planar magnetron sputtering sources - new york university · permitting the manufacture and...

PlanarMagnetronSputteringSources

BENEFITS OF THE STANDARD “MAK” SPUTTER SOURCEOnly this unique Planar Magnetron can provide ALL these Advantages

• Cathode and magnets are ISOLATED FROM WATER

• Design requires only ONE vacuum seal

• Supplied as either HV or UHV

• NO water to Vacuum seal

• Sputters MAGNETIC MATERIAL

• Target requires NO CLAMPING or BONDING

to cathode

• Operates in DC or RF power modes

• Sputters from 0.5 - 600 mTorr Ar.

• Adjustable anode, PREVENTS build up

and shadowing

THE COMPANYUS Inc., was established in 1976 and located in the heart of“Silicon Valley”. This location provides cooperative design,test, and thin film application for product advancements, withwell known universities and national laboratories.Since the early 1980’s exclusive licenses from two prominent“Silicon Valley” laboratories have been granted to US Inc., permitting the manufacture and distribution of patented PlanarMagnetron Sputter Sources. With over 6,000 sources deliveredthroughout the world, US Inc. has become known world wideas a leading supplier of sputter deposition sources.

THE PRODUCTThe MAK source, US Inc.’s successor to the highly regardedUS GUN, is produced at the company’s San Jose, CaliforniaU.S.A. facility. Introduction of the MAK was in late 1995 andit’s rapid sales growth caused the discontinuation of the USGUN at the beginning of 1999. Designed to present the smallest profile possible, with higher rates than any comparable sputter sources available, MAK users havedeveloped much of today’s thin film techniques.

TABLE OF CONTENTS

PAGEIntroduction . . . . . . . . . . . . . . . . . . . . . . . . 2MAK 1.3”. . . . . . . . . . . . . . . . . . . . . . . . . . .3MAK 2” . . . . . . . . . . . . . . . . . . . . . . . . . . . .4MAK 3” . . . . . . . . . . . . . . . . . . . . . . . . . . . .5MAK 4” . . . . . . . . . . . . . . . . . . . . . . . . . . . .6MAK 6” . . . . . . . . . . . . . . . . . . . . . . . . . . . .7MAK Multi Source . . . . . . . . . . . . . . . . . . . 8Options . . . . . . . . . . . . . . . . . . . . . . . . . . . .9Substrate Heater . . . . . . . . . . . . . . . . . . . . 10Planar Magnetron Sputtering . . . . . . . . . . . 11

US Inc., San Jose, CA U.S.A.408-363-6909 • FX: 408-363-6996

INTRODUCTION

2 US Inc. 408-363-6909 • www.us-incorp.com

1.3” MAK

MAK Working distance

01"1.5" 1" 1.5"

ANGSTROMS

WorkingDistance

RateA/min

Uniformity2” Dia. 3” Dia.

2” 1750 ±7% ±20%3” 975 ±5% ±12%

1.3” Diameter 0.185” Thick Cu Target200 W. @ 5 mTorr

1.3” MAK TECHNICAL DATA PART # L130A01

Source Dimensions 1.3” MAKVertical Size 4.45”Outside Diameter 1.50”

MountingFlange 3.375” CF (min)Feedthrough 0.75” Quick Coupler

Target SpecificationsTarget Diameter 1.3”Target Thickness [MAX] 0.225”Target Mounting MagneticMagnetic Materials Yes

Magnet DesignType Nd/Fe BConfiguration Balanced

Operation SpecificationsDC Max Power 350WRF Max Power 200WCathode Voltage (Volts) 200-1000VDischarge Current (Max amps) 1.00 ampOperating Pressure (mtorr) 0.5-600

Cooling WaterFlow Rate 0.6 gpmConductivity No Requirement

1.3” MAK typical rates and uniformity performance

Part # L130A01

1180

15101750

1520

1195

760

885975

890

720

4.45”

ø2.325”

ø0.75”

12.0” STANDARD(CUSTOM LENGTHS

AVAILABLE)

HN CONNECTOR

INCHES

2”3”

1.50”

3

FIXEDANODE

US Inc. 408-363-6909 • www.us-incorp.com


01"1.5" 1" 1.5"

ANGSTROMS

2” MAK

WorkingDistance

RateA/min


2” 6200 ±6% ±16%3” 2800 ±3% ±10%

2” Diameter 0.250” Thick Cu Target500 W. @ 5 mTorr

2” MAK TECHNICAL DATA PART # L200A01

Source Dimensions 2” MAKVertical Size 3.95”Outside Diameter 2.33”

MountingFlange 3.375” CF (min)Feedthrough 0.75” Quick Coupler

Target SpecificationsTarget Diameter 2”Target Thickness [MAX] 0.312”Target Mounting MagneticMagnetic Materials Yes

