product / process change notice - mouser electronics · 2020. 1. 22. · the above information is...
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The above information is the exclusive intellectual property of Winbond Electronics and shall not be disclosed, distributed or reproduced without permission from Winbond.
Table No.: 1110-0001-08-A
Product / Process Change Notice
No.: Z200-PCN-DM201912-06-A Date: December 30, 2019
Change Title : W74M64JV 3.3V Authentication Flash to replace W74M64FV 3.3V Authentication Flash Memories
Change Classification: Major Minor with customer notification Minor without customer notification Change item : Design Raw Material Wafer FAB Assembly Testing Packing Others
Affected Product(s) :
W74M64FVSSIQ
Description of Change(s)
W74M64JV 3.3V Authentication Flash Memories is using Winbond 58nm Flash technology, It is function-compatible with W74M64FV 3.3V Authentication devices and offering improved performance, features and availability.
1. Individual Block/Sector array protection.
2. Special OTP protection. (Please refer the W74M64JV Authentication datasheet)
Reason for Change(s) :
1. W74M64FV Authentication EOL. (Please refer to attachment IV for details)
2. New generation features improvement and Command backward compatible. (Please refer to attachment I comparison table)
Impact of Change(s) : ( positive & negative )
Form : No Change
Fit : No Change
Function : No Concern (Please refer to attachment I)
Reliability : No Concern (Please refer to attachment II)
Hazardous Substances: No Concern (Please refer to attachment III)
Qualification Plan/ Results :
Based on Winbond W74M Reliability report, the new product meets our criteria and no quality concern (refer to Attachment II in details)
Implementation Plan :
Please refer to attachment IV for details.
Date Code: onward Lot No: onward Proposed first ship date: Please refer to attachment IV.
Originator: (QA)
Approval: (QA Dept. Manager)
Approval: (QRA Director)
The above information is the exclusive intellectual property of Winbond Electronics and shall not be disclosed, distributed or reproduced without permission from Winbond.
Table No.: 1110-0001-08-A
Contact for Questions & Concerns
Name: Betty Huang TEL:886-3-5678168 (ext.76549) FAX: 886-3-5796124
Address : No. 8,Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881,Taiwan
E-mail: [email protected]
Customer Comments: Note: Please sign this notice, and return to Winbond contact within 30 days. If no response is received within 30 days, this Change Request will be assumed to meet your approval.
Major change: Approval Disapproval Conditional Approval : .
Minor change with customer notification: Recognition
Minor change without customer notification: Approval Disapproval
Conditional Approval :
Comment:
Date:
Dept. name:
Person in charge:
Table No. : 1260-0009-02-A
Winbond Electronics Corporation 6F., No.38, Gaotie 1st Rd., Jhubei City,
Hsinchu County 30273, Taiwan R.O.C.
Product Obsolescence Notice
W74M64FV 3.3V Authentication Memories Notification Date: January 03, 2020
Dear Valued Customer,
This letter is to notify you of Winbond’s intention to terminate production of the W74M64FV 3.3V Authentication memory, and replace it with the W74M64JV 3.3V Authentication Flash. Replacement part number is listed below:
Winbond Current PN
(58nm F-Series)
Winbond Primary Replacement PN (58nm J-Series)
W74M64FVSSIQ W74M64JVSSIQ
The W74M64JV 3.3V Authentication device features:
Features
a) Command backward compatible with W74M64JV 3.3V Authentication Flash
b) Clock operation up to 104MHz, SPI with Single / Dual / Quad / QPI
c) Individual Block/Sector array protection
Please refer to the table below for your particular product last time order date and Winbond last shipment date and use this table to determine your last time buys and subsequent request dates. Winbond Electronics reserves the right to limit last time buy quantities based on capacity and material availability. Please notify Winbond as soon as possible if there are any concerns with these this schedule.
