pbss5330pa - nexperia · 1.0 1.5 0.5 2.0 2.5 ptot (w) 0.0 (1) (3) (2) (4) (1) ceramic pcb, al2o3,...

PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistor7 April 2015 Product data sheet

1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in anultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package withmedium power capability.

NPN complement: PBSS4330PA.

2. Features and benefits• Low collector-emitter saturation voltage VCEsat• High collector current capability IC and ICM• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors• Exposed heat sink for excellent thermal and electrical conductivity• Leadless small SMD plastic package with medium power capability

3. Applications• Loadswitch• Battery-driven devices• Power management• Charging circuits• Power switches (e.g. motors, fans)

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VCEO collector-emittervoltage

open base - - -30 V

IC collector current - - -3 A

ICM peak collector current single pulse; tp ≤ 1 ms - - -5 A

RCEsat collector-emittersaturation resistance

IC = -3 A; IB = -300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- 75 107 mΩ

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistor

PBSS5330PA All information provided in this document is subject to legal disclaimers.

Product data sheet 7 April 2015 2 / 16

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 B base

2 E emitter

3 C collector

Transparent top view

1 2

3

DFN2020-3 (SOT1061)

sym013

3

2

1

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PBSS5330PA DFN2020-3 DFN2020-3: plastic thermal enhanced ultra thin small outlinepackage; no leads; 3 terminals; body 2 x 2 x 0.65 mm

SOT1061

7. MarkingTable 4. Marking codesType number Marking code

PBSS5330PA AJ





8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - -30 V

VCEO collector-emitter voltage open base - -30 V

VEBO emitter-base voltage open collector - -6 V

IC collector current - -3 A

ICM peak collector current single pulse; tp ≤ 1 ms - -5 A

IB base current - -500 mA

[1] - 500 mW

[2] - 1 W

[3] - 1.25 W

Ptot total power dissipation Tamb ≤ 25 °C

[4] - 2.1 W

Tj junction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Tamb (°C)- 75 17512525 75- 25

006aab999

1.0

1.5

0.5

2.0

2.5Ptot(W)

0.0

(1)

(3)

(2)

(4)

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, mounting pad for collector 1 cm2

(4) FR4 PCB, standard footprint

Fig. 1. Power derating curves





9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - - 250 K/W

[2] - - 125 K/W

[3] - - 100 K/W

Rth(j-a) thermal resistancefrom junction toambient

in free air

[4] - - 60 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

006aab979

10

1

102

103

Zth(j-a)(K/W)

10- 110- 5 1010- 210- 4 10210- 1

tp (s)10- 3 1031

0

duty cycle = 1

0.010.02

0.050.1

0.20.33

0.50.75

FR4 PCB, standard footprint

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





006aab980

10

1

102

103

Zth(j-a)(K/W)

10- 110- 5 1010- 210- 4 10210- 1

tp (s)10- 3 1031

0

duty cycle = 1

0.010.02

0.050.1

0.20.33

0.50.75

FR4 PCB, mounting pad for collector 1 cm2

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values006aac000

10

1

102

103

Zth(j-a)(K/W)

10- 110- 5 1010- 210- 4 10210- 1

tp (s)10- 3 1031

0

duty cycle = 1

0.010.02

0.050.1

0.20.33

0.50.75

FR4 PCB, mounting pad for collector 6 cm2






006aab982

10- 5 1010- 210- 4 10210- 1tp (s)

10- 3 1031

10

1

102

Zth(j-a)(K/W)

10- 1

0

duty cycle = 1

0.010.02

0.05

0.1

0.20.33

0.50.75

Ceramic PCB, Al2O3, standard footprint






10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

VCB = -30 V; IE = 0 A; Tamb = 25 °C - - -100 nAICBO collector-base cut-offcurrent VCB = -30 V; IE = 0 A; Tj = 150 °C - - -50 µA

ICES collector-emitter cut-offcurrent

VCE = -24 V; VBE = 0 V; Tamb = 25 °C - - -100 nA

IEBO emitter-base cut-offcurrent

VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA

VCE = -2 V; IC = -0.5 A; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

200 320 -

VCE = -2 V; IC = -1 A; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

175 280 450


140 210 -

hFE DC current gain


100 160 -

IC = -0.5 A; IB = -50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- -45 -70 mV


- -90 -130 mV


- -170 -240 mV

VCEsat collector-emittersaturation voltage

- -230 -320 mV

RCEsat collector-emittersaturation resistance

IC = -3 A; IB = -300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 75 107 mΩ


