semiconductor heterostructures for photonic and electronic...

Semiconductor Heterostructures forPhotonic and Electronic Applications

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Cambridge University Press978-1-107-40958-3 - Materials Research Society Symposium Proceedings: Volume 281:Semiconductor Heterostructures for Photonic and Electronic ApplicationsEditors: Charles W. Tu, Derek C. Houghton and Raymond T. TungFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 281

Semiconductor Heterostructures forPhotonic and Electronic Applications

Symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.

EDITORS:

Charles W. TuUniversity of California at San Diego

La Jolla, California, U.S.A.

Derek C. HoughtonNational Research Council of Canada

Ottawa, Ontario, Canada

Raymond T. TungAT&T Bell Laboratories

Murray Hill, New Jersey, U.S.A.

MATERIALS RESEARCH SOCIETYPittsburgh, Pennsylvania






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© Materials Research Society 1993

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Contents

PREFACE xv

ACKNOWLEDGMENTS xvii

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xviii

PART I: III-V EPITAXY AND CHARACTERIZATION

*RECENT DEVELOPMENTS IN GAS SOURCE MOLECULAR BEAM EPITAXY 3J.E. Cunningham

MANIFESTATION OF THE DX CENTRE IN HEAVILY 6-DOPED GaAs(Si) 19S. Arscott, M. Missous, L. Dobaczewski, P.C. Harness, D.K. Maude,and J.C. Portal

DELTA DOPING FOR DEEP LEVEL ANALYSIS IN SEMICONDUCTORS 25J. Piprek, P. Krispin, H. Kostial, and K.W. Boer

THE NEGATIVE PERSISTENT PHOTOCONDUCTIVITY IN THE DEEPQUANTUM WELLS 31

Ikai Lo, W.C. Mitchel, C.E. Stutz, and M.Y. Yen

CARBON INCORPORATION IN GaAs GROWN BY UHVCVD USINGTRIMETHYLGALLIUM AND ARSINE 37

Seong-Ju Park, Jeong-Rae Ro, Jae-Ki Sim, and El-Hang Lee

SELF-COMPENSATION OF DONORS IN GaAs GROWN BY MOCVD 43Gennady V. Andreyev and Vladimir M. Maslovsky

USE OF VALVED, SOLID GROUP V SOURCES FOR THE GROWTH OFGaAs/GalnP HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY 49

F.G. Johnson, G.W. Wicks, R.E. Viturro, and R. LaForce

ON THE GROWTH- AND ANNEALING-TEMPERATUREDEPENDENCE OF THE ELECTRICAL PROPERTIES OFGaO51InOtfP/GaAs HETEROSTRUCTURES GROWN BY MOMBE 55

E.G. Paloura, A. Ginoudi, N. Frangis, and A. Christou

EXCITON MAGNETOLUMINESCENCE STUDIES IN ORDERED ANDDISORDERED Ir^ 48Ga0 5.P SEMICONDUCTOR ALLOYS 61

E.D. Jones, D.M. Follstaedt, S.K. Lyo, and R.P. Schneider, Jr.

OPTICAL DETECTION OF BAND GAP VARIATIONS DUE TO ORDERING53As ON InP 67\rent, K.A. Bertness, Sarah R. Kurtz, M. Bode, and J.M. Olson

EFFECT OF As OVERPRESSURE ON Mn-INDUCED LAYER DISORDERINGIN AlGaAs-GaAs SUPERLATTICES: AN INVESTIGATION OF THE MnDIFFUSION MECHANISM 73

C.H. Wu, J.I. Malin, and K.C. Hsieh

EFFECTS OF CONFINEMENT ON SHALLOW IMPURITIES IN^ ^ A s QUANTUM DOTS 79

Francisco A.P. Ordrio, Oscar Hipolito, and Frangois M. Peeters

*Invited Paper






SURFACE STATES AT LT GaAs-n+ GaAs INTERFACES 85Ashish K. Verma, J.S. Smith, and Eicke R. Weber

BLUE SHIFTING THE EXCITONIC TRANSITION IN MULTIPLE QUANTUMWELLS BY RAPID THERMAL PROCESSING 91

Jay I. Malin and K.C. Hsieh

STUDIES OF INTERFACE FORMATION AND ITS INFLUENCE ONOPTICAL PROPERTIES OF GalnAs/InP QW STRUCTURES 97

W. Seifert, X. Liu, and L. Samuelson

X-RAY DIAGNOSTICS OF LARGE-PERIOD LATTICE-MATCHEDInGaAs/InP SUPERLATTICES 103

J.M. Vandenberg, D. Ritter, R.A. Hamm, S.N.G. Chu, and M.B. Panish

XAFS STUDY ON INTERFACES IN III-V SEMICONDUCTORHETEROSTRUCTURES 109

Kiyoshi Ogata, Kazufumi Suenaga, Asao Nakano, and Teruo Mozume

CONTACT-FREE DETERMINATION OF SCATTERING TIMES INHETEROJUNCTION DEVICE STRUCTURES 115

P. Omling, H. Linke, P. Ramvall, and B.K. Meyer

PHOTOREFLECTANCE CHARACTERIZATION OF THE SEMI-INSULATINGInP SUBSTRATE INTERFACE WITH InGaAs AND InAlAs EPILAYERS 121

Weimin Zhou, H. Shen, J. Pamulapati, M. Dutta, B.R. Bennett, C.H. Perry,and D.W. Weyburne