Part
Number
Notification
Date
Last Order
Date
Last Ship
Date
Part
Number
Reliability
Report
Mass
Production
W74M64FV Jan./03/
2020
Jul./03/
2020
Jan./03/
2021 W74M64JV
Sep./20
2019
Oct./30/
2019
Jooweon (JW) Park
Technology Executive of Flash Marketing
Table No. : 1260-0009-02-A
Hazardous Substances Check List
Raw material name: W74M64JVSSIQ
Element Specification Measured Data DL Result
Cd
(Cadmium, 鎘) <20ppm ND 0.8 PASS
Pb
(Lead, 鉛) <700ppm ND 0.4 PASS
Hg (Mercury, 汞) <200ppm ND 0.4 PASS
Cr
(Chromium, 鉻) <700ppm 13ppm 0.8 PASS
Br
(Bromine,溴) <250ppm ND 0.1 PASS
Cl
(Chlorine, 氯) <630ppm ND 15 PASS
Sb
(Antimony, 銻) <700ppm ND 2.5 PASS
註: DL 為儀器之有效偵測極限,量測值< DL,則標示ND。
Conclusion : Accept Reject
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL,
W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
-1- Reliability Engineering Department
PART NO. : W74M12FV
FUNCTION: Secure Authentication FLASH
PROCESS: 90nm CMOS (DPTM)
RA ENGINEER :
RA MANAGER :
RELIABILITY REPORT
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV, W74M16DV, W74M80DV, W74M40CL,
W74M25JV, W74M12JV, W74M64JV
W74M25JV, W74M12JV, W74M64JV
W74M20CL
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL,
W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 2 - Reliability Engineering Department
~SUMMARY~
W74M12FV for 8-SOP 208 mil passed the reliability items
as follows:
. Early Life Fail Rate : 0/3000 pcs
. High Temp. Operating Life test : 0/231 pcs
. ESD-HBM : 0/36 pcs
. ESD-CDM : 0/9 pcs
. Latch -Up Test : 0/18 pcs
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL,
W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 3 - Reliability Engineering Department
---CONTENTS---
Ⅰ. PRODUCT DESCRIPTION
A. Introduction
B. Features
C. Function Block
Ⅱ. LIFE TEST
A. Introduction
1. Early Life Fail Rate (ELFR)
2. High Temp. Operating Life Test (HTOL)
B. Test Results
1. Early Life Fail Rate(ELFR)
2. High Temp. Operating Life Test (HTOL)
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL,
W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 4 - Reliability Engineering Department
Ⅲ. ESD & LATCH-UP
A. Introduction
1. ESD
2. LATCH-UP
B. Test Results
1. ESD
2. LATCH-UP
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL,
W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 5 - Reliability Engineering Department
I. PRODUCT DESCRIPTION
A. Introduction
The W74M12FV (128M-bit) Serial Flash memory provides a storage
solution for systems with limited space, pins and power. The W74M series
offers flexibility and performance well beyond ordinary Serial Flash
devices. They are ideal for code shadowing to RAM, executing code
directly from Dual/Quad SPI (XIP) and storing voice, text and data. The
device operates on a single 2.7V to 3.6V power supply with current
consumption as low as 4mA active and 1μA for power-down. All devices
are offered in space-saving packages.
The W74M12FV support the standard Serial Peripheral Interface (SPI),
Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2, and I/O3. SPI clock frequencies of up to 104MHz are
supported allowing equivalent clock rates of 208MHz (104MHz x 2) for
Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast
Read Dual/Quad I/O instructions. These transfer rates can outperform
standard Asynchronous 8 and 16-bit Parallel Flash memories.
The device supports JEDEC standard manufacturer and device ID and
SFDP Register, a 64-bit Unique Serial Number and three 256-bytes
Security Registers.
The W74M series is also equipped with an enhanced authentication
security feature by Monotonic Counter (MC). It provides a high level
secured communication between the flash device and the controller to
reduce the system vulnerabilities to hardware attacks.
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL,
W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 7 - Reliability Engineering Department
B. Features
New Family of SpiFlash Memories
– W74M12FV: 128M-bit / 16M-byte
– Standard SPI: CLK, /CS, DI(IO0), DO(IO1)
– Dual SPI: CLK, /CS, IO0, IO1
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– Software & Hardware Reset
Highest Performance Serial Flash
– 104MHz Single, Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– More than 100,000 erase/program cycles
– More than 20-year data retention
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, <1μA Power-down (typ.)
– -40°C to +85°C operating range
Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4K/32K/64K-Byte)
– Program 1 to 256 byte per programmable page
– Erase/Program Suspend & Resume
Advanced Security Features
– Software and Hardware Write-Protect
– Power Supply Lock-Down and OTP protection
– Top/Bottom, Complement array protection
– Individual Block/Sector array protection
– 64-Bit Unique ID for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Bytes Security Registers with OTP locks
– Monotonic Counters (MC)
– Volatile & Non-volatile Status Register Bits
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL, W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 7 - Reliability Engineering Department
Space Efficient Packaging
– 8-pin SOIC / VSOP 208-mil
– 8-pin PDIP 300-mil
– 8-pad WSON 6x5-mm / 8x6-mm
– 16-pin SOIC 300-mil (additional /RESET pin)
– 24-ball TFBGA 8x6-mm
– Contact Winbond for KGD and other options
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL, W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 8 - Reliability Engineering Department
C. Function Block
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL, W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 9 - Reliability Engineering Department
II. LIFE TEST
A. Introduction
1. Early Life Fail Rate (ELFR)
1.1 SCOPE
ELFR test is performed to accelerate infant mortality failure
mechanisms which are thermally activated. This can be achieved by
stressing the devices with bias at high temperature.
