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Silicon PhototransistorSDP8405
DESCRIPTION
FEATUREST-1 plastic package•
20¡ (nominal) acceptance angle•
Consistent optical properties•
Wide sensitivity ranges•
Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes
•
The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.
(.51)
.020SQ.LEADTYP
.050
(1.27)
DIA.(3.94)
.155
EMITTER
COLLECTOR
DIA..125 (3.18)
.115 (2.92)
MIN.(12.7).500
.03(.76).180(4.57)
.200(5.08)
MAX.(6.35).250
.05(1.27)
DIM_100.ds4
INFRA-22.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h116
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8405
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage 30 VEmitter-Collector Voltage 5 V
Power Dissipation 70 mW [À] Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡C
Soldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 117
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8405
SWITCHING TIME TEST CIRCUITcir_015.cdr
SWITCHING WAVEFORMcir_004.cdr
Responsivity vsAngular Displacement gra_047.ds4
Angular displacement - degrees
Rel
ativ
e re
spon
se
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Collector Current vsAmbient Temperature gra_039.ds4
Ambient temperature - °C
Nor
mal
ized
col
lect
or
curr
ent
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40 50 60 70 80
Fig. 2
Dark Current vsTemperature gra_301.cdr
Fig. 3 Non-Saturated Switching Time vsLoad Resistance gra_041.ds4
Load resistance - Ohms
Res
pons
e tim
e -
µs
1
10
100
10 100 1000 10000
Fig. 4
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h118
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8405
Spectral Responsivity gra_036.ds4
Wavelength - nm
Rel
ativ
e re
spon
se
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
400 600 800 1000 1200
Fig. 5 Coupling Characteristicswith SEP8505 gra_029.ds4
Lens-to-lens separation - inches
Ligh
t cu
rren
t - m
A
0.1
0.2
0.4
1
2
4
10
0.01 0.2 0.4 0.7 1 0.02 0.04 0.1
0.7
7
VCE = 5 VIF = 25 mATA = 25 °C
Fig. 6
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 119
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8406
DESCRIPTION
FEATURESSide-looking plastic package•
50¡ (nominal) acceptance angle•
Wide sensitivity ranges•
Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes
•
The SDP8406 is an NPN silicon phototransistor molded in a side-looking clear plastic package. The chip is positioned to accept radiation through a plastic lens from the side of the package.
DIM_017.ds4
INFRA-21.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h120
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8406
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage 30 VEmitter-Collector Voltage 5 V
Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡C
Soldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 121
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8406
SWITCHING TIME TEST CIRCUITcir_015.cdr
SWITCHING WAVEFORMcir_004.cdr
Responsivity vsAngular Displacement gra_054.ds4
Angular displacement - degrees
Rel
ativ
e re
spon
se
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Collector Current vsAmbient Temperature gra_039.ds4
Ambient temperature - °C
Nor
mal
ized
col
lect
or
curr
ent
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40 50 60 70 80
Fig. 2
Dark Current vsTemperature gra_301.cdr
Fig. 3 Non-Saturated Switching Time vsLoad Resistance gra_041.ds4
Load resistance - Ohms
Res
pons
e tim
e -
µs
1
10
100
10 100 1000 10000
Fig. 4
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h122
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8406
Spectral Responsivity gra_036.ds4
Wavelength - nm
Rel
ativ
e re
spon
se
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
400 600 800 1000 1200
Fig. 5 Coupling Characteristicswith SEP8506 gra_031.ds4
Lens-to-lens separation - inches
Ligh
t cur
rent
- m
A
0.1
0.2
0.4 0.6
1.0
2
4 6
10
0.01 0.02 0.05 0.1 0.2 0.5 1.0
IF = 20 mAVCE = 5V
TA = 25 °C
Fig. 6
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 123
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8407
DESCRIPTION
FEATURESEnd-looking plastic package•
135¡ (nominal) acceptance angle•
Low profile for design flexibility•
Mechanically and spectrally matched to SEP8507 infrared emitting diode
•
The SDP8407 is an NPN silicon phototransistor molded in an end-looking black plastic package. The chip is positioned to accept radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification.
