VGS gate-source voltage -20 20 V

ID drain current Tamb = 70 °C; pulsed; see Figure 1

- 8 A

Tamb = 25 °C; pulsed; see Figure 1 and 3

- 10 A

IDM peak drain current tp ≤ 10 µs; Tamb = 25 °C; pulsed; see Figure 3

- 50 A

Ptot total power dissipation Tamb = 70 °C; pulsed; see Figure 2

- 1.6 W

Tamb = 25 °C; pulsed; see Figure 2

- 2.5 W

Tstg storage temperature -55 150 °C

Tj junction temperature -55 150 °C

Source-drain diodeIS source current Tamb = 25 °C; pulsed - 2.3 A

SI4410DY_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 4 December 2009 2 of 12


Fig 1. Normalized continuous drain current as a function of ambient temperature

Fig 2. Normalized total power dissipation as a function of ambient temperature

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03aa19

0

40

80

120

0 50 100 150 200Tamb (°C)

Ider(%)

03aa11

0

40

80

120

0 50 100 150 200Tamb (°C)

Pder(%)

03ae23

1

10−1

10

102

ID(A)

10−2

VDS (V)10−1 102101

10 s

100 ms

10 ms

1 ms

tp = 10 µs

D.C.

RDSon = VDS/ID

tp

tp

T

P

t

Tδ =




5. Thermal characteristics

Table 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max UnitRth(j-sp) thermal resistance from

junction to solder point- - - K/W

Rth(j-a) thermal resistance from junction to ambient

mounted on a printed-circuit board; minimum footprint; tp ≤ 10 s; see Figure 4

- - 50 K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

03ad49

10−2

10−1

1

10

102

10−4 10−3 10−2 10−1 1 10 102 103tp (s)

Zth(j-amb) (K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02

tp

tp

T

P

t

Tδ =




6. Characteristics

Table 6. CharacteristicsSymbol Parameter Conditions Min Typ Max UnitStatic characteristicsVGS(th) gate-source threshold

voltageID = 250 µA; VDS= VGS; Tj = 25 °C;see Figure 9

1 - - V

IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA

VDS = 30 V; VGS = 0 V; Tj = 55 °C - - 25 µA

IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA

RDSon drain-source on-state resistance

VGS = 4.5 V; ID = 5 A; Tj = 25 °C;see Figure 10 and 11

- 15 20 mΩ

VGS = 10 V; ID = 10 A; Tj = 25 °C;see Figure 10 and 11

- 11 13.5 mΩ

IDSon on-state drain-source current

VDS ≥ 5 V; VGS = 10 V 20 - - A

Dynamic characteristicsQG(tot) total gate charge ID = 10 A; VDS = 15 V; VGS = 5 V;

Tj = 25 °C; see Figure 12- 21.5 34 nC

ID = 10 A; VDS = 15 V; VGS = 10 V; Tj = 25 °C; see Figure 12

- 40 60 nC

QGS gate-source charge - 8 - nC

QGD gate-drain charge - 7 - nC

td(on) turn-on delay time VDS = 25 V; RL = 25 Ω; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C

- 13.5 30 ns

tr rise time - 9 20 ns

td(off) turn-off delay time - 70 100 ns

tf fall time - 30 80 ns

gfs transfer conductance VDS = 15 V; ID = 10 A; Tj = 25 °C;see Figure 13

- 34 - S

Source-drain diodeVSD source-drain voltage IS = 2.3 A; VGS = 0 V; Tj = 25 °C;

see Figure 14- 0.7 1.1 V

trr reverse recovery time IS = 2.3 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C

- 50 80 ns




Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values

Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values

Fig 7. Sub-threshold drain current as a function of gate-source voltage

Fig 8. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

03ad50

0

10

20

30

40

50

0 0.5 1 1.5VDS (V)

ID(A)

3 V

3.2 V

3.4 V

3.6 V

3.8 V10 V

2.8 V

5 V

VGS = 2.6 V

03ad52

0

10

20

30

40

50

0 1 2 3 4VGS (V)

