rf and microwave engineering two marks questions and answers
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microwave interview questionsTRANSCRIPT
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 1
EC2403- RF AND MICROWAVE ENGINEERING
TWOMARKS QUESTIONS AND ANSWERS
UNIT I TWOPORT RF NETWORKS-CIRCUIT REPRESENTATION
1. What is insertion loss?
Insertion loss is a measure of the loss of the energy in transmission through a line or
device compared to direct delivery of energy without the line or device.
2. Why are S parameters used in microwaves?
The S parameters are used in microwaves because of the following characteristics
Increased stability at higher frequencies
Mismatch loss is less
Attenuation loss is less.
3. Specify the x- and frequency range and wavelength ( N/ D 2007)
The X- band frequency range : 8 – 12.5 GHz
The X-band wavelength : 3.7 – 2.4 cm
1. Specify the k-band frequency range and wavelength ( M / J 07)
The k-band frequency range : 18 – 26.5 GHz
The k-band wavelength 1.67- 1.13 cm
3. What is meant by symmetry of scattering matrix? ( a/ M 08)
Matrix of S is a symmetric matrix when the microwave device has the same
transmission characteristics in either direction of a pairs of ports.
Sij= Sji
4.Define – Scattering matrix
Scattering matrix is a square matrix which gives all the combinations of the power
relationships between the various input and output ports of a microwave junction.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 2
5. Why are s parameters used in microwaves?
The S- parameters are used in microwave because of the following characteristics
Increased stability at higher frequencies
Mismatch loss is less
Attenuation loss is less
6. State the properties of S parameter. ( N / D 12)
The properties of S parameter are
It is always a square matrix of order ( n * n)
It is a unitary matrix
It is a symmetric matrix
Under perfect matched conditions, the diagonal elements of S parameter are
zero.
7.Define- Lossless Network
In lossless passive network, the power entering the circuit is always equal to power
leaving network which leads to the conservation of power.
8. Define- Straight Wire Inductance
When alternating current is applied in a wire medium, the magnetic field is alternatively
expanding and contracting. This produces an induced voltage in the wire that opposes any
change in the current flow. This opposition to change is called ‘ Straight Wire Inductance’.
9. Define – skin effect
As frequency increases, the electrical signals propagate loss inside the conductor.
Because of the current density increases to the perimeter of the wire and causes higher
impedance for the signal. This effect is known as skin effect.
10. State the different types of high frequency capacitors.
The different types of high frequency capacitors are
Parallel plate capacitor
Leaded capacitor
Perfect capacitor
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 3
11. State the different types of high frequency resistors.
The different types of high frequency resistors are
Carbon composite resistors
Metal film resistors
Thin film resistors
12. Define – Q factor
It is the measure of ability of an element to store energy and is equal to 2π times the
average energy stored to that of the energy dissipated per cycle.
13. Define – Two Port Network
A two port network has only two access ports, one for input or excitation and one for output
or response.
14. What are scattering coefficients?
The elements of scattering matrix are called scattering coefficients or scattering parameters.
15. Which one is called junction?
The point of interconnection of two or more devices is called a junction.
16. Define- Reflection Loss
The reflection loss is a measure of power loss during transmission due to the reflection of the
signal as a result of impedance mismatch.
17. What is the Zero property of S matrix?
It states that, “ for a passive lossless N- port network, the sum of the products of each term of
any row or any column multiplied by the complex conjugate of the corresponding terms of any
row or column is zero.
18. Define - Return Loss
The return loss is a measure of the power reflected by a line or network through a line.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 4
19. What is wire?
A wire is the simplest element having zero resistance, which makes it appear as a short
circuit at DC and low AC frequencies.
20. What is a wave guide?
A waveguide is a hollow metal tube designed to carry microwave energy from one place to
another.
21. List the applications of waveguide twist.
Waveguide twists are used to change the plane of polarization of a propagating wave.
Waveguide twists are helpful in converting vertical to horizontal polarizations or vice
versa.
22. What are the basic types of directional couplers?
Two hole directional coupler
Four hole directional coupler
Reverse coupling directional coupler
Bethe hole directional coupler.
UNIT –II RF amplifier Design & Matching Networks
1.Define – Unilateral Power Gain
When feedback effect of the amplifer is neglected ( i.e S12 = 0), the amplifier
power gain is known as unilateral power gain.
2.What is the function of input and output matching networks?