DIM_018.ds4
INFRA-16.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.008(0.20)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h124
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8407
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage 30 VEmitter-Collector Voltage 5 V
Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85CStorage Temperature Range -40¡C to 85¡C
Soldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.66 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 125
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8407
SWITCHING TIME TEST CIRCUITcir_015.cdr
SWITCHING WAVEFORMcir_004.cdr
Responsivity vsAngular Displacement gra_055.ds4
Angular displacement - degrees
Rel
ativ
e re
spon
se
0.0
0.1 0.2
0.3 0.4
0.5
0.6 0.7
0.8 0.9
1.0
-160 -120 -80 -40 0 +40 +80 +120 +160
Fig. 1 Collector Current vsAmbient Temperature gra_039.ds4
Ambient temperature - °C
Nor
mal
ized
col
lect
or
curr
ent
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40 50 60 70 80
Fig. 2
Dark Current vsTemperature gra_301.cdr
Fig. 3 Spectral Responsivity gra_036.ds4
Wavelength - nm
Rel
ativ
e re
spon
se
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
400 600 800 1000 1200
Fig. 4
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h126
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
Silicon PhototransistorSDP8407
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 127
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Silicon PhototransistorSDP8436
DESCRIPTION
FEATURESSide-looking plastic package•
18¡ (nominal) acceptance angle•
Enhanced coupling distance•
Internal visible light rejection filter•
Low profile for design flexibility•
Wide sensitivity ranges•
Mechanically matched to SEP8736 infrared emitting diode
•
The SDP8436 is an NPN silicon phototransistor molded in a black plastic package which combines the mounting advantages of a side-looking package with the narrow acceptance angle and high optical gain of a T-1 package. The SDP8436 is designed for those applications which require longer coupling distances than standard side- looking devices can provide, such as touch screens. The device is also well suited to applications in which adjacent channel crosstalk could be a problem. The package is highly transmissive to the IR source energy while it provides effective shielding against visible ambient light.
DIM_019.ds4
INFRA-82.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h128
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
Silicon PhototransistorSDP8436
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage 30 VEmitter-Collector Voltage 5 V
Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡C
Soldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 129
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
Silicon PhototransistorSDP8436
SWITCHING TIME TEST CIRCUITcir_015.cdr
SWITCHING WAVEFORMcir_004.cdr
Responsivity vsAngular Displacement gra_013.ds4
Angular displacement - degrees
Rel
ativ
e re
spon
se
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Collector Current vsAmbient Temperature gra_039.ds4
Ambient temperature - °C
Nor
mal
ized
col
lect
or
curr
ent
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40 50 60 70 80
Fig. 2
Dark Current vsTemperature gra_301.cdr
Fig. 3 Non-Saturated Switching Time vsLoad Resistance gra_041.ds4
Load resistance - Ohms
Res
pons
e tim
e -
µs
1
10
100
10 100 1000 10000
Fig. 4
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h130
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
Silicon PhototransistorSDP8436
Spectral Responsivity gra_050.ds4
Wavelength - nm
Rel
ativ
e re
spon
se
0.0
0.10.2
0.30.4
0.50.6
0.7
0.8
0.9
1.0
600 700 800 900 1000 1100 1200
Fig. 5 Coupling Characteristicswith SEP8736 gra_034.ds4
Lens-to-lens separation - inches
Nor
mal
ized
ligh
t cu
rren
t 0.001
0.1
1.0
10
0.1 1.0 10
0.01
Fig. 6
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 131
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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Low Light Rejection PhototransistorSDP8475-201
DESCRIPTION
FEATUREST-1 plastic package•
Low light level immunity•
20¡ (nominal) acceptance angle•
Mechanically and spectrally matched to SEP8505 and SEP8705 infrared emitting diodes
•
(.51)
.020SQ.LEADTYP
.050
(1.27)
DIA.(3.94)
.155
EMITTER
COLLECTOR
DIA..125 (3.18)
.115 (2.92)
MIN.(12.7).500
.03(.76).180(4.57)
.200(5.08)
MAX.(6.35).250
.05(1.27)
DIM_100.ds4
INFRA-22.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
The SDP8475 is an NPN silicon phototransistor which internal base-emitter shunt resistance. Transfer molding of this device in a clear T-1 plastic package assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.
Distinguising Feature:
This device incorporates all of the desired features of a standard phototransistor with the advantage of low light immunity. The phototransistor switching occurs when the incident light increases above the threshold (knee point). When the light level exceeds the knee point of the device, it will function as a standard phototransistor. Chart A illustrates the light current output of the low light rejection phototransistor as compared to a standard phototransistor with similar sensitivity.
Typical Application Uses:
Ideally suited for use in applications which require ambient light rejection, or in transmissive applications where the interrupter media is semi- transparent to infrared energy. This device also provides high contrast ratio in reflective applications where unwanted background reflection is a possibility.