Magnet DesignType Nd/Fe BConfiguration Balanced/Unbalanced

Operation SpecificationsDC Max Power 1000WRF Max Power 400WCathode Voltage (Volts) 200-1000VDischarge Current (Max amps) 3 ampOperating Pressure (mtorr) 0.5-600


2” MAK typical rates and uniformity performance

4445

55506200

5580

4475

22952620 2800 2630

2270

INCHES

Part # L200A01

ø2.33”

3.91”

ø0.75”


AVAILABLE)

ø1.50”

ANODE HEIGHTADJUSTABLE TOTARGET THICKNESS

HN CONNECTOR

2”3”


3” MAK


01"2" 1" 2"

ANGSTROMS

WorkingDistance

RateA/min


3” 10,000 ±5% ±15%4” 5600 ±3% ±10%




MountingFlange 6” CF (min)Feedthrough 0.75” Quick Coupler






7300

910010,000

9135

7320

4650

52305600 5210

4620

INCHES

Part # L300A01-CF

3.38”

4.35”

ø2.25”

ø0.75”


AVAILABLE)

HN CONNECTOR

ANODE HEIGHTADJUSTABLE TO TARGET THICKNESS

3”4”

5US Inc. 408-363-6909 • www.us-incorp.com

4” MAK


01.5"2" 1.5" 2"

ANGSTROMS

WorkingDistance

RateA/min


4” 6480 ±5% ±7%6” 2900 ±2% ±3%





Target SpecificationsTarget Diameter 4”Target Thickness [MAX] 0.750” Target Mounting MagneticMagnetic Materials Yes





60706470

5840

6090

5830

2750

27802900 2780

2715

INCHES

Part # L400A01

4.45”

4.60”

ø0.75”

ø2.25”



AVAILABLE)

HN CONNECTOR

4”6”



02"3" 2" 3"

ANGSTROMS

6” MAK

WorkingDistance

RateA/min


4” 13,000 ±4% ±12%6” 5800 ±2% ±7%










10,225

12,20012,900

12,180

10,150

5000

55005800

5520

5050Part # L600A01

INCHES

4”6”



AVAILABLE)

HN CONNECTOR

6.55”

6.75”

ø1.25”


ø4.50”

• Provides simultaneous and/or sequential deposition

• Multi-Source assemblies in groups of 3, 4, or 5

• Available on 8” - 24” CF, ISO, or ANSI• Custom designs• Shutters, shielding and gas injection

available

DESIGN EXAMPLES

1.3” MAK GUN3 PLCS

CUT-AWAY AT GUNLOCATION

7.0”

13°

CHAMBER REF.

1 of 4 SHUTTERS IN OPEN POSITIONROTATED 49° TO OPEN

RELATIVE TARGET/SHUTTER IN

CLOSED POSITION

C C

8.22”

6” FOCAL POINT

7.40”

3-1.3” MAKS ON 10” CF W/SHUTTERS 4-3” MAKS ON 16.5” CF W/SHUTTERS

MAK MULTI SOURCE


ROTARY MOTION3 PLCS

10” CF

MAK FLEX MOUNTThe flex mount feedthru allows for angular adjustment to theMAK’s sputtering attitude. Use of a welded formed bellows andspecial support bracket, any angle from 0 to 30 degrees isfirmly held in place. Power is applied thru a coaxial cable; thusassuring R.F continuity.

MAGNET ARRAYPERFORMANCE ADAPTABILITYThe single piece cathode assembly permits change of the magnetic structure without disassembly of the MAK.Performance requirements from—excellent uniformity, withgood target utilization to— high rates, with maximum targetthickness is achieved. The magnetic array is field changeable.

MAGNETIC MATERIAL SPUTTERINGDirect attachment to the active cathode, without use of a magnetic housing, provides a small free space between targetand magnets. This places a stronger magnetic flux at the targetsurface allowing sputtering of magnetic material as standard.

INSITU LINEAR MOTIONProvides target to substrate distancechange without breaking vacuum.• Adaptable to 1.3” thru 4” MAK• 1-6” Linear Travel• Welded Bellows• Bakeable to 120°C• UHV Compatible

Part # L200A01-FM

MAK OPTIONS


VIEWROTATED

90°

6.20”

8.60”

12” STANDARD(CUSTOM LENGTHS

AVAILABLE)

ø0.75”

8” CF

0.750” QUICKCOUPLE FORSUPPORTONLY

6” EXTENSION

2” MAK SOURCE

BELLOWS

3.375” CF

KEEPERMAGNETS

TARGET

ANODE

CATHODE(COOLINGSURFACE)

SPECIFICATIONS P/N SU200 P/N SU3002” Heater 3” Heater

1. Maximum Temperature 950°C 950°C2. Temperature Stability ±2% ±2%3. Temperature Uniformity ±4°C ±8°C

(center circle diameter) 1.25” 2.25”4. Maximum Voltage 60 volts 90 volts5. Maximum Current 10 amps 9 amps6. Heater Resistance 5 ohms 10 ohms7. Power Supply AC/DC AC/DC8. Ramp Time to 750°C 4 Min 5 Min.9. Ramp Time to 950°C 12 Min. 13 Min.

