reliability and emerging capabilities of 1060nm...

IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach

A. Kasukawa, Furukawa Electric CompanyR. Lingle, Jr., OFS

Reliability and Emerging Capabilities of 1060nm VCSELs


1060nm Wavelength

850 1060 1310

OFL-

BW55

0(M

Hz*k

m)

Existing OM2 fiber1060nm VCSELs were first developed for proprietary applications

MMF can be optimized for OM3 / OM4 performance at 1060nm

Loss2.1 dB/km1.2 dB/km0.9 dB/km


1060nm wavelength LD (VCSEL) with InGaAs active

Wavelength (nm)

900 1000 1100 1200

Performance

*R.G. Waters et.al., IEEE PTL, 2, pp531-533, 1990

GaAs SQW InGaAs SQW

EBIC image after aging test

DLD growth velocity for GaAs/AlGaAs SQW is much higher than that for InGaAs/GaAs SQW(Especially in high current density)


Number of Optical Channels

25Gbps/ch or higher

Speed, power consumption, reliability, and cost become crucial


Inherent Material Merit in 1060nm VCSELs with InGaAs SL-QW

High Speed at high temperature, owing to high material gain

High material reliability due to slow dislocation velocity

Low power dissipation due to low built-in voltage, high quantum efficiency

0.0

0.1

0.2

0.3

0.4

800 1000 1200 1400 1600Wavelength (nm)

Ener

gy /b

it (p

J/bi

t) TU-Berlin,2009

UCSB,2007

Furukawa, 2010

NEC, 2007

Furukawa 2011

A. Muting et al.,IEEE Journal of Selected topics in Quantum Electronics, vol.15, No. 3, pp 679, 2009

GaAs-QW

InGaAs-QW

High Speed characteristics Power consumption characteristics

S. Imai et al.,IEEE Journal of Selected topics in Quantum Electronics, vol.17, No. 6, pp1614, 2011

Oxide Aperture:~6m

10 - 12.5 Gbps20 - 25 Gbps30 - 40 Gbps


In-plane lasers with InGaAs active layerProven “Telecom grade” Reliability

Encouraging aging result for highly reliable operation (16-year).Never reported for GaAs-active lasers.Lots of terrestrial and under-sea usage.

www.oclaro.com


Summary for large scale reliability test

Condition Quantity (number of chips)

Maximum agingduration (hours)

Device hours@40oC, 6 mA

Number offailures

70oC, 6 mA 1,075 5,000 8.0 x 106 0

90oC, 6 mA 1,121 5,000 1.6 x 107 0

120oC, 6 mA 2,702 2,000 5.4 x 107 0

Total 4,898 7.8 x 107 0

Test procedureHigh temperature: 70, 90 and 120oC, Bias current: 6 mAPackage: commercial 20pin DIP (air ambient; non-hermetic)Failure definition: 2 dB power degradation at 25oC and 6 mAAdopted acceleration factor: Ea = 0.35 eV, n = 0

30 FIT/ch with confidence level of 90%


Over 20,000h Life test at 70C, 90C (I=6mA)


Eye patterns before and after aging at 120C, 6mA

Eye diagram before aging test

Eye diagram after aging test (5000hrs)

No eye pattern degradation was observed in both for 10Gbps and 25Gbps after long-term aging.

10Gbps

Eye diagram after aging test (2000hrs)

Eye diagram before aging test

25Gbps

Ib=5mA Vpp=400mV (ER=6dB)Ib=5mA ER=360mV(ER=6dB)


Preliminary reliability test

-100%-80%-60%-40%-20%

0%20%40%

0 500 1000 1500 2000 2500

Time (hours)

∆P

o (%

)

120℃, 6mA, N=473

One failure was infant failure- Screening condition was not adjusted for 25Gbps device.

Promising result, comparable to those for 10Gbps was obtained.


20Gbps transmission over OM2 MMF using 1060nm VCSEL

Possibility to extremely low power consumption optical link~1.5mW/Gbps


Conclusions

High Speed data transmission

High material reliability

SPEED

POWER CONSUMPTIONRELIABILITY

Low power dissipation

Promising candidate for high speed, low power consumption,high reliability. In development for 28 Gbps applications

1060nm VCSELs can provide following features simultaneously:

reliability and emerging capabilities of 1060nm...

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