punch through protection of heavily irradiated atlas07 mini- sensors . status report

J.Bohm, 21st RD50 Workshop, CERN 1

Punch through protection of heavily irradiated ATLAS07 mini- sensors.

Status report

Jan Bohm, Institute of Physics ASCR, Prague

Peter Kodys, Tomas Jindra, Zdenek Dolezal, Jan Scheirich, Charles University in Prague

Petr Masek, Michael Solar, Institute of Experimental and Applied Physics of Czech Technical University in Prague

11/15/2012

J.Bohm, 21st RD50 Workshop, CERN 211/15/2012

The performance of the sample of 75 n-in-p HPK miniature 1cm*1cm sensors developed by ATLAS Collaboration for LHC upgrade [Y. Unno, et.al., Nucl. Inst. Meth. A636 (2011) S24-30] with different punch through structures, BZ4A-D, and with three different ion concentrations of 2E12, 4E12 and 1E13 ion/cm^2 of the P-stop and P-stop + P-spray separation is studied before and after irradiation with the aim to select the most suitable P-stop ion concentration and punch through structure as a protection against beam splashes – protection of coupling capacitorThis report is a preliminary compilation of measured characteristics.

-Irradiation of the sample of miniature sensors

-Bulk characteristics, IV & CV measurement

-Interstrip capacitance and Interstrip resistance

-Punch Through Protection and PT voltages

The micro-strip silicon miniature sensors of 1cmx1cm (strip length 0.8cm) are ATLAS07 Series fabricated by Hamamatsu Photonics (HPK) using 6” (150 mm) process technology . The baseline is p-type float zone silicon with crystal orientation <100> and having thickness of 320 μ. Sensors are single-sided with AC coupled readout n-type strips which are biased through polysilicon resistors. One hundred readout strips with pitch 74.5 μ are electrically isolated by a common and floating p-implant (‘p-stop’ isolation)

Outlook


Sample of HPK miniature sensors

11/15/2012

From Hamburg we received next 12 sensors BZ4A-D of Series 3 (wafers 264,278 and 281) with P-stop ion concentration 4E12 ion/cm^2. Many thanks to colleagues from DESY.

Wafer Isolation Ion/cm^2 Fluency neq/cm^2 Particles Where AnnealingW06 Pspr+Pstp 2E+12 4E+14 neutrons Ljubljana 80min/60degCW10 Pspr+Pstp 2E+12 2E+15 neutrons Ljubljana 80min/60degCW17 Pstop 2E+12 4E+14 neutrons Ljubljana 80min/60degCW19 Pstop 2E+12 2E+15 neutrons Ljubljana 80min/60degC

W278 Pstop 4E+12 4E+14 neutrons Ljubljana 80min/60degCW281 Pstop 4E+12 2E+15 neutrons Ljubljana 80min/60degCW31 Pstop 2E+12 4E+14 p 23GeV/c CERN ---W91 Pstop 1E+13 4E+14 neutrons Rez Prague 80min/60degCW93 Pstop 1E+13 2E+15 neutrons Rez Prague 80min/60degCW97 Pstop 1E+13 1E+16 neutrons Rez Prague 80min/60degC

Irradiation of sensors BZ4A, B, C and D for each wafer

Many thanks to Vlado Cindro , Morris Glaser and Jan Kucera


IV characteristics – non-irradiated-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0

ATLAS07 pre-series3 P-stop 2E12 BZ4A-D

W14 A W14 B W14 C W14 D W17 A W17 B W17 C W17 D W19 A W19 B W19 C W19 D W31 A W31 B W31 C W31 D

Bias [V]

Curr

ent [

nA]

-1000-800-600-400-2000

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0

ATLAS07 Series3 P-stop 4E12BZ4A-D

W264 AW264 BW264 CW264 DW278 AW278 BW278 CW278 DW281 A W281 BW281 CW281 D

Bias [V]

Curr

ent [

nA]

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0

ATLAS07 series 2nd STD P-stop 1E13 BZ4A-D

W75 A W75 B W75 C W75 D W78 A W78 B W78 C W78 DW80 A W80 B W80 C W80 D W81 A W81 B W81 C W81 D

Bias [V]

Curr

ent [

nA]

0 -60-120

-180-240

-300-360

-420-480

-540-600

-660-720

-780-840

-900-960

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0

ATLAS07 series 2nd HPK P-stop 1E13 BZ4A-D

W89 A W89 B W89 C W89 D W91 A W91 B W91 C W91 D W93 A W93 B W93 C W93 D W97 A W97 B W97 C W97 DBias [V]

Curr

ent [

nA]

Measured sensors were placed on the table without vacuum chuck jig to avoid possible strong stresses which could cause breakdowns.