10. Cool-down Time 35 Min. 45 Min.(950° to room temp., 1 atm pressure)

11. UHV Compatibility Yes Yes12. Electrical Biasing Yes YesACCESSORIES

Deluxe Feedthru and Mounting Stand• Adjustable Mounting Bracket with X, Y, Z Movement• Two (2) Type S Thermocouple Leads• Two (2) Power PinsMounted on a 2 3/4”, 4 1/2” or 6” Rotatable CF

Mounting Stand• Adjustable Mounting Bracket with X, Y, Z Movement Mounted on a 23/4”, 41/2” or 6” Rotatable CF

18 Inch Hook-Up Kit• Type S Thermocouple 18” Leadwire w/Ceramics• Two .050” OFHC Copper Power Leads 18” Long w/Ceramics

FEATURES• Unprecedented temperature uniformity• For use in sputtering, laser ablation, ion beam deposition,

ECR, MOCVD and others

SUBSTRATE HEATERS

Part # SU-300

Part # SU400-C

4” NON-CONTACT HEATER


PLANAR MAGNETRON SPUTTERING

SPUTTERINGSputtering is a method of depositing both thin metal films andinsulators onto a substrate. Unlike evaporation, the material tobe sputtered does not have to be heated. The deposition ofalloys and insulators as composite materials are two importantbenefits of sputtering. Sputtering has additional benefits as adeposition technique when compared with evaporation.

PRINCIPLES OF SPUTTERINGSputtering is a physical process that can be compared to throwing steel balls at a concrete wall. Upon impact, the balltears away fragments of the concrete, resulting in fragmentswhich retain the chemical and physical properties of concrete. If the process is continued, surfaces in the vicinity of the impactare covered with a layer of concrete dust. In sputtering, the“steel balls” are ionized atoms. The “wall” is a plate of the material to be sputtered, called a target.The sputtering processtakes place in an evacuated chamber. Argon is introduced, then

ionized in the chamber which contains the substrate and the target of the filmmaterial to be sputtered. The target is maintained at a negative potential relative tothe positively charged argon atom. The positive ion accelerates towards the negative charge, striking the target with sufficient force to remove material. Theargon atom does not become imbedded in the target. It slams into it like a steelball into the wall and tears off some of the target material. Since the chamber ismaintained at a vacuum, the liberated material settles on everything in the chamber, mainly the substrates.

MAGNETRON SPUTTERINGIn diode sputtering, not all of the electrons escaping the target contribute to theionized plasma glow area. The wasted electrons fly around the chamber causingradiation and other problems, for example, the heating of the target. A magnetronsputtering source addresses the electron problem by placing magnets behind, andsometimes, at the sides of the target. These magnets capture the escaping electrons and confine them to the immediate vicinity of the target. The ion current(density of ionized argon atoms hitting the target) is increased by an order of magnitude over conventional diode sputtering systems, resulting in fasterdeposition rates at lower pressure. The lower pressure in the chamber helps createa cleaner film. Target temperature is lower with magnetron sputtering enhancingthe deposition of high quality films.

"B" Field

"E" Field

GrowingFilm

Material RemovedBy Ion Bombardment

CapturedElectrons

MagneticFieldLines

Target(Cathode)Negative High

Voltage

Legend

IonsElectronsTarget AtomsArgon Atoms

11

Relative Sputtering Rates Table

Ag 2.16 C 0.05 Mo 0.53 Ta 0.43

Al 0.73 Cr 0.60 Ni 0.65 Ti 0.38

Al203 0.15 Cu 1.00 Si 0.39 Zr 0.65

Au 1.76 Mg 0.26 SiO2 0.45 W 0.39

• Maximum temperature 950°C• O2 compatible• UHV compatible

US Inc. 408-363-6909 • www.us-incorp.com

6280 San Ignacio Ave., Suite ESan Jose, CA 95119

PH: 408-363-6909 • FX: 408-363-6996e-mail: [email protected]

www.us-incorp.com

MANUFACTURING WITH PRIDE IN THE U.S.A. WORLD WIDE REPRESENTATION

planar magnetron sputtering sources - new york university · permitting the manufacture and...

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