ppm surface plasmon presentation 2005
TRANSCRIPT
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Surface plasmon nanophotonics:opt ics below the dif fract ion limit
Albert Polman
Center for nanophotonicsFOM-Inst itute AMOLF, Amsterdam
Jeroen KalkmanHans MertensJoan PenninkhofRene de Waele
Teun van Dillen
Jen DionneLuke Sweat lockHarry Atwater
Arj en VredenbergChristina GrafAlfons van Blaaderen
PPM conference, Ut recht, 10-2-2005
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Optical fiber: long distance communication
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Photonic integrated circuits on silicon
1 mm
SiO2/Al2O3/SiO2/Si
with C. van Dam, M.K. Smit, TUD
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The worlds smallest erbium-doped optical amplifier
1.53 m signal, 1.48 m pump, 10 mW, gain: 2.3 dB
Waveguide spiral size: 1 mm2
minimum bending radius > 50 mAppl. Phys. Lett. 68, 1886 (1996)
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From a FOM/ PPM prototype to a 40 M$ company
SymmorphixSunnyvaleCA, USA
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The first Er laser on Si fully made with CMOS technology
1500 1550 1600
-60
-50
-40
-30
-20
Signal(dBm)
Wavelength (nm)
Single-mode lasing
with K. Vahala group, CALTECHAppl. Phys. Lett. 84, 1037 (2004)Phys. Rev. A 70, 033803 (2004)
Nanophoto
nicmaterials
group
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Surface plasmon: EM wave at metal-dielect ric interface
z
x
( )tzkxki zxeEtzxE= 0),,(
rr
2/1
"'
+=+=
dm
dmxxx
cikkk
=
ck
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Dielect ric constants for silver: = + i
200 400 600 800 1000 1200 1400 1600 1800-150
-100
-50
0
50
Measured data:
'
"Drude model:
'"
Modified Drude model:
'
"
Wavelength (nm)
'
bound SP mode: m < -d
-d
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Re kx
d
xck
Surface plasmons dispersion:
large k
small wavelength
Ar laser:
vac = 488 nmdiel = 387 nm
SP= 100 nmAg/ SiO2
X-ray wavelengthsat optical frequencies
2/1
+=
dm
dm
xc
k
3.4 eV(360 nm)
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SPs can have very long propagat ion distance
100 m
High lossin regionof small SP
Tune SPdispersionwith index
dielectric
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Photonic integrated circuits on silicon
1 mm
SiO2/Al2O3/SiO2/Si
Plasmonic
Al
Opto-electronic integration, (e.g. interconnects)Plamonic nanolithography
10 m
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Surface plasmons can improve solid state lighting
interaction between plasmon and radiating dipole
1450 1500 1550 1600 16500.0
0.2
0.4
0.6
0.8
1.0
0 5 10 15 20 25
e-3
e-2
e-1
e0
Energy (eV)
NormalizedPLintensity
Wavelength (nm)
0.84 0.82 0.8 0.78 0.76
4I
15/2
4I
13/2
Silver
Air
= 1.0 Er/cm2
Normalized
intensity
Time (ms)
500 keV Er
silver
glass
glass
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far-fieldemission
metal
Wrad
WSP
Coupling to surface plasmons
Wtot = Wrad + WSP
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10-1
100
101
102
103
104
105
106
1E-3 0.01 0.1 1 1010
-1
100
101
102
103
104
105
0 250 500 750 1000 1250 15000.0
0.5
1.0
1.5
Wnr
WSP
Wrad
Wtotal
Er distribution
Glass
Silv
er
Glass
Air
Distance (nm)
Normal
ize
ddecayra
te
0.6
0.8
1.0
Wrad
P
ower
k (kglass
)
Decay rate as a function of distance to metal
=1535 nm
0.0 10.0 20.0 30.0
0.13534
0.36788
1
2.71828
Air
=9.3 ms
Ag
=5.8 ms
ln(normalizedintensity)
time (ms)
Decay near Agis faster thanin air
Appl. Phys. Lett . in press (2005)
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Si quantum dots at dif ferent depths: theory & experiment
0 200 400 600
1xe-4
1xe-3
1xe
-2
1xe-1
1xe0
Ag
Air
PLint
ens
ity
Time (s)
=750 nm, d=40 nm
0 100 200 300 400 500 600 7000.0
1.0
2.0
3.0
4.0
ExcessSi(1021Si/cm
3)
Depth (nm)
0.8
1.0
1.2
1.4
1.6
em=750 nm
silver-glass interface
air-glass interface
Norma
lizeddecayrate
0 100 200 300 4000
1
2
3
Depth (nm)
em
=750 nm
Air
Ag
Decayrate(10
4s
-1)
Couplingto SPs
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far-fieldemission
metal
recycling of anon-radiativedecay path!