11/15/2012


IV characteristics – non-irradiated

11/15/2012

-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

ATLAS07 pre-series 3rdPstop (2E12) + Pspray (2E12)

BZ4A-D

W04 AW04 B W04 C W04 D W05 A W05 C W05 D W06 A W06 B W06 C W06 D W10 A W10 B W10 C W10 D

Bias [V]

Curr

ent [

nA]

All sensors with p-stop isolation and with different ion concentrations were successfully operating up to 1000V, no onset of micro-discharges was observed.On other side, sensors with P-stop + P-spray isolation behaves differently and an onset of breakdowns are above already Vbias=900V.


-1000-800-600-400-20001

10

100

1000 IV characteristics of irradiated ATLAS07 sensorsWafer 91&93 Pstop=1E13 ion/cm^2 Rez near Prague

Wafer 278&281 Pstop=4E12 ion/cm^2 LjubljanaWafer 19&17 Pstop=2E12 ion/cm^2 Ljubljana

Current normalized to T=-10degC

W91 A 4E14

W91 B 4E14

W91 C 4E14

W91 D 4E14

W93 A 2E15

W93 B 2E15

W93 C 2E15

W93 D 2E15

W278A 4E14

W278B 4E14

W278C 4E14

W278D 4E14

W281A 2E15

W281B 2E15

W281C 2E15

W281D 2E15

W19A 2E15

W19B 2E15

W19D 2E15

W17B 4E14

Bias [V]

Leak

age

curr

ent [

µA]

An onset of micro –discharges is observed for irradiated sensors to fluency 4E14 neq/cm^2 contrary to fluency 2E15 neq/cm^2 where no breakdowns are visible.Higher current measured on wafers W91 and W93 is under study (irradiated in Rez).

J.Bohm, 21st RD50 Workshop, CERN

CV Characteristics

11/15/2012

-400-300-200-10000

0.0004

0.000800000000000001

0.0012

0.0016 ATLAS07 pre-series 3 Pstop 2E12 BZ4D

W14 DW17 DW19 DW31 D

Bias [V]

!/C

2̂ [1

/pF̂

2]

-400-300-200-10000

0.0004

0.000800000000000001

0.0012

0.0016ATLAS07 Series 3 Pstop 4E12

BZ4D P22

W264 DW278 DW281 D

Bias [V]

!/C^

2 [1

/pF̂

2]

-400-300-200-10000

0.0004

0.000800000000000001

0.0012

0.0016ATLAS series 2nd STD Pstop 1E13 BZ4D

W75 DW78 DW80 DW81 D

Bias [V]

1/C

2̂ [1

/pF̂

2]

-400-300-200-10000

0.0004

0.000800000000000001

0.0012

0.0016ATLAS07 series 2 HPKex Pstop 1E13

BZ4D

W89 D

Bias [V]1/C

2̂ [1

/pF^

2]

Bulk capacitance has been measured on sensors BZ4D at each wafers.

Series Pre-Series3 Series 3 Series 2 STD Series2 HPK Pre-Series3

Concentration [ion/cm^2]

2E12 4E12 1E13 1E13 2E12 P stop2E12 P spray

V full depletion -183V -292V -186V -252V -204V


CV Characteristics

11/15/2012

-400-20000

0.0004

0.000800000000000001

0.0012

0.0016ATLAS07 pre-Series 3

P stop 2E12 + P spray 2E12 BZ4D

W04 D

W05 D

W06 D

W10 D

Bias [V]

1/C^

2 [1

/Pf^

]̂

0.1 1 10 100 100018

23

28

ATLAS07 series 2nd HPKex Pstop 1E13 BZ4D

Vbias=-240V

W89 D

W91 D

W93 D

W97 D

Freq [kHz]

Capa

cita

nce

[pF]

Series Pre-Series3 Series 3 Series 2 STD Series2 HPK Pre-Series3

Concentration [ion/cm^2]

