rgpr30ns40hr : igbtrohmfs.rohm.com/.../discrete/igbt/rgpr30ns40hr-e.pdfrgpr30ns40hr 400v 30a...

www.rohm.com© 2017 ROHM Co., Ltd. All rights reserved.

DatasheetRGPR30NS40HR 400V 30A Ignition IGBT

Ignition Coil Driver Circuits

Solenoid Driver Circuits

Applications

6) Pb - free Lead Plating ; RoHS Compliant

Inner Circuit

Outline

BVCES 40030V LPDS (TO-263S) / TO-262

IC 30A

VCE(sat) (Typ.) 1.6V

EAS 300mJ

Features

5) Qualified to AEC-Q101

4) Built in Gate-Emitter Resistance

3) Built in Gate-Emitter Protection Diode

2) High Self-Clamped Inductive Switching Energy

1) Low Collector - Emitter Saturation Voltage

Packaging Specifications

Type

Packaging Taping / Tube

Reel Size (mm) 330 / -

Tape Width (mm) 24 / -

Basic Ordering Unit (pcs) 1,000 / 1,000

Packing Code TL / C9

Marking RGPR30NS40

Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)

Parameter Symbol Value Unit

Collector - Emitter Voltage VCES 430 V

Gate - Emitter Voltage VGES 10 V

Emitter-Collector Voltage (VGE = 0V) VEC 25 V

IC 30 ACollector Current

Avalanche Energy (Single Pulse)Tj = 25°C EAS 300 mJ

Tj = 150°C EAS*2 180 mJ

Storage Temperature Tstg 55 to +175 °C

PD 125 WPower Dissipation

Operating Junction Temperature Tj 40 to +175 °C

(1)

(2)

(3)

(1) Gate(2) Collector(3) Emitter(1)

(2)

(3)

(1)(2)(3)

1/9 2017.08 - Rev.B


DatasheetRGPR30NS40HR

Thermal Resistance

Electrical Characteristics (at Tj = 25°C unless otherwise specified)

UnitMin. Typ. Max.

V

Parameter SymbolValues

UnitMin. Typ. Max.

370 400 430 V

365 - 435

Parameter Symbol ConditionsValues

Collector Cut - off Current ICES

Collector - Emitter BreakdownVoltage

BVCES

Emitter - Collector BreakdownVoltage

BVEC IC = 10mA, VGE = 0V 25 35 -

IC = 2mA, VGE = 0V

Tj = 25°C

Tj = 40 to 175°C*2

1.50

Tj = 150°C - 1.19 -

VCE = 5V, IC = 12mA

Tj = 25°C

Tj = 150°C*2

Collector - Emitter SaturationVoltage

VCE(sat)

IC = 5A, VGE = 4.5V

Gate - Emitter ThresholdVoltage

VGE(th) 1.3 1.7

Tj = 25°C - 1.17

V

Gate - Emitter BreakdownVoltage

BVGES IG = 5mA, VCE = 0V 12 - 17

Tj = 25°C

Tj = 150°C*2

V

VCE = 250V, VGE = 0V

- - 7 μA

mA1.2


VCE(sat)

IC = 12A, VGE = 5V

Tj = 25°C - 1.60

Tj = 150°C - 1.80

2.00

-

Gate - Emitter Leakage Current IGES VGE = 10V, VCE = 0V 0.4 0.6

V

Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 1.20 °C/W

V

V

V

2.1 V

- 1.3 - V

- - 100 μA

2/9 2017.08 - Rev.B



Electrical Characteristics (at Tj = 25°C unless otherwise specified)

*1) Assurance items according to our measurement definition (Fig.18)

*2) Design assurance items

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

Tj = 25°C - 1.70 2.10

IC = 12A, VGE = 4V

V

μs

pFOutput Capacitance Coes VGE = 0V - 220 -

Reverse Transfer Capacitance Cres f = 1MHz - 71 -

Input Capacitance Cies VCE = 10V - 1330 -

Turn - off Delay Time*1,*2 td(off) 0.9 1.4 4.0

0.11 0.19 0.50

Rise Time*1,*2 tr 0.10 0.18 0.50IC = 8A, VCC = 300V,VGE = 5V, RG = 100Ω,L=5mH, Tj=25°C

Turn - on Delay Time*1,*2 td(on)

Fall Time*1,*2 tf 0.8 1.8 5.5

μsRise Time*1 tr - 0.21 -

Turn - off Delay Time*1

- 0.18 -Turn - on Delay Time*1 td(on)

130

Tj = 150°C*2

- 1.7 -

Fall Time*1 tf - 3.0 -

td(off)

IC = 8A, VCC = 300V,VGE = 5V, RG = 100Ω,L=5mH, Tj=150°C

Avalanche Energy (Single Pulse) EAS

L = 5mH, VGE = 5V,VCC = 30V, RG = 1kΩ,

V

Total Gate Charge QgVCE = 12V, IC = 10A,VGE = 5V

- 22 - nC

- 1.90 -


VCE(sat)

Tj = 150°C

Ω

Gate - Emitter Resistance RGE 8 16 24 kΩ

300 - - mJ

180 - - mJ

Tj = 25°C

Gate Series Resistance RG 70 100

3/9 2017.08 - Rev.B



Electrical Characteristic Curves

Fig.1 Typical Output Characteristics

Col

lect

or C

urre

nt :

I C[A

]

Collector To Emitter Voltage : VCE[V]


Col

lect

or C

urre

nt :

I C[A

]


Fig.4 Typical Collector To Emitter Saturation Voltagevs. Junction Temperature

Col

lect

or T

o E

mitt

er S

atur

atio

n V

olta

ge: V

CE

(sat

)[V

]

