robert w. boyd or “everything photonic”
TRANSCRIPT
“Everything Photonic”
or
Slow Light, Enhanced Optical Nonlinearities, andPhotonic Biosensors based on Quantum Coherence
and on Artificial Optical Materials
Robert W. BoydThe Institute of Optics and
Department of Physics and AstronomyUniversity of Rochester, Rochester, NY 14627
http://www.optics.rochester.edu
Presented at the 33rd Winter Colloquium on the Physics of QuantumElectronics, Snowbird Utah, January 9, 2003.
Prospectus
Introduction to Slow Light and to Nonlinear Optics
Slow Light in Ruby
Slow Light in Artificial Materials
Slow-Light and Enhanced Optical Nonlinearities
Devices Based on Slow Light Concepts
Photonic Biosensors
NONLINEAROPTICS
SECOND EDITION
Robert W. Boyd
NO
NL
INE
AR
OPT
ICS
SECONDEDITION
Boyd
ISBN 0-12-121682-9ACADEMIC
PRESS
Boyd_final_layout 11/19/02 12:21 PM Page 1
Interest in Slow Light
Fundamentals of optical physics
Intrigue: Can (group) refractive index really be 106?
Optical delay lines, optical storage, optical memories
Implications for quantum information
Slow Light
group velocity ≠≠≠≠ phase velocity
Challenge/Goal
Slow light in room-temperature solid-state material.
• Slow light in room temperature ruby
(facilitated by a novel quantum coherence effect)
• Slow light in a structured waveguide
Slow Light in RubyNeed a large dn/dω. (How?)
Kramers-Kronig relations: Want a very narrow absorption line.
Well-known (to the few people how know itwell) how to do so:
Make use of “spectral holes” due topopulation oscillations.
Hole-burning in a homogeneouslybroadened line; requires T2 << T1.
1/T2 1/T1
inhomogeneously broadened medium
homogeneously broadened medium(or inhomogeneously broadened)
Γba
=1
T1
2γba
=2
T2
a
b b
a
cω
Γca
Γbc
atomicmedium
ω
ω + δω + δ
E1,
E3,
measure absorption
Spectral Holes Due to Population Oscillations
ρ ρbb aa w−( ) = δ δ δ δi t i tw t w w e w e≈ + +− −( ) ( ) ( ) ( )0
Population inversion:
δ T≤ / 11population oscillation terms important only for
ρ ω δ µω ω
δba
ba
ba i TE w E w+ =
− ++[ ]( )
/( ) ( )
23
01
1
Probe-beam response:
α ω δδ β
β
wT
T+ ∝ −
+
=
( )
( /
( )02
2
12 2
1
1
Ω
TT T T12
1 21) ( )+ Ω
Probe-beam absorption:
linewidth
h
Argon Ion LaserRuby
f = 40 cm
Function Generator
EO modulator
Digital
Oscilloscope
f = 7.5 cm
Diffuser
Reference Detector
Experimental Setup Used to Observe Slow Light in Ruby
7.25 cm ruby laser rod (pink ruby)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4D
elay
(m
s)
2000 400 600 800 1000Modulation Frequency (Hz)
P = 0.25 W
P = 0.1 W
Measurement of Delay Time for Harmonic Modulation
solid lines are theoretical predictions
For 1.2 ms delay, v = 60 m/s and ng = 5 x 106
512 µs
Time (ms)
0
0.2
0.4
0.6
0.8
1.0
1.2
No
rma
lize
d I
nte
nsity
Input Pulse
Output Pulse
0 10 20-10-20 30
Gaussian Pulse Propagation Through Ruby
No pulse distortion!
v = 140 m/s
ng = 2 x 106
Artificial Materials for Nonlinear OpticsArtifical materials can produce Large nonlinear optical response Large dispersive effects
ExamplesFiber/waveguide Bragg gratingsPBG materialsCROW devices (Yariv et al.)SCISSOR devices
MotivationTo exploit the ability of microresonators to enhancenonlinearities and induce strong dispersive effects for creatingstructured waveguides with exotic properties.
A cascade of resonators side-coupled to an ordinarywaveguide can exhibit:
slow light propagationinduced dispersionenhanced nonlinearities
Ultrafast All-Optical Switch Based On Arsenic Triselenide Chalcogenide Glass
We excite a whispering gallery mode of a chalcogenide glass disk.
