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晶圆背面研磨与湿式刻蚀应力消除工艺3)来氧化硅芯片表面,如式 1 及 式2 所示;(2) 接下来硅芯片表面所形成的 氧化物(SiO 2),可被氢氟酸(HF)溶解而
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