Input and output matching networks are needed to reduce undesired reflections and
improve the power flow capabilities.
3. Define - Unconditional Stability
Unconditional stability refers to the situation where amplifier remains stable for any
passive source and load at the selected frequencies and bias conditions.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 5
4. Define- Available power gain
Available power gain is defined as the power available from the microwave
network to that of the poer from the source.
5. What is meant by power gain of an amplifier? ( N / D 12)
Transducer power gain is defined as the ratio of power delivered to the load to
that of the power from the source.
6. Define – Noise Figure
Noise figure F is defined as the ratio of the input SNR to the output SNR
7. Name the types of magnetron.
There are three types of magnetron. They are
Split anode magnetron
Cyclotron- frequency magnetrons
Traveling wave magnetrons
8.What is the need for impedance matching networks? (N / D 11)
Matching networks can help stabilize the amplifier by keeping the source and load
impedances in the appropriate range. Input and output matching networks are needed to reduce
undesired reflections and improve the power flow capabilities.
9. Distinguish between O- type tubes and M-type tubes
O type tube M- type Tube
Accelerating electric field is in the same direction as the static magnetic field
Static magnetic field is perpendicular to the electric field.
Electron beam tranvels in straight line Electron beam travels in curved path
Klystron, TWT are some of the examples Magnetron is the example
10.Write the expression for noise figure of a two port amplifier ( N / D 11)
The generated noise of a two port network can be determined from the signal to noise
ratio ( SNR) from the input to the output.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 6
11.What are the considerations in selecting a matching network? ( N / D 12)
Factors in the selection of matching networks are
Complexity of the system
Bandwidth requirement
Adjustability
Implementation
Maximum power delivery or transfer
Optimal efficiency
12. Why impedance matching is required? What are the other constraints required?
( M / J 13)
Matching networks can help stabilize the amplifier by keeping the source and load
impedances in the appropriate range. Matching network is important for the following
reasons.
Maximum power loss is in the feed line
Maximum power delivery or transfer
Improving the S/N ratio of the system
13. Define Transducer Power Gain
Transducer power gain is nothing but the gain of the amplifier when placed between
source and load.
14. What are the parameters used to evaluate its performance of an amplifier? ( N / D 12)
Gain and gainflatness ( in dB)
Operating frequency and bandwidth ( in Hz)
Output power (in dB)
Power supply requirements ( in V and A)
Noise figure ( in dB)
15. Define – Operating Power Gain
The operating power gain is defined as the ratio of the power delivered to the load (Pl) to
the power supplied to the amplifier
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 7
16. State the various types of waveguide stub.
The various types of waveguide stub are
E – Stub
H- Stub
E-H tuner
17. Mention the purpose of resistors.
The purpose of resistors are as follows:
In transistor bias networks, to establish an operating point.
In attenuators, to control the flow of power
In signal combiners, to produce a higher output power
In transmission lines, to create matched conditions
18. What is an inductor?
A wire is wound (or coiled) in such a manner so as to increase the magnetic flux linkage
between the turns of the coil. The increased flux linkage increases the wire’s self inductance.
19. State the different types of high frequency resistors.
The different types of high frequency resistors are
Carbon composite resistors
Metal film resistors
Thin film resistors
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 8
UNIT III – MICROWAVE PASSIVE COMPONENTS
1. What is the need for waveguide twist?
Waveguide twists are used to change the plane of polarization of a propagating wave.
2. How a faraday rotation isolator can be constructed by using ferrite rod? ( N / D 08)
Isolators can be made by inserting ferrite rod along the axis of a rectangular waveguide.
3. Define - Coupling factor
Coupling factor is a measure of how much of the incident power is being sampled.
4. Define – Isolator
An isolator is a two port non-reciprocal device which produces a minimum attenuation in
the wave in one direction and very high attenuation in the opposite direction.
5. What is meant by hybrid junction?
A hybrid junction is a four- port network in which a signal incident on any one of the port
devices between two output parts with the remaining port being isolated.
6. What are the basic types of directional coupler? ( N / D 09)
The basic types of directional coupler are
Two- hole directional coupler
Four-hole directional coupler
Reverse coupling directional coupler
Bethe coupler.
7. Name some uses of waveguide tees.
It is used to connect a branch or section of the waveguide in series or parallel with the
main waveguide transmission line for providing means of splitting and also of combining
power in a waveguide system.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 9
8. List the applications of waveguide twist.
Waveguide twists are used to change the plane of polarization of a propagating wave.