ID

(A)VDS > ID x RDSon

Tj = 150 °C25 °C

03aa36

10-6

10-5

10-4

10-3

10-2

10-1

0 1 2 3VGS (V)

ID(A)

maxtypmin

03ad54

10

103

104

10−1 1 10 102VDS (V)

C

(pF)

Ciss

Coss

Crss




Fig 9. Gate-source threshold voltage as a function of junction temperature

Fig 10. Drain-source on-state resistance as a function of drain current; typical values

Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature

Fig 12. Gate-source voltage as a function of gate charge; typical values

03aa33

0

0.5

1

1.5

2

2.5

-60 0 60 120 180Tj (°C)

VGS(th)(V)

max

typ

min

03ad51

0

0.01

0.02

0.03

0 10 20 30 40 50ID (A)

RDSon(Ω)

Tj = 25 °C VGS = 3.2 V

5 V

10 V

3.4 V 3.6 V

4.5 V

3.8 V

03ad57

−60 0 60 120 180Tj (°C)

0

0.5

1

1.5

2

a

03ad55

0

2

4

6

8

10

0 10 20 30 40QG (nC)

VGS

(V)ID = 10 A

Tj = 25 ºC

VDD = 15 V




Fig 13. Forward transconductance as a function of drain current; typical values

Fig 14. Source current as a function of source-drain voltage; typical values

03ae24

0

10

20

30

40

0 10 20 30 40 50ID (A)

gfs

(S)

Tj = 25 °C

150 °C

VDS > ID x RDSon

03ad53

0

10

20

30

40

50

0 0.4 0.8 1.2 1.6VSD (V)

IS(A)

Tj = 25 °C150 °C

VGS = 0 V




7. Package outline

Fig 15. Package outline SOT96-1 (SO8)

UNITA

max. A1 A2 A3 bp c D(1) E(2) (1)e HE L Lp Q Zywv θ

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE IEC JEDEC JEITA

mm

inches

1.750.250.10

1.451.25

0.250.490.36

0.250.19

5.04.8

4.03.8

1.276.25.8

1.050.70.6

0.70.3 8

0

o

o

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

1.00.4

SOT96-1

X

w M

θ

AA1A2

bp

D

HE

Lp

Q

detail X

E

Z

e

c

L

v M A

(A )3

A

4

5

pin 1 index

1

8

y

076E03 MS-012

0.0690.0100.004

0.0570.049

0.010.0190.014

0.01000.0075

0.200.19

0.160.15

0.050.2440.228

0.0280.024

0.0280.012

0.010.010.041 0.0040.0390.016

0 2.5 5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

99-12-2703-02-18




8. Revision history

Table 7. Revision historyDocument ID Release date Data sheet status Change notice SupersedesSI4410DY_3 20091204 Product data sheet - SI4410DY-02

Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.SI4410DY-02 20010705 Product specification - SI4410DY-01

SI4410DY-01 20010220 Product specification - -




9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com.

9.2 DefinitionsDraft— The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet— A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 DisclaimersGeneral— Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes— NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use— NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications— Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Quick reference data— The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values— Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale— NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license— Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control— This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

9.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

TrenchMOS— is a trademark of NXP B.V.

10. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:[email protected]

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.




11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .11.1 General description . . . . . . . . . . . . . . . . . . . . . .11.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .12 Pinning information. . . . . . . . . . . . . . . . . . . . . . .23 Ordering information. . . . . . . . . . . . . . . . . . . . . .24 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .25 Thermal characteristics . . . . . . . . . . . . . . . . . . .46 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .57 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .98 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .109 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 119.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 119.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1110 Contact information. . . . . . . . . . . . . . . . . . . . . . 11

© NXP B.V. 2009. All rights reserved.For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]

Date of release: 4 December 2009Document identifier: SI4410DY_3

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

1. Product profile1.1 General description1.2 Features and benefits1.3 Applications1.4 Quick reference data

2. Pinning information3. Ordering information4. Limiting values5. Thermal characteristics6. Characteristics7. Package outline8. Revision history9. Legal information9.1 Data sheet status9.2 Definitions9.3 Disclaimers9.4 Trademarks

10. Contact information11. Contents

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