power supply studies for the calorimeters & muon spectrometer mauro citterio, on behalf of the...
DESCRIPTION
Requirements for PS system for Hi-LHC upgrade ….. and new experiments New design full replacement of the present systems, whose design dates back at year 2000 Increased rad-hard performance related to increased luminosity of the accelerator Minimization of power loss in cables used for carrying current from “PS distributors” to detectors front-ends move “distributors” as close as possible to the front-end Increased B-tolerance of systems to mount PS closer to detectors and magnets Better reliability and controls, in order to reduce access time and increase the overall detector efficiency Avoide industrial intellectual property by implementing the CERN Open Hardware Policy 11/16/2011M. Citterio - Atlas Upgrade Week3TRANSCRIPT
Power Supply Studies for the Calorimeters & Muon Spectrometer
Mauro Citterio, on behalf of the INFN-APOLLO Collaboration
M. Alderighi(1,6), M. Citterio(1), M. Riva(1,8), P. Cova (3,10), N. Delmonte(3,10), A. Lanza(3), R. Menozzi(10), A. Paccagnella (2,9), F. Sichirollo(2,9), G. Spiazzi(2,9), M. Stellini(2,9), S.
Baccaro(4,5), F. Iannuzzo(4,7), A. Sanseverino(4,7), G. Busatto(7), V. De Luca(7) (1) INFN Milano, (2) INFN Padova, (3) INFN Pavia, (4) INFN Roma, (5) ENEA UTTMAT, (6)
INAF, (7) University of Cassino, (8) University of Milano, (9) University of Padova, (10) University of Parma
M. Citterio - Atlas Upgrade Week 2
The actual PS systems
Extensive use of the DC/DC technology, which requires also a careful design in terms of EMC
Integration with detectors at the design level, to avoid both mechanical and electrical criticalities
Necessity of rad-hard devices, to place modules in the experimental cavern
Necessity of B-tolerant systems, to place them close to detectors
Implementation of redundancy, to face difficult or no access Complex DCS systems, to achieve full remote control Industrial engineering design and industrial scale production
11/16/2011
M. Citterio - Atlas Upgrade Week 3
Requirements for PS system for Hi-LHC upgrade ….. and new experiments
New design full replacement of the present systems, whose design dates back at year 2000
Increased rad-hard performance related to increased luminosity of the accelerator
Minimization of power loss in cables used for carrying current from “PS distributors” to detectors front-ends move “distributors” as close as possible to the front-end
Increased B-tolerance of systems to mount PS closer to detectors and magnets
Better reliability and controls, in order to reduce access time and increase the overall detector efficiency
Avoide industrial intellectual property by implementing the CERN Open Hardware Policy
11/16/2011
M. Citterio - Atlas Upgrade Week 4
New system architectures – a proposal
11/16/2011
Case study: ATLAS LAr calorimeters
CRATE
280 Vdc
Main DC/DC
Converter
Card #3POL
LDO Convert
er
POL
LDO Convert
er
POL
LDO Convert
er
Card #2POL
LDO Convert
er
POL
LDO Convert
er
POL
LDO Convert
er
Card #1POLniPOL
Converter
POLniPOL Converter
POLniPOL ConverterRegulated
DC bus
POL Converter with high step-down ratio
Characteristics:• Main isolated converter
with N+1 redundancy
• High DC bus voltage (12V or more)
• Distributed Non-Isolated Point of Load Converters (niPOL) with high step-down ratio
M. Citterio - Atlas Upgrade Week 5
New system architectures – a proposal
11/16/2011
MuonDetectors
280 Vdc
Main DC/DC
Converter
Chamb #3POL
LDO Convert
er
POL
LDO Convert
er
POL
LDO Convert
er
Chamb #2
POL
LDO Convert
er
POL
LDO Convert
er
POL
LDO Convert
er
Chamb #1
niPOL Converter
Regulated DC bus
POL Converter with high step-down ratio
Characteristics:
• Main isolated converter with N+1 redundancy
• High DC bus voltage (12V or more)
• Distributed Non-Isolated Point of Load Converters (niPOL) with high step-down ratio, installed on-chamber and high B-tolerant
Parallel study: ATLAS Muon Spectrometer
The topology of the Main DC/DC Converter
11/16/2011 M. Citterio - Atlas Upgrade Week 6
Q1
Q2
Q3
Q4
T1
Co
C4 L
VinVout
+-C3
C2
C1 T2
T3
iT2
iL
T4
+
+
+
+
Vout = 12V
3 modules 1.5 kW each• redundancy n+1• current sharing• interleaved operationsSwitch In Line Converter - SILC• phase shift operation Phased shifted converter well suited
for multi-outputs, or-ed connection and single pole dynamic
• ZVS transitions• high efficiency• reduced switch voltage stress • high frequency capability
Transient response
Vout
Iload
Output voltage responseto a load step change (25 A 37 A)
13 cm
33 cm
7 cm
M. Citterio - Atlas Upgrade Week 7
The planar transformer in the main converter
11/16/2011
Turn ratios 10:10:2: 4 units connected in parallel
4.71
mm
22
laye
rs
10 layers2 concentric turnsin each layer
4 layers
4 layers
8
Planar transformer test
11/16/2011 M. Citterio - Atlas Upgrade Week
11/16/2011 8
orange = primary winding voltage blue = secondary winding voltagemagenta = primary winding currentgreen = snubber current (proportional to the switching losses).