Junction Temperature : Tj [ºC]


Col

lect

or C

urre

nt :

I C[A

]


0

5

10

15

20

25

30

0 1 2 3 4 5

Tj= 25ºCTj= 25ºC

VGE= 10V

VGE= 8V

VGE= 4.5V

VGE= 4V

VGE= 3.5V

VGE= 5V

0

5

10

15

20

25

30

0 1 2 3 4 5

Tj= 175ºCVGE= 10V

VGE= 8V

VGE= 4.5V

VGE= 4V

VGE= 3.5V

VGE= 5V

1

1.1

1.2

1.3

1.4

-50 0 50 100 150 200

IC= 5A

VGE= 3.5V4V4.5V

8V10V

5V

0

5

10

15

20

25

30

0 1 2 3 4 5

Tj= 40ºC

VGE= 10V

VGE= 8V

VGE= 4.5V

VGE= 4V

VGE= 3.5V

VGE= 5V

4/9 2017.08 - Rev.B




　

Fig.5 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature

Col

lect

or T

o E

mitt

er S

atur

atio

n V

olta

ge: V

CE

(sat

)[V

]


Col

lect

or T

o E

mitt

er S

atur

atio

n V

olta

ge: V

CE

(sat

)[V

]


Fig.7 Typical Transfer Characteristics

Col

lect

or C

urre

nt :

I C[A

]

Gate to Emitter Voltage : VGE [V]

Fig.8 Typical Gate To Emitter Threshold Voltagevs. Junction Temperature

Gat

e T

o E

mitt

er T

hres

hold

Vol

tage

: VG

E (

th)

[V]


0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

-50 0 50 100 150 200

VGE= 5VIC= 20A

10A

8A5A

4.5A1A

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2

-50 0 50 100 150 200

IC= 10AVGE= 3.5V

4V

4.5V

8V 10V5V

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

-50 0 50 100 150 200

VCE= 5VIC= 10mA

0

5

10

15

20

25

30

0 1 2 3 4 5

VCE= 5V

Tj= 175ºC

Tj= 25ºC

Tj= 40ºC

Fig.6 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature

5/9 2017.08 - Rev.B




Fig.9 Typical Leakage Current vs. Junction Temperature

Leak

age

Cur

rent

: I C

ES/I E

C[

A]


Fig.10 Typical Collector To Emitter Breakdown Voltage vs. Junction Temperature

Col

lect

or T

o E

mitt

er B

reak

dow

n V

olta

ge

: BV

CE

S[V

]


Fig.11 Typical Self Clamped Inductive Switching Current vs. Inductance

Sel

f C

lam

ped

Indu

ctiv

e S

witc

hing

Cur

rent

: IA

S[A

]

Inductance : L [mH]

Fig.12 Typical Gate Charge

Gat

e T

o E

mitt

er V

olta

ge :

VG

E[V

]

Gate Charge : Qg [nC]

0.01

0.1

1

10

100

1000

10000

-50 0 50 100 150 200

VCES= 300V

VCES= 250V

VEC= 25V

0

1

2

3

4

5

0 5 10 15 20 25

VCC= 12VIC= 10ATj= 25ºC

0

5

10

15

20

25

30

35

40

0 1 2 3 4 5 6 7 8 9 10

VCC= 30VVGE= 5VRG= 1kΩ

380

390

400

410

-50 0 50 100 150 200

VGE= 0V

ICES= 2mA

ICES= 1mA

6/9 2017.08 - Rev.B




Fig.13 Typical Capacitance vs. Collector To Emitter Voltage

Cap

acita

nce

[pF

]


Sw

itchi

ng T

ime

[μs]


Fig.14 Typical Switching Time vs. Junction Temperature

Fig.15 Forward Bias Safe Operating Area

Col

lect

or C

urre

nt :

I C[A

]


0.1

1

10

0 25 50 75 100 125 150 175 200

VCC= 300V, IC= 8A,VGE= 5V, L= 5mH tf

td(off)

tr

td(on)

1

10

100

1000

10000

0.01 0.1 1 10 100

f= 1MHzVGE= 0VTj= 25ºC

Cies

Coes

Cres

0.01

0.1

1

10

100

1000

1 10 100 1000

TC= 25ºCSingle Pulse

10µs

100µs

1ms

10ms

7/9 2017.08 - Rev.B




0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

D= 0.5 0.20.1

0.3

Single Pulse

0.05

0.01

0.02

Fig.16 Transient Thermal Impedance

Tra

nsie

nt T

herm

al Im

peda

nce

: Zth

JC[º

C/W

]

Pulse Width : t1[s]

t1

t2

PDM

Duty=t1/t2Peak Tj=PDM×ZthJCTC

C1 C2 C3 R1 R2 R3615.3u 3.003m 1.360m 231.2m 160.8m 408.0m

8/9 2017.08 - Rev.B



Inductive Load Switching Circuit and Waveform

Self Clamped Inductive Switching Circuit and Waveform

Fig.19 Self Clamped Inductive Switching Ciruit

VG

D.U.T.

Fig.20 Self Clamped Inductive Switching Waveform

EAS

VCE(sat)

IC

VCE

VCC

Vclamp

tr

toff

10%

90%

tf

td(on)

td(off)

Gate Drive Time

VCE(sat)

10%

90%

ton

VGE

IC

VCE

VG

D.U.T.

Fig.17 Inductive Load Switching Circuit

Fig.18 Inductive Load Switching Waveform

9/9 2017.08 - Rev.B

R1102Awww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

Notice

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N o t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.

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ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

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