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h136
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
Low Light Rejection PhototransistorSDP8475-201
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage 30 VPower Dissipation 70 mW [À]
Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 137
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
Low Light Rejection PhototransistorSDP8475-201
SWITCHING TIME TEST CIRCUITcir_015.cdr
SWITCHING WAVEFORMcir_004.cdr
Responsivity vsAngular Displacement gra_047.ds4
Angular displacement - degrees
Rel
ativ
e re
spon
se
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Spectral Responsivity gra_036.ds4
Wavelength - nm
Rel
ativ
e re
spon
se
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
400 600 800 1000 1200
Fig. 2
Dark Current vsTemperature gra_310.ds4
D
ark
Cur
rent
- n
A
0.01
0.1
1
10
100
1000
-55 -35 -15 5 25 45 85 105 125
Free-air temprerature - °C
65
Vce = 15H = 0
Fig. 3 Collector Current vsAmbient Temperature gra_039.ds4
Ambient temperature - °C
Nor
mal
ized
col
lect
or
curr
ent
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40 50 60 70 80
Fig. 4
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h138
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
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SDP8475-201Low Light Rejection Phototransistor
Chart A. Low Light Rejection Phototransistor vs. Standard Phototransistor
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
0.000 0.125 0.250 0.375 0.500
Source intensity - mW/cm 2
Ligh
t cur
rent
- m
A
Min. LightCurrent Slope
Max. LightCurrent Slope
Min. LightCurrent SlopeStandard
Max. LightCurrent SlopeStandard
Designing with the Low Light RejectionPhototransistor:The Low Light Rejection detector is tested at differentincident light levels to determine adherence to thespecified knee point and light current slope. This methodassures proper functionality vs. standardphototransistors, and guarantees required light currentoutput.
The light current slope is the change in light currentoutput at two given source irradiances divided by thechange in the two source irradiances.
(Formula # 1)IL Slope = [IL 1 (@ H1 ) - IL2 (@ H2 )] / [H1 - H2]
Where:• • IL slope is the light current slope in mA/mW/cm
2
• IL is the light current output in mA• H is the source intensity in mW/cm2
Chart A shows the specified limits of light current slopefor the low light rejection phototransistor which begins itsslope at the typical knee point, 0.125mW/cm2. To make aclear distinction between this device and a standardphototransistor, light current slopes for high and lowsensitivity standard phototransistors are also shown.Note that for phototransistors of the same gain, theslopes of the two products are parallel.
The knee point, the source irradiance needed to increaseIL to 50uA, is a necessary parameter for circuit design.All variation in the knee point will be offset by theinternally guardbanded light current slope limits. Theappropriate formula for circuit design is the following:
(Formula # 2)IL = IL slopeMIN. * (HA - HKP)
Where:• IL is the light current output in mA• IL slopeMIN. is the minimum limit on the light current
slope (i.e. 4.0mA/mW/cm2)• HA is the source light incident on the detector for the
application• HKP is the specified level of source light incident on
the detector at the typical knee point (i.e. 0.125mW/cm2)
Example :To design a transmissive sensor with two of Honeywell’sstandard components, the SEP8505-002 and theSDP8475-201, it is first necessary to determine theirradiance level in mW/cm2 that will be incident on thedetector. The application conditions are the following:
139Honeywell reserves the right to makechanges in order to improve design andsupply the best products possible.
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
SDP8475-201Low Light Rejection Phototransistor
Supply voltage = 5VDistance between emitter and detector = 0.4 in.(10.16mm )IRED drive current = 20mA
The SEP8505-002 gives 1.0mW/cm2 min. to 4.0mW/cm2
max. under the above conditions. To obtain minimumlight current output, use the minimum irradiance limit.
Light current output = IL slopeMIN. * (HA - HKP)Light current output = 4.0 mA/mW/cm2 min. * (1.0mW/cm2 min. - 0.125 mW/cm2) = 3.5mA min.
Honeywell reserves the right to makechanges in order to improve design andsupply the best products possible.
140
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
Low Light Rejection PhototransistorSDP8476-201
DESCRIPTION
FEATURESSide-looking plastic package•
Low light level immunity•
50¡ (nominal) acceptance angle•
Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes
•
DIM_017.ds4
INFRA-21.TIF
OUTLINE DIMENSIONS in inches (mm)3 plc decimals ±0.005(0.12)Tolerance
2 plc decimals ±0.020(0.51)
The SDP8476 is an NPN silicon phototransistor which internal base-emitter shunt resistance. Transfer molding of this device in a clear T-1 plastic package assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.
Distinguising Feature:
This device incorporates all of the desired features of a standard phototransistor with the advantage of low light immunity. The phototransistor switching occurs when the incident light increases above the threshold (knee point). When the light level exceeds the knee point of the device, it will function as a standard phototransistor. Chart A illustrates the light current output of the low light rejection phototransistor as compared to a standard phototransistor with similar sensitivity.
Typical Application Uses:
Ideally suited for use in applications which require ambient light rejection, or in transmissive applications where the interrupter media is semi- transparent to infrared energy. This device also provides high contrast ratio in reflective applications where unwanted background reflection is a possibility.
