rd50 status report

RD50 Status Report- September 2020 –

Radiation hard semiconductor devices

for very high luminosity colliders

RD50 Status Report 2020 - LHCC 02/09/2020

• RD50 Collaboration

• Scientific results 2019/20 (highlights)• Defect and Material Characterization

• Detector Characterization

• New Detector Structures

• Full Detector Systems

• Spares

• RD50 - 5 Year Work Plan (Status of Milestones)

• Outlook

Discussion with LHCC referee – 26.8.2020

Outline:

26 August 2020 1

RD50 Motivation and ChallengeSilicon detectors upgrades and operation

- Radiation Hardness -

• LHC operation

• HL-LHC (High Luminosity LHC)

• detector developments for HL-LHC

• starting after LS3 (~2024-26);

• expect 4000 fb-1 (nominal LHC was 300 fb-1)

• HL-LHC operation & upgrades

• operation of HL-LHC

• damage modelling, evaluation, mitigation

• ATLAS Pixel replacement, LHCb upgrade, …

• FCC – Future Circular Collider

26 August 2020 RD50 Status Report 2020 - LHCC 02/09/2020 2

• Increasing radiation levels

• Semiconductor detectors will face >1016 neq/cm2 (HL-LHC) and >7x1017 neq/cm2 (FCC-hh)

detectors used at LHC cannot be operated after such irradiation

• New requirement and new detector technologies

• New requirements or opportunities lead to new technologies (e.g. HV-CMOS, LGAD,…)

which need to be evaluated and optimized in terms of radiation hardness

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The RD50 Collaboration• RD50: 64 institutes and 403 members


51 European institutesAustria (HEPHY), Belarus (Minsk), Czech Republic (Prague (3x)), Finland (Helsinki,

Lappeenranta ), France (Marseille, Paris, Orsay), Germany (Bonn, Dortmund, Freiburg,

Göttingen, Hamburg (2x), Karlsruhe, Munich(2x)), Greece (Demokritos), Italy (Bari,

Perugia, Pisa, Trento, Torino), Croatia (Zagreb), Lithuania (Vilnius), Montenegro

(Montenegro), Netherlands (NIKHEF), Poland (Krakow), Romania (Bucharest), Russia

(Moscow, St.Petersburg), Slovenia (Ljubljana), Spain (Barcelona(3x), Santander, Sevilla

(2x), Valencia), Switzerland (CERN, PSI, Zurich), United Kingdom (Birmingham,

Glasgow, Lancaster, Liverpool, Oxford, Manchester, RAL)

8 North-American institutesCanada (Ottawa), USA (BNL, Brown Uni, Fermilab,

LBNL, New Mexico, Santa Cruz, Syracuse)

1 Middle East instituteIsrael (Tel Aviv)

4 Asian institutes China (Beijing-IHEP, Hefei, Jilin), India (Delhi)

4 new members since September 2019

Full member list: www.cern.ch/rd50

http://www.cern.ch/rd50

RD50 Workshop statistics


• RD50 holds every year two RD50 workshops

• Average numbers for RD50 Workshops: <35 talks> <74 participants>

• June 2020:

- 36th RD50 Workshop

“first online workshop”• COVID19: The in-person Workshop planned in

Zagreb, Croatia had to be cancelled

• Online Workshop:

Very high number of participants

(241 participants = 60% of collaboration);

34 talks + 4 discussions

• Positive experience:

• highest ever number of participants

• fruitful discussions in discussion sessions

• However, we missed the social contact

and the ‘coffee meetings’

• We learned for the future:

• Future workshops to be tailored as well

for online participation, online discussions

and online presentations.

RD50 Organizational Structure


Co-Spokespersons

Gianluigi Casse and Michael Moll(Liverpool University, UK (CERN EP-DT)

& FBK-CMM, Trento, Italy)

Defect / Material

CharacterizationIoana Pintilie

(NIMP Bucharest)

Detector

CharacterizationEckhart Fretwurst(Hamburg University)

Full Detector

SystemsGregor Kramberger

(Ljubljana University)

• Characterization of

microscopic properties

of standard-, defect

engineered and new materials;

pre- and post- irradiation

• DLTS, TSC, ….

• SIMS, SR, …

• NIEL (calculations)

• Cluster and point defects

• Boron related defects

• SiC based detectors

•Characterization of test

structures (IV, CV, CCE, TCT,.)

•Development and testing of

defect engineered devices

•EPI, MCZ and other materials

•NIEL (experimental)

•Device modeling

•Operational conditions

•Common irradiations

• Wafer procurement (M.Moll)

• Acceptor removal (Kramberger)

• TCAD modeling (J.Schwandt)

• 3D detectors

• Thin detectors

• Cost effective solutions

• Other new structures

• Detectors with internal gain

• LGAD:Low Gain Avalanche Det.