THE INFLUENCE OF LATTICE MISMATCH ON INDIUM PHOSPHIDEBASED HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) STRUCTURESOBSERVED IN HIGH RESOLUTION MONOCHROMATIC SYNCHROTRONX-RADIATION DIFFRACTION IMAGING 127

Bruce Steiner, James Comas, Wen Tseng, and Uri Laor

ON THE ORIGIN OF THE CONTRAST INHOMOGENEITIES FOUND ONIru ,2A1O 48As LAYERS GROWN ON InP SUBSTRATES AT HIGHTEMPERATURES 133

F. Peiro, A. Cornet, J.R. Morante, and A. Georgakilas

PART II: STRAINED AND RELAXED STRUCTURES

*THE USE OF STRAIN TO OPTIMIZE QUANTUM WELL DEVICEPERFORMANCE 141

Emil S. Koteles

INTERFACIAL QUALITY OF STRAINED-LAYER InGaAs/GaAs QUANTUMWELL LASERS GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY 153

G. Zhang, A. Ovtchinnikov, and M. Pessa

CHARACTERIZATION OF AlGaAs/InGaAs/GaAs HETEROEPITAXIALLAYERS BY TRANSMISSION ELECTRON MICROSCOPY AND ENERGYDISPERSIVE SPECTROSCOPY 161

R.S. Rai, J.M. Tartaglia, W.E. Quinn, and D.C. Martel

HEAVILY CARBON DOPED P-TYPE GaAs/InGaAs STRAINED-LAYERSUPERLATTICES GROWN BY MOMBE 167

Ming Qi, Jinsheng Luo, J. Shirakashi, E. Tokumitsu, S. Nozaki,M. Konagai, and K. Takahashi

*Invited Paper

vi






TEMPERATURE DEPENDENT QUENCHING MECHANISMS OF THELUMINESCENCE OF InGaAs/GaAs STRAINED QUANTUM WELLS 173

F. Martelli, A. D'Ottavi, B. Catania, M.R. Bruni, M.G. Simeone, andM. Zugarini

INFLUENCE OF GROWTH ORIENTATION AND UNIAXIAL STRESS ONTHE ELECTRONIC PROPERTIES OF GaAs/GaAlAs QUANTUM WELLS 179

N. Saidi, K. Zitouni, and A. Kadri

THE INFLUENCE OF THE REAL STRUCTURE ON THE DEFORMATIONSIN LAYER SYSTEMS 185

B. Jenichen and R. Kohler

EXTENDED PSEUDOMORPHIC LIMITS USING COMPLIANT SUBSTRATES 191Y.H. Lo, W.J. Schaff, and D. Teng

CONSTANT TEMPERATURE LEC GROWTH OF UNIFORM COMPOSITIONInGaAs BULK CRYSTALS THROUGH CONTINUOUS SUPPLY OF GaAs 197

K. Nakajima, T. Kusunoki, and K. Kuramata

OPTICAL STUDIES OF InP/GaAs/InP SINGLE STRAINED LAYERS 203Dan Hessman, Mats-Erik Pistol, Janos Olajos, Werner Seifert, Xiao Liu,and Lars Samuelson

ELECTRONIC STRUCTURE OF GaAs/GalnP STRAINED LAYERQUANTUM WELLS 209

K. Rerbal, K. Zitouni, and A. Kadri

STRAIN ANALYSIS ON MBE GROWN InAs/AlSb ULTRATHIN-LAYERSUPERLATTICES USING RAMAN SCATTERING 215

Mitsuaki Yano, Hiroshi Furuse, Masaru Okuizumi, and Masataka Inoue

GRADED BUFFER LAYERS FOR MOLECULAR BEAM EPITAXIAL GROWTHOF HIGH In CONTENT InGaAs ON GaAs FOR OPTOELECTRONICS 221

S.M. Lord, B. Pezeshki, A.F. Marshall, J.S. Harris, Jr., R. Fernandez,and A. Harwit

GROWTH AND CHARACTERIZATION OF InGa, P (x<0.38) ON GaP(lOO)WITH A LINEARLY GRADED BUFFER LAYER BY GAS-SOURCEMOLECULAR BEAM EPITAXY 227

T.P. Chin, J.C.P. Chang, K.L. Kavanagh, C.W. Tu, P.D. Kirchner, andJ.M. Woodall

UNIFORMITY CONTROL IN ELEMENTAL VAPOR TRANSPORT EPITAXY 233A.I. Gurary, G.S. Tompa, R.A. Stall, S. Liang, Y. Lu, and H.C. Kuo

PART III: HIV DEVICES

•MATERIALS AND STRUCTURES FOR ADVANCED III-V HBTs 241P.M. Asbeck, C.W. Tu, M.C. Ho, S.L. Fu, R.C. Gee, and T.P. Chin

•MATERIALS AND DEVICE CHARACTERISTICS OF InAlAs/InGaAs HEMTs 251Pin Ho, M.Y. Kao, P.C. Chao, K.H.G. Duh, P.M. Smith, P.A. Martin,S.M.J. Liu, K.C. Hwang, J.M. Ballingall, T. Yu, and A.W. Swanson

