s6 diode
TRANSCRIPT
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LESHAN RADIO COMPANY, LTD.
S61/3
Silicon Variable Capacitance Diode
For UHF and TV/TR tuners Large capacitance ratio, low series resistance
CASE 477 02, STYLE 1SOD 323
1
2
BB 535
2ANODE
1CATHODE
MAXIMUM RATINGSParameter Symbol Value Unit
Diode Reverse Voltage V R 30 VPeak reverse voltage ( R > 5k) V RM 35 VForward Current I F 20 mAOperating temperature range T op - 55 ~ + 125 CStorage temperature T stg - 55 ... + 150 C
THERMAL RESISTANCE Parameter Symbol Value Unit
Junction - ambient R thJA
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LESHAN RADIO COMPANY, LTD.
S62/3
BB 535
20
18
16
14
12
10
8
6
4
2
00 5 10 15 20 25 30
Diode capacitance C T = f ( V R ) f = 1MHz
Temperature coefficient of the diodecapacitanceT Cc = f ( V R ) f = 1MHz
Normalized diode capacitanceC (T A) / C (25C) = f ( T A ), f = 1MHz, V R = Parameter
Reverse currentI R = f ( T A ), V R = 28V
V R ( V )
C T ( p
F )
10 -1
10 -2
10 -3
10 -4
10 -510 0 10 1 10 2
V R ( V )
T Cc
( 1/C
)
1.06
1.04
1.02
1.00
0.98
0.96-30 -10 10 30 50 70 90 110
T A ( C )
C TA
/ C 25
10 3
10 2
10 1
10 0
-10 10 30 50 70 90 100
T A ( C )
I R ( p
A )
1V
2V
25V
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LESHAN RADIO COMPANY, LTD.
S63/3
BB 535
10 3
10 2
10 1
10 0
10 -110 0 10 1 10 2
Reverse currentI R = f ( V R ), T A = Parameter
V R ( V )
I R ( p
A )
85C
25C