quo vadis laser - swissphotonics · swiss laser net, buchs 2010 © trumpf eckhard meiners -...
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Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF
Quo Vadis Laser
Dr. Eckhard Meiners
General Manager
TRUMPF Laser Marking Systems AG
Buchs, December 2nd 2010
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 2
R&D Introduction Growth Maturity Saturation Decline Stage
Sale
s
Stages of the Product Life Cycle
(Qualitative Estimation)
CW Lasers
Ultra Short Pulse Lasers
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 3
R&D Introduction Growth Maturity Saturation Decline Stage
Sale
s
Stages of the Product Life Cycle
(Qualitative Estimation)
Disk Lasers
Diode Lasers
CO2 Lasers
Fiber LasersLamp-pumped
SSL
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 4
TRUMPF Business Unit Laser Technology
Machine Tools/
Power ToolsMedical SystemsElectronicsLaser Technology
TRUMPF Photonics,
Princeton, USA
TRUMPF Laser
Marking Systems AG,
Grüsch, CH
TRUMPF Laser
GmbH + Co. KG,
Schramberg
SPI Lasers,
Southampton, UK
TRUMPF Laser- und
Systemtechnik
GmbH, Ditzingen
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 5
CW Laser Concepts in Material Processing
LPSSL
CO2
Disk
Fiber
LPSSL
CO2
Diode
Disk
Fiber
LPSSL
CO2
20102000 2020…
What are the drivers for a
broadening or the
convergence of the
technology portfolio?
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 6
Drivers of the Technology Portfolio
1. Specialization of laser usage in the manufacturing world:
Applications drive special needs for beam characteristics.
- Brightness
- Wavelength
- Power
- Pulse width and pulse shape
2. Invest and TCO:
Cost is paramount, however, a more differentiated approach is needed.
Application-specific models will succeed.
- Invest
- Energy consumption
- Process efficiency and process cost (i.e. cutting gas consumption)
- Maintenance
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 7
Example: Cost and Complexity of 4kW cw System
ComplexityComplexity
Power Supply Pump Beam Shaping Beam delivery
Cost and performance of diodes will substantially impact system cost performance.
Competition of concepts will lead to specialized systems for individual power and
brightness levels.
Complexity Complexity
resonatorlow brightness
diode barsDisk
resonatorhigh brightness
diodesFiber
passive systemhigh brightness
diodesDiode
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 8
Example of Specialization at the Customer: Cutting
Thin sheet metal
cutting with SSL:
TruLaser 5030
Thick sheet metal
cutting with CO2-laser:
TruLaser 3030
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 9
Future Topic (1): High Power Ultrafast Lasers
Ultrafast lasers will become the new
workhorse:
- Kilowatt-class ultrafast lasers for
industrial production
- Modulation of pulse width and duration
- Modulation of brightness
Application fields:
- Mass production of lightweight structures
- Substitution of less energy efficient
processes
- Enhancement of existing and
established (laser) processes
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 10
Solar Cell Production: P1 Sribing of CI(G)S modules
Patterning of Molybdenum
Burr free
Melt free
No Delamination
Isolation (P1)
Spot diameter: 40 – 50 µm
Feed Rate: 6 – 8 m/s
ns
ps
Risse
Schmelze
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 11
Laser Specifications – Demands
-50 -40 -30 -20 -10 0 10 20
1028 1030 1032 1034Inte
nsity (
a.u
.)
Delay (ps)
Wavelength (nm)
TruMicro
5050
TruMicro
5250
TruMicro
5350
Mittlere
Leistung
50 W 30 W > 15 W
Wellenlänge 1030 nm 515 nm 343 nm
Pulsdauer < 10 ps < 10 ps < 10 ps
Max.
Pulsenergie
250 µJ 125 µJ > 75 µJ
Pulsfrequenz 200-800 kHz 200-800 kHz 200-800
kHz
Strahlqualität M ² < 1.3 M² < 1.3 M² < 1.3
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 12
Products – Patterning CI(G)S
TruMicro 5050 TruMicro 5250 TruMicro 5350
Average Power 50 W 30 W > 15 W
Wavelength 1030 nm 515 nm 343 nm
Pulse length < 10 ps < 10 ps < 10 ps
Max. Pulse energy 250 µJ 125 µJ > 75 µJ
Rep. rate 200-800 kHz 200-800 kHz 200-800 kHz
Beam quality M ² < 1.3 M² < 1.3 M² < 1.3
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 13
45 nm
800 nm
1,5 µm
Min. Struktur ~ λ :
ArF – Excimer 193 nm
(F2 – Excimer 157 nm)
Zukunft: EUV: 13.5 nm
Future Topic (2): CO2- Lasers for EUV Generation
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 14
Laser Produced Plasma EUV Source Architecture
Three major subsystems: Laser, BTS and Source Vessel
isolator
isolator
Multi-Stage
CO2 Laser
(in sub-fab)
Beam Transport
and Focusing
System
(through the fab
floor)
. . . . . . . . .
.
EUV Source Vacuum Vessel
(inside the scanner)
Collector
Droplet Generator
IF Protection
Droplet Catcher
BTS
Metrology
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 15
EUV-System
Amplifyer
Amplifyer
Seed-Laser EUV
Amplifier
Amplifier
Sn nozzle
Seed-Laser
Laser Produced Plasma Source
EUV
Collection Optic
Illumination OpticsReflection Type Mask
Projection Optics
Wafer Stage
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 16
CO2 Laser setup: 3 * TLF 15.000 (15.000W)
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 17
CO2 Laser setup: picture, made in production
Eckhard Meiners - 02.12.2010Swiss Laser Net, Buchs 2010 © TRUMPF 18
Cymer’s LPP Source for ASML NXE 3100 Scanner
0.5 MW Electricity=> 50kHz Rep Rate500 ns pulses0.4 J Energy+30um tin droplets=>100W EUV Power=> 2 W EUV at workpiece