Project and Thesis Folder 2019

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Pillars of the Institute for MicroelectronicsTeaching Programming in CSimulation Simulation of semiconductor devices and processesExperimental Development of measurementcharacterization equipment

Unique chance to improve teaching quality and scientific research

Optional seminars and practical courses360238 Experimental Device Characterization in Microelectronics360206 Programming

Bachelor ThesisMaster Thesis

Numerical Solvers for Diffusion Equations (using Python)

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

One crucial challenge in the production of high aspect ratio (HAR) structures is the depletion of etchantdepositant species at the bottomAn approach to model neutral species (eg ALD precursors) is Knudsen diffusionWhen the Knudsen approach is extended to take into account arbitrary geometries we encounter a system of coupled ODEs

TasksImplement a framework to test different ODE system solversInvestigate the impact of each computational methodCompare to available Monte Carlo and radiosity models

Required knowledgeNumerical methods for ODE (Runge-Kutta Euler hellip)Experience with PythonSciPy is a plusFamiliarity with semiconductor processing is NOT necessary

Supervisor

Luiz Felipe AguinskyContact

aguinskyiuetuwienacat01-58801-36057

Project LA1

Numerical Solvers for Diffusion Equations (using Python)

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

One crucial challenge in the production of high aspect ratio (HAR) structures is the depletion of etchantdepositant species at the bottomAn approach to model neutral species (eg ALD precursors) is Knudsen diffusionWhen the Knudsen approach is extended to take into account arbitrary geometries we encounter a system of coupled ODEs

TasksImplement a framework to test different ODE system solversInvestigate the impact of each computational methodCompare to available Monte Carlo and radiosity models

Required knowledgeNumerical methods for ODE (Runge-Kutta Euler hellip)Experience with PythonSciPy is a plusFamiliarity with semiconductor processing is NOT necessary

Supervisor

Luiz Felipe AguinskyContact

aguinskyiuetuwienacat01-58801-36057

Project LA1

GPU Ray Tracing for Non-Visualization Applications

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Supervisor

Luiz Felipe AguinskyPaul ManstettenContact

aguinskyiuetuwienacat01-58801-36057

Project LAPM1

Computer graphics applications take advantage of specialized hardware (GPUs)The idea is to use this hardware to speed up certain computational tasks in semiconductor process simulations flux and visibility calculationsGPU ray tracing can potentially be used for top-down calculations which are particularly relevant for ion transport in plasma processing

TasksDevelop a sample model for flux calculation using Nvidia GVDBEvaluate its performance on different Nvida GPUs

Required knowledgeProgramming in C++Familiarity with semiconductor processing is NOT necessary

Rasterization for Non-Visualization Applications

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Computer graphics applications take advantage of specialized hardware (GPUs)The idea is to use this hardware to speed up certain computational tasks in semiconductor process simulations flux and visibility calculationsRasterization can potentially be used for bottom-up calculations which are particularly relevant for neutral transport in semiconductor processing

TasksDevelop a simple model for direct flux calculations using OpenGL or VulkanEvaluate its performance on different GPUs

Required knowledgeProgramming in CC++Familiarity with semiconductor processing is NOT necessary

Supervisor

Luiz Felipe AguinskyPaul ManstettenContact

aguinskyiuetuwienacat01-58801-36057

Project LAPM2

Absence and Leave Management System

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Web-based holiday and absence planner application is desiredIt should be viewable and acccesible from everywhereAdapt to the existing design of the IuE hompageA standalone tool is desired

TasksImplement a simple leave management systemUser access rights should be made simplePrimary calendar view should be one monthResponsive design

Required knowledgeWebpage and database programmingHTML CSS PythonPerlJava (open source no restrictions)Some knowledge in graphic conceptualization and design desired

Supervisor

Johann CervenkaContact

cervenkaiuetuwienacat01-58801-36038

Project JC1

Modeling Stress in Thin Metal Films

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Modeling stress during metal growth gives insight into essential material propertiesCurrently 2D simulations are used but an extension to 3D is desired

TasksIntroduce 3D to an existing 2D codeUse VTK libraries to export the simulated structure

Required knowledgeProgramming in CC++Use of external C++ libraries (VTK toolkit)

Supervisor

Lado FilipovicContact

filipoviciuetuwienacat01-58801-36036

Project LF1

Modeling Changes in Metal Microstructure during Heating

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Metals change their structure during high temperature annealingSelf-heating can also lead to changes in the grain structureMicrostructure evolution can be simulated using the Potts model

TasksImplement the Potts model to simulate grain structure evolution at high temperatures

Required knowledgeProgramming in CC++Some knowledge in metal microstructure

Supervisor

Lado FilipovicContact

filipoviciuetuwienacat01-58801-36036

Project LF2

Web Interface GUI for a Metal Stress Simulator

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

We have a simulator which models the stress during metal growthThe simulator can handle a variety of metals and properties