• Deep Depleted Avalanche Det.

• Slim Edges

• HVCMOS

• LGAD (S.Hidalgo)

• HVCMOS (E. Vilella)

• LHC-like tests

• Links to HEP (LHC P2, FCC)

• Links electronics R&D

• Low rho strips

• Sensor readout (Alibava)

• Comparison:

- pad-mini-full detectors

- different producers

•Radiation Damage in

HEP detectors

•Timing detectors

•Test beams

(M.Bomben & G.Casse)

New Structures

Giulio Pellegrini (CNM Barcelona)

Collaboration Board Chair & Deputy: G.Kramberger (Ljubljana) & J.Vaitkus (Vilnius), Conference committee: U.Parzefall (Freiburg)

CERN contact: M.Moll (EP-DT), Secretary: V.Wedlake (EP-DT), Budget holder: M.Moll & M.Glaser (EP-DT) , EXSO: R.Costanzi (EP-DT)

• Organizational

structure not changed

Defect & Material

Characterization

Recent results 2019/20


Defect Characterization• Aim of defect studies:

• Identify defects responsible for Change of Neff ,

Change of E-Field, Trapping, Leakage Current

• Understand if knowledge can be used to mitigate

radiation damage (e.g. defect engineering)

• Deliver input for device simulations to predict

detector performance under various conditions

• Method: Defect Analysis performed with various tools

• DLTS (Deep Level Transient Spectroscopy)

• TSC (Thermally Stimulated Currents)

• PITS (Photo Induced Transient Spectroscopy)

• FTIR (Fourier Transform Infrared Spectroscopy)

• EPR (Electron Paramagnetic Resonance)

• TCT (Transient Current Technique)

• CV/IV (Capacitance/Current-Voltage Measurement)

• MW-PC (Microwave Probed Photo Conductivity)

• PC, RL, I-DLTS, TEM,… and simulations

• RD50: several hundred samples irradiated with protons, neutrons, electrons and 60Co-g


space charge trapping leakage current

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Radiation induced defects with

impact on device performance


RD50 map of most relevant defects for device performance near room temperature:

BiOi(acceptor removal)

Phosphorus: shallow dopant(positive charge)

BD: positive charge higher introduction after proton than after

neutron irradiation, oxygen dependent

E30: positive charge

higher introduction after

proton irradiation than after

neutron irradiation

Leakage

current: V3

Reverse

annealing(negative charge)

Boron: shallow dopant(negative charge)

leakage current

& neg. chargecurrent after g irrad,

V2O (?)

• Trapping: Indications that E205a and H152K are important (further work needed)

• Converging on consistent set of defects observed after p, p, n, g and e irradiation.

• Defect introduction rates are depending on particle type and energy, and some on material!

• Acceptor removal coefficients obtained on a wide range of sensor types

• pin diodes (epi, FZ, MCZ, …), LGAD detectors, CMOS sensors

• after charged hadron irradiation (red) and neutron irradiation (black/blue)


𝑁𝑒𝑓𝑓 Φ = NB0 exp −𝑐𝐴Φ + 𝑔 ⋅ Φ

• Parameterization of acceptor removal established within RD50

• covering the range [B]=1012 to 1018 cm-3 (10 kWcm to 5 mWcm) i.e. damage predictions can be done

Example: 23 GeV proton irradiated epi diodes

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• Acceptor removal: Radiation induced de-activation of acceptors (p-type doping, Boron)

• Impact:

• Macroscopic studies:

• Change of silicon conductivity; Change of sensor depletion voltage and/or active volume

• Loss of gain in LGAD sensors, sets radiation harness limits for timing detectors (ETL, HGTD)

RD50: Dedicated acceptor removal studies

BiOi

Defect studies: Acceptor Removal• Microscopic origin:

• Formation of defects containing Boron that no longer acts as shallow dopant


Bs

Radiation

Damage

• Status

• Large amount of data (Wafers, Detectors, CMOS, LGAD)

• Acceptor removal is parametrized over 6 orders of magnitude in resistivity

• Damage predictions are possible

• Defect engineering (with Carbon) works

but microscopic understanding needs more work!

• Measured defect concentrations do not fully explain the macroscopic observations.

50 100 150 2000

10

20

30

V2 in clusters

H(152)

H(140)

H(116)

BiOi

VOi+CiOi

IO2

H(40)

TS

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A)

Temperature (K)

neutrons, 3.3E+14

protons, 3.3E+14

E(30)

EPI p-type Si, 250 Wcm

Detector Characterization



Transient Current Technique (TCT)

• Pulsed laser induced generation of charge carriers inside detector• Study of: electric field in sensor, charge collection efficiency, homogeneity,..

