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SEMICONDUCTORS AND SEMIMETALS

VOLUME 22 Lightwave Communications Technology

Volume Editor

W. T. TSANG A T & T BELL LABORATORIES

HOLMDEL, NEW JERSEY

P a r t D / > ^ Photodetectors

1985

® ACADEMIC PRESS, INC. (Harcourt Brace Jovanovich, Publishers) Orlando San Diego New York London Toronto Montreal Sydney Tokyo

Contents

LIST OF CONTRIBUTORS vii

TREATISE FOREWORD ix

FOREWORD xi PREFACE xv

Chapter 1 Physics of Avalanche Photodiodes

Federico Capasso

I. Introduction 2 II. Theory of Impact Ionization 3

III. Avalanche Multiplication and Measurement of Ionization Rates 66 IV. Avalanche Photodiodes with Enhanced Ionization Rate Ratios

and Solid-State Photomultipliers 105 References 168

Chapter 2 Compound Semiconductor Photodiodes

T. P. Pearsall and M. A. Pollack

I. Introduction 174 II. Compound Semiconductor Photodiode Principles 186

III. Compound Semiconductor Photodiode Properties 198 IV. Integrated Photodiode Devices 225

References 241

Chapter 3 Silicon and Germanium Avalanche Photodiodes

Takao Kaneda

I. Introduction 247 II. Design Considerations 249

III. Silicon Avalanche Photodiod.es 263 IV. Germanium Avalanche Photodiodes 289 V. Minimum Detectable Power 320

VI. Concluding Comments 324 References 326

v

VI CONTENTS

Chapter 4 Sensitivity of Avalanche Photodetector Receivers for High-Bit-Rate Long-Wavelength Optical Communication Systems

S. R. Forrest

I. Introduction 329 II. Digital Receiver Sensitivity 331

III. Receiver Noise Current 336 IV. Sensitivity Calculations 344 V. Examples 358

VI. Sources of Sensitivity Degradation 367 VII. Conclusions 385

References 385

Chapter 5 Phototransistors for Lightwave Communications /. С Campbell

List of Symbols 389 I. Introduction 390

II. Gain Characteristics 392 III. Transient Response and Bandwidth 411 IV. Noise Characteristics 415 V. Avalanche Effects 423

VI. Novel Structures 431 VII. Photosensitivity of Field-Effect Transistors 440

VIII. Summary 444 References 445

INDEX 449 CONTENTS OF VOLUME 22 453