2E12 4E12 1E13 1E13 2E12 P stop2E12 P spray

V full depletion -183V -292V -186V*)

-252V -204V

*) Sensors BZ4A-D from wafer W75 of Series 2 STD have higher full depletion voltage, Vfd=286V

Bulk capacitance does not depend on testing frequency in range of 200Hz up to 20kHz


Interstrip Capacitance – non-irradiated

11/15/2012

0.1 1 10 100 10000

0.2

0.4

0.6

0.8Cinterstrip vs Frequency

W78-STD Pstop 1E13; W89-HPK Pstop 1E13;

W14-Pstop 2E12; W04-PstopSpray 2E12

W264-Pstop 4E12 W78 B

W89 B

W14 B

W04 B

W264 B

Frequency [kHz]

Cint

er [p

F]

-600-400-20000.5

0.6

0.7

0.8Interstrip Capacitance

p-stop 1E13 ion/cm^2, Series 2 STD & HPK

W78 A

W78 B

W78 C

W78 D

W89 A

W89 B

W89 C

W89 D

Bias [V]

Cint

erst

rip [p

F]

Vfd

-600-400-20000.2

0.4

0.6

0.8

1

1.2 Interstrip CapacitanceATLAS07 pre-Series3 p-stop&spray

2E12ion/cm^2W14 A

W14 B

W14 C

W14 D

W04 A

W04 B

W04 C

W04 D

Bias [V]

Cint

er [p

F]

Vfd

Interstrip capacitance is measured by 3 probes.

C interstrip depends strongly on frequency.Capacitance is measured at 1MHz

For Vbias<Vfd the values of C interstrip depend on the P-stop & P-spray ion concentration . After irradiation Cinterstrip is a constant without any structure for low bias voltage.(J.B., RD50,Liverpool)There is narrow deep minimum of Cint at Vbias =-4V for P-stop+P-spray isolation.


-600-400-20000.2

0.4

0.6

0.8

1

1.2Inter-strip Capacitance

ATLAS07 Series2, pre-Series3 & Series3W89 AW89 BW89 CW89 DW14 AW14 BW14 CW14 DW04 AW04 BW04 CW04 DW264 AW264 BW264 CW264 DW78 AW78 BW78 CW78 DReverse Bias [V]

Cint

er [p

F]

The inter-strip capacitance, Cint, is constant for bias voltages higher than respective full depletion voltages and Cint does not depend in this region on an ion concentration andthe punch through protection structures within ±20fF.Possible time dependence of Cint and an influence of relative humidity is in progress.


Interstrip Resistance - non-irradiated

11/15/2012

0E+00 2E+12 4E+12 6E+12 8E+12 1E+130

200

400

600

800BZ4A 300V

BZ4B 300V

BZ4C 300V

BZ4D 300V

BZ4A 100V

BZ4B 100V

BZ4C 100V

BZ4D 100V

BZ4A 50V

BZ4B 50V

BZ4C 50V

BZ4D 50V

P-stop ion concentration/cm^2

Resis

tanc

e [G

Ω]

Rbias

Bias ring

AC pad

DC pad

VV

I

Rint = 2*dV/dI measured at Vbias=-50V, -100V and -300V

Interstrip resistance increases with P-stop ion concentration from 4E12ion/cm^2 up to 1E13 ion/cm^2

Interstrip resistance is decreasing with increasing fluencyK.Hara et al: Nucl.Instrum.Meth. A636 (2011) S83-S89

PT structures


Punch Through Protection Structures

11/15/2012

A protection of AC coupling capacitors against the beam splashes should ensure special structures, BZ4A,B,C on the HPK ATLAS07 mini-sensors.A beam splash generates a spike of voltage across the AC coupling insulator.When the distance between the bias rail and the n-strip implants is appropriate,this voltage between the bias rail and the n-strip implant ends can be limited. This distance is 20 µ and is used in all special structures BZ4A,B,C and sensor BZ4D

Sensor BZ4D has no special structure and it is used for comparison with structures BZ4A, B and C.

Punch Through Protection Structures

Reff=dVtest/dItest, where Vtest is an applied voltage (Uappl) to DC pad and Itest is an current between DC pad and the bias ring. Rpt is supposed to be parallel to Rbias: 1/Reff=1/Rbias+1/Rpt.