TasksImplement a GUI interface for the simulatorAlternatively implement a web interface for the stress simulator

Required knowledgeProgramming in CC++Experience in one of

Web developmentPython andor Qt

Supervisor

Lado FilipovicContact

filipoviciuetuwienacat01-58801-36036

Project LF3

Modeling Electron Scattering in Copper Wires

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

We have a software tool written in C which tracks how electrons move in different materials such as silicon or copperThe software is currently a small part in a larger code framework but we want to make it an independent code

TasksImplement models for electron motion in CTest the model for various geometries

Required knowledgeProgramming in CSome knowledge in metal microstructure

Supervisor

Lado FilipovicContact

filipoviciuetuwienacat01-58801-36036

Project LF4

Hot ndash Carrier Degradation (HCD)

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Charge carriers in the channel can gain high kinetic energy and trigger the creation of defects at the SiSiO2 interfaceTo understand how carriers are distributed over energy (energy distribution function) a full solution of the Boltzmann transport equation is neededCombining a physics-based model and a state of the art device simulator enables us to gain insight into this degradation phenomenon

Possible TasksExperimental characterization(eg the variability different exp methods)Modeling of HCD related phenomenaDevelopment of physics ndash based model

Required knowledgeProgramming with PythonC++(Basic) knowledge of device simulationsInterest in physics

Supervisor

Markus JechContact

jechiuetuwienacat01-58801-36034

Project MJ1

Interplay of Degradation Mechanisms

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) are two major device reliability issuesHowever both degradation modes are generally described and characterized independentlyWe aim to understand and model the interplay between BTI and HCD

Possible TasksExperimental characterization(eg stress maps over bias space)(Improve) Modeling of degradation phenomena

Required knowledgeProgramming with C++Python(Basic) knowledge of device simulationsInterest in experimental work

Supervisor

Markus JechContact

jechiuetuwienacat01-58801-36034

Project MJ2

Atomistic Simulations

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Ab-initio simulations on an atomistic level are needed to identify the properties of defectsIn this context Density Functional Theory (DFT) is used to calculate eg the energetic position of defects activation energies

Possible TasksCharacterize realistic interface structures (eg SiSiO2)Characterize new and emerging technologies and materialsExplore new simulation approaches

Required knowledgeSolid knowledgeinterest in physicsPostprocessing data (bashpython)

Supervisor

Markus JechContact

jechiuetuwienacat01-58801-36034

Project MJ3

Simulation Framework

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Analysis of differential equation systems using numerical methods (eg spatial and time discretization schemes)

bull Simulation of semiconductor devicesbull Drift-diffusion modelbull Modeling of physical parameters

Possible Tasksbull Development a new simulation frameworkbull (preferable) Python based using existing libraries

Required knowledgeGood knowledge of device simulations (MEB)Programming with PythonInterest in numerics

Supervisor

Markus JechContact

jechiuetuwienacat01-58801-36034

Project MJ4

GUI for ViennaTS

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtA desktop GUI is still needed

TasksBuild a GUI for the simulator (QtPythonElectron)

Required knowledgeProgramming in C++Experience in web developementQt

Betreuer

Xaver KlemenschitsContact

klemenschitsiuetuwienacat01-58801-36026

Project XK1

Build a JSON parser for ViennaTS

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

ViennaTS is a process simulation tool used to model semiconductor fabrication stepsA web interface is currently being builtWeb technology relies on JSON formatted data

TasksRedesign the way information is passed to the simulator and implement a JSON based parameter input

Required knowledgeProgramming in C++

Betreuer

Xaver KlemenschitsContact

klemenschitsiuetuwienacat01-58801-36026

Project XK2

Cell based surface representation for ViennaTS

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

ViennaTS is a process simulation tool used to model semiconductor fabrication stepsMaterial interfaces are stored as level setsNo way of storing volume information

TasksImplement an additional cell based surface representation to save volume information when necessary

Required knowledgeAdvance knowledge in C++Experience with numerical surface descriptions

Betreuer

Xaver KlemenschitsContact

klemenschitsiuetuwienacat01-58801-36026

Project XK3

Modeling of MOSFETs based on 2D Materials

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Benchmarking of different approachesTCAD vs compact modelscattering dominated vs ballistic

Calibrate the models to measurement data

TasksSimulate transfer characteristics with 2 modelsCompare the simulation to measurement dataInterpret observed differences

Required knowledgeProgramming skills (Python)Profound physical understandingev Circuit modeling skills (HSPICE Verilog-A)