Waveguide twists are helpful in converting vertical to horizontal polarizations or vice versa.
9. Why magic tee is referred as E-H tee?
Magic Tee is constructed by E-plane Tee and H plane Tee perpendicular to each other.
Therefore magic tee is referred to as E-H tee.
10. What is meant by directivity of directional coupler? ( A / M 08)
The directivity of directional coupler is defined as the ratio of forward power P r to the
back power Pb and expressed in dB.
11. What are the basic parameters to measure the performance of a directional coupler?
( N / D 2008)
The basic parameters to measure the performance of directional coupler are
Coupling coefficient
Directivity
Insertion loss
Isolation.
12. What is H- plane Tee?
An H- plane Tee is a waveguide Tee in which the axis of its side arm is parallel to the H-
field of the main arm.
13. Define a microwave junction
The point of interconnection of two or more microwave devices is called microwave
junction.
14. What is E-plane Tee?
An E- plane tee is a wave guide tee in which the axis of its side arm is parallel to the H-
field of the main arm.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 10
15. Why bends are used?
Bends are used to alter the direction of propagation in a waveguide system. The reflection
due to the bend is a function of its radius.
16. Define – Gradual twists
The gradual twists changes the plane of polarizations in a continuous order.
17. Define- Non Reciprocal Devices
Non reciprocal devices are defined as devices having different forward and reverse
propagating characteristics.
18. State the properties of ferrites.
Ferrites exhibits strong magnetic ability
Ferrites exhibits high resistivity compared with copper in microwave
Ferrites exhibits non- reciprocal property.
19. What is sum arm?
In a H- plane tee, if two input waves are fed into port1 and port2 of the collinear arm, the
output wave at port3 will be in phase and additive. Because of this, the third phase is called as
sum arm.
20. Write the applications of magic tee?
The applications of magic tee are
For the measurement of impedance
As a duplexer
As a mixer
As an isolator
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 11
21. Write the types of ferrite device.
Three types of non reciprocal ferrite devices which make use of faraday rotation in
microwave system are Gyrator, Isolator, circulator.
22. List the applications of cavity resonator.
Cavity resonators find applications as a wave meter
As an echo box for testing of a radar transmitter
As tuned circuits in UHF tubes
In microwave oscillators like reflex klystron and magnetrons.
23. Define – Difference Arm
In E- plane Tee, the power out of port3 is proportional to the difference between
instantaneous power entering from port1 and port 2. Therefore, this third port is called as
difference arm.
24. Write the applications of circulator.
A circulator can be used as a duplexer for a radar antenna system. Two or three port
circulators can be used in tunnel diode or parametric amplifiers.
25. What is a circulator?
A circulator is a multiport junction in which the wave can travel from one port to the next
immediate port in one direction only. They are useful in parametric amplifiers.,tunnel diode,
amplifiers and duplexer in radar.
26. Name some uses of isolators.
Isolators are generally used to improve the frequency stability of microwave generators
such as klystrons and magnetrons in which the reflection from the load affects the generating
frequency.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 12
27. What is a gyrator?
It is a two port device that has a relative phase difference of 180˚ for transmission from
port1 to port2 and no phase shift for transmission from port2 to port1.
28. Define – Faraday Rotation Isolator
Isolators can be made by inserting ferrite rod along the axis of a rectangular waveguide.
Here the isolator is called as faraday rotation isolator.
UNIT IV MICROWAVE SEMICONDUCTOR DEVICES
1. High reliability What are M- type tubes? ( A / M 08)
M- type tubes are crossed field devices where the static magnetic field is perpendicular to
the electric field. Here the electrons travel in the curved path.
2. State the advantages for microwave IC’s ( A / M 08)
The advantages for microwave IS’s are
Low package density
Small size and less weight
Different transmission structures are possible.
3. What is the other name of O- type tube? ( N /D 07)
The other name for O- type tube is linear tube or rectilinear beam tube.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 13
4.Differentiate tunnel diode from normal P-N diode
Tunnel diode PN diode
Doping levels at P and N sides are very high Doping levels at P and N sides are very normal
It exhibits negative resistance characteristics It exhibits positive resistance characteristics
Low noise Moderate noise
Preferred semi conductor – GaAs Preferred semiconductor – Ge and Si
5. What is HEMT ( N / D 11)
The field effect transistor (FET) which is made using a hetero-junction is called High
electron Mobility transistor(HEMT)
HEMT has higher frequency of operation
HEMT has low noise figure
6. What is MESFET? (( N / D 07)
When the FET is constructed with a metal- semiconductor Schottky- barrier diode, the
device is called a Metal Semiconductor Field Effect Transistor.