HIGH SPEED InAs/AlSb AND Ii^ 53Ga0 47As/AlAs RESONANT TUNNELINGDIODES 269

D.H. Chow, J.N. Schulman, E. Ozbay, and D.M. Bloom

•Invited Paper

vii






GaAs DEVICES FOR LOW LOSS POWER RECTIFICATION 275L.V. Munukutla, S.H. Cheng, and S.J. Anderson

SELECTIVE IMPLANTATION PATTERNING AND MBE REGROWTHFOR INTEGRATION OF MM-WAVE APPLICATION HETEROJUNCTIONDEVICES 281

Hans Brugger, Claus Wolk, and Harald Miissig

(InAs)1/(GaAs)n SUPERLATTICE QUANTUM WELL LASERS 287J. Lopata, N.K. Dutta, and Naresh Chand

CHARACTERISTICS AND GROWTH OF STRAINED-LAYERInGaAs/GalnAsP/GalnP QUANTUM WELL LASERS 293

G. Zhang, A. Ovtchinnikov, J. Nappi, and H. Asonen

MULTILAYER ALGa, As HETEROSTRUCTURES FOR SECOND-HARMONIC GENERATION 301

S. Janz, F. Chatenoud, H. Dai, E. Vilks, M. Buchanan, R. Normandin,and A.J. Springthorpe

VERTICAL-CAVITY OPTOELECTRONIC STRUCTURES: CAD, GROWTH,AND STRUCTURAL CHARACTERIZATION 307

D.H. Christensen, S.M. Crochiere, J.G. Pellegrino, R.S. Rai,C.A. Parsons, W.F. Tseng, and R.K. Hickernell

OPTICAL CHANNEL WAVEGUIDES IN AlGaAs MULTIPLE QUANTUMWELL STRUCTURES FORMED BY FOCUSED ION BEAM INDUCEDCOMPOSITIONAL MIXING 313

Mukesh Kumar, Gregory N. De Brabander, Peter Chen, Joseph T. Boyd,Andrew J. Steckl, Ann Goo Choo, Howard E. Jackson, Robert D. Burnham,and Stephen C. Smith

ENHANCED PHOTOLUMINESCENCE FROM AlGaAs/GaAs SUPERLATTICEGRATINGS FABRICATED BY Si FIB IMPLANTATION 319

A.J. Steckl, P. Chen, A.G. Choo, H.E. Jackson, J.T. Boyd, A. Ezis,P.P. Pronko, S.W. Novak, and R.M. Kolbas

PART IV: HIV HETEROEPITAXY AND DEVICES

DEFECT REDUCTION IN GaAs GROWN ON Si BY USING SAW-TOOTH-PATTERNED SUBSTRATES 327

Jane G. Zhu, M.M. Al-Jassim, N.H. Karam, and K.M. Jones

THE STRUCTURE OF GaAs GROWN BY CHEMICAL BEAM EPITAXY ONLOW-TEMPERATURE CLEANED SILICON 333

Y.R. Xing, C.J. Kiely, and P.J. Goodhew

TEM STUDY OF THE GROWTH MODES IN ALMBE GaAs LAYERS ON Si 339A. Vila, A. Cornet, J.R. Morante, L. Gonzalez, Y, Gonzalez, F. Briones,and P. Ruterana

CRYSTAL QUALITY AND SURFACE MORPHOLOGY IMPROVEMENT OFMOVPE-GROWN GaAs-ON-Si USING TERTIARYBUTYLARSINE 345

S. Miyagaki, S. Ohkubo, K. Takai, N. Takagi, M. Kimura, Y. Kikuchi,T. Eshita, and K. Takasaki

CATHODOLUMINESCENCE STUDIES OF THERMAL STRESS INPATTERNED GaAs/Si 351

E.H. Lingunis, N.M. Haegel, and N.H. Karam

viii






STRAIN-RELIEVED RELIABLE LASERS GROWN ON Si BY MOCVD 357Takashi Egawa, Yoshiaki Hasegawa, Takashi Jimbo, andMasayoshi Umeno

GaAs/AlGaAs SQW OPTICAL SWITCH ON Si 363T. Yuasa, Y. Nagashima, T. Egawa, T. Jimbo, and M. Umeno

OPTICAL, ELECTRICAL, AND STRUCTURAL CHARACTERIZATION OFGalnAsP/InP LAYERS GROWN ON SILICON SUBSTRATE FOR 1.35 /AmLASER APPLICATIONS 369

K. Mobarhan, C. Jelen, E. Kolev, and M. Razeghi

HIGH-QUALITY InSb GROWTH ON GaAs AND Si BY LOW-PRESSUREMETALORGANIC CHEMICAL VAPOR DEPOSITION 375

Y.H. Choi, R. Sudharsanan, C. Besikci, E. Bigan, and M. Razeghi

GROWTH OF InSb/GaAs LAYERS ON YIG-COATED GGG SUBSTRATE 381C. Jelen, S. Charriere, M. Razeghi, and V.J. Leppert

PART V: Si-Ge EPITAXY AND DEVICES

*SiGe/Si-BIPOLAR AND QUANTUM WELL TRANSISTORS, RESULTS ANDPROSPECTS 387

Ulf Konig

*SiGe HETEROJUNCTIONS TRANSISTORS AND OPTOELECTRONICDEVICES 401

Maurizio Arienzo, James H. Comfort, Emmanuel F. Crabbe",David L. Harame, Subramanian S. Iyer, Vijay P. Kesan,Bernard S. Meyerson, Gary L. Patton, Johannes M.C. Stork,and Yuan-Chen Sun