The nonlinear phase shift scales as the square of the finesse F of the resonator. (F ≈ 10 2 in our design)
Goal is 1 pJ switching energy at 1 Tb/sec.
r5050
RingResonator
Input-2
Output-1
J. E. Heebner and R. W. Boyd, Opt. Lett. 24, 847, 1999. (implementation with Dick Slusher, Lucent)
Input-1
Output-2
Pulses spread when only dispersion is present
050
100150
0 20 40 60 80 100 120 t (ps)z (resonator #)
inte
nsity
050
100150
0 20 40 60 80 100 120 t (ps)z (resonator #)
inte
nsity
But form solitons through balance of dispersion and nonlinearity.
Displays slow-light, tailored dispersion, and optical solitons.
NLO of SCISSOR Devices(Side-Coupled Integrated Spaced Sequence of Resonators)
Description by NL Schrodinger eqn. in continuum limit.
(J.E. Heebner, Q-Han Park and RWB)
Fn
Slow Light and SCISSOR Structures
frequency, ω
FnR
c c
FnR
cnR
grou
p in
dex
buil
d-u
pk
eff −k
0
Fncslope =
F
n
2π
F2π n
0
FnR
c
2πL
FnR
c
cslope =
E3
E4
E1
E2 L
R
What is the relation between slow light andenhanced optical nonlinearity?
Comment: We know that there is a connection from the work of Hau,Harris, Lukin, Soljacic, Scully, Imamoglu, Bennink and many others.
Note: For n(phase) ª 1, there is no enhancement of the electric fieldwithin the material. Thus the enhancement must be of c(3), not of E.
Possible explanation: In a slow light situation, the light spends more timeinteracting with the medium. Can this be the explanation for enhancednonlinearity? (Ans: Yes and no.)
If this were the whole story, we would expect c(3), to scale in proportionto the group index n(group), which it does in some but not all situations.
What is the relation between slow light andenhanced optical nonlinearity?
The scaling laws seem to be very different for EIT media than forstructured artificial materials (PBG, CROWs, SCISSORSs, etc), becausein the latter case the E field is enhanced.
To first approximation:
For EIT: c(3) scales as n(group)For artificial materials: c(3) scales as the square of n(group)
Detailed analyses of the relation between slowlight and enhanced optical nonlinearity
• Heebner and Boyd show that the nonlinear phase shift scales as thesquare of the finesse of a ring resonator. Since n(group) scales as thefinesse, it follows that scales as the square of n(group).
• Lukin points out that the nonlinear phase shiftcan be expressed as f dwNL = T , whereT L c ng= / ( / ) is the interaction time and where
dw m= 2 2 2E / (h/2p) Dis the Stark shift of the optical transition. Thismodel predicts that scales as n(group). a
w1 w2
c
b
fNL
fNL
Unwanted Complication in Two-Level-Atom EIT
wc-2 -1 0 1 2
-0.5
0
0.5
Re c (1)
Im c(1)
-2 -1 0 1 2-2
-1
0
1
Ds
Re c (3)
Im c (3)
-5 0 5-0.1
0
0.1
-5 0 5-0.04
0
0.04
-10 0 10
-0.1
0
0.1
0.2
-0.05
0
Ds
Re c (1)
Re c (1)
Im c(1)
Im c(1)
DsDs
DsDs
Im c (3)Re c (3)
-10 0 10
0.05 Re c (3)
Im c (3)
-2 0 2-2
0
2
b1 -10
0
10b2
Ds
-5 0 5-0.1
0
0.1
-0.5
0
0.5b2
b1
-20 0 20-0.2
0
0.2
-0.2
0
0.2
Ds
Ds
b2b1
Response in absence of control field (Wc = 0, g = 0.5)
Response with a moderate, centrally tuned control field (Wc = 2, Dc= 0, g = 0.5)
Response with a stronger, detuned control field (Wc = 9, Dc= 3, g = 0.5)
Im c is proportional to ng, but Re c(3) is not.
(3)
Bennink et al., Phys.Rev. A, 2001.
What is the relation between slow light andenhanced optical nonlinearity?
Summary: This remains a somewhat open question.
Nanofabrication
• Materials (artificial materials)
• Devices
(distinction?)