7. State the limitations of bipolar devices at high frequencies. ( N / D 09)
The limitations of bipolar devices at high frequencies are
Unstable beyond k band frequency
Higher noise level
Voltage gain is less compared to other transistors
8. State Gunn effect. ( A / M 08)
When the electric field is varied from zero to threshold value, the carrier drift velocity is
increased from zero to maximum, when the electric field is beyond the threshold value of 3000
V/ cm , the drift velocity is decreased and the diode exhibits negative resistance.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 14
9. State the transferred electron effect. ( N / D 12)
When GAAs is biased above a threshold value of the electric field, it exhibits a negative
differential mobility. The electrons in the lower energy band will be transferred into the higher
energy band. This behavior is called transferred electron effect.
10. What are the materials that exhibit Gunn effect?
The materials exhibiting Gunn effect are
Gallium Arsenide
Indium phosphide
Cadmium telluride
Indium arsenide.
11. What are the modes available in negative resistance devices?
The modes available in negative resistance devices are
Voltage controlled mode
Current controlled mode
12. What are the major disadvantages of IMPATT diodes? ( N / D 08)
The major disadvantages of IMPATT diodes are
Avalanche process makes the IMPATT diode noisy
Poor noise figure of 30 dB
Low efficiency due to induced electron current
13. State any two applications of parametric amplifier. ( M / J 07)
The applications of parametric amplifier are in
Space communication systems
Radio telescopes
Tropo- receivers.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 15
14. State the advantages of parametric amplifiers.( N / D 11)
The advantages of parametric amplifier are
Thermal noise in parametric amplifiers is less
Stability is high at higher frequencies
Noise figure is in the range of 1- 2 dB
15. State the different types of lithography. ( A / M 08)
The different types of lithography are
Electron- beam lithography
Ion- beam lithography
Optical lithography
X- ray Lithography
16. State the various MMIC fabrication techniques.
The various MMIC fabrication techniques are
Diffusion and ion implementation
Oxidation and film deposition
Epitaxial growth
Lithography
Etching and photo resist deposition
17. Define - Saturated Drift Velocity.
Maximum velocity of charge carriers in a semiconductor is called saturation drift
velocity.
18. Describe tunneling phenomenon.
When the doping level is increased, the depletion region reduces. Due to thin depletion
region, even for very small forward bias, many carriers penetrate through the junction and appear
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 16
at the other side. This phenomenon of penetration of carriers through the depletion region is
known as tunneling.
19. Define – Homo- Junction Transistor
When the transistor junction is joined by two similar materials such as silicon- to silicon
or germanium-to-germanium, it is called a homo junction transistor.
20. What do you mean by hetero junction transistor?
When the transistor junction is joined by two different materia ls such as Ge to GaAs, then
it is called a homo junction transistor.
21. What are the applications of tunnel diode?
The applications of tunnel diode are
Relaxation oscillator
Microwave oscillator
Storage device
Pulse generator
High speed switching networks
22. What are the key characteristics of tunnel diode?
The key characteristics of a tunnel diode are its negative resistance region.
23. List the advantages of tunnel diode.
The advantages of tunnel diode are
Low cost
Low noise
High speed
Low power consumption
24. List the disadvantages of tunnel diode.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 17
The disadvantages of tunnel diode are
Low output voltage swing
No isolation between input and output.
25. Define - Varactor Diode
Varactor diodes are p-n junction diodes which provide a voltage variable junction in
microwave circuits when reverse biased.
26. Write the types of waveguide cavity resonators
The types of waveguide cavity resonators are
Rectangular cavity resonator
Circular cavity resonator
27. Mention the applications of IMPATT diodes.
The applications of IMPATT diodes are
Microwave generators
Modulated output oscillators
Receiver local oscillators
Parametric amplifier pumps
IMPATT diodes are also suitable for negative resistance amplification.
28. Explain plasma function in TRAPATT diode.
During the operation of the diode, a high field avalanche zone propagates through the
depletion region and fills the layer with dense plasma of electrons and holes which get trapped in
the low field region behind the zone.