• Benchmark simulation tools, measure physics parameters from mobility to impact ionization

• New TCT technology: TPA-TCT – Two Photon Absorption TCT


• TCT (red laser)• short penetration length (650nm = 1.9eV)

• carriers deposited in a few mm from surface

• front and back TCT: study electron and hole drift separately

• 2D spatial resolution (5-10mm)

• TCT (infrared laser)• long penetration (1064nm = 1.17 eV)

• similar to MIPs (though different dE/dx)

• top and edge-TCT

• 2D spatial resolution (5-10mm)

• TPA-TCT (far infrared)• No single photon absorption in silicon

• 2 photons produce one electron-hole pair

• Point-like energy deposition in focal point

• 3D spatial resolution (1 x 1 x 10 mm3)

edge-TCT invented

within RD50: 2010

Table-top

TPA-TCT system

Table-top TPA-TCT system• Development of a customized fiber-laser (1550 nm, ~ 200 fs) with external company (Seed funding: CERN KT-Fund grant)

• 2019/20 proof of concept achieved at CERN & commercialization started

• 2020: 2nd laser installed at IFCA, Santander, Spain, … system optimization and development ongoing


• Characterization of un-/irradiated silicon sensors

• charge generation only at focal point

• very good spatial resolution (1 x 1 x 10 mm3)

• 3D mapping of sensors possible

200µm

Si: Single Photon absorption z-scan measurement at CERN

no absorption unless two photons

are absorbed at same time (within fs)

𝑑𝐼(𝑟, 𝑧)

𝑑𝑡= − 𝛼𝐼 − 𝛽𝐼2(𝑟, 𝑧)

charge carrier density Commercialization (2020)

• LPS: Laser Pulse Source

• All-fiber CPA fs pulses generation

• Pulse rep. single shot to 8 MHz

• LPM: Laser Pulse Management

• Pulse energy: <10 pJ to > 10 nJ

• Synchronized shutter.

rise/fall time < 1 us

• D-SCAN: Dispersion scanning

• Pulse duration: 200 fs to 500 fs

• Spectral and temporal

pulse characterization

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Studying Trapping/Detrapping by TCT

Concept: Use subsequent TCT laser

pulses to inject charge carriers into

irradiated silicon sensors and study the

trapping and detrapping from defect

levels by analyzing the TCT signal.


Voltage: 70V

Example: p-type sensor, neutron irradiated (1015 neq/cm2)

• variation of delay between TCT pulses

Conclusion:

• Trapping has significant impact on TCT signals (as function of

repetition frequency, laser intensity, temperature, voltage, ….)

• Excellent dataset for benchmark of sensor simulations

• Extraction of trapping/detrapping parameters possible

[L.Diehl, Freiburg – 36th RD50 Workshop 6/2020]

15

Extreme fluences:3-D sensors have greatest potential for extreme radiation

tolerance. CNM 3-D strip devices after 3x1017 neq cm-2

M. Manna et al.,

36th RD50 workshop

26 August 2020 RD50 Status Report 2020 - LHCC 02/09/2020

Studies with TCT set-up.

New Structures



Sensors for 4D tracking

LGAD: Low Gain Avalanche Detectors• Origin: Pioneered by RD50 with CNM, Barcelona (and later also FBK,Trento)

• RD50 working on LGADs since ≈2010 (> 50 production runs)

• Application: LGAD for timing detectors

• Intrinsic gain of devices allows for excellent timing performance (<50ps)

• Time-tagging of particle tracks in order to mitigate pile-up effects

• To be implemented in ETL (CMS) and HGTD (ATLAS)

• Concept: similar to APD but lower gain O(10), finely segmented for tracking

• Impact ionization in p+-implant (multiplication layer) produces gain

• Tailored multiplication layer ([B]~1017cm-3); challenge: optimize gain vs. breakdown

• Foundries:

• CNM (Barcelona, ES), FBK(Trento,IT), HPK (Japan), IHEP(Bijing, China), Micron(UK),

BNL(USA) and in preparation: CIS(Erfurt, Germany)

17

• Areas of LGAD developments within RD50

• Timing performance• Optimization: sensor thickness, gain layer profile and signal homogeneity (weighting field)

• Fill factor and signal homogeneity• Gain layer needs protection against breakdown (JTE) causing non-efficient area

• Mitigation: New and optimized LGAD concepts investigated

• Radiation Hardness • Problem: Field in gain layer dropping due to “acceptor removal”

• Defect Engineering of gain layer: Use Gallium instead of Boron or Carbon co-implant to impact on defect kinetics

• Modification of gain layer profile

• Performance Parameterisation Model• Predictive model for operation performance (radiation, temperature, thickness, annealing, ….)