1.2 TEST CONDITION
Temp ambient = 125C, Vdd = 3.6V, dynamic stressing, Td = 168 hrs.
(JEDEC74)
2. High-Temperature Operating Life Test (HTOL)
2.1 SCOPE
HTOL test is performed to accelerate failure mechanisms which are
thermally activated. This can be achieved by stressing the devices
with bias at high temperature.
2.2 TEST CONDITION
Temp ambient = 125C, Vdd = 3.6V, dynamic stressing, Td = 1000 hrs.
(JESD22-A108)
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL, W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 10 - Reliability Engineering Department
B. Test Results
1. Early Life Fail Rate (ELFR)
RUN Lot No 168 Hrs Remark
#1 E337M0004 0/1000
#2 E337M0003 0/1000
#3 E339M0001 0/1000
2. High-Temperature Operating Life Test (HTOL)
2.1 SUMMARY TABLE
RUN Lot No 500 Hrs 1000 Hrs Remark
#1 E337M0004 0/77 0/77
#2 E337M0003 0/77 0/77
#3 E339M0001 0/77 0/77
*Criteria : Acc/Rej = 0/1
2.2 FAILURE RATE CALCULATION
WHERE : CHI-SQUARE Function CL: Confidence Level
N : No of Failures EDH: Equivalent Device Hour
F R TCL N
EDH
X. .( )( , )
21 2 2
2
2
X
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL, W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 11 - Reliability Engineering Department
Test
Item
Dev. Hours
at
Tj=126.1C
Equiv. Dev.
Hours at
Tj=55C
No. of
Failure
Failure
Rate
at 55C
HTOL 231000 208944577 0
4.39
FIT
Based on CL = 60% and Activation Energy = 1.08 eV
Tj Ta Pd ja
Where: Tj= junction temp, Ta=125℃ (ambient temp)
Pd=15.12mW (power dissipated on the device)
Θja=77.8℃/W (thermal resistance from junction to ambient)
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL, W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 12 - Reliability Engineering Department
III. ESD AND LATCH-UP
A. Introduction
1. ESD
1.1 SCOPE
ESD test is to evaluate the immunity of device to electrostatic
discharge.
1.2 TEST CONDITION
Human Body Model (HBM): JS-001
Charge Device Model (CDM): JS-002
2. Latch-Up
2.1 SCOPE
Latch-Up test is to evaluate the immunity of the devices to latch-up.
2.2 TEST CONDITION
JEDEC STD 78, Temp = 25 C, VDD = Max. Operating Voltage
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL, W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 13 - Reliability Engineering Department
B. Test Results
1. ESD
1.1 Human Body Model
Run LOT# POSITIVE NEGATIVE Remark
#1 E337M0004 0/6 0/6
#2 E337M0003 0/6 0/6
#3 E339M0001 0/6 0/6
*Criteria : Acc/Rej = 0/1.
*| SPEC | : >2KV
1.2. Charge Device Model
Run LOT# POSITIVE / NEGATIVE Remark
#1 E337M0004 0/3
#2 E337M0003 0/3
#3 E339M0001 0/3
*Criteria : Acc/Rej = 0/1.
*| SPEC | : >750V
2. Latch-Up
Run LOT# POSITIVE NEGATIVE Remark
#1 E337M0004 0/3 0/3
#2 E337M0003 0/3 0/3
#3 E339M0001 0/3 0/3
*Criteria : Acc/Rej = 0/1.
W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL, W74M20CL, W74M25JV, W74M12JV, W74M64JV
Publication Release Date: 9/11/2019
- 14 - Reliability Engineering Department
*| SPEC. | : I-Test > 200mA
Vsupply over voltage Test>1.5x max supply voltage
A Global Supplier of Advanced Memory Solutions
Comparison table
(W74M64FV vs W74M64JV)
Comparison table
2Oct. 2019
Oct. 2019 3