BiasRing

Itest

Punch-Through Voltage is the Test Voltage for Rbias=Rpt, i.e. for Reff=Rbias/2.PT voltage is evaluated at bias voltages 100, 300, 500, 700 and 900V for PT structures Z4A-D

R implant

DC pad NEAR END Vtest

DC pad FAR END

n+ implant

PT structure Rpt

RbiasDC method S.Lindgren et.al NIM A636(2011)S111-S11&

-50 -30 -10 100

0.4

0.8

1.2

ATLAS07 Series 3 P-stop 4E12 ion/cm^2W264 BZ4B P10

Vb -100VVb -300VVb -500VVb -700VVb -900V

Vtest [V]

Reff

[MΩ

]

-70 -50 -30 -10 100

0.4

0.8

1.2

1.6

ATLAS07 Series 2HPK P-stop 1E13 ion/cm^2W89 BZ4A P04

Vb -100V

Vb -300V

Vb -500V

Vb -700V

Vb -900V

Vtest [V]

Reff

[MΩ

]

11/15/2012


Punch Through Protection Structures - Rpt

11/15/2012

-70 -50 -30 -100

0.4

0.8

1.2

1.6 ATLAS07 Series 2 P-stop 1E13 ion/cm^2W89 BZ4A-D NEAR END

BZ4ABZ4BBZ4DBZ4C

Vtest [V]

Reff

[MΩ

]

-800000 -600000 -400000 -200000 00.01

0.1

1

10 Rpt vs ItestW89 Series 2 P-stop 1E13 ion/cm^2

Vbias=-300V

BZ4DBZ4CBZ4BBZ4A

Itest [nA]

Rpt [

MΩ

]

-50 -30 -10 100

0.4

0.8

1.2ATLAS07 Series3 Pstop 4E12

W264 BZ4C P16 NEAR END

Vb -100VVb -300VVb -500VVb -700VVb -900V

Vtest [V]

Reff

[MΩ

]

Calculated Rpt‘s as a function of Itest for the same structure, BZ4C, and different bias voltages are the same contrary to Rpt’s evaluated for different PT structures but for the same bias voltagewhich show different dependences. Structure BZ4A is very effective at high current.

Vbias=-300V

-400000 -200000 00.01

0.1

1

10W264 Series3 BZ4C 4E12 ion/cm^2

Vb -100VVb -500VVb -900VW264 CVb -700V

Itest [nA]PT

resis

tanc

e Rp

t [m

Ω]


Punch Through Protection Structures - Rpt

11/15/2012

-600000 -400000 -200000 00.01

0.1

1

10 Rpt vs ItestPre-Series3 P-stop 2E12

ion/cm^2

W14 BZ4A

W14 BZ4B

W14 BZ4C

W14 BZ4D

Itest [nA]

Rpt [

MΩ

]

-800000 -600000 -400000 -200000 00.01

0.1

1

10 Rpt vs ItestW89 Series 2 P-stop 1E13 ion/cm^2

Vbias=-300V

BZ4DBZ4CBZ4BBZ4A

Itest [nA]

Rpt [

MΩ

]

-800000 -600000 -400000 -200000 00.01

0.1

1

10 Rpt vs ItestSeries3 P-stop 4E12 ion/cm^2

W281 A

W264 B

W281 D

W264 C

Itest [nA]

Rpt [

MΩ

]

Structure BZ4A seems to be the most effective short at low currents : -8µA, --18µA and -26µA for all P-stop ion concentrations: 2E12, 4E12 and 1E13 ion/cm^2 , respectively.

Non-irradiated

-400000 -200000 00.01

0.1

1

10 Rpt vs Itest pre-Ser3 PstopPspray

2E12ion/cm^2NEAR END

W04 BZ4B

W04 BZ4A

W04 BZ4C

W04 BZ4D

Itest [nA]

Rpt [

MΩ

]


-110000 -100000 -90000 -80000 -70000 -60000 -50000 -400000.01

0.1

1

10

Rpt vs ItestPstop 4E12 ion/cm^2

W281A2E15

W281B2E15

W281C2E15

W281D2E15

Itest [nA]

Rpt [

MΩ

]

-200000 -160000 -120000 -80000 -40000 00.01

0.1

1

10Rpt vs ItestPstop 4E12ion/cm^2

W278A4E14

W278D4E14

W278C4E14

W278B4E14

Itest [nA]