𝜎𝑗𝑖𝑡𝑡𝑒𝑟2 =

𝑁𝑜𝑖𝑠𝑒

𝑑𝑉/𝑑𝑡≈𝑡𝑟𝑖𝑠𝑒𝑆/𝑁

LGAD: Gain layer engineeringDefect Engineering of the gain layer

• Carbon co-implantation mitigates the gain loss after irradiation

• Replacing Boron by Gallium did not improve the radiation hardness

Modification of the gain layer profile

• Narrower Boron doping profiles with high concentration peak (Low Thermal Diffusion) are less prone to be inactivated

18

Boron + Carbon

Gallium + Carbon

Gallium

Boron (High Diff)

Boron (Low Diff)

Silicon Depth (a.u.)

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Boron profile

[G.Paternoster, FBK, Trento, Feb.2019] 26 August 2020 RD50 Status Report 2020 - LHCC 02/09/2020

LGAD: Annealing after Irradiation• Annealing changes Neff with time after irradiation: check for influence on timing response.

• Important for temperature scenario in experiments!

• Experiment: HPK LGAD sensors (1.3 x 1.3 mm2), 50 mm thickness, neutron irradiated (4x1014 to 3 x 1015 neq/cm2), annealing at 60°C

19

Better charge collection and time resolution for 0 min annealing;

after that no strong change (with exception of very long annealing > 10.000 min)

26 August 2020 RD50 Status Report 2020 - LHCC 02/09/2020[G.Kramberger, JSI – 36th RD50 Workshop 6/2020]

Charge collection (beta source) time resolution

LGAD: Fill factor & performance improvements• Two opposing requirements:

• Good timing reconstruction needs homogeneous signal ( i.e. no dead areas and homogeneous weighting field)

• A pixel-border termination is necessary to host all structures controlling the electric field

• Several new approaches to optimize/mitigate followed:


Trench Isolation LGAD

• Full qualification, irradiations and timing performance tests on all design flavours ongoing

AC-LGAD Invers LGAD

traditional gain isolation

dead area

trenches isolation (HD-LGAD)

dead area

Front: segmented readout

Back: gain layer

Concepts simulated, designed, produced and tested in 2018/19

Deep Junction LGAD

..new concept 2020

Front: segmented readout

Gain layer located

deep under front electrodes

21

M. Tornago et al.,

36th RD50 workshop

LGAD design variation: resistive AC-

coupled Silicon Detectors

Designed for 4-D

tracking, 100% fill

factor.


Position

Timing

22

LGAD design variation: Deep Junction LGAD

Y. Zhao et al., 36th

RD50 workshop

Designed for high granularity and 100% fill factor.


RD50: CMOS developments (150 nm)


2017 2018 2019 2020

RD50-MPW1 RD50-DAQ (Caribou) Hit map e-TCT after irradiation

RD50-MPW1 I-V

RD50-MPW2

TCADI_LEAK

V_BD Improved

electronics

performance

2020/21

MPW3

[E.Viella Figueras, Liverpool - RD50 Workshop 6/2020]

Timeline: good results with MPW2, intense characterisation campaign, move design forward to frontier performance (speed, size, …)

24

HV-Cmos developments (150 nm)

E. Vilella et al., 36th

RD50 workshop

Timeline: good results with MPW2, intense characterisation campaign,

move design forward to frontier performance (speed, size, …)

One more MPW to

push performance


Full Detector Systems



Radiation Effects in LHC Experiments

• 5 workshops on “Radiation Effects at LHC Experiments and Impact on

Operation and Performance” organized (2011 - 2019)

• Common Workshop: (ALICE), ATLAS, CMS, LHCb, RD50

• Sensor Measurements

• Electronics/Optoelectronics

• Radiation Simulation and Monitoring

• Sensor Simulation

• Outcome and follow-up:

• Generally good agreement between RD50 damage prediction models

(e.g.“Hamburg model”) and radiation damage observed by the LHC

experiments.

• More coherent approach in data analyses agreed and documented.

• Modelling will have to be refined in some areas for run 3 !

• CERN Yellow Report written and edited by a team from RD50 & all

LHC experiments is under preparation (150 pages, in review phase)

summarizing observations, comparing results from different

experiments against each other, listing open questions and outlining

further work towards Run 3.


https://indico.cern.ch/event/769192

Radiation Effects in LHC Experiments

• Workshop on radiation effects in LHC Experiments (Feb.2019)


ATLAS B-layer

data vs. MC&NIEL

strong z-dependence;

unexpected

Plots: Radiation Effects Workshop Feb.2019K.Mochizuki(ATLAS SCT) J.L.Agram (CMS Tracker), Aiden Grummer

(ATLAS Pixel) , G.Sarpis (LHCb Velo) , F.Feindt (ATLAS Pixel)