- -0.89 -1.1 VVBEsat base-emitter saturationvoltage


- -0.97 -1.2 V

VBEon base-emitter turn-onvoltage


- -0.75 -1 V

td delay time - 11 - ns

tr rise time - 59 - ns

ton turn-on time - 70 - ns

ts storage time - 165 - ns

tf fall time - 35 - ns

toff turn-off time

VCC = -9 V; IC = -2 A; IBon = -0.1 A;IBoff = 0.1 A; Tamb = 25 °C

- 200 - ns





Symbol Parameter Conditions Min Typ Max Unit

fT transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz;Tamb = 25 °C

100 165 - MHz

Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C

- 38 45 pF

006aac036

0

800

200

400

600

- 10- 1 - 1 - 10 - 102 - 103 - 104

hFE

IC (mA)

(1)

(2)

(3)

VCE = −2 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 6. DC current gain as a function of collectorcurrent; typical values

006aac037

0 - 2.0

- 5

0

- 1

- 2

- 3

- 4

- 0.4 - 0.8 - 1.2 - 1.6

IC(A)

VCE (V)

IB (mA) = - 53

- 37.1

- 26.5

- 15.9

- 5.3

- 10.6

- 21.2

- 31.8

- 42.4

- 47.7

Tamb = 25 °C

Fig. 7. Collector current as a function of collector-emitter voltage; typical values





006aac038

0

- 1.2

- 0.4

- 0.8

- 10- 1 - 1 - 10 - 102 - 103 - 104

VBE(V)

IC (mA)

(1)

(2)

(3)

VCE = −2 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Fig. 8. Base-emitter voltage as a function of collectorcurrent; typical values

006aac039

- 0.2

- 1.4

- 0.6

- 1.0

- 10- 1 - 1 - 10 - 102 - 103 - 104

VBEsat(V)

IC (mA)

(1)

(2)

(3)

IC/IB = 20(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Fig. 9. Base-emitter saturation voltage as a function ofcollector current; typical values

006aac040- 1

- 10- 1

- 10- 2

- 10- 3

- 10- 1 - 1 - 10 - 102 - 104- 103

VCEsat(V)

IC (mA)

(1)

(2)

(3)

IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 10. Collector-emitter saturation voltage as afunction of collector current; typical values

006aac041- 1

- 1 - 10 - 102 - 104- 103

IC (mA)

- 10- 2

- 10- 3- 10- 1

VCEsat(V)

- 10- 1

(1)

(2)

(3)

Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10

Fig. 11. Collector-emitter saturation voltage as afunction of collector current; typical values





006aac042102

10

1

10- 1

10- 2

- 10- 1 - 1 - 10 - 102 - 103 - 104

RCEsat(Ω)

IC (mA)

(1)

(2)(3)

IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 12. Collector-emitter saturation resistance as afunction of collector current; typical values

006aac043

102

10

1

10- 1

10- 2- 10- 1 - 1 - 10 - 102 - 103 - 104

RCEsat(Ω)

IC (mA)

103

(1)

(2)

(3)

Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 10

Fig. 13. Collector-emitter saturation resistance as afunction of collector current; typical values





11. Test information

006aaa266

- IBon (100 %)

- IB

input pulse(idealized waveform)

- IBoff

90 %

10 %

- IC (100 %)

- IC

tdton

90 %

10 %

tr

output pulse(idealized waveform)

t f

t

tstoff

Fig. 14. BISS transistor switching time definition

RC

R2

R1

DUT

mgd624

Vo

RB(probe)450 Ω

(probe)450 Ω

oscilloscope oscilloscope

VBB

VI

VCC

Fig. 15. Test circuit for switching times





12. Package outline

09-11-12Dimensions in mm

0.65max

2.11.9

1.61.4

0.350.25

0.450.35

2.11.91.1

0.90.30.2

1.050.95

1.3

2

3

1

Fig. 16. Package outline DFN2020-3 (SOT1061)

13. Soldering

occupied area

solder paste = solder lands Dimensions in mm

sot1061_frsolder resist

0.4

2.1

1.3

0.25

0.25 0.25

1.1 1.2

0.550.62.3

0.5 (2×)

0.5 (2×) 0.6 (2×)

0.4 (2×)

0.5

1.6

1.7

1.05

Fig. 17. Reflow soldering footprint for DFN2020-3 (SOT1061)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PBSS5330PA v.2 20150407 Product data sheet - PBSS5330PA v.1

Modifications: • Condition VCE changed for parameter ICES in Table 7, Characteristics

PBSS5330PA v.1 20100419 Product data sheet - -





15. Legal information

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Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

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Product[short] datasheet

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[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

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16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................711 Test information ................................................... 1112 Package outline ................................................... 1213 Soldering .............................................................. 1214 Revision history ...................................................1315 Legal information .................................................1415.1 Data sheet status ............................................... 1415.2 Definitions ...........................................................1415.3 Disclaimers .........................................................1415.4 Trademarks ........................................................ 15

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 07 April 2015