Rpt [

MΩ

]

-100000 -90000 -80000 -70000 -60000 -50000 -400000.01

0.1

1

10


W19A2E15

W19B2E15

W19C2E15

W19D2E15

Itest [nA]

Rpt [

MΩ

]

-120000 -80000 -40000 00.01

0.1

1

10


W17A4E14

W17B4E14

W17C4E14

W17D4E14

Itest [nA]

Rpt [

MΩ

]

Punch Through Protection Structures - RptNeutron irradiation


Punch Through Voltagenon-irradiated

11/15/2012

-900-700-500-300-100

-40

-20

0

W89-HPK Pstop 1E13; W14-Pstop 2E12;

W281&W264-Pstop 4E12W04-Pstop+Pspray 2E12

W89 Z4AW89 Z4BW89 Z4CW89 Z4DW14 Z4AW14 Z4BW14 Z4CW14 Z4DW281 Z4AW264 Z4BW264 Z4CW281 Z4DW04 Z4A

Bias [V]

PT V

olta

ge [V

]

FAR END-900-700-500-300-100

-40

-20

0NEAR END

W89 C

W89 A

W89 B

W89 D

W14 A

W14 B

W14 C

W14 D

W281 A

W264 B

W264 C

W281 D

Bias [V]

PT V

olta

ge [V

]

1e13 ion/cm^2

4E12 ion/cm^2

2E12 ion/cm^2

P-stop+P-spray 2E12 ion/cm^2

-Punch through voltage dominantly depends on P-stop ion concentration for all punch through structures.-PT voltage for P-stop+P-spray isolation is considerable higher than for P-stop isolation at same p-dose 2E12 ion/cm^2-Differences among PT voltages for each structure BZ4A-D are small for all concentrations, several volts only-PT voltage increases with applied bias, for concentration 1E13 ion/cm^2 is observed nearly saturation for Vb>500V.-PT voltages are smaller than 50V, i.e. they are significantly below the hold-off voltages of the coupling capacitor which are typically tested to 100V.There is practically no difference (1-2 V only) of PT voltages measured on FAR END and NEAR END.


-1000-800-600-400-2000

-60

-40

-20

0

Punch-Through VoltageATLAS07 Pstop 4E12 ion/cm^2 W281 A 2E15

W281 B 2E15W281 C 2E15W281 D 2E15W278 A 4E14W278 B 4E14W278 C 4E14W278 D 4E14W281A nonirrW264B nonirrW264C nonirrW281D nonirr

Bias [V]

PT V

olta

ge [V

]

-1000-800-600-400-2000

-60

-40

-20

Punch-Through VoltageATLAS07 Pstop 1E13 ion/cm^2

W93 A 2E15W93 B 2E15W93 C 2E15W93 D 2E15W91 A 4E14W91 B 4E14W91 C 4E14W91 D 4E14W89 A nonirrBias [V]

PT V

olta

ge [V

]

-1000-800-600-400-2000

-60

-40

-20

0

Punch-Through VoltageATLAS07 Pstop 2E12 ion/cm^2 W19A 2E15

W19B 2E15W19C 2E15W19D 2E15W17A 4E14W17B 4E14W17C 4E14W17D 4E14W14A nonirrW14B nonirrW14C nonirrW14D nonirr

Bias [V]

PT V

olta

ge [V

]

-PT voltage increases with fluency and ion concentration

-At high fluency 2E15 neq/cm^2 and all tested ion concentrations the superiority belongs to the structure BZ4A with suppressed PTV with respect to structures BZ4B and BZ4C. BZ4D without any special structure reaches highest PT voltages.