STUDY OF THE TRANSVERSAL ELECTRON MOBILITY INHETEROJUNCTION BIPOLAR TRANSISTORS WITH STRAINEDSi,_xGe -BASE 409

J. Poortmans, M. Caymax, A. Van Ammel, M. Libezny, and J. Nijs

USE OF LOW TEMPERATURE Si MBE GROWTH TECHNIQUESFOR HIGH PERFORMANCE SiGe/Si ELECTRONICS 415

E.T. Croke, M.J. Harrell, M.E. Mierzwinski, and J.D. Plummer

GROWTH OF Ge-ON-Si STRUCTURES USING REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION 421

Rong Z. Qian, D. Kinosky, A. Mahajan, S. Thomas, J. Fretwell,P. Munguia, S. Banerjee, and A. Tasch

BORON DIFFUSION IN Six xGe STRAINED LAYERS 427N. Moriya, C.A. King, L.C. Feldman, H.S. Luftman, M.L. Green, J. Bevk,and B.E. Weir

DEGRADATION AND RECOVERY OF BORON DOPED STRAINED SILICONGERMANIUM LAYERS AFTER 1-MeV ELECTRON IRRADIATION 433

H. Ohyama, J. Vanhellemont, M.-A. Trauwaert, J. Poortmans, M. Caymax,and P. Clauws

THERMAL STABILITY OF THE STRUCTURAL AND ELECTRONICPROPERTIES OF STRAIN SYMMETRIZED Si Gen SUPERLATTICESAND UNGRADED, NEARLY RELAXED Si, x(5ex 439

P.A. Dafesh, P.M. Adams, V. Arbet-Engels, and K.L. Wang

•Invited Paper

ix






TRANSPORT IN HIGH-MOBILITY Si, xGex HETEROSTRUCTURES GROWNBY MOLECULAR-BEAM EPITAXY " 449

Don Monroe, Y.-H. Xie, E.A. Fitzgerald, and P.J. Silverman

BROAD BAND VS PHONON RESOLVED LUMINESCENCE IN Si, xGe /SiHETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY 455

D.C. Houghton, N.L. Rowell, J.-P. Noel, M.M. Dion, J. McCaffrey,M. Davies, A. Wang, and D.D. Perovic

THE EFFECTS OF COMPOSITION ON THE SPECTRAL LOSSCHARACTERISTICS OF SiGe PLANAR WAVEGUIDE STRUCTURES 461

Yang Zuoya, B.L. Weiss, G. Shao, and F. Namavar

THE INFLUENCE OF STRAIN-MEDIATED MORPHOLOGICAL CHANGESON THE STRUCTURAL AND OPTICAL PROPERTIES OF MBE-GROWNGeSi/Si 467

D.D. Perovic, J. Whitehurst, J.P. Noel, N.L. Rowell, and D.C. Houghton

RAMAN SCATTERING STUDIES OF Si, xGe LAYERS GROWN BYATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION 473

C.H. Perry, Feng Lu, F. Namavar, and N.L. Rowell

TIME-RESOLVED REFLECTIVITY STUDY OF SOLID-PHASE EPITAXIALREGROWTH IN RELAXED AND STRAINED Si,.xGex EPILAYERS 479

T.E. Haynes, C. Lee, and K.S. Jones

ATOMIC OXIDATION OF ULTRA THIN SiGe USING AFTERGLOWOXYGEN PLASMA 485

P.C. Chen, J.Y. Lin, Y.J. Hsu, and H.L. Hwang

PRODUCTION OF GexSi, x AND SiC FILMS ON SI SUBSTRATES USINGPARTICLE-BEAM TECHNOLOGIES 491

V.A. Kagadey, O.B. Ladizhensky, N.I. Lebedeva, E.N. Matin,D.I. Proskurovsky, L.V. Yakovleva, and V.I. Zaporozhchenko

PART VI: POROUS Si

FABRICATION PROCESS OF POROUS SILICON-BASEDOPTOELECTRONIC DEVICES 499

Nader M. Kalkhoran

SINGLE CRYSTALLINE/POROUS AMORPHOUS SUPERLATTICEFORMATION BY THE ETCHING OF MBE GROWN Si/Si! xGex LAYERSON Si SUBSTRATES 507

T. George, W.T. Pike, R.W. Fathauer, E.W. Jones, and A. Ksendzov

STRUCTURAL INVESTIGATION OF PHOTOLUMINESCENT POROUS SiBY TRANSMISSION ELECTRON MICROSCOPY 513

S. Shih, K.H. Jung, and D.L. Kwong

SUB-MICRON SELECTIVE PHOTOLUMINESCENCE IN POROUS Si BYFOCUSED ION BEAM IMPLANTATION 519

A.J Steckl, J. Xu, H.C. Mogul, and S. Mogren

VUV- AND SOFT X-RAY-INDUCED OPTICAL LUMINESCENCE ANDX-RAY ABSORPTION FINE STRUCTURES OF POROUS SILICON 525

T.K. Sham, D.T. Jiang, I. Coulthard, J.W. Lorimer, X.H. Feng,K.H. Tan, S.P. Frigo, R.A. Rosenberg, D.C. Houghton, andB. Bryskiewicz