Leakage currents in ATLAS SCT

and CMS tracker and model predictions

LHCb Velo depletion voltage

reduced by annealing;

according to model

CMS pixel layers;

deviation of Vdep from

modelling at high fluences

https://indico.cern.ch/event/769192

28

In collaboration with experiments: monitoring radiation

B. Nachman et al., 36th RD50 workshop 26 August 2020 RD50 Status Report 2020 - LHCC 02/09/2020

Spare slides


RD50 Work Plan


RD50 – 5 Year Work Plan• 5 year work program submitted in May 2018

• Approved by CERN Research Board in June 2018

• Workplan [70 milestones]

• Defect and Material Characterization [16 MS]

• p-type silicon [7 MS]

• Cluster defects [4 MS]

• Theory of defects [5 MS]

• Device Characterization & Device Simulation [21MS]

• Silicon materials [5 MS]

• Extreme fluences [5 MS]

• Experimental techniques [3 MS]

• Surface damage [1 MS]

• TCAD simulations [7 MS]

• New structures [21 MS]

• 3D sensors [6 MS] ; LGAD [4 MS]

• CMOS [6 MS] ; New Materials [5 MS]

• Full Detector Systems [12 MS]

• LHC [7 MS]; HL-LHC [3 MS]

• FCC [2 MS]


https://cds.cern.ch/record/2320882/files/LHCC-SR-007.pdf

https://cds.cern.ch/record/2320882/files/LHCC-SR-007.pdf

WP1: Defect and Material

Characterization

• Main activities• Detection and microscopic characterization of standard and material engineered silicon via dedicated

techniques (DLTS, TSC, TDRC, SIMS, ICP-MS, PITS, FTIR, TCT, EPR, HRTEM)

• Identification of electrically active defects induced by irradiation responsible for trapping, leakage current,

change of Neff , change of E-Field

• Studying possible application for radiation hardening

• Deliver input for device simulations (e.g. TCAD) to predict detector performance under various conditions

• 16 Milestones [2018-2022]

• WP 1.1 p-type silicon [7 MS]

• WP 1.2 Cluster defects [4 MS]

• WP 1.3 Theory of defects and defect kinetics modeling [5 MS]


Defect and Material

Characterization• WP 1.1. Electrically active defects in p-type silicon

Analysis of electrically active defects and of the radiation induced changes in the electrical

characteristics of devices built on p-type silicon.

• M1: Detection and characterization of all radiation induced defects in STFZ and engineered silicon (Q3/2019)

• M2: Determine defect annealing behaviour in STFZ and engineered silicon. Correlation with device

performances (Q4/2019) [M1/M2: some ongoing work on epi sensors]

• M3: Determine defect transformations and kinetics in STFZ and engineered silicon after treatments at high

temperatures (between 150 °C and 350 °C). Correlation with the device performance (Q3/2020)

• M4: Identify the role of impurities in defect formation (Q1/2021)

• M5: Detection/characterization of radiation induced defects in LGAD and HV-CMOS sensors made with

STFZ and engineered p-type silicon, establishing annealing behaviour and correlation with electrical

performance (Q3/2021)

• M6: Validity tests on optimized material engineered sensors (pads, LGADs and HV-CMOSs). Comparison

between prediction and experiments (Q1/2022)

• M7: Validity tests on finally optimized material engineered sensors (pads, LGADs and HV-CMOSs) (Q3/2023)


2019

Milestones

2021

milestonesChallenge!

MS colour coding:

• fully achieved

• ongoing/ mostly achieved

• to be done / partly achieved

2020 Milestone

2022/23

milestones

Defect and Material

Characterization

• WP 1.2. Microstructural Investigations on extended and clustered defectsThis work targets microstructural investigations of extended and clustered defects by electron microscopy:

• M1: Microstructural characterization of the radiation induced clustered defects (fluences between 1015 and 1017 neq cm-2) and monitoring of the evolution of clusters at 80 °C (Q3/2019)

• M2: In situ- annealing studies at 5 temperatures (between 150 °C and 350 °C) in order to determine the structural transformations of the extended and clustered defects (Q3/2020)

• M3: Microstructural characterization of the oxide-semiconductor interface in irradiated LGADs and HV-CMOS devices, time evolution at 80 °C (Q3/2021)

• M4: Microstructural characterization of the oxide-semiconductor interface in irradiated optimized LGADs and HV-CMOS devices (Q3/2022)

• WP 1.3 Theory of defects and defect kinetics modelling• M1: Modelling of the detected defect generation/kinetics and of the impact on the device performance corresponding to

annealing treatments at 80 °C (Q3/2020)

• M2: Modelling of the detected defect generation/kinetics and of the impact on the device performance corresponding to annealing at temperatures between 150 °C and 350 °C and final assessment of the role of the intentional added impurities (Q1/2021)

