RF Power Transistor Products GaN Update

May 2012

GaN Power Technology Solutions

Diverse Solutions for Multiple Applications • Pre-Matched Power Transistors

– Radar & Avionics • Unmatched Wideband Devices

– Milcom, EW & Wideband Apps. • Smart Pallet and Multi-Chip Modules

– Radar, Satcom & Commercial Apps. • Large Signal Load Pull Models for Design Optimization

M/A-COM Tech GaN Advantage • GaN on SiC Substrate with Excellent Thermal Performance

– MTTF > 600 yrs @ 200C Channel Temp • 0.5 micron depletion mode HEMT process • High breakdown voltage of 175V

– Very Rugged Performance – High Power & Efficiency

• Class AB bias

• Commercial classification for many parts

Plastic QFN GaN Power Devices Highest Performance for Lowest Cost!

Flange Power Transistors & GaN Power Smart Pallet

MAGX-000025-120000 Transistor

0 20 40 60 80

100 120 140 160 180

0 1 2 3 4 5 6

Pout

(W)

Pin (W)

CW Pout vs Pin 2.5 GHz (50V)

0

10

20

30

40

30 100 500 1500 2500

Gai

n (

dB

)

Frequency (MHz)

Small Signal Gain vs Frequency (single point optmized)

Applications: General purpose for pulsed or CW applications • Commercial Wireless Infrastructure • WCDMA, LTE, WIMAX • Civilian and Military Radar • Military and Commercial Communications • Public Radio • Industrial, Scientific and Medical • SATCOM • Instrumentation • Avionics

MAGX-001214-425L00 L-Band Transistor

Features • L-Band Pulsed Radar • Pout > 425W • Gain = 20dB • Efficiency = 60%

MAGX-002735-120L00 S-Band Transistor

Features • S-Band Radar • Pout > 120W • Gain = 12dB • Efficiency = 50% • 800MHz Bandwidth

MAPG-002729-600L0S S-Band Radar Smart Pallet

Features • S-Band Radar Smart Pallet • Single +50V supply • Integrated Bias & Sequencing • Pulse Blanking Option • Programmable Bias • Pout > 600W • Gain = 14dB

Plastic DFN packaged GaN for Wideband applications

July 6, 2012

8

5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 105.0

2 3 4 5 6 7 8 9

10 11 12 13 14 15 16 17 18 19 20 21 22

20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Po

wer

Out

put (

dBm

)

Pow

er G

ain

(dB

)

Power Input (dBm)

Power Out (W) & Gain (dB) vs Power Input (dBm) - 1100MHz to 1500MHz (3mS/10%)

Gp (dB)_1100

Gp (dB)_1200

Gp (dB)_1300

Gp (dB)_1400

Gp (dB)_1500

Pout (W) 1100

Pout (W) 1200

Pout (W) 1300

Pout (W) 1400

Pout (W) 1500

Demonstrated >100W of Power in Pulsed applications in single 3X6mm DFN. All lumped matching used

Features • Low Cost Plastic DFN • Unmatched for multi octave applications • DC – 3.5GHz Operation • Pout = 90W Peak • Gain = 14 – 30 dB

Qualification

– Phase 1 • Phase 1 qualification successfully

completed

• Tested in accordance with MIL-

PRF-19500 Grps A, B, and C

• MIL-PRF-19500 Grps A, B, and C

are a combination of electrical and

environmental tests. No failures

during test.

– Phase 2 • 5 temperature DC step-stress test

• 3 temperature RF life test

• Arrhenius plot of life test data

generated (MTTF vs. device temp)

>600 years (5M hours) @ 200C >114 years (1M hours) @ 220C

Qualification

High Temperature RF Test Fixture

30W CW Transistor Used for Reliability Test

Available in Microwave Journal Online white papers Sponsored by Richard RFPD

GaN Summary

The M/A-COM Tech GaN Product Portfolio continues to grow

• Increasing number general purpose transistors • Higher power L and S-Band transistors • Smart pallet products • Lower cost DFN transistors