LUMINESCENT POROUS SILICON INVESTIGATED BY ACCELERATORANALYTICS 531

Peter Steiner, Jens Weidhaas, and Walter Lang

PART VII: II-VI AND IV-VI EPITAXY AND DEVICES

*BLUE II-VI LASER DIODES AND LIGHT EMITTING DIODES 539R.L. Gunshor, A.V. Nurmikko, and N. Otsuka

BLUE LASERS BASED ON II-VI SEMICONDUCTOR HETEROSTRUCTURES 543Z. Yu, J. Ren, Y. Lansari, K.J. Gossett, B. Sneed, K.A. Bowers,J.W. Cook, Jr., and J.F. Schetzina

INTEGRATED HETEROSTRUCTURE DEVICES (IHDS): A NEW APPROACHFOR THE FABRICATION OF HIGH-EFFICIENCY BLUE/GREEN LIGHTEMITTERS BASED ON II-VI MATERIALS 549

Y. Lansari, Z. Yu, J. Ren, C. Boney, J.W. Cook, Jr., and J.F. Schetzina

ACTIVATION OF N-ACCEPTOR IN MOCVD-ZnSe BY EXCIMER LASERANNEALING 555

Nallan Padmapani, G.F. Neumark, N. Taskar, and D. Dorman

TRANSMISSION ELECTRON MICROSCOPY OF NITROGEN DOPEDZnSe/GaAs 561

L.H. Kuo, L. Salamanca-Riba, J.M. DePuydt, H. Cheng, and J. Qiu

SPECTROSCOPIC INVESTIGATION OF Li AND P-DOPED ZnSe GROWNBY MOLECULAR BEAM EPITAXY 567

Y. Zhang, B.J. Skromme, and H. Cheng

FABRICATION OF SHORT PERIOD ZnSe-GaAs SUPERLATTICES BY MOVPE 573Mitsuru Funato, Shizuo Fujita, and Shigeo Fujita

GROWTH AND OPTICAL CHARACTERIZATION OF ZnMnTe GROWN BYMOLECULAR BEAM EPITAXY 579

John L. Reno, Eric D. Jones, and Eugene L. Venturini

TEM INVESTIGATIONS OF CdTe/GaAs(001) INTERFACES 585J.E. Angelo, W.W. Gerberich, G. Bratina, L. Sorba, and A. Franciosi

CW Nd:YAG LASER DEPOSITION OF CdS THIN FILMS 591X.W. Wang, D.J. Finnigan, R. Noble, and P. Mattocks

TRAPPING AND LUMINESCENCE MECHANISM STUDIES INSrS:Eu2+,Sm3+ THIN FILMS AT VARIOUS TEMPERATURES 597

Susan Z. Hua, L. Salamanca-Riba, M. Wuttig, and P.K. Soltani

INTERFACE CHARACTERIZATION OF PbTe/BaSi/SiHETEROSTRUCTURES GROWN USING MBE 603

F. Santiago, D. Woody, T.K. Chu, and C.A. Huber

MOLECULAR BEAM EPITAXY OF PbTe/EuTe SUPERLATTICES 609G. Springholz and G. Bauer

OPTICAL PROPERTIES AND BAND OFFSET OF PbTe/Pb, Eu Te DILUTEDMAGNETIC SEMICONDUCTOR MULTIQUANTUM WELLS STUDIED BYTRANSMISSION AND PHOTOCONDUCTIVITY MEASUREMENTS 615

Shu Yuan, H. Krenn, G. Springholz, G. Bauer, and M. Kriechbaum

*Invited Paper






PART VIII: METAL SEMICONDUCTOR STRUCTURES

THE FABRICATION OF NiSi2/Si(100) INTERFACES WITHCONTROLLED MORPHOLOGIES 623

J.P. Sullivan, R.T. Tung, F. Schrey, and W.R. Graham

INCREASE IN SCHOTTKY BARRIER HEIGHT IN THE CoSi,/Si(100)INTERFACE CAUSED BY HYDROGEN " 629

A.D. Marwick, M.O. Aboelfotoh, and R. Casparis

ELECTRICAL CONTACTS TO METASTABLE GeYSi, x USING Pd.SiAS A TRANSPORT LAYER " 635

Richard G. Purser, Jay W. Strane, and James W. Mayer

GROWTH OF SINGLE CRYSTAL Si/NiSi2/Si(100) AND SiCoSi2/Si(100)STRUCTURES BY MOLECULAR BEAM EPITAXY AND FURNACEANNEALING 641

R.T. Tung, D.J. Eaglesham, F. Schrey, and J.P. Sullivan

ELECTRICAL AND STRUCTURAL PROPERTIES OF COBALTANNEALED ON SILICON-GERMANIUM EPILAYERS 647

G. Sarcona, F. Lin, M.K. Hatalis, A.F. Cserhati, Eva Austin,and D.W. Greve

BEEM INVESTIGATION OF OXIDE AND SULFIDE PASSIVATED GaAs 653A. Alec Talin, R. Stanley Williams, and Karen L. Kavanagh