Disk Resonator and Optical Waveguide in PMMA Resist
AFM
Photonic Devices in GaAs/AlGaAs
time (ps)po
wer
(m
W)
00
6
0
6
50 100
0
6
Input(duty factor = 1/3)
0
6
Output --delayed one time slot by six resonators in linear limit
Output --delayed four time slots by 26 resonators in linear limit
pow
er (
mW
)po
wer
(m
W)
pow
er (
mW
)
Output --delayed four time slots by 26 resonators in nonlinear limit
Performance of SCISSOR as Optical Delay Line
"Fast" (Superluminal) Light in SCISSOR Structures
pow
er (
arb.
uni
ts) 1.0
overcoupledcoupledcritically
undercoupled
overcoupled
0.5
0
k eff
-k 0
frequency detuning, w-wR
2pL
400delay (ps)
propagationthroughvacuum
(time-advanced)propagation
throughundercoupled
SCISSOR
-40-80-120
0 8 dw- 8 dw
Requires loss in resonator structure
Frequency Dependence of GVD and SPM Coefficients
-4p 0
-0.5
0.0
0.5
1.0
F -2pF
4pF
2pF
normalized detuning, f0
geffk''eff
(2FT/p)2/L g (2F/p)2 (2pR/L)
p3F
soliton condition
(GVD) (SPM)
Fundamental Soliton
Weak Pulsepulse
disperses
pulsepreserved
Soliton Propagation
050
100150
200250
0 20 40 60 80 100
050
100150
200250
0 20 40 60 80 100
0
0.1
0.2
0.3
t (ps)
z (resonator #)
pow
er (
µW)
0
0.1
0.2
0.3
t (ps)
z (resonator #)
pow
er (
W)
simulation assumes a chalcogenide/GaAs-
like nonlinearity
5 µm diameter resonators with a
finesse of 30
SCISSOR may be constructed from 100 resonators spaced by
10 µm for a total length of 1 mm
soliton may be excited via a 10 ps, 125mW
pulse
Dark Solitons
0100300
20
60
100
0
20
t (ps)z (resonator #)
po
wer
(m
W)
SCISSOR system also supports the propagation of dark solitons.
0 2 4 6 8 100
0.5
1.0
1.5
2.0
input power (watts)
input output
outp
utpo
wer
(wat
ts)
Optical Power Limiting in a Nonlinear Mach-Zenhder Interferometer
Objective:Obtain highsensitivity, highspecificity detectionof pathogens throughoptical resonance
Approach:Utilize high-finessewhispering-gallery-mode disk resonator.
Presence of pathogenon surface leads todramatic decrease infinesse.
Simulation of device operation:
Intensity distribution in absense of absorber.
Intensity distribution in presence of absorber.
Alliance for Nanomedical Technologies
Photonic Devices for Biosensing
FDTD
GaAs or AlGaAsGaAs or AlGaAsSiO2
Deposition of Surface Binding Layer
GaAs or AlGaAsSiO2
GaAs or AlGaAsSiO2
~1.2 nm
~300 nm
~12 nm
~1-5microns
GaAs or AlGaAsSiO2
1) Bare device surface
targetpathogen
2) SiO2 layer deposited by PECVD
3) Silane coupling agent deposited on surface
(C6H16O3SSi)
3-MercaptopropylTrimethoxysilane (MPT)
4) Antibodies washed over surface / adhere to MPT
5) Pathogen captured by antibody layer
streptavidin over biotin on GaAs
streptavidin over biotin on silica-coated GaAs
biotin on silica-coated GaAs
Notes: 1. false-color images of fluorescent intensity are shown 2. streptavidin is tagged with the dye Cy3
Demonstration of Selective Binding onto GaAs
University of Rochester/Corning Collaboration
biotin on GaAs
biotin on microscope slide
streptavidin over biotin on microscope slide
Summary
Artificial materials hold great promise for applications in photonics because of
• large controllable nonlinear response
• large dispersion controllable in magnitude and sign
Demonstration of slow light propagation in ruby
Thank you for your attention.
L 2L2L
SCISSOR Dispersion Relations
20 0
1.498
1.522
1.546
1.571
1.597p p- p
Bloch vector (keff)intensity build-up
Single-Guide SCISSOR
wav
elen
gth
(mm
)
Bragg gap
resonator gap
Bragg + resonator gap
No bandgap
Lp
Large intensity buildup
-
Double-Guide SCISSORBandgaps occur Reduced intensity buildup
L 2L2L20 0 p p- p0
Bloch vector (keff)intensity build-up
Lp-
separation = 1.5 p R
Alliance for Nanomedical Technologies
Optical Logic On A ChipOptical Logic On A Chip
A(1)
A(2)
Out(1)
Out(2)
In
Pathogen Out(1) Out(2)
none 1 0P(1) 1 1P(2) 1 1P(1) and P(2) 0 0
Is This a Good Idea?