• M3: Identification of the optimal impurity concentrations for pads, LGADs and HV-CMOSs as input for production. (Q3/2021)

• M4: Improvements of the developed models according to validity test foreseen as 1.1-M6 and provide new optimization solutions for 5.1.1-M7. (Q3/2022)

• M5: Validity test for the developed theoretical models based on the results obtained on 1.1-M7 optimized sensors (Q3/2023)


MS colour coding:

• fully achieved

• ongoing/ mostly achieved

• to be done / partly achieved

WP2: Device Characterization

and Device Simulation

• 21 Milestones [2018-2022]

• WP 2.1. Silicon materials [5 MS]

• WP 2.2. Extreme fluences [5 MS]

• WP 2.3. Experimental techniques [3 MS]

• WP 2.4. Surface damage [1 MS]

• WP 2.5. TCAD simulations [7 MS]


WP 2: Device Characterization


• WP 2.1. Silicon Materials

FZ p-type silicon will be used for ATLAS and CMS upgrades. In running pixel systems

oxygen enriched (DOFZ) n-type with n-side readout is used. For radiation hardening

different impurity engineered material like MCz, oxygen enriched epitaxial (DOEPI) or

nitrogen enriched FZ or EPI will be tested. Also the optimal thickness of the sensor

material has to be studied in more detail.

• M1: Development of impurity engineered p-type silicon with possible vendors (Topsil for N

enriched FZ, …) (Q3/2019)

• M2: Search for possible production of nitrogen enriched epitaxial silicon (e.g. ITME) (Q3/2019)

• M3: Production of diodes, strip and pixel sensors with engineered materials by different vendors

(CiS, CNM, FBK, ….) and field tests (Q3/2019)

• M4: Several irradiation campaigns with different particles up to fluences exceeding 1017 neq/cm2

on standard and engineered materials (Q4/2020)

• M5: Macroscopic studies on all irradiated devices including Edge-TCT, TPA-TCT and

investigations with radioactive sources/test-beams, including annealing studies (Q3/2023).




•WP 2.2. Extreme Fluences

Device properties (I-V, C-V-f, CCE) on different p-type silicon materials to

fluences ranging from 1016 to 5×1017 neq cm-2 with neutrons and protons of

different energies.

• M1: Precise mobility parametrization for electrons and holes (Q4/2019)

• sum of hole and electron mobility characterized (effective mobility)

• M2: Development of method for extraction of trapping times/distances from the

measured data (Q3/2020)

• M3: Establishing leakage current behavior at extreme fluences (Q3/2020)

• M4: Measurement of recombination lifetimes in silicon bulk (Q3/2021)

• M5: Modeling/parameterization of CCE(fluence, voltage, annealing time)

(Q3/2023)




• WP 2.3. Experimental techniquesBeside standard device characterization tools (I-V, C-V, TCT), more complex systems like “Edge-TCT” and

“Two Photon Absorption (TPA)” technique became available.

• M1: Full specification of a TPA-TCT method for the characterization of irradiated devices (Q4/2018)

• M2: Commissioning of the top-bench fiber-based femto second laser TPA-TCT setup at the SSD/CERN (Q4/2019).

• M3: Phenomenological parametrization of the radiation effects on diodes using the TPA-TCT method (Q3/2020)

• WP 2.4. Surface Damage

The build-up of oxide charges in the passivation layers and traps in the SiO2-Si interface by ionizing

radiation influences the electric field at the structured implants and the surface generation current. This

affects the performance of irradiated sensors and it can be of increasing importance with thin and more

complex devices (e.g. HV-CMOS). RD50 has a dedicated research effort.

• M1:Investigation of surface damage on test structures with oxide and oxide-nitride passivation layers

irradiated with protons up to 1MGy (Q3/2020).

• no focus in this area at the moment; existing parameterizations are sufficient for modeling




• WP 2.5. TCAD simulations and custom device simulators

• M1: Comparison of commercial TCAD tools; preparation of a recommendation for

parameters and physics models (Q4/2019)

• …document in preparation (Status presented on 06/2020 RD50 Workshop)

• M2: Development of a reliable radiation damage model (I-V, C-V, CCE and the E-

field) covering the HL-LHC fluences for protons and neutrons for a given operation

temperature (Q4/2020)

• M3: Model M1 extended to cover temperature dependence of the bulk-damage

related effects from room temperature down to -30 °C. (Q3/2021):

• M4: Model from M2 extended to cover annealing effects (Q3/2022):

• M5: Model of the donor and acceptor removal (SiPMs, LGAD, CMOS,..) (Q3/2020):

• M6: Surface damage model with implementation of surface damage in p-type

segmented sensors (Q1/2021)

• M7: Evaluation of possible implementation of cluster defects in commercial TCAD

device simulators using a charge carrier occupation dependent energy level

distribution (Q2/2021)


WP3: New Structures

New structures based on silicon substrates are, possibly together with

materials other than silicon, the most promising options to extend

radiation tolerance to the region of 7-8×1017 neq/cm2.