Bstat. 789 Gauss Bstat. 2591 Gauss
Transformer behavior in stationary Magnetic Field
M. Citterio - Atlas Upgrade Week 9
Study of new materials for operation in high magnetic fields
11/16/2011
Study of high-B materials: Collaboration with the private company FN S.p.A. Base material by Hoganas, FES168 HQ, Fe – Si(6.5-
6.9%) Problems found and solved in the injection
moulding phase Still problems in the sintherization phase First B tests by end of the year (hopefully)
First moulded samples of FES168
Thermal Analysis of the main converter
M. Citterio - Atlas Upgrade Week 11
Point of load studies
11/16/2011
Specifications:Input voltage: Ug = 12 VOutput voltage: Uo = 2.5 VOutput current: Io = 3AOp. frequency: fs = 1 MHz
350 nH air core inductorsDim.: L = 6cm, W = 4.2cm
M. Citterio - Atlas Upgrade Week 12
More studies on Point of Load
11/16/2011
M. Citterio - Atlas Upgrade Week 13
Radiation studies on the “critical” components
11/16/2011
Look for power MOSFETs radiation tolerant up to 10kGy and 1014/(s ∙ cm2) neutrons and protons:
many components, with Vd ranging from 30V to 200V and polarized in various configurations, were tested at the 60Co g ray source in the ENEA center of Casaccia, near Roma
same components were tested with a heavy ion beam, 75Br at 155MeV, at INFN Laboratori Nazionali del Sud in Catania
within the end of the year same components will be tested under neutrons, at the Casaccia nuclear reactor Tapiro, and under protons, at INFN LNS
Seeking for power MOSFETs, controllers and FPGA radiation tolerant: first irradiation was performed under 216MeV proton beam in Boston, at
Massachusetts General Hospital facility, using some of devices irradiated in Italy. Other irradiation campaigns are planned at the same facilities in the next months
Results are still preliminary and under analysis. Other irradiation campaigns are necessary in order to select good devices
Power Mosfets exposed to gamma raysDevices under test:
30V STP80NF03L-04
30V LR7843
200V IRF630
Used doses:
I 1600 Gray
II 3200 Gray
III 5890 Gray
IV 9600 Gray
Measurements :
Breakdown Voltage @ VGS=-10V
Threshold Voltage @ VDS=5V
ON Characteristic @ VGS=10V
Gate Leakage @ VDS=10V
For each type of device 20 samples were tested, 5 for each dose value
(tested at the ENEA Calliope Test Facility)
Mosfet Exposed to Heavy Ions.The SEE framework
N+
Drain
P +
N +
P _
GateSource
N_
Body
N+ N+
Drain
P +
N +
P _
GateSource
N_
Body
N+
Destructive Single Event Effects in Power MOSFETS (tested at INFN Catania)
Single Event Burnout Single Event Gate Rupture11/16/2011 M. Citterio - Atlas Upgrade Week 15
The SEE experimental set-up
Fast Sampling Oscilloscope
Parameter Analyzer
N+
Drain
P +
N +
P _
GateSource
N_
Body
N+
Cg
Cd
50 W
50 W
1 MW1 MW
Vgs
Impacting Ion DUT
Vds
0 500 1000 1500 2000-2.0
-1.5
-1.0
-0.5
0
Time [s]
Gat
e Le
akag
e C
urre
nt [
A ]
20 40 60 80 100 120
0
5
1
15
Time [ns]
Cur
rent
[mA
]
The current pulses
The IGSS evolution during irradiation
11/16/2011 M. Citterio - Atlas Upgrade Week 16
0 10 30 400
0.5
1
1.5
2
2.5
x 1011
Charge [pC]
50 100 1508
10
12
14
16
Vds [V]
Cha
rge
[pC
]
Vds
20 40 60 80 100 120
0
0.5
1
1.5
0
0.5
1
1.5
0
Time [ns]
Cur
rent
[mA
]
10 20 30 40 10 20 30 40
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5x 1010
Charge [pC]
The SEE analysisTIME DOMAIN WAVEFORMS SCATTER PLOT
NUMERICAL INTEGRATION
Γ-LIKE DISTRIBUTION
FUNCTION PARAMETERS EXTRACTION
MEAN CHARGE vs BIAS VOLTAGE Γ-LIKE DISTRIBUTION FUNCTION11/16/2011 M. Citterio - Atlas Upgrade Week 17
The SEE experimental results