Supervisor

Theresia KnoblochContact

knoblochiuetuwienacat01-58801-36059

Project TK1

3D Printing of FET Models

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Drawing 3D models of a FinFET in a CAD-toolDisassemble the model into individual components

parts should form a 3D puzzle

3D Printing of the components

TasksDraw a 3D CAD model3D Printing of the puzzle componentsUser manual for didactic purposes

Required knowledge3D Modeling experience (FreeCAD Blender )ev Experience with 3D printing

Supervisor

Theresia KnoblochContact

knoblochiuetuwienacat01-58801-36059

Project TK2

Domain Decomposition for Parallel Velocity Extension

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

In process TCAD interfaces are tracked using the level-set methodA crucial step for the level-set method is the extension of the interface velocity to a narrow-band around the interfaceA parallel algorithm on a hierarchical grid has been implemented for shared memory systems

TasksImplement a new parallelization based on mesh decomposition adaptive load balancing in the given C++ frameworkCompare it to the existing parallelization

Required knowledgeProgramming in C++ under GNULinuxOPENMP Parallel programming

Supervisor

Michael QuellContact

quelliuetuwienacat01-58801-36018

Project MQ1

Dopant Diffusion in Process TCAD

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Control of doped regions is critical for every semiconductor deviceDopants diffuse during implantation and annealing process steps prohibiting sharp doping profilesCoupling process and device TCAD (technology computer-aided design) provides the tools to predict the device characteristics of the final device

TasksModeling dopant diffusion in lsquohotlsquo materials such as GaN AlGaN InP and SiGeExtending the diffusion framework of the commercial Silvaco Victory Process simulatorProcess and device Simulations of power and optoelectronic devices

Required knowledgeProgramming in CC++ PythonInterest in solid state physics andor semiconductor process and device engineering

Supervisor

Alexander ToiflContact

toifliuetuwienacat01-58801-36067

Project AT1

Atomistic Modeling Interaction of Oxide Defects with Electric Fields

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Oxide defects in MOSFET devices can act as charge trapping sites causing various reliability issues like the Bias Temperature Instability (BTI)

In our current BTI models the electric field across the gate oxide only affects the charge trapping levels of the defectHowever the electric field can also interact with the charge distribution of the defect and potentially alter transition barriers between different defect statesDensity Functional Theory (DFT) allows us to simulate individual defects at an atomistic level and quantify these effects theoretically

TasksUse DFT to investigate the impact of electric fields on defecttransition barriers due to dipole interactionDeduce a simplified model from your results which can be used indevice simulators

Required knowledgeSolid understanding of electrodynamics and quantum mechanicsLinux Programming in Python

Supervisor

Dominic WaldhoerContact

waldhoeriuetuwienacat01-58801-36055

Project DW1

Atomistic Modeling Extending the 4-State Defect Model

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN) are caused by oxide defects which can trapemit electric charges fromto the device substrateThese defects are usually described by a 4-state Markov chainAlthough this 4-state model accounts for many experimental findings it cannot explain certain observed defect behaviors like volatility or double captureemission eventsDensity Functional Theory (DFT) is an invaluable tool for the atomistic modeling of defects DFT can be used to search for additional defect states and predict how these new states change the observable defect behavior

TasksUse DFT to identify possible defect states which can account fordefect volatility andor double captureemission eventsInclude these states in a Markov chain model and simulate theresulting RTN signals

Required knowledgeSolid understanding of physicsLinux Programming in Python

Supervisor

Dominic WaldhoerContact

waldhoeriuetuwienacat01-58801-36055

Project DW2

Web Interface to Control Defect Probing Instruments for Transistor Single-Defect Spectroscopy

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Electrical characterization of single defects in MOSFETsUse Defect Probing Instrument (right) developed at IuEMeasurement sequences controlled by jobserverJobserver communicates with SQL database

TasksDevelop a web interface in Python (Django)Control of measurement flowConfiguration of measurement toolLive tracking of measurement data

RequirementsBasic knowledge of PythonHandling of UNIX operating system

Supervisor

Michael WaltlContact

waltliuetuwienacat01-58801-36050

Project MW1

Hardware- and Software Development for Defect Probing Instrument

Institute for Microelectronics ndash TU WienGuszlighausstraszlige 27-29E360 1040 Vienna Austria

Electrical characterization of single defects in MOSFETsDefect Probing Instrument (right) developed at IuECommunicates with measurement host via USB interface

TasksDevelopment of a calibration tool for DPIDevelopment of a switching matrixFemto-ampere measurementsStepping motor controller and autofocusEnhancement of current control modulApplication of zoom-and-scan method for single defect spectroscopyDriver development for general purpose measurement instruments (wafer prober Keithleys etc)

RequirementsKnowledge of programming languages CC++ and PythonProfound knowledge of hardware development and PCB design

Supervisor

Michael WaltlContact

waltliuetuwienacat01-58801-36050

Project MW2