PASSIVATION OF GaAs BY NOVEL P2S<;/(NH4)7SX SULFURIZATIONTECHNIQUES " 659

J.T. Hsieh, C.Y. Sun, and H.L. Hwang

ELECTRICAL AND STRUCTURAL PROPERTIES OF Ti CONTACTSON AN ATOMICALLY CLEAN N-TYPE GaAs SURFACE 665

X.W. Lin, Z. Liliental-Weber, W. Swider, T. McCants, N. Newman,W.E. Spicer, J. Washburn, and E.R. Weber

FORMATION AND ELECTRONIC STRUCTURE OF THE Mn/GaAs(100)INTERFACE 671

X. Jin, M. Zhang, G.S. Dong, Z.S. Li, Xun Wang, and X.G. Zhu

STRUCTURE OF CHALCOGEN-STABILIZED GaAs INTERFACE 677Shinichiro Takatani, Asao Nakano, Kiyoshi Ogata, Takeshi Kikawa,and Masatoshi Nakazawa

A TUNABLE SCHOTTKY BARRIER TO n-GaAs USING Ni(Ga,Al)CONTACTS 683

C-P. Chen, C-H. Jan, Y.A. Chang, and T. Kuech

THE STUDY ON THE Pt BARRIER EFFECT IN Al/Pt/Ti/n-GaAs 689T. Kuragaki, R. Hattori, K. Yajima, K. Sato, H. Takano, M. Otsubo,and S. Mitsui

THE EFFECTS OF GROWTH SEQUENCE ON THE ELECTRONICPROPERTIES OF Al-Ge-Ni OHMIC CONTACTS ON (001) GaAs 695

W.V. Lampert, T.W. Haas, E.S. Lambers, and Paul H. Holloway

CHARACTERIZATION OF nGaAs-Au SCHOTTKY DIODES AS GRATINGCOUPLED PHOTODETECTORS 701

Kannan Krishnaswami, A.S. Karakashian, and C. Wong

XII






MICROSTRUCTURE ANALYSIS OF THERMALLY STABLE OHMICCONTACT TO BOTH n AND p+-GaAs 709

W.Y. Han, H.S. Lee, Y. Lu, M.W. Cole, L.M. Casas, A. DeAnni,K.A. Jones, and L.W. Yang

SCHOTTKY BARRIER FORMATION AND LONG TERM STABILITY OFMETAL/n-InP INTERFACES 715

Z.Q. Shi and W.A. Anderson

X-RAY STUDIES OF GaSb/Sb HETEROSTRUCTURE AND MULTILAYERS:A NEW SEMIMETAL/SEMICONDUCTOR SYSTEM 721

A. Vigliante, P.C. Chow, S.C. Moss, J.A. Dura, W.C. Wang,and T.D. Golding

STUDY OF OHMIC CONTACTS ON P-TYPE ZnSe AND ZnTe EPITAXIALLAYERS GROWN BY MOLECULAR BEAM EPITAXY 727

C. Piskoti, B. Mykolajenko, and M. Vaziri

PART IX: INSULATORS/NITRIDES/CARBIDES/ETC.

•GROWTH AND DEVICE APPLICATIONS OF EPITAXIAL INSULATORSON SEMICONDUCTORS 735

Hiroshi Ishiwara

GROWTH AND CHARACTERIZATION OF EPITAXIAL BaF2 ON InP 747Q.X. Jia and W.A. Anderson

•GROWTH AND DOPING OF GaN FILMS BY ECR-ASSISTED MBE 753T.D. Moustakas and R.J. Molnar

HIGH MOBILITY GaN FILMS PRODUCED BY ECR-ASSISTED MBE 765R.J. Molnar, T. Lei, and T.D. Moustakas

GaN-ALGa, XN HETEROSTRUCTURES DEPOSITION BY LOW PRESSUREMETALORGANIC CHEMICAL VAPOR DEPOSITION FOR METALINSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MISFET)DEVICES 769

M. Asif Khan, J.N. Kuznia, A.R. Bhattarai, and D.T. Olson

GaN/Al G^ N WURTZITE SEMICONDUCTOR SUPERLATTICES 775Snang Yuan Ren and John D. Dow

ELECTRONIC STRUCTURE OF WIDE-BAND-GAP CHALCOPYRITES 781A. Petukhov, W.R.L. Lambrecht, and B. Segall

GROWTH AND CHARACTERIZATION OF LAYERED STRUCTURES OFSILICON CARBIDE AND ALUMINUM NITRIDE 787

B.S. Sywe, Z.J. Yu, J.H. Edgar, and J. Chaudhuri

HETEROPOLYTYPE GROWTH OF BETA SILICON CARBIDE ONALPHA SILICON CARBIDE BY LOW PRESSURE CHEMICAL VAPORDEPOSITION AT 1150 C 793

K.J. Irvine, M.G. Spencer, and V.A. Dmitriev

EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALINGON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE 797