-PT voltages for P-stop ion concentration 1E13 ion/cm^2 exceeds safety level of 50V even for BZ4A and fluency 4E14 neq/cm^2 and therefore concentration 1E13 ion/cm^2 is not suited to the protection against beam splashes

Punch Through Voltage irradiated

-At fluency about 4E14 neq/cm^2 and lower, an efficiency of special structures diminishes


-1000-5000

-70

-50

-30

Punch-Through VoltageATLAS07 PTP BZ4A and BZ4D fluence 2E15

neq/cm^2

W93 A Pst 1E13

W93 D Pst 1E13

W281A Pst 4E12

W281D Pst 4E12

W19 A Pst 2E12

W19 D Pst 2E12

Bias [V]

PT V

olta

ge [V

]

0E+00 2E+12 4E+12 6E+12 8E+12 1E+13 1E+13

-60

-40

-20

PT Voltage vs P-stop concentrationBZ4A 4E14

BZ4B 4E14

BZ4C 4E14

BZ4D 4E14

BZ4A 2E15

BZ4B 2E15

BZ4C 2E15

BZ4D 2E15

P-stop concentration [ion/cm^2]

PT V

olta

ge [V

]

A comparison of PT voltages measured onspecial structure BZ4A with “no structure” BZ4D for various ion concentration at fluency 2E15 neq/cm^2.

PT voltage dependence on the P-stop ion concentration has shown a small differencebetween 2E12 and 4E12 ion/cm^2 and alsofor some structures (A and D) the PTV hasminimum at 4E12ion/cm^2.

Since one can expect for higher p-stop dose the higher inter-strip resistance,the 4E12 ion concentration is preferable.(Rint will be measured soon).


Summary

11/15/2012

Non-irradiated sensors ATLAS07 with p-stop isolation and with different ion concentrations were successfully operating up to 1000V, no onset of micro-discharges was observed.On other side, irradiated sensors to fluency 4E14 neq/cm^2 behave differently and an onset of breakdowns is observed above already Vbias ~800V. For higher fluency, 2E15 neq/cm^2, no micro-discharges were found.

Punch through voltage dominantly depends on the P-stop ion concentration for all punch through structures, irradiated and non-irradiated samples and PTV increases with fluency, p-dose and applied bias.

PT voltages for P-stop ion concentration 1E13 ion/cm^2 exceeds safety level of 50V even for BZ4A and fluency 4E14 neq/cm^2 and therefore concentration 1E13 ion/cm^2 is not suited to the protection against beam splashes

At high fluency 2E15 neq/cm^2 and all tested ion concentrations the superiority belongs to the structure BZ4A with suppressed PTV with respect to structures BZ4B and BZ4C. The BZ4D without any special structure reaches highest PT voltages.

Protection structure BZ4A made with P-stop concentration of 4E12ion/cm^2 ensures that PTV will be smaller than 50V, (i.e. significantly below the hold-off voltage of the coupling capacitor -typically ~100V), for fluency up to 2E15neq/cm^2.


Interstrip Capacitance - Method of measurement

11/15/2012

0 100 200 300 400 500 6000.600000000000001

0.800000000000001

1

1.2

1.4

1.6

1.8

2

2.2

Cinter CpRp 100kHz Sensor W37

Vbias [-V]

Cint

[pF

]

2 probes

5 probes GND

3 probes5probes

2-probes3-probes

5-probes

LCR High

DC pad

LCR Low

Isolated strips to GND

Cint(5-pr)/Cint(3-pr)=0.939 and 0.913 for 100kHz and 1MHz, respect.Cint(2-pr)/Cint(5-pr)=0.57

AC pad

J.Bohm, M.Mikestikova et.al, NIM A636 (2011)S104-S110


Interstrip Capacitancenon-irradiated

11/15/2012

Wafer W14 W264 W78 W89 W04

Series Pre-Ser3 Series3 Series2 STD Series2 HPK Pstop Pspray

Ion/cm^2 2E12 4E12 1E13 1E13 2E12

Vfd [V] -183 -292 -186 -252 -186

Cint BZ4A pF 0.69 0.66 0.68 0.69 0.71

Cint BZ4B pF 0.68 0.67 0.68 0.68 0.71

Cint BZ4C pF 0.68 0.67 0.68 0.68 0.71

Cint BZ4D pF 0.71 0.66 0.68 0.69 0.70

Interstrip capacitance in this table was evaluated for Vbias=Vfd+10V

The inter-strip capacitance, Cint, is constant for bias voltages higher than respective full depletion voltages and Cint does not depend in this region on an ion concentration andthe punch through protection structures within ±20fF.Possible time dependence of Cint and an influence of relative humidity is in progress.

punch through protection of heavily irradiated atlas07 mini- sensors . status report

Documents

floating pimplant p

suitable p

p hpk miniature

cernall sensors

cernmeasured sensors

pspray isolation

sensors bz4ad

pspray separation