• 21 Milestones [2018-2022]

• WP3.1 3D sensors [6 MS]

• WP 3.2 LGAD [4 MS]

• WP 3.3 CMOS [6 MS]

• WP 3.4 New Materials [5 MS]


WP3.1: 3D detectors

• WP 3.1. 3D detectors

• M1: full radiation tolerance study of 3D pixels connected to the RD53A chip (Q3/2019).

• M2: radiation tolerance studies of 25x100-1E pixel cell design and the feasibility (yield) of

the 25x100-2E pixel cell layout (Q4/2019).

• M3: final radiation tolerance study of 3D pixels connected to the RD53B chip (Q4/2020)

• M4: Understanding the limit of the radiation hardness of the 3D geometry up to 1017neq/cm2

(Q2/2021)

• M5: Evaluation of the time performances of new 3D geometries (Q3/2020).

• M6: Design and simulation of new 3D detectors geometries for operation at 8x1017neq/cm2

(Q4/2022).


WP3.2: Sensors with

intrinsic gain

• WP 3.2. Sensors with intrinsic gain

• M1: Understand the effect of Carbon and Gallium on gain after irradiation (Q1/2019)

• M2: Model the acceptor removal effect after irradiation (Q3/2019)

• M3: Produce new LGAD design to increase the fill factor (Q2/2020)

• M4: Design and simulate new LGAD geometries for operation at 1×1017neq/cm2 (Q4/2022)


WP3.3: CMOS

and monolithic devices

• WP 3.3. CMOS and monolithic devices

• M1: Characterization of the diodes and readout electronics of unirradiated and irradiated RD50-MPW1 samples (Q4/2018).

• New intermediate milestone M1.2: Design and submission of RD50-MPW2 (Q1/2019). Achieved

• New intermediate milestone M1.3: Characterization of unirradiated and irradiated RD50-MPW2 samples (Q4/2019, Q1/2020).

Developing DAQ at the moment

• M2: Design and submission for fabrication of RD50-ENGRUN1 (Q4/2018). Ongoing

• M3: Characterization of unirradiated and irradiated RD50-ENGRUN1 samples (Q3/2019, Q3/2020).

Postponed

• M4: Characterization of irradiated backside biased RD50-ENGRUN1 samples for operation beyond 1016 neq/cm2 (Q4/2020).

Postponed

• M5: Studies of stitching process options (Q4/2021).

• M6: Characterization of unirradiated and irradiated stitched samples (Q4/2022).


WP3.4: New Materials

• WP 3.4. New Materials

• M1: Fabricate new radiation detectors in different Wide Band Gap (WBG) high quality

materials (Q4/2019).

• M2: Study the radiation hardness of detectors based on WBG materials (Q2/2020).

• M3: Understand the feasibility of large areas detectors based on WBG materials

(Q2/2021)

• M4: Investigate the fabrication of radiation detectors based on 2D materials (Q3/2021).

• M5: Explore operations at 8×1017 neq/cm2 (Q4/2022) using innovative materials.

• Comment M1/M2: Production of SiC sensors started and results starting to come in.


WP4: Full Detector SystemsExtensive studies of segmented detectors are being performed withinRD50 with strip and pixel readout systems especially developed byAlibava and PSI. RD50 is an ideal testing environment for thedevelopment of detection systems. RD50 methods are complementaryto the ones of the large experiments and are based on mini-stripdetectors and pixels. Beyond the measurements on the segmentedsensors, RD50 contributes to the analyses and understanding of datataken on the operating experiments.

• 12 Milestones [2018-2022]

• WP 4.1 LHC [7 MS]

• WP 4.2 HL-LHC [3 MS]

• WP 4.3 FCC [2 MS]



• WP 4.1. LHC: Radiation Damage in operating

tracking detectorsRD50 has a unique role in creating tools and dialogue for the modelling and monitoring of

in-situ detector systems and actively collaborates with ATLAS, CMS, and LHCb.

• M1: Hold a follow-up radiation damage workshop at the end of Run 2. Produce CERN Yellow Report

documenting the status and experience gathered (Q1/2019).

• M2: Develop common software that can be used for making comparisons to irradiated sensors at test

beams (Q3/2019).

• M3: Complete a program of irradiation and test beam campaigns with accurate thermal control to

carefully study the impact of annealing with Run 2-like levels of irradiation (Q3/2019).