29. What are the advantages of microwave transistors?
Microwave transistors are miniaturized designs to reduce device and package parasitic
capacitances and inductances and to overcome the finite transit time of the charge carriers in the
semiconductor materials.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 18
30. Name the surface geometries available in microwave power transistors.
Three geometries are available. They are
Interdigitated
Overlay
Matrix
31. Mention the applications of Gunn diode amplifier.
Gunn diodes have been used in conjunction with circulator coupled networks in the
design of high level wideband transferred electron amplifiers that have a voltage gain bandwidth
product in excess of 10dB for frequencies from 4 to 16 GHz.
32. What is the need of diffusion and ion implantation?
Diffusion and ion implantation are the two processes used in controlling amounts of
dopants in semiconductor fabrications.
33.Write the types of epitaxy.
The types of epitaxy are
Vapour-phase epitaxy (VPE)
Molecular- beam epitaxy (MBE)
Liquid- phase epitaxy
34. Why monolithic technology is not well suitable for microwave integrated circuits?
Monolithic technology is not well suited for microwave integrated circuits,because the
processing difficulties, low yields and the performance have seriously limited their
applications.
35. What is Lithography?
Lithography is the process of transferring patterns of geometric shapes on a mask to a
thin layer of radiation sensitive material, which is known as resist, for covering the surface of a
semiconductor wafer.
36. Name the circuits used in hybrid MMICs.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 19
Three general types of circuits can be utilized for hybrid MMICs. They are
Distributed micro strip lines
Lumped- element
Thin-film circuits
UNIT V- MICROWAVE TUBES AND MEASUREMENTS
1. State any two sensors used to measure the power. (N / D 09)
Barretter
Thermistor
2. What is bolometer? ( M / J 07)
Bolometer is a power sensor whose resistance changes with temperature as it absorbs
microwave power. Examples: Barretter, Thermistor.
3. What are the possible errors occur in measurement of standing wave ratio? (N / D 12)
The possible errors occur in measurement of standing wave ratio are
V max and Vmin may not be measured in the square law region of the crystal detector.
Probe thickness and depth may produce reflections in the line.
Residual VSWR arises due to mismatch impedance.
Harmonics and spurious signals from source cause measurement errors.
4. State the demerits of single bridge power meter. ( N / D 08)
The demerits of single bridge power meter are
The change of resistance due to a mismatch at the microwave input ports results in
incorrect reading.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 20
The thermistor is sensitive to changes in the ambient temperature resulting in false
reading.
5. What is the principle by which high power measurements could be done by calorimetric
method? ( A/ M 08)
Direct heating method
Indirect heating method.
6. State any four limitations of conventional tubes at high frequencies. ( N / D 11)
The limitations of conventional tubes at high frequencies are
Lead inductance effects
Inter-electrode capacitance effects
Transmit angle effects
Gain bandwidth product limitation.
7. Define - Insertion Loss ( M / J 14)
Insertion loss is a measure of the loss of the energy in transmission through a line or
device compared to the direct delivery of energy without the line or device.
8. Distinguish between thermistor and barretter.
Barretter Thermistor
Barretter has a positive temperature coefficient.
i.e resistance increases with temperature.
Thermistor has negative temperature
coefficient
They are less sensitive They are more sensitive
They need less bias current They need more bias current
Barretters are usually operated at 100 ohms. Thermistors are operated at 100 ohm to 200
ohms.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 21
9. What are the drawbacks of using power meter with single bridge?
The change of resistance due to a mismatch at the microwave input port results in
incorrect reading. The thermistor is sensitive to changes in the ambient temperature in false
reading.
10. Name two methods to measure impedance.
Slotted line
Reflectometer.
11. What is meant by microwave resonators?
Microwave resonators are tunable circuits used in microwave oscillators, amplifiers,
wave meters and filters. At the tuned frequency the circuit resonates where the average energies
stored in field. the electric And magnetic purely real.
12. What are the classifications of power measurements?
The classifications of power measurements are
Low power(less than 10mW)
Medium power ( from 10mW to 10 W)
High power ( > 10 W)
13.Define - Microwave Sensor
The microwave power meter consists of a power sensor, which converts the microwave
power into energy. The corresponding temperature rise provides a change in the electrical
parameters resulting in an output current in low frequency circuitry and indicates the power.