Vollmer et al., Appl. Phys. Lett. 80, 4057 (2002).
Protein detection by optical shift of a resonant microcavity
The Promise ofNonlinear Optics
Nonlinear optical techniques hold great
promise for applications including:
• Photonic Devices
• Quantum Imaging
• Quantum Computing/Communications
• Optical Switching
• Optical Power Limiters
• All-Optical Image Processing
But the lack of high-quality photonicmaterials is often the chief limitation inimplementing these ideas.
Approaches to the Development ofImproved NLO Materials
• New chemical compounds
• Quantum coherence (EIT, etc.)
• Composite Materials:(a) Microstructured Materials, e.g.
Photonic Bandgap Materials,Quasi-Phasematched Materials, etc
(b) Nanocomposite Materials
These approaches are not incompatible and in fact can beexploited synergistically!
Nanocomposite Materials for Nonlinear Optics
• Maxwell Garnett • Bruggeman (interdispersed)
• Fractal Structure • Layered
λ
2a
b
εi
εh
εaεb
εa
εb
scale size of inhomogeneity << optical wavelength
Gold-Doped Glass
A Maxwell-Garnett Composite
gold volume fraction approximately 10-6
gold particles approximately 10 nm diameter
• Composite materials can possess propertiesvery different from their constituents.
• Red color is because the material absorbsvery strongly at the surface plasmonfrequency (in the blue) -- a consequence oflocal field effects.
Demonstration of Enhanced NLO Response
• Alternating layers of TiO2 and the conjugated polymer PBZT.
• Measure NL phase shift as a function of angle of incidence
Fischer, Boyd, Gehr, Jenekhe, Osaheni, Sipe, and Weller-Brophy, Phys. Rev. Lett. 74, 1871, 1995.Gehr, Fischer, Boyd, and Sipe, Phys. Rev. A 53, 2792 1996.
— =^
DE
0( )e is continuous.
implies that
Thus field is concentrated in lower index material.
.
Enhanced EO Response of LayeredComposite Materials
Diode Laser(1.37 um)
Polarizer
Photodiode Detector
Gold Electrode
ITO
BaTiO3
Ω =1kHz
Lockin Amplifier
Signal Generator
dc Voltmeter
Glass Substrate
AF-30/Polycarbonate
χ ω ωε ωε ω
ε ωε ω
εε
εε
χ ω ωijkleff
aeff
a
eff
a
eff
a
eff
aijklaf( ) ( )( ; , , )
( )
( )
( )
( )
( )
( )
( )
( )( ; , , )′ =
′′
′Ω Ω
ΩΩ
ΩΩ
Ω Ω1 21
1
2
21 2
• AF-30 (10%) in polycarbonate (spin coated)n=1.58 ε(dc) = 2.9
• barium titante (rf sputtered)n=1.98 ε(dc) = 15
χ
χzzzz
zzzz
i m V( )
( )
( . . ) ( / ) %
. ( )
3 21 2
3
3 2 0 2 10 25
3 2
= + × ±
≈
−
AF-30 / polycarbonate
3.2 times enhancement in agreement with theory
R. L. Nelson, R. W. Boyd, Appl. Phys. Lett. 74, 2417, 1999.
E
z
SiO2 Cu
L0
E
z
Cu
R.S. Bennink, Y.K. Yoon, R.W. Boyd, and J. E. Sipe Opt. Lett. 24, 1416, 1999.
• Metals have very large optical nonlinearities but low transmission.
• Solution: construct metal-dielectric PBG structure. (linear properties studied earlier by Bloemer and Scalora)
pure metal80 nm of copperT= 0.3%
PBG structure80 nm of Cu (total)T= 10%
• Low transmission is because metals are highly reflecting (not because they are absorbing!).
Accessing the Optical Nonlinearity of Metals with Metal-Dielectric PBG Structures
40 times enhancment of NLO response is predicted!