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h142
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
Low Light Rejection PhototransistorSDP8476-201
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage 30 VPower Dissipation 100 mW [À]
Operating Temperature Range -40¡C to 85¡CStorage Temperature Range -40¡C to 85¡CSoldering Temperature (5 sec) 240¡C
Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h 143
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
Low Light Rejection PhototransistorSDP8476-201
SWITCHING TIME TEST CIRCUITcir_015.cdr
SWITCHING WAVEFORMcir_004.cdr
Responsivity vsAngular Displacement gra_054.ds4
Angular displacement - degrees
Rel
ativ
e re
spon
se
0.0
0.1
0.2
0.3 0.4
0.5
0.6
0.7
0.8 0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Spectral Responsivity gra_036.ds4
Wavelength - nm
Rel
ativ
e re
spon
se
0.1 0.2
0.3 0.4
0.5 0.6
0.7
0.8 0.9
1.0
400 600 800 1000 1200
Fig. 2
Dark Current vsTemperature gra_310.ds4
D
ark
Cur
rent
- n
A
0.01
0.1
1
10
100
1000
-55 -35 -15 5 25 45 85 105 125
Free-air temprerature - °C
65
Vce = 15H = 0
Fig. 3 Collector Current vsAmbient Temperature gra_039.ds4
Ambient temperature - °C
Nor
mal
ized
col
lect
or
curr
ent
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40 50 60 70 80
Fig. 4
All Performance Curves Show Typical Values
Honeywell reserves the right to make changes in order to improve design and supply the best products possible.
h144
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
SDP8476-201Low Light Rejection Phototransistor
Chart A. Low Light Rejection Phototransistor vs. Standard Phototransistor
0.00
1.00
2.00
3.00
4.00
5.00
6.00
0.00 0.25 0.50 0.75 1.00
Source intensity - mW/cm 2
Ligh
t cur
rent
- m
A
Min. LightCurrent Slope
Max. LightCurrent Slope
Min. LightCurrent SlopeStandardMax. LightCurrent SlopeStandard
Designing with the Low Light RejectionPhototransistor:The Low Light Rejection detector is tested at differentincident light levels to determine adherence to thespecified knee point and light current slope. This methodassures proper functionality vs. standardphototransistors, and guarantees required light currentoutput.
The light current slope is the change in light currentoutput at two given source irradiances divided by thechange in the two source irradiances.
(Formula # 1)IL Slope = [IL 1 (@ H1 ) - IL2 (@ H2 )] / [H1 - H2]
Where:• • IL slope is the light current slope in mA/mW/cm
2
• IL is the light current output in mA• H is the source intensity in mW/cm2
Chart A shows the specified limits of light current slopefor the low light rejection phototransistor which begins itsslope at the typical knee point, 0.25mW/cm2. To make aclear distinction between this device and a standardphototransistor, light current slopes for high and lowsensitivity standard phototransistors are also shown.Note that for phototransistors of the same gain, theslopes of the two products are parallel.
The knee point, the source irradiance needed to increaseIL to 50uA, is a necessary parameter for circuit design.All variation in the knee point will be offset by theinternally guardbanded light current slope limits. Theappropriate formula for circuit design is the following:
(Formula # 2)IL = IL slopeMIN. * (HA - HKP)
Where:• IL is the light current output in mA• IL slopeMIN. is the minimum limit on the light current
slope (i.e. 1.0mA/mW/cm2)• HA is the source light incident on the detector for the
application• HKP is the specified level of source light incident on
the detector at the typical knee point (i.e. 0.125mW/cm2)
To design a transmissive sensor with two of Honeywell’sstandard components, the SEP8506-003 and theSDP8476-201, it is first necessary to determine theirradiance level in mW/cm2 that will be incident on thedetector. The application conditions are the following:
Honeywell reserves the right to makechanges in order to improve design andsupply the best products possible.
145
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
-
SDP8476-201Low Light Rejection Phototransistor
Supply voltage = 5VDistance between emitter and detector = 0.535 in.(13.6mm)IRED drive current = 20mA
The SEP8506-003 gives 0.45mW/cm2 min. to0.90mW/cm2 max. under the above conditions. To obtainminimum light current output, use the minimum irradiancelimit.
Light current output = IL slopeMIN. * (HA - HKP)Light current output = 1.0 mA/mW/cm2 min. *(0.45mW/cm2 min. - 0.25 mW/cm2) = 0.2mA min.
146 Honeywell reserves the right to makechanges in order to improve design andsupply the best products possible.
Courtesy of Steven Engineering, Inc. ! 230 Ryan Way, South San Francisco, CA 94080-6370 ! Main Office: (650) 588-9200 ! Outside Local Area: (800) 258-9200 ! www.stevenengineering.com
PHOTOTRANSISTORSSilicon Phototransistor SDP8405Silicon Phototransistor SDP8406Silicon Phototransistor SDP8407Silicon Phototransistor SDP8436Low Light Rejection Phototransistor SDP8475201Low Light Rejection Phototransistor SDP8476201