M. Yoshikawa, Y. Morita, H. Itoh, I. Nashiyama, H. Okumura,S. Misawa, and S. Yoshida

•Invited Paper

XIII






OPTICAL CHARACTERIZATION OF AMORPHOUS SiN :H FILMSPREPARED BY PLASMA-ENHANCED CVD 803

Rung-Ywan Tsai, L.C. Kuo, and F.C. Ho

THE OPTICAL PROPERTIES OF PLASMA-DEPOSITED SiO2 AND Si3N4BRAGG REFLECTORS IN THE SPECTRAL RANGE FROM 1.8 TO 3.0 eV 809

D.J. Stephens, S.S. He, G. Lucovsky, H. Mikkelsen, K. Leo, and H. Kurz

CHEMICALLY MODIFIED SECOND HARMONIC GENERATION ATSURFACES ON VICINAL Si(lll) WAFERS 815

U. Emmerichs, C. Meyer, K. Leo, H. Kurz, C.H. Bjorkman,C.E. Shearon, Jr., Y. Ma, T. Yasuda, and G. Lucovsky

THE EFFECT OF QUANTUM WELL STRUCTURES ON THETHERMOELECTRIC FIGURE OF MERIT 821

L.D. Hicks and M.S. Dresselhaus

AUTHOR INDEX 827

SUBJECT INDEX 833

XIV






Preface

The following is a compilation of most of the papers presented at Symposium D,Semiconductor Heterostructures for Photonic and Electronic Applications, of the 1992Fall Meeting of the Materials Research Society. The objective of the symposium wasto bring together materials scientists involved in different materials systems and deviceapplications to create an interdisciplinary environment for cross fertilization.Symposium D covered a wide range of materials, from porous Si and SiGe, to III-Vand II-VI, to metals and insulators, with the goal of photonic and electronic applica-tions. The success of our objective, which is documented in this volume, is attributedto the importance of semiconductor heterostructures, the continuing presence of thistopic in Materials Research Society meetings, and the active participation of theattendees. In addition, the symposium was very notable for its international flavor, witha very strong presence from European and Asian colleagues.

C.W. TuD.C. HoughtonR.T. Tung

March 1993

xv






Acknowledgments

We would like to thank the following companies for their generous financial supportof the symposium:

EPI Systems Division/Chorus CorporationFisons Instruments/VG Semicon

Bandgap Technology CorporationIntevac MBE Equipment Division

Superior Vacuum Technology

We would also like to thank the invited speakers for giving excellent reviews oftheir subjects. They made the symposium as educational and exciting as many attendeesexpressed later. They are:

Maurizio Arienzo Pin HoPeter M. Asbeck Hiroshi IshiwaraJohnC. Bean Ulf KonigRaj Bhat Emil S. KotelesLeigh T. Canham Ted D. MoustakasJohn E. Cunningham Alice E. WhiteRobert L. Gunshor

We would like to thank our session chairs for their help in running the symposium:

John C. Bean Ted D. MoustakasJohn E. Cunningham Maneji RazeghiRobert L. Gunshor Jan F. SchetzinaHiroshi Ishiwara E. Fred SchubertL.C. Kimerling Parvez UppalEl-Hang Lee

Most importantly, we would like to thank all the authors for the high quality oftheir oral or poster presentations in making the symposium a success. We also wish tothank the authors for their manuscripts, and the reviewers for turning in manuscripts ina timely manner.

Finally, we wish to thank the MRS staff, the MRS Publications Department, andVicki Postula of UCSD for their help with the symposium proceedings.

XVII






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 258—Amorphous Silicon Technology—1992, M.J. Thompson,Y. Hamakawa, P.G. LeComber, A. Madan, E. Schiff, 1992,ISBN: 1-55899-153-0

Volume 259—Chemical Surface Preparation, Passivation and Cleaning forSemiconductor Growth and Processing, RJ . Nemanich, C.R. Helms,M. Hirose, G.W. Rubloff, 1992, ISBN: 1-55899-154-9

Volume 260—Advanced Metallization and Processing for Semiconductor Devices andCircuits II, A. Katz, Y.I. Nissim, S.P. Murarka, J.M.E. Harper, 1992,ISBN: 1-55899-155-7

Volume 261—Photo-Induced Space Charge Effects in Semiconductors: Electro-optics,Photoconductivity, and the Photorefractive Effect, D.D. Nolte,N.M. Haegel, K.W. Goossen, 1992, ISBN: 1-55899-156-5

Volume 262—Defect Engineering in Semiconductor Growth, Processing and DeviceTechnology, S. Ashok, J. Chevallier, K. Sumino, E. Weber, 1992,ISBN: 1-55899-157-3

Volume 263—Mechanisms of Heteroepitaxial Growth, M.F. Chisholm, B.J. Garrison,R. Hull, LJ . Schowalter, 1992, ISBN: 1-55899-158-1

Volume 264—Electronic Packaging Materials Science VI, P.S. Ho, K.A. Jackson,C-Y. Li, G.F. Lipscomb, 1992, ISBN: 1-55899-159-X

Volume 265—Materials Reliability in Microelectronics II, C.V. Thompson,J.R. Lloyd, 1992, ISBN: 1-55899-160-3

Volume 266—Materials Interactions Relevant to Recycling of Wood-Based Materials,R.M. Rowell, T.L. Laufenberg, J.K. Rowell, 1992,ISBN: 1-55899-161-1

Volume 267—Materials Issues in Art and Archaeology IE, J.R. Druzik,P.B. Vandiver, G.S. Wheeler, I. Freestone, 1992, ISBN: 1-55899-162-X

Volume 268—Materials Modification by Energetic Atoms and Ions, K.S. Grabowski,S.A. Barnett, S.M. Rossnagel, K. Wasa, 1992, ISBN: 1-55899-163-8