Z-Scan Comparison of M/D PBG and Bulk Sample
35 @¢¢
¢¢
Cu
PBG
fdfd
0.50
0.75
1.00
0 50 100 150 200 250
z,mm
Tnorm
Cu
PBG
l = 640 nm
I = 500 MW/cm2Open-aperture Z-scan
(measures Im c(3))
Spectral Dependence of the Nonlinear Response
0
0.5
1.0
1.5
2.0
500 550 600 650 700
PBG
Bulk
wavelength, nm
Im f
NL
OPG:
Q = 2 to 5 mJ
I @ 100 MW/cm2
t = 25 ps
Nonlinear Schrödinger Equation (NLSE)
Fundamental Soliton Solution
Propagation Equation for a SCISSOR
L
∂∂z A = −i 12 β2 ∂2
∂t2A + iγ |A|2A
A(z,t) = A0 sech tTp
ei12
γ|A0 |2z
By arranging a spaced sequence of resonators, side-coupled to an ordinary waveguide, one can create an effective, structured waveguide that supports pulse propagation in the NLSE regime.
Propagation is unidirectional, and there is NO photonic bandgap to produce the enhancement. Feedback is intra-resonator and not inter-resonator.
ω R
γ eff
β2
Balancing Dispersion & Nonlinearity
A0 = |β2 |
γ Tp2= T2
3 γ2πRTp2
Resonator-induced dispersion can be 5-7 orders of magnitude greater than the material dispersion of silica!
Resonator enhancement of nonlinearity can be 3-4 orders of magnitude!
An enhanced nonlinearity may be balanced by an induced anomalous dispersion at some detuning from resonance to form solitons
A characteristic length, the soliton period may as small as the distance between resonator units!
soliton amplitude
adjustable by controlling ratio of transit time to pulse width
GaAs
AlxGa1-xAs(x = 0.4)
Microdisk Resonator Design
(Not drawn to scale)All dimensions in microns
0.5
2.0
10 10
0.450.25
s1 = 0.08s2 = 0.10s3 = 0.12s4 = 0.20
25
2.0
trench
gap
lineartaper
20
trench
d = 10.5
25lineartaper
J. E. Heebner and R. W. Boyd
Pulse Distortion on Propagation through SCISSOR Structure
strong pulse, at GVD extremum
weak pulse, on resonance
pow
er (
mW)
weak pulse, at GVD extremum
6
4
2
0
0 1 2 3 4time (ns)
8
input output
input
input
output
output (soliton)
pow
er (
mW)
6
4
2
0
8
pow
er (
mW)
6
4
2
0
Maximum delay, but pulse distorted by higher-orderdispersion.
Slightly reduced delay, no distortion, but spreading due to GVD.
Slightly reduced delay, no distortion, SPM com-pensates for spreading
Photonic Device Fabrication Procedure
RWB - 10/4/01
PMMA
AlGaAs-GaAs
structure
Oxide (SiO2)
AlGaAs-GaAs
structure
Oxide (SiO2)
PMMA
AlGaAs-GaAs
structure
PMMA
Oxide (SiO2)
(2) Deposit oxide
AlGaAs-GaAs
structure
(1) MBE growth
(3) Spin-coat e-beam resist
(4) Pattern inverse with
e-beam & develop(6) Remove PMMA
(7) CAIBE etch AlGaAs-GaAs
(8) Strip oxide
AlGaAs-GaAs
structure
Oxide (SiO2)
AlGaAs-GaAs
structure
AlGaAs-GaAs
structure
Oxide (SiO2)
(5) RIE etch oxide
AlGaAs-GaAs
structure
Oxide (SiO2)
Intensity Enhancement ( |E3 / E1|2 )
Modified Dispersion Relation ( β vs. ω )
Properties of a Single Microresonator
frequency (ω)
effe
ctiv
e pr
opag
atio
nco
nsta
nt (
β)B
uild
-up
Fac
tor
|E3
/ E
1|2
ωR
r2 = 0.90
r2 = 0.75
r2 = 0.25
r2 = 0.00
r2 = 0.00 r2 = 0.25
r2 = 0.75 r2 = 0.90
ωR − 2πT
ωR + 2πT
E
R
3E
4
E1
E2
Assuming negligible attenuation, this resonator is, unlike a Fabry-Perot, of the "all-pass" device -
there is no reflected or drop port.
Definitions
Finesse
Transit Time
E4E2
= r it
rit
E3E1
F = π1−r
T = n2πRc