Devise TID Bias Conditions during Irradiation Drain Damage Gate DamageD21 0Gy Vds=20V-110V vgs=-2V Vds=100V-110V Vds=100V-110VD22 0Gy Vds=20V-120V vgs=-6V Vds=110V-120V Vds=100V-110VD06 1600Gy Vds=20V-70V vgs=-2V Vds=60V-70V Vds=60V-70VD10 3200Gy Vds=20V-50V vgs=-6V Vds=40V-50V Vds=40V-50VD14 5600Gy Vds=20V-55V vgs=-6V Vds=50V-55V Vds=40V-50VD16 5600Gy Vds=20V-50V vgs=-6V Vds=45V-50V Vds=40V-45VD17 9600Gy Vds=20V-45V vgs=-6V Vds=40V-45V Vds=40V-45V
The increase of the ϒ-dose causes a reduction of the critical bias condition at which drain and gate damages appear
200 V Mosfet: IRF630
0 20 40 60 80 100 120 140 160 180 200
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
Time [ns]
Cur
rent
[mA
]
0 20 40 60 80 100 120 140 160 180 200
0
5
10
15
20
25
30
35
Time [ns]
Cur
rent
[mA
]
The SEE experimental results
Two different sensitive areas
The SEB current pulse
D21 0Gy Vds=110V Vgs=-2V
D21 0Gy Vds=110V Vgs=-2V
20 30 40 50 60 70 80 90 100
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
Vds [V]
Cha
rge
[pC
]
Mean charge vs Vds
11/16/2011 M. Citterio - Atlas Upgrade Week 19
0 20 40 60 80 100 120 140 160 180 200-20
0
20
40
60
80
100
120
Time [ns]
Cur
rent
[A
]
D21 0GyD10 3200GyD14 5600GyD17 9600Gy
The SEE experimental resultsScatter-plot Vds=50V
The increase of the ϒ-dose causes a widening of the current pulses
11/16/2011 M. Citterio - Atlas Upgrade Week 20
Characterization requires that an SEB circumvention method be utilized
SEB characterization produces a cross-sectional area curve as a function of LET for a fixed VDS and VGS. Generally SEB is not sensitive to changes in the gate bias, VGS. However, the VGS bias shall be sufficient to bias the DUT in an “off” state (a few volts below
VTH), allowing for total dose effects that may reduce the VTH.
Mosfet Exposed to ProtonsSEB characterization
The only difference in the test set-up was that the current probe was on the Mosfet Source
11/16/2011 M. Citterio - Atlas Upgrade Week 21
Mosfet Exposed to Protons
The results are still preliminary. Only the 200V Mosfets (IRF 630) were exposed
Proton energy: 216 MeV (facility at Massachusetts General Hospital, Boston)Ionizing Dose: < 30 Krads
An “absolute” cross section will require the knowldege of the area of the Mosfet die which is unknown.
10-12
10-11
10-10
10-9
10-8
10-7
182 184 186 188 190 192 194 196
IRF630 - ST
Cro
ss S
ectio
n [c
m-2
]
VDS [Volt]
10-12
10-11
10-10
10-9
10-8
10-7
175 180 185 190 190 195
IRF630 - International Rectifier
Cro
ss S
ectio
n [c
m-2
]
VDS [Volt]11/16/2011 M. Citterio - Atlas Upgrade Week 22
The number of SEB events recorded at each VDS was small less then 30 events for the ST less than 150 events for the IR devices
Large statistical errors affect the measurements
The cross section at VDS = 150 V (“de-rated” operating voltage) can not be properly estimated
• To effectively qualify the devices for 10 years of operation at Hi-LHC, the cross section has to be of the order of 10-17/ cm2, which puts the failure rate at <1 for 10 years of operation
• Proton irradiation campaigns with increased fluences are planned.
Work still in progress ……………..
Mosfet Exposed to Protons
11/16/2011 M. Citterio - Atlas Upgrade Week 23
Conclusions
11/16/2011 M. Citterio - Atlas Upgrade Week 24
Distributed Power Architecture has been proposed Main converter (SILC topology)\ Point of load converter (IBDV topology)
Critical selcction of components to proper withstand radiation Controller, Driver and Isolator FPGA for overall monitoring MOSFETS
Mosfets Devices have identified and tested Gamma ray Heavy ions Protons
Some results are encouraging, however they require more systematic validation