Volume 269—Microwave Processing of Materials HI, R.L. Beatty, W.H. Sutton,M.F. Iskander, 1992, ISBN: 1-55899-164-6

Volume 270—Novel Forms of Carbon, C.L. Renschler, J. Pouch, D. Cox, 1992,ISBN: 1-55899-165-4

Volume 271—Better Ceramics Through Chemistry V, M.J. Hampden-Smith,W.G. Klemperer, C.J. Blinker, 1992, ISBN: 1-55899-166-2

Volume 272—Chemical Processes in Inorganic Materials: Metal and SemiconductorClusters and Colloids, P.D. Persans, J.S. Bradley, R.R. Chianelli,G. Schmid, 1992, ISBN: 1-55899-167-0

Volume 273—Intermetallic Matrix Composites II, D. Miracle, J. Graves, D. Anton,1992, ISBN: 1-55899-168-9

Volume 274—Submicron Multiphase Materials, R. Baney, L. Gilliom, S.-I. Hirano,H. Schmidt, 1992, ISBN: 1-55899-169-7

Volume 275—Layered Superconductors: Fabrication, Properties and Applications,D.T. Shaw, C.C. Tsuei, T.R. Schneider, Y. Shiohara, 1992,ISBN: 1-55899-170-0

Volume 276—Materials for Smart Devices and Micro-Electro-Mechanical Systems,A.P. Jardine, G.C. Johnson, A. Crowson, M. Allen, 1992,ISBN: 1-55899-171-9

Volume 277—Macromolecular Host-Guest Complexes: Optical, Optoelectronic, andPhotorefractive Properties and Applications, S.A. Jenekhe, 1992,ISBN: 1-55899-172-7

Volume 278—Computational Methods in Materials Science, J.E. Mark,M.E. Glicksman, S.P. Marsh, 1992, ISBN: 1-55899-173-5






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 279—Beam-Solid Interactions—Fundamentals and Applications, M.A. Nastasi,N. Herbots, L.R. Harriott, R.S. Averback, 1993, ISBN: 1-55899-174-3

Volume 280—Evolution of Surface and Thin Film Microstructure, H.A. Atwater,E. Chason, M. Grabow, M. Lagally, 1993, ISBN: 1-55899-175-1

Volume 281—Semiconductor Heterostructures for Photonic and Electronic Applications,D.C. Houghton, C.W. Tu, R.T. Tung, 1993, ISBN: 1-55899-176-X

Volume 282—Chemical Perspectives of Microelectronic Materials HI, C.R. Abernathy,C.W. Bates, D.A. Bohling, W.S. Hobson, 1993, ISBN: 1-55899-177-8

Volume 283—Microcrystalline Semiconductors—Materials Science & Devices,Y. Aoyagi, L.T. Canham, P.M. Fauchet, I. Shimizu, C.C. Tsai, 1993,ISBN: 1-55899-178-6

Volume 284—Amorphous Insulating Thin Films, J. Kanicki, R.A.B. Devine,W.L. Warren, M. Matsumura, 1993, ISBN: 1-55899-179-4

Volume 285—Laser Ablation in Materials Processing—Fundamentals and Applications,B. Braren, J. Dubowski, D. Norton, 1993, ISBN: 1-55899-180-8

Volume 286—Nanophase and Nanocomposite Materials, S. Komarneni, J.C. Parker,GJ. Thomas, 1993, ISBN: 1-55899-181-6

Volume 287—Silicon Nitride Ceramics—Scientific and Technological Advances,I-W. Chen, P.F. Becher, M. Mitomo, G. Petzow, T-S. Yen, 1993,ISBN: 1-55899-182-4

Volume 288—High-Temperature Ordered Intermetallic Alloys V, I. Baker,J.D. Whittenberger, R. Darolia, M.H. Yoo, 1993, ISBN: 1-55899-183-2

Volume 289—Flow and Microstructure of Dense Suspensions, L.J. Struble,C.F. Zukoski, G. Maitland, 1993, ISBN: 1-55899-184-0

Volume 290—Dynamics in Small Confining Systems, J.M. Drake, D.D. Awschalom,J. Klafter, R. Kopelman, 1993, ISBN: 1-55899-185-9

Volume 291—Materials Theory and Modelling, P.D. Bristowe, J. Broughton,J.M. Newsam, 1993, ISBN: 1-55899486-7

Volume 292—Biomolecular Materials, S.T. Case, J.H. Waite, C. Viney, 1993,ISBN: 1-55899-187-5

Volume 293—Solid State Ionics m , G-A. Nazri, J-M. Tarascon, M. Armand, 1993,ISBN: 1-55899-188-3

Volume 294—Scientific Basis for Nuclear Waste Management XVI, C.G. Interrante,R.T. Pabalan, 1993, ISBN: 1-55899-189-1

Volume 295—Atomic-Scale Imaging of Surfaces and Interfaces, D.K. Biegelson,D.S.Y. Tong, D.J. Smith, 1993, ISBN: 1-55899-190-5

Volume 296—Structure and Properties of Energetic Materials, R.W. Armstrong,JJ. Gilman, 1993, ISBN: 1-55899-191-3

Prior Materials Research Society Symposium Proceedingsavailable by contacting Materials Research Society






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