• M4: Using the full Run 2 dataset and digitization models that incorporate radiation damage, tune TCAD

radiation damage parameters to data and establish systematic uncertainties on these parameters.

RD50 will maintain a database of models and parameters (Q4/2019).

• M5: Using the full Run 2 dataset, lab and test beam data to develop a model that incorporates a non-

uniform E-field and annealing effects (Hamburg + TCAD). The fine-tuning of this model will require

further work (Q4/2020).

• M 2021-2023: Repeat and extend the in-situ studies for Run 3.

• M6: During LS3 we intent to perform a post-operation characterization of de-installed LHC sensors.

RD50 Status Report 2020 - LHCC 02/09/2020 -46-26 August 2020


• WP 4.2. HL-LHC• M1: Understanding dependence of CCE/CM in segmented detectors on long-term bias at different

annealing stages (Q4/2020).

• M2: Understanding the noise performance in CM operation mode at high voltages and modelling it for

fast electronics readout (Q4/2020).

• M3: Comparative studies of mini-strip detectors from two main producers (Infineon, HPK) in terms of

CCE/CM differences (Q4/2020). (Infineon no longer producing detectors)

• WP 4.3. FCC• M1: Punch Through Protection (PTP) structure at high fluences, beyond that of strip sensors (Q2/2021)

• M2: CCE studies of different geometry sensors after extreme fluences of up to 5-6×1017 cm-2 (3D

samples of different columns widths, mini-strips, pads). The most challenging action will be the readout

of segmented devices (Q3/2022).

RD50 Status Report 2020 - LHCC 02/09/2020 -47-26 August 2020

RD50 common projects• Common Projects (2017 – 2020)

• 2017-01 LGAD based on EPI wafers (G.Pellegini, CNM, Barcelona)

• 2017-02 TPA TCT on CMOS sensors (I.Vila, Santander)

• 2017-03 LGAD fabricated with epitaxial layer (G.Pellegrini, CNM, Barcelona)

• 2017-04 RD50 CMOS submission (Gianluigi Casse, Liverpool, UK / Vitaliy Fadeyev, SCIPP, USA)

• 2017-05 50 µm thin LGAD fabricated with Ga multiplication layer (Joern Lange, IFAE Barcelona)

• 2017-06 Thin LGADs characterization using IBIC and time-resolved IBIC at CAN (Carmen Jiménez-Ramos, Sevilla)

• 2017-07 MPW run with LFoundry (Eva Vilella, Liverpool)

• 2017-08 50 µm thin AC-LGAD (Mar Carulla, CNM Barcelona)

• 2018-01 Development of Segmented LGAD with small pixels and high Fill-Factor (Giovanni Paternoster, FBK)

• 2019-01 RD50-MPW2 (Eva Vilella, Liverpool)

• 2019-02 Proof of concept of 3D detectors fabricated in Silicon Carbide (SiC) semiconductor layers(Sofia Otero-Ugobono, CNM Barcelona)

• 2019-03 Schottky diodes on Epitaxial Silicon for Radiation Damage Characterization of CMOSMAPS (Giulio Villani, STFC Rutherford Appleton Laboratory)

• 2020-01: 3D detectors optimized for timing applications (Gregor Kramberger, JSI,Ljubljana)

• 2020-02: Proof-of-concept and radiation tolerance assessment of thin pixelated Inverse Low Gain Avalanche Detectors (ILGAD) (Ivan Vila, UC-CSIC, Santander)


Outlook & Request to LHCC• RD50 outlook:

• Roadmap given in 5 Year Workplan (2018-2023) https://cds.cern.ch/record/2320882

• Milestone status discussed in depth with LHCC referee on 26.8.2020 (i.e. today)

• RD50 MOU

• RD50 Memorandum of Understanding (MoU) finalized and signed by CERN Research DG in May 2019

• Resources:

• Every RD50 institution is contributing 2kCHF/year to the RD50 common fund (CF).

• The CF is used to finance common projects and to support common activities.

• "RD50 common projects" receive a financial contribution from the CF within rules defined in the MOU.

Remaining costs are shared between the institutions participating in the project.

• Most RD50 projects are performed as in-kind contributions supported by other funding (national funding

agencies, successful competitive funding proposals,….).

• RD50 is planning to continue this funding concept.

• Resources from CERN (Host lab) (as previous years)

• Operation of the RD50/Solid State Detectors Lab (1 physicist, 0.5 technician & 100kCHF/year)

• Access to CERN and EP-DT facilities: Irradiation facilities, Bond Lab, Solid State Detector Lab,…

• Administrative support at CERN through EP-DT secretariat

• Acknowledgement:

• The CERN RD50 core team is supported through the EP Department and participates in the CERN EP

R&D program for future experiments.


https://cds.cern.ch/record/2320882

rd50 status report

Documents