Wrad
WSP
Wrad+WSP
QE 1
Turning a slow emitter into a fast emitter
Applications:
Fast modulat ion of Er LEDs, Si quantum dot LEDSIncreased quantum eff iciency of solid state emit ters
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Ag
Erbium ions implanted in silica glass subst rate
Grat ing etched in sil ica Ag f ilm deposit ed
SiO2
Herasil glass - 250 m thick
350 keV keV Er, 1.21015 cm-2 , 77 KThermal anneal 800 C, 1 hr
e-beam lithography, dry etchinggrating: p=10701 nm, d=230 nmAg sputter evaporation (t=300 nm)
pump=488 nm
Er
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PL intensity as a function of angle (=1534 nm)
0 20 40 60 80Angle (
o)
's'
's'
Angle (o)
0 20 40 60 80
0
2
4
6
'p'
'p'
PL
Intensity
Appl. Phys. Lett. 83, 4137 (2003)
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Dispersion of thin-film surface plasmons
Two surface plasmon modes
L-
L-(symm)
Thinner film:Shorter SPwavelength
Example:
HeNe = 633 nmSP = 60 nm
L+(asymm)
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Thin-f ilm surface plasmons: propagat ion length
More loss forthinner f ilms
Less loss forthinner f ilms
L-(symm)
L+(asymm)
Challenge: fabricate smooth thin metal f ilms
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Dispersion-controlled plasmonic devices
0 200 4 00 600 80 0 1000
-1.0
-0.5
0.0
0.5
1.0
Y
Ax
isTitle
Distance (nm)
Plasmonic concentrator
Si
Ag
NC
Small SPLarge field
enhancementvgroup=0
Elect rically pumpedsingle-mode SP source
Plasmonic lens
thin section Surface plasmon laser
Si
Ag
NC
Th l i f i f l i h
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m= 2.2
Low frequency
Er
On resonance
Er
The ult imate confinement of light :surface plasmons in metal nanoparticles
Electromagnet ic energy
t ransfer well below dif fract ionlimit high int egrat ion densit y:
t rue nanophot onics
Surface-enhanced Raman scat t eringSurface-enhanced f luorescencesingle molecule det ect ion
(S. A. Maier et al .)
Metal nanopart icles
Molecules
SiO2
nm
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Tuning the plasmon resonance by shape: core-shell colloids
30 MeV Cu
31014 cm-2
Adv. Mater. 16, 235 (2004)
Au/ SiO2
500 nm
400 600 800 1000 1200 1400 1600
0.6
0.7
0.8
0.9
1.0
extinction
[a.u.]
[nm]
SiO2/ Ag
nm
Adv. Mater. In press (2005)
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10 nm 30 MeV Si9x1014/ cm2
s-pol
p-pol
Modeling plasmon resonances in particle arrays
Phys. Rev. B., in press (2005)
5000-fold enhancementfield concentration: r=3 nm (3 dB)
Appl. Phys. Lett. 83, 4137 (2003)
nm
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Nanophot
onicmaterials
group
Final goal: surface plasmon nanophotonic waveguides
500 nm
Plasmonics: energy t ransferand confinement of light
below the dif fract ion limit
500 nm
nm
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Group leaders A. Polman K. Kuipers A. Lagendij k W.L. Vos J. Verhoeven
A. Tip NN (Philips)
Total staff 45 fte
Cente
rforNanophotonics
Fundamental Reseach & Innovat ionCenter for NanophotonicsFOM-Inst itute AMOLF
Nanophotonics is a unique field ofresearch because it combines
a wealth of scientific challengeswith a large variety of
near-term applications.
Fundamental
concept
Prototype
component
Materials
development
Transfer to
industry
www erbium nlC l i
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www.erbium.nlConclusions
mkm mm
photonics
plasmonics