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     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    These PowerPoint color

    diagrams can only be used by

    instructors if the 3rd Edition

    has been adopted for his/her

    course. Permission is given to

    individuals who havepurchased a copy of the third

    edition with CD-!"

    Electronic "aterials and

    Devices to use these slides in

    seminar# symposium and

    conference presentations

    provided that the boo$ title#

    author and % "c&raw-'ill aredisplayed under each diagram.

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     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    Definition of Capacitance

    C o = capacitance of a parallel plate capacitor in free

    space

    Qo = charge on the plates

    V  = voltage

    C o  =

    Qo

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    Fig 7.1

    !a* Parallel plate capacitor $ith free space +et$een the plates.

    !+* s a sla+ of ins-lating material is inserted +et$een the plates, there is an eternal c-rrent

    flo$ indicating that more charge is stored on the plates.

    !c* The capacitance has +een increased d-e to the insertion of a medi-m +et$een the plates.

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    Fig 7.6 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    Polari/ation charge densit0 on the s-rface of a polari/ed medi-m is related to the normal

    component of the polari/ation vector.

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    Fig 7.9 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    !a* a2l chain in the a2l cr0stal $itho-t an applied field. verage or net dipole

    moment per ion is /ero.

    !+* 3n the presence of an applied field the ions +ecome slightl0 displaced $hich leads to

    a net average dipole moment per ion.

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    Fig 7.! From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    !a* n ac field is applied to a dipolar medi-m. The polari/ation P ! P = Np* is o-t of phase $ith

    the ac field.

    !+* The relative permittivit0 is a comple n-m+er $ith real !ε r 4* and imaginar0 !ε r 44*

     parts that ehi+it fre5-enc0 dependence.

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    Fig 7.7 From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    Cole-Cole plots

    Cole-Cole plot is a plot of ε ″ r   vs. ε ′r  as a f-nction of fre5-enc0, ω  . s the

    fre5-enc0 is changed from lo$ to high fre5-encies, the plot traces o-t a

    circle if De+0e e5-ations are o+e0ed.

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    Fig 7.2

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    !a* 6o-ndar0 conditions +et$een dielectrics

    !+* The case for Et 1 = Et '.

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    Fig 7.2"

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    Time to +reado$n and the field at +reado$n, E+r, are interrelated and depend on the mechanism that ca-ses

    the ins-lation +reado$n. Eternal discharges have +een ecl-ded !+ased on 8.. Dissado and 9.2. Fothergill,

    Electrical Degradation and 6reado$n in Pol0mers, Peter Peregrin-s 8td. for 3EE, :, " 1;;', p.

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    Fig 7.!"

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    The pie/oelectric effect.

    !a* pie/oelectric cr0stal $ith no applied stress or field.

    !+* The cr0stal is strained +0 an applied force that ind-ces polari/ation in the cr0stal and generates s-rface charges.

    !c* n applied field ca-ses the cr0stal to +ecome strained. 3n this case the field compresses the cr0stal.

    !d* The strain changes direction $ith the applied field and no$ the cr0stal is etended.

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    Fig 7.#2

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    The pie/oelectric spar generator.

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    Fig 7.#7

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    The p0roelectric detector. >adiation is a+sor+ed in the detecting element, , $hich generatesa p0roelectric voltage that is meas-red +0 the amplifier. The second element, 6, has a reflecting

    electrode and does not a+sor+ the radiation. 3t is a d-mm0 element that compensates for the

     pie/oelectric effects. Pie/oelectric effects generate e5-al voltages in +oth and 6 $hich across

    a and + !the inp-t of the amplifier* cancel each other.

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    Fig 7.#"

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    !a* Parallel plate capacitor $ith free space +et$een plates $hich has +een charged to avoltage V o. There is no +atter0 to maintain the voltage constant across the capacitor. The

    electrometer meas-res the voltage difference across the plates and, in principle, does no

    affect the meas-rement. !+* fter the insertion of the dielectric, the voltage difference is

    V , less than V o and the field in the dielectric is E  less than E o.

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    Fig 7.#9

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    2onsider a #a-ss s-rface ?-st aro-nd the right plate and $ithin the dielectric

    encompassing +oth @Qfree and −Q P . ! E  is the electric field.*

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    Fig 7.5

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    !a* Polari/ation and the depolari/ing field in a spherical shaped dielectric placed

    in an applied field E o

    !+* Depolari/ation field in a thin rod placed in an applied field is nearl0 /ero.

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    Fig 7.52

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    !a* The macroscopic field E   is determined +0 the applied field E o and the depolari/ation field d-e

    to P . !+* 2alc-lation of the local field involves maing a h0pothetical spherical cavit0S  inside the

    dielectric. This prod-ces polari/ation s-rface charges on the inside s-rfaceS  of the cavit0. The

    effects of the dipoles inside the cavit0 are treated individ-all0.

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    Fig 7.56

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    The 8angevin f-nction.

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    Fig 7.5"

     From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

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    Fig 7.59

    From Principles of Electronic Materials and Devices, Third Edition, S.O. Kasap (© McGraw-Hill, 2005)

    &eterogeneo-s dielectric media eamples

    !a* Dispersed dielectric spheres in a dielectric matri.!+* heterogeneo-s medi-m $ith t$o distinct phases 3 and 33.

    !c* Series mit-re r-le.

    !d* Parallel mit-re r-le.