14. Name the method used for high power microwave measurements.
High power microwave measurements can be conveniently done by the calorimetric
method which involves conversion of the microwave energy into heat in a fluid and then
measuring of the dissipating medium.
15. What do you mean by thermocouple sensor?
A thermocouple sensor is a junction of two dissimilar metals or semiconductors. It
generates an emf when two ends are heated up differently by absorption of microwaves in a thin
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 22
film tantalum- nitride resistive load deposited on a Si substrate which forms one electrode of the
thermocouple. This emf is proportional to the incident microwave power to be measured.
16. What do you mean by slotted line?
Slotted line is a fundamental tool for microwave measurements. Slotted line consists of a
section of waveguide or coaxial line with a longitudinal slot. The slot is roughly 1 mm wide and
allows an electric field probe to enter the waveguide for measurement of the relative magnitude
of field at location of the probe.
17.Distinguish between low frequency measurements and microwave measurements.
Low frequency measurements Microwave measurements
At low frequency it is convenient to measure
voltage and current and use them to calculate
power
At microwave frequencies the amplitudes of
the voltage the amplitudes of the voltages and
current on a transmission line are the functions
of a distance and are not easily measurable
At low frequency, circuits are lumped
elements.
At microwave frequencies, the circuit elements
are distributed.
18. Mention the application of two cavity.
The applications of two cavity are as follows
Used in troposphere scatter transmitters
Satellite communication ground stations
Used in UHF TV transmitters
Radar transmitters
19. What is drift space?
The separation between buncher and catcher grids is called as drift space.
20. Define – Velocity Modulation
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 23
The variation in electron velocity in the drift space is known as velocity modulation.
21. Define – Reflex klystron
The reflex klystron is an oscillator with a built in feedback mechanism. It uses the cavity
for bunching and for the output cavity.
22. What is TWTA?
A traveling wave tube amplifier ( TWTA) circuit uses a helix slow- wave non resonant
microwave guiding structure. It is a broadband device.
23. What is the need of Quality factor Q?
Quality factor Q which is a measure of the frequency selectivity of a cavity.
24. Give the comparison between TWTA and klystron amplifier.
TWTA Klystron Amplifier
It is a non resonant wave circuit It is a resonant wave circuit ( Linear O type
device)
Waveband band device due to traveling wave
structures
Narrow band device
Traveling wave structures are used throughout
the system.
Using cavities for input and output circuits.
25. Write the applications of TWT
The applications of TWT are
Medium power satellite
High power satellite transponder output
Radar transmitters.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 24
26. What are the advantages of TWT?
The advantages of TWT are
Bandwidth is large
High reliability
High gain
High duty cycle.
27. What are the drawbacks available in klystrons?
The drawbacks available in klystron are
Klystrons are essentially narrow banded devices
In klystrons and magnetrons, the microwave circuit consists of a resonant structure which
limits the bandwidth of the tube.
28. What is the role of slow wave structures in TWT? ( M / J 13)
Slow- wave structures are special circuits that are used in microwave tubes to reduce the
wave velocity in a certain direction so that the electron beam and the signal wave interact.
29. State any four high frequency limitations? ( N / D 11)
Conventional vacuum triodes, tetrodes and pentodes are less useful signal sources at the
frequencies above 1 GHz due to
Lead- inductance
Interelectrode- capacitance effects
Transit- angle effects
Gain bandwidth product limitations.
30. What are the errors possible sin voltage standing wave ratio measurements?
( N / D 12), ( M / J 13)
Vmax and Vmin may not be measured in the square- law region of the crystal detector.
EC2403- RF and Microwave Engineering VII Semester ECE
Prepared by A.Devasena., Associate Professor., Dept / ECE Page 25
The probe thickness and depth penetration may produce reflections in the line and also
distortion in the field to be measured.
Any harmonics and spurious signals from the source may be tuned by the probe to cause
measurement error.
A residual VSWR of slotted line arises due to mismatch impedance between the slotted
line and the main line.
31. Why magnetron is called a cross field device?
In magnetron, the dc magnetic field and dc electric field are perpendicular to each other
and hence magnetron is called as cross field device.
32. Write a short notes on negative resistance magnetron.
Negative- resistance magnetrons ordinarily operate at frequencies below the microwave
region. This type of magnetron uses a static negative resistance between two anode segments but
has low efficiency and is useful only at low frequencies ( < 500 MHz)