Yeon-Ho Im

Email : yeonhoim@jbnu.ac.kr

Predictable Modeling for Surface Interactions of Semiconductor and

Display Plasma processes

ICM

AP2018

Introductiontoheterogeneousprocessatplasma-surfaceinterfaces

Semiconductorresearchfields

임베디드뉴스

대Analyst 이세철(6309-4523)‘무어의 법칙’의 재구성 : 반도체 구조/공정변화 반도체

(Overweight)

메리츠종금증권 리서치센터 33

[그림 42] 도시바 Piped-BiCS

자료: Website , 메리츠종금증권 리서치센터

[그림 43] 삼성전자 TCAT

자료: Website , 메리츠종금증권 리서치센터

SemiconductorresearchfieldsHeterogeneous process at plasma-surface interfacesSemiconductor research fields – NAND Flash

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ICM

AP2018

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Bottleneck for the predictable plasma process simulationCurrent research status

• Even if the composition and energy of the species impacting the surface were known exactly, the way they combine with the surface to create the observed effects is not generally understood.

• This is hardly surprising given the obvious fact that the effects of the impacting species occur at surfaces immersed in the complex plasma environment, and that these surfaces are often difficult to probe in situ and in real time.

• Some molecular dynamics (MD) simulations follow the detailed motion of sets of interacting atoms through integration of atomic equations of motion, using inter-atomic potentials that can account for bond breaking and formation that result when energetic species from the plasma impact surfaces.

• The primary limitations of MD are the relatively small number of atoms that can be simulated for relatively short times and the approximations associated with inter-atomic potential

Sideview illustration of Si etch with fluorocarbon neutrals and argon ions under conditions that a fluorocarbon film forms on the surface. (a) initial Si layer; (b) steady state layer during etch, showing fluorocarbon (FC) film above the Si–C and Si–F layers

Vegh J J 2007 Molecular dynamics simulations of plasma–surface interactions PhD Thesis University of California, BerkeleyIC

MAP20

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BLACK BOX

NeTeJisVp

t_res....

External Parameters Process Result

RF powerRF freq.PressureFlow rate

Gas mixture…

Etch rateEtch selectivity

UniformityDeposition rateCharacteristics

- Trial and Error -

Radicals(chemical)

IEDFs(physical)

Plasma Parameters

Bottleneck for the predictable plasma process simulationLimitation of bulk plasma simulation

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ICM

AP2018

Particle Simulation• Super-particles

(one super-particle= 105~7 )• Newton-Lorentz equation

• Poisson’s equation

• Less assumptions

• Heavy computation

Kinetic Simulation• Distribution function

• Solve Boltzmann’s Equation

• Eulerian grids

• Heavy computation

• Less assumptions

),,( tvxf

Fluid Simulation•Average f over velocity space

• Continuity eq.

•Momentum conservation eq./ Drift-diffusion approximation

• Energy conservation eq. /

•Many assumptions are used.

• Easy computation

ctf

vf

mqE

xf

vtf

¶¶

=¶¶×+

¶¶×+

¶¶

ii vx , ),(),,(),,( txTtxutxn e

),BvE(Fv ´+== qmdtd

),(),(),( txentxtxV -=-=Ñ×Ñ re

spspsp Stn

=×Ñ+¶

¶Γ

Toward development of the realistic and predictable plasma simulatorBulkPlasma:Categoriesofbulkplasmasimulations

32

ICM

AP2018

Toward development of the realistic and predictable plasma simulatorResearch Topic IV : Detailed kinetic approaches

Experiment of surface reaction :Oxide/Nitride etch under FC/HFC plasma with Ar and O2